CN101351281B - 去除微粒的方法和设备 - Google Patents
去除微粒的方法和设备 Download PDFInfo
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- CN101351281B CN101351281B CN2006800499545A CN200680049954A CN101351281B CN 101351281 B CN101351281 B CN 101351281B CN 2006800499545 A CN2006800499545 A CN 2006800499545A CN 200680049954 A CN200680049954 A CN 200680049954A CN 101351281 B CN101351281 B CN 101351281B
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Abstract
方法和系统,用于清洁基片特征的表面,该表面上具有颗粒物质,具有夹带在其中的耦合元件的射流撞击该表面。将足够的拖曳力传递到该耦合元件以使其关于该液体移动并且导致该颗粒物质相对于该基片移动。
Description
本申请要求2005年12月30日递交的美国临时申请No.60/755,377的优先权。为了所有目的,这个专利申请的公开内容通过引用结合在这里。
相关申请的交叉参考
本申请与以下申请有关:美国专利申请No.10/608,871,递交于2003年6月27日,主题为″Method and Apparatus for Removing Target Layerfrom Substrate Using Reactive Gases″;美国专利申请No.10/816,337,递交于2004年3月31日,主题为″Apparatuses and Methods for CleaningSubstrate″;美国专利申请No.11/173,132,递交于2005年6月30日,主题为″System and Method for Producing Bubble Free Liquids for Nanometer ScaleSemiconductor Processing″;美国专利申请No.11/153,957,递交于2005年6月15日,主题为″Method和Apparatus for Cleaning Substrate UsingNon-Newtonian Fluids″;美国专利申请No.11/154,129,递交于2005年6月15日,主题为″Method and Apparatus for Transporting Substrate UsingNon-Newtonian Fluid″;美国专利申请No.11/174,080,递交于2005年6月30日,主题为″Method for Removing Material from Semiconductor Wafer andApparatus for Performing the Same″;美国专利申请No.10/746,114,递交于2003年12月23日,主题为″Method and Apparatus for Cleaning SemiconductorWafers using Compressed and/or Pressurized Foams,Bubbles,and/orLiquids″;美国专利申请No.11/336,215,递交于2006年1月20日,主题为″Method and Apparatus for Removing Contamination from Substrate″;美国专利申请No.11/346,894,递交于2006月2月3日,主题为″Method for RemovingContamination From Substrate and for Making Cleaning Solution″;以及美国专利申请No.11/347,154,递交于2006年2月3日,主题为″Cleaning Compoundand Method and System for Using the Cleaning Compound″。为了所有目的,这些相关申请每个的公开内容通过引用结合在这里。
背景技术
