CN101389414A - 清洁半导体基片的方法和装置 - Google Patents
清洁半导体基片的方法和装置 Download PDFInfo
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- CN101389414A CN101389414A CNA2006800534252A CN200680053425A CN101389414A CN 101389414 A CN101389414 A CN 101389414A CN A2006800534252 A CNA2006800534252 A CN A2006800534252A CN 200680053425 A CN200680053425 A CN 200680053425A CN 101389414 A CN101389414 A CN 101389414A
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- cleaning element
- cleaning
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Abstract
提供用于清洁基片的方法。该方法开始于将活化溶液应用于该基片表面。该活化溶液和该基片表面与固态清洁表面的表面接触。该活化溶液被吸收进该固态清洁元件一部分,然后该晶元基片或该固态清洁表面相对彼此移动以清洁该基片表面。还提供一种用遭受塑性变形的固态清洁元件清洁该基片表面的方法。还提供相应的清洁设备。
Description
背景技术
[0001]在半导体器件(如集成电路、存储单元等)制造中,执行一系列制造操作以在半导体晶片(“晶片”)上形成特征。这些晶片包括限定在硅基片上的多层结构形式的集成电路器件。在基片层,形成具有扩散区的晶体管器件。在之后的层中,使互连的金属线形成图案并且电连接到这些晶体管器件以形成需要的集成电路器件。并且,利用介电材料将图案化的导电层与其他导电层隔开。
[0002]在该一系列制造操作过程中,晶片表面暴露于各种类型的污染物。基本上,在制造操作中存在的任何材料都是潜在的污染源。例如,污染源可包括处理气体、化学制剂、沉积材料和液体等等。各种污染物会作为粒子物质沉积在该晶片表面。如果不去除该粒子污染,在该污染附近的器件将很可能不能工作。因此,必须基本上彻底地从晶片表面清除污染,而不损伤定义在该晶片上的特征。粒子污染尺寸往往处于制造在晶片上的特征的关键尺寸大小的量级。去除如此小的粒子污染而不对晶片上的特征造成不利影响是十分困难的。
[0003]传统的晶片清洁方法严重依赖于机械力以从晶片去除粒子污染。随着特征尺寸持续减小并且变得更易碎,由于向晶片表面施加机械力而导致特征损坏的可能性增加。例如,具有高纵横比的特征在受到足够的机械力的冲击时易损坏而崩塌或者破碎。使清理问题进一步复杂化的是朝向减小的特征尺寸的趋势也导致会产生损坏的粒子污染的尺寸减小。尺寸足够小的粒子污染会进入晶片表面难到达的区域,如被高纵横比特征围绕的沟槽或导电线路的桥等。因此,在破坏(marred)和半导体制造过程中高效和无损去除污染物是晶片清洁技术的不断进步所面临的持续挑战。应当认识到,用于平板显示器的制造操作遇到与上面讨论的集成电路制造同样的缺点。因此,任何要求污染物去除的技术都需要更有效和更少损伤的清洁技术。
发明内容
[0004]一般而言,本发明通过提供改进的清洁技术和清洁溶液满足了这些需求。应当认识到,本发明可以许多方式实现,包括实现为系统、设备和方法。下面描述本发明的多个创新性实施方式。
[0005]在一个实施方式中,提供用于清洁基片的方法。该方法开始于将活化溶液应用于该基片表面。使该活化溶液和该基片表面与固态清洁表面的表面接触。该活化溶液被吸收进该固态清洁元件的一部分,然后该基片或该固态清洁表面相对彼此移动以清洁该基片表面。
[0006]在另一个实施方式中,提供用于清洁基片的清洁设备。该清洁设备包括具有外部表面的固态材料,当暴露于设置在该基片表面之上的活化溶液时,该外部表面配置为变得比该固态材料的其他部分软。该清洁设备包括支撑结构,其配置为支撑该固态材料并且施加力以导致该外部表面接触该基片表面。
[0007]在又一个实施方式中,提供用于清洁基片的清洁系统。该清洁系统包括配置为支撑该基片的支撑件,和配置为将活化溶液传送至该基片表面的流体传送系统。该清洁系统包含具有暴露表面的固态清洁元件,当该暴露表面与该活化溶液对接时,该暴露表面含有相对于该固态清洁元件的其他部分变软的部分。该清洁系统包括支撑该固态清洁元件的支撑结构。该支撑结构配置为在清洁操作过程中保持该暴露表面抵靠该基片表面。
[0008]在再一个实施方式中,提供用于清洁基片的方法。该方法包括利用固态清洁元件的表面接触基片表面,以及使该固态清洁元件抵靠该基片表面。该方法还包括使该固态清洁元件或该基片的一个相对彼此移动,其中该移动导致该固态清洁元件的表面的塑性变形,由此将该固态清洁元件的一层沉积在该基片表面上。该方法进一步包括将该层固态清洁元件冲离该基片表面。
[0009]在另一个实施方式中,提供用于清洁基片的清洁设备。该清洁设备包括具有外部表面的固态材料。该外部表面配置为当该基片或该固态材料的一个相对彼此移动时响应施加到该固态材料的法向和/或切向力而塑性变形以防止损坏该基片。该清洁设备包括支撑结构,其配置为支撑该固态材料并传递该向下的力。
[0010]本发明的这些和其他特征将在下面连同附图、作为本发明示例描述的具体描述中变得更加明显。
附图说明
[0011]通过下面结合附图的详细描述,将容易理解本发明,以及类似的参考标号指出相似的元件。
[0012]图1A是按照本发明一个实施方式、说明单相清洁操作的高级简化示意图。
[0013]图1B是按照本发明一个实施方式、说明固态清洁元件塑性变形以沉积在基片上一层的简化示意图。
[0014]图2A是按照本发明一个实施方式、说明利用该单相元件的清洁设备的侧视图的简化示意图。
[0015]图2B是按照本发明一个实施方式、说明该固态元件下降以与该水膜和该基片接触的简化示意图。
[0016]图3A是按照本发明一个实施方式、利用该单相元件的清洁设备的侧视图的简化示意图。
[0017]图3B是按照本发明一个实施方式、图3A的清洁设备的俯视图。
[0018]图4是按照本发明一个实施方式的单相清洁固态的备选实施方式的简化示意图。
[0019]图5A是按照本发明一个实施方式,固态清洁元件描述为碟片的另一个备选实施方式。
[0020]图5B是按照本发明一个实施方式、描述单相清洁元件的元件实施方式的侧视图的简化示意图。
[0021]图6是按照本发明一个实施方式、描述单相清洁设备的活动层上进一步细节的简化示意图。
[0022]图7按照本发明一个实施方式,描述图5的离子化区域的更详细的示意图。
[0023]图8是按照本发明一个实施方式、用于清洁具有表面污染物的基片的方法的流程图。
具体实施方式
[0024]。在下面的描述中,阐述许多具体细节以提供对本发明的彻底理解。然而,对于本领域技术人员,显然,本发明可不利用这些具体细节的一些或者全部而实施。在有的情况下,公知的工艺步骤和/或结构没有详细描述,以避免不必要的混淆本发明。
[0025]这里描述的实施方式提供了一种清洁技术,其减少研磨接触并且有效地从可包含高纵横比特征的半导体基片清洁污染物。应当认识到,尽管这些实施方式提供关于半导体清洁应用的具体例子,但是,这些清洁应用可以延伸到任何需要从表面去除污染物的技术。这里描述的这些实施方式相对于待清洁表面移动单相清洁制剂,其中包含在该单相清洁制剂的固态部分内的材料对存在于晶片表面的微粒提供咬底(lifting)和去除。在一个示范性的实施方式中,固态清洁元件用作该单相清洁制剂,其中该清洁元件具有基本上平的表面,该表面与待清洁的基片表面接触。尽管在具体的实施方式将该元件称为固态清洁元件,但是该固态清洁元件也可称为圆盘、杆等。在一个实施方式中,该固态清洁元件是有脂肪酸组成,然而,其他材料也可同样有效地使用。这些其他材料可包括聚合物、烷基磺酸盐、烷基磷酸盐(alkyl phosphate)、烷基膦酸酯(alkylphosphonate)、二元共聚物、蛋白质等。
[0026]图1A是描述按照本发明一个实施方式的单相清洁操作的高级简化示意图。固态清洁元件100设置在基片102之上。固态清洁元件100由碳链组成并且可以从公知的脂肪酸中选择,如豆蔻酸、棕榈酸、硬脂酸等。在一个实施方式中,用于固态清洁元件100的材料的是在链中具有8个或者更多碳原子的碳链。应当认识到,在具有大约10个或者更多碳原子的情况下,该链在室温下为固态。然而,在一个备选实施方式中,该固态清洁元件100可由具有少于8个碳的碳链组成,并且该固态清洁元件可用在低于室温的环境中,从而该组份是固态。该固态清洁元件100的机械属性这样选择,即该固态清洁元件的硬度小于基片102上最软的材料。在一个实施方式中,在该固态清洁元件100和基片102之间的接触和相对运动过程中,该固态清洁元件100遭受塑性变形。
[0027]因此,该固态清洁元件100的一些材料被磨掉并且沉积在基片102上,成为图1B所示的涂层103。在另一个实施方式中,将涂层103从基片102冲洗掉,去除该涂层和基片102上存留的污染。如这里所使用的塑性变形,指的这样的点,在该点该固态清洁元件不能够再保持其形状,并且也可称为塑性应变或塑性流动。塑性变形通常在剪应力下发生,与在正应力下发生的脆性断裂相对。因此,施加在固态清洁元件100上的向下的力连同来自该固态清洁元件的横向转变或基片102移动的剪切力,导致固态清洁元件100底部表面的塑性变形。然后冲洗并去除膜103。应当认识到,在一个实施方式中,该固态清洁元件将与该基片102的表面上的污染物相互作用并且该污染物将随着膜103的去除而去除。
[0028]图2A是按照本发明一个实施方式,描述单相清洁操作的高级简化示意图。固态清洁元件100设置在基片102之上。基片102的顶部表面上是活化层(activation layer)104。在一个实施方式中,活化层104是具有碱性添加物的薄含水层。在一个实施方式中,该碱性添加物可从由氢氧化铵、氢氧化钠、氢氧化钠、氢氧化钾、三乙醇胺或四甲基氢氧化铵组成的组中选取。应当认识到,该碱性添加物不限于这些化合物,为任何可用来与该含水层结合的碱。固态清洁元件100由碳链组成并且可从公知的脂肪酸中选取,如豆蔻酸、棕榈酸、硬脂酸或烷基磺酸盐或烷基磷酸酯等。在一个实施方式中,用于固态清洁元件100的材料是在该链中具有8个或者更多碳原子的碳链。应当认识到,在具有大约10个或者更多碳原子的情况下,该链在室温下将是固态。然而,在备选实施方式中,该固态清洁元件具有少于10个碳的碳链,并且该固态清洁元件可用在低于室温的环境中以使该组份是固态。本领域技术人员应当认识到,活化层104可通过任何可用的公知手段设置在基片102的上表面之上。例如,活化层可以倒在基片102上,喷在或其他通常可用的手段。
