TW507329B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TW507329B TW507329B TW089109648A TW89109648A TW507329B TW 507329 B TW507329 B TW 507329B TW 089109648 A TW089109648 A TW 089109648A TW 89109648 A TW89109648 A TW 89109648A TW 507329 B TW507329 B TW 507329B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- mentioned
- layer
- gate structure
- film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 120
- 239000010410 layer Substances 0.000 claims abstract description 359
- 239000011229 interlayer Substances 0.000 claims abstract description 58
- 239000004020 conductor Substances 0.000 claims abstract description 38
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 128
- 229910021332 silicide Inorganic materials 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 97
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 16
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 3
- 238000012937 correction Methods 0.000 claims description 2
- 241001331845 Equus asinus x caballus Species 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 117
- 101100393868 Arabidopsis thaliana GT11 gene Proteins 0.000 abstract description 20
- 101100393871 Arabidopsis thaliana GT12 gene Proteins 0.000 abstract description 13
- 230000002829 reductive effect Effects 0.000 abstract description 11
- 230000010354 integration Effects 0.000 abstract description 7
- 101100393872 Arabidopsis thaliana GT13 gene Proteins 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 52
- 229910052710 silicon Inorganic materials 0.000 description 50
- 239000010703 silicon Substances 0.000 description 50
- 238000004519 manufacturing process Methods 0.000 description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 30
- 229920005591 polysilicon Polymers 0.000 description 30
- 238000010586 diagram Methods 0.000 description 26
- 239000004575 stone Substances 0.000 description 23
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 238000005530 etching Methods 0.000 description 16
- 239000010941 cobalt Substances 0.000 description 14
- 229910017052 cobalt Inorganic materials 0.000 description 14
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 229910052721 tungsten Inorganic materials 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000009825 accumulation Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 101100393877 Arabidopsis thaliana GT14 gene Proteins 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 101100134896 Arabidopsis thaliana OFUT14 gene Proteins 0.000 description 7
- 101100406353 Arabidopsis thaliana OFUT36 gene Proteins 0.000 description 7
- 101100350231 Arabidopsis thaliana OFUT5 gene Proteins 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 101100134902 Arabidopsis thaliana OFUT23 gene Proteins 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000004904 shortening Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 101100001956 Arabidopsis thaliana APTG1 gene Proteins 0.000 description 4
- 102100031118 Catenin delta-2 Human genes 0.000 description 4
- 101000922056 Homo sapiens Catenin delta-2 Proteins 0.000 description 4
- 101100176068 Oryza sativa subsp. japonica GLUA3 gene Proteins 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000002689 soil Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 101710164994 50S ribosomal protein L13, chloroplastic Proteins 0.000 description 2
- 241001674048 Phthiraptera Species 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- BPPVUXSMLBXYGG-UHFFFAOYSA-N 4-[3-(4,5-dihydro-1,2-oxazol-3-yl)-2-methyl-4-methylsulfonylbenzoyl]-2-methyl-1h-pyrazol-3-one Chemical compound CC1=C(C(=O)C=2C(N(C)NC=2)=O)C=CC(S(C)(=O)=O)=C1C1=NOCC1 BPPVUXSMLBXYGG-UHFFFAOYSA-N 0.000 description 1
- 101710082414 50S ribosomal protein L12, chloroplastic Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102100026679 Carboxypeptidase Q Human genes 0.000 description 1
- 241001091551 Clio Species 0.000 description 1
- 101100266802 Escherichia coli (strain K12) ychF gene Proteins 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 101100166333 Homo sapiens CPQ gene Proteins 0.000 description 1
- 101000713585 Homo sapiens Tubulin beta-4A chain Proteins 0.000 description 1
- 206010029412 Nightmare Diseases 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 101100167281 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CIN4 gene Proteins 0.000 description 1
- 101100016060 Schizosaccharomyces pombe (strain 972 / ATCC 24843) gtp1 gene Proteins 0.000 description 1
- 102100036788 Tubulin beta-4A chain Human genes 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- AQLMHYSWFMLWBS-UHFFFAOYSA-N arsenite(1-) Chemical compound O[As](O)[O-] AQLMHYSWFMLWBS-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- IBIOTXDDKRNYMC-UHFFFAOYSA-N azanylidynedysprosium Chemical compound [Dy]#N IBIOTXDDKRNYMC-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 210000003254 palate Anatomy 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000008947 yigong Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0135—Manufacturing their gate conductors
- H10D84/0137—Manufacturing their gate conductors the gate conductors being silicided
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11218503A JP2001044294A (ja) | 1999-08-02 | 1999-08-02 | 半導体装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW507329B true TW507329B (en) | 2002-10-21 |
Family
ID=16720957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089109648A TW507329B (en) | 1999-08-02 | 2000-05-19 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6299314B1 (enExample) |
| JP (1) | JP2001044294A (enExample) |
| KR (1) | KR100362336B1 (enExample) |
