TWI397135B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI397135B TWI397135B TW094105538A TW94105538A TWI397135B TW I397135 B TWI397135 B TW I397135B TW 094105538 A TW094105538 A TW 094105538A TW 94105538 A TW94105538 A TW 94105538A TW I397135 B TWI397135 B TW I397135B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- bonding pad
- semiconductor device
- wiring
- wiring layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 197
- 229910052751 metal Inorganic materials 0.000 claims abstract description 296
- 239000002184 metal Substances 0.000 claims abstract description 296
- 150000002739 metals Chemical class 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 249
- 239000000523 sample Substances 0.000 description 63
- 239000011229 interlayer Substances 0.000 description 52
- 230000035515 penetration Effects 0.000 description 24
- 238000001514 detection method Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 238000002474 experimental method Methods 0.000 description 14
- 238000004088 simulation Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000002161 passivation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000010354 integration Effects 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910018594 Si-Cu Inorganic materials 0.000 description 2
- 229910008465 Si—Cu Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
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Applications Claiming Priority (2)
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JP2004051486A JP2005243907A (ja) | 2004-02-26 | 2004-02-26 | 半導体装置 |
PCT/JP2005/002801 WO2005083767A1 (ja) | 2004-02-26 | 2005-02-22 | 半導体装置 |
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TW200534415A TW200534415A (en) | 2005-10-16 |
TWI397135B true TWI397135B (zh) | 2013-05-21 |
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TW094105538A TWI397135B (zh) | 2004-02-26 | 2005-02-24 | 半導體裝置 |
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US (2) | US7701063B2 (ko) |
JP (2) | JP2005243907A (ko) |
KR (1) | KR101127893B1 (ko) |
CN (3) | CN1947231B (ko) |
TW (1) | TWI397135B (ko) |
WO (1) | WO2005083767A1 (ko) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005243907A (ja) * | 2004-02-26 | 2005-09-08 | Renesas Technology Corp | 半導体装置 |
JP2007042817A (ja) * | 2005-08-02 | 2007-02-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
KR100849640B1 (ko) | 2005-09-16 | 2008-08-01 | 가부시키가이샤 리코 | 반도체 장치 |
JP4630164B2 (ja) | 2005-09-20 | 2011-02-09 | ルネサスエレクトロニクス株式会社 | 半導体装置とその設計方法 |
JP2007123303A (ja) * | 2005-10-25 | 2007-05-17 | Nec Electronics Corp | 半導体装置 |
US7456479B2 (en) * | 2005-12-15 | 2008-11-25 | United Microelectronics Corp. | Method for fabricating a probing pad of an integrated circuit chip |
JP4675231B2 (ja) * | 2005-12-28 | 2011-04-20 | パナソニック株式会社 | 半導体集積回路装置 |
JP5111878B2 (ja) | 2007-01-31 | 2013-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5034740B2 (ja) * | 2007-07-23 | 2012-09-26 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP5027605B2 (ja) | 2007-09-25 | 2012-09-19 | パナソニック株式会社 | 半導体装置 |
JP2009141064A (ja) | 2007-12-05 | 2009-06-25 | Renesas Technology Corp | 半導体装置 |
US20100148218A1 (en) | 2008-12-10 | 2010-06-17 | Panasonic Corporation | Semiconductor integrated circuit device and method for designing the same |
JP2010147282A (ja) * | 2008-12-19 | 2010-07-01 | Renesas Technology Corp | 半導体集積回路装置 |
JP5452064B2 (ja) | 2009-04-16 | 2014-03-26 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US8310056B2 (en) * | 2009-05-29 | 2012-11-13 | Renesas Electronics Corporation | Semiconductor device |
CN102034823B (zh) * | 2009-09-30 | 2013-01-02 | 意法半导体研发(深圳)有限公司 | 用于spu和stog良好性能的功率晶体管的布局和焊盘布图规划 |
US8659170B2 (en) * | 2010-01-20 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having conductive pads and a method of manufacturing the same |
KR101142339B1 (ko) * | 2010-06-17 | 2012-05-17 | 에스케이하이닉스 주식회사 | 반도체 칩 |
JP5656611B2 (ja) * | 2010-12-20 | 2015-01-21 | キヤノン株式会社 | 半導体装置及び固体撮像装置 |
US8896124B2 (en) | 2011-04-04 | 2014-11-25 | Nxp B.V. | Via network structures and method therefor |
KR101916088B1 (ko) * | 2012-04-02 | 2018-11-07 | 삼성전자주식회사 | 반도체 패키지 |
US9353682B2 (en) * | 2012-04-12 | 2016-05-31 | General Electric Company | Methods, systems and apparatus relating to combustion turbine power plants with exhaust gas recirculation |
US8539749B1 (en) * | 2012-04-12 | 2013-09-24 | General Electric Company | Systems and apparatus relating to reheat combustion turbine engines with exhaust gas recirculation |
US20130269358A1 (en) * | 2012-04-12 | 2013-10-17 | General Electric Company | Methods, systems and apparatus relating to reheat combustion turbine engines with exhaust gas recirculation |
JP5553923B2 (ja) * | 2013-06-14 | 2014-07-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20150262896A1 (en) * | 2014-03-11 | 2015-09-17 | Kabushiki Kaisha Toshiba | Evaluation element and wafer |
KR20150139190A (ko) * | 2014-06-03 | 2015-12-11 | 삼성전기주식회사 | 소자 및 소자 패키지 |
KR101625207B1 (ko) | 2014-08-08 | 2016-05-27 | (주)그린광학 | 박막 트랜지스터 및 그 제조방법 |
US9953954B2 (en) * | 2015-12-03 | 2018-04-24 | Mediatek Inc. | Wafer-level chip-scale package with redistribution layer |
US10038025B2 (en) | 2015-12-29 | 2018-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via support structure under pad areas for BSI bondability improvement |
JP6538960B2 (ja) * | 2016-02-23 | 2019-07-03 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2017224753A (ja) * | 2016-06-16 | 2017-12-21 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
JP2018026451A (ja) * | 2016-08-10 | 2018-02-15 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
KR102099749B1 (ko) * | 2018-01-19 | 2020-04-10 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5686762A (en) * | 1995-12-21 | 1997-11-11 | Micron Technology, Inc. | Semiconductor device with improved bond pads |
US5986343A (en) * | 1998-05-04 | 1999-11-16 | Lucent Technologies Inc. | Bond pad design for integrated circuits |
US6198170B1 (en) * | 1999-12-16 | 2001-03-06 | Conexant Systems, Inc. | Bonding pad and support structure and method for their fabrication |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0750771B2 (ja) * | 1988-03-28 | 1995-05-31 | 日本電気株式会社 | 半導体装置 |
JPH0797602B2 (ja) * | 1988-05-06 | 1995-10-18 | 日本電気株式会社 | 半導体集積回路装置 |
JPH0214527A (ja) | 1988-11-11 | 1990-01-18 | Seiko Epson Corp | Mos型半導体装置 |
JPH0362553A (ja) * | 1989-07-31 | 1991-03-18 | Nec Corp | 半導体集積回路 |
JPH0430570A (ja) * | 1990-05-28 | 1992-02-03 | Sanyo Electric Co Ltd | 半導体集積回路 |
JPH0476927A (ja) | 1990-07-19 | 1992-03-11 | Nec Corp | 半導体集積回路 |
JPH06196525A (ja) | 1992-12-24 | 1994-07-15 | Kawasaki Steel Corp | ボンディングパッドの構造 |
JPH06283604A (ja) | 1993-03-26 | 1994-10-07 | Olympus Optical Co Ltd | 半導体装置 |
JPH07254601A (ja) * | 1994-03-14 | 1995-10-03 | Ricoh Co Ltd | 半導体装置とその製造方法 |
JPH08293523A (ja) * | 1995-02-21 | 1996-11-05 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JPH08236706A (ja) * | 1995-03-01 | 1996-09-13 | Hitachi Ltd | 半導体集積回路素子およびその素子を組み込んだ半導体装置 |
JP3457123B2 (ja) * | 1995-12-07 | 2003-10-14 | 株式会社リコー | 半導体装置 |
JPH10199925A (ja) | 1997-01-06 | 1998-07-31 | Sony Corp | 半導体装置及びその製造方法 |
JPH11150114A (ja) * | 1997-11-19 | 1999-06-02 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP3544464B2 (ja) * | 1997-11-26 | 2004-07-21 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
KR100273703B1 (ko) | 1997-12-12 | 2001-03-02 | 윤종용 | 콘택관련 결함 및 콘택저항을 감소하기 위한 반도체 장치의 콘택구조 및 그 제조 방법 |
US6552438B2 (en) * | 1998-06-24 | 2003-04-22 | Samsung Electronics Co. | Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same |
JP2000195896A (ja) * | 1998-12-25 | 2000-07-14 | Nec Corp | 半導体装置 |
US6181016B1 (en) * | 1999-06-08 | 2001-01-30 | Winbond Electronics Corp | Bond-pad with a single anchoring structure |
FR2797056B1 (fr) * | 1999-07-28 | 2001-09-07 | Inst Francais Du Petrole | Methode d'analyse de signaux acquis pour pointer automatiquement sur eux au moins un instant significatif |
JP2001085465A (ja) | 1999-09-16 | 2001-03-30 | Matsushita Electronics Industry Corp | 半導体装置 |
JP2001185552A (ja) | 1999-12-27 | 2001-07-06 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP3727220B2 (ja) | 2000-04-03 | 2005-12-14 | Necエレクトロニクス株式会社 | 半導体装置 |
JP2001339047A (ja) | 2000-05-29 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2002016069A (ja) | 2000-06-29 | 2002-01-18 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US6586839B2 (en) * | 2000-08-31 | 2003-07-01 | Texas Instruments Incorporated | Approach to structurally reinforcing the mechanical performance of silicon level interconnect layers |
JP3434793B2 (ja) * | 2000-09-29 | 2003-08-11 | Necエレクトロニクス株式会社 | 半導体装置とその製造方法 |
JP2002170844A (ja) * | 2000-12-04 | 2002-06-14 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2002222811A (ja) | 2001-01-24 | 2002-08-09 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2002299567A (ja) | 2001-04-02 | 2002-10-11 | Sony Corp | 半導体素子 |
US6455943B1 (en) * | 2001-04-24 | 2002-09-24 | United Microelectronics Corp. | Bonding pad structure of semiconductor device having improved bondability |
JP2002324798A (ja) * | 2001-04-25 | 2002-11-08 | Nissan Motor Co Ltd | 電極構造 |
JP2003163267A (ja) * | 2001-11-29 | 2003-06-06 | Mitsubishi Electric Corp | 半導体装置 |
JP3967199B2 (ja) | 2002-06-04 | 2007-08-29 | シャープ株式会社 | 半導体装置及びその製造方法 |
US6885212B2 (en) | 2002-06-25 | 2005-04-26 | Fujitsu Limited | Semiconductor device and test method for the same |
US7049701B2 (en) * | 2003-10-15 | 2006-05-23 | Kabushiki Kaisha Toshiba | Semiconductor device using insulating film of low dielectric constant as interlayer insulating film |
US7057296B2 (en) * | 2003-10-29 | 2006-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding pad structure |
JP2005243907A (ja) * | 2004-02-26 | 2005-09-08 | Renesas Technology Corp | 半導体装置 |
US8477561B2 (en) * | 2005-04-26 | 2013-07-02 | Westerngeco L.L.C. | Seismic streamer system and method |
US20080008036A1 (en) * | 2006-07-06 | 2008-01-10 | Morley Lawrence C | Wide tow enabled by multicomponent marine seismic cable |
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- 2005-02-22 US US10/590,276 patent/US7701063B2/en active Active
- 2005-02-24 TW TW094105538A patent/TWI397135B/zh active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5686762A (en) * | 1995-12-21 | 1997-11-11 | Micron Technology, Inc. | Semiconductor device with improved bond pads |
US5986343A (en) * | 1998-05-04 | 1999-11-16 | Lucent Technologies Inc. | Bond pad design for integrated circuits |
US6198170B1 (en) * | 1999-12-16 | 2001-03-06 | Conexant Systems, Inc. | Bonding pad and support structure and method for their fabrication |
Also Published As
Publication number | Publication date |
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US20070182001A1 (en) | 2007-08-09 |
US20100155960A1 (en) | 2010-06-24 |
JPWO2005083767A1 (ja) | 2007-11-29 |
JP2005243907A (ja) | 2005-09-08 |
KR20060126572A (ko) | 2006-12-07 |
CN1947231B (zh) | 2010-06-23 |
TW200534415A (en) | 2005-10-16 |
CN101459172B (zh) | 2013-06-12 |
US8178981B2 (en) | 2012-05-15 |
CN101459172A (zh) | 2009-06-17 |
CN1947231A (zh) | 2007-04-11 |
KR101127893B1 (ko) | 2012-03-21 |
US7701063B2 (en) | 2010-04-20 |
CN101819956B (zh) | 2012-07-04 |
WO2005083767A1 (ja) | 2005-09-09 |
CN101819956A (zh) | 2010-09-01 |
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