[0029]在该元件是脂肪酸的实施方式中,下面是可用来组成该元件的示范性化合物。应当认识到,脂族酸基本上代表任何由有机化合物形成的酸,在这些化合物中碳原子形成开链。脂肪酸是脂族酸的一个例子,其可用作上面讨论的固态清洁材料。可用作该固态清洁元件的脂肪酸的例子包括月桂酸、棕榈酸、硬脂酸、油酸、亚油酸、亚麻酸、花生四烯酸、烯酸、芥酸、丁酸、己酸、辛酸、豆蔻酸、珍珠酸、二十二碳烷酸(behenic)、木蜡酸(lignoseric),十四碳烯酸(myristoleic),棕榈油酸、神经酸、十八碳四烯酸、二十碳五烯酸、芸薹(brassic)、二十二碳五烯酸、二十四烷酸、蜡酸等等及其混合物。在一个实施方式中,该固态清洁元件可代表从C-1到大约C-26的各种碳链长度形成的脂肪酸的混合物。羧酸是由基本上任何包括一个或多个羧基(COOH)的有机酸形成。当用作该固态清洁元件时,这些羧酸可包括从C-1到大约C-100的各种碳链长度的混合物。并且,这些羧酸可包括其他官能团,例如但不限于甲基、乙烯基、炔官能基、酰氨基、伯酰胺、仲酰胺、叔酰胺、偶氮、腈基、硝基、亚硝基、吡啶基、过氧基、醛基、酮基、伯亚胺、仲亚胺、醚、酯、卤素、异氰酸盐、异硫氰酸盐、苯基、苯甲基、磷酸二酯、巯基。
[0030]图2B是按照本发明一个实施方式,描述该固态元件下降以与该水膜和该基片接触的简化示意图。固态清洁元件100下降以接触活化层104和基片102的顶部表面。固态清洁元件100和活化层104之间接触的结果,如果活化层的pH接近该固态清洁元件的pKa(电离常数),该固态清洁元件与活化层接触的部分变成电离的。在一个实施方式中,活化层104处于高于该脂肪酸的pKa的pH。对于硬脂酸,该pKa大约是10.2。然而,本领域技术人员将认识到该电离依赖于该脂肪酸的性质。即,该pKa随着该碳链长度变化而改变。因此,对于磺酸和膦酸,不同的pH可应用于活化层104,取决于该对应的pKa。在另一个实施方式中,活化层渗透并且扩散入固态清洁元件,膨胀并且相对于固态清洁元件100其他部分改变区域106中的固态清洁元件的机械属性。该区域106的直径取决于该固态清洁圆盘和活化层材料。即使该固态清洁元件的材料属性在表面附近改变,区域106仍被认为是是固态以及元件100可被认为是单相,即固态,其中区域106相对于元件100的其他部分较软。在一个实施方式中,区域106的一部分被磨掉并且沉积在基片102上成为涂层,正如就图1B的层103所讨论的一样。在另一个实施方式中,将该涂层冲离基片102,去除该涂层和基片102上的污染物。在备选实施方式中,活化层104可以是表面活性剂/分散剂。这里,该表面活性剂/分散剂将包括离子型分子。在一个实施方式中,使用如十二烷基硫酸铵(ammonium dodecyl sulphate,ADS)的表面活性剂。在使用表面活性剂的实施方式中,可使用任何已知的非离子型、离子型或两性表面活性剂。该固态清洁元件100一部分的活化产生清洁表面,其有效清洁该基片的表面,如在共同待决申请序列号中描述的。
[0031]图3A是按照本发明一个实施方式,描述使用该单相元件的清洁设备侧视图的简化示意图。在这个实施方式中,将固态清洁元件118a-118c描述为细长杆。传送带110,其用作对于该基片的传输机构,是由辊112驱动,并且支撑将要被固态清洁元件118a至118c清洁的基片。通过储存器(reservoir)114为每个基片提供图2的活化层104,并且经由喷嘴116传递,尽管有可能没有施加该活化层。应当认识到,喷嘴和存储器可对应每个固态清洁元件118a至118c,并且为了便于描述没有示出。这样,用于不同领域的清洁可以应用于正在清洁的基片。可将固态清洁元件118a至118c转变为相对基片表面的垂直方向。应当认识到,用万向架固定的(gimbaled)技术可用来支撑固态清洁元件118a至118c的每个。
