JP5060782B2 - 基板を洗浄するための方法および材料 - Google Patents
基板を洗浄するための方法および材料 Download PDFInfo
- Publication number
- JP5060782B2 JP5060782B2 JP2006353539A JP2006353539A JP5060782B2 JP 5060782 B2 JP5060782 B2 JP 5060782B2 JP 2006353539 A JP2006353539 A JP 2006353539A JP 2006353539 A JP2006353539 A JP 2006353539A JP 5060782 B2 JP5060782 B2 JP 5060782B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- phase body
- cleaning method
- particles
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 85
- 238000000034 method Methods 0.000 title claims description 52
- 238000004140 cleaning Methods 0.000 title claims description 43
- 239000000463 material Substances 0.000 title description 8
- 239000012071 phase Substances 0.000 claims description 150
- 239000007787 solid Substances 0.000 claims description 71
- 239000002245 particle Substances 0.000 claims description 65
- 239000007788 liquid Substances 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 50
- 239000012459 cleaning agent Substances 0.000 claims description 27
- 230000003993 interaction Effects 0.000 claims description 26
- 239000004094 surface-active agent Substances 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 9
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 8
- 239000000194 fatty acid Substances 0.000 claims description 8
- 229930195729 fatty acid Natural products 0.000 claims description 8
- 150000004665 fatty acids Chemical class 0.000 claims description 8
- 239000007790 solid phase Substances 0.000 claims description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000007791 liquid phase Substances 0.000 claims description 6
- 150000001735 carboxylic acids Chemical class 0.000 claims description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 239000006260 foam Substances 0.000 claims description 4
- 230000006870 function Effects 0.000 claims description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005642 Oleic acid Substances 0.000 claims description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 2
- 235000021314 Palmitic acid Nutrition 0.000 claims description 2
- 235000021355 Stearic acid Nutrition 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- -1 fatty acid salt Chemical class 0.000 claims description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 claims description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 2
- 230000001737 promoting effect Effects 0.000 claims description 2
- 239000008117 stearic acid Substances 0.000 claims description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims 1
- 239000002518 antifoaming agent Substances 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims 1
- 239000000725 suspension Substances 0.000 claims 1
- 239000000356 contaminant Substances 0.000 description 37
- 239000000126 substance Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 238000005273 aeration Methods 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- YWWVWXASSLXJHU-AATRIKPKSA-N (9E)-tetradecenoic acid Chemical compound CCCC\C=C\CCCCCCCC(O)=O YWWVWXASSLXJHU-AATRIKPKSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 235000021353 Lignoceric acid Nutrition 0.000 description 2
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 230000003254 anti-foaming effect Effects 0.000 description 2
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- FARYTWBWLZAXNK-WAYWQWQTSA-N ethyl (z)-3-(methylamino)but-2-enoate Chemical compound CCOC(=O)\C=C(\C)NC FARYTWBWLZAXNK-WAYWQWQTSA-N 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- SECPZKHBENQXJG-FPLPWBNLSA-N palmitoleic acid Chemical compound CCCCCC\C=C/CCCCCCCC(O)=O SECPZKHBENQXJG-FPLPWBNLSA-N 0.000 description 2
