CN101370885A - 使用双相基片清洗混合物的方法和系统 - Google Patents
使用双相基片清洗混合物的方法和系统 Download PDFInfo
- Publication number
- CN101370885A CN101370885A CNA2006800489399A CN200680048939A CN101370885A CN 101370885 A CN101370885 A CN 101370885A CN A2006800489399 A CNA2006800489399 A CN A2006800489399A CN 200680048939 A CN200680048939 A CN 200680048939A CN 101370885 A CN101370885 A CN 101370885A
- Authority
- CN
- China
- Prior art keywords
- acid
- cleaning
- substrate surface
- viscous fluid
- solids component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 118
- 238000004140 cleaning Methods 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 34
- 150000001875 compounds Chemical class 0.000 title abstract description 6
- 239000007787 solid Substances 0.000 claims abstract description 147
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000012530 fluid Substances 0.000 claims description 66
- 239000011538 cleaning material Substances 0.000 claims description 30
- 238000011109 contamination Methods 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 25
- 150000001735 carboxylic acids Chemical class 0.000 claims description 22
- 239000002253 acid Substances 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 239000008367 deionised water Substances 0.000 claims description 16
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- 230000003993 interaction Effects 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 9
- 239000013543 active substance Substances 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 8
- 150000002632 lipids Chemical class 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000908 ammonium hydroxide Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 230000007062 hydrolysis Effects 0.000 claims description 6
- 238000006460 hydrolysis reaction Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 claims description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims description 4
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 claims description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 4
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 claims description 3
- 150000001721 carbon Chemical group 0.000 claims description 3
- YWWVWXASSLXJHU-AATRIKPKSA-N (9E)-tetradecenoic acid Chemical compound CCCC\C=C\CCCCCCCC(O)=O YWWVWXASSLXJHU-AATRIKPKSA-N 0.000 claims description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 2
- YWWVWXASSLXJHU-UHFFFAOYSA-N 9E-tetradecenoic acid Natural products CCCCC=CCCCCCCCC(O)=O YWWVWXASSLXJHU-UHFFFAOYSA-N 0.000 claims description 2
- 239000005639 Lauric acid Substances 0.000 claims description 2
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 claims description 2
- 239000005642 Oleic acid Substances 0.000 claims description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 2
- 235000021355 Stearic acid Nutrition 0.000 claims description 2
- HXWJFEZDFPRLBG-UHFFFAOYSA-N Timnodonic acid Natural products CCCC=CC=CCC=CCC=CCC=CCCCC(O)=O HXWJFEZDFPRLBG-UHFFFAOYSA-N 0.000 claims description 2
- JAZBEHYOTPTENJ-JLNKQSITSA-N all-cis-5,8,11,14,17-icosapentaenoic acid Chemical compound CC\C=C/C\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O JAZBEHYOTPTENJ-JLNKQSITSA-N 0.000 claims description 2
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 claims description 2
- 235000020661 alpha-linolenic acid Nutrition 0.000 claims description 2
- 229940114079 arachidonic acid Drugs 0.000 claims description 2
- 235000021342 arachidonic acid Nutrition 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- 235000020673 eicosapentaenoic acid Nutrition 0.000 claims description 2
- 229960005135 eicosapentaenoic acid Drugs 0.000 claims description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 2
- 229960004232 linoleic acid Drugs 0.000 claims description 2
- 229960004488 linolenic acid Drugs 0.000 claims description 2
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 claims description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 2
- 229960002969 oleic acid Drugs 0.000 claims description 2
- SECPZKHBENQXJG-FPLPWBNLSA-N palmitoleic acid Chemical compound CCCCCC\C=C/CCCCCCCC(O)=O SECPZKHBENQXJG-FPLPWBNLSA-N 0.000 claims description 2
- 239000008117 stearic acid Substances 0.000 claims description 2
- 229960004274 stearic acid Drugs 0.000 claims description 2
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 claims description 2
- DPUOLQHDNGRHBS-MDZDMXLPSA-N trans-Brassidic acid Chemical compound CCCCCCCC\C=C\CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-MDZDMXLPSA-N 0.000 claims description 2
- GWHCXVQVJPWHRF-KTKRTIGZSA-N (15Z)-tetracosenoic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCCCC(O)=O GWHCXVQVJPWHRF-KTKRTIGZSA-N 0.000 claims 1
- PIFPCDRPHCQLSJ-WYIJOVFWSA-N 4,8,12,15,19-Docosapentaenoic acid Chemical compound CC\C=C\CC\C=C\C\C=C\CC\C=C\CC\C=C\CCC(O)=O PIFPCDRPHCQLSJ-WYIJOVFWSA-N 0.000 claims 1
- PIFPCDRPHCQLSJ-UHFFFAOYSA-N Clupanodonic acid Natural products CCC=CCCC=CCC=CCCC=CCCC=CCCC(O)=O PIFPCDRPHCQLSJ-UHFFFAOYSA-N 0.000 claims 1
- KYWGIJCWOAHVGG-UHFFFAOYSA-N diazanium dodecane sulfate Chemical group S(=O)(=O)([O-])[O-].[NH4+].CCCCCCCCCCCC.[NH4+] KYWGIJCWOAHVGG-UHFFFAOYSA-N 0.000 claims 1
- 235000021290 n-3 DPA Nutrition 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 230000008698 shear stress Effects 0.000 claims 1
- 239000000356 contaminant Substances 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 8
- 239000000499 gel Substances 0.000 description 15
- 238000010008 shearing Methods 0.000 description 15
- 239000008247 solid mixture Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 4
- 238000005411 Van der Waals force Methods 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013618 particulate matter Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical group CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- -1 halogen isocyanate Chemical group 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229920001184 polypeptide Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 102000004196 processed proteins & peptides Human genes 0.000 description 2