[0032]图3B是按照本发明一个实施方式,图3A的清洁设备的俯视图。如所示,传输机构110支撑基片102a至102c。在一个实施方式中,传输机构110能够夹紧该基片以牢固支撑该基片并且还能够转动该基片。由于基片在对应元件的清洁区域内,即,该杆的底部表面能够接触该基片的顶部表面,使该元件下降以接触该基片。该活化层在接触之前已经施加到该基片,以便清洁对应的基片。因此,基片102a至102c在它们横穿该路径时被对应的固态清洁元件118a至118c清洁。传送带110移动的相对速率足以为每个固态清洁元件与对应的基片102a至102c留出必需的停留时间。在一个实施方式中,每个固态清洁元件的组份可以不同。即,不同的脂肪酸或其他非脂肪酸材料,和/或不同的活化制剂可用来提供顺次定点清洁。例如,第一成分可以某一类型污染物为目标,而其他成分可以其他类型的污染物为目标。
[0033]图4是按照本发明一个实施方式,该单相清洁固态的备选实施方式的简化示意图。这里,该单相清洁固态不是圆盘或杆而是辊。该辊绕轴130转动。应当认识到,辊118d可应用于这里描述的任何实施方式中。在一个实施方式中,支撑结构131可用来将辊118d的表面抵靠晶片表面。例如,转轴(shaft)可沿轴130横穿辊118d。本领域技术人员将认识到,支撑结构131相对正在处理的晶片的平面可保持在不同的角度。另外,支撑结构131可通过已知的技术与辊118d连接,该技术允许辊118d自由转动并且允许上面提到的角运动。
[0034]图5A是另一个备选实施方式,其中将固态清洁元件描述为碟片。碟片118e相对基片102的旋转而转动,以清洁该基片102的表面。应当认识到,碟片118e相对正在清洁的基片102可以是多种直径并且该相对直径是示范性的描述并不意味着限制。本领域技术人员将认识到,基片102和碟片118e可在相同方向转动,或碟片118e和基片102可在相反方向转动。如上面所提到的,用万向架固定的支撑结构可与元件118e结合为一体。
[0035]图5B是按照本发明一个实施方式,描述该单相清洁元件的元件实施方式的侧视图的简化示意图。元件118e是贴附于支撑结构131。元件118e可通过粘合或机械方式贴附于支撑结构131,其中该支撑结构通过已知方式与该元件在结构上结合为一体。在一个示范性的实施方式中,元件118e限定在支撑件140周围以提供结构支撑。在这个实施方式中,元件118e可以认为是浇注在支撑件140周围。支撑结构131提供对元件118e的可转动支撑。当然,支撑件131可以是如上所述的用万向架固定的。储存器114通过传送管线116提供活化流体以在晶片102的上表面形成活化层104。如上面提到的,该活化层在元件118e与待处理表面接触之前施加。该基片和与该活化层接触的清洁元件电离,防止固态清洁元件吸附于基片。转动元件118e和/或晶片102以执行该清洁操作。应当认识到,元件118e保持为固态,然而,该物理属性,即该顶部部分118e-1的硬度相对该底部部分118e-2的硬度,被该元件118e底部表面的活化层104改变了。本领域技术人员将认识到,与具有孔/空腔的多孔刷不同,这里描述的这些实施方式提供固态表面,其不具有用来清洁晶片102表面的通常的刷的孔/空腔。因此,这里描述的这些实施方式提供邻近的不中断的清洁层,其与晶片102的表面一致。此外,该底部部分118e-1的活化提供更软的分界面,施加到顶部部分118e-2的压力在此处被转化为提供清洁动作。
[0036]图6是按照本发明一个实施方式,描述用于该单相清洁设备的活化层上的进一步细节的简化示意图。基片102具有设置在其上的活化层104,并且当使固态清洁元件100与活化层104接触时,水渗入固态清洁元件100。水渗入该固态清洁元件100的颗粒结构,如区域106中描述的。如所提到的,在一个实施方式中,活化层104是含水层,其中该含水层的pH是碱性以便电离和中和该区域106中的脂肪酸。本质上,该活化层渗入区域106改变了在那个区域中的固态清洁元件100的属性。例如,在区域106中,固态清洁元件100性质上可变成胶状,但仍处于固态。参考图7,描述了该区域106的电离。这里,关于硬脂酸,该羧酸基团的氢原子解离导致在区域106的分界面处产生带负电的官能团。应当认识到,通过电离或解离这些官能基,将防止被吸收到带负电的分界面。即,该固态清洁元件将不会粘附于该晶片表面,由此确保实现充分的清洁。应当认识到,在该活化层是表面活性剂/分散剂的情况下,达到上面描述的关于图6的效果。在一个实施方式中,该活化层含有化学添加物以增强污染去除。这些化学添加物包括氢氟酸、硫酸、盐酸、四甲基氢氧化铵、过氧化氢等等。
