TWI397135B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI397135B
TWI397135B TW094105538A TW94105538A TWI397135B TW I397135 B TWI397135 B TW I397135B TW 094105538 A TW094105538 A TW 094105538A TW 94105538 A TW94105538 A TW 94105538A TW I397135 B TWI397135 B TW I397135B
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TW
Taiwan
Prior art keywords
metal
bonding pad
semiconductor device
wiring
wiring layer
Prior art date
Application number
TW094105538A
Other languages
English (en)
Chinese (zh)
Other versions
TW200534415A (en
Inventor
Teruaki Kanzaki
Yoshinori Deguchi
Kazunobu Miki
Original Assignee
Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW200534415A publication Critical patent/TW200534415A/zh
Application granted granted Critical
Publication of TWI397135B publication Critical patent/TWI397135B/zh

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    • H—ELECTRICITY
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW094105538A 2004-02-26 2005-02-24 半導體裝置 TWI397135B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004051486A JP2005243907A (ja) 2004-02-26 2004-02-26 半導体装置
PCT/JP2005/002801 WO2005083767A1 (ja) 2004-02-26 2005-02-22 半導体装置

Publications (2)

Publication Number Publication Date
TW200534415A TW200534415A (en) 2005-10-16
TWI397135B true TWI397135B (zh) 2013-05-21

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Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243907A (ja) * 2004-02-26 2005-09-08 Renesas Technology Corp 半導体装置
JP2007042817A (ja) * 2005-08-02 2007-02-15 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
KR100849640B1 (ko) 2005-09-16 2008-08-01 가부시키가이샤 리코 반도체 장치
JP4630164B2 (ja) 2005-09-20 2011-02-09 ルネサスエレクトロニクス株式会社 半導体装置とその設計方法
JP2007123303A (ja) * 2005-10-25 2007-05-17 Nec Electronics Corp 半導体装置
US7456479B2 (en) * 2005-12-15 2008-11-25 United Microelectronics Corp. Method for fabricating a probing pad of an integrated circuit chip
JP4675231B2 (ja) * 2005-12-28 2011-04-20 パナソニック株式会社 半導体集積回路装置
JP5111878B2 (ja) 2007-01-31 2013-01-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5034740B2 (ja) * 2007-07-23 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5027605B2 (ja) 2007-09-25 2012-09-19 パナソニック株式会社 半導体装置
JP2009141064A (ja) 2007-12-05 2009-06-25 Renesas Technology Corp 半導体装置
US20100148218A1 (en) 2008-12-10 2010-06-17 Panasonic Corporation Semiconductor integrated circuit device and method for designing the same
JP2010147282A (ja) * 2008-12-19 2010-07-01 Renesas Technology Corp 半導体集積回路装置
JP5452064B2 (ja) 2009-04-16 2014-03-26 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US8310056B2 (en) * 2009-05-29 2012-11-13 Renesas Electronics Corporation Semiconductor device
CN102034823B (zh) * 2009-09-30 2013-01-02 意法半导体研发(深圳)有限公司 用于spu和stog良好性能的功率晶体管的布局和焊盘布图规划
US8659170B2 (en) * 2010-01-20 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having conductive pads and a method of manufacturing the same
KR101142339B1 (ko) * 2010-06-17 2012-05-17 에스케이하이닉스 주식회사 반도체 칩
JP5656611B2 (ja) * 2010-12-20 2015-01-21 キヤノン株式会社 半導体装置及び固体撮像装置
US8896124B2 (en) 2011-04-04 2014-11-25 Nxp B.V. Via network structures and method therefor
KR101916088B1 (ko) * 2012-04-02 2018-11-07 삼성전자주식회사 반도체 패키지
US9353682B2 (en) * 2012-04-12 2016-05-31 General Electric Company Methods, systems and apparatus relating to combustion turbine power plants with exhaust gas recirculation
US8539749B1 (en) * 2012-04-12 2013-09-24 General Electric Company Systems and apparatus relating to reheat combustion turbine engines with exhaust gas recirculation
US20130269358A1 (en) * 2012-04-12 2013-10-17 General Electric Company Methods, systems and apparatus relating to reheat combustion turbine engines with exhaust gas recirculation
JP5553923B2 (ja) * 2013-06-14 2014-07-23 ルネサスエレクトロニクス株式会社 半導体装置
US20150262896A1 (en) * 2014-03-11 2015-09-17 Kabushiki Kaisha Toshiba Evaluation element and wafer
KR20150139190A (ko) * 2014-06-03 2015-12-11 삼성전기주식회사 소자 및 소자 패키지
KR101625207B1 (ko) 2014-08-08 2016-05-27 (주)그린광학 박막 트랜지스터 및 그 제조방법
US9953954B2 (en) * 2015-12-03 2018-04-24 Mediatek Inc. Wafer-level chip-scale package with redistribution layer
US10038025B2 (en) 2015-12-29 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. Via support structure under pad areas for BSI bondability improvement
JP6538960B2 (ja) * 2016-02-23 2019-07-03 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2017224753A (ja) * 2016-06-16 2017-12-21 セイコーエプソン株式会社 半導体装置及びその製造方法
JP2018026451A (ja) * 2016-08-10 2018-02-15 エスアイアイ・セミコンダクタ株式会社 半導体装置
KR102099749B1 (ko) * 2018-01-19 2020-04-10 삼성전자주식회사 팬-아웃 반도체 패키지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686762A (en) * 1995-12-21 1997-11-11 Micron Technology, Inc. Semiconductor device with improved bond pads
US5986343A (en) * 1998-05-04 1999-11-16 Lucent Technologies Inc. Bond pad design for integrated circuits
US6198170B1 (en) * 1999-12-16 2001-03-06 Conexant Systems, Inc. Bonding pad and support structure and method for their fabrication