- 108090000765 processed proteins & peptides Proteins 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 241000707825 Argyrosomus regius Species 0.000 description 1
- 208000033999 Device damage Diseases 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- 150000002148 esters Chemical group 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002540 isothiocyanates Chemical group 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- XZYHDXZNNDZXSR-UHFFFAOYSA-N n-(1,1-dioxothiolan-3-yl)-n-methyl-2-[(4-phenyl-5-pyridin-4-yl-1,2,4-triazol-3-yl)sulfanyl]acetamide Chemical compound N=1N=C(C=2C=CN=CC=2)N(C=2C=CC=CC=2)C=1SCC(=O)N(C)C1CCS(=O)(=O)C1 XZYHDXZNNDZXSR-UHFFFAOYSA-N 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000004713 phosphodiesters Chemical class 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000005190 thiohydroxy group Chemical group 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000003190 viscoelastic substance Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/12—Water-insoluble compounds
- C11D3/14—Fillers; Abrasives ; Abrasive compositions; Suspending or absorbing agents not provided for in one single group of C11D3/12; Specific features concerning abrasives, e.g. granulometry or mixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0004—Non aqueous liquid compositions comprising insoluble particles
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0013—Liquid compositions with insoluble particles in suspension
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Lubricants (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Liquid Crystal (AREA)
- Cleaning In General (AREA)
Abstract
提供清洁混合物、装置以及方法以从基片表面去除污染物。提供一种示范性的清洁混合物,以从半导体基片表面去除粒子污染物。该清洁混合物包括粘性流体,其粘度在大约1cP到大约10,000cP之间。该清洁混合物还包括分散在该粘性流体中的多个固体成分,该多个固体成分与该粒子基片表面上的污染物相互作用以从该基片表面去除该粒子污染物。
Description
背景技术
[1]在半导体器件如集成电路、存储器单元等的制造中,进行一系列的制造操作以在半导体基片(“基片”)上形成特征。在该系列制造操作期间,基片表面暴露于各种类型的污染物。实质上,在制造操作中存在的任何材料都是潜在的污染源。例如,污染源可包括,特别是,处理气体、化学制剂、沉积材料、蚀刻副产物以及液体。各种污染物会以粒子形式沉积在晶片表面(微粒)。
[2]必须把基片污染物从该半导体基片的表面清除掉。如果不去除,那么在污染附近的器件很可能不能工作。基片污染物还会影响器件的性能特性并导致比通常更快的速率发生器件实效。因此,需要将污染物从基片表面非常彻底的清除而不损伤基片表面以及限定在基片上的特征。粒子污染的大小往往处于在晶片上制造的特征的关键尺寸的量级。去除如此小的粒子污染而不负面影响表面以及基片上的特征是十分困难的。
[3]综上所述,需要一种改进的基片清洁技术以将污染物从基片表面去除,以提高器件产量。
发明内容
[4]一般来说,这些实施方式通过提供改进的基片清洁技术以从该基片表面去除污染物从而提高器件产量满足了这个需求。应当认识到本发明可以许多方式实现,包括作为溶液、方法、工艺、设备或系统。下面描述本发明多个创新性实施方式。
[5]在一个实施方式中,提供一种清洁混合物,以从半导体基片表面去除粒子污染物。该清洁混合物包括粘性流体,其粘度在大约1cP到大约10000cP之间。该清洁混合物还包括分散在该粘性流体中的多个固体成分,该多个固体成分与该基片表面上的粒子污染物相互作用以从该基片表面去除该粒子污染物。
[6]在另一个实施方式中,提供用于从基片的基片表面清除粒子污染物的设备。该设备包括用于把持该基片的基片支撑总成。该设备还包括施用器,以分配清洁混合物从而将该粒子污染物从该基片表面清除,其中该清洁混合物是一种粘性流体,其粘度在每秒1的剪切速率下为大约1cP到大约10000cP,以及多个固体成分分散在该粘性流体中。
[7]在又一个实施方式中,提供一种方法以从基片表面清除粒子污染物。该方法包括向该基片表面应用其中分散有固体成分的粘性流体。该方法还包括向该粘性流体施加具有向下分量和剪切分量的力以将至少一个固体成分带到基片表面上的粒子污染物的附近。该方法进一步包括将该至少一个固体成分以及该粒子污染物从该基片表面去除。
[8]本发明的这些和其他特征将在下面的具体描述中结合附图更详细地说明,作为示例说明本发明的原理。
附图说明
[9]通过下面结合附图的具体描述,将容易理解本发明,以及相似的参考标号指明相似的结构元件。
[10]图1A示出根据本发明一个实施方式的从基片表面去除粒子污染的清洁溶液的实体图。
[11]图1B示出非牛顿流体的应力和粘度图,它们是剪切速率的函数。
[12]图1C示出具有固体混合物的网格(network)和凝胶的清洁溶液的实体图。
[13]图1D示出图1A的清洁溶液的固体成分在基片表面上的污染物附近的实体图。
[14]图1E示出图1A的该清洁溶液的固体成分与基片表面上的污染物接触的实体图。
[15]图1F示出图1A该清洁溶液的固体成分将污染物从该基片表面去除的实体图。
[16]图2示出用于将粒子污染物从基片表面去除的工艺流程的实施方式。
[17]图3示出基片表面清洁系统的实施方式的示意图。
具体实施方式
[18]提供了多个改进基片清洁技术的示范性实施方式,该技术将粒子污染物从该基片去除以提高工艺产量。应当理解本发明可以许多方式来实现,包括作为溶液、工艺、方法、设备或系统。下面描述了本发明多个创新性的实施方式。对本领域的技术人员,显然可不采用这里阐述的某些或者全部具体细节来实施本发明。
[19]这里所描述的实施方式提供了一种清洁技术,其不需要有腐蚀作用的(abrasive)接触以及有效地从半导体基片清除污染物,这些半导体基片中的一些会包含高纵横比特征。尽管这些实施方式提供关于半导体清洁应用的具体示例,这些清洁应用可以扩展到任何需要从基片去除污染物的技术。如下面所描述的,提供的清洁溶液具有连续的液相以及分散的固相。固体微粒分散在整个液相中。
[20]图1A示出根据本发明一个实施方式,用于从半导体基片105的表面106去除污染物103的清洁溶液(或混合物)101的实体图。该清洁溶液101包括粘性流体107以及固体成分109。该固体成分109分散在该粘性流体107内。该粘性流体107提供一种媒介以将该固体成分109带到该污染物103附近,以便该固体成分109和该污染物103相互作用以最终从该基片表面106去除该污染物103。在一个实施方式中,该固体成分109被化学试剂或添加的表面活性剂水解。在一个实施方式中,可通过将羧酸固体以重量百分比大约2%溶解在去离子水(DIW)来准备该清洁溶液101。该固体混合物109是由溶解在DIW中的羧酸沉淀的羧酸固体。在一个实施方式中,该羧酸的碳原子数目≥4。溶解的羧酸所形成的粘性流体107的粘度为在每秒1的剪切速率下1cP(厘泊)到10000cP。一个要注意的事情是该清洁混合物(或者溶液)可通过将羧酸(或盐)混合在水之外的溶剂中而制得。也可使用别的极性或非极性溶剂,如酒精。
[21]该固体成分109悬浮分散在该粘性流体107中。在一个实施方式中,该粘性流体107是结合了固体成分109的网格的凝胶,从而形成该清洁混合物101,其可在该基片表面106上使用,如图1B所示。这些固体成分109彼此之间相互作用而通过范德华引力形成固体混合物的网格。该固体成分109悬浮在该粘性流体107内,该流体的形式为凝胶。该凝胶相对高的粘度允许施加在该凝胶上的力传递到该凝胶中的固体混合物上。该清洁混合物101,如图1B所示,可通过将更高浓度的该羧酸固体与DIW混合而形成,如大约3%到大约5%以及优选地在大约4%到大约5%。在一个实施方式中,该羧酸固体与DIW的混合物可加热到大约75℃至大约85℃以缩短这些固体在DIW中的溶解时间。一旦这些固体溶解,该清洁溶液就可以冷却。在冷却过程中,针状或片状的固体混合物将沉淀。
[22]在一个实施方式中,该粘性流体107是非牛顿流体,它的粘度随着剪切速率的增加而降低。然而,该粘性流体107可以是牛顿流体。图1C示出所描述实施方式的非牛顿流体的图表。当该剪切速率非常高时,粘度接近零。非牛顿流体的粘度随着剪切速率增加而降低。在清洁操作中,选择确定的剪切速率范围。举例来说,对于在DIW中具有重量3-4%的液体凝胶,其粘度在每秒0.1的剪切速率为大约1000cP,而当剪切速率增加到每秒1000时,粘度降低至大约10cP。
[23]如上所述,该粘性流体107的粘度为大约10cP到大约10000cp。当向该溶液101表面施加剪切力时,该粘性流体107可将部分剪切力传递到这些固体混合物109。这些固体混合物109会接触污染物103并将这些污染物从该基片表面移走。
[24]应当理解根据特定的实施方式,该清洁材料101内的固体成分109可具备基本上代表固相中任何雅态(sub-state)的物理属性,其中该固相定义为不同于流体或者气体的相。例如,该清洁材料101内不同类型的固体成分109之间,如弹性及塑性的物理属性可变化。另外,应当理解在各种不同的实施方式中,该固体成分109可限定为结晶固体或非结晶固体。不管它们的特定的物理属性怎样,当放置为极为贴近该基片表面106或者与该表面接触时,该清洁材料101内的固体成分109应当能够避免附着在基片表面106的表面上。另外,该固体成分109的机械属性应当不会导致在该清洁工艺器件损伤该基片表面106。在一个实施方式中,该固体成分109的硬度小于该基片表面106的硬度。
[25]此外,当放置为极为贴近该污染物103附近或者与之接触时,该固体成分109应当能够建立与存在于该基片表面106上的该污染物103的相互作用。例如,该固体成分109的大小和形状应当有利于建立该固体成分109与该污染物103之间的相互作用。在一个实施方式中,这些固体混合物109的横截面积大于该污染物的横截面积。如图1D所示,当与粒子污染物103'的表面积A103'相比,固体混合物109'具有较大的表面积A109'时,施加在该固体混合物109'上的剪切力Fs'传递至该粒子污染物103'的部分是剪切力粗略地乘以面积比(Fs'×A109'/A103')。例如,该粒子污染物103'的有效直径D小于大约0.1微米。该固体混合物109'的宽度W和长度L都在大约5微米到大约50微米之间,以及该固体混合物109'的厚度为大约1微米至大约5微米。该面积比(或力乘数)为2500到大约250,000或更大。施加在该粒子污染物103'上的剪切力可以非常大,并且可以将粒子污染物103'从该基片表面106移出。
[26]从该固体成分109'传递到该污染物103'的能量通过直接或者间接接触发生,并且会使得该污染物103'从该基片表面106移出。在这个实施方式中,该固体成分109'可以比该污染物103'更软或者更硬。如果该固体成分109'比该污染物103'软,在碰撞过程中该固体成分109'很可能发生更大的变形,导致用于将该污染物103'从该基片表面106移出的动能传递较少。在该固体成分109'比该污染物103'软的情况中,该固体成分109'以及该污染物103'之间的粘性连接会更强。相反,如果该固体成分109'至少与该污染物103'一样硬,该固体成分109'与该污染物103'会发生基本上彻底的能量传输,因此增加了该用作从该基片表面106移出该污染物103'的力。然而,在该固体成分109'至少与该污染物103'一样硬的情况中,依赖于该固体成分109'变形的相互作用力会减小。应当认识到与该固体成分109'和该污染物103'有关的物理属性以及相对粘度将影响它们之间的碰撞作用。