[0037]图8是按照本发明一个实施方式,描述用于清洁具有表面污染物的基片的方法操作的流程图。该方法开始于操作200,其中活化溶液通过可以不应用活化表面而进行的操作来施加到该基片表面。如上面提到的,该活化溶液可以是含水溶液,其具有大于清洁设备的pKa的pH。或者,该活化溶液可以是表面活性剂。应当认识到,该活化溶液可以倒在该基片上,或是喷在或其他目前可用的方式。该方法然后进行到操作202,其中使固态清洁表面与该活化溶液及该基片表面接触。使该固态清洁表面与该活化溶液接触,导致活化或电离/中和该固态清洁表面的一部分,如按照图6和7所示以及操作204中具体描述的。这个电离/中和或者活化防止吸收,以确保该固态清洁元件不会留下任何残留物。在一个实施方式中,其中表面活性剂用作该活化层,那么该表面活性剂防止吸收以确保该固态清洁元件将不会留下任何残留物。对于该清洁元件是碟片的实施方式,如图5A和5B中,该元件的一个示范性构造可以是尺寸为直径5英寸以及高度或深度1英寸的碟片。这里,1英寸深度的这部分大约是1/8英寸。当然,这是示范性的构造,而实际的尺寸可根据该元件的组份和是否碟片、辊等用作该固态清洁元件以及其他环境变量而变化。在一个实施方式中,该活化溶液被吸收进该固态清洁元件的一部分,如根据图5和6所描述的。
[0038]图8的方法进行至操作206,其中该基片和/或该固态清洁表面相对彼此移动以清洁该基片表面。如上面在该图中描述的,该固态清洁表面可以相对该待清洁的基片表面转动、滚动、滑动等。该固态清洁表面可以是碟片、杆、圆盘、辊,或者任何其他用于将这里描述的功能应用到待清洁的该晶片表面的适当的设备。本质上,任何可以通过塑性变形而在该基片表面上留下一个层的几何形状或任何可与该活化层接触以去除表面污染物的几何形状均可应用于这里描述的实施方式中。另外,为该固态清洁表面提供的该支撑结构可包括一个用万向架固定的结构以使得该固态清洁表面在多个维度转动,如双轴万向节。正如我们所知道的,万向节通常是由两对或者三对安装在正交的轴上的枢轴构成。
[0039]尽管已在从半导体晶片去除污染物的上下文中描述了本发明,但是应当理解,之前描述的本发明的原理和技术可同样应用于清洁除了半导体晶片之外的表面。例如,本发明可用来清洁用于半导体制造的任何设备表面,其中任何设备表面指的是与该晶片环境连通的任何表面,例如,与该晶片共享大气空间。本发明还可用在其他重视去除污染的技术领域中。例如,本发明可用在去除用于空间计划,或其他高技术领域(如表面科学、能源、光学、微电子、MEMS(微机电)、平面处理、太阳能电池、储存设备等)的零件上的污染。应当理解的是,前面提到的本发明可以使用的示范性领域的列表并不意味着排除其他领域。此外,应当认识到,在这里的示范性描述中使用的晶片可以概括为代表基本上任何其他结构,如基片、零件、面板等。
[0040]尽管本发明依照多个实施方式描述,但是可以理解,本领域的技术人员在阅读之前的说明书以及研究了附图之后将会实现各种改变、增加、置换及其等同方式。所以,其意图是下面所附的权利要求解释为包括所有这样的落入本发明主旨和范围内的改变、增加、置换和等同物。在这些权利要求里,除非在这些权利要求中明确的声明,元件和/或步骤并不意味着任何特定的操作顺序。
Claims (40)
1.一种用于清洁基片的方法,包括如下方法操作:
将活化溶液应用于该基片表面;
将固态清洁元件的表面接触该活化溶液和该基片表面;