- IJTNSXPMYKJZPR-UHFFFAOYSA-N parinaric acid Chemical compound CCC=CC=CC=CC=CCCCCCCCC(O)=O IJTNSXPMYKJZPR-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- GWHCXVQVJPWHRF-KTKRTIGZSA-N (15Z)-tetracosenoic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCCCC(O)=O GWHCXVQVJPWHRF-KTKRTIGZSA-N 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- YWWVWXASSLXJHU-UHFFFAOYSA-N 9E-tetradecenoic acid Natural products CCCCC=CCCCCCCCC(O)=O YWWVWXASSLXJHU-UHFFFAOYSA-N 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- XJXROGWVRIJYMO-SJDLZYGOSA-N Nervonic acid Natural products O=C(O)[C@@H](/C=C/CCCCCCCC)CCCCCCCCCCCC XJXROGWVRIJYMO-SJDLZYGOSA-N 0.000 description 1
- 235000021319 Palmitoleic acid Nutrition 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HXWJFEZDFPRLBG-UHFFFAOYSA-N Timnodonic acid Natural products CCCC=CC=CCC=CCC=CCC=CCCCC(O)=O HXWJFEZDFPRLBG-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012615 aggregate Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- JAZBEHYOTPTENJ-JLNKQSITSA-N all-cis-5,8,11,14,17-icosapentaenoic acid Chemical compound CC\C=C/C\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O JAZBEHYOTPTENJ-JLNKQSITSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- IJTNSXPMYKJZPR-WVRBZULHSA-N alpha-parinaric acid Natural products CCC=C/C=C/C=C/C=CCCCCCCCC(=O)O IJTNSXPMYKJZPR-WVRBZULHSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 235000021342 arachidonic acid Nutrition 0.000 description 1
- 229940114079 arachidonic acid Drugs 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SECPZKHBENQXJG-UHFFFAOYSA-N cis-palmitoleic acid Natural products CCCCCCC=CCCCCCCCC(O)=O SECPZKHBENQXJG-UHFFFAOYSA-N 0.000 description 1
- GWHCXVQVJPWHRF-UHFFFAOYSA-N cis-tetracosenoic acid Natural products CCCCCCCCC=CCCCCCCCCCCCCCC(O)=O GWHCXVQVJPWHRF-UHFFFAOYSA-N 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229960005135 eicosapentaenoic acid Drugs 0.000 description 1
- 235000020673 eicosapentaenoic acid Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-QXMHVHEDSA-N gadoleic acid Chemical compound CCCCCCCCCC\C=C/CCCCCCCC(O)=O LQJBNNIYVWPHFW-QXMHVHEDSA-N 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920001184 polypeptide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 102000004196 processed proteins & peptides Human genes 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000003190 viscoelastic substance Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0013—Liquid compositions with insoluble particles in suspension
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0017—Multi-phase liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Description
Claims (23)
- 洗浄方法であって、
粒子が付着した表面を有する基板を前記粒子が付着した表面が上になるように準備する工程と、
固体部分と、液体部分と、気体部分とを備えた三相体を生成する工程と、
前記基板の上方から前記三相体を供給する工程と、
前記三相体に力を加えて、前記固体部分と前記粒子との間の相互作用を促進する工程と、
前記粒子との前記相互作用によって、前記粒子が前記三相体と共に除去されるように、前記基板の前記表面から前記粒子と共に前記三相体を除去する工程と、を備える、洗浄方法。 - 請求項1に記載の洗浄方法であって、前記相互作用は、前記粒子と、前記三相体の前記固体部分との間の結合またはモーメント伝達の一方である、洗浄方法。
- 請求項1に記載の洗浄方法であって、前記結合は、付着または反発の一方である、洗浄方法。
- 請求項1に記載の洗浄方法であって、前記液体部分と、前記気体部分とは、封入輸送体を形成し、前記気体部分は、前記三相体の5% から99.9% の体積を占める、洗浄方法。
- 請求項4に記載の洗浄方法であって、
前記気体部分は、
オゾン(O3)と、酸素(O2)と、塩酸(HCl)と、フッ化水素酸(HF)と、窒素(N2)と、アルゴン(Ar)との混合気体、
オゾン(O3)と、窒素(N2)との混合気体、
オゾン(O3)と、アルゴン(Ar)との混合気体、
オゾン(O3)と、酸素(O2)と、窒素(N2)との混合気体、
オゾン(O3)と、酸素(O2)と、アルゴン(Ar)との混合気体、
オゾン(O3)と、酸素(O2)と、窒素(N2)と、アルゴン(Ar)との混合気体、および、
酸素(O2)と、アルゴン(Ar)と、窒素(N2)との混合気体、
の内の1つである、洗浄方法。 - 請求項4に記載の洗浄方法であって、前記封入輸送体は、他の封入輸送体と共に泡を形成し、これらの封入輸送体は、前記固体部分が、前記粒子に近接して、前記固体部分と、前記基板の前記表面上の前記粒子との間の前記相互作用を促進するように力を加える、洗浄方法。
- 請求項1に記載の洗浄方法であって、前記固体部分は、気相および液相以外の状態である、洗浄方法。
- 請求項7に記載の洗浄方法であって、前記固体部分は、脂肪酸を備える、洗浄方法。
- 請求項1に記載の洗浄方法であって、前記三相体の上に位置する隣接した三相体が、前記力を加える、洗浄方法。
- 基板前処理用洗浄剤であって、
液体成分と、
前記液体成分の中に分散された複数の固体で構成された固体成分と、
前記液体成分および前記固体成分と混合されることで、前記洗浄剤を前記基板に供給される状態に保つ気体成分と、を備え、
前記基板に対して上方から供給される、基板前処理用洗浄剤。 - 請求項10に記載の基板前処理用洗浄剤であって、前記液体成分は、塩基を備える、基板前処理用洗浄剤。
- 請求項11に記載の基板前処理用洗浄剤であって、前記塩基は、水酸化アンモニウムと、水酸化カリウムと、水酸化ナトリウムと、水酸化テトラメチルアンモニウムと、からなる群から選択された塩基水溶液である、基板前処理用洗浄剤。
- 請求項10に記載の基板前処理用洗浄剤であって、前記固体成分は、脂肪酸または脂肪酸塩である、基板前処理用洗浄剤。
- 請求項10に記載の基板前処理用洗浄剤であって、前記複数の固体は、発泡防止剤として機能する、基板前処理用洗浄剤。
- 請求項13に記載の基板前処理用洗浄剤であって、前記脂肪酸は、界面活性剤として機能する、基板前処理用洗浄剤。
- 請求項13に記載の基板前処理用洗浄剤であって、前記脂肪酸は、ステアリン酸(CH3(CH2)16COOH)と、パルミチン酸と、オレイン酸と、からなる群から選択される、基板前処理用洗浄剤。
- 請求項10に記載の基板前処理用洗浄剤であって、前記固体成分は、カルボン酸、スルホン酸、または、ホスホン酸を有する、基板前処理用洗浄剤。
- 洗浄方法であって、
粒子が付着した表面を有する基板を前記粒子が付着した表面が上になるように準備する工程と、
実質的に固相の界面活性剤と、液相の液体部分と、気相の気体部分とを備える三相体を、前記基板への供給に先立って生成する工程と、
前記界面活性剤が前記粒子と相互作用するように、前記基板の上方から前記表面に前記三相体を供給する工程と、
前記界面活性剤と前記粒子との間の前記相互作用によって、前記粒子が前記三相体と共に除去されるように、前記基板の前記表面から前記粒子と共に前記三相体を除去する工程と、を備える、洗浄方法。 - 請求項18に記載の洗浄方法であって、前記液体部分と、前記気体部分とは、封入輸送体を形成し、前記気体部分は、前記三相体の5% から99.9% の体積を占める、洗浄方法。
- 請求項18に記載の洗浄方法であって、前記相互作用は、前記粒子と、前記三相体の前記界面活性剤との間の結合である、洗浄方法。
- 請求項19に記載の洗浄方法であって、前記封入輸送体は、他の封入輸送体と共に泡を形成し、前記泡の状態の前記封入輸送体は、前記界面活性剤が、前記粒子に近接して、前記界面活性剤と、前記基板の前記表面上の前記粒子との間の前記相互作用を開始するように、前記界面活性剤に対して力を加える、洗浄方法。
- 請求項21に記載の洗浄方法であって、前記界面活性剤は、前記液体部分の中に分布されることにより、それぞれカルボキシル基が一端に結合した複数の炭化水素鎖が、懸濁して、前記複数の炭化水素鎖の間でフロック形成しない状態になる、洗浄方法。
- 請求項22に記載の洗浄方法であって、さらに、
前記三相体に塩基を加えることにより、前記界面活性剤の前記懸濁を促進する工程を備える、洗浄方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75537705P | 2005-12-30 | 2005-12-30 | |
US60/755377 | 2005-12-30 | ||
US11/532491 | 2006-09-15 | ||
US11/532,491 US7862662B2 (en) | 2005-12-30 | 2006-09-15 | Method and material for cleaning a substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007208246A JP2007208246A (ja) | 2007-08-16 |
JP2007208246A5 JP2007208246A5 (ja) | 2010-02-18 |
JP5060782B2 true JP5060782B2 (ja) | 2012-10-31 |
Family
ID=37997740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006353539A Expired - Fee Related JP5060782B2 (ja) | 2005-12-30 | 2006-12-28 | 基板を洗浄するための方法および材料 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7862662B2 (ja) |
EP (1) | EP1803804B1 (ja) |
JP (1) | JP5060782B2 (ja) |
KR (1) | KR101414429B1 (ja) |
MY (1) | MY152543A (ja) |
SG (1) | SG133541A1 (ja) |
TW (1) | TWI392001B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7737097B2 (en) * | 2003-06-27 | 2010-06-15 | Lam Research Corporation | Method for removing contamination from a substrate and for making a cleaning solution |
US7862662B2 (en) * | 2005-12-30 | 2011-01-04 | Lam Research Corporation | Method and material for cleaning a substrate |
US8084406B2 (en) | 2007-12-14 | 2011-12-27 | Lam Research Corporation | Apparatus for particle removal by single-phase and two-phase media |
US8105997B2 (en) * | 2008-11-07 | 2012-01-31 | Lam Research Corporation | Composition and application of a two-phase contaminant removal medium |
US8739805B2 (en) * | 2008-11-26 | 2014-06-03 | Lam Research Corporation | Confinement of foam delivered by a proximity head |
CA2856196C (en) | 2011-12-06 | 2020-09-01 | Masco Corporation Of Indiana | Ozone distribution in a faucet |
US10767143B2 (en) | 2014-03-06 | 2020-09-08 | Sage Electrochromics, Inc. | Particle removal from electrochromic films using non-aqueous fluids |
WO2017112795A1 (en) | 2015-12-21 | 2017-06-29 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
US20170254217A1 (en) * | 2016-03-01 | 2017-09-07 | General Electric Company | Dry Detergent For Cleaning Gas Turbine Engine Components |
Family Cites Families (150)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL251243A (ja) * | 1959-05-04 | |||
US3212762A (en) | 1960-05-23 | 1965-10-19 | Dow Chemical Co | Foam generator |
US3167095A (en) * | 1961-02-02 | 1965-01-26 | Dover Corp | Automatic shut-off loading valve |
US3436262A (en) * | 1964-09-25 | 1969-04-01 | Dow Chemical Co | Cleaning by foam contact,and foam regeneration method |
US3617095A (en) | 1967-10-18 | 1971-11-02 | Petrolite Corp | Method of transporting bulk solids |
US3978176A (en) * | 1972-09-05 | 1976-08-31 | Minnesota Mining And Manufacturing Company | Sparger |