[27]图1E以及1F示出该清洁材料101如何用来从该基片表面106去除该污染物103的另一个实施方式。在该清洁工艺期间,向下的力FD,其是力F的向下的分量,施加在该粘性流体107内的该固体成分109,从而使得该固体成分109十分贴近或者接触该基片表面106上的该污染物103。该粘性流体107相对高的粘度使得在该粘性流体107上施加的该向下的力中很大部分施加到该固体成分109。当该固体成分109受到足以接近或者接触该污染物103的力时,在该固体成分109与该污染物103之间建立相互作用。该固体成分109与该污染物103之间的相互作用足以克服该污染物103与该基片表面106之间的粘结力,以及该固体成分109与该污染物之间任何排斥力。所以,当该固体成分109被剪切力Fs,移动远离该基片表面106时,该剪切力是力F的剪切分量,与该固体成分109相互作用的该污染物103也被移动远离该基片表面106,即,从该基片表面106清除该污染物103。在一个实施方式中,当该固体成分109受力足够接近该污染物103时,该固体成分109与污染物103之间产生相互作用。在一个实施方式中,这个距离在大约10纳米内。在另一个实施方式中,当该固体成分109实际接触该污染物103时,该固体成分109与污染物103之间产生相互作用。这个相互作用也可以指固体成分109啮合(engage)污染物103。
[28]该固体成分109与该污染物103之间的相互作用力比该连接该污染物103和该基片表面106的力大。图1F,示出当从该基片表面106移走固体成分109时,粘结到该固体成分109的该污染物103也从该基片表面106移走。应当注意的是在该清洁工艺期间可发生多个污染物去除机制。
[29]应当认识到因为该固体成分109与该污染物103之间的相互作用而影响该清洁工艺,整个该基片表面106的污染物103去除将依赖于该固体成分109在整个该基片表面106分布程度如何。在一个优选实施方式中,该固体成分109非常好的分布以至于实质上该基片表面106上每个污染物103都邻近至少一个固体成分109。还应当认识到一个固体成分109可与多于一个的污染物103同时或相继接触或者相互作用。此外,固体成分109可以是不同成分的混合物,与同一成分不同。因此,该清洁溶液可以为特定的目的而设计,即,将特定污染物作为目标,或者该清洁溶液具有广泛的目标污染物,其中提供多种固体成分。
[30]该固体成分109与该污染物103之间的相互作用可通过一种或多种机制建立,包括,特别是,粘结、碰撞以及引力。该固体成分109与污染物103之间的粘结可通过化学相互作用和/或物理相互作用而建立。例如,在一个实施方式中,化学相互作用导致该固体成分109与该污染物103之间出现类似胶合的效果。在另一个实施方式中,该固体成分109的机械属性促进该固体成分109与该污染物103之间的物理相互作用。例如,该固体成分109可以是韧性的,从而当压着该污染物103时,该污染物103压印(imprint)在该韧性固体成分109内。在另一个实施方式中,该污染物103可卷入固体成分109的网状物中。在这个实施方式中,机械应力可通过固体成分109的网状物传递到该污染物103,因此提供从该基片表面106去除污染物103所必需的机械力。
[31]由于该污染物103的压印导致的该固体成分109变形产生该固体成分109与该污染物103之间的机械连接。例如,该污染物的表面形貌103可以是这样的,即随着该污染物103被压入该固体成分109,该固体成分109材料的部分进入该污染物103的表面形貌内的区域,从而该固体成分109材料不会轻易逃脱,由此产生锁定机构。
[32]除了前面所述的,在一个实施方式中,该固体成分109与污染物103之间的相互作用可由静电引力产生。例如,如果该固体成分109以及该污染物103具有相反的表面电荷,它们将相互电力吸引。该固体成分109与该污染物103的静电引力足以克服连接该污染物103与该基片表面106的力是可能的。
[33]在另一个实施方式中,在该固体成分109与该污染物103之间存在静电排斥。例如,该固体成分109以及该污染物103都具有负的表面电荷或正的表面电荷。如果该固体成分109和该污染物103可以十分接近,可通过范德华引力克服它们之间的静电排斥。该通过该粘性流体107施加到该固体成分109的力可足以克服该静电排斥,从而在该固体成分109和该污染物103之间建立范德华引力。
[34]另外,在另一个实施方式中,可调节该粘性流体107的pH以补偿在该固体成分109和污染物103的一个或两个上存在的表面电荷,从而降低它们之间的该静电排斥以促进相互作用,或者以便该固体成分或者该污染物表现出相对另一个相反的表面电荷,产生静电引力。例如,碱,如氢氧化铵(NH4OH),可添加到羧酸凝胶,其通过在DIW溶解3-4%的羧酸而制得并具有脂肪酸固体成分,以增加该凝胶(粘性流体)的pH值。所添加的NH4OH的量在大约0.05%到大约5%,优选在大约0.25%到大约2%。氢氧化铵帮助该脂肪酸固体水解并分散在该凝胶中。氢氧化铵也可水解该污染物103。为了清除金属污染物,还可使用较低pH的溶液。可使用缓冲HF溶液以将该pH值调至大约6到大约8。
[35]除了使用如氢氧化铵的碱以增强清洁效率,表面活性剂(如十二烷基硫酸铵(ammonium dodecyl sulfate),CH3(CH2)11OSO3NH4)也可添加到该羧酸凝胶。在一个实施方式中,大约0.1%到大约5%的表面活性剂添加到该清洁溶液101。在一个优选实施方式中,大约0.5%到大约2%的表面活性剂添加到该清洁溶液101。
[36]另外,应当避免该固体成分109在该粘性流体107中溶解或者具有有限的溶解度,并且应当具有使之能够分散在整个粘性流体107中的表面功能。对于不具有使之能够分散在整个流体媒介107中的表面功能的固体成分109,化学分散剂可添加到该液体媒介107以使该固体成分109能够分散。取决于它们的具体化学特性以及它们与该围绕的粘性流体107的相互作用,固体成分109可采用一种或多种不同形式。例如,在各种不同的实施方式中,该固体成分109可形成聚集体、胶质体、凝胶、凝聚球体,或者实质上其他任何类型的聚集、凝结、絮凝、结块或聚并。在其他实施方式中,该固体成分109可具有在这里没有特别指出的形式。所以,需要理解一点,该固体成分109可以限定为实质上任何固体材料,只要其能够以先前描述的、关于它们与该基片表面106以及该污染物103的相互作用的方式起作用。
[37]一些示范性的固体成分109包括脂族酸、羧酸、石蜡、纤维素、蜡、聚合物、聚苯乙烯、多肽、以及其他粘弹性材料。该固体成分109材料存在的浓度应当超过其在该粘性流体107中的溶解度限制。另外,应当理解与特定固体成分109材料有关的清洁效果可作为温度、pH以及其他环境条件的函数而变化。
[38]该脂族酸基本上代表了任何由有机化合物形成的酸,其中碳原子形成开放的链。脂肪酸是脂族酸的一个例子也是羧酸的一个例子,其可用作该清洁材料101内的该固体成分109。可用作该固体成分109的脂肪酸的例子包括,特别是,月桂酸、棕榈酸、硬脂酸、油酸、亚油酸、亚麻酸、花生四烯酸、顺9-二十碳烯酸、芥酸、丁酸、己酸、辛酸、豆蔻酸、十七酸、二十二(碳)烷酸、lignoseric酸、9-十四烯酸、棕榈油酸、神经(nervanic)酸、十八碳四烯酸、二十碳五烯酸、巴西烯酸、鱼酸、二十四(烷)酸、蜡酸及其混合物。在一个实施方式中,该固体成分109可代表由各种碳链(从C4延伸到大约C-26)形成的脂肪酸的混合物。羧酸基本上由任何包括一个或多个羧基(COOH)的有机酸形成。并且,该羧酸可包括其他功能基团,如,但不限于甲基、乙烯基、炔,酰胺,伯胺,仲胺,叔胺,偶氨基,腈,硝基,亚硝基,吡啶基,羧基,过氧基,醛,酮,伯亚胺,仲亚胺,醚,酯,卤素异氰酸酯,异硫氰酸盐,苯基,苯甲基,磷酸二酯,氢硫基,但是仍保持不溶于该粘性流体107。
[39]另外,该固体成分109材料的表面功能会受到其易溶于该粘性流体107的那部分成分的影响,如羧酸盐、磷酸盐、硫酸根基团、多羟基基团、环氧乙烷等。需要理解一点,该固体成分109应当大体上均匀地分散在整个该粘性流体107中从而避免该固体成分109结在一起而变成不能使其与该基片105上存在的污染物103相互作用的形式。
[40]应当理解该粘性流体107可修改为包括离子或非离子溶剂以及气体化学添加剂。例如,用于该粘性流体107的化学添加剂可包括辅助溶剂、pH调节剂、螯合剂、极性溶剂、表面活性剂、氢氧化铵、过氧化氢、氢氟酸、羟化四甲铵,以及流变改性剂,如聚合物、微利以及多肽。
[41]图2示出根据本发明一个实施方式,从基片表面去除污染物的方法的流程图。应当理解在图2的方法中涉及的基片可表示半导体晶片或任何其他类型的基片,需要从其上去除与制造工艺有关的污染物。并且,在图2的方法中涉及的污染物实质上可表示与该半导体晶片制造工艺有关的任何类型的表面污染物,包括但不限于离子污染、微量金属污染、有机污染、光刻胶碎片、来自晶片处理设备的污染以及晶片背面离子污染。
[42]图2的方法包括操作201,用于将清洁材料(或溶液)设在基片上,其中该清洁材料包括分散在粘性流体或者凝胶内的固体成分。图2的方法中涉及的清洁材料与之前关于图1A-1F描述的相同。所以,该清洁材料内的固体成分悬浮分散在该粘性流体内。并且,该固体成分限定为避免损伤该基片以及避免附着在该基片表面。
[43]该方法还包括操作203,用于向固体成分施加力以将该固体成分带到该基片上存在的污染物附近,从而在该固体成分和该污染物之间建立相互作用。
[44]另外,在一个实施方式中,该方法可包括用于控制该清洁材料温度的操作以增强在该固体成分和该污染物之间的相互作用。更具体地,可控制该清洁材料的温度以控制该固体成分的属性。例如,在较高的温度,该固体成分韧性更好从而当压到污染物时其更加吻合。然后,一旦该固体成分受压并与该污染物吻合,就降低温度使得该固体成分韧性较差以更好的保持其相对于该污染物的共形形状,因此有效地将该固体成分以及污染物卡在一起。温度可以用来控制该粘性流体的粘度。温度还可用来控制该固体成分的溶解度以及由此可控制浓度。例如,在较高的温度下,该固体成分更可能在该粘性流体溶解。温度还可用来控制和/或使固体成分能够从液体-液体悬浮液在该基片上原地形成。在一个不同的实施方式中,该方法可包括用于沉淀溶解在该粘性流体中的固体的操作。这个沉淀操作可通过将这些固体溶解在溶剂中,然后添加易溶于该溶剂但不能溶解该固体的成分来实现。
[45]该方法进一步包括操作205,用于将该固体成分从该基片表面移走,从而将与该固体成分相互作用的污染物从该基片表面去除。在一个实施方式中,该方法包括用于控制该清洁材料在该基片上的流率以控制或增强从该基片移走该固体成分和/或污染物的操作。本发明的用于从基片去除污染的方法可以许多不同的方式来实现,只要包含这样的手段,即向该清洁材料的固体成分施加力,从而该固体成分与待去除该污染物建立相互作用。
[46]在一个实施方式中,该方法可包括最后清洁的操作。在该最后清洁操作中,利用适合的化学制剂清除包含去除的污染物的基片清洁材料,该化学制剂帮助从该基片表面去除全部的清洁材料。例如,如果该清洁材料的粘性流体是羧酸凝胶,在DIW中稀释的NH4OH可用来从该基片表面去除羧酸。NH4OH水解(或者通过去离子化电离)该羧酸并使该水解的羧酸离开该基片表面。或者,表面活性剂(如十二烷基硫酸铵(ammonium dodecyl sulfate),CH3(CH2)11OSO3NH4)可添加到DIW,以从该基片表面去除羧酸凝胶。
[47]在另一个实施方式中,冲洗操作接着上面描述的该最后清洁操作。在该最后清洁之后,可利用液体(如DIW)冲洗该基片表面以从该基片表面去除用在该最后清洁中的化学制剂。用在最后冲洗中的液体应当在其蒸发后在该基片表面不留下化学制剂残留。
[48]图3示出基片表面清洁系统300的实施方式的示意图。系统300具有安装基片支撑总成304的容器307。该基片支撑总成304具有基片夹305,其支撑基片301。该基片支撑总成304由转动机构310转动。系统300具有清洁材料分配总成303,其包括清洁材料施用器(applicator)306。在该施用器306中有多个分配孔308,其允许将该清洁材料分配在基片301表面上。在该转动机构310的帮助下,该清洁材料307覆盖整个基片表面。在一个实施方式中,该施用器306通过提供分配该清洁材料的活动而向清洁材料以及该基片表面提供向下的力。可通过空气压力或机械泵将该清洁材料压出该施用器306。在另一个实施方式中,该施用器306通过向下的机械力而在该基片表面上的清洁材料上提供向下的力。该转动机构310向该清洁材料以及该基片表面提供剪切力。在一个实施方式中,该转动机构310的转速为大约每分钟1转(RPM)到大约100RPM,优选地大约5RPM到大约30RPM。施加到该清洁材料(或者混合物)上以将该清洁材料推出该施用器306的压力为大约5PSI到大约20PSI。或者,该施用器306可围绕该基片301的中心转动以提供剪切力。
[49]在一个实施方式中,系统300还包括分配器320,其可在该基片表面上分配DIW 321,以在通过该清洁材料去除污染物的工艺完成后,清洁带有清洁材料的基片表面。在另一个实施方式中,该分配器320可将清洁溶液,如上面描述的溶于DIW的NH4OH,分配在该基片表面上以水解该粘性流体,从而使得该粘性流体能够离开该基片表面。之后,同一分配器320或另一分配器(未示)可分配DIW以从该基片表面去除该清洁溶液。
[50]尽管本发明依照多个实施方式描述,但是可以理解,本领域的技术人员在阅读之前的说明书以及研究了附图之后将会实现各种改变、增加、置换及其等同方式。所以,其意图是下面所附的权利要求解释为包括所有这样的落入本发明主旨和范围内的改变、增加、置换和等同物。在这些权利要求里,除非在这些权利要求中明确的声明,元件和/或步骤并不意指任何特定的操作顺序。
Claims (24)
1.一种从半导体基片表面去除粒子污染物的清洁混合物,包括:
粘性流体,其粘度在大约1cP到大约10,000cP之间;以及
多个固体成分,分散在该粘性流体中,该多个固体成分与该基片表面上的粒子污染物相互作用以从该基片表面去除该粒子污染物。
2.根据权利要求1所述的清洁混合物,其中该粘性流体是羧酸凝胶,通过将大约2%到大约5%的羧酸溶解在去离子水中制得。
3.根据权利要求1所述的清洁混合物,其中该多个固体成分是碳原子数目大于4的脂肪酸。
4.根据权利要求3所述的清洁混合物,其中该脂肪酸选自月桂酸、棕榈酸、硬脂酸、油酸、亚油酸、亚麻酸、花生四烯酸、顺9-二十碳烯酸、酪酸、丁酸、己酸、辛酸、豆蔻酸、十七酸、二十二(碳)烷酸、lignoseric酸、9-十四烯酸、棕榈油酸、神经酸、十八碳四烯酸、二十碳五烯酸、巴西烯酸、鰶鱼酸及其混合物。
5.根据权利要求1所述的清洁混合物,其中该多个固体成分的宽度及长度为大约5微米到大约50微米。
