Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
  • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
  • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
  • H10D30/6739—Conductor-insulator-semiconductor electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
  • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/40—Crystalline structures
  • H10D62/405—Orientations of crystalline planes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
  • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
  • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
  • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
  • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material

Landscapes

• Thin Film Transistor (AREA)
• Liquid Crystal (AREA)
• Electroluminescent Light Sources (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Physical Vapour Deposition (AREA)
• Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
• Formation Of Insulating Films (AREA)
• Dram (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

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Family Applications After (1)

Country Status (5)

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Citations (4)

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• 2013
  • 2013-01-16 WO PCT/JP2013/051229 patent/WO2013111756A1/en not_active Ceased
  • 2013-01-16 KR KR1020197017870A patent/KR102083380B1/ko active Active
  • 2013-01-16 KR KR1020217027057A patent/KR102412138B1/ko active Active
  • 2013-01-16 KR KR1020227020796A patent/KR20220088814A/ko not_active Ceased
  • 2013-01-16 KR KR1020147017937A patent/KR102034911B1/ko active Active
  • 2013-01-16 KR KR1020217006525A patent/KR102295888B1/ko active Active
  • 2013-01-16 KR KR1020207005445A patent/KR102225396B1/ko active Active
  • 2013-01-22 US US13/746,751 patent/US9293589B2/en active Active
  • 2013-01-23 TW TW106107047A patent/TWI661560B/zh active
  • 2013-01-23 TW TW102102480A patent/TWI587514B/zh active
  • 2013-01-23 JP JP2013009708A patent/JP2013175713A/ja not_active Withdrawn
• 2015
  • 2015-04-24 JP JP2015089554A patent/JP5839636B2/ja active Active
  • 2015-11-30 JP JP2015232989A patent/JP6188773B2/ja active Active
• 2016
  • 2016-03-21 US US15/075,775 patent/US10243081B2/en active Active
• 2018
  • 2018-03-23 JP JP2018055500A patent/JP2018117148A/ja not_active Withdrawn
• 2019
  • 2019-09-02 JP JP2019159379A patent/JP6871328B2/ja active Active
• 2021
  • 2021-04-15 JP JP2021068780A patent/JP2021141330A/ja not_active Withdrawn
• 2022
  • 2022-12-19 JP JP2022201981A patent/JP2023029382A/ja not_active Withdrawn
• 2024
  • 2024-07-11 JP JP2024111777A patent/JP7725668B2/ja active Active
• 2025
  • 2025-08-06 JP JP2025131236A patent/JP2025159025A/ja active Pending

Patent Citations (4)

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