| TW (1) | TW507329B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4618914B2 (ja) * | 2001-03-13 | 2011-01-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4911838B2 (ja) * | 2001-07-06 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US6524938B1 (en) * | 2002-02-13 | 2003-02-25 | Taiwan Semiconductor Manufacturing Company | Method for gate formation with improved spacer profile control |
| JP4094376B2 (ja) * | 2002-08-21 | 2008-06-04 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JP4294298B2 (ja) | 2002-11-18 | 2009-07-08 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2005064127A (ja) * | 2003-08-08 | 2005-03-10 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US20060108616A1 (en) * | 2004-11-22 | 2006-05-25 | Himax Technologies, Inc. | High-voltage metal-oxide-semiconductor transistor |
| US20060157819A1 (en) * | 2005-01-20 | 2006-07-20 | Bing-Chang Wu | Efuse structure |
| US20070048076A1 (en) * | 2005-08-31 | 2007-03-01 | To Chun Y | Fastening system for a ring binder mechanism |
| US7485934B2 (en) * | 2005-10-25 | 2009-02-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated semiconductor structure for SRAM cells |
| JP2007214538A (ja) * | 2006-01-11 | 2007-08-23 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP2008311457A (ja) * | 2007-06-15 | 2008-12-25 | Renesas Technology Corp | 半導体装置の製造方法 |
| US20090142915A1 (en) * | 2007-12-04 | 2009-06-04 | Weize Xiong | Gate structure and method of forming the same |
| DE102008012858B4 (de) * | 2008-03-06 | 2016-08-04 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einem das Halbleiterbauelement durchdringenden Isoliergraben und metallischen Bahnen zur galvanisch getrennten Signalübertragung und Verfahren zu dessen Herstellung |
| JP2010067645A (ja) * | 2008-09-08 | 2010-03-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP2012064854A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
| KR101797964B1 (ko) * | 2010-10-01 | 2017-11-15 | 삼성전자주식회사 | 반도체 장치의 제조 방법 및 그 방법으로 제조된 반도체 장치 |
| JP2013098374A (ja) * | 2011-11-01 | 2013-05-20 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| US9748232B2 (en) * | 2014-12-31 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
| KR102320047B1 (ko) | 2017-07-05 | 2021-11-01 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
| US12142686B2 (en) | 2021-05-26 | 2024-11-12 | Globalfoundries U.S. Inc. | Field effect transistor |
| US11764225B2 (en) * | 2021-06-10 | 2023-09-19 | Globalfoundries U.S. Inc. | Field effect transistor with shallow trench isolation features within source/drain regions |
| US20230141681A1 (en) * | 2021-11-11 | 2023-05-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cmos image sensors and manufacturing methods thereof |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2982249B2 (ja) * | 1990-08-09 | 1999-11-22 | 日本電気株式会社 | 半導体集積回路装置 |
| JPH05102428A (ja) * | 1991-10-07 | 1993-04-23 | Sony Corp | 半導体メモリ装置及びその製造方法 |
| JPH0923005A (ja) | 1995-07-06 | 1997-01-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6917083B1 (en) * | 1995-07-27 | 2005-07-12 | Micron Technology, Inc. | Local ground and VCC connection in an SRAM cell |
| JPH0955440A (ja) * | 1995-08-17 | 1997-02-25 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
| JPH0974143A (ja) * | 1995-09-07 | 1997-03-18 | Sony Corp | 半導体装置及びその製造方法 |
| JPH09326440A (ja) * | 1996-06-04 | 1997-12-16 | Sony Corp | 半導体装置の製造方法 |
| JP3781136B2 (ja) | 1996-06-17 | 2006-05-31 | 富士通株式会社 | 半導体装置及びその製造方法 |
| US5849621A (en) * | 1996-06-19 | 1998-12-15 | Advanced Micro Devices, Inc. | Method and structure for isolating semiconductor devices after transistor formation |
| JPH1012747A (ja) * | 1996-06-25 | 1998-01-16 | Sony Corp | 半導体装置の製造方法 |
| JPH1056078A (ja) * | 1996-08-08 | 1998-02-24 | Fujitsu Ltd | 半導体装置 |
| JPH10223770A (ja) * | 1997-02-10 | 1998-08-21 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP4010425B2 (ja) * | 1997-03-19 | 2007-11-21 | 富士通株式会社 | 半導体装置及びその製造方法 |
| US5792684A (en) * | 1997-04-21 | 1998-08-11 | Taiwan Semiconductor Manufacturing Company Ltd | Process for fabricating MOS memory devices, with a self-aligned contact structure, and MOS logic devices with salicide, both on a single semiconductor chip |
| JPH1117027A (ja) * | 1997-06-19 | 1999-01-22 | Hitachi Ltd | 半導体記憶装置及びその製造方法 |
| TW365065B (en) * | 1997-07-19 | 1999-07-21 | United Microelectronics Corp | Embedded memory structure and manufacturing method thereof |
| JPH11163281A (ja) * | 1997-11-26 | 1999-06-18 | Toshiba Corp | 半導体装置の製造方法 |
| US5863820A (en) * | 1998-02-02 | 1999-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integration of sac and salicide processes on a chip having embedded memory |
| JPH11345887A (ja) * | 1998-03-31 | 1999-12-14 | Seiko Epson Corp | 半導体装置およびその製造方法 |
| US6037222A (en) * | 1998-05-22 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Method for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technology |
-
1999
- 1999-08-02 JP JP11218503A patent/JP2001044294A/ja active Pending
-
2000
- 2000-01-31 US US09/494,785 patent/US6299314B1/en not_active Expired - Lifetime
- 2000-05-19 KR KR1020000026893A patent/KR100362336B1/ko not_active Expired - Fee Related
- 2000-05-19 TW TW089109648A patent/TW507329B/zh not_active IP Right Cessation
-
2001
- 2001-08-13 US US09/927,635 patent/US6468857B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6299314B1 (en) | 2001-10-09 |
| US6468857B2 (en) | 2002-10-22 |
| KR20010020858A (ko) | 2001-03-15 |
| KR100362336B1 (ko) | 2002-11-23 |
| US20020028569A1 (en) | 2002-03-07 |
| JP2001044294A (ja) | 2001-02-16 |
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