6.根据权利要求1所述的清洁混合物,其中该多个固体成分的每个的直径小于0.1微米。
7.根据权利要求1所述的清洁混合物,其中该粘性流体的pH值为大约10到大约11。
8.根据权利要求7所述的清洁混合物,其中通过向该粘性流体添加氢氧化铵来调节pH。
9.根据权利要求1所述的清洁混合物,进一步包括表面活性剂以帮助分散该多个固体成分。
10.根据权利要求9所述的清洁混合物,其中该表面活性剂是十二烷硫酸铵。
11.根据权利要求1所述的清洁混合物,其中该粘性流体是凝胶。
12.一种用于从基片的基片表面去除粒子污染物的设备,包括:
基片支撑总成,用于把持该基片;以及
施用器,用于分配清洁混合物以从该基片表面清除该粒子污染物,其中该清洁混合物是粘性流体,其粘度为大约1cP到大约10000cP,并且多个固体成分分散在该粘性流体中。
13.根据权利要求12所述的设备,其中该基片支撑总成由转动机构转动。
14.根据权利要求12所述的设备,其中该施用器围绕该基片的中心转动。
15.根据权利要求12所述的设备,该施用器通过使用空气压力或者机械泵在该施用器下面的清洁混合物上施加向下的力以分配该清洁混合物。
16.根据权利要求12所述的设备,进一步包括清洁流体分配头,由该清洁流体分配头分配清洁流体以从该基片表面去除该清洁材料。
17.根据权利要求12所述的设备,其中该粘性流体是凝胶。
18.一种从基片表面清除粒子污染物的方法,包括:
向该基片表面应用其中分散有固体成分的粘性流体;
向该粘性流体施加具有向下分量和剪切分量的力以将至少一个固体成分带到基片表面上的粒子污染物的附近;以及
将该至少一个固体成分以及该粒子污染物从该基片表面去除。
19.根据权利要求18所述的方法,其中该粘性流体的粘度为大约1cP至大约10000cP。
20.根据权利要求18所述的方法,其中在该至少一个固体成分与该粒子污染物之间建立相互作用。
21.根据权利要求18所述的方法,其中该粘性流体是非牛顿流体,其粘度随着剪切应力而减小。
22.根据权利要求18所述的方法,其中该粘性流体是凝胶。
23.根据权利要求18所述的方法,进一步包括:
通过应用水解该粘性流体的清洁溶液而将该粘性流体从该基片表面去除,其中该清洁溶液具有增加该粘性流体溶解度的化学试剂。
24.根据权利要求23所述的方法,进一步包括:
通过应用去离子水以从该基片表面去除该清洁溶液而将该清洁溶液从该基片表面去除。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75537705P | 2005-12-30 | 2005-12-30 | |
US60/755,377 | 2005-12-30 | ||
US11/519,354 US7799141B2 (en) | 2003-06-27 | 2006-09-11 | Method and system for using a two-phases substrate cleaning compound |
US11/519,354 | 2006-09-11 | ||
PCT/US2006/048706 WO2007078975A2 (en) | 2005-12-30 | 2006-12-19 | Method and system for using a two-phases substrate cleaning compound |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101370885A true CN101370885A (zh) | 2009-02-18 |
CN101370885B CN101370885B (zh) | 2013-04-17 |
Family
ID=38228775
Family Applications (10)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800500241A Expired - Fee Related CN101351282B (zh) | 2005-12-30 | 2006-12-08 | 从基片去除污染的方法和设备 |
CNA2006800500345A Pending CN101351540A (zh) | 2005-12-30 | 2006-12-18 | 使用稳定流体溶液的基片制备和制造稳定流体溶液的方法 |
CN2006800499545A Expired - Fee Related CN101351281B (zh) | 2005-12-30 | 2006-12-18 | 去除微粒的方法和设备 |
CN2006800489399A Expired - Fee Related CN101370885B (zh) | 2005-12-30 | 2006-12-19 | 使用双相基片清洗混合物的方法和系统 |
CN200680050094.7A Expired - Fee Related CN101512049B (zh) | 2005-12-30 | 2006-12-21 | 用于清洁半导体基片的方法和设备 |
CN2006800534252A Expired - Fee Related CN101389414B (zh) | 2005-12-30 | 2006-12-26 | 清洁半导体基片的方法和装置 |
CNA2006100639487A Pending CN101114569A (zh) | 2005-12-30 | 2006-12-29 | 用于清洁衬底的方法和材料 |
CN2006101717515A Expired - Fee Related CN101009204B (zh) | 2005-12-30 | 2006-12-29 | 用于清洁衬底的装置和系统 |
CN2006101724970A Expired - Fee Related CN101034670B (zh) | 2005-12-30 | 2006-12-30 | 从衬底上除去杂质的方法以及制备清洗液的方法 |
CN200610172498.5A Expired - Fee Related CN101029289B (zh) | 2005-12-30 | 2006-12-30 | 清洗组合物和使用该清洗组合物的方法和系统 |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800500241A Expired - Fee Related CN101351282B (zh) | 2005-12-30 | 2006-12-08 | 从基片去除污染的方法和设备 |
CNA2006800500345A Pending CN101351540A (zh) | 2005-12-30 | 2006-12-18 | 使用稳定流体溶液的基片制备和制造稳定流体溶液的方法 |
CN2006800499545A Expired - Fee Related CN101351281B (zh) | 2005-12-30 | 2006-12-18 | 去除微粒的方法和设备 |
Family Applications After (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200680050094.7A Expired - Fee Related CN101512049B (zh) | 2005-12-30 | 2006-12-21 | 用于清洁半导体基片的方法和设备 |
CN2006800534252A Expired - Fee Related CN101389414B (zh) | 2005-12-30 | 2006-12-26 | 清洁半导体基片的方法和装置 |
CNA2006100639487A Pending CN101114569A (zh) | 2005-12-30 | 2006-12-29 | 用于清洁衬底的方法和材料 |
CN2006101717515A Expired - Fee Related CN101009204B (zh) | 2005-12-30 | 2006-12-29 | 用于清洁衬底的装置和系统 |
CN2006101724970A Expired - Fee Related CN101034670B (zh) | 2005-12-30 | 2006-12-30 | 从衬底上除去杂质的方法以及制备清洗液的方法 |
CN200610172498.5A Expired - Fee Related CN101029289B (zh) | 2005-12-30 | 2006-12-30 | 清洗组合物和使用该清洗组合物的方法和系统 |
Country Status (9)
Country | Link |
---|---|
US (2) | US8475599B2 (zh) |
EP (2) | EP2428557A1 (zh) |
JP (4) | JP4892565B2 (zh) |
KR (4) | KR101426777B1 (zh) |
CN (10) | CN101351282B (zh) |
MY (2) | MY149848A (zh) |
SG (2) | SG154438A1 (zh) |
TW (3) | TWI330551B (zh) |
WO (1) | WO2007078955A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130164925A1 (en) * | 2011-12-22 | 2013-06-27 | Duk Eui LEE | Method of manufacturing semiconductor memory device |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US8388762B2 (en) * | 2007-05-02 | 2013-03-05 | Lam Research Corporation | Substrate cleaning technique employing multi-phase solution |
WO2009076233A1 (en) * | 2007-12-07 | 2009-06-18 | Fontana Technology | Particle removal cleaning method and composition |
US8084406B2 (en) * | 2007-12-14 | 2011-12-27 | Lam Research Corporation | Apparatus for particle removal by single-phase and two-phase media |
US8828145B2 (en) * | 2009-03-10 | 2014-09-09 | Lam Research Corporation | Method of particle contaminant removal |
US9159593B2 (en) | 2008-06-02 | 2015-10-13 | Lam Research Corporation | Method of particle contaminant removal |
US8105997B2 (en) * | 2008-11-07 | 2012-01-31 | Lam Research Corporation | Composition and application of a two-phase contaminant removal medium |
US8739805B2 (en) * | 2008-11-26 | 2014-06-03 | Lam Research Corporation | Confinement of foam delivered by a proximity head |
US8317934B2 (en) * | 2009-05-13 | 2012-11-27 | Lam Research Corporation | Multi-stage substrate cleaning method and apparatus |
US8251223B2 (en) * | 2010-02-08 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning system and a package carrier for a semiconductor package |
US8595929B2 (en) * | 2010-10-21 | 2013-12-03 | Siemens Energy, Inc. | Repair of a turbine engine surface containing crevices |
CN102569013A (zh) * | 2010-12-17 | 2012-07-11 | 朗姆研究公司 | 用于检测晶片应力的系统和方法 |
CN102315098B (zh) * | 2011-09-28 | 2016-03-30 | 上海华虹宏力半导体制造有限公司 | 清洗半导体基底和形成栅介质层的方法 |
CN103987664B (zh) | 2011-12-06 | 2017-03-08 | 德尔塔阀门公司 | 龙头中的臭氧分配 |
CN102744227A (zh) * | 2012-07-16 | 2012-10-24 | 安徽未来表面技术有限公司 | 一种用于太阳能发电装置上的硅片清洗方法 |
WO2015004535A2 (en) * | 2013-07-05 | 2015-01-15 | King Abdullah University Of Science And Technology | System and method for conveying an assembly |
CN103406322A (zh) * | 2013-07-22 | 2013-11-27 | 彩虹显示器件股份有限公司 | 一种用于清洗基板玻璃的装置及方法 |