GB1507472A (en) * | 1974-05-02 | 1978-04-12 | Bunker Ramo | Foamable coating remover composition |
US4156619A (en) * | 1975-06-11 | 1979-05-29 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for cleaning semi-conductor discs |
US4133773A (en) * | 1977-07-28 | 1979-01-09 | The Dow Chemical Company | Apparatus for making foamed cleaning solutions and method of operation |
US4238244A (en) | 1978-10-10 | 1980-12-09 | Halliburton Company | Method of removing deposits from surfaces with a gas agitated cleaning liquid |
US4283244A (en) * | 1979-10-01 | 1981-08-11 | Sherwood Medical Industries Inc. | Method of making fabric-lined articles |
US4838289A (en) * | 1982-08-03 | 1989-06-13 | Texas Instruments Incorporated | Apparatus and method for edge cleaning |
US4911761A (en) * | 1984-05-21 | 1990-03-27 | Cfm Technologies Research Associates | Process and apparatus for drying surfaces |
ES2011470B3 (es) * | 1986-07-08 | 1990-01-16 | Kohlensaurewerk Deutschland Gmbh | Procedimiento para la disgregacion de sustancias volatiles |
NL8601939A (nl) | 1986-07-28 | 1988-02-16 | Philips Nv | Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat. |
US4817652A (en) * | 1987-03-26 | 1989-04-04 | Regents Of The University Of Minnesota | System for surface and fluid cleaning |
US4962776A (en) | 1987-03-26 | 1990-10-16 | Regents Of The University Of Minnesota | Process for surface and fluid cleaning |
US4849027A (en) * | 1987-04-16 | 1989-07-18 | Simmons Bobby G | Method for recycling foamed solvents |
US5105556A (en) * | 1987-08-12 | 1992-04-21 | Hitachi, Ltd. | Vapor washing process and apparatus |
US5048549A (en) * | 1988-03-02 | 1991-09-17 | General Dynamics Corp., Air Defense Systems Div. | Apparatus for cleaning and/or fluxing circuit card assemblies |
US5181985A (en) * | 1988-06-01 | 1993-01-26 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the wet-chemical surface treatment of semiconductor wafers |
US5357991A (en) * | 1989-03-27 | 1994-10-25 | Semitool, Inc. | Gas phase semiconductor processor with liquid phase mixing |
US5000795A (en) * | 1989-06-16 | 1991-03-19 | At&T Bell Laboratories | Semiconductor wafer cleaning method and apparatus |
US5102777A (en) * | 1990-02-01 | 1992-04-07 | Ardrox Inc. | Resist stripping |
US5271774A (en) | 1990-03-01 | 1993-12-21 | U.S. Philips Corporation | Method for removing in a centrifuge a liquid from a surface of a substrate |
DE69102311T2 (de) * | 1990-03-07 | 1994-09-29 | Hitachi Ltd | Vorrichtung und Verfahren zur Oberflächenreinigung. |
DE4038587A1 (de) | 1990-12-04 | 1992-06-11 | Hamatech Halbleiter Maschinenb | Transportvorrichtung fuer substrate |
US5306350A (en) * | 1990-12-21 | 1994-04-26 | Union Carbide Chemicals & Plastics Technology Corporation | Methods for cleaning apparatus using compressed fluids |
US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
US5175124A (en) | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
US5242669A (en) * | 1992-07-09 | 1993-09-07 | The S. A. Day Mfg. Co., Inc. | High purity potassium tetrafluoroaluminate and method of making same |
US5288332A (en) * | 1993-02-05 | 1994-02-22 | Honeywell Inc. | A process for removing corrosive by-products from a circuit assembly |
US5336371A (en) * | 1993-03-18 | 1994-08-09 | At&T Bell Laboratories | Semiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflow |
US5911837A (en) * | 1993-07-16 | 1999-06-15 | Legacy Systems, Inc. | Process for treatment of semiconductor wafers in a fluid |
US5464480A (en) | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
US5472502A (en) | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
US5950645A (en) | 1993-10-20 | 1999-09-14 | Verteq, Inc. | Semiconductor wafer cleaning system |
US5518542A (en) | 1993-11-05 | 1996-05-21 | Tokyo Electron Limited | Double-sided substrate cleaning apparatus |
