TW583424B - Display device and the manufacturing method thereof - Google Patents

Display device and the manufacturing method thereof Download PDF

Info

Publication number
TW583424B
TW583424B TW091102108A TW91102108A TW583424B TW 583424 B TW583424 B TW 583424B TW 091102108 A TW091102108 A TW 091102108A TW 91102108 A TW91102108 A TW 91102108A TW 583424 B TW583424 B TW 583424B
Authority
TW
Taiwan
Prior art keywords
film
insulating film
region
channel region
drain
Prior art date
Application number
TW091102108A
Other languages
English (en)
Chinese (zh)
Inventor
Hideo Tanabe
Shigeo Shimomura
Makoto Ohkura
Masaaki Kurita
Taiichi Kimura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW583424B publication Critical patent/TW583424B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW091102108A 2001-02-06 2002-02-06 Display device and the manufacturing method thereof TW583424B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001029050 2001-02-06
JP2002019751A JP4037117B2 (ja) 2001-02-06 2002-01-29 表示装置

Publications (1)

Publication Number Publication Date
TW583424B true TW583424B (en) 2004-04-11

Family

ID=26608966

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091102108A TW583424B (en) 2001-02-06 2002-02-06 Display device and the manufacturing method thereof

Country Status (5)

Country Link
US (3) US6624443B2 (enExample)
JP (1) JP4037117B2 (enExample)
KR (1) KR100526731B1 (enExample)
CN (1) CN1185533C (enExample)
TW (1) TW583424B (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940732A (en) 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
JPH10135475A (ja) * 1996-10-31 1998-05-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2003257662A (ja) * 2002-03-04 2003-09-12 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置及びその製造方法
TW578308B (en) * 2003-01-09 2004-03-01 Au Optronics Corp Manufacturing method of thin film transistor
TWI222224B (en) * 2003-04-29 2004-10-11 Toppoly Optoelectronics Corp TFT structure and manufacturing method of the same
TWI222227B (en) * 2003-05-15 2004-10-11 Au Optronics Corp Method for forming LDD of semiconductor devices
EP1639403B1 (en) * 2003-06-04 2008-11-05 TPO Hong Kong Holding Limited Method for manufacturing liquid crystal display device
US7423343B2 (en) * 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
CN100369266C (zh) * 2003-09-29 2008-02-13 友达光电股份有限公司 控制薄膜晶体管及其制造方法与含其的电致发光显示装置
US7314785B2 (en) * 2003-10-24 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR101012718B1 (ko) * 2003-12-30 2011-02-09 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
JP2005197618A (ja) 2004-01-09 2005-07-21 Nec Corp 薄膜トランジスタ、薄膜トランジスタの形成方法ならびに表示デバイス、電子機器
JP2005217368A (ja) * 2004-02-02 2005-08-11 Toshiba Matsushita Display Technology Co Ltd 薄膜トランジスタおよびその製造方法
KR100579188B1 (ko) 2004-02-12 2006-05-11 삼성에스디아이 주식회사 엘디디 구조를 갖는 박막트랜지스터
CN100557512C (zh) * 2004-12-14 2009-11-04 中华映管股份有限公司 薄膜晶体管及其制造方法
CN100368912C (zh) * 2005-02-03 2008-02-13 广辉电子股份有限公司 液晶显示装置的制造方法
CN100368911C (zh) * 2005-02-03 2008-02-13 广辉电子股份有限公司 液晶显示装置
US7588970B2 (en) * 2005-06-10 2009-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007258453A (ja) * 2006-03-23 2007-10-04 Toshiba Matsushita Display Technology Co Ltd 薄膜トランジスタ、及びその製造方法
KR100770263B1 (ko) * 2006-05-03 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
KR100796609B1 (ko) * 2006-08-17 2008-01-22 삼성에스디아이 주식회사 Ｃｍｏｓ 박막 트랜지스터의 제조방법
KR100867921B1 (ko) * 2006-11-29 2008-11-10 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법
KR100811997B1 (ko) * 2006-12-04 2008-03-10 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조방법과 이를 포함한평판표시장치
KR100836472B1 (ko) 2007-03-22 2008-06-09 삼성에스디아이 주식회사 반도체장치 및 그 제조방법
US9105652B2 (en) * 2011-05-24 2015-08-11 Sharp Kabushiki Kaisha Method of manufacturing semiconductor device
CN103762166A (zh) * 2011-12-31 2014-04-30 广东中显科技有限公司 精确对准的搭桥晶粒多晶硅薄膜晶体管的制造方法
CN103779206A (zh) * 2011-12-31 2014-05-07 广东中显科技有限公司 一种搭桥晶粒多晶硅薄膜晶体管及其制造方法
JP5827970B2 (ja) * 2013-03-25 2015-12-02 株式会社ジャパンディスプレイ 表示装置及び電子機器
CN103178006B (zh) * 2013-03-29 2015-09-23 上海和辉光电有限公司 调整低温多晶硅晶体管阀值电压的方法
CN104240633B (zh) * 2013-06-07 2018-01-09 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及其制造方法
CN104241389B (zh) 2013-06-21 2017-09-01 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法
CN104241390B (zh) * 2013-06-21 2017-02-08 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法
US9530808B2 (en) * 2013-09-12 2016-12-27 Boe Technology Group Co., Ltd. TFT array substrate, manufacturing method thereof, and display device