存在减小产品中特征的关键尺寸的要求。随着特征尺寸减小,在这些特征处理过程中污染的影响增大,这些污染可能产生缺陷。示范性的污染物是颗粒物质,其包括多晶硅裂片、光刻胶微粒、金属氧化物微粒、金属微粒、研磨液残留、灰尘、污垢,以及各种基本分子,如碳、氢和/或氧。颗粒物质经常由弱共价键、静电力、范德瓦耳斯力、氢键合、库仑力或偶极-偶极相互作用粘附在表面上,使得难以去除这些颗粒物质。
历史上,通过化学和机械工艺的结合来去除颗粒物质污染物。这些工艺使用清洁工具和制剂,这可能在清洁工艺过程中引入额外的污染物。
另一种清洁基片表面的技术通过将该表面暴露于高温中以蒸发其上存在的污染物而不使用化学制剂。通过排空该表面所处的室来将这些蒸汽去除。该工艺需要的高温将其应用限制为之后的沉积工艺不能包括在接近污染物蒸发温度的温度下结构变化的材料。
另一种清洁技术公开在美国专利第6,881,687并且使用一种激光清洁与生产同步的系统。该系统加入激光清洁操作,该操作与缺陷检查操作协同工作,协作将关于剩下的缺陷的根源的信息反馈给更早的工艺阶段,用于修正该根源,而产量必然增加。在最简单的构造中,激光清洁之后剩下的微粒通过它们的类型、大小、形状、密度、位置和化学成分来表征以减少那些特定微粒存在的根源。这个信息用来提高后面处理的产品晶片的产量,从而它们的产量高于该被表征的晶片。然而,需要提供更加有效的清洁工艺,其避免在已经经过清洁处理的表面上出现残留的颗粒物质污染物。
所以,需要提供改进的技术以清洗基片表面。
发明内容
方法和系统,用于清洁基片特征的表面,该表面上具有颗粒物质,用其中夹带有耦合元件的射流撞击该表面。该方法包括用其中夹带有耦合元件的射流撞击该表面;以及向该耦合元件传递足够的动量以在该液体内移动并且向该颗粒物质传递一定量的所述动量,所述量为足以导致所述颗粒物质相对于所述基片移动的量。本发明基于这样一种信条,即其中夹带有该耦合元件的液体形成在该耦合元件和该颗粒物质污染物之间的阻挡,该阻挡妨碍该耦合元件与该颗粒物质污染物之间的相互作用。相信这会降低该耦合元件的效能以从该基片表面去除该颗粒物质污染物。如果不能避免,本发明通过形成该液体的射流削弱该流体的阻挡效果。相信该射流中该耦合元件的动量连同该流体在该表面上的撞击增加了该耦合元件与该颗粒物质污染物相互作用并将其去除的可能性。对于较低速率的流体射流,该夹带的耦合元件受到流体拖曳。这个拖曳力通过与该耦合元件的相互作用直接传递到该颗粒物质,其中产生足够的力以去除该污染。因此,本发明还可以流态运行,其中粘性力占优势。本发明的这些和其他特征将在下面连同附图所谓本发明示例的具体描述中变得更加明显。
附图说明
通过下面连同附图的具体描述可容易理解本发明,以及相似的参考标号标示相似的结构元件。
图1是示范性的基片清洁系统的简化的侧视图,其中结合本发明一个实施方式;
图2是示范性的基片清洁系统的简化俯视图,其中结合本发明的一个实施方式;
图3是示出依照本发明的一个实施方式的所使用的以从基片表面去除颗粒物质污染物的液体的平面图;
图4展示依照本发明的相对图中污染物的悬浮的韧性区域的相对横截面积;
图5是依照本发明的在图4示出的所使用的液体的平面图,展示了为了促进从晶片表面去除该颗粒物质污染物而施加在颗粒物质上的力;
图6是图4和5所示液体的平面图,展示由该液体呈现的对其中夹带的耦合原件的阻挡区域;
图7是示出依照本发明一个实施方式的图1所示的LAS操作的详细视图;
图8是示出依照本发明第一备选实施方式的图1所示的LAS操作的详细视图;
图9是示出依照本发明第二备选实施方式的图1所示的LAS操作的详细视图;
图10是示出依照本发明第三备选实施方式的图1所示的LAS操作的详细视图;
图11是示出依照本发明第四备选实施方式的图1所示的LAS操作的详细视图;
图12是示出依照本发明第五备选实施方式的图1所示的LAS操作的详细视图;以及
图13是示出依照本发明另一实施方式用来从基片表面去除颗粒物质污染物的流体的平面图。
具体实施方式
在下面的描述中,阐述许多具体细节以提供对本发明的彻底理解。然而,对于本领域技术人员,显然,本发明可不利用这些具体细节的一些或者全部而实施。在有的情况下,公知的工艺步骤和/或结构没有说明,以避免不必要的混淆本发明。
参考图1,用来清洁基片11的系统10设置在洁净室,其壁和底部分别以12和14表示。系统10包括外壳,相对的壁16和18,延伸在该相对壁之间的底部20。系统10包括多个处理区域,示为22、24和26,其位于托盘28的多个部分,该托盘具有形成在其中的凹座。当为了促进清洁基片11而将其置于处理区域22、24和26之一时,与每个处理区域22、24和26相关联的是液体涂敷器(applicator)系统(LAS)以在基片11上沉积化学制品。具体地,LAS 32与处理区域22相关联,LAS 34与处理区域34相关联以及LAS 36与处理区域26相关联。为了达到这个目的,化学制品容器(示为42、44和46)有选择地设置为经由管线47、48、49和50以及质量流量控制器MFC 52、54和56与LAS 32、34和36的一个或者多个流体连通。
由壁供给源58通过管线59向与其流体连通的容器42、44和46提供合适的化学制品。壁供给源58与合适的化学制品的存储箱(未示)流体连通,该存储箱在该洁净室以及壁12之外以有选择地将化学制品放置在通过阀门62、64和66与容器42、44和46流体连通的存储箱(未示)中。尽管仅示出容器42、44和46,以及三个阀门62、64和66,但是可包括许多额外的容器和阀门以帮助控制用在由系统10执行的工艺中的许多化学制品。可达此目的的示范性化学制品包括异丙醇(IPA),二氧化碳(CO2),氮(N2),乙二醇,去离子水(DIW),氨(NH3),氟化氢(HF),氩(Ar),氧(O2),过氧化氢(H2O2),氢(H2),氢氯酸(HCl),臭氧(O3),过氧化铵(NH4OH)和/或其组合,例如,一种这里称作SC-I溶液(NH4OH/H2O2/H2O)的去泡剂。尽管未示,系统10可以完全封闭形成室67。为了控制系统10中的压力,泵68可设置为与室67流体连通。
参考图1和2,基片可由托辊70支撑在处理区域22中。其他合适的用于移动晶片的技术还可包括夹持爪(holding prong)(未示)、载运盘(未示)、机器人和轨道。在这个例子中,将基片11移动到处理区域24和26是由机器人72和托架子系统完成的。托架子系统包括所连接的可移动台74,以在一对分开的轨道76相对端之间往复运动并有选择地将基片11设置在处理区域24和26中。为了达到这个目的,马达78连接到可移动台74以使用合适的机构提供必需的移动,该机构例如螺纹传动装置或直接驱动传动装置等。机器人72包括一对操纵臂80以抬高基片11并且在辊托(rollercarrier)70和可移动台74之间移动,并且安装成在马达80的驱动下沿轨道82在处理区域22和24之间往复运动。对着机器人72设置的可以是另外一个机器人84,其具有与机器人72相同的设计。机器人84的作用是在退出处理区域26时将基片11从可移动台74移除。各种子系统的运行可由运行计算机可读指令的处理器86来控制,这些指令存在于与处理器86数据通信的存储器88中。系统10还可连接到局域网、城域网和/或广域网。具体地,处理器86与LAS 32、34和36,MFC 52、54和56,马达78、机器人80和84以及泵68数据通信以控制其操作。
参考图3,可从LAS 32、34和36出来的示范性液体包括具有多个区域的悬浮液90,这些区域具有不同的流动特征,从而与这些区域的一个有关的流动特征不同于与其余区域相关的流动特征。在当前的例子中,悬浮液90包括液体区域92和耦合元件94。液体区域92具有与其相关的第一粘度。耦合元件94可包括刚性固体、韧性固体或具有流体特征的固体,即,固体的粘度远大于与液体区域92有关的粘度。耦合元件94夹带在整个液体区域92,从而液体区域92起到传输耦合元件94的作用以有助于将耦合元件94设在基片11的表面98上存在的颗粒物质污染物96附近。
耦合元件94由能够通过传递来自悬浮液90的力而从表面98去除污染物96的材料组成,即,移动液体区域92到与耦合元件94关联的污染物96。因此,需要提供横截面积足以从表面98去除污染物96的耦合元件94。通常,该耦合元件94的横截面积大于污染物96的横截面积。这样,促进了响应作用在耦合元件94上的拖曳力的污染物96的移动,需要理解拖曳力包括摩擦力和法向力,而该法向力包括动量。拖曳力是与液体区域92和耦合元件94的物理属性和相对速度有关的函数。