将该活化溶液吸收进该固态清洁元件的一部分;和
将该基片或该固态清洁元件的一个相对彼此移动以清洁该基片表面。
2.根据权利要求1所述的方法,其中该活化溶液是碱性溶液。
3.根据权利要求1所述的方法,其中该活化溶液是碱性溶液,其包括从由氢氧化铵、氢氧化钠、氢氧化钾、三乙醇胺和四甲基氢氧化铵组成的组中选取的碱。
4.根据权利要求1所述的方法,其中该固态清洁元件是由脂肪酸组成的平面。
5.根据权利要求1所述的方法,其中该固态清洁元件是由从羧酸、硫酸和膦酸组成的组中选取的组份所组成的平面。
6.根据权利要求1所述的方法,其中用该固态清洁元件的表面接触该活化溶液和该基片表面的方法操作导致该固态清洁元件的表面和该基片表面的电离。
7.根据权利要求1所述的方法,其中该固态清洁元件是由从烷基磺酸盐、磷酸烷基酯和烷基膦酸酯组成组中选择的组份所组成的。
8.根据权利要求1所述的方法,其中该活化溶液扩散入该固态清洁元件的一部分,导致该部分固态清洁元件变得相对该固态清洁元件的其他部分更软。
9.根据权利要求1所述的方法,其中该活化溶液是表面活性剂。
10.根据权利要求9所述的方法,其中该表面活性剂是离子型表面活性剂。
11.一种用于清洁基片的清洁设备,包括:
具有外部表面的固态材料,当暴露于设置在该基片表面之上的活化溶液时,该外部表面配置为变得比该固态材料的其他部分软;和
支撑结构,其配置为支撑该固态材料并且施加力以导致该外部表面接触该基片表面。
12.根据权利要求11所述的设备,其中该固态材料从由脂肪酸、烷基磺酸盐、磷酸烷基酯和烷基膦酸酯组成的组中选取。
13.根据权利要求11所述的设备,其中该支撑结构包括穿过该固态材料轴的转轴,以及其中该固态材料围绕该轴转动。
14.根据权利要求11所述的设备,其中该支撑结构是用万向架固定的,并且向该固态材料提供相对该基片的转动。
15.根据权利要求11所述的设备,进一步包括:流体传送系统,其将活化溶液提供至该基片表面。
16.根据权利要求11所述的设备,其中该活化溶液是碱性的。
17.根据权利要求11所述的设备,其中该活化溶液是表面活性剂。
18.根据权利要求11所述的设备,其中该外部表面的部分被该活化溶液电离,以及其中该外部表面是平面。
19.一种用于清洁基片的清洁系统,包括:
支撑件,其配置为支撑该基片;
流体传送系统,其配置为将活化溶液传送至该基片表面;
具有暴露表面的固态清洁元件,当该暴露表面与该活化溶液对接时,该暴露表面具有相对于该固态清洁元件的其他部分变软的部分;和
支撑该固态清洁元件的支撑结构,该支撑结构配置为在清洁操作过程中保持该暴露表面抵靠该基片表面。
20.根据权利要求19所述的清洁系统,其中该固态清洁元件基本上由脂肪酸组成。
21.根据权利要求19所述的清洁系统,其中该固态清洁元件是从烷基磺酸盐、磷酸烷基酯和烷基膦酸酯组成的组中选取的材料。
22.根据权利要求19所述的清洁系统,其中该活化溶液的pH高于7.0。
23.根据权利要求19所述的清洁系统,其中该活化溶液是表面活性剂。
24.根据权利要求23所述的清洁系统,其中该表面活性剂是十二烷基硫酸铵。
25.根据权利要求19所述的清洁系统,其中该支撑结构配置为旋转该固态清洁元件。
26.根据权利要求19所述的清洁系统,其中该支撑结构配置为转换该固态清洁元件平行和垂直该基片表面。
27.根据权利要求19所述的清洁系统,其中该支撑结构保持该固态清洁元件固定。
28.根据权利要求19所述的清洁系统,其中该活化溶液与该暴露表面反应以显影相对该基片表面的该固态清洁元件胶状的分界面部分。
29.根据权利要求28所述的清洁系统,其中该胶状分界面部分捕获设置在该基片表面上的微粒。
30.根据权利要求19所述的清洁系统,进一步包括;
多个固态清洁元件,每一个该多个固态清洁元件由不同材料组成,其中该基片支撑件在每一个该多个固态清洁元件的下方移动该基片,以及其中在每一个该多个固态清洁元件的下方移动该基片之前,该流体传送系统将该活化溶液提供到该基片。
