CN101681871B - 用于涂覆以最密堆积设置在基座上的多个基板的装置 - Google Patents

用于涂覆以最密堆积设置在基座上的多个基板的装置 Download PDF

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CN101681871B
CN101681871B CN2008800170359A CN200880017035A CN101681871B CN 101681871 B CN101681871 B CN 101681871B CN 2008800170359 A CN2008800170359 A CN 2008800170359A CN 200880017035 A CN200880017035 A CN 200880017035A CN 101681871 B CN101681871 B CN 101681871B
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亚当·博伊德
维克托·塞韦尔
简·马尔德
奥利维尔·费龙
约翰尼斯·卡普勒
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Abstract

本发明涉及用于涂覆多个基板(3)的装置，基板(3)规则地设置在配属于一处理室的基座(1)的承载表面(2)上，其中承载表面(2)形成用于每个基板(3)的边缘安装的邻接侧面(5)。为了减少自由基座表面到最小，提出了侧壁的邻接侧面(5)由基底(4)形成，基底(4)从承载表面(2)突出，并且以一距离彼此间隔。所述基底设置在蜂巢结构的拐角点(10)上，并且其轮廓基本上对应于等边三角形，但具有向内弯曲的边(5)。

Description

用于涂覆以最密堆积设置在基座上的多个基板的装置
技术领域
本发明涉及对以规则方式设置在配属于一处理室的基座的支撑表面上的多个基板进行涂覆的装置，该支撑表面提供用于每个基板的边缘接合的邻接侧面(abutment flanks)。
背景技术
DE US 58 14196描述了这样的涂覆装置，其中基板位于凹槽中，凹槽的边缘与基板的外围形状匹配。凹槽的底面限定了对基板的支撑表面。基板的中心位于等边三角形的拐角点。
由US 2003/0109139A1可知这样的抛光装置，其中以行星式布置将每三个基板设置在基板载体上。
DE 10 2004 009 130 A1描述了这样的涂覆多个基板的装置，该基板以规则方式设置在配属于处理室的基座的支撑表面上，该支撑表面提供用于每个基板的边缘接合的邻接侧面。在此情况下，基板设置在共六个转盘上。转盘设置为关于基座的中心呈六边形布置。
DE 100 43 600 A1示出了类似的布置。
在用于涂覆多个基板的已知装置中，基板关于基座的中心呈圆形布置。在第一行中，例如，四个基板关于基座的中心均匀地分布。因此，基板位于基座的上表面的各凹槽中，各凹槽的中心围绕该中心的圆线行进。在围绕中心的第二圆中，十个基板也类似地每个位于各凹槽中。在关于中心的第三圆中，十六个基板以对应的方式位于各凹槽中，各凹槽的中心距基座的中心具有相同的间隔。
基板在基座上的这种布置带来一定的益处。处理室设置在基座的支撑表面之上，处理气体通过气体进口构件从上面导入处理室。这些处理气体或者以气相反应，或者在基板要涂覆的上表面上反应，处理气体的元素在层形成过程中沉积在基板上。正因为这样，基座通常从下面加热。
基本上不可避免的是，寄生生长(parasitical growth)发生在基座在各凹槽之间的间隔中。寄生生长不仅导致不希望的气相损耗，而且具有对沉积层均匀性的负面影响。
发明内容
因此，本发明的目标是有利地改善已知装置的可用性。
权利要求中限定的本发明满足了这样的目标，每项权利要求都表示解决问题的独立方案，并且可与任何其他权利要求相结合。
本发明下面的解决方案提供基板之间的自由基座上表面的最小化。为此，首先提出了与基板边缘接合的邻接侧面由从支撑表面突伸出的竖直部分的侧壁定义。因此，有利的是竖直件设置在蜂巢状图案的拐角点。竖直件可以彼此间隔以使得相邻基板的边缘部分接触或几乎接触。在优选构造中，竖直件的外围边缘遵循(follow)基板的外围边缘。因为通常基板形成为基本上圆形的形状，所以竖直件的侧壁具有向内弯曲的边。由此竖直件的拐角点位于等边三角形的拐角点处，从而竖直件的平面图基本上对应于等边三角形的平面图，但具有向内弯曲的边。竖直件优选在面对处理室的基板支架的宽阔侧面中的凹陷底部升高。进一步优选的是竖直件由基座材料之外的材料制作。基座通常由石墨或金属制作。然而，也可以由石英制作。竖直件在此情况下可以形成为插入件，插入支撑表面中的插入开口中。尤其优选的是，竖直件由与组成设置在竖直件之间的基板的材料相同的材料组成，如蓝宝石或半导体材料。于是，竖直件上表面的物理和化学特性对应于基板上表面的化学和物理特性。竖直件的高度基本上对应于基板材料的厚度。因为基板的外围边缘几乎与竖直件的弯曲侧壁接触接合，所以使得在加载基板时，只有非常小部分的基座的上表面不具有基板的物理和化学特性。作为该构造的结果，可以增加层的均匀性。在本发明的开发中，如本领域的现有技术，基板也位于与基板分别相关的各凹槽中。然而，这里恰当的是，各凹槽的中心位于由等边三角形组成的格子的拐角点。格子常数，即拐角点彼此的间隔，仅略微大于基板的直径。另外，这里各凹槽限定了用于基板边缘的邻接表面，该邻接表面沿弧线行进。在每个三角形的拐角点之间的中心，存在基本上三角形的竖直部分，竖直部分具有向内弯曲的侧壁。然而，这些侧壁在竖直件的拐角点处不交叉，而结合成相邻的竖直件，形成材料桥。在该解决方案中，基座的没有被基板覆盖的自由上表面也被最小化。
附图说明
下面，参考附图说明本发明的示范性实施例，在附图中：
图1示出了第一示范性实施例的基座的支撑表面的平面图，出于示例的目的，仅部分加载有基板3；
图2是根据权利要求1的图示，三角形竖直部分4的中心点由辅助线7彼此连接，以便图示蜂巢状图案；
图3示出了根据图1中的III的放大图；
图4示出了图3中IV-IV线的截面图；
图5示出了第二示范性实施例的根据图4的图示；
图6示出了第三示范性实施例的根据图1的图示，以及
图7示出了用于说明本发明的示意性图示，有关于根据本发明的装置细节。
具体实施方式
图7描述了用于涂覆设置在基座1上的多个基板3的装置的反应器框架的内部情况。基座1基本上由具有位于水平平面中的圆形上表面的石墨主体组成，该上表面形成多个基板的支撑表面2。该基座1具有上至40cm的直径，可以绕旋转轴A旋转。
在基座1的上方有处理室14，该处理室14向上由气体进口构件15的下侧定界。开口可以以淋浴喷头(shower head)的方式分布在气体进口构件15的整个面朝下的气体出口面上，一种或多种处理气体通过这些开口进入处理室14，以使得以气相自发地或由设置在基座1下面的加热器热激活地在基板的上表面上反应。处理气体包含第四主族的元素或者第三和第五主族的元素或者第二和第六主族的元素。氯化物、氢化物或金属有机化合物可以通过气体进口构件引入处理室14中，这也可以以其他的方式构造。特别是，上述的第二至第六主族元素以结晶层的形式凝聚在以规则方式设置在基座1上的基板3的上表面上。为了优化在基板3上的层成长，根据本发明，基板以能最密堆积布置设在基座上。选择基板的六边形布置(hexagonal arrangement)。特别是，由图2和6可了解的是，各基板3的中心10处于一个格子的拐角点上，其中每个格子单元由一个等边三角形组成。在图6中，这种格子借助辅助线11表示，这些辅助线11将各个分别可置入一个基板3的凹槽12的中心10彼此连接。在图2中，该结构示出为蜂巢图案。作为基板3在基座1上的六边形布置的结果，最小化了基座1没有被基板覆盖的自由表面。
对于图解于图1至4中的第一示范性实施例，基座1的上侧，即处于水平平面并面朝上的表面，具有一个大的凹槽，由支撑表面2形成。因此，支撑表面2的外边缘沿着设置在凹槽中的基板的边缘的部分行进，这些边缘以弧形行进以形成凹槽边缘16。
在支撑表面2内具有竖直部分4，竖直部分4从形成支撑表面2的凹槽底部突伸出。由图2中标记的辅助线7清楚可见，竖直件的中心点6位于六边形格子的格点，尤其是蜂巢形状。在这些格子单元的每一个中都具有基板3。竖直件4的拐角点位于等边三角形的顶点，竖直件4的侧壁5沿向内弯曲的线行进。竖直件4的侧壁5形成基板3的边缘8的邻接侧面(abutmentflank)5，各基板3都设置在六个竖直件之间。
在两个相邻的竖直件3彼此面对的拐角之间，具有自由空间，基板3的外围边缘的部分8可延伸到其中，以使得两个相邻基板的外围边缘8可以接触或者彼此相距仅百分之几毫米。作为该构造的结果，由竖直件4的角板形状(gusset-shaped)的上表面形成基座1上表面上的自由表面。竖直件4的彼此间的间距近似对应于竖直件4宽度方向上的延伸量。在图1和2中，基板3居中设置在六个竖直件之间的容放区域中。在偏心位置上，两个相邻竖直件4拐角的拐角点之间的连接线的边缘8的部分可以交叉。
由图4可以了解，在第一示范性实施例的情况下，竖直件4连接到基座1，作为基座的组成部分(integral part)。基座可以是石墨、涂覆的石墨、金属或石英。因此，竖直件4为所述其上放置基板3的支撑表面2上的凸起。竖直件4的高度基本上对应于基板3的材料厚度。
图5示出了第二示范性实施例，其中竖直件4具有如图1至3所示平面图中的形状。然而，在该示范性实施例中，竖直件4由插入件定义，该插入件可以由基座1之外的材料形成。形成竖直件4的插入件插入支撑表面2中的插入开口9中。这里也一样，竖直件4突伸到支撑表面2之上基板3的材料厚度。在该示范性实施例的情况下，竖直件4可以由与组成基板3的材料相同的材料组成。在该示范性实施例中，基座在凹槽的边缘16内的上表面几乎全部由竖直件的上表面和基板的上表面形成，它们具有相同的化学和物理化学特性。这样，能够增加沉积层的均匀性。
在图6所示的第三示范性实施例中，基板3设置在各凹槽12中。这里的各凹槽12的中心10如上所述设置在格子的拐角点，其格子单元具有等边三角形的形状。三角形的边长仅略大于基板3的直径或各凹槽12的直径。这里也一样，三个彼此相邻的各凹槽分别相邻于竖直件4。然而，在该示范性实施例中，两个相邻的竖直部分4彼此连接，形成材料桥(material bridge)13。材料桥13形成收缩。收缩的最小水平宽度，即材料桥13的最小宽度基本上对应于基板3的材料厚度或者连续围绕基板3的邻接侧面4高度。
所揭示的所有特征(其自身)都与本发明相关。在此相关/所附优先权文件(优先权申请的副本)的公开内容也完全包括在本申请的公开之中，同时也为了将这些文件的特征结合于本申请的权利要求之中的目的。