在污染物96表面上的摩擦力即拖曳力的切向分量是该污染物表面的剪切应力乘以该污染物的表面积: 作用在该耦合元件上的摩擦力是该耦合元件表面的剪切应力乘以耦合元件的表面积: 与污染物96接触的耦合元件94直接传递其摩擦力。因此,该污染物受到的表面剪切应力是该耦合元件94与污染物96表面积的比。具体地,该污染物受到的表面剪切力是 其中A是该耦合元件94的横截面积,以及Ac是该污染物96的横截面积。假设,例如,污染物96的有效直径D小于大约0.1微米以及每个耦合元件94的宽度W和长度L为大约5微米到大于50微米。假设耦合元件94的厚度t为大约1到大约5微米,该比率(或者压力倍数)的范围在大约2500到大约250000之间。当该法向力包含在该拖曳力计算中时,这个数值会增加。为了便于讨论,关于六面体讨论图4所示的耦合元件94。然而,应当理解耦合元件基本上具有任意形状,以及上面提及的长度L、宽度W和厚度t是悬浮液中耦合元件94的平均值。
参考图5,与耦合元件94关联的传递到污染物96的力通过一种或者多种不同的机制将耦合元件94耦合到污染物而实现。为了达到这个目的,液体区域92在液体区域92内的耦合元件94上施加向下的力从而将耦合元件94带到表面98上的污染物96附近或与之接触。当移动耦合元件94靠近或者接触污染物96时,在耦合元件94和污染物96之间发生耦合。耦合机制是形成耦合元件94和污染物96的材料及其属性的函数。耦合元件94和污染物96足以允许传递足够量的力以克服污染物96和表面98之间的附着力,以及耦合元件94和污染物96之间的任何斥力。因此,当耦合元件94被剪切力从表面98移走时,耦合在那里的污染物96也被从表面98移走,即,污染物96从表面98清除。
一种这样的耦合机制是耦合元件94和污染物96之间的机械接触。为了达到这个目的,耦合元件94的韧性可比污染物96更高或者更低。在耦合元件94的韧性比污染物96高的实施方式中,传递在污染物96上的力由于耦合元件94的变形而减小,这个变形是由与污染物96的撞击而引起的。结果,污染物96变成印压在耦合元件94内和/或卷入耦合元件94的网内。这会在耦合元件94和污染物96之间产生机械连接,固定它们之间的相对位置。机械应力可从耦合元件94传递到污染物96,由此增加污染物96从表面98挣脱的可能性。另外,也会出现化学耦合机制,如污染物96和耦合元件94之间的粘结。
在耦合元件94和污染物96足够硬的情况下,会发生基本上是弹性的碰撞,导致相当多的能量从耦合元件94传递到污染物96,由此增加污染物96从表面98脱离的可能性。然而,耦合元件94和污染物96之间粘结的化学耦合机制会被减弱,这会减小通过该碰撞所获得的可能性。
另外,对于上面讨论的机械和化学耦合机制,可能发生静电耦合。例如,要是耦合元件94和污染物96具有相反的表面电荷,它们将电吸引(electrically attract)。有可能耦合元件94和污染物96之间的静电引力足以克服将污染物96与表面98连接的力。应当认识到前面提到的一种或者多种耦合机制可关于表面上的一种或多种污染物96在任何给定的时间发生。另外,这可能随机发生或者可通过包含不同形成以及具有不同形状和硬度的耦合元件94而引起。或者,该临近的耦合元件94和该污染物96之间的静电排斥力可能足够强而将该污染物96从该表面98逐出。
悬浮液90的示范性实施方式包括液体区域92,其粘度大约1厘泊(cP)到大约10000cP。此外,液体区域92可以是牛顿流体或非牛顿流体。可用作液体区域92的示范性材料包括去离子水(DIW),碳氢化合物,碳氟化合物,矿物油或酒精等。此外,悬浮液90可包括离子或非离子溶剂和其他化学添加剂。例如,对该悬浮液90的化学添加剂可包括辅助溶剂、pH调节剂、鳌合剂、极性溶剂、表面活性剂、氢氧化铵、过氧化氢、氢氟酸、羟化四甲铵和流变调节剂(如聚合体、微粒和多肽)的任意组合。
耦合元件94可具备实质上表示任何子状态的物理属性,从而除了上面阐述的这些属性,当设为紧密临近或接触表面98时,不粘附在表面98。另外,由耦合元件94导致的对表面98的损伤应当最小,耦合元件94与表面98之间的附着力也一样应当最小。在一个实施方式中,该耦合元件94的硬度小于该表面98的硬度。而且,当设置为邻近或者接触表面98时,耦合元件94避免粘附到表面98。各种实施方式中,耦合元件94可以为结晶体或非结晶体。非结晶体的例子包括脂族酸、羧酸、石蜡、蜡、聚合物、聚苯乙烯、多肽和其他粘弹性物质。为了达到这个目的,悬浮液90中的耦合元件94的浓度应当超过在液体区域92中的溶解度限制。
应当理解该脂族酸实际上代表任何由有机化合物形成的酸,其中碳原子形成开放的链。脂肪酸是可用作悬浮液90中耦合元件94的脂族酸的一个例子。可用作固体成分109的脂肪酸的例子包括月桂酸、棕榈酸、硬脂酸、油酸、亚油酸、亚麻酸、花生四烯酸、顺9-二十碳烯酸、酪酸、丁酸、己酸、辛酸、豆蔻酸、十七酸、二十二(碳)烷酸、lignoseric酸、9-十四烯酸、棕桐油酸、神经酸、十八碳四烯酸、二十碳五烯酸、巴西烯酸、鰶鱼酸、二十四(烷)酸、蜡酸及其混合物。
在一个实施方式中,耦合元件94可代表由多种不同碳链长度(从C-1到C-26)形成的脂肪酸的混合物。羧酸实质上由任何包括一个或多个羧基(COOH)的有机酸形成。当用作耦合元件94时,该羧酸可包括多种不同碳链长度(从C-1到C-100)的混合物。并且,这些羧酸可包括其他功能基团,比如,但不限于,甲基、乙烯基、炔,酰胺,伯胺,仲胺,叔胺,偶氨基,腈,硝基,亚硝基,吡啶基,羧基,过氧基,醛,酮,伯亚胺,仲亚胺,醚,酯,卤素,异氰酸酯,异硫氰酸盐,苯基,苯甲基,磷酸二酯,氢硫基,但是仍保持不溶于该悬浮液90。
一种形成具有由羧酸成分形成的区域的悬浮液90的方法包括使液体区域92呈现为凝胶体,其由浓度大约3%到大约5%,优选为大约4%到大约5%的羧酸固体与去离子水(DIW)形成。该浓度可加热到75℃到大约85℃之间,促进这些固体进入溶液,即,溶解。一旦这些固体溶解,就可以冷却该清洁溶液。在该冷却过程中,针状或片状的固体化合物将会沉淀。以这种方式形成示范性的悬浮液90,在每秒0.1的剪切速率下粘度为大约1000cP,当剪切速率增加到每秒1000时,该粘度降低到大约10cP,即,其为非牛顿流体。应当理解悬浮液可由一种或多种羧酸(或盐)溶于水以外的溶剂而形成,可采用极性或者非极性溶剂。
悬浮液90、耦合元件94的另一实施方式是由水解的化学制剂形成,或者通过包括表面活性剂而形成。例如,在液体区域92中可包括分散剂材料以促进耦合元件94分散在整个悬浮液90中。为了达到这个目的,可向悬浮液90添加碱(base)以从羧酸或硬脂酸材料中夹带耦合元件94,羧酸或硬脂酸材料的数量少于化学计量。一种示范性的碱是氢氧化铵,然而,任何商业上可以得到的碱均可用于这里描述的实施方式。另外,形成耦合元件94的材料的表面功能性会受到可溶于悬浮液90的那部分的影响,如羧化物,磷酸盐,硫酸根基团,多羟基基团,环氧乙烷等。这样,就有可能将耦合元件94分散在整个悬浮液90中,而避免它们不希望的聚集,即,形成基本上均质的悬浮液90。这样,避免了这种情况,即耦合元件94的聚集变得不足以耦合和/或将污染物96从表面98去除。
参考图6和7,遇到了与润滑层的生成有关或者由润滑层产生的问题,在液体区域92中示为102和104。在污染物96和一个或多个耦合元件94之间的空隙106中存在润滑层102和104证明是有问题的。具体地,润滑层102和104的粘滞阻力会阻止耦合元件94和污染物96之间由于,尤其是,耦合元件94的动量传播而发生机械耦合。一种避免由润滑层102和104导致的缺陷的方法是在液体区域92产生紊流,即减弱润滑层102和104中可能存在的层流的影响。为了达到这个目的,LAS 32引导悬浮液90的射流108以足够的速度将足够动量传递到耦合元件94以允许该耦合元件传播穿过液体区域92并且撞击污染物。传递到这些区域上的动量应当足以克服润滑层102和104的粘滞阻力并且传递足够的拖曳力以从表面98去除污染物,如上面讨论的。具体地,液体区域92和耦合元件94之间质量和密度的不同,与由LAS 32传递到悬浮液90的速度共同导致耦合元件94继续向表面98传播,其速率大于当悬浮液与基片98撞击时或者之后液体区域92的速率。结果,相信与润滑层102和104有关的该粘滞阻力被耦合元件94克服允许耦合元件与污染物94耦合,或者润滑层102和104的粘滞阻力被生成的紊流减小,该紊流是由耦合元件94经过液体区域92的移动所产生的。如所示,射流108包括多个流,一般示为110-114,其每个以相对表面98法向不同的角度同时到达表面98。如所示,该角度通常是钝角。
参考图8,在另一个实施方式中,LAS 32可实现为提供这样的射流208,其中多个流(示为210和211)基本上平行地撞击表面,即,以共同的角度撞击表面98。具体地,沿着路径212引导流210和211,从而该路径平行于流210和211。
参考图9,有可能使射流208先后以多个不同角度撞击表面98。为了达到这个目的,基片11安装在与马达222连接的底座220上,它们帮助改变相对于射流208的路径212的法向的角度。或者,LAS 332的喷嘴323可连接到马达322以帮助以不同的角度撞击射流208,如图10所示的用虚线表示的喷嘴324所示范的。
参考图7,8,9,10和11,在一个实施方式中射流108或射流208的任意一个撞击在表面98的局部点340。为了确保基本上全部的表面98暴露于点340或线(未示),须保证基片11和LAS 32和喷嘴423之间的相对运动。为了达到这个目的,基片11可在方向342转动和/或沿着两个横向延伸的方向344和346平移。备选地,或者另外,喷嘴423可沿由箭头348标示的方向移动,以及沿横向延伸的由一个或多个箭头350和352标示的方向平移。尽管沿由342、344、346和/或352表示的方向发生移动,但是角度可以变化,从而射流108或射流208的任意一个可相对于法向N不同的角度扫过表面98。或者,角度可以在沿由一个或多个箭头342,344,346和/或352标示的方向发生移动后改变。这样,点340或线(未示)可以沿着任何需要的路径(例如平行条纹、蛇形条纹等)扫过整个表面98区域(或者其任何亚部分)。具体地,射流108或208的任意一个可以不同的角度撞击表面98同时表面11和射流108或射流208之间的相对运动沿着相对该射流108或射流208横向延伸的平面(即表面98位于其中的平面)发生。
参考7,8,9,10和图12,示出一个实施方式,其中射流108或射流208任意一个以纵贯基片11直径D延伸的线354撞击表面98。通过产生沿箭头356标示方向的喷嘴323和基片11的相对运动而在表面区域上移动线。这个相对运动可通过移动基片11、喷嘴423或两者来实现。应当理解随着沿箭头356标示的方向发生相对运动而呈现给线354的基片11的宽度发生改变。为了达到这个目的,喷嘴423适于随着沿箭头356标示的方向发生基片11和喷嘴423的相对运动而动态变化。这样,可提供宽度基本上与基片11宽度相当的线354。或者,如果不能更宽,该线354的宽度可建立为至少与基片11最宽的区域一样宽。随着移动沿箭头356标示的方向发生,角度可以变化,从而射流108或射流208任意一个可以相对法向不同的角度扫描。或者,可在沿一个或多个箭头342,344,346和/或352标示的方向发生移动后改变角度这样,点340或线(未示)可以不同角度沿着任何需要的路径(例如平行条纹、蛇形条纹等)扫过整个表面98区域(或者其任何亚部分)。具体地,射流108或208任意一个可以不同的角度撞击表面98,同时表面11和射流108或射流208之间的相对移动沿着相对该射流108或射流208横向延伸的平面(即,表面98位于其中的平面)发生。
参考图13,在另一个备选实施方式中,悬浮液190可包括额外的成分,称为不混溶成分111,其夹带在液体区域192。不混溶成分可包括气相、液相、固相材料或其组合。在当前的例子中,不混溶成分111是完全由多个隔开的分散在整个悬浮液190的液体区域192的气泡的区域。该不混溶成分包括悬浮液190容积的5%到99.9%。或者,不混溶成分可包括悬浮液90重量的50%到95%。示范性的气相不混溶成分111可由下面的气体形成:氮气N2,氩气Ar,氧气O2,臭氧O3,过氧化物H2O2,空气,氢气H2,氨气NH3,氢氟酸HF。
液相不混溶成分111可包括低分子量烷烃,如戊烷、己烷、正庚烷、辛烷、壬烷、癸烷或矿物油。或者,液相不混溶成分111可包括油溶表面调节剂。
参考图3和13,关于去除污染物96,悬浮液190的作用基本上类似于悬浮液90,而耦合元件94基本上类似于耦合元件94,以及液体区域192基本上类似于液体区域92。在悬浮液190中,然而,相信不混溶成分111有助于将耦合元件194设置为接触或者十分贴近污染物96。为了达到这个目的,紧密邻近或者接触污染物96的一个或者多个区域设置在污染物96和一个或多个不混溶成分111之间。由于具有与之相关的表面张力,不混溶成分111是耦合元件194经受响应液体区域192中的力而作用在耦合元件194上的力(F)。这个力(F)向表面98并因此向污染物96移动耦合元件194。耦合元件194和污染物96的耦合可以上面讨论的关于耦合元件94和污染物96的任何方式发生。
不混溶成分111在设置在基片11上之前可夹带在悬浮液190中。或者,不混溶成分111可随着悬浮液设在表面98上原位夹带在悬浮液190中,和/或可通过悬浮液190与表面98的撞击生成,由此夹带存在于周边环境的气体,如空气,例如,生成泡沫。在一个例子中,当悬浮液190经受相对于悬浮液190压力低的环境压力时,不混溶成分111可由溶解在液体区域192内的由该溶液出来的气体生成。这个工艺的一个优点是不混溶成分111的主要部分将在耦合元件194附近形成,由于耦合元件194在重力下向表面98移动固定。这增加了耦合元件194与污染物96结合的可能性。
与二元状态的悬浮液90一样,三元状态的悬浮液190可包括额外的成份以修改和改进耦合元件194和污染物之间的耦合机制。例如,可改变该液体媒介的pH以抵消该固体成分和污染物的一个或两个的表面电荷,从而减小或放大静电排斥。另外,该悬浮液190的温度循环可用来控制或改变其属性。例如,耦合元件94可由这样的材料形成,其韧性可正比或者反比于温度而变化。用这种方式,一旦耦合元件94与污染物的形状相一致,可改变该悬浮液的温度以降低其韧性。另外,该悬浮液190的溶解度,并由此该耦合元件94的浓度可正比或者反比温度而变化。
一种示范性的悬浮液190通过将加热到超过70摄氏度的硬脂酸固体与加热到超过70摄氏度的DIW结合来制造。与该DIW结合的硬脂酸固体的量大约为0.1%到10%重量分。这个组合足以将该硬脂酸成份在该DIW中分散/乳化。将该组合物的pH水平调节到9以上以中和该硬脂酸成份。这通过添加碱如氢氧化铵(NH4OH)以提供0.25%到10%重量分的浓度来实现。这样,形成酸基混合物,将其搅拌20分钟以确保该混合物的同质性。该酸基混合物允许到达环境温度并且沉淀以形成耦合元件194。希望在沉淀到达10到5000微米范围的过程中形成耦合元件194。如果需要,当搅拌酸基混合物时,不混溶成分111可由该酸基混合物中夹带的空气形成。
在另一个实施方式中,悬浮液190可由磨成大小在0.5到5000微米范围的微粒的粒状硬脂酸固体形成。该磨碎的硬脂酸粒状添加到DIW,同时搅动它以形成酸-DIW混合物。可通过任何已知的方式搅动该DIW,如摇动、搅拌、旋转等。该硬脂酸形成该酸-DIW混合物重量的大约0.1%到10%。通过添加碱使得该酸-DIW混合物的pH水平接近9,从而实现该硬脂酸的解离。示范性的碱包括氢氧化铵(NH4OH),所含浓度为重量分0.5%到10%。这使得该硬脂酸成份离子化,形成固化的硬脂酸微粒。通常,该NH4OH添加到该酸-DIW混合物,同时搅动该混合物以将固化的硬脂酸微粒分散于整个酸-DIW混合物中。这些固化的硬脂酸微粒的尺寸分布在0.5到5,000微米的范围内。
在又一个实施方式中,悬浮液190由硬脂-棕榈酸混合物溶解在异丙醇(IPA)中同时搅动IPA形成,如上面讨论的。这提供溶解的脂肪酸的浓度呈现的浓度范围为2%到20%重量分。加热该IPA同时避免其沸腾,和/或添加有机溶剂(如丙酮、苯或其组合)可提高该脂肪酸的溶解度。在分解之后在该浓度中残留的任何固体可通过过滤或离心分离技术去除,产生没有固体的溶液。该没有固体的溶液可与对于该脂肪酸是非溶剂的液体(如水)混合,以沉淀脂肪酸固体。该沉淀脂肪酸变成悬浮在溶液中,其尺寸分布在0.5和5000微米的范围内。离子化该硬脂酸成分,如上面讨论的。
尽管本发明依照多个实施方式描述,但是可以理解,本领域的技术人员在阅读之前的说明书以及研究了附图之后将会实现各种改变、增加、置换及其等同方式。所以,其意图是下面所附的权利要求解释为包括所有这样的落入本发明主旨和范围内的改变、增加、置换和等同物。在这些权利要求里,除非在这些权利要求中明确的声明,元件和/或步骤并不意味着任何特定的操作顺序。
Claims (20)
1.一种用于清洁基片表面的方法,该表面上具有颗粒物质,所述方法包括:
使用其中夹带有耦合元件的液体撞击所述表面,其中所述耦合元件为比所述颗粒物质更具有韧性的固体;以及
向所述耦合元件传递足够的拖曳以使其在所述液体内移动,并且向所述颗粒物质传递一定量的所述拖曳,所述量是足以使所述颗粒物质相对于所述基片移动的量。
2.根据权利要求1所述的方法,其中传递进一步包括向所述耦合元件和所述液体提供相对动量以促进所述耦合元件接触所述颗粒物质并且导致所述颗粒物质相对于所述基片移动。
3.根据权利要求1所述的方法,其中传递进一步包括使所述液体的射流扫过所述表面。
4.根据权利要求1所述的方法,其中传递进一步包括扫描射流以使所述液体以相对所述表面法向不同的角度撞击所述表面。
5.根据权利要求1所述的方法,其中传递进一步包括沿第一方向扫描射流以使所述液体以相对所述表面法向不同的角度撞击所述表面,同时在所述射流和所述表面之间产生沿相对所述射流横向延伸的平面的相对运动。
6.根据权利要求1所述的方法,其中撞击进一步包括沿路径引导射流以使所述液体撞击所述表面,同时在所述路径和相对所述表面的法向之间产生不同的角度,所述法向位于从所述表面正交延伸的平面内,所述路径设置为相对所述平面处于不同的角度。
7.根据权利要求1所述的方法,进一步包括在所述表面上产生所述液体的泡沫。
8.根据权利要求1所述的方法,其中撞击进一步包括引导所述液体的射流到所述表面,并且进一步包括终止所述射流并且在所述表面上由所述液体产生泡沫。
9.根据权利要求1所述的方
法,其中撞击进一步包括将所述液体的射流引导至所述表面上和进一步包括终止所述射流以及在所述表面上生成所述液体的泡沫并将所述泡沫暴露于流体以从该表面去除该泡沫和暴露所述流体于真空以去除该流体量。
10.一种用于清洁基片表面的方法,该表面之上具有颗粒物质,所述方法包括:
沿第一方向扫描液体的射流,该液体具有夹带在其中的耦合元件,以相对所述表面法向不同的角度撞击所述表面,同时在所述射流和所述表面之间产生沿相对所述法向横向延伸的平面的相对移动以将足够的拖曳传递到所述耦合元件从而在所述液体内移动,和将一定量的所述拖曳传递到所述颗粒物质,所述量是足以使所述颗粒物质相对于所述基片移动的量,其中所述耦合元件为比所述颗粒物质更具有韧性的固体。
11.根据权利要求10所述的方法,其中所述法向位于与所述表面正交延伸的平面内,以及扫描进一步包括以相对所述平面不同的角度引导设置路径。
12.根据权利要求10所述的方法,进一步包括在所述表面上生成所述液体的泡沫。
13.根据权利要求10所述的方法,进一步包括终止所述射流以及在所述表面上生成所述液体的泡沫。
14.根据权利要求10所述的方法,进一步包括终止所述射流,和在所述表面上生成所述液体的泡沫,和将所述泡沫暴露于流体以从该表面去除该泡沫,和将所述流体暴露于真空以去除该流体量。
15.一种系统,其具有处理区域,用于从基片表面清除颗粒物质,所述系统包括:
流体传递子系统;
托架子系统,以支撑所述基片;
喷射子系统;
处理器,与所述流体传递子系统、所述托架子系统和所述喷射子系统数据通信;以及
存储器,与所述处理器数据通信,所述存储器存储通过所述处理器运行的计算机可读指令,所述计算机可读指令包括代码以控制所述流体传递子系统和所述喷射子系统以撞击所述表面,液体的射流含有夹带在其中的耦合元件并具有足够的拖曳以使所述耦合元件在所述液体内移动,以及传递一定量所述拖曳到所述颗粒物质以使所述颗粒物质相对所述基片移动;
其中所述耦合元件为比所述颗粒物质更具有韧性的固体。
16.根据权利要求15所述的系统,进一步包括泵系统和其中所述计算机可读指令进一步包括代码,以控制所述喷射子系统的运行以纵贯所述表面扫描所述液体的所述射流。
17.根据权利要求15所述的系统,其中所述计算机可读指令进一步包括代码以控制所述喷射子系统的运行以扫描所述射流从而以相对所述表面法向不同的角度撞击所述表面。
18.根据权利要求15所述的系统,其中所述计算机可读指令进一步包括代码以控制所述喷射子系统和所述托架子系统的运行以沿第一方向扫描所述射流从而以相对所述表面法向不同的角度撞击所述表面,同时产生所述射流和所述表面之间的沿相对所述射流横向延伸的平面的相对移动。
19.根据权利要求15所述的系统,其中所述计算机可读指令进一步包括代码以控制所述喷射子系统的运行以沿第一方向扫描所述射流从而以相对所述表面法向不同的角度撞击所述表面,同时产生所述射流和所述表面之间的沿相对所述射流横向延伸的平面的相对移动。
20.根据权利要求15所述的系统,其中所述计算机可读指令进一步包括代码以控制所述喷射子系统的运行,从而引导所述射流沿着路径而撞击所述表面,同时产生所述路径和所述表面法向之间不同的角度,所述法向位于与所述表面正交延伸的平面,用来控制的代码进一步包括指令,使得所述喷射子系统变化所述路径和所述平面之间的角度。
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- 2006-12-18 JP JP2008548612A patent/JP4892565B2/ja not_active Expired - Fee Related
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