US5938504A (en) * | 1993-11-16 | 1999-08-17 | Applied Materials, Inc. | Substrate polishing apparatus |
JP3057163B2 (ja) * | 1993-12-08 | 2000-06-26 | 東京エレクトロン株式会社 | 洗浄方法及び洗浄装置 |
US5417768A (en) * | 1993-12-14 | 1995-05-23 | Autoclave Engineers, Inc. | Method of cleaning workpiece with solvent and then with liquid carbon dioxide |
EP0681317B1 (en) * | 1994-04-08 | 2001-10-17 | Texas Instruments Incorporated | Method for cleaning semiconductor wafers using liquefied gases |
US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
EP0692318B1 (en) | 1994-06-28 | 2001-09-12 | Ebara Corporation | Method of and apparatus for cleaning workpiece |
US6081650A (en) * | 1994-06-30 | 2000-06-27 | Thomson Licensing S.A. | Transport processor interface and video recorder/playback apparatus in a field structured datastream suitable for conveying television information |
US5705223A (en) * | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
US5772784A (en) * | 1994-11-14 | 1998-06-30 | Yieldup International | Ultra-low particle semiconductor cleaner |
US5660642A (en) * | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
JP3504023B2 (ja) * | 1995-05-26 | 2004-03-08 | 株式会社ルネサステクノロジ | 洗浄装置および洗浄方法 |
US5792218A (en) * | 1995-06-07 | 1998-08-11 | The Clorox Company | N-alkyl ammonium acetonitrile activators in dense gas cleaning and method |
US5968285A (en) | 1995-06-07 | 1999-10-19 | Gary W. Ferrell | Methods for drying and cleaning of objects using aerosols and inert gases |
US5964958A (en) | 1995-06-07 | 1999-10-12 | Gary W. Ferrell | Methods for drying and cleaning objects using aerosols |
US6532976B1 (en) * | 1995-07-10 | 2003-03-18 | Lg Semicon Co., Ltd. | Semiconductor wafer cleaning apparatus |
DE19622015A1 (de) * | 1996-05-31 | 1997-12-04 | Siemens Ag | Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage |
TW416987B (en) * | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
US6092538A (en) * | 1996-09-25 | 2000-07-25 | Shuzurifuresher Kaihatsukyodokumiai | Method for using high density compressed liquefied gases in cleaning applications |
US5997653A (en) | 1996-10-07 | 1999-12-07 | Tokyo Electron Limited | Method for washing and drying substrates |
US5858283A (en) * | 1996-11-18 | 1999-01-12 | Burris; William Alan | Sparger |
US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US5900191A (en) * | 1997-01-14 | 1999-05-04 | Stable Air, Inc. | Foam producing apparatus and method |
US6551409B1 (en) * | 1997-02-14 | 2003-04-22 | Interuniversitair Microelektronica Centrum, Vzw | Method for removing organic contaminants from a semiconductor surface |
US5800626A (en) * | 1997-02-18 | 1998-09-01 | International Business Machines Corporation | Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates |
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
JPH10321572A (ja) * | 1997-05-15 | 1998-12-04 | Toshiba Corp | 半導体ウェーハの両面洗浄装置及び半導体ウェーハのポリッシング方法 |
JPH1126423A (ja) * | 1997-07-09 | 1999-01-29 | Sugai:Kk | 半導体ウエハ等の処理方法並びにその処理装置 |
US6152805A (en) | 1997-07-17 | 2000-11-28 | Canon Kabushiki Kaisha | Polishing machine |
US5932493A (en) * | 1997-09-15 | 1999-08-03 | International Business Machines Corporaiton | Method to minimize watermarks on silicon substrates |
EP0905746A1 (en) | 1997-09-24 | 1999-03-31 | Interuniversitair Micro-Elektronica Centrum Vzw | Method of removing a liquid from a surface of a rotating substrate |
US6398975B1 (en) * | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
US5904156A (en) * | 1997-09-24 | 1999-05-18 | International Business Machines Corporation | Dry film resist removal in the presence of electroplated C4's |
US6491764B2 (en) | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
JP3039493B2 (ja) | 1997-11-28 | 2000-05-08 | 日本電気株式会社 | 基板の洗浄方法及び洗浄溶液 |
