TWI351053B - - Google Patents

Info

Publication number
TWI351053B
TWI351053B TW092134804A TW92134804A TWI351053B TW I351053 B TWI351053 B TW I351053B TW 092134804 A TW092134804 A TW 092134804A TW 92134804 A TW92134804 A TW 92134804A TW I351053 B TWI351053 B TW I351053B
Authority
TW
Taiwan
Application number
TW092134804A
Other versions
TW200423226A (en
Inventor
Hiroyuki Nagasaka
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200423226A publication Critical patent/TW200423226A/zh
Application granted granted Critical
Publication of TWI351053B publication Critical patent/TWI351053B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW092134804A 2002-12-10 2003-12-10 Exposure apparatus, exposure method and method for manufacturing device TW200423226A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002357931 2002-12-10

Publications (2)

Publication Number Publication Date
TW200423226A TW200423226A (en) 2004-11-01
TWI351053B true TWI351053B (zh) 2011-10-21

Family

ID=32500881

Family Applications (2)

Application Number Title Priority Date Filing Date
TW099122292A TW201118926A (en) 2002-12-10 2003-12-10 Exposure apparatus, exposure method and method for manufacturing device
TW092134804A TW200423226A (en) 2002-12-10 2003-12-10 Exposure apparatus, exposure method and method for manufacturing device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW099122292A TW201118926A (en) 2002-12-10 2003-12-10 Exposure apparatus, exposure method and method for manufacturing device

Country Status (8)

Country Link
US (8) US20050237504A1 (zh)
EP (1) EP1571698A4 (zh)
JP (2) JP4596076B2 (zh)
KR (2) KR101036114B1 (zh)
CN (1) CN1723539B (zh)
AU (1) AU2003289271A1 (zh)
TW (2) TW201118926A (zh)
WO (1) WO2004053956A1 (zh)

Families Citing this family (218)

* Cited by examiner, † Cited by third party
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US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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CN1723539B (zh) * 2002-12-10 2010-05-26 株式会社尼康 曝光装置和曝光方法以及器件制造方法
TWI591445B (zh) * 2003-02-26 2017-07-11 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
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KR101431938B1 (ko) * 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
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KR101036114B1 (ko) 2011-05-23
CN1723539B (zh) 2010-05-26
KR20050084069A (ko) 2005-08-26
US20070035710A1 (en) 2007-02-15
US20060274294A1 (en) 2006-12-07
US7466392B2 (en) 2008-12-16
US20090002655A1 (en) 2009-01-01
WO2004053956A1 (ja) 2004-06-24
TW201118926A (en) 2011-06-01
US20060132736A1 (en) 2006-06-22
US20060098178A1 (en) 2006-05-11
KR20110003581A (ko) 2011-01-12
KR101101737B1 (ko) 2012-01-05
EP1571698A1 (en) 2005-09-07
EP1571698A4 (en) 2006-06-21
CN1723539A (zh) 2006-01-18
JP2009105471A (ja) 2009-05-14
US20050237504A1 (en) 2005-10-27
TW200423226A (en) 2004-11-01
US20070258063A1 (en) 2007-11-08
AU2003289271A1 (en) 2004-06-30
US7515246B2 (en) 2009-04-07
US20090079950A1 (en) 2009-03-26
JP4596076B2 (ja) 2010-12-08
JP2010161409A (ja) 2010-07-22

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