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750771B2 (ja) * 1988-03-28 1995-05-31 日本電気株式会社 半導体装置
JPH0797602B2 (ja) * 1988-05-06 1995-10-18 日本電気株式会社 半導体集積回路装置
JPH0214527A (ja) 1988-11-11 1990-01-18 Seiko Epson Corp Ｍｏｓ型半導体装置
JPH0362553A (ja) * 1989-07-31 1991-03-18 Nec Corp 半導体集積回路
JPH0430570A (ja) * 1990-05-28 1992-02-03 Sanyo Electric Co Ltd 半導体集積回路
JPH0476927A (ja) 1990-07-19 1992-03-11 Nec Corp 半導体集積回路
JPH06196525A (ja) 1992-12-24 1994-07-15 Kawasaki Steel Corp ボンディングパッドの構造
JPH06283604A (ja) 1993-03-26 1994-10-07 Olympus Optical Co Ltd 半導体装置
JPH07254601A (ja) * 1994-03-14 1995-10-03 Ricoh Co Ltd 半導体装置とその製造方法
JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
JPH08236706A (ja) * 1995-03-01 1996-09-13 Hitachi Ltd 半導体集積回路素子およびその素子を組み込んだ半導体装置
JP3457123B2 (ja) * 1995-12-07 2003-10-14 株式会社リコー 半導体装置
JPH10199925A (ja) 1997-01-06 1998-07-31 Sony Corp 半導体装置及びその製造方法
JPH11150114A (ja) * 1997-11-19 1999-06-02 Ricoh Co Ltd 半導体装置及びその製造方法
JP3544464B2 (ja) * 1997-11-26 2004-07-21 松下電器産業株式会社 半導体装置およびその製造方法
KR100273703B1 (ko) 1997-12-12 2001-03-02 윤종용 콘택관련 결함 및 콘택저항을 감소하기 위한 반도체 장치의 콘택구조 및 그 제조 방법
US6552438B2 (en) * 1998-06-24 2003-04-22 Samsung Electronics Co. Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same
JP2000195896A (ja) * 1998-12-25 2000-07-14 Nec Corp 半導体装置
US6181016B1 (en) * 1999-06-08 2001-01-30 Winbond Electronics Corp Bond-pad with a single anchoring structure
FR2797056B1 (fr) * 1999-07-28 2001-09-07 Inst Francais Du Petrole Methode d'analyse de signaux acquis pour pointer automatiquement sur eux au moins un instant significatif
JP2001085465A (ja) 1999-09-16 2001-03-30 Matsushita Electronics Industry Corp 半導体装置
JP2001185552A (ja) 1999-12-27 2001-07-06 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3727220B2 (ja) 2000-04-03 2005-12-14 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2001339047A (ja) 2000-05-29 2001-12-07 Matsushita Electric Ind Co Ltd 半導体装置
JP2002016069A (ja) 2000-06-29 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6586839B2 (en) * 2000-08-31 2003-07-01 Texas Instruments Incorporated Approach to structurally reinforcing the mechanical performance of silicon level interconnect layers
JP3434793B2 (ja) * 2000-09-29 2003-08-11 Ｎｅｃエレクトロニクス株式会社 半導体装置とその製造方法
JP2002170844A (ja) * 2000-12-04 2002-06-14 Oki Electric Ind Co Ltd 半導体装置
JP2002222811A (ja) 2001-01-24 2002-08-09 Seiko Epson Corp 半導体装置およびその製造方法
JP2002299567A (ja) 2001-04-02 2002-10-11 Sony Corp 半導体素子
US6455943B1 (en) * 2001-04-24 2002-09-24 United Microelectronics Corp. Bonding pad structure of semiconductor device having improved bondability
JP2002324798A (ja) * 2001-04-25 2002-11-08 Nissan Motor Co Ltd 電極構造
JP2003163267A (ja) * 2001-11-29 2003-06-06 Mitsubishi Electric Corp 半導体装置
JP3967199B2 (ja) 2002-06-04 2007-08-29 シャープ株式会社 半導体装置及びその製造方法
US6885212B2 (en) 2002-06-25 2005-04-26 Fujitsu Limited Semiconductor device and test method for the same
US7049701B2 (en) * 2003-10-15 2006-05-23 Kabushiki Kaisha Toshiba Semiconductor device using insulating film of low dielectric constant as interlayer insulating film
US7057296B2 (en) * 2003-10-29 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding pad structure
JP2005243907A (ja) * 2004-02-26 2005-09-08 Renesas Technology Corp 半導体装置
US8477561B2 (en) * 2005-04-26 2013-07-02 Westerngeco L.L.C. Seismic streamer system and method
US20080008036A1 (en) * 2006-07-06 2008-01-10 Morley Lawrence C Wide tow enabled by multicomponent marine seismic cable

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686762A (en) * 1995-12-21 1997-11-11 Micron Technology, Inc. Semiconductor device with improved bond pads
US5986343A (en) * 1998-05-04 1999-11-16 Lucent Technologies Inc. Bond pad design for integrated circuits
US6198170B1 (en) * 1999-12-16 2001-03-06 Conexant Systems, Inc. Bonding pad and support structure and method for their fabrication

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US20100155960A1 (en) 2010-06-24
JPWO2005083767A1 (ja) 2007-11-29
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KR20060126572A (ko) 2006-12-07
CN1947231B (zh) 2010-06-23
TW200534415A (en) 2005-10-16
CN101459172B (zh) 2013-06-12
US8178981B2 (en) 2012-05-15
CN101459172A (zh) 2009-06-17
CN1947231A (zh) 2007-04-11
KR101127893B1 (ko) 2012-03-21
US7701063B2 (en) 2010-04-20
CN101819956B (zh) 2012-07-04
WO2005083767A1 (ja) 2005-09-09
CN101819956A (zh) 2010-09-01

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