US10767143B2 (en) | 2014-03-06 | 2020-09-08 | Sage Electrochromics, Inc. | Particle removal from electrochromic films using non-aqueous fluids |
DE102014206875A1 (de) * | 2014-04-09 | 2015-10-15 | Wacker Chemie Ag | Verfahren zur Reinigung von technischen Anlagenteilen von Metallhalogeniden |
US10753011B2 (en) | 2014-09-11 | 2020-08-25 | Tokuyama Corporation | Cleaning method and laminate of aluminum nitride single-crystal substrate |
US11458214B2 (en) | 2015-12-21 | 2022-10-04 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
CN106111610B (zh) * | 2016-06-26 | 2018-07-17 | 河南盛达光伏科技有限公司 | 单晶硅线切割碎片表面附着性脏污预清洗处理方法 |
KR101955597B1 (ko) * | 2017-05-17 | 2019-05-31 | 세메스 주식회사 | 세정액 제조 장치 및 방법 |
KR102341398B1 (ko) | 2018-01-18 | 2021-12-17 | 가부시키가이샤 아이에이치아이 | 라이닝재 박리 방법 |
GB2574179B (en) * | 2018-03-12 | 2021-06-30 | Illinois Tool Works | Contact cleaning surface assembly |
KR102072581B1 (ko) | 2018-05-04 | 2020-02-03 | 세메스 주식회사 | 기판 처리방법 및 처리장치 |
JP7227758B2 (ja) | 2018-05-31 | 2023-02-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7227757B2 (ja) * | 2018-05-31 | 2023-02-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN110883017B (zh) * | 2018-09-10 | 2020-12-29 | 北京石墨烯研究院 | 静态清洁石墨烯表面的方法和装置 |
CN110591832A (zh) * | 2019-09-26 | 2019-12-20 | 嘉兴瑞智光能科技有限公司 | 一种高效环保无污染硅片清洗剂及其制备方法 |
KR102281885B1 (ko) | 2019-11-06 | 2021-07-27 | 세메스 주식회사 | 기판 세정 방법 및 기판 처리 장치 |
Family Cites Families (169)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL251243A (zh) * | 1959-05-04 | |||
US3212762A (en) * | 1960-05-23 | 1965-10-19 | Dow Chemical Co | Foam generator |
US3360476A (en) * | 1964-03-19 | 1967-12-26 | Fmc Corp | Liquid heavy duty cleaner and disinfectant |
US3436262A (en) * | 1964-09-25 | 1969-04-01 | Dow Chemical Co | Cleaning by foam contact,and foam regeneration method |
US3617095A (en) | 1967-10-18 | 1971-11-02 | Petrolite Corp | Method of transporting bulk solids |
GB1427341A (en) * | 1972-05-22 | 1976-03-10 | Unilever Ltd | Liquid soap product |
US3978176A (en) * | 1972-09-05 | 1976-08-31 | Minnesota Mining And Manufacturing Company | Sparger |
GB1507472A (en) * | 1974-05-02 | 1978-04-12 | Bunker Ramo | Foamable coating remover composition |
GB1447435A (en) * | 1974-06-03 | 1976-08-25 | Ferrara P J Barnes C A Gordon | Soap composition and process of producing such |
US4156619A (en) * | 1975-06-11 | 1979-05-29 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for cleaning semi-conductor discs |
US4133773A (en) * | 1977-07-28 | 1979-01-09 | The Dow Chemical Company | Apparatus for making foamed cleaning solutions and method of operation |
DE2823002B2 (de) * | 1978-05-26 | 1981-06-04 | Chemische Werke München Otto Bärlocher GmbH, 8000 München | Verfahren zur Herstellung von Metallseifengranulat |
US4238244A (en) | 1978-10-10 | 1980-12-09 | Halliburton Company | Method of removing deposits from surfaces with a gas agitated cleaning liquid |
US4387040A (en) * | 1981-09-30 | 1983-06-07 | Colgate-Palmolive Company | Liquid toilet soap |
US4838289A (en) * | 1982-08-03 | 1989-06-13 | Texas Instruments Incorporated | Apparatus and method for edge cleaning |
US4911761A (en) * | 1984-05-21 | 1990-03-27 | Cfm Technologies Research Associates | Process and apparatus for drying surfaces |
DE3760569D1 (en) * | 1986-07-08 | 1989-10-26 | Kohlensaeurewerk Deutschland | A process for drying of plant or animal substances |
NL8601939A (nl) | 1986-07-28 | 1988-02-16 | Philips Nv | Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat. |
US4817652A (en) * | 1987-03-26 | 1989-04-04 | Regents Of The University Of Minnesota | System for surface and fluid cleaning |
US4962776A (en) * | 1987-03-26 | 1990-10-16 | Regents Of The University Of Minnesota | Process for surface and fluid cleaning |
US4849027A (en) * | 1987-04-16 | 1989-07-18 | Simmons Bobby G | Method for recycling foamed solvents |
US4753747A (en) * | 1987-05-12 | 1988-06-28 | Colgate-Palmolive Co. | Process of neutralizing mono-carboxylic acid |
US5105556A (en) * | 1987-08-12 | 1992-04-21 | Hitachi, Ltd. | Vapor washing process and apparatus |
US4867896A (en) * | 1988-02-17 | 1989-09-19 | Lever Brothers Company | Cleaning compositions containing cross-linked polymeric thickeners and hypochlorite bleach |
US5048549A (en) * | 1988-03-02 | 1991-09-17 | General Dynamics Corp., Air Defense Systems Div. | Apparatus for cleaning and/or fluxing circuit card assemblies |
US5181985A (en) * | 1988-06-01 | 1993-01-26 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the wet-chemical surface treatment of semiconductor wafers |
US5000795A (en) * | 1989-06-16 | 1991-03-19 | At&T Bell Laboratories | Semiconductor wafer cleaning method and apparatus |
US5102777A (en) * | 1990-02-01 | 1992-04-07 | Ardrox Inc. | Resist stripping |
US5271774A (en) | 1990-03-01 | 1993-12-21 | U.S. Philips Corporation | Method for removing in a centrifuge a liquid from a surface of a substrate |
EP0445728B1 (en) * | 1990-03-07 | 1994-06-08 | Hitachi, Ltd. | Apparatus and method for cleaning solid surface |
DE4038587A1 (de) | 1990-12-04 | 1992-06-11 | Hamatech Halbleiter Maschinenb | Transportvorrichtung fuer substrate |
US5306350A (en) * | 1990-12-21 | 1994-04-26 | Union Carbide Chemicals & Plastics Technology Corporation | Methods for cleaning apparatus using compressed fluids |
US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
US5147574A (en) * | 1991-03-05 | 1992-09-15 | The Procter & Gamble Company | Stable liquid soap personal cleanser |
US5175124A (en) | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
US5242669A (en) * | 1992-07-09 | 1993-09-07 | The S. A. Day Mfg. Co., Inc. | High purity potassium tetrafluoroaluminate and method of making same |
US5288332A (en) * | 1993-02-05 | 1994-02-22 | Honeywell Inc. | A process for removing corrosive by-products from a circuit assembly |
US5336371A (en) * | 1993-03-18 | 1994-08-09 | At&T Bell Laboratories | Semiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflow |
US5464480A (en) | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
US5911837A (en) * | 1993-07-16 | 1999-06-15 | Legacy Systems, Inc. | Process for treatment of semiconductor wafers in a fluid |
