TWI330551B - Method and apparatus for removing contamination from substrate - Google Patents
Method and apparatus for removing contamination from substrate Download PDFInfo
- Publication number
- TWI330551B TWI330551B TW095149590A TW95149590A TWI330551B TW I330551 B TWI330551 B TW I330551B TW 095149590 A TW095149590 A TW 095149590A TW 95149590 A TW95149590 A TW 95149590A TW I330551 B TWI330551 B TW I330551B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- component
- solid
- solid component
- contaminant
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/12—Water-insoluble compounds
- C11D3/14—Fillers; Abrasives ; Abrasive compositions; Suspending or absorbing agents not provided for in one single group of C11D3/12; Specific features concerning abrasives, e.g. granulometry or mixtures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0004—Non aqueous liquid compositions comprising insoluble particles
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0013—Liquid compositions with insoluble particles in suspension
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Lubricants (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Liquid Crystal (AREA)
- Cleaning In General (AREA)
Description
九、發明說明: 【發明所屬之技術領域】 本發明係.用以自基板移除污染物之方法與設備。 【先前技術】 在製造半導體裝置如積體電路、雕 :系列的製造操作以將特徵部曰之J 些=以 】級中,圖型化内連線金屬線並使其電裝金隨後的 物中。基2的二面會暴露至各種類型的污染 例如,污染源尤其可包含處理氣1 皆污染源。 不指宝㈣+日=哪置將何能會無法操作。因此,兩車尤 2 之特徵部的情況下’以實質上清洗完 污染% : -fe-- 除了更進-步地使清關題複雜化之外,縣或斷裂。 部或導線的橋接部等。因此在現 進步而 無損害方式雜污染物的方法會隨著晶圓清洗技術的 不斷遇到挑戰。 、 【發明内容】 在-實施例巾’揭露-種自基板移除污染的方法。該方人 基板上方佈置清理材料的操作。該清理材料包含分散 = =之複成份。該方法亦包含將力施加至固體成分以 *體成分帶JL存在於基板上之污染物嶋近,俾於該 八=