Claims (7)

1.一种用于涂覆多个基板(3)的装置，所述基板(3)以规则的方式布置在配属于一处理室(14)的基座(1)的支撑表面(2)上，所述支撑表面(2)形成用于每个基板(3)的边缘接合的邻接侧面(5)，其特征在于，所述邻接侧面(5)由多个竖直件(4)的侧壁(5)定义，所述多个竖直件(4)从所述支撑表面(3)突伸出，并且彼此隔开一间距，所述各竖直件位于蜂巢状图案的拐角点(10)，并且在平面图中具有基本上对应于等边三角形的形状，但具有向内弯曲的边(5)，其中，所述竖直件(4)彼此隔开以使得相邻基板(3)的边缘部分(8)接触或彼此相距仅百分之几毫米。
2.根据权利要求1所述的装置，其特征在于，所述竖直件(4)是插入件，所述插入件插入所述支撑表面(2)中的插入开口(9)中。
3.根据权利要求2所述的装置，其特征在于，所述插入件由与组成所述基板(3)的材料相同的材料组成。
4.根据权利要求3所述的装置，其特征在于，所述基板由蓝宝石或者半导体材料组成。
5.根据权利要求1所述的装置，其特征在于，所述基座(1)由石墨或金属或石英组成。
6.根据权利要求1所述的装置，其特征在于，所述邻接侧面(5)的高度基本上对应于基板(3)的材料厚度。
7.根据权利要求1所述的装置，其特征在于，所述处理室(14)设置在水平基座(1)之上，所述处理室向上由气体进口构件(15)的下侧定界，所述气体进口构件具有面朝下的开口，所述开口以淋浴喷头的方式分布在所述气体进口构件(15)的整个面朝下的气体出口表面，并且一种或多种处理气体从所述开口进入所述处理室(14)，以便以气相自发地或由位于所述基座(1)下面的加热器热激活地在所述基板的上表面上反应。
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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8216379B2 (en) * 2009-04-23 2012-07-10 Applied Materials, Inc. Non-circular substrate holders
WO2012018116A1 (ja) 2010-08-06 2012-02-09 日亜化学工業株式会社 サファイア基板と半導体発光素子
KR101455736B1 (ko) * 2010-12-29 2014-11-04 세메스 주식회사 기판지지부재 및 이를 갖는 기판처리장치
CN102347233B (zh) * 2011-08-14 2013-11-06 上海合晶硅材料有限公司 提高硅片背封时硅片厚度均匀性的方法及托盘
CN103258763A (zh) * 2012-02-15 2013-08-21 沈阳拓荆科技有限公司 一种多尺寸晶圆共用的晶圆载台结构
DE102012101717A1 (de) 2012-03-01 2013-09-05 Aixtron Se Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
JP5999807B2 (ja) * 2012-03-07 2016-09-28 東洋炭素株式会社 サセプタ
CN103898478A (zh) * 2012-12-26 2014-07-02 光达光电设备科技（嘉兴）有限公司 一种化学气相沉积设备及其托盘
CN103173744A (zh) * 2013-04-12 2013-06-26 光垒光电科技（上海）有限公司 一种托盘和包含该托盘的反应腔
DE102014100024A1 (de) * 2014-01-02 2015-07-02 Aixtron Se Vorrichtung zur Anordnung von Substraten, insbesondere Suszeptor eines CVD-Reaktors
DE102014103505A1 (de) 2014-03-14 2015-09-17 Aixtron Se Beschichtetes Bauteil eines CVD-Reaktors und Verfahren zu dessen Herstellung
DE102014117388A1 (de) 2014-11-27 2016-06-02 Aixtron Se Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors
DE102015118215A1 (de) * 2014-11-28 2016-06-02 Aixtron Se Substrathaltevorrichtung mit vereinzelten Tragvorsprüngen zur Auflage des Substrates
USD793972S1 (en) 2015-03-27 2017-08-08 Veeco Instruments Inc. Wafer carrier with a 31-pocket configuration
USD793971S1 (en) 2015-03-27 2017-08-08 Veeco Instruments Inc. Wafer carrier with a 14-pocket configuration
USD778247S1 (en) 2015-04-16 2017-02-07 Veeco Instruments Inc. Wafer carrier with a multi-pocket configuration
DE102016115614A1 (de) * 2016-08-23 2018-03-01 Aixtron Se Suszeptor für einen CVD-Reaktor
USD860146S1 (en) * 2017-11-30 2019-09-17 Veeco Instruments Inc. Wafer carrier with a 33-pocket configuration
DE102018107135A1 (de) 2018-03-26 2019-09-26 Aixtron Se Mit einer individuellen Kennung versehenes Bauteil einer CVD-Vorrichtung sowie Verfahren zur Übermittlung von Informationen
USD866491S1 (en) 2018-03-26 2019-11-12 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en) 2018-03-26 2019-09-03 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en) 2018-03-26 2019-09-17 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD863239S1 (en) 2018-03-26 2019-10-15 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD854506S1 (en) 2018-03-26 2019-07-23 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
KR20210066851A (ko) * 2018-10-04 2021-06-07 토요 탄소 가부시키가이샤 서셉터
US12125728B2 (en) * 2019-01-21 2024-10-22 Applied Materials, Inc. Substrate carrier