US6270584B1 (en) * | 1997-12-03 | 2001-08-07 | Gary W. Ferrell | Apparatus for drying and cleaning objects using controlled aerosols and gases |
US6049996A (en) * | 1998-07-10 | 2000-04-18 | Ball Semiconductor, Inc. | Device and fluid separator for processing spherical shaped devices |
US5944581A (en) * | 1998-07-13 | 1999-08-31 | Ford Motor Company | CO2 cleaning system and method |
JP2000040681A (ja) * | 1998-07-21 | 2000-02-08 | Tamotsu Mesaki | 半導体材料等の処理方法 |
JP3003684B1 (ja) * | 1998-09-07 | 2000-01-31 | 日本電気株式会社 | 基板洗浄方法および基板洗浄液 |
JP2000100801A (ja) | 1998-09-25 | 2000-04-07 | Sumitomo Electric Ind Ltd | エピタキシャルウェハおよびその製造方法ならびにそれに用いられる化合物半導体基板の表面清浄化方法 |
JP2000141215A (ja) * | 1998-11-05 | 2000-05-23 | Sony Corp | 平坦化研磨装置及び平坦化研磨方法 |
JP2000265945A (ja) | 1998-11-10 | 2000-09-26 | Uct Kk | 薬液供給ポンプ、薬液供給装置、薬液供給システム、基板洗浄装置、薬液供給方法、及び基板洗浄方法 |
US6090217A (en) * | 1998-12-09 | 2000-07-18 | Kittle; Paul A. | Surface treatment of semiconductor substrates |
JP2000260739A (ja) * | 1999-03-11 | 2000-09-22 | Kokusai Electric Co Ltd | 基板処理装置および基板処理方法 |
US6290780B1 (en) * | 1999-03-19 | 2001-09-18 | Lam Research Corporation | Method and apparatus for processing a wafer |
US6272712B1 (en) * | 1999-04-02 | 2001-08-14 | Lam Research Corporation | Brush box containment apparatus |
JP4247587B2 (ja) | 1999-06-23 | 2009-04-02 | Jsr株式会社 | 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法 |
US6562726B1 (en) * | 1999-06-29 | 2003-05-13 | Micron Technology, Inc. | Acid blend for removing etch residue |
US6235693B1 (en) * | 1999-07-16 | 2001-05-22 | Ekc Technology, Inc. | Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices |
US20020121290A1 (en) * | 1999-08-25 | 2002-09-05 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
US6734121B2 (en) * | 1999-09-02 | 2004-05-11 | Micron Technology, Inc. | Methods of treating surfaces of substrates |
US6228563B1 (en) * | 1999-09-17 | 2001-05-08 | Gasonics International Corporation | Method and apparatus for removing post-etch residues and other adherent matrices |
US7122126B1 (en) | 2000-09-28 | 2006-10-17 | Materials And Technologies Corporation | Wet processing using a fluid meniscus, apparatus and method |
US6858089B2 (en) * | 1999-10-29 | 2005-02-22 | Paul P. Castrucci | Apparatus and method for semiconductor wafer cleaning |
US6576066B1 (en) * | 1999-12-06 | 2003-06-10 | Nippon Telegraph And Telephone Corporation | Supercritical drying method and supercritical drying apparatus |
US6264125B1 (en) * | 1999-12-09 | 2001-07-24 | Brunswick Corporation | Asymmetric oscillation mechanism for a spinning reel |
US6286231B1 (en) * | 2000-01-12 | 2001-09-11 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
US6276459B1 (en) * | 2000-02-01 | 2001-08-21 | Bradford James Herrick | Compressed air foam generator |
US6527915B2 (en) * | 2000-03-23 | 2003-03-04 | Hercules Incorporated | Proteins for use as pitch and stickies control agents in pulp and papermaking processes |
US6594847B1 (en) * | 2000-03-28 | 2003-07-22 | Lam Research Corporation | Single wafer residue, thin film removal and clean |
US6457199B1 (en) | 2000-10-12 | 2002-10-01 | Lam Research Corporation | Substrate processing in an immersion, scrub and dry system |
ES2288998T3 (es) * | 2000-05-17 | 2008-02-01 | Henkel Kommanditgesellschaft Auf Aktien | Cuerpos moldeados de detergentes o productos de limpieza. |
US6927176B2 (en) * | 2000-06-26 | 2005-08-09 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
US6488040B1 (en) * | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
KR100366623B1 (ko) * | 2000-07-18 | 2003-01-09 | 삼성전자 주식회사 | 반도체 기판 또는 lcd 기판의 세정방법 |
US6810887B2 (en) * | 2000-08-11 | 2004-11-02 | Chemtrace Corporation | Method for cleaning semiconductor fabrication equipment parts |