建立交互作用。該方法更包含:自該基板移㈡ ㈣’俾以自基板移除已與_體成分產生交互作S 在另一實施例中,揭露一種自基板移除 S以她之管道。該管道係用以包含一限制:面該= ίΞΐϊΐίίίΐ向且其位向實質上平行於基板表面,而污毕 待由該管道接收之基板係浸沒於該清理材料内 =Ξϊί ί包的㈣媒體。該設備更包^溶 H八=產生森係设置於該管道内以產生清理材料内之 染面與基板之表面間的不溶成分,而污 含’揭露—種自基板移除污染的方法。該方法包 對向中,俾使基板之表面之位置與限制表面 散於液體媒體體:將清理材料定義為包含分 位置處在操作。本方法更包含在高度低於基板之 浮力不溶成分的操作。作用於不溶成分上的 不溶成分在基板上方並介於_表面與基板之間移動。 成刀在基板上方的移動使得—力被施加至液體媒體内的固體 1330551 成分上,俾使固體成分與存在於基板上的污染物產生交互作用。 自下列結合了附圖並以本發明之實例來說明的詳細敘述中,本 發明之其他態樣及優點將愈形清晰。 【實施方式】 本發明係針對清理晶圓表面之方法與材料來作闡述。然而熟知 此項技藝者應瞭解:可在脫離部分或全部該些具體細節的情況下 施行本發明。在其他情況下便不再贅述習知之處理操作,以免不 必要地模糊本發明之焦點。
圖1係根據本發明之一實施例,顯示自半導體晶圓(「晶圓」)105 移除/亏染物103用之清洗材料ιοί的物理圖。本發明之清洗材料 101包含:連續液體媒體107、固體成分109及不溶成分ηι。固 體成分109與不溶成分ill係分散於連續液體媒體内。在各 種的實施例中,連續液體媒體107可為水性的或非水性的。依據 特定的實施例,可將不溶成分m定義在氣相、液相、固相或上 ,三者之組合。在一實施例中,不溶成分U1被定義為複數種不 溶成分111的混合物,其中混合物中的每種不溶成分ill具有共 同的物理相或不同的物理相。例如在不同的實施例中,不溶成& 111之混合物内之不溶成分ln的物理相可包含氣相及液相、氣相 及液相、液相及固相,或多重氣相、多重液體及多重固體之 組合。 應注意:不溶成分ill係相對於連續液體媒體107不溶。在一 ,示性實施例中,不溶成分U1被定義為連續液體媒體107中之 氣體泡泡。在另一例示性實施例中,不溶成分U1被定義為 液體媒體107中之液滴。無論在任何與連續液體媒體1〇7與= 成分111相關的特定實施例中,固體成分109係分散 ^ ^ 液體媒體107内。 “斤7、遷績 應瞭解·依據特定之實施例,清洗材料10丨内之固 八 可具有的物理特性基本上可表現出_⑽任何次狀態^中^ 目氣體的相。例如’物理特性如彈性及可塑 鹿:ί;ί”之不同類的固體成分ι〇9錢變。此外, 岸^㈣^日日圓105之表面附近或與晶圓ι〇5之表面接觸時, ,夠避免黏附至晶圓1Q5之表面。此外 =化 之機械特性不應對晶圓105之表ί產生損害。i ’’ Ϊ 能之附近或與污染物103接觸時,^ 105之表面上的污染物⑽建立交互作用。制 佳尺寸及形狀應建立固體成請與污染 内的固體成分109應能夠與晶圓1〇5上的污毕物 又互作用,並同時避免黏附至晶圓105及損害曰 固體成分109應避免在液體媒體1〇7中解、: 至整個液體媒請中表面官能基團4於不具 之表面官能基團_體成分ί〇9 “^‘ 及成分⑽分散。依據固 用,,分 作 同的實施例中,固體成分l〇g可來杰取隹 〆夕種例如在不 體㈣、^結if,或物、】膠質⑹_、膠 a 也 1〇η)、凝,n〇cculatl〇n)、、结塊(鄉 承UC〇alescence)中之其他形態。應注意:列舉 )^ 體成分109之形態的上述清單並非代表包含所有科之、: 此丄,解下列之觀點:基本上固體成分⑽^早= =方式進行侧服爾物_之交互=任= ,例雜的固體成分⑽包含:脂肪族 合物、聚苯乙稀、多胜肽及其他黏彈性材料。固體成分^材^ 1330551 ^以在液體媒體107内之溶解限度的濃度存在。此外應瞭 鐡ό ^寸疋固體成分109相關的清洗效能可以溫度的函數來作改 工基本上代表任何由有機化合物所定義之酸,其中碳原 1鏈。知肪酸為脂肪族酸的一實例,其可用來作為清洗材 • ,t勺内^,體成分109。可用以作為固體成分1⑽之脂肪酸實例 广:〇.3葵酸(capric acid;)、月桂酸(lauric)、棕櫚酸 • 阳 mi:lc)—肉豆% 酸(myristic)、硬脂酸(stearic)、油酸 ^leiC)、.花生四烯酸(arachidic)、山酸(behenic acid)、 Φ lign〇Seric)、蝶酸(cerotic acid)。在一實施例中,固體成分 =9可代表由各種碳鏈長度自C4至約c_26所定義之脂肪酸。