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045057A1 (de) * 1980-07-28 1982-02-03 Siemens Aktiengesellschaft Vorrichtung zur Halterung von kreisförmigen Substratscheiben
US5814196A (en) * 1991-04-04 1998-09-29 Conner Peripherals, Inc. Apparatus and method for high throughput sputtering
US6843892B1 (en) * 2002-02-19 2005-01-18 Seagate Technology Llc Apparatus and method for selectively and controllably electrically biasing a plurality of substrates on a pallet
CN1723295A (zh) * 2001-10-05 2006-01-18 英特尔公司 制造掺碳氧化物膜的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3637434A (en) * 1968-11-07 1972-01-25 Nippon Electric Co Vapor deposition apparatus
DE2736536C2 (de) * 1976-08-13 1986-01-30 AO Inc., Southbridge, Mass. Substrathalter zur Verwendung bei der Bedampfung optischer Kunststofflinsen
IL56224A (en) * 1978-01-16 1982-08-31 Veeco Instr Inc Substrate clamp for use in semiconductor fabrication
US4512841A (en) * 1984-04-02 1985-04-23 International Business Machines Corporation RF Coupling techniques
US4872922A (en) * 1988-03-11 1989-10-10 Spire Corporation Method and apparatus for the ion implantation of spherical surfaces
JPH04221820A (ja) * 1990-12-21 1992-08-12 Fujitsu Ltd 有機金属気相成長方法
JPH04364719A (ja) * 1991-06-12 1992-12-17 Hitachi Ltd 半導体成膜装置
JPH0878347A (ja) * 1994-09-06 1996-03-22 Komatsu Electron Metals Co Ltd エピタキシャル成長装置のサセプタ
JPH0936049A (ja) * 1995-07-21 1997-02-07 Mitsubishi Electric Corp 気相成長装置およびこれによって製造された化合物半導体装置
US6123804A (en) * 1999-02-22 2000-09-26 Applied Materials, Inc. Sectional clamp ring
US6436796B1 (en) * 2000-01-31 2002-08-20 Mattson Technology, Inc. Systems and methods for epitaxial processing of a semiconductor substrate
DE10043600B4 (de) 2000-09-01 2013-12-05 Aixtron Se Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten
DE10156441A1 (de) * 2001-05-18 2002-11-21 Mattson Thermal Products Gmbh Vorrichtung zur Aufnahme von scheibenförmigen Objekten und Vorrichtung zur Handhabung von Objekten
DE10159833C1 (de) * 2001-12-06 2003-06-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
DE102004009130A1 (de) 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
JP2006173560A (ja) * 2004-11-16 2006-06-29 Sumitomo Electric Ind Ltd ウエハガイド、有機金属気相成長装置および窒化物系半導体を堆積する方法
DE102004058521A1 (de) * 2004-12-04 2006-06-14 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von dicken Gallium-Nitrit-Schichten auf einem Saphirsubstrat und zugehörigen Substrathalter
JP2006303152A (ja) * 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd エピタキシャル成膜装置およびエピタキシャル成膜方法
DE102006018514A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045057A1 (de) * 1980-07-28 1982-02-03 Siemens Aktiengesellschaft Vorrichtung zur Halterung von kreisförmigen Substratscheiben
US5814196A (en) * 1991-04-04 1998-09-29 Conner Peripherals, Inc. Apparatus and method for high throughput sputtering
CN1723295A (zh) * 2001-10-05 2006-01-18 英特尔公司 制造掺碳氧化物膜的方法
US6843892B1 (en) * 2002-02-19 2005-01-18 Seagate Technology Llc Apparatus and method for selectively and controllably electrically biasing a plurality of substrates on a pallet

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