US6328042B1 (en) * | 2000-10-05 | 2001-12-11 | Lam Research Corporation | Wafer cleaning module and method for cleaning the surface of a substrate |
US20020094684A1 (en) * | 2000-11-27 | 2002-07-18 | Hirasaki George J. | Foam cleaning process in semiconductor manufacturing |
US6525009B2 (en) * | 2000-12-07 | 2003-02-25 | International Business Machines Corporation | Polycarboxylates-based aqueous compositions for cleaning of screening apparatus |
US6596093B2 (en) * | 2001-02-15 | 2003-07-22 | Micell Technologies, Inc. | Methods for cleaning microelectronic structures with cyclical phase modulation |
US6493902B2 (en) | 2001-02-22 | 2002-12-17 | Chung-Yi Lin | Automatic wall cleansing apparatus |
US7451941B2 (en) * | 2001-03-13 | 2008-11-18 | Jackson David P | Dense fluid spray cleaning process and apparatus |
JP2002280343A (ja) | 2001-03-15 | 2002-09-27 | Nec Corp | 洗浄処理装置、切削加工装置 |
JP2002280330A (ja) | 2001-03-21 | 2002-09-27 | Lintec Corp | チップ状部品のピックアップ方法 |
US6627550B2 (en) * | 2001-03-27 | 2003-09-30 | Micron Technology, Inc. | Post-planarization clean-up |
JP2002309638A (ja) | 2001-04-17 | 2002-10-23 | Takiron Co Ltd | 建物の排水管路における通気性掃除口 |
JP3511514B2 (ja) * | 2001-05-31 | 2004-03-29 | エム・エフエスアイ株式会社 | 基板浄化処理装置、ディスペンサー、基板保持機構、基板の浄化処理用チャンバー、及びこれらを用いた基板の浄化処理方法 |
US6802911B2 (en) | 2001-09-19 | 2004-10-12 | Samsung Electronics Co., Ltd. | Method for cleaning damaged layers and polymer residue from semiconductor device |
AU2002342866A1 (en) * | 2001-11-19 | 2003-06-10 | Unilever N.V. | Improved washing system |
US20030171239A1 (en) * | 2002-01-28 | 2003-09-11 | Patel Bakul P. | Methods and compositions for chemically treating a substrate using foam technology |
JP2003282513A (ja) | 2002-03-26 | 2003-10-03 | Seiko Epson Corp | 有機物剥離方法及び有機物剥離装置 |
JP4294910B2 (ja) * | 2002-03-27 | 2009-07-15 | 株式会社東芝 | 半導体デバイス製造プラントにおける物質供給システム |
JP4570008B2 (ja) | 2002-04-16 | 2010-10-27 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
US20040159335A1 (en) * | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
US6846380B2 (en) * | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
US20040002430A1 (en) * | 2002-07-01 | 2004-01-01 | Applied Materials, Inc. | Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use |
US6733596B1 (en) * | 2002-12-23 | 2004-05-11 | Lam Research Corporation | Substrate cleaning brush preparation sequence, method, and system |
US20040163681A1 (en) * | 2003-02-25 | 2004-08-26 | Applied Materials, Inc. | Dilute sulfuric peroxide at point-of-use |
US6951042B1 (en) | 2003-02-28 | 2005-10-04 | Lam Research Corporation | Brush scrubbing-high frequency resonating wafer processing system and methods for making and implementing the same |
US20040261823A1 (en) | 2003-06-27 | 2004-12-30 | Lam Research Corporation | Method and apparatus for removing a target layer from a substrate using reactive gases |
US7696141B2 (en) * | 2003-06-27 | 2010-04-13 | Lam Research Corporation | Cleaning compound and method and system for using the cleaning compound |
US7648584B2 (en) * | 2003-06-27 | 2010-01-19 | Lam Research Corporation | Method and apparatus for removing contamination from substrate |
US7799141B2 (en) * | 2003-06-27 | 2010-09-21 | Lam Research Corporation | Method and system for using a two-phases substrate cleaning compound |
US7737097B2 (en) * | 2003-06-27 | 2010-06-15 | Lam Research Corporation | Method for removing contamination from a substrate and for making a cleaning solution |
US6946396B2 (en) | 2003-10-30 | 2005-09-20 | Nissan Chemical Indusries, Ltd. | Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer |
US7202175B2 (en) * | 2003-11-07 | 2007-04-10 | Industrial Technology Research Institute | Method and apparatus for treating a substrate surface by bubbling |
KR20050044085A (ko) * | 2003-11-07 | 2005-05-12 | 삼성전자주식회사 | 집적회로 소자의 세정액 및 그 세정액을 이용한 세정방법 |
US7353560B2 (en) * | 2003-12-18 | 2008-04-08 | Lam Research Corporation | Proximity brush unit apparatus and method |
US7568490B2 (en) * | 2003-12-23 | 2009-08-04 | Lam Research Corporation | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
US8043441B2 (en) | 2005-06-15 | 2011-10-25 | Lam Research Corporation | Method and apparatus for cleaning a substrate using non-Newtonian fluids |
US7416370B2 (en) | 2005-06-15 | 2008-08-26 | Lam Research Corporation | Method and apparatus for transporting a substrate using non-Newtonian fluid |
US8323420B2 (en) * | 2005-06-30 | 2012-12-04 | Lam Research Corporation | Method for removing material from semiconductor wafer and apparatus for performing the same |
US7862662B2 (en) * | 2005-12-30 | 2011-01-04 | Lam Research Corporation | Method and material for cleaning a substrate |
JP2005194294A (ja) | 2003-12-26 | 2005-07-21 | Nec Electronics Corp | 洗浄液及び半導体装置の製造方法 |
CN1654617A (zh) * | 2004-02-10 | 2005-08-17 | 捷时雅株式会社 | 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法 |
JP4821122B2 (ja) * | 2004-02-10 | 2011-11-24 | Jsr株式会社 | 洗浄用組成物、半導体基板の洗浄方法および半導体装置の製造方法 |
US20050183740A1 (en) * | 2004-02-19 | 2005-08-25 | Fulton John L. | Process and apparatus for removing residues from semiconductor substrates |
US7247210B2 (en) * | 2004-02-23 | 2007-07-24 | Ecolab Inc. | Methods for treating CIP equipment and equipment for treating CIP equipment |
US8136423B2 (en) | 2005-01-25 | 2012-03-20 | Schukra of North America Co. | Multiple turn mechanism for manual lumbar support adjustment |
-
2006
- 2006-09-15 US US11/532,491 patent/US7862662B2/en not_active Expired - Fee Related
- 2006-11-30 EP EP06256133A patent/EP1803804B1/en not_active Not-in-force
- 2006-11-30 TW TW095144352A patent/TWI392001B/zh active
- 2006-12-04 MY MYPI20064619 patent/MY152543A/en unknown
- 2006-12-15 SG SG200608740-7A patent/SG133541A1/en unknown
- 2006-12-28 JP JP2006353539A patent/JP5060782B2/ja not_active Expired - Fee Related
- 2006-12-29 KR KR1020060138261A patent/KR101414429B1/ko not_active IP Right Cessation
-
2010
- 2010-11-17 US US12/948,613 patent/US8716210B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007208246A (ja) | 2007-08-16 |
SG133541A1 (en) | 2007-07-30 |
US20090308410A1 (en) | 2009-12-17 |
US20110065621A1 (en) | 2011-03-17 |
EP1803804A3 (en) | 2011-06-22 |
TW200733210A (en) | 2007-09-01 |
EP1803804A2 (en) | 2007-07-04 |
US7862662B2 (en) | 2011-01-04 |
MY152543A (en) | 2014-10-31 |
US8716210B2 (en) | 2014-05-06 |
TWI392001B (zh) | 2013-04-01 |
KR20070072418A (ko) | 2007-07-04 |
KR101414429B1 (ko) | 2014-07-01 |
EP1803804B1 (en) | 2013-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5060782B2 (ja) | 基板を洗浄するための方法および材料 | |
JP4892565B2 (ja) | 安定化流体溶液を使用した基板調製及び安定流体溶液作成方法 | |
US7696141B2 (en) | Cleaning compound and method and system for using the cleaning compound | |
US8608859B2 (en) | Method for removing contamination from a substrate and for making a cleaning solution | |
US8555903B2 (en) | Method and apparatus for removing contamination from substrate | |
US20080271749A1 (en) | Substrate cleaning technique employing multi-phase solution | |
KR101530394B1 (ko) | 세정 용액에 주기적 전단 응력을 인가함으로써 반도체 웨이퍼 표면을 세정하는 방법 | |
US8480810B2 (en) | Method and apparatus for particle removal |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091225 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091225 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110607 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110906 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110909 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120710 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120806 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150810 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |