CN102396050B - 从衬底除去污染物的方法和装置 - Google Patents
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Abstract
向衬底表面施加清洁流体。该清洁流体包括用于截留该衬底表面上存在的污染物的聚合材料。以受控速度向该衬底表面施加冲洗流体以从该衬底表面去除该清洁材料和该清洁材料中截留的污染物。该冲洗流体的该受控速度被设置为使该清洁流体在被该冲洗流体冲击时以弹性方式运行,从而改善从该衬底表面的污染物除去。
Description
背景技术
在半导体器件(比如集成电路、存储单元之类)制造中,执行一系列制造操作以在半导体晶圆(“晶圆”)上限定特征。该晶圆(或衬底)包括在硅衬底上限定的多层结构形式的集成电路器件。在衬底级上,形成具有扩散区的晶体管器件。在后续级中,互连金属化线路被图案化并被电气连接于该晶体管器件以限定期望的集成电路器件。而且,通过电介质材料将图案化的导电层与其它导电层绝缘。
在一系列制造操作过程中,该晶圆表面经受各种类型的污染物。基本上制造操作中存在的任何材料都是潜在的污染源。例如,污染源可包括工艺气体、化工品、沉积材料和流体及其它。各种污染物可能以微粒形式沉积在该晶圆表面上。如果不除去该微粒污染物,该污染物附近区域内的器件很可能无法工作。因此,有必要,以一种不破坏该晶圆上限定的特征的方式,从该晶圆表面清洁污染物。然而,微粒污染物的大小通常在该晶圆上制造的特征的临界尺寸(critical dimension size)量级上。除去这么小的微粒污染物而又不会对该晶圆上的特征造成负面影响是相当困难的。
发明内容
在一个实施方式中,公开一种从衬底清洁污染物的方法。该方法包括向衬底表面施加清洁材料的操作。该清洁材料包括用于截留该衬底表面上存在的污染物的一种或多种聚合材料。该方法还包括以受控速度向该衬底表面施加冲洗流体以从该衬底表面除去该清洁材料和该清洁材料内截留的污染物。该冲洗流体的该受控速度被设置为使该清洁材料在被该冲洗流体冲击时以弹性方式运行。
在另一个实施方式中,公开一种用于从衬底清洁污染物的系统。该系统包括被限定为支撑衬底的支撑结构。该系统还包括被限定为在支撑结构上方分发清洁材料的清洁材料分发装置,从而当该支撑结构上存在衬底时该清洁材料被施加在该衬底上方。该系统进一步包括被限定为朝该支撑结构引导冲洗流体的冲洗流体分发装置,从而当该支撑结构上存在衬底时该冲洗流体冲击该衬底。该冲洗流体分发装置被限定为将该冲洗流体的流速控制在使该清洁材料在被该冲洗流体冲击时以弹性方式运行的速度范围内。
在另一个实施方式中,公开一种用于从衬底清洁污染物的系统。该系统包括被限定为支撑衬底的支撑结构。该系统还包括被限定为在该支撑结构上方分发清洁材料的清洁材料分发装置,从而当该支撑结构上存在衬底时该清洁材料被施加在该衬底上方。该系统进一步包括被置于该支撑结构上方的邻近头,从而当该支撑结构上存在衬底时该邻近头的底面暴露于该衬底的顶面。该邻近头被限定为从该邻近头的底面分发冲洗流体并在该邻近头的底面施加真空抽吸。分发冲洗流体和施加真空抽吸用于当该邻近头下方的该支撑结构上存在衬底时在该邻近头的底面和该衬底的顶面之间形成流体弯液面。该邻近头被限定为将该冲洗流体的流速控制在使该清洁材料在被该冲洗流体冲击时以弹性方式运行的速度范围内。
通过下面结合附图进行的详细说明,本发明的其他方面和优点会变得显而易见,其中附图是使用本发明的实施例的方式进行描绘的。
附图说明
图1A显示了,依照本发明的一个实施方式,包括清洁溶液的液体清洁材料,该清洁溶液有聚合材料散布其中;
图1B显示了,依照本发明的一个实施方式,被截留在该液体清洁材料的聚合物内的许多污染物微粒;
图1C描绘了该清洁材料内的聚合物如何围绕器件结构滑动而不在该器件结构上施加损害力;
图1D显示了,依照本发明的一个实施方式,具有类凝胶聚合物液滴乳化在该清洁溶液中的液体清洁材料;
图1E显示了,依照本发明的一个实施方式,在清洁溶液中溶解有聚合物以形成类凝胶聚合物团块的液体清洁材料,该类凝胶聚合物团块在该清洁溶液内没有明显边界;
图1F显示了,依照本发明的一个实施方式,该清洁溶液内散布有气泡的清洁材料;