US5472502A (en) | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
US5950645A (en) | 1993-10-20 | 1999-09-14 | Verteq, Inc. | Semiconductor wafer cleaning system |
US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
US5518542A (en) * | 1993-11-05 | 1996-05-21 | Tokyo Electron Limited | Double-sided substrate cleaning apparatus |
US5938504A (en) * | 1993-11-16 | 1999-08-17 | Applied Materials, Inc. | Substrate polishing apparatus |
US5417768A (en) * | 1993-12-14 | 1995-05-23 | Autoclave Engineers, Inc. | Method of cleaning workpiece with solvent and then with liquid carbon dioxide |
JP3380021B2 (ja) * | 1993-12-28 | 2003-02-24 | 株式会社エフティーエル | 洗浄方法 |
CA2170501C (en) * | 1993-12-30 | 2008-01-29 | Rhonda Kay Schulz | Method of making urea-based solid cleaning compositions |
DE69523208T2 (de) * | 1994-04-08 | 2002-06-27 | Texas Instruments Inc | Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase |
US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
US6081650A (en) * | 1994-06-30 | 2000-06-27 | Thomson Licensing S.A. | Transport processor interface and video recorder/playback apparatus in a field structured datastream suitable for conveying television information |
US5705223A (en) * | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
US5772784A (en) | 1994-11-14 | 1998-06-30 | Yieldup International | Ultra-low particle semiconductor cleaner |
US5660642A (en) * | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
JP3504023B2 (ja) * | 1995-05-26 | 2004-03-08 | 株式会社ルネサステクノロジ | 洗浄装置および洗浄方法 |
US6035483A (en) * | 1995-06-07 | 2000-03-14 | Baldwin Graphic Systems, Inc. | Cleaning system and process for making and using same employing a highly viscous solvent |
US5964958A (en) | 1995-06-07 | 1999-10-12 | Gary W. Ferrell | Methods for drying and cleaning objects using aerosols |
US5968285A (en) | 1995-06-07 | 1999-10-19 | Gary W. Ferrell | Methods for drying and cleaning of objects using aerosols and inert gases |
US6532976B1 (en) * | 1995-07-10 | 2003-03-18 | Lg Semicon Co., Ltd. | Semiconductor wafer cleaning apparatus |
JP3590470B2 (ja) * | 1996-03-27 | 2004-11-17 | アルプス電気株式会社 | 洗浄水生成方法および洗浄方法ならびに洗浄水生成装置および洗浄装置 |
DE19622015A1 (de) * | 1996-05-31 | 1997-12-04 | Siemens Ag | Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage |
TW416987B (en) * | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
JP3350627B2 (ja) * | 1996-07-03 | 2002-11-25 | 宮崎沖電気株式会社 | 半導体素子の異物除去方法及びその装置 |
DE19631363C1 (de) * | 1996-08-02 | 1998-02-12 | Siemens Ag | Wässrige Reinigungslösung für ein Halbleitersubstrat |
JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
WO1998013149A1 (fr) * | 1996-09-25 | 1998-04-02 | Shuzurifuresher Kaihatsukyodokumiai | Systeme de lavage utilisant un gaz liquefie de haute densite |
TW357406B (en) | 1996-10-07 | 1999-05-01 | Tokyo Electron Ltd | Method and apparatus for cleaning and drying a substrate |
JP3286539B2 (ja) * | 1996-10-30 | 2002-05-27 | 信越半導体株式会社 | 洗浄装置および洗浄方法 |
US5858283A (en) * | 1996-11-18 | 1999-01-12 | Burris; William Alan | Sparger |
US5906021A (en) * | 1996-12-06 | 1999-05-25 | Coffey; Daniel | Fluid-wetted or submerged surface cleaning apparatus |
US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US5900191A (en) * | 1997-01-14 | 1999-05-04 | Stable Air, Inc. | Foam producing apparatus and method |
US5800626A (en) * | 1997-02-18 | 1998-09-01 | International Business Machines Corporation | Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates |
US20020157686A1 (en) * | 1997-05-09 | 2002-10-31 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
JPH10321572A (ja) * | 1997-05-15 | 1998-12-04 | Toshiba Corp | 半導体ウェーハの両面洗浄装置及び半導体ウェーハのポリッシング方法 |
JPH1126423A (ja) * | 1997-07-09 | 1999-01-29 | Sugai:Kk | 半導体ウエハ等の処理方法並びにその処理装置 |
US6152805A (en) | 1997-07-17 | 2000-11-28 | Canon Kabushiki Kaisha | Polishing machine |
US5932493A (en) * | 1997-09-15 | 1999-08-03 | International Business Machines Corporaiton | Method to minimize watermarks on silicon substrates |
US6491764B2 (en) | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
EP0905746A1 (en) | 1997-09-24 | 1999-03-31 | Interuniversitair Micro-Elektronica Centrum Vzw | Method of removing a liquid from a surface of a rotating substrate |
US5904156A (en) * | 1997-09-24 | 1999-05-18 | International Business Machines Corporation | Dry film resist removal in the presence of electroplated C4's |
US6398975B1 (en) * | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
US5807439A (en) * | 1997-09-29 | 1998-09-15 | Siemens Aktiengesellschaft | Apparatus and method for improved washing and drying of semiconductor wafers |
JP3039493B2 (ja) * | 1997-11-28 | 2000-05-08 | 日本電気株式会社 | 基板の洗浄方法及び洗浄溶液 |
US6270584B1 (en) * | 1997-12-03 | 2001-08-07 | Gary W. Ferrell | Apparatus for drying and cleaning objects using controlled aerosols and gases |
US5865901A (en) * | 1997-12-29 | 1999-02-02 | Siemens Aktiengesellschaft | Wafer surface cleaning apparatus and method |
US6042885A (en) * | 1998-04-17 | 2000-03-28 | Abitec Corporation | System and method for dispensing a gel |
US6049996A (en) * | 1998-07-10 | 2000-04-18 | Ball Semiconductor, Inc. | Device and fluid separator for processing spherical shaped devices |
US5944581A (en) * | 1998-07-13 | 1999-08-31 | Ford Motor Company | CO2 cleaning system and method |
JP3003684B1 (ja) * | 1998-09-07 | 2000-01-31 | 日本電気株式会社 | 基板洗浄方法および基板洗浄液 |
JP2000100801A (ja) | 1998-09-25 | 2000-04-07 | Sumitomo Electric Ind Ltd | エピタキシャルウェハおよびその製造方法ならびにそれに用いられる化合物半導体基板の表面清浄化方法 |
JP2000141215A (ja) * | 1998-11-05 | 2000-05-23 | Sony Corp | 平坦化研磨装置及び平坦化研磨方法 |
JP2000265945A (ja) * | 1998-11-10 | 2000-09-26 | Uct Kk | 薬液供給ポンプ、薬液供給装置、薬液供給システム、基板洗浄装置、薬液供給方法、及び基板洗浄方法 |
US6090217A (en) * | 1998-12-09 | 2000-07-18 | Kittle; Paul A. | Surface treatment of semiconductor substrates |
JP2000260739A (ja) * | 1999-03-11 | 2000-09-22 | Kokusai Electric Co Ltd | 基板処理装置および基板処理方法 |
US6290780B1 (en) * | 1999-03-19 | 2001-09-18 | Lam Research Corporation | Method and apparatus for processing a wafer |
US6849581B1 (en) * | 1999-03-30 | 2005-02-01 | Bj Services Company | Gelled hydrocarbon compositions and methods for use thereof |
US6272712B1 (en) * | 1999-04-02 | 2001-08-14 | Lam Research Corporation | Brush box containment apparatus |
JP3624116B2 (ja) * | 1999-04-15 | 2005-03-02 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP4247587B2 (ja) | 1999-06-23 | 2009-04-02 | Jsr株式会社 | 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法 |
FR2795960B1 (fr) * | 1999-07-05 | 2001-10-19 | Sanofi Elf | Microemulsions stables pour l'administration d'acides gras a l'homme ou a l'animal, et utilisation de ces microemulsions |
US20020121290A1 (en) * | 1999-08-25 | 2002-09-05 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
US6734121B2 (en) * | 1999-09-02 | 2004-05-11 | Micron Technology, Inc. | Methods of treating surfaces of substrates |
US6228563B1 (en) * | 1999-09-17 | 2001-05-08 | Gasonics International Corporation | Method and apparatus for removing post-etch residues and other adherent matrices |
US7122126B1 (en) | 2000-09-28 | 2006-10-17 | Materials And Technologies Corporation | Wet processing using a fluid meniscus, apparatus and method |
US6858089B2 (en) * | 1999-10-29 | 2005-02-22 | Paul P. Castrucci | Apparatus and method for semiconductor wafer cleaning |
US6881687B1 (en) * | 1999-10-29 | 2005-04-19 | Paul P. Castrucci | Method for laser cleaning of a substrate surface using a solid sacrificial film |
US6576066B1 (en) * | 1999-12-06 | 2003-06-10 | Nippon Telegraph And Telephone Corporation | Supercritical drying method and supercritical drying apparatus |
US20020006767A1 (en) | 1999-12-22 | 2002-01-17 | Applied Materials, Inc. | Ion exchange pad or brush and method of regenerating the same |
US6286231B1 (en) * | 2000-01-12 | 2001-09-11 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
US6705930B2 (en) * | 2000-01-28 | 2004-03-16 | Lam Research Corporation | System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques |
US6276459B1 (en) * | 2000-02-01 | 2001-08-21 | Bradford James Herrick | Compressed air foam generator |
US6594847B1 (en) * | 2000-03-28 | 2003-07-22 | Lam Research Corporation | Single wafer residue, thin film removal and clean |
US6457199B1 (en) | 2000-10-12 | 2002-10-01 | Lam Research Corporation | Substrate processing in an immersion, scrub and dry system |
ES2288998T3 (es) * | 2000-05-17 | 2008-02-01 | Henkel Kommanditgesellschaft Auf Aktien | Cuerpos moldeados de detergentes o productos de limpieza. |
US6927176B2 (en) * | 2000-06-26 | 2005-08-09 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
US6488040B1 (en) | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
KR100366623B1 (ko) | 2000-07-18 | 2003-01-09 | 삼성전자 주식회사 | 반도체 기판 또는 lcd 기판의 세정방법 |
WO2002015255A1 (en) * | 2000-08-11 | 2002-02-21 | Chem Trace Corporation | System and method for cleaning semiconductor fabrication equipment parts |
US6328042B1 (en) * | 2000-10-05 | 2001-12-11 | Lam Research Corporation | Wafer cleaning module and method for cleaning the surface of a substrate |
RU2292386C2 (ru) * | 2000-11-03 | 2007-01-27 | Унилевер Н.В. | Композиция для чистки твердых поверхностей и способ чистки |
US20020094684A1 (en) * | 2000-11-27 | 2002-07-18 | Hirasaki George J. | Foam cleaning process in semiconductor manufacturing |
US6525009B2 (en) * | 2000-12-07 | 2003-02-25 | International Business Machines Corporation | Polycarboxylates-based aqueous compositions for cleaning of screening apparatus |
US20020081945A1 (en) * | 2000-12-21 | 2002-06-27 | Rod Kistler | Piezoelectric platen design for improving performance in CMP applications |
US6596093B2 (en) * | 2001-02-15 | 2003-07-22 | Micell Technologies, Inc. | Methods for cleaning microelectronic structures with cyclical phase modulation |
US6641678B2 (en) * | 2001-02-15 | 2003-11-04 | Micell Technologies, Inc. | Methods for cleaning microelectronic structures with aqueous carbon dioxide systems |
US6493902B2 (en) | 2001-02-22 | 2002-12-17 | Chung-Yi Lin | Automatic wall cleansing apparatus |
JP2002280343A (ja) | 2001-03-15 | 2002-09-27 | Nec Corp | 洗浄処理装置、切削加工装置 |
JP2002280330A (ja) | 2001-03-21 | 2002-09-27 | Lintec Corp | チップ状部品のピックアップ方法 |
US6627550B2 (en) * | 2001-03-27 | 2003-09-30 | Micron Technology, Inc. | Post-planarization clean-up |
JP2002309638A (ja) | 2001-04-17 | 2002-10-23 | Takiron Co Ltd | 建物の排水管路における通気性掃除口 |
JP3511514B2 (ja) * | 2001-05-31 | 2004-03-29 | エム・エフエスアイ株式会社 | 基板浄化処理装置、ディスペンサー、基板保持機構、基板の浄化処理用チャンバー、及びこれらを用いた基板の浄化処理方法 |
US6802911B2 (en) | 2001-09-19 | 2004-10-12 | Samsung Electronics Co., Ltd. | Method for cleaning damaged layers and polymer residue from semiconductor device |
CN1589317A (zh) * | 2001-11-19 | 2005-03-02 | 荷兰联合利华有限公司 | 改进的洗涤体系 |
US20030171239A1 (en) * | 2002-01-28 | 2003-09-11 | Patel Bakul P. | Methods and compositions for chemically treating a substrate using foam technology |
GB2385597B (en) * | 2002-02-21 | 2004-05-12 | Reckitt Benckiser Inc | Hard surface cleaning compositions |
JP2003282513A (ja) | 2002-03-26 | 2003-10-03 | Seiko Epson Corp | 有機物剥離方法及び有機物剥離装置 |
JP4570008B2 (ja) | 2002-04-16 | 2010-10-27 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
US20040159335A1 (en) * | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
US6846380B2 (en) * | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
US20040002430A1 (en) * | 2002-07-01 | 2004-01-01 | Applied Materials, Inc. | Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use |
JP4017463B2 (ja) * | 2002-07-11 | 2007-12-05 | 株式会社荏原製作所 | 洗浄方法 |
US7240679B2 (en) * | 2002-09-30 | 2007-07-10 | Lam Research Corporation | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
US6998327B2 (en) | 2002-11-19 | 2006-02-14 | International Business Machines Corporation | Thin film transfer join process and multilevel thin film module |
US6875286B2 (en) | 2002-12-16 | 2005-04-05 | International Business Machines Corporation | Solid CO2 cleaning |
US6733596B1 (en) * | 2002-12-23 | 2004-05-11 | Lam Research Corporation | Substrate cleaning brush preparation sequence, method, and system |
US20040163681A1 (en) * | 2003-02-25 | 2004-08-26 | Applied Materials, Inc. | Dilute sulfuric peroxide at point-of-use |
US6951042B1 (en) * | 2003-02-28 | 2005-10-04 | Lam Research Corporation | Brush scrubbing-high frequency resonating wafer processing system and methods for making and implementing the same |
JP2004323840A (ja) * | 2003-04-10 | 2004-11-18 | Sumitomo Chem Co Ltd | 研磨洗浄液組成物及び研磨洗浄方法 |
US7169192B2 (en) * | 2003-05-02 | 2007-01-30 | Ecolab Inc. | Methods of using heterogeneous cleaning compositions |
US20040261823A1 (en) | 2003-06-27 | 2004-12-30 | Lam Research Corporation | Method and apparatus for removing a target layer from a substrate using reactive gases |
KR100477810B1 (ko) | 2003-06-30 | 2005-03-21 | 주식회사 하이닉스반도체 | Nf3 hdp 산화막을 적용한 반도체 소자 제조방법 |
US6946396B2 (en) * | 2003-10-30 | 2005-09-20 | Nissan Chemical Indusries, Ltd. | Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer |
KR20050044085A (ko) * | 2003-11-07 | 2005-05-12 | 삼성전자주식회사 | 집적회로 소자의 세정액 및 그 세정액을 이용한 세정방법 |
US7353560B2 (en) * | 2003-12-18 | 2008-04-08 | Lam Research Corporation | Proximity brush unit apparatus and method |
US8323420B2 (en) * | 2005-06-30 | 2012-12-04 | Lam Research Corporation | Method for removing material from semiconductor wafer and apparatus for performing the same |
US7416370B2 (en) | 2005-06-15 | 2008-08-26 | Lam Research Corporation | Method and apparatus for transporting a substrate using non-Newtonian fluid |
US8043441B2 (en) | 2005-06-15 | 2011-10-25 | Lam Research Corporation | Method and apparatus for cleaning a substrate using non-Newtonian fluids |
US7568490B2 (en) * | 2003-12-23 | 2009-08-04 | Lam Research Corporation | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
JP2005194294A (ja) | 2003-12-26 | 2005-07-21 | Nec Electronics Corp | 洗浄液及び半導体装置の製造方法 |
CN1654617A (zh) * | 2004-02-10 | 2005-08-17 | 捷时雅株式会社 | 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法 |
JP4821122B2 (ja) * | 2004-02-10 | 2011-11-24 | Jsr株式会社 | 洗浄用組成物、半導体基板の洗浄方法および半導体装置の製造方法 |
US20050183740A1 (en) * | 2004-02-19 | 2005-08-25 | Fulton John L. | Process and apparatus for removing residues from semiconductor substrates |
FI116889B (fi) * | 2004-03-03 | 2006-03-31 | Outokumpu Oy | Laite kiintoainetta sisältävän materiaalin hierto-ohentamiseksi |
US20050202995A1 (en) * | 2004-03-15 | 2005-09-15 | The Procter & Gamble Company | Methods of treating surfaces using surface-treating compositions containing sulfonated/carboxylated polymers |
JP2005311320A (ja) * | 2004-03-26 | 2005-11-04 | Sony Corp | 異物除去方法及びその装置 |
JPWO2005104202A1 (ja) * | 2004-04-21 | 2008-03-13 | 株式会社エフティーエル | 基板の洗浄方法 |
US8136423B2 (en) * | 2005-01-25 | 2012-03-20 | Schukra of North America Co. | Multiple turn mechanism for manual lumbar support adjustment |
-
2006
- 2006-11-29 EP EP11192481A patent/EP2428557A1/en not_active Withdrawn
- 2006-11-29 SG SG200904463-7A patent/SG154438A1/en unknown
- 2006-12-08 KR KR1020087018881A patent/KR101426777B1/ko not_active IP Right Cessation
- 2006-12-08 CN CN2006800500241A patent/CN101351282B/zh not_active Expired - Fee Related
- 2006-12-18 CN CNA2006800500345A patent/CN101351540A/zh active Pending
- 2006-12-18 JP JP2008548612A patent/JP4892565B2/ja not_active Expired - Fee Related
- 2006-12-18 US US11/641,362 patent/US8475599B2/en not_active Expired - Fee Related
- 2006-12-18 MY MYPI20082419A patent/MY149848A/en unknown
- 2006-12-18 SG SG201009728-5A patent/SG169975A1/en unknown
- 2006-12-18 WO PCT/US2006/048548 patent/WO2007078955A2/en active Application Filing
- 2006-12-18 EP EP06847806A patent/EP1969114A2/en not_active Withdrawn
- 2006-12-18 CN CN2006800499545A patent/CN101351281B/zh not_active Expired - Fee Related
- 2006-12-19 MY MYPI20082382A patent/MY143763A/en unknown
- 2006-12-19 CN CN2006800489399A patent/CN101370885B/zh not_active Expired - Fee Related
- 2006-12-19 JP JP2008548621A patent/JP5154441B2/ja not_active Expired - Fee Related
- 2006-12-21 KR KR1020087018873A patent/KR101312973B1/ko not_active IP Right Cessation
- 2006-12-21 JP JP2008548657A patent/JP5148508B2/ja not_active Expired - Fee Related
- 2006-12-21 CN CN200680050094.7A patent/CN101512049B/zh not_active Expired - Fee Related
- 2006-12-26 KR KR1020087018880A patent/KR101401753B1/ko not_active IP Right Cessation
- 2006-12-26 JP JP2008548829A patent/JP5237825B2/ja not_active Expired - Fee Related
- 2006-12-26 CN CN2006800534252A patent/CN101389414B/zh not_active Expired - Fee Related
- 2006-12-28 TW TW095149590A patent/TWI330551B/zh not_active IP Right Cessation
- 2006-12-29 CN CNA2006100639487A patent/CN101114569A/zh active Pending
- 2006-12-29 TW TW095149918A patent/TWI410522B/zh not_active IP Right Cessation
- 2006-12-29 CN CN2006101717515A patent/CN101009204B/zh not_active Expired - Fee Related
- 2006-12-30 CN CN2006101724970A patent/CN101034670B/zh not_active Expired - Fee Related
- 2006-12-30 CN CN200610172498.5A patent/CN101029289B/zh not_active Expired - Fee Related
-
2007
- 2007-01-02 TW TW096100024A patent/TWI335247B/zh not_active IP Right Cessation
-
2008
- 2008-07-29 KR KR1020087018741A patent/KR101376911B1/ko not_active IP Right Cessation
-
2013
- 2013-06-28 US US13/931,376 patent/US20130284217A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130164925A1 (en) * | 2011-12-22 | 2013-06-27 | Duk Eui LEE | Method of manufacturing semiconductor memory device |
US9023724B2 (en) * | 2011-12-22 | 2015-05-05 | SK Hynix Inc. | Method of manufacturing semiconductor memory device |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101370885B (zh) | 使用双相基片清洗混合物的方法和系统 | |
US7799141B2 (en) | Method and system for using a two-phases substrate cleaning compound | |
CN102209595B (zh) | 两相污染物移除介质的组成和应用 | |
CN102396050B (zh) | 从衬底除去污染物的方法和装置 | |
US7737097B2 (en) | Method for removing contamination from a substrate and for making a cleaning solution | |
US8555903B2 (en) | Method and apparatus for removing contamination from substrate | |
EP1803804B1 (en) | Method and material for cleaning a substrate | |
CN101711423B (zh) | 通过向清洁溶液施加周期性的切变应力清洁半导体晶片表面的方法 | |
CN102010662B (zh) | 微晶玻璃抛光液的制备方法 | |
CN101828252B (zh) | 用于优化图案化晶片清洁的设备和方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130417 Termination date: 20141219 |
|
EXPY | Termination of patent right or utility model |