31.一种用于清洁基片的方法,包括以下方法操作:
用固态清洁元件的表面接触基片表面;
使该固态清洁元件抵靠该基片表面;
使该固态清洁元件或该基片的一个相对彼此移动,该移动导致该固态清洁元件的表面的塑性变形,由此将一层该固态清洁元件沉积在该基片表面上;和
将该层固态清洁元件冲离该基片表面。
32.根据权利要求31所述的方法,其中该固态清洁元件的硬度小于该基片的硬度。
33.根据权利要求31所述的方法,其中碱性含水溶液用于将该层固态清洁元件冲离该基片表面。
34.根据权利要求34所述的方法,其中水、硫酸和过氧化氢的混合物用于将该层固态清洁元件冲离该基片表面。
35.根据权利要求31所述的方法,其中将该固态清洁元件或该基片的一个相对彼此移动的方法操作包括使该固态清洁元件与设在该基片表面上的污染物相互作用。
36.一种用于清洁基片的清洁设备,包括:
具有外部表面的固态材料,该外部表面配置为当该基片或该固态材料的一个相对彼此移动时响应施加到该固态材料的向下的力而塑性变形以留下设置在该基片上的膜;和
支撑结构,其配置为支撑该固态材料并传递该向下的力。
37.根据权利要求36所述的设备,其中该固态材料具有的硬度小于该基片的硬度,以及其中该固态材料基本上由硬脂酸组成。
38.根据权利要求36所述的设备,进一步包括;
流体传送系统,用于冲走该设置在该基片上的膜。
39.根据权利要求36所述的设备,其中该固态材料基本上由脂肪酸组成。
40.根据权利要求36所述的设备,其中该固态材料是从烷基磺酸盐、磷酸烷基酯和烷基膦酸酯组成的组中选取的材料。
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US11/612,352 US8316866B2 (en) | 2003-06-27 | 2006-12-18 | Method and apparatus for cleaning a semiconductor substrate |
PCT/US2006/062604 WO2007079373A2 (en) | 2005-12-30 | 2006-12-26 | Method and apparatus for cleaning a semiconductor substrate |
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CN2006800499545A Expired - Fee Related CN101351281B (zh) | 2005-12-30 | 2006-12-18 | 去除微粒的方法和设备 |
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CN2006800489399A Expired - Fee Related CN101370885B (zh) | 2005-12-30 | 2006-12-19 | 使用双相基片清洗混合物的方法和系统 |
CN200680050094.7A Expired - Fee Related CN101512049B (zh) | 2005-12-30 | 2006-12-21 | 用于清洁半导体基片的方法和设备 |
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CN105453417A (zh) * | 2013-07-05 | 2016-03-30 | 阿卜杜拉国王科技大学 | 用于输送组件的系统和方法 |
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