TWI609429B - 用以製造半導體裝置的方法 - Google Patents
用以製造半導體裝置的方法 Download PDFInfo
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- TWI609429B TWI609429B TW099121694A TW99121694A TWI609429B TW I609429 B TWI609429 B TW I609429B TW 099121694 A TW099121694 A TW 099121694A TW 99121694 A TW99121694 A TW 99121694A TW I609429 B TWI609429 B TW I609429B
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- oxide semiconductor
- semiconductor layer
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Formation Of Insulating Films (AREA)
- Shift Register Type Memory (AREA)
- Dram (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Physical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Materials Engineering (AREA)
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| JP2009164134 | 2009-07-10 |
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| SG (2) | SG177332A1 (enExample) |
| TW (2) | TWI609429B (enExample) |
| WO (1) | WO2011004724A1 (enExample) |
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| TWI723652B (zh) * | 2019-10-12 | 2021-04-01 | 大陸商長江存儲科技有限責任公司 | 半導體裝置及其製作方法 |
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| KR20210131462A (ko) | 2009-07-10 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 제작 방법 |
| KR102362616B1 (ko) | 2009-07-31 | 2022-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| TWI559501B (zh) | 2009-08-07 | 2016-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| WO2011027656A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| WO2011043215A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device and driving method thereof |
| CN116343705B (zh) * | 2009-10-16 | 2025-08-26 | 株式会社半导体能源研究所 | 显示设备 |
| JP5258824B2 (ja) * | 2010-03-16 | 2013-08-07 | 株式会社東芝 | プロセスシミュレーションをコンピュータに実行させるプログラム |
| CN102157565A (zh) * | 2011-01-18 | 2011-08-17 | 北京大学深圳研究生院 | 一种薄膜晶体管的制作方法 |
| JP5766467B2 (ja) | 2011-03-02 | 2015-08-19 | 株式会社東芝 | 薄膜トランジスタ及びその製造方法、表示装置 |
| JP5657433B2 (ja) * | 2011-03-11 | 2015-01-21 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法、薄膜トランジスタ、表示装置、センサ及びｘ線デジタル撮影装置 |
| US9960278B2 (en) * | 2011-04-06 | 2018-05-01 | Yuhei Sato | Manufacturing method of semiconductor device |
| JP5418563B2 (ja) * | 2011-09-29 | 2014-02-19 | ウシオ電機株式会社 | 酸化物半導体を用いた薄膜トランジスタの製造方法および製造装置 |
| US8716708B2 (en) | 2011-09-29 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2013093565A (ja) * | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2013087962A (ja) * | 2011-10-13 | 2013-05-13 | Panasonic Corp | 加熱調理装置 |
| US20140252355A1 (en) * | 2011-10-21 | 2014-09-11 | Sharp Kabushiki Kaisha | Semiconductor device and method for producing same |
| US8901556B2 (en) * | 2012-04-06 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
| KR20130136063A (ko) * | 2012-06-04 | 2013-12-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법 |
| TWI479664B (zh) * | 2012-12-28 | 2015-04-01 | Ye Xin Technology Consulting Co Ltd | 薄膜電晶體及其製作方法與液晶顯示面板 |
| US9312392B2 (en) | 2013-05-16 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN104460143B (zh) * | 2013-09-17 | 2017-12-15 | 瀚宇彩晶股份有限公司 | 像素结构及其制造方法 |
| TWI671657B (zh) * | 2013-09-18 | 2019-09-11 | Semiconductor Energy Laboratory Co., Ltd. | 顯示裝置、顯示裝置的驅動方法、程式以及儲存介質 |
| DE112014004839T5 (de) * | 2013-10-22 | 2016-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
| WO2015132697A1 (en) * | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2018146569A1 (ja) * | 2017-02-07 | 2018-08-16 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| KR102343573B1 (ko) * | 2017-05-26 | 2021-12-28 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
| JP2020021814A (ja) * | 2018-07-31 | 2020-02-06 | 株式会社リコー | 電界効果型トランジスタの製造方法、並びに表示素子、画像表示装置、及びシステム |
| US11581334B2 (en) * | 2021-02-05 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cocktail layer over gate dielectric layer of FET FeRAM |
| US20230084611A1 (en) * | 2021-09-10 | 2023-03-16 | Intel Corporation | Two transistor capacitorless memory cell with stacked thin-film transistors |
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