TWI653755B (zh) * 2013-09-12 2019-03-11 日商新力股份有限公司 顯示裝置、其製造方法及電子機器
CN103531595B (zh) * 2013-10-31 2016-09-14 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管阵列基板及其制作方法、显示装置
TWI567452B (zh) * 2014-07-17 2017-01-21 群創光電股份有限公司 液晶顯示裝置及其元件基板
US9543335B2 (en) 2014-07-17 2017-01-10 Innolux Corporation Liquid-crystal display and element substrate thereof
CN104779168B (zh) * 2015-04-13 2018-01-12 武汉华星光电技术有限公司 用于制作薄膜晶体管的方法
CN105870199A (zh) * 2016-05-26 2016-08-17 深圳市华星光电技术有限公司 薄膜晶体管、薄膜晶体管的制备方法及cmos器件
CN106711087A (zh) * 2016-12-26 2017-05-24 武汉华星光电技术有限公司 薄膜晶体管的制作方法
CN106847927A (zh) * 2017-01-23 2017-06-13 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法、液晶面板
CN107026178B (zh) * 2017-04-28 2019-03-15 深圳市华星光电技术有限公司 一种阵列基板、显示装置及其制作方法
KR20180137642A (ko) * 2017-06-16 2018-12-28 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US10847739B2 (en) * 2017-09-21 2020-11-24 Sharp Kabushiki Kaisha Display device having larger openings on inner sides of anode electrodes in display region than on inner sides of anode electrodes in peripheral display region
CN107818948B (zh) * 2017-10-31 2020-04-17 京东方科技集团股份有限公司 一种阵列基板的制备方法
CN116247011B (zh) * 2023-05-10 2023-10-13 长鑫存储技术有限公司 半导体结构及其制造方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US5414442A (en) * 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2564725B2 (ja) 1991-12-24 1996-12-18 株式会社半導体エネルギー研究所 Ｍｏｓ型トランジスタの作製方法
EP0589478B1 (en) * 1992-09-25 1999-11-17 Sony Corporation Liquid crystal display device
US5279308A (en) 1993-02-19 1994-01-18 Graphic Controls Corporation Intrauterine pressure catheter system
JPH07131018A (ja) * 1993-06-23 1995-05-19 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
US6190933B1 (en) * 1993-06-30 2001-02-20 The United States Of America As Represented By The Secretary Of The Navy Ultra-high resolution liquid crystal display on silicon-on-sapphire
JPH0836771A (ja) 1994-07-25 1996-02-06 Sony Corp 光学ピックアップ
US5977559A (en) * 1995-09-29 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor having a catalyst element in its active regions
JPH08236771A (ja) * 1996-03-22 1996-09-13 Semiconductor Energy Lab Co Ltd Ｍｏｓ型トランジスタ
JP3274081B2 (ja) 1997-04-08 2002-04-15 松下電器産業株式会社 薄膜トランジスタの製造方法および液晶表示装置の製造方法
AUPO777997A0 (en) * 1997-07-09 1997-07-31 Technosearch Pty. Limited Improvements in containers
JP3679567B2 (ja) * 1997-09-30 2005-08-03 三洋電機株式会社 薄膜トランジスタの製造方法
KR19990039940A (ko) 1997-11-15 1999-06-05 구자홍 박막트랜지스터 제조방법
US6320204B1 (en) * 1997-12-25 2001-11-20 Seiko Epson Corporation Electro-optical device in which an extending portion of a channel region of a semiconductor layer is connected to a capacitor line and an electronic apparatus including the electro-optical device
JP2000111952A (ja) * 1998-10-07 2000-04-21 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
KR100469109B1 (ko) * 1998-11-26 2005-02-02 세이코 엡슨 가부시키가이샤 전기 광학 장치 및 그 제조방법 및 전자기기
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
US6395586B1 (en) * 1999-02-03 2002-05-28 Industrial Technology Research Institute Method for fabricating high aperture ratio TFT's and devices formed
KR100323080B1 (ko) * 1999-06-04 2002-02-09 구본준, 론 위라하디락사 박막 트랜지스터 및 그 제조방법
JP2001029050A (ja) 1999-07-22 2001-02-06 Asahi Denka Kogyo Kk 含水固形ルー用油脂組成物
JP2001196594A (ja) * 1999-08-31 2001-07-19 Fujitsu Ltd 薄膜トランジスタ、液晶表示用基板及びその製造方法
US6384427B1 (en) * 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US6646287B1 (en) * 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
KR100577410B1 (ko) * 1999-11-30 2006-05-08 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
US6825488B2 (en) * 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
AT410727B (de) * 2000-03-14 2003-07-25 Austria Mikrosysteme Int Verfahren zum unterbringen von sensoren in einem gehäuse
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP2002019751A (ja) 2000-07-05 2002-01-23 Fuji Photo Film Co Ltd ラベル貼付装置
TW515104B (en) * 2000-11-06 2002-12-21 Semiconductor Energy Lab Electro-optical device and method of manufacturing the same
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6773944B2 (en) * 2001-11-07 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JP4037117B2 (ja) 2008-01-23
US20020104992A1 (en) 2002-08-08
US20050242354A1 (en) 2005-11-03
US20030209709A1 (en) 2003-11-13
JP2002313810A (ja) 2002-10-25
US6936847B2 (en) 2005-08-30
KR20020065388A (ko) 2002-08-13
CN1375735A (zh) 2002-10-23
US7388228B2 (en) 2008-06-17
US6624443B2 (en) 2003-09-23
CN1185533C (zh) 2005-01-19
KR100526731B1 (ko) 2005-11-09