图2是,依照本发明的一个实施方式,显示用于从衬底清洁污染物的系统的图解;
图3是,依照本发明的一个实施方式,显示用于从衬底清洁污染物的方法的图解;
图4A显示了,依照本发明的一个实施方式的一个邻近头系统,该邻近头系统被限定为以可控速度向衬底表面施加冲洗流体以去除清洁材料和截留在清洁材料内的污染物;
图4B是,依照本发明的一个实施方式,显示位于该衬底上方的邻近头的横截面视图的图解;
图4C是,依照本发明的一个实施方式,显示该邻近头的仰视图的图解;以及
图4D是,依照本发明的另一个实施方式,显示该邻近头的仰视图的图解。
具体实施方式
在下面的描述中,阐明了许多具体细节以提供对本发明的完全理解。然而,显然,对本领域的技术人员来说,本发明可以无需这些具体细节中的一些或全部而实现。在其它情况下,没有对熟知的处理操作进行详细描述以免不必要地模糊本发明。
本文公开了一种用于从衬底上清洁污染物微粒的方法和装置。该方法包括对待清洁的衬底表面施加清洁材料。该清洁材料被限定为在该衬底上截留污染物微粒。冲洗流体被施加到该衬底表面以除去该清洁材料,同时除去截留在该清洁材料内的污染物微粒。该冲洗流体的流速被控制在一个足够高的速度从而从该冲洗流体到该清洁材料的动量传递使得该清洁材料以弹性方式运行。该清洁材料以弹性方式运行使得截留在该清洁材料内的污染物微粒保持被截留,并在该冲洗流体的冲击下与该清洁材料一起被从该衬底表面除去。
此处所指的衬底,表示而非限制于半导体晶圆、硬盘驱动器磁盘、光盘、玻璃衬底和平板显示表面、液晶显示表面等等,其在制造或加工操作过程中可能被污染。根据实际的衬底,表面可能以不同方式被污染,而污染的可接受的程度是在加工该衬底的特定行业中限定的。为了便于讨论,此处描述的衬底污染是指在该衬底表面上存在污染物微粒。然而,应当理解,本文所指的污染物微粒采用在基本上任何衬底处理和加工操作过程中可能接触衬底的基本上任何类型的污染物的形式。
在各种实施方式中,本文所公开的方法和装置可以用于从图案化衬底以及同样从非图案化衬底上清洁污染物微粒。在图案化衬底的情况下,待清洁的图案化衬底表面上的凸起结构可以对应于凸起连线,比如多晶硅连线或金属连线。而且,该待清洁图案化衬底表面可包括凹陷特征,比如化学机械抛光(CMP)处理过程产生的凹陷通孔。
图1A显示了,依照本发明的一个实施方式,包括清洁溶液105的液体清洁材料100,该清洁溶液105有聚合材料散布其中。该聚合材料是由大分子量的聚合物110限定的。在一个实施方式中,该液体清洁材料100是凝胶。在另一个实施方式中,该液体清洁材料100是溶胶,也就是说,液体内的固体微粒胶态悬浮物。在又一个实施方式中,该液体清洁材料100是液体溶液。该液体清洁材料100被限定为当施加到衬底上时从衬底上除去污染物微粒。
图1B显示了,依照本发明的一个实施方式,在液体清洁材料100的聚合物110内截留的许多污染物微粒120。大分子量(例如,分子量大于10,000g/mol)的聚合物110形成长聚合物链。这些长聚合物链变得彼此缠绕在一起以形成聚合网络,该聚合网络的作用是截留该衬底表面上的污染物微粒并阻止被截留的污染物微粒在从衬底表面除去后返回到该衬底表面。
聚合物110溶解在清洁溶液105中。清洁溶液105包括影响pH值并能提高聚合物110的可溶性的成分。溶解在清洁溶液105中的聚合物110可以是软凝胶或成为悬浮在清洁溶液105中的类凝胶液滴。而且,在一个实施方式中,多种类型的聚合物110可以同时溶解在清洁溶液105中。在一个实施方式中,该衬底表面上的污染物被离子力、van der Waals力、静电力、疏水作用、空间相互作用或化学键合附着于溶剂化的聚合物110。因此,当聚合物110被放入该污染物附近的作用范围内时,聚合物110捕获并截留该污染物。而且,液体清洁材料100被配制为在该清洁处理过程中温和(gentle)地存在于器件结构上。例如,如图1C所示,清洁材料100中的聚合物110可以围绕器件结构102滑动,而不在器件结构102上施加损害力。
具有大分子量聚合物的聚合材料的实施例包括但不限于:a)丙烯酸聚合物,比如聚丙烯酰胺(PAM),b)聚丙烯酸(PAA),比如聚羧乙烯940TM和聚羧乙烯941TM,c)聚-(N,N-二甲基-丙烯酰胺)(PDMAAm),d)聚-(N-异丙基-丙烯酰胺)(PIPAAm),e)聚甲基丙烯酸(PMAA),f)聚甲基丙烯酰胺(PMAAm),g)多聚胺和氧化物,比如聚乙烯亚胺(PEI)、聚环氧乙烷(PEO)、聚氧化丙烯(PPO)等等,h)乙烯基聚合物,比如聚乙烯醇(PVA)、聚乙烯磺酸(PESA)、聚乙烯胺(PVAm)、聚乙烯-吡咯烷酮(PVP)、聚-4-乙烯基吡啶(P4VP)等等,i)纤维素衍生物,比如甲基纤维素(MC),乙基纤维素(EC)、羟乙基纤维素(HEC)、羧甲基纤维素(CMC)等等,j)聚糖,比如刺槐(阿拉伯树胶)、琼脂和琼脂糖、肝磷脂、瓜耳胶、黄原胶等等,k)蛋白质,比如蛋白,胶原蛋白,谷蛋白等等。
至于示例性聚合物110的结构,聚丙烯酰胺(PAM)是由丙烯酰胺亚基形成的丙烯酸酯聚合物(-CH2CHCONH2-)n,其中“n”是整数。聚乙烯醇(PVA)是由乙烯醇亚基形成的聚合物(-CH2CHOH-)m,其中m是整数。聚丙烯酸(PAA)是由丙烯酸亚基形成的聚合物(-CH2=CH-COOH-)o,其中“o”是整数。该聚合材料中的大分子量聚合物110或者是可溶解于水成溶液的,或者是高度吸水的,以便在水成溶液中形成软凝胶。聚合物110可以溶解于该清洁溶液中、完全散布在该清洁溶液中、在该清洁溶液中形成液滴(乳化的)或在该清洁溶液中形成团块。
在一个实施方式中,该聚合材料的分子量大于100,000g/mol。在另一个实施方式中,该聚合材料的分子量在从约0.1M g/mol到约100M g/mol的范围内。在另一个实施方式中,该聚合化合物的分子量在从约1M g/mol到约20M g/mol的范围内。在又一个实施方式中,该聚合化合物的分子量在从约15M g/mol到约20M g/mol的范围内。
在一个实施方式中,清洁材料100中的聚合物110的重量百分比在从约0.001%到约20%的范围内。在另一个实施方式中,清洁材料100中的聚合物110的重量百分比在从约0.001%到约10%的范围内。在另一个实施方式中,清洁材料100中的聚合物110的重量百分比在从约0.01%到约10%的范围内。在又一个实施方式中,清洁材料100中的聚合物110的重量百分比在从约0.05%到约5%的范围内。
替代地,聚合物110可以是共聚物,其源自两种或多种单体物质。例如,共聚物分子可以包括90%的丙烯酰胺(AM)和10%的丙烯酸(AA)。另外,聚合物110可以是两种或多种类型的聚合物的混合物。例如,聚合物110可以是通过将两种类型的聚合物(比如90%的PAM和10%的PAA)在溶剂中混合而制成的。
在图1A-1C所示的示例性实施方式中,聚合物110均匀地溶解在清洁溶液105中。清洁溶液105的基液,或溶剂可以是一种非极性液体(比如松脂)或极性液体(比如水(H2O))。溶剂的其它实施例包括异丙醇(IPA)、二甲亚砜(DMSO)和二甲基甲酰胺(DMF)。在一个实施方式中,该溶剂是两种或多种液体的混合物。对于有极性的聚合物110,比如PAM、PAA或PVA,清洁溶液105的合适的溶剂是极性液体,比如水(H2O)。
在另一个实施方式中,清洁溶液105包括除了该溶剂(比如水)以外的化合物,以修改清洁材料100的性质。例如,清洁溶液105可以包括缓冲剂,缓冲剂可以是弱酸或弱碱,以调整清洁溶液105和相应的清洁材料100的酸碱度(pH)值。弱酸的一个实施例是柠檬酸。弱碱的一个实施例是铵(NH4OH)。清洁材料100的pH值的范围可以是从约1到约12。在一个实施方式中,对于前端应用(在铜和金属间电介质沉积之前),该清洁材料100是碱性的,pH指在从约7到约12的范围内。在另一个实施方式中,前端应用的pH值在从约8到约11的范围内。在又一个实施方式中,前端应用的pH值在约8到约10的范围内。
在一个实施方式中,对于后端处理(在铜和金属间电介质沉积之后),该清洁溶液可以是弱碱性、中性或酸性的。在一个实施方式中,后端应用的pH值在从约1到约7的范围内。在另一个实施方式中,后端应用的pH值在从约1到约5的范围内。在又一个实施方式中,后端应用的pH值在从约1到约2的范围内。
在一个实施方式中,该清洁溶液包括表面活性剂,比如十二烷基硫酸铵(ADS)以帮助在清洁溶液105中散布聚合物110。在一个实施方式中,该表面活性剂也帮助润湿该衬底表面上的清洁材料100。该衬底表面上的清洁材料100的润湿允许清洁材料100与该衬底表面和上面的污染物微粒进行紧密接触。润湿还改善了清洁效率。而且,也可以添加其它添加剂以改善表面润湿、衬底清洁、冲洗和其它相关性质。
在一个实施方式中,清洁溶液105被配制为缓冲溶液。例如,清洁溶液105可以被限定为缓冲铵溶液(BAS),缓冲铵溶液包括碱性和酸性缓冲剂,比如0.44wt%(重量百分比)的NH4OH和0.4wt%的柠檬酸。而且,该缓冲清洁溶液,比如BAS,可以包括一定量的表面活性剂,比如1wt%的ADS,以帮助聚合物110在清洁溶液105中的悬浮和散布。包含1wt%的ADS、0.44wt%的NH3和0.4wt%的柠檬酸的清洁溶液105在本文中被称为溶液“S100”。溶液“S100”和BAS两者都有约10的pH值。
图1D显示了,依照本发明的一个实施方式,具有乳化在清洁溶液105′中的类凝胶聚合物液滴140的液体清洁材料100′。清洁溶液105′还可包含小的和隔离的聚合物106。表面活性剂,比如ADS,可以被添加到清洁溶液105′以帮助类凝胶聚合物液滴140在整个清洁溶液105′的均匀散布。在图1D的示例性实施方式中,在清洁溶液105′和类凝胶聚合物液滴140之间出现边界141。类凝胶聚合物液滴140是软的,而且围绕该衬底表面上的器件特征变形。因为类凝胶聚合物液滴140围绕器件特征变形,所以它们不会在该器件特征上施加损害力。在一个实施方式中,类凝胶聚合物液滴140的直径在从约0.1μm(微米)到约100μm范围内。
图1E显示了,依照本发明的一个实施方式,在清洁溶液105″中溶解有聚合物以形成类凝胶聚合物团块150的液体清洁材料100″,类凝胶聚合物团块150在清洁溶液105″内没有明显的边界。清洁溶液105″还可以包含小的和隔离的聚合物106。类凝胶聚合物团块150是软的,而且围绕该衬底表面上的器件特征变形,并且不在该器件特征上施加损害力。在一个实施方式中,聚合物团块150的直径在从约0.1μm到约100μm的范围内。
上面讨论的清洁材料100、100′和100″都是液相的。在又一个实施方式中,清洁材料100、100′和100″可以通过添加气体(比如N2、惰性气体)或气体混合物(比如空气)而搅拌以将清洁材料100、100′和100″转化为泡沫。图1F显示了,依照本发明的一个实施方式,在清洁溶液105内散布有气泡160的清洁材料100*。该清洁材料可以包括聚合物链110、聚合物液滴140或聚合物团块150或其结合。应该理解,清洁材料100*包括气相部分和液相部分两者。
如图1A-1C所示,高分子量聚合物110的长链形成聚合网络,该聚合网络可包括或不包括聚合物交叉链接。如图1C中所示,聚合物110与该衬底表面上的污染物微粒(比如污染物微粒120I和120II)进行接触并截留该污染物微粒。在从该衬底表面除去污染物微粒后,该污染物微粒通过聚合物110的网络而悬浮在清洁材料100中。例如,图1C显示了通过分别附着于聚合物链111I和111II而悬浮在清洁材料100中的污染物微粒120III和120IV。应当理解,任何污染物微粒可以附着于该聚合网络内的多个聚合物链。
正如上面讨论的,该衬底上的污染物微粒变得被截留在该清洁材料的聚合物串/聚合物网络中。当该清洁材料被从该衬底除去时,截留在该清洁材料内的污染物微粒被从该衬底除去。例如,在一个实施方式中,污染物微粒和该衬底之间的粘结(bond)不会单独被该清洁材料破坏。在此实施方式中,从该冲洗流体到该清洁材料的动量传递提供了足够大的能量以将该污染物微粒和该衬底之间的粘结破坏。因此,从该衬底除去污染物微粒的效率取决于为了从该衬底除去该清洁材料而施加的冲洗流体的动量。
如下所述,该冲洗流体可以由许多不同密度的不同材料限定。因此,该冲洗流体速度是根据该冲洗流体密度设定的,以便实现能够从该衬底上除去清洁材料和截留于其中的污染物微粒的足够大的冲洗流体动量。高密度冲洗流体可以被施加有更低的速度以实现足够大的冲洗流体动量。相反,较低密度的冲洗流体可以被施加有更高的速度以实现足够大的冲洗流体动量。施加到该清洁材料的该冲洗流体的动量应当足够大到使该清洁材料以弹性方式运行,但是应当不会大到对该衬底和上面限定的特征造成损害。
应当理解,该冲洗流体的动量主要是由冲洗操作过程中该冲洗流体的速度控制的。因此,利用该清洁材料从该衬底除去污染物微粒可以通过冲洗流体速度的适当设置来加以控制。如同上面提到的,该冲洗流体速度应当足够高到使该清洁材料以弹性方式运行,而不损害该衬底。
如果该冲洗流体的速度太低,那么该冲洗流体和清洁材料之间的动量传递不足以使该清洁材料内的聚合物向该污染物微粒传递足够大的力而打破该污染物微粒和该衬底之间的粘着结合。而且,如果该冲洗流体速度太低,该冲洗流体可能稀释该清洁材料,从而允许污染物微粒从它们在清洁材料的聚合物内的截留中逃脱。如果该污染物微粒从它们在该清洁材料内的截留逃脱,该清洁材料会被从该衬底除去而不会从该衬底除去污染物。而且,如果该冲洗流体的速度太低,该清洁材料的残留物可能与该清洁材料的残留物内截留的污染物微粒一起留在该衬底上。
鉴于上文,应当理解,该冲洗流体的速度是利用该清洁材料从该衬底除去污染物微粒时的关键参数。在一个实施方式中,该冲洗流体的速度被控制在约1m/s(米每秒)。在另一个实施方式中,该冲洗流体的速度被控制在从0.5m/s到约10m/s的范围内。在又一个实施方式中,该冲洗流体的速度被控制在从0.1m/s到约100m/s的范围内。
如上所述,适当的冲洗流体速度部分依赖于该冲洗流体的密度,也就是说,依赖于该冲洗流体材料。该冲洗流体材料应该是与该清洁材料和待清洁衬底化学兼容的。在各种实施方式中,该冲洗流体可以是去离子水(DIW)、异丙醇(IPA)、二甲亚砜(DMSO)、二甲基甲酰胺(DMF)、醋酸二甲酯(DMAC)、氮气、易于与DIW混合的极性溶剂、雾化液体比如雾化的极性溶剂(DIW),或其任何结合。应当理解,上面确定的冲洗流体材料是以示例的方式提供的,不代表冲洗流体材料的排他集合。
图2是,依照本发明的一个实施方式,显示用于从衬底清洁污染物的系统的图解。该系统包括被限定为收集衬底清洁操作过程中分发的流体的槽201。衬底支撑结构203被置于槽201的内部容积内。衬底支撑结构203包括被限定为接收和支撑待清洁衬底207的顶面。该衬底支撑结构203的底面的质心区域固定于轴205。轴205连接于旋转机械239,旋转机械239可以被操作为旋转轴205,如箭头206所示,以带来衬底支撑结构203的相应旋转。在一个实施方式中,旋转机械239能够以从约500RPM(转每分钟)到约4000RPM范围内的旋转频率旋转轴205。在另一个实施方式中,旋转机械239能够以从约100RPM到约10000RPM范围内的旋转频率旋转轴205。
该系统还包括被限定为朝衬底支撑结构203(以及当衬底支撑结构203上存在衬底207时朝衬底207上)分发清洁材料217的清洁材料分发头213。清洁材料分发头213与清洁材料输送控制209流体连通。清洁流体输送控制209被限定为控制清洁材料从清洁材料储液槽231通过导管211向清洁材料分发头213的流动。在一个实施方式中,导管211被限定为刚性组件,比如刚性管。在另一个实施方式中,导管211被限定为挠性组件,比如挠性管。在各种实施方式中,导管211可以被限定为一种可移动的配置以使得清洁材料分发头213能够在衬底支撑结构203及其上的衬底207上方转移,如箭头215示例的。
该系统还包括被限定为朝衬底支撑结构203(以及当衬底支撑结构203上存在衬底207时朝衬底207上)分发冲洗流体227的冲洗流体分发头223。冲洗流体分发头223与冲洗流体输送控制219流体联通。冲洗流体输送控制219被限定为控制冲洗流体从冲洗流体储液槽229通过导管221到冲洗流体分发头223的流动。在一个实施方式中,导管221被限定为刚性组件,比如刚性管。在另一个实施方式中,导管221被限定为挠性组件,比如挠性管。在各种实施方式中,导管221可以被限定为一种可移动的配置以使得冲洗流体分发头223能够在衬底支撑结构203及其上的衬底207上方平移,如箭头225示例的。
冲洗流体分发头223被配置为以依照施加到该冲洗流体的压强所必需的受控速度朝衬底207分发冲洗流体227。在一个实施方式中,冲洗流体输送控制219装配有能够将导管221中的冲洗流体227的压强增加到必要的压强等级的增压器件。在各种实施方式中,冲洗流体分发头223可以被配置为单一喷嘴、连接于歧管的多个喷嘴或多开口冲洗头,以及其它。不管特定的冲洗流体分发头223实施方式如何,冲洗流体分发头223被配置为以一种受控样式并在受控流速下将冲洗流体227导向衬底207。
在一个实施方式中,该系统还包括与清洁材料输送控制209、冲洗流体输送控制219和旋转机械239中的每一个分别通过连接237、235和241电气连通的计算系统233。清洁材料输送控制209、冲洗流体输送控制219和旋转机械239中的每一个可以包括相应的数据获取/控制装置,该数据获取/控制装置被配置为从计算系统233接收控制信号并依照接收到的控制信号指导操作。而且,计算系统233可以被操作为执行图形用户界面(GUI),该图形用户界面被限定为提供虚拟控制以控制清洁材料输送控制209、冲洗流体输送控制219和旋转机械239中的每一个。而且,利用GUI计算系统233可以被编程以依照预定的衬底清洁配方(recipe)指导清洁材料输送控制209、冲洗流体输送控制219和旋转机械239。
在一个实施方式中,计算系统233可包括计算机可读介质,该计算机可读介质上存储有计算机可执行程序指令以指导从衬底清洁污染物的操作。该计算机可读介质可以包括指导清洁材料分发装置在衬底表面上方分发清洁材料的操作的程序指令。正如上面讨论的,在一个实施方式中,该清洁材料被限定为有聚丙烯酰胺溶解于其中的极性溶剂,以截留该衬底表面上存在的污染物。该计算机可读介质还可包括用于指导冲洗流体分发装置的操作的程序指令以指导冲洗流体以受控速度朝该衬底表面流动以影响清洁材料和该清洁材料内截留的污染物从该衬底表面的除去。该程序指令被限定为控制该冲洗流体的速度以使该清洁材料在被该冲洗流体冲击时以弹性方式运行。而且,在一个实施方式中,提供程序指令以指导该旋转机械在向该衬底表面施加冲洗流体的过程中旋转该衬底。
图3是,依照本发明的一个实施方式,显示用于从衬底清洁污染物的方法的图解。该方法包括向衬底表面施加清洁材料的操作301。在一个实施方式中,该清洁材料包括用于截留该衬底表面上存在的污染物的一种或多种聚合材料。在一个实施方式中,该清洁材料被限定为有聚丙烯酰胺溶解于其中的极性溶剂。
该方法还包括以受控速度向该衬底表面施加冲洗流体的操作303,以从该衬底表面去除该清洁材料和该清洁材料内截留的污染物。该冲洗流体的该受控速度被设置以使该清洁材料在受该冲洗流体冲击时以弹性方式运行。在一个实施方式中,该冲洗流体速度被控制在从约0.1米每秒到约100米每秒的范围内。在另一个实施方式中,该冲洗流体速度被控制在约1米每秒。由于冲洗流体动量对清洁效率的重要影响,该冲洗流体可以在该清洁材料被施加到该衬底表面之后立即施加到该衬底表面。
在各种实施方式中,该冲洗流体被限定为去离子水、异丙醇、二甲亚砜、二甲基甲酰胺、醋酸二甲酯、氮气、极性溶剂和雾化极性溶剂中的一种或多种。而且,在一个实施方式中,该冲洗流体被从置于该衬底上方的喷嘴分发。在从该喷嘴分发该冲洗流体时该喷嘴可以在该衬底上方平移。
该方法可进一步包括在向该衬底表面施加该冲洗流体的过程中旋转该衬底的操作305。在一个实施方式中,该衬底以在从约100转每分钟到约10000转每分钟的范围内的一个速度旋转。应当理解,该衬底的旋转可以在一些实施方式中使用,但不是所有实施方式都需要。
上面提到的计算机可读介质是能够储存数据的任何数据存储装置,其中该数据以后可以由计算机系统读取。计算机可读介质的实施例包括硬盘驱动器、网络附属存储器(NAS)、只读存储器、随机存取存储器、CD-ROM、CD-R、CD-RW、磁带及其它光学和非光学数据存储装置。另外的,如同上面提到的,被实现为计算机可读介质上的计算机可读代码的图形用户界面(GUI)可以被开发以提供执行本发明的任何实施方式的用户界面。
尽管上面参考图2讨论的示例性实施方式显示,冲洗流体分发头223通过导管221连接到冲洗流体输送控制219,然而应当理解,可以使用其它冲洗流体分发配置来向该衬底上分发冲洗流体。例如,图4A显示了依照本发明的一个实施方式的邻近头系统400,其被限定为以受控速度向该衬底表面施加该冲洗流体以除去该清洁材料和其中截留的污染物,如同上面参考操作303所描述的。
系统400包括邻近头405和衬底座401。在一个实施方式中,邻近头405以固定方式配置,而衬底座401被限定为使固定于其上的衬底403在邻近头405下方移动,如箭头415所示。然而,应当理解,在其它实施方式中,衬底座401可以是固定的,而邻近头405可以在衬底座401上方移动。而且,在一个实施方式中,邻近头405被限定为跨越衬底403的直径,从而衬底座401在邻近头405下方的一次通过就会使衬底403的整个顶面都经受邻近头405的处理。
系统400还包括冲洗流体供应407,冲洗流体供应407被限定为通过导管409向邻近头405供应冲洗流体227的受控流。系统400进一步包括真空源411,真空源411被限定为通过导管413向邻近头405施加真空。邻近头405被限定为以受控速度向衬底403的顶面施加冲洗流体227以去除该清洁材料和其中截留的污染物。邻近头405还被限定为通过真空源411从衬底403的顶面上除去施加的冲洗流体、清洁材料和其中截留的污染物。
图4B是,依照本发明的一个实施方式,显示当衬底403在邻近头405下方在方向415上移动时,置于衬底403上方的邻近头405的横截面视图的图解。邻近头405被限定为包括一个或多个位于中心的冲洗流体分发口422,通过这些冲洗流体分发口422使冲洗流体227朝衬底403流动,如箭头421所示。在一个实施方式中,冲洗流体分发口422是位于邻近头405的底面的中心的,其中邻近头405的底面面对衬底403的顶面。邻近头405还被限定为向许多真空口424施加来自真空源411的真空,那些真空口424是围绕冲洗流体分发口422和围绕邻近头405的底面外围限定的。以这种方式,施加的冲洗流体227、该清洁材料和其中截留的污染物通过真空口424被移动远离衬底403的顶面,如箭头423所示。
冲洗流体227通过冲洗流体分发口422的流动和被施加到真空口424的真空被控制以在邻近头405的底面和衬底403的顶面之间形成并保持流体弯液面427。在一个实施方式中,冲洗流体227被控制而以在从约1公升每分钟到约4公升每分钟范围内的一个流速流过冲洗流体分发口422。应该理解,冲洗流体分发口422的尺寸被限定为提供足够的冲洗流体227的流动以便足够大的动量从冲洗流体227转移到衬底403的顶面上存在的清洁材料,从而该清洁材料与该清洁材料内仍然截留的污染物一起被从衬底403除去。应该进一步理解,控制真空抽吸以补偿冲洗流体227通过邻近头405向衬底403的流动,以便保持弯液面427。
图4C是,依照本发明的一个实施方式,显示邻近头405的仰视图的图解。在此实施方式中,冲洗流体分发口422被限定为沿邻近头405的长位于中心的多个孔。在此实施方式中,真空口424被限定为围绕冲洗流体分发口422并在邻近头405的底面外围附近的多个孔。
图4D是,依照本发明的另一个实施方式,显示邻近头405的仰视图的图解。在此实施方式中,冲洗流体分发口422被限定为沿邻近头405的长位于中心的连续沟道。而且,在此实施方式中,真空口424被限定为被置于围绕冲洗流体分发口422并在邻近头405的底面外围附近的连续的环形沟道。应当理解,参考图4C和4D所公开的那些实施方式是用示例的方式提供的,而不是想要表示冲洗流体分发口422和真空口424的合理配置的排他集合。在其它实施方式中,邻近头405的冲洗流体分发口422和真空口424可被配置为用于以下目的的基本上任何形式:1)冲洗流体227向衬底403的足够受控流动,以便从衬底403除去该清洁材料和截留在该清洁材料中的污染物,以及2)以受控方式保持弯液面427。
尽管本发明是参照若干实施方式进行描述的,然而可以看出,本领域的技术人员在阅读前面的说明书并研究附图之后将能实现各种变更、增补、置换及其等同。因此,本发明意在包括所有这些变更、增补、置换和等同,均落入本发明的真实精神和范围。
Claims (19)
1.一种从衬底清洁污染物的方法,包含:
向衬底表面施加清洁材料,其中该清洁材料被限定为有聚丙烯酰胺溶解于其中的极性溶剂,以用于截留该衬底表面上存在的污染物;以及
以受控速度向该衬底表面施加冲洗流体以从该衬底表面除去该清洁材料和该清洁材料内截留的污染物,其中该冲洗流体的该受控速度被控制在从0.1米每秒到100米每秒的范围内以使该清洁材料在被该冲洗流体冲击时以弹性方式运行。
2.如权利要求1所述的方法,其中该冲洗流体速度被控制在1米每秒。
3.如权利要求1所述的方法,其中该冲洗流体被限定为去离子水。
4.如权利要求1所述的方法,其中该冲洗流体被限定为去离子水、异丙醇、二甲亚砜、二甲基甲酰胺、醋酸二甲酯、氮气和雾化极性溶剂中的一种或多种。
5.如权利要求1所述的方法,其中该冲洗流体被限定为极性溶剂。
6.如权利要求1所述的方法,进一步包含:
在向该衬底表面施加该冲洗流体的过程中旋转该衬底。
7.如权利要求6所述的方法,其中该衬底以在从100转每分钟到10000转每分钟的范围内的速度旋转。
8.如权利要求1所述的方法,其中该冲洗流体是从置于该衬底上方的喷嘴分发的。
9.如权利要求8所述的方法,进一步包含:
当从该喷嘴分发该冲洗流体时使该喷嘴在该衬底上方平移。
10.如权利要求1所述的方法,其中在该清洁材料被施加到该衬底表面之后马上将该冲洗流体施加到该衬底表面。
11.一种用于从衬底清洁污染物的系统,包含:
被限定为支撑衬底的支撑结构;
清洁材料储液槽;
设置在所述清洁材料储液槽中的清洁材料,其中该清洁材料是有聚丙烯酰胺溶解于其中的极性溶剂,以用于截留该衬底表面上存在的污染物;
被限定为在支撑结构上方分发清洁材料的清洁材料分发装置,从而当该支撑结构上存在衬底时该清洁材料被施加在该衬底上方;
被限定为朝该支撑结构引导冲洗流体的冲洗流体分发装置,从而当该支撑结构上存在衬底时该冲洗流体冲击该衬底,其中该冲洗流体分发装置被限定为将该冲洗流体的流速控制在从0.1米每秒到100米每秒的范围内以使该清洁材料在被该冲洗流体冲击时以弹性方式运行。
12.如权利要求11所述的系统,其中该冲洗流体是去离子水。
13.如权利要求11所述的系统,进一步包含:
与该清洁材料分发装置和该冲洗流体分发装置中的每一个电气连通的计算系统,其中该清洁材料分发装置和该冲洗流体分发装置中的每一个被限定为从该计算系统接收控制信号并分别依照接收到的控制信号指导清洁材料沉积和冲洗流体沉积操作。
14.如权利要求13所述的系统,进一步包含:
连接到该支撑结构的底面的质心区域的轴;以及
连接到该轴并被限定为以受控旋转速度旋转该轴以带来该支撑结构的相应旋转的旋转机械,其中该旋转机械与该计算系统电气连通,其中该旋转机械被限定为从该计算系统接收控制信号并依照接收到的控制信号指导该轴及其连接的支撑结构的旋转。
15.如权利要求14所述的系统,其中该旋转机械被配置为以在从100转每分钟到10000转每分钟的范围内的速度旋转该轴及其连接的支撑结构。
16.一种用于从衬底清洁污染物的系统,包含:
被限定为支撑衬底的支撑结构;
清洁材料储液槽;
设置在所述清洁材料储液槽中的清洁材料,其中该清洁材料是有聚丙烯酰胺溶解于其中的极性溶剂,以用于截留该衬底表面上存在的污染物;
被限定为在该支撑结构上方分发清洁材料的清洁材料分发装置,从而当该支撑结构上存在衬底时该清洁材料被施加在该衬底上方;以及
被置于该支撑结构上方的邻近头,从而当该支撑结构上存在衬底时该邻近头的底面暴露于该衬底的顶面,其中该邻近头被限定为从该邻近头的底面分发冲洗流体并在该邻近头的底面施加真空抽吸从而当该邻近头下方的该支撑结构上存在衬底时在该邻近头的底面和该衬底的顶面之间形成流体弯液面,其中该邻近头被限定为将该冲洗流体的流速控制在从0.1米每秒到100米每秒的范围内以使该清洁材料在被该冲洗流体冲击时以弹性方式运行。
17.如权利要求16所述的系统,其中该支撑结构被限定为当该冲洗流体和真空抽吸被施加在该邻近头的底面时使该衬底在该邻近头下方移动。
18.如权利要求16所述的系统,进一步包含:
与该邻近头流体连通的冲洗流体供应,该冲洗流体供应被限定为向该邻近头提供冲洗流体的流从而该冲洗流体以从1公升每分钟到4公升每分钟的范围内的流速被从该邻近头的底面排出。
19.如权利要求16所述的系统,其中该冲洗流体是去离子水。
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