羧 酸基本上係由包含了一或多個羧酸基團(c〇〇H)之任何有基酸所定 義。當使用羧酸作為固體成分1〇9時,羧酸可包含各種碳鏈長度 自Cj,約C-100的混合物。又,羧酸可包含高於液體媒體107 中之溶解度限度的長鏈醇類(alc〇h〇ls)、醚類(ethers)&/或酮類 (ketones) ° ' 在某些b施例中,可能需要將分散劑材料添加至液體媒體 107,致使特殊的固體成分1〇9類型如脂肪酸分散於整個液體媒體 107中。例如’可將鹼添加至液體媒體107,以致使由低於化學當 • 量之材料如羧酸或硬脂酸所形成之固體成分109分散。此外 體成分109材料之表面機能可能會受到與液體媒體1〇7混溶之組 份的内含物所景》響’如叛酸酯(carboxyiak)、碟酸鹽 (phosphate)、硫酸鹽基團(sulfate groups)、聚酯多元醇基團 (polyol groups)、環氧乙烷(ethylene oxide)等。應瞭解之重點 為:固體成分109應能夠以實質上均勻的狀態分散於整個液體媒 " 體中’以使防止固體成分109結塊在一起而形成無法被驅迫 與晶圓105上之污染物103產生交互作用的形式。 如前所述’連續液體媒體107可為水性的或非水性的。例如, 在一實施例中可以去離子水來定義水液體媒體107。在另一實施例 ⑴0551 中,尤其可以碳氫化合物、氟碳化合物、礦物油或醇類來定義非 水液體媒體107。無論液體媒體1〇7為水性的或非水性的,應瞭 解:可改變液體媒體107以包含離子或非離子溶劑及苴他化g添 加物。例如,添加至液體媒體1()7之化學添加物可包含乒溶 Pji改性劑、螯合劑、極性劑、介面活性劑、氯氧化鐘、過氧化片 ίίΪ合氫祕四甲銨及流變改性劑如聚合物、微粒及多胜肽的 如前^ 以氣相、液相、固相或其組合來定義清洗材料⑻ 不洛成分。在具有以氣相所定義之不溶成分111的f施 溶Ϊ分311被定義作分散於整個連續液體媒體1G7中的^ 在體泡_為佔據清洗材料^ 據該清洗材料:至心^ 等,歧應 被相所定義之不溶成分111的實施例中,不溶成分m *溶體1G7中的液滴,其中該些液滴 l07 油洛性表面改性劑來竹盏 λ ^r可使用 在清洗處理期義 =容成分111之反應性液體。 上,俾使液11媒體1G7内之固體成分 或與污染物,,污染_的附近 ,,,向下力係藉由此機 - 成分109受到叫用至固體成分1G9上。當固體 觸時’固體成分⑽ir亏1G3或與污染物103接 成分1〇9與污毕物lnqJ ji03之間建立起了交互作用。固體 圓105間的轉力互作収以克服污染物103與晶 口此,自晶圓1〇5將固體成分1〇9移除時, 11 I33〇55l 圓將與固體成分109交互作用之污染物1Q3移除,即,自 曰曰圓105清洗污染物1〇3 〇 圖严’係根據本發明之-實施例顯示清洗材料1〇1如何發揮 、主曰曰圓105移除污染物1〇3的功用。應瞭解:圖2A_2B中所示之 =洗材料101具有與上列圖!所述者相同的特性。如圖2A中所示, .洗材料抓之液體媒體107内,將固體成分109插入至污染 03與不溶成分hi之間。無論液體媒體1〇7内的不溶成分ιη -^體泡泡歧體液滴,皆具有相關的表面張力。因此,當對著 丄體成分1〇9下壓不溶成分111日寺,不溶成分⑴變得變形並將 _ =力⑺作用至固體成分1G9上。此向下力⑺具有使固體成分 朝向晶® 105與其上之污染物1〇3移動的功能。在一實施例 中’當固體成分109在充分接近污染物1〇3處受力時,固體成分 ^09,污染物、H)3間產生交互作用。在另—實施例中,當固體成分 09貫際上與污染物1〇3接觸時,固體成分1〇9與污染物1〇3間產 生交互作用。 固體成分109與污染物1 〇3之間的交互作用力係強於將污染物 103連結至晶® 105的連結力。此外,在固體成分1〇9與污染物 103結合的:實施例+ ’用以自晶圓1〇5移除固體成分1〇9的移除 力係強於將污柒物103連結至晶圓1〇5的連結力。因此如圖2B中 _ 所示,當自晶圓105移除固體成分1〇9時,亦自晶圓1〇5移除了 連結至固體成分109的污染物1〇3。應注意:由於固體成分⑽ 與污染物103父互作用以影響清洗處理,故自整個晶圓移 污染物103係取決於固體成分1〇9於整個晶圓1〇5上的分佈良好 程度。在-較佳實施例中’ _成分⑽將會良好地分佈以^於 . 基本上晶圓105上的每一污染物1〇3皆會在至少一固體成分1〇9 - 的附近。亦應注意·· 一個固體成分10Θ可同時或接續地與多個、、 染物103接觸或交互作用。 / 固體成分109與污染物1〇3之間的交互作用可經由一或多個機 制來建立,包含尤其是黏附、碰撞及吸引力。固體成分1〇9與污 12 1330551 染物103之間的黏附可經由化學交互作 六^ ^ 立。例如在-實施例中,化學交互 勿^互作用來建 103之間產生類黏膠作用。在另一鹿H^7、109與污染物 物103之間的物理交互作用鮮由貝' 成分⑽與污染 速。例如,固體成分性所加 到塵印。在另一實物固體成分⑽受 ,傳遞至污染物•藉, 所需的機械力。 啤1⑹秒陈巧·_物133 到污染物103之壓印而產生的固體成分ι變 成與污染物103之間產生機械性連結。例如,污 面形悲學性質可俾使當污染物1Q3觀迫朗體成分⑽、 =體成分⑽之部分材料進人污祕1()3 ^ 内,固體成分⑽無法輕易地自該區域逃脫,藉 此外,當污染物⑽被屢迫至_成分⑽;生建二 空力以抵抗i亏染物103自固體成分1〇9被移除。 運立/、 在另一實施例中,經由直接或間接接觸而自固體 可使污染物⑽脫離晶圓1〇5。在此實施例 染Ϊ 1〇3更軟,則固體成分⑽在碰撞期間很有可Ϊ發生更 在固致使污染物1〇3自晶® 105脫離的動能較小。然而’ L 103更軟的情況下’固體成分109與污染物 1=!!附連結可能會更強。相反地,若固體成分⑽至少與 物上03 —樣硬,則在固體成分1〇9與污染物1〇3之間會發生 的能量傳遞’因此增加了使污染物103自晶圓:脫 的力。」而,在固體成分1〇9至少與污染物一樣硬的情況下, ^員固體成分⑽形變的交互作用力可減少。應注意:固體成分 109與巧染物103的物理特性及相對速度將會影響兩者間的碰撞 13 1330551 交互作用。 除了河述者之外’在一實施例中 之間的交互作用將來自於靜電引 體成;7⑽與污染物103 染物⑽具有相反的表面電=,^如將彼=^分⑽與污 ⑽與污染物⑽之間的靜電吸引有固體成分 連結至晶圓105的力。 月匕足以克服將污染物1〇3 在另一實施例中,在固體成分1〇9 電推斥。例如,固體成分⑽之間可存在靜 何或正表面電荷。若可使固體成分⑽白表面電 近,則凡德瓦吸引力可克服兩者間 ς 物ι〇3彼此充分接 所施加至固體成分⑽的力可能足:^不=分111 中,可調整液體媒體107之。此外在另一實施例 染請之-者或兩者上 少俾辅助妓彻。 τ致㈣料L電推斥減 勺二3 本Γ月之一實施例顯示自基板移除污染物之方法 3五之人 广在圖3 粒^ 之=類,;物,包含但不, 備之污染及晶圓背側之微粒污染。^曰曰圓處理设 圖3之方法包含操作咖:用以將清洗材料施加至基板上方, ΪΪ料包含分散於液體媒體⑽固體成分。圖3之方法 =内的固體成分以懸浮的方式分散於㈣媒體内。又=
ί ί板;避免黏著至基板。在-實施例中,ί S 為非結晶固體。在更+ Λ例中’將·體成分定義 Β曰U篮在更另,、知例中,該固體成分代表結晶與非結 14 J:=二合。此外,在不同的實施例中’液It媒體可為水性的 , 备亦包含操作303 .將力施加至固體成分以將固體成分帶 立基板上之污染物的附近,俾使固體成分與污染物之間建 又乍用。如前所討論,在清洗材料内提供 ^體成分帶至污染物附近的力施加至固體成分成二 = 體成包含肋控邮溶成分哺經控制之力量施加至固 溶。可將液體媒體内的不溶成分定義為氣體泡泡或不 滴的組合。卜’液體賴_不溶成分可代表氣體泡泡及不溶液 將不在一實施例中’在將清洗材料施加至基板上方之前, 於液體媒體内。然而在另—實施财,此方法可 :所:的時,可心 之前將固體成分拉向基板的功用。接著重降成Π 媒體内的氣體離開溶液而形成氣體 :之上朝=分氣體泡泡將形成於固體成 在各種只施例令’固體成分與污染物之 = 附力'碰撞力、吸引力或其組合 2用了猎由黎 方法包含帛叹魏體媒體之化^ 1施例中,該 之間之交互作用的操作。固體成分與污染物 固體此成:,物之-或兩者:面:媒 此外’在-實施射,本方法 料低h推斥。 以增進固體成分與污染物之間之交清洗材料之溫度 可控制清洗材料之溫度,以控制固乍==。更具體而言’ 版战刀之性質。例如,在較高 15 染物時能有更佳的保雜有^的延展性,俾使其在受壓倚靠污 上現場形成固體成分 媒體中。亦可使當固11成分較有可能溶解於液體 —— j使用皿度來控制及/致使自液體-液體懸浮液在 體二法可包知錢雜於連續液_ 固體著可f:列步驟來達成:將 固體不互溶而===::成刀’其可與溶舰溶但卻與該 «•亥方法更包含操作3〇5 :自基板移除該固體成分,俾自該 ,除與該固體成分交互作用之污染物。在—實施例巾,該^包 含用以控制基板上方之清洗材料之流量的操作,以控制g增進^ 基板移除該固體成分及/或污染物。 只要利用施加力至清洗材料之固體成分俾使固體成分與待移 除之污染物之間產生交互作用的手段,本發明之用以自基^移^ 污染物的該方法可以許多不同的方式來實施。圖4A係根據本發明 之—實施例來顯示自晶圓移除污染之設備。該設備包含用以^箭 頭403所示來接收晶圓1〇5的管道401。應注意:定義管道4〇1 内部之長度402及寬度404以容納晶圓1〇5。又,在一實施例中可 5周整管道401之南度404。管道401係用以容納如前所述之清理材 料101。因此’當晶圓105被載入管道樹中時,晶圓1〇5被浸沒 至清理材料101内。應注意:管道401可由任何材料所製成,只 要該材料具有能夠與清理材料101與晶圓105化學相容的足夠強 度。 圖4B係根據本發明之一實施例來顯示具有晶圓105置於其中 之管道401的側橫剖面圖。管道401包含限制表面406,此限制表 相斜^染將自日日® 105該表面移除。管道401及晶阊咖 設置在管道彻之較低末端/高處, 如前所討論,可自不溶於液體m f ump η。
ϊί;ΐ^^〇:5 407 π S *==/在9圓^=間,施峨力以使不溶成 λ; a n 1nc 囫105上方移動。應注意:當不溶成分in 到ΐί 401 _分相對於晶圓105的位置係受 上施财,被施加用; 例中,不、於出八 私動的驅動力為浮力。在另一實施 圓伽上方ί;ί=。9的分散_供使不溶成分⑴在晶 多生請設計成具有單產生點或 設備可包含基板支撐3生^的歧管。此外’應注意: 的晶圓1〇5。 /n匕私期間旋轉及/或移動管道内 間之i係。當111J體部109、污染物103及晶圓1〇5 41〇之清理材料自^刀圓在曰3® 105表面之上方移動時,厚度 離。應注意:與液體媒體介面分 移動的實施例中,% 動不〉谷成分111在晶圓⑽之上方 浮力與不溶成分度412將導致浮力的對應增加。當 長,因此增加了清理材^應;^增加時’可使不溶成分變得被拉 分大’則不溶成分410。若清理材料之厚度410變得充 以致使W分⑽與;;= :於固體成分⑽ 分m之速度ν 士:物103間之父互作用。又,當不溶成 成分m的滞留g^n、^在晶圓ι〇5表面上方之特定位置處不溶 ㈣減少。因此,應設定傾斜角度412來適當地 17 1330551 成分111的速度V。又,應控制限制表面406與晶圓1〇5 間之間隔距離404,俾使清理材料厚度41〇不會變 、 、白二H虞本發明之—實施例顯示不溶成分111如何發揮驅 使固體成分⑽進人污染物⑽之附近的作用 二hi橫跨液體媒體1G7内之固體成分⑽與污H 之上方知,不溶成分以力F驅迫固體成分⑽ 分⑽與污_ _驅迫得 時,兩者間會發生交互作用。由不溶成们i
士的力:係與不溶成分nl及液體媒體107間之 相J ΐ物材料厚度410内之剪應力。:,ί 液體媒體m間之介面處的介面力。 應力及,1面力具有幫助污染物⑽自晶圓1G5表面離開的 !05 i 本發Λ之—實施例顯示在不溶成分⑴橫跨晶圓 κίΐ*2晶圓1〇5表面移除污染物103。在圖4Ε之 i = 固體成“ -實施例中,固體^在而自晶圓105被移除。在另 103產生交互作用以ή s η 不與π乐物結合的方式與污染物 :單獨地自晶= ===== 用以在清理材料㈣發流動^”備可包含 移^ 1〇5 染_ ^圖示自晶_表面移除污 分111為非水性的而固體成107為水性的、非溶成 橫跨固體成分⑽之上具有表面活性。當不溶成分m 成分109上亦渴潤了固w八2成分亚非僅將力F作用於固體 、潤了固體成分跡俾使固體成分109被拉入不溶 18 1330551 體媒體107間之介面區。因此,藉由固體成分109 姊與液體媒體間的介面,促進了自晶圓105移除固 肢成分109與污染物103之組合。 u 庙、、:j: i”:圖之设備係針對特定的例示性實施例來作闡述,但 :二提供不溶成分111的驅動力俾使不溶成分111 石你田作用i成分109上以使111體成分與污染物⑽產生交 杯上用’可改變圖4A~4F的設備以將晶圓維持在水平、垂直或颠 ΐΐ同的實施例中,可旋轉、拉、推晶圓105,或 田,合成刀U1杈跨晶圓105之上方時同時對其進行擾動。
此外’使用® 4A-4F之設備並結合了圖3之方法所施行的 f,可根據指定參數之特殊控制設定的配方來 ^壓力、流量及時間。在一實施例中,該設備丁以J 2⑽與污5_間之交互作用並促進自晶圓 ,内之清理材料的溫戶:備之 二了圖3之方法所施行的清理處理可以反覆之方式(即 ^用^時%^圖曰4^之單晶圓1〇5設備所述之原^延 1甲至用以同蚪處理多片晶圓1〇5的設備。 圖5係根據本發明之另—實施例之自基板移
,圖。此方法包含操作5()1,用以將基板浸沒至清理材J ίί面之位置與限縣面對向且其實質位向與限制表面平行ΐ ,物將自基板表面被移除。如前所討論,4Α_4Ε 二备 例.當基板浸沒於清理材料内時,基板之位置*^、、^、 其實質之位向與限制表面平行。應注意:圖5 體媒體107内的固體成分ι〇9。 材枓包含分散於液 此方法亦包含操作503,用以使基板與限制表面—起相對於水 19 同的實施例中,可在使基板位置與限制表面對 用以在高度低於基板之位置處產生清理材 美;刀。如刖所討論,圖狃顯示了下列實例:在度低於 &板位置處產生清理封料内之不溶成分,其中晶圓105代表基 而於不溶成分上的浮力使不溶成分在基板上方並介於限制声 媒多動。不溶成分在基板上方之移動將力施加至液^ 交分’俾使固體成分與存在於基板上的污染物產ΐ 何將::用;St圖4C:4F顯示了下列實例: 用,俾物以促進固體成分與污細^ 除之包含數侧外操作以促進污染移 傾斜角度t4 ::制:=以一起調整基板與_ 人田j 以控制基板上方之不溶成分的速度。又,可句 二;tefi限制表面與基板間之間隔距離的操作,以在不溶成分 於T上方移動時㈣不溶成分與基板間之距離。不办成刀 動;^ί作m盾環清理材料以引發基板上方的清理材料流 補充化學“種以材料流動可允許在清理材料内 包含用以自基杨除之污雜的義。此方法更可 分與污染以促進固體成 互作用。材+度,以促賴體成分與污染物間之交 時,妹ί.可施行—操作以在不溶成分於基板上方移動 H轉、平移或旋轉與平移兩絲驗基板。 明,但應導體晶®移除污染物的方絲敘述本發 導體曰i 本發明的原理及技術可同樣3^應用至非半 面例二:使用本發明來清理半導體製 表面,其中任何設備表面意指與晶圓作環境交 20 1330551 面如與晶圓共享氣體空間的表面。亦可將本發明用 空㈣移除的技術領域。例如’可使用本發明來移除太 學、能ΐ =之f件上的污染’或其他高科技領域如表面科 體裝置ί。ί;解微、平面處理、太陽能電池、記憶 應代表所之本發明的例示性領域不 ,本上可泛指所用之 項技來魏本㈣,但雜意:熟知此 替代、添加、;究圖示時會體認到本發明的各種 明之真正精神;=:=明=在本發 【圖式簡單說明】 之—實糊示㈣半_圓移除污染 圓發明之—實施例顯示清理材料如果發揮自晶 圖圖3練據本發明之一實施例顯示自基板移除污染的方法流程 ^ 之—實施纖示自晶®移除科之設備。 道的側横剖ίί之—實_具有晶圓放狀其中之管 染細1麻#齡、_成分、污 分麵峨祕㈣揮將固體 上=_她齡娜圓表面 圖4f係根據本發明之另—實施例顯示自晶ϋ表面移除污染物。 21 丄:^υ:)Μ 實施例顯示自基板移除污染之方法流 圖5係根據本發明之另一 程圖。 【主要元件符號說明】 :清洗材料 103 ·污染物
105 :半導體晶圓 107 :連續液體媒體 1〇9 :固體成分 111 :不溶成分 3〇1 : ϊΐί材料施加至基板之上,其中該清洗材料包含分散 於液體媒體内的固體成分。 用 303=力於_成分以職體成分帶至存在於絲上之污染 的附近’俾於该固體成分與污染物之間建立交互作 305·自基板移除該固體成分, 用之污染物移除。 以自基板將與固體成分交互作 401 402 403 404 405
管道 長度 箭頭 寬度 源 406 :限制表面 407 :管線 408 ·水平表面 409 :不溶成分產生器 410 :清理材料厚度 412 :傾斜角度 501 .將基板浸沒於清理材料中, 俾使基板之表面的位置與限 22 制表面對向且其實質位 该基板之該表面移除。 ;Μ限制表面,污染待自 5。5 : ίίί基 獅pm π材料内產生*溶成分, 俾使不/合成刀在基板上方移動並施力至清理材料内的 固體成分,以使固體成分與待自基板移除之污染物產生 交互作用 23
Claims (1)
1330551 99年6月15日修正替換頁 申請專利範圍: ~~ 1. -種自A板移除污染物之方法,包含下列步驟: 链内的將於基板上方,該清理材料包含分散於液龍媒 i於複數固體成分的—固體成分以將該固體成分帶?;r i物附近’俾使該固體成分與該污Ϊ物rlii -機械性找,肋使該污制 2物^建立 生成;及 物之騎而產生的制體成分之形變而 自該基板移除顧體成分,俾轉與翻 結的該2染物自該基板移除至該液 bee地連 與該液體舰内之體成份機械性地連έΓ。 4料物保持 其中該複 2. 如申請專纖圍苐丨項之自基 數固體成分係㈣浮方式分胁概體媒H方法’ 其中,避 3. 如申請專纖圍第丨項之自基 免該複數隨齡鮮_綠_域mm。 其中該固 項之自咖除污_之方法, 其中該固 5. 如申請專利範圍第丨項之自基 體成分為非結晶固體。 , 巧木物之方去, 6. 如申請專利範圍第i項之自基板移 體成分為麟族酸、魏、聚合物 中該固 肽或黏彈性材料。 氣七版來本乙烯、多胜 • -· 99年6月15日修正替換頁 95149590(無劃線) 7.如申請專利範圍第1項之自基板移除污染物之方法,其中該画 體成分係形成黏耀"(agglutination)、凝結(coagulation)、凝聚 (flocculation)、結塊(agglomeration)或聚結(coalescence)。 8_如申請專利範圍第1項之自基板移除污染物之方法,其中該複 數固體成分之一部分在該液體媒體内形成固體成分之網路,其中 經由該固體成分之網路所傳遞之機械應力建立該固體成分與該污 染物間之該機械性連結。 9,如申請專利範圍第1項之自基板移除污染物之方法,其中該液 體媒體為水性的。 1項之自基板移除污染物之方法’其中該 ^理專利範圍第1項之自基板移除污染物之方法,其中該 體成包含複數之不溶成分,該不溶成分制⑽力至該固 污‘:門绪?固體成分帶至該污染物附近,以在該固體成分與該 τ木物間建立該機械性連結。 抑t二專她®第11項之自基板移除污染物之方法,更包含: 一該不溶成分以將經控制之力量施加至該固體成分。 液利範^11項之自基板移除污染物之方法,其中在 、版内以軋體泡泡的形式來形成該不溶成分。 液利,第11項之自基板移除污染物之方法,其中在 〜媒體内以液滴的形式來形成該不溶成分。 1330551 99年6月15日修正替換頁 15.如申請專利範圍第11項之自基板移除污染^線) 歸财雜分,财溶成分之 、母不,合成刀/、有共同的物理相或不同的物理相。 之自基板移除污染物之方法’其中在 理材置於板上方讀於該液體聰_成該不溶 Π.如申請專利範圍第U.項之自基板移除 該不=清理_魅於該絲上方之後於 I8.如申請專利範圍第Π項之自基板移除污染物之 ===境壓力降低時在該液體媒體内自已溶解之 吸引力中的-或多者所建立。竹'一 寸力、碰撞力及 20.如申請專利範圍“項之自基板移除污 產生;顧德學性㈣促進軸軸分_^間 21· 即1項之自基板鎌㈣物之方法,更包含· 機械ίίΪΓ理㈣之溫度贼__成分_科物間產生 更包含: 22.如申請專利範圍第i項之自基板移除污染物之方法, 26 1330551 卯年6月15曰修正替換頁 圍第1項之自基板移除污染物之方法,其中該 21 2請專利範圍第W之自基板移除污染物之方法,更包含: 内形温度,致使現場於該基板上的該液體媒體 25.如申請專利範圍第!項之自基板 固體劑添加至該液體媒體,以在該液體媒二= 自4=除污染物之方法,其中* 中,該沈係與該溶齊體内的溶劑 27. —種自基板移除污染的設備,包含: 制表管面mm該管道係用以包含一限制表面,此限 板之該林«料斜行於該基 體成分的液體 及 ㈣===收之基板浸沒 27 99年6月15日修正替換頁 95149590(無劃線) ' L 範圍第27項之自基板移除污染 在於;該液體媒體内之制體成分簡·體成分帶至存 染物附近,俾於該固體成分與該污染物之間建 範㈣27項之自基板移除㈣的設備,其中該不 3〇m利範圍第27項之自基板移除污染的設備,更包含: 染物編俾使已與污 板移除污染的設備,其中定義 為浮力。^水千夾一角度,俾使移動該不溶成分的該驅動力 t申s胃專她圍第27項之自基板移除污染龄備,盆中該管 ^係用以調整該管道之鎌面與該基板之絲關的^隔距 質n#兮阳蜇測及調登該清理材料之化 心w二:成分與該污染物間產生交互作用並促進自該基 33产27項之自基板移除污染的設備,更包含: i足ίιίΐ^、統’用以監測及調整該清理材料之化學性 板移除該污染物 34. 含 28 1330551 99年6月15日修正替換頁 95149590(無劃線) 範圍第27項之自基板移除污染的設備,其中該不 命成刀產生⑽用以產生液相錢相之該不溶成分。 ϋ.成2 圍第27項之自基板移除污染的設備,其中該不 定義為歧管’用以產生橫跨該基板之該表面的 37· 圍第27項f自基板移除污染的設備,更包含: 板。 土 1 ’用以在該官道内旋轉、平移或旋轉與平移該基 移除污染的設備,其中該設 39. -種自基板移除污染的方法,包含下列步驟: 矣而板ί沒於清理材射,俾使該基板之表面的位置鱼限制 向平行於該限制表面’污染物係待自該基板2 表面成分厂 該基板上的污染物產生交互作用。 ”子在於 ^申5时利顧第39項之自基板移除污染的方法,盆中 =s;.=族酸、緩酸、聚合物'臘、石嚴、聚笨‘ 29 1330551 • 99年6月15曰修正替換頁 95149590(無劃線) ' =·、如申請專利範圍第39項之自基板移除污染的方法,其中該固 肢成刀'係开》成黏膠(agglutinati〇n)、凝結(coagUiati〇n)、凝聚 (flocculation)、結塊(agglomeration)及聚結(coalescence)中 之一或多者。 雕.、如申請專利範圍第39項之自基板移除污染的方法,其中該固 =成分在該液體媒體内形成固體成分之網路,其中經由該固體成 分之網路所傳遞之機械應力與該污染物產生交互作用。 f·触如申請專利範圍第39項之自基板移除污染的方法,在該液體 茱肢内以氣體泡泡的形式來形成該不溶成分。 申請專利範㈣39項之自基板移除污染的綠,在該液體 媒體内以液滴⑽絲形賴不減分。 4版 4^. 請專利範圍第39項之自基板移除污染的方法,1 之混合物的形絲形顏複數不溶成分,該不溶成分之⑺ 口物中的母一不溶成分具有共同的物理相或不同的物理相。此 46. 如Λ請專利範圍第39項之自基板移除污染的方法,更包人· 之該限齡㈣者⑽㈣度啸偷基板^方 47. 如申請專利範圍第39項之自基板移除污染的方 调整該限制表面無基板間關隔輯 ^ . 該基板上方_時㈣該不減分_基板_ = ^成分於 48. 如申請專利範圍第39項之自基板移除污染的方 尺包含: 30 4^理材料以引發該基板上方之清 99年6月】5曰修正替換頁 95149590(無劃線) 49.====移除污染的方法,更包含: 間產體成分舆該污染物 5°. 基板移除污染的方法,更包含: 生交體成分嶋物間產 51.如申請專利範圍第39項之自基板移除污染的方法,更包含. 與平移當縣板上_時,_轉、平移或旋轉 十一、圖式: 31
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- 2006-11-29 SG SG200904463-7A patent/SG154438A1/en unknown
- 2006-11-29 EP EP11192481A patent/EP2428557A1/en not_active Withdrawn
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