Similar Documents

Publication Publication Date Title
TW583424B (en) Display device and the manufacturing method thereof
KR100199652B1 (ko) 박막 전계 효과 트랜지스터 및 액정 표시 장치
CN107533981B (zh) 半导体装置以及其制造方法
KR100958640B1 (ko) 커패시터와 박막 트랜지스터를 갖는 기판, 이를 구비한평판 디스플레이 장치 및 상기 커패시터와 박막트랜지스터를 갖는 기판의 제조방법
TWI401802B (zh) 薄膜電晶體板及其製造方法
JP2004253511A (ja) 表示装置
KR100623232B1 (ko) 평판표시장치 및 그의 제조방법
KR100307457B1 (ko) 박막 트랜지스터의 제조 방법
US20100244037A1 (en) Thin film transistor, its manufacturing method, and liquid crystal display panel and electronic device using same
KR100686337B1 (ko) 박막 트랜지스터, 이의 제조 방법 및 이를 사용하는 평판표시장치
CN101017832A (zh) 薄膜晶体管基板及其制造方法以及具有该基板的显示面板
US7176491B2 (en) Semiconductor device
JP2003270663A (ja) 液晶表示装置
CN101521212B (zh) 显示装置及其制造方法
JP2003075870A (ja) 平面表示装置およびその製造方法
CN100523966C (zh) 显示装置及其制造方法
KR100288368B1 (ko) 박막트랜지스터와이것을제조하기위한방법
JP2005159304A (ja) 薄膜トランジスタ、この製造方法及びこれを用いた平板表示装置
US20090218574A1 (en) Display device and manufacturing method therefor
JP3647384B2 (ja) 薄膜半導体素子およびその製造方法並びに表示パネル
KR100534581B1 (ko) 골드 구조를 갖는 박막 트랜지스터를 제조하는 방법
KR100923054B1 (ko) 디스플레이 픽셀 및 이의 제조 방법
JP3259769B2 (ja) 薄膜集積素子
KR20080032722A (ko) 시모스 박막트랜지스터 기판 제조방법
JPH0997908A (ja) 非晶質硅素薄膜トランジスタおよび該薄膜トランジスタの製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees