TW437017B - Silicone polymer insulation film on semiconductor substrate and method for formation thereof - Google Patents

Silicone polymer insulation film on semiconductor substrate and method for formation thereof Download PDF

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TW437017B
TW437017B TW088101644A TW88101644A TW437017B TW 437017 B TW437017 B TW 437017B TW 088101644 A TW088101644 A TW 088101644A TW 88101644 A TW88101644 A TW 88101644A TW 437017 B TW437017 B TW 437017B
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gas
silicon
reaction
dielectric constant
film
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Nobuo Matsuki
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Asm Japan Kk
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Description

」，Λ3701 7 五、發明說明α) ’且特別是有關於一 基底上形成一發酮聚 本發明是有關於一種半導體技術 種利用電漿化學氣相沈積法於半導.體 合物之方法。 發明背景： 由於目前大型積體電路的需求逐漸增加，故多； 許多注意。然而，在這些多層結構中；些個 別導線間的電容將會阻礙高速操作。為了降低這些 些絕緣膜之介電常數是必㈣。因A，具有各種相 對低電阻常數之絕緣膜乃被開發出來。 習知的氧化矽膜Si0x的製造方法是在含矽材料氣 =Α Γ如石夕甲焼或四乙氧基砍化⑯’加人氧氣或—氧化氮 氧化i 2劑盆f後再藉由加熱或電漿能量來製備所需要的 乳化夕膜’其相對電阻常數約為4. 0。 電漿緣膜則是使用CxFA作為材料氣體，利用 常數約為2'〜t 4法製造就化的非晶發碳膜，其相對介電 矽-氡另；=低絕緣膜之相對介電常數之方法’則是利用 在低芦/的良好穩定度而達成。其中，含矽的有機膜是 借。^二件下，利用電漿化學氣相沈積法由材料氣體製 c I=料^氣體是利用babbling方法蒸發式1}之P-TM0S 土二甲氧基矽甲烷，其乃一種笨和矽_的化 膜之相對介電常數可低至3.1。 0CH3
第4頁 ϊ 43701 7 五、發明說明（2) 絕 對 此外，更有一種以此犋所製成之孔狀結構。丈中 由旋塗方法所形成之無卿G材料所;其 介電常數可低至2. 3。 然而，士述之方法均有如下所述之缺點。 首先，IL化的非晶石夕後膜具有較低的熱穩定度（37〇 二Λ含的附著性較差，且其機械強度較差。較 ϊ的熱穩疋度在间溫時，例如大於40(rc，將導致損壞。 車又差的附著&則會使薄膜容易剝離。此外，較低的機械強 度將會危害導線材料。
一 P-TM0S分子聚合而成的募聚合物，由於p —TM〇s分子具 有=個氧-曱基鍵，故在氣相時不會形成線狀結構，例如 矽氧烷結構。不具有線狀結構之寡聚合物無法在矽基底上 形成孔狀結構，亦即沈積膜之密度無法被降低。因此，薄 膜之相對介電常數無法被降低至想要的程度。
至於babbling法則代表一種蒸發液態材料之方法，其 中’藉由使載體氣體（例如氬氣）通過材料，便可獲得所需 要的材料氣體。然後，再以載體氣體將所得到的材料氣體 f入反應室内。此方法一般均需要大量的載體氣體，以運 功所獲得之材料氣體。因此，材料氣體在反應室内所停留 的時間，並不足以在氣相產生聚合反應。 β 此外’利用旋塗法所形成之SOG絕緣膜所面臨的問題 $材料無法應用到矽基底上，且另一個問題是在塗佈步驟 完成後尚需一道固化的動作，因此成本花費也較高。 本發明之特徵
^ 437 0 1 7 * ____ < 五、發明說明（3) 一 本發明之一特徵是提出一種改善的絕緣膜以及形成此 絕緣膜之方法。 " 本發明之另一特徵是提出一種具有低相對介電常數' 高熱穩定度、高机濕乱性以及向附著強度的絕緣膜，以及 形成此絕緣膜之方法，。 本發明之另一特徵是提供—種材料，可用以形成具有-低相對介電常數、高熱穩定度、高抗濕氣性以及高附著強 度的絕緣膜。 本發明之另一特徵是提出一種可輕易形成具有低相對 介電常數之絕緣膜且不需昂貴裝置的方法。 發明概要 本發明之一特徵是揭示一種利用包含有反應室之電漿 化學氣相沈積裝置以在半導體基底上形成絕緣膜之方法， ，方法之步驟包括真接蒸發通式Si β〇βχΗ〆α，石，X和y 是整數）之含硬碳氫化合物，並且導入電漿化學氣相沈積 農置之反應室内’然後將可實質降低流量之添加氣體導入 反應室内’接著藉由電漿聚合反應於半導體基底上形成一 ，緣膜。其中，混 '合氣^是由作為材料氣體之蒸發含破碳 氣化合物和作為反應氣體之添茄氣體所構成。要注意的是 ^力σ氣體流量之降低也會導致反應氣體之總流量的實質降 低。根據本發明，便可製造出具有相當低介電常數之孔狀 石夕聚合物膜。 本發明之上述特徵，將於下列圖示中說明在半導體基 底上形成一絕緣膜，以及在此絕緣膜上形成一材料之製
第6頁 紅’ 43701 7 五、發明說明（4) 程。 圖示之簡單說明 第1圖顯示的是一種用以形成本發明之絕緣膜的電漿 化學沉積裝置。 第2圖顯示的是相對介電常數和反應氣體之總流量間 之關係，以及殘留時間和反應氣體之總流量間之關係，其 中此二實驗均以PM-DMS0作為材料氣體。 第3圖顯示的是使用PM-DMS0作為材料氣體之實驗的殘 留時間和相對介電常數間的關係。 第4圖是根據本發明之熱去吸附光譜，其中顯示分子 量16之曱烷自薄膜（PM-DM0S，DM-DM0S)中熱去吸附出來。 第5圖顯示的是在改變真空度情況下，自薄膜 (PM-DM0S，DM-M0S)中熱去吸附出來的總分子數量。亦 即，壓力上升導致氣體自薄膜中熱去吸附出來的熱去吸附 測試。 本發明之較佳實施例的詳細說明 基本方向 在本發明中，通式Si a，y3，x和y是整數）表示 之含石夕碳氫化合物，其較佳的是一種具有至少一梦-氧 鍵，兩個或小於兩個的〇-CnH2n+1鍵，以及至少兩個與矽鍵 結的碳氫自由基的化合物。更特別的是，此含矽碳氫化合 物包括至少一種以式2表示的化合物：
第7頁 1 Λ^7 Q 1 7 五、發明說明（5)
C„H
2η+ι— Ο - Si 〜〇 一 CmH 2m +1 (2) R2 其中，R1 和R2 是CH3、C2H3、C2H5、（:3H7 和C6H5 其中之一，且m 和η是任何整數。 除上述的種類以外，含矽碳氫化合物可包括至少一種 以式3表示的化合物： R3 - Si - Ο - CnH2n+1 i R2 其中，R1、R2和R3是CH3、 一，且η是任何整數。 除了上述的種類外， 以式4表示的化合物： R1 R3 (3) C2H3、C2H5、C3H7 和C6H5 其中之 含砍礙氫化合物可包括至少一種 (4)
CnH2n+i — Ο — Si — 〇 ~ Si — O — CnnH2m+i R2 R4 其中，R1 、R2 、R3 和R4 是CH3 、C2H3 、C2H5 、C3H7 和(：6115 其中 之一，且m和n是任何整數。 此外，除上述的種類外，含矽碳氫化合物可包括至少 一種以式5表示的化合物：
第8頁 ί ' 43701 7 五、發明說明（6) R6 R2 - Si - Ο - Si - R5 (5) R3 R4 其中，R1、R2、R3、R4 ' R5 和R6 是CH3、C2H3、C2H5、C3H7 和 C6H5其中之一，且添加氣體是氬氣、氦氣和氮氣、笑氣或 氧氣其中之一。 另外，除上述的種類外，含矽碳氫化合物可包括至少 —種以式6表示的化合物： R1 (6) R2 - Si - R4
I R3 其中，Rl、R2、R3 和R4 是CH3、C2H3、C2H5、C3H7 和C6H5 其中 之一，且添加氣體是氬氣、氦氣和氮氣、笑氣或氧氣其中 之一。 另外，此材料氣體可包括至少一種上述的含矽碳氫化 合物。 根據本發明上述的另一特徵，一形成於基底上之絕緣 膜是在電漿化學氣相沈積裝置内，藉由電漿能量使包括式 2表示之含石夕碳氫化合物的材料氣體聚合而成。 另外，此形成於基底上之絕緣膜是在電漿化學氣相沈 積裝置内，籍由電漿能量使包括式3表示之含矽碳氫化合 物的材料氣體聚合而成。
437017
五、發明說明（7) 另外’此形成於基底上 積裝置内，藉由電漿能量使 物的材料氣體聚合而成。 另外.，此形成於基底上 積裝置内，藉由電漿能量使 物的材料氣體聚合而成。 之絕緣膜是在電漿化學氣相沈 包括式4表示之含石夕碳氫化合 之絕緣膜是在電漿化學氣相沈 包括式5表示之含；ε夕碳氫化合 另外，此形成於基底上之絕緣膜是在電漿化學氣相沈 ^裝置内’藉由電毁能量使包括式6表示之含矽碳氫化合 物的材料氣體聚合而成。
根據本發明之另一特徵，形成絕緣膜之材料是由一位 基質周圍的式2表示之氣相供應，並且以電漿化學氣相 I!*積裝置處理之，藉由化學反應以在基底上形成一絕緣 3 另外，形成絕緣膜之材料是由一位在基質周圍，以式 示之氣相供應並且以電漿化學氣相沈積裝置處理之， 由化學反應以在基底上形成一絕緣膜。 表—另外’形成絕緣膜之材料是由—位在基質周圍的式4 不之氣相供應，並且以電漿化學氣相沈積裝置處理之， 由化學反應以在基底上形成一絕緣膜。 另外，形成絕緣膜之材料是由位在基質周圍的笑氣或 ） 氣作為氧化劑之氣相供應，並且以電漿化學氣相沈積裝 處理之’藉由化學反應以在基底上形成一絕緣膜。此材 广可為式5表示的化合物。 此外’形成絕緣膜之材料是由位在基質周圍的笑氣或
• 43701 7 五、發明說明 (8) ' " ' ' 氧氣作為氧化劑之氣相供應，並且以電漿化學氣相沈積裝 τΡ I® jw ^ 相' 由化學反應以在基底上形成一絕緣膜。此材 料可為式6表示的化合物。 殘留時間和氣體流量 胃 反應氣體之殘留時間是決定於反應用的反應室之容 I、反應的壓力以及反應氣體之總流量。反應的壓力一般 是1 - lOTorr ’較佳地是3_7Torr ’用以保持穩定的電漿。 為了延長反應氣體的殘留時間，反應的壓力是相當高。反 應氣體之總流量對於降低所形成之薄膜的相對介電常數是 相富重要的。材料氣體和添加氣體間之比例並不需要控 制。一般而言’殘留時間越長，相對介電常數會越低β用 以形成薄膜之之材料氣體流，其乃決定於所形成之薄膜的 組成比例和形成薄膜處之基底面積《例如，為了在基底 [半徑= 100mm]上以300nm/inin的沈積速率形成—薄膜，反 應氣體中預期將需要至少50sccm材料氣體，亦即每平方公 尺的基底表面積將近1.6xl02sccm ^總流量可由殘留時間 (Rt)來定義。當Rt是如下定義時’Rt之較佳範圍為大於等 於100msec，且更佳地是200msec SRtg5sec。在習知的電 漿TE0S中，Rt—般的範圍是介於1〇〜3〇msec間。
Rt[s]=9.42 X l〇7(Pr-Ts/Ps-Tr)r 2d/F 其中： W Ρ,:反應室壓力（Pa)
Ps :標準大氣壓（Pa)
Tr :反應氣體之平均溫度（K )
第11頁 437017 五、發明說明（9)
Ts :標準溫度（K) L :矽基底之半徑（m) d :石夕基底和上電極間之間隔（m) F ·反應氣體之總流量（s c c m) 如上所述’殘留時間代表的是氣體分子停留在反應室 内的平均時間α殘留時間（Rt)可由Rt= α v/s來計算，其 中乂是反應室的容量（cc)，s是反應氣體之體積（cc/s)，且 α是由反應室之形狀以及氣體入口和廢氣出口間之位置關 係所決定的係數。反應室内所需要的反應空間是由基底之
表面積（m2)以及上電極和下電極間之空間來決定。考慮流 向反應空間之氣體時，a可被假設為丨/2。在上式中，α 是 1/2。 基本影響 在此方法中，材料氣體簡而言之是一種含矽的碳氫化 合物，其包括至少一矽-氧鍵，至多兩個0-CnH2n+1鍵，以及 至少兩個鍵結於矽上的碳氫自由基。此外，此材料氣體可 直接利用蒸發法而被蒸發。此方法將造成具有低相對介電 常數、高熱穩定度以及高抗濕氣性之絕緣膜。 更特別地是，利用直接蒸發法而被蒸發的此材料氣 體’可在電漿中停留足夠的時間。因此’將可在氣相形成 一具有基本結構（式7)之線形聚合物，其中” η”是2或更大 的值。此聚合物可沈積在半導體基底上，並且形成一具有 微孔結構之絕緣膜。
第12頁 ί ' 4 3 7 0 17 五、 發明說明（ίο)
R1
XI —
Si——Ο — Χ2I R2 (7)
其中，XI和Χ2是0nCraHp，而η是0或1，m和ρ則是包括0在内 的整數。 此根據本發明之絕緣膜具有相對高穩定度，因為S i 1 鰱結的基本結構間具有高鍵結能量。此外，由於此絕緣_ 具有微孔結構，故其相對介電常數較低。另外，（-Si 的基本結構具有兩端，懸宕的鍵是以具有疏水性的峻氣^ 由基終止，故此性質將賦予絕緣膜具有抗水氣特性。此 外，碳氫自由基和石夕之間的鍵結是穩定的。例如，石夕與甲 基自由基鍵結的鍵（例如S i - C H3)和與苯鍵結的鍵（例如 si-CeH5)之解離溫度為500 °C或者更高。由於上述的半導體 製程均需要大於450 °C的熱穩定度，故此膜之特性將有_ 於半導體的製造。 此外，本發明之優點和特徵將以本發明之較佳實施 詳細說明於下。 圖式之簡單說明： 第1圖顯示的是本發明所使用的電漿化學氣相沈積裳 置。此裝置包含一反應氣體供應元件12，以及一電漿化學 氣相沈積元件1。反應氣體供應元件1 2包括有複數條線路 13，設置於線路中的控制閥8，以及氣體入口 14、15和
第13頁 43701 7 五、發明說明（11) 1 6。流量控制器7是與個別的控制閥8連接，用以控制預定 體積之材料氣體的流量。一用以容納液體反應材料1 8之容 器是與一可直接將液體蒸發的蒸發器（vaporizer) 17連 接。電漿化學氣相沈積元件1包括一反應室6、一氣體入口 5、一susceptor 3以及一加熱器2。循環氣體擴散板1〇是 設置在氣體入口下方。氣體擴散板10之下表面具有許多微 小開口，且可經此開口使反應氣體被注入半導體基底4 上。反應室6之底部具有一廢氣排氣口u。此廢氣排氣口 11是與一外部的真空幫浦（未顯示）連接，用以抽出反應室 内部之氣體。Susceptor 3是平行面向氣體擴散板1〇置 放，susceptor並擁有一位於其上的半導體基底4，且以加 熱器2加熱之。氣體入口 5是與反應室6互相隔離，並且鱼 一位在外面的高頻率電源供應器9連接。另一個選擇是^ susceptor 3可與電源供應器g連接。因此，氣體擴散板 ^susceptor 3可作為高頻率電極，並在鄰近 體 表面產生電漿反應場。 & 根，本發明利用t聚化帛氣相沈積裝置以在半導體基 底上形成一絕緣膜之方法，盆牛锁 η Γ 0 万法，、步驟包括：直接將以通式Si a ^ yS 'v CX-, 卢，X和y是替金〇矣+ — A “山於 恭并道_ λ + , )表不之含矽碳氫化合物蒸 發’並V入電漿化學氣相沈積元件i之 將可實質降低氣體流量之添加氣接J 利用作為材料氣體之含砂墟 汉應至内接者， 氣體，並藉由電漿聚合反應而在半ΐ體 基底上形成—絕緣膜。值得注意的是添加氣體流量
43701 7 五、發明說明（12) 也會實質賦予反應氣體流量之降低。此特徵將於以下詳細 討論。 材料和添加氣體 在此發明中，以通式S i α 0 Θ Cx Hy ( α， β , χ和y是整數） 表示之含矽碳氫化合物較佳的是具有至少一矽-氧鍵，兩 個或小於兩個的〇-CnH2n+1鍵，以及至少兩個與矽鍵結之碳 氫自由基。更特別地是，此化合物可以化學式（A )表示： (2)
CnH2n+1_0 —Si-0_CmH2m+1
I R2 其中，R1 和R2 是CH3、C2H3、C2H5、C3H7 和C6H5 其中之一，且m 和ri是任何整數； 一以化學式（Β )表示的化合物： (3) R3 — Si — Ο — CnH2n+i R2 其中，Rl、R2 和R3 是CH3、C2H3、（:2H5、(:3H7 和(：6115 其中之 一，且m和η是任何整數； 一以化學式（C)表示的化合物：
第15頁 i ' 4370 17 , 五、發明說明（13) ' R1 R3
! I
CnH2n+1 - Ο - Si - 〇 - Si - 〇 - CmH2m+1 ⑷ ! ! R2 R4 其中，R1、R2、R3 和R4 可為CH3、C2H3、C2H5、C3H7 和C6H5 其 中之一，而m和n可為任何整數； 一以化學式（D )表示的化合物： R1 R6
ί I R2 - Si - Ο - Si - R5 ! I ⑴ R3 R4 其中，R1、R2、R3、R4、R5 和R6 可為CH3、C2H3、C2H5 和C3H7 和C6H5其中之一，以及此化合物與笑氣和氧氣構成氧化劑 混合而成之混合物；或者 一以化學式（E)表示的化合物： R1
I R2 - Si - R4 , (6) 1 R3 其中，Rl、R2、R3 和R4 可為CH3、C2H3、C2H5 和C3H7 和C6H5 其 中之一，以及此化合物與作為氧化劑之笑氣和氧氣混合而 成之混合物。 此外，要注意的是含石夕破氫化合物可為這些化合物和 混合物之任意組合。
第16頁 Γ， 4370 1 7 , ______________ 五、發明說明（14) 在此實施例中所使用的添加氣體，較特別地是氬氣和 氦氣。氬氣主要是用來穩定電漿’而氦氣則是用來改善電 漿之均勻度，以及絕緣膜之均勻厚度。
在如上所述之方法中’第一步驟的直接蒸發法是使流 量受到控制之液體材料，在一預熱的蒸發器内立即被蒸 發。此直接蒸發法並不需要載體氣體，例如氬氣，以獲得 預定量的材料氣體。此方法與babbling法有極大的差異。 由於不再需要大量的氬氣或氦氣’故將可降低總反應氣體 之流量’進而延長材料氣體停留在電聚中的時間。因此， 氣相中將有足夠的聚合反應發生，故可形成一種線形聚合 物，並獲得一種具有微孔結構的膜。 在第1圖中純氣是經由氣體入口 1 4供應，以將含石夕 碳氫化合物構成的液體反應材料1 8經管線1 3推到控制閥 8。控制閥8乃以流量控制器7控制液體反應材料丨8之流 量，故將不會超過預定的體積。減量的含矽碳氫化合物18 到達蒸發器1 7後’將直接被如上所述之方法蒸發。氬氣和 氦氣則是分別經由入口 1 5和1 6供應，並且以閥8控制氣體 的流量。材料氣體和添加氣體所構成作為材料氣體之混合 物’則係經由電漿化學氣相沈積元件1之入口 5供應。將位 在反應室内部之氣體擴散板1〇和半導體基底4間之空間抽 乾淨後’再通以高頻率的RF電壓，其較佳地是13 4ΜΗζ和 43 0kHz。此空間乃被用來作為電漿場。Suscept〇；r 3連續 地以加熱器2加熱半導體基底4，並且使此基底4保持在預 定的350〜450 °C之間。經由氣體擴散板1〇之微小開口供應
4370 五、發明說明（15) 為時一段時 的反應氣體乃保持於接近半導體基底*表面 間。 ~ 假使殘留時間較短，蔣 取八从 ^ rrf ,, I…、法在基底上沈積足夠的線形 水5物，並形成一微孔狀沾碰 ^ ^ '# Λ ^ 狀的…構。由於殘留時間與反應氣 體之λϊ丨L遺》成反比，及靡裔jg*、占θ 汉應乳體流量之降低將可延長殘留時 間。 反應氣體總體精之下隊i i % 積义下降可被添加氣體有效地降低，故 可延長反應氣體之務毯歧問 ^ 殘留時間’並且沈積足夠多的線形聚合 物，而形成一具有微孔結構的絕緣膜。 為了調氣相的反應，添力口少量的鈍氣、氧化劑、還 原劑至反應室内是有效地。氦氣和氬氣是鈍氣，且具有不 同的第二游離能，分別為24. 56eV和15. 76eV。因此，藉由 加入^量的氦氣或氬氣或者此二者以預定比例組合者，將 可使氣相中的材料氣體受到控制。氣相中的分子經過聚合 反應後’將會形成募聚合物β .此寡聚合物内之氧：矽比例 預期為1 .1。然而，當此寡聚合物在基底上形成一膜後， 此寡聚合物將會進一步地進行聚合反應，造成較高的含氧 比例、比例可視基底上之薄膜的相對介電常數或其他特 性來決定（例如在以下將描述的例5中，此比例為3 : 2 )。 由材料氣體中去除且未被併入薄膜中的殘餘氧氣將會 自材料化合物中分解出來，並且飄移到電漿内。材料氣體 内之石夕：氧比是由化合物來決定，例如上述之通式2_6的 化合物’其氣：矽比分別是2 : 1、1 : 1、3 : 2、1 : 2和0 : 1。 假使具有較高氧：矽（例如3 : 2或更高）比值的材料氣體被
第18頁 43701 7 >、發明說明（16) 使用，電漿中漂浮的氧氣量將會增加。當氧氣的量增加 時，與矽直接鍵結並形成薄膜的官能基將會被氣化，進而 町能使薄膜損壞。據上所述’電聚中之氧氣比例可藉由在 反應室内添加還原氣體（例如氫氣和’烧）而被降低，以防 ;有機官能基發師如上所述的氧化反應。相反地，當氧： 矽比例較低時（例如3/2或更低），形成薄膜將需要補充氧 氟，例如可添加笑氣或氧氣等氧化劑。還原劑或氧化劑的 適當用量可由事先的實驗來預測’其中所形成之薄膜並以 FT- IR或XRS分析其組成，旅且分析其介電常數。因此，藉 由選擇適當種類的添加氣體，例如氦氣、氬氣，還原劑以 .) 及氧化劑，並且控制每一種氣體的添加量’即可獲得一具厂 有預定特性之薄膜。 其他特徵 如上所述，構成用以產生矽酮聚合物之材料氣體的含 石夕碳氫化合物，其較佳的是具有兩個或少於兩個院氧基， 或者不具烷氧基。使用具有三個或更多烷氧基之材料氣體 將會干擾線形石夕酮聚合物的形成，導致具有相對高介電常 數之薄膜。如上所述，儘管石夕原子的數目不受限制，不過 每個化合物分子較佳的是具有一個、二個或三個；s夕原子 (矽原子越多，氣化將變的越困難，且化合物合成之成本 } 將會越高）。烷氧基一般是含有卜3個碳原子，較佳地是含 1個或2個破原子。其中’與梦鍵結的碳氫化合物一般具有 1 -1 2個碳原子’較佳地是1 - 6個碳原子。較佳的含砍碳氣 化合物具有如下所示之通式：
4370 1 五、發明說明（17) 苴由 ΐ1α〇^1^α-β^〇^2αη) β /、中，α疋卜3間的整數，沒是〇 ' α、或 = 是與〜結机^氫化合物％二=3二的 :使=疋決定於矽酮聚合物膜之相對介電戈原:! ;，較佳地是3·10或更低’更佳地是2.⑻，以及= 性，例如介電常數和熱穩定度。材料氣體，之氧，他特 在挑選氧化劑或還原劑時亦必須加以考慮。比例 3 : 2時’較佳地是選擇氧化劑，然而假使比例= 例，於 時，則使用還原劑。此外，鈍氣例如氬氣和氦氣 控制電漿反應，但在形成矽聚合物膜時是不可缺少=。來 外，材料氣體和添加氣體之流速也可根據電漿化學氣此 (CVD)沈積裝置加以變化。其中，適當的流速 ^目 取曰物膜之相對介電常數以及反應氣體（材料氣體和添加 氣體）之殘留時間之間的關係來決定。殘留時間越長1 ^ 電常數變得越低。每延長的殘留時間長度之介電常數之降 低比例是可改變的，且在一段殘留時間後，介電常數之降 低比例將會顯著的增加，也就是說介電常數在一段反應氣 體之殘留時間後將會迅速地下降。在經過介電常數之迅迷 下降範圍後，介電常數的下降將會緩和下來。此現象極為 有趣。在本發明中，藉由延長殘留時間直到介電常數到達 迅速下降範圍的依據是建立薄膜之介電常數和反應氣體之 殘留時間之間的關係，因此矽酮聚合物之相對介電常數將 可顯著地被降低。 實施例：
第20頁 五、發明說明（18) 根據本發明之貫驗所得到之較佳結果將於以下詳細說 明之。在該些實驗中’所使用的材料氣體有pM_M〇s(苯曱 基二甲氧基碎曱院’式1)，DM_DM〇s(二甲基二甲氧基矽甲 烧’式8)以及P-TM0S。實驗的裝置則是使用一般的電漿化 學氣相裝置（EAGLE-10TM，ASM Japan K.K.)。形成薄膜之 條件則如下所示： 添加氣體：复氣和和氦氣 RF能源供應：250W(藉由頻率丨3. 4MHz以及430MHz兩者 彼此合成而得） 基底溫度：4 0 0 °C 反應壓力：7 Torr 蒸發方法：直接蒸發 殘留時間（R t)則是以下式定義之：
Rt[s] = 9.42 X 1 〇7(Pr-Ts/Ps-Tr )rw2d/F 在此式中’每個縮寫代表的是如下所示之意義：
Pr :反應式壓力（Pa)
Ps :標準大氣壓（Pa)
Tr :反應氣體之平均溫度（K)
Ts :標準溫度00 rw :矽基底之半徑（m ) d :矽基底和上層電極間之距離（m) F :反應氣體總流量（s c c m ) 上述之該些參數是根據下列的數值混合，惟反應氣體 總流量是改變的，用以找出總流量與相對介電常數之間的
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私 3 "7 ο 1 y I ' 43701 τ 五、發明說明（20) 表一 材料氣體流速 (seem) 氬氣 (seem) 氦氣 (seem) 反應氣體總流量 (seem) 殘留時間 (msec) 相對介電常 數ε 比較例1 (P-TMOS) 100 1000 1000 2100 24 3.38 比較例2 (P-TMOS) 100 10 10 120 412 3‘42 比較例3 (PM-DMOS) 100 775 775 1650 30 3.41 比較例4 (PM-DMOS) 100 550 550 1200 41 3.41 比較例5 (PM-DMOS) 100 430 430 960 51 3.40 比較例6 (PM-DMOS) 100 310 310 720 68 335 實施例1 (PM-DMOS) 100 140 140 480 103 3.10 實施例2 (PM-DMOS) 100 100 100 300 165 2.76 實施例3 (PM-DMOS) 100 70 70 240 206 2.64 實施例4 (PM-DMOS) 100 10 10 120 412 2.45 實施例5 (DM-DMOS) 100 10 10 120 412 2.58 實施例6 (DM-DMOS) 25 3 0 28 1764 2.51 實施例7 (DM-DMOS) 25 0 5 30 1647 2.50 添加氣體改 變 氫氣 (seem) 曱烷 (seem) 實施例8 (DM-DMOS) 100 20 0 120 412 2.52 實施例9 (DM-DMOS) 25 5 0 30 1647 2.49 實施例10 (DM-DMOS) 25 0 5 30 1647 2.67 ΙΗΙΙΙΙΙ 第23頁 437017 五、發明說明（21) 比較例1 : 材料氣體：P - Τ Μ 0 S ( 1 0 0 s c c m ) ' 添加氣體：氬氣（lOOsccm)以及氦氣（i〇〇〇sccm) 反應氣體之總流量：21 0 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是2 4 m s e c，且根據此例之條件所獲得之薄膜，其 相對介電常數ε為3.38。 比較例2 : 材料氣體：P-TMOS (lOOsccm) 添加氣體：氛氣（lOsccm)以及氣氣（lOsccm) 反應氣體之總流量：120sccm 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是41 2 m s e c ’且根據此例之條件所獲得之薄膜， 其相對介電常數ε為3. 42。 比較例3 : 材料氣體：PM-MOS (lOOsccm) 添加氣體氣氣（775sccm)以及氮氣（775sccin) 反應氣體之總流量：1 6 5 0 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是3 0 m s e c，且根據此例之條件所獲得之薄膜，其 相對介電常數ε為3.41。 比較例4 : 材料氣體：PM-DM0S (lOOsccm) 添加氣體：氬氣（550sccm)以及氦氣（I2〇〇sccm)
第24頁 卜 ' 437 LM 7 五、發明說明（22) 反應氣體之總流量：1200sccm 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是41 m s e c，且根據此例之條件所獲得之薄膜，其 相對介電常數ε為3.41。 比較例5 : 材料氣體：PM-DMOS (lOOsccm) 添加氣體：氬氣（430sccm)以及氦氣（ 430sccm) 反應氣體之總流量：9 6 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是5 1 m s e c ’且根據此例之條件所獲得之薄膜，其 相對介電常數ε為3. 40。 比較例6 : 材料氣體：PM-DMOS (lOOsccm) 添加氣體氣氣（310sccm)以及乳氣（31 Osccm) 反應氣體之總流量：7 2 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是6 8 m s e c，且根據此例之條件所獲得之薄膜，其 相對介電常數ε為3. 3 5。 實施例1 : 材料氣體：PM-DMOS (lOOsccm) 添加氣體：氬氣（140sccm)以及氦氣（i4〇sccm) 反應氣體之總流量：4 8 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是1 〇 3 m s e c，且根據此例之條件所獲得之薄膜，
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五、發明說明（23) 其相對介電常數e為3. 1 0 實施例2 : 材料氣體：PM-DMOS (lOOsccm) 添加氣體：轰1氣（10〇5<^111)以及氦氣（i〇〇sccm) 反應氣體之總流量：300sccm 其他用以形成薄膜之條件乃如上所示，計算出來之 留時間R t是1 6 5 m s e c ’且根據此例之條件所獲得之薄膜， 其相對介電常數e為2.76。 ' 實施例3 : 材料氣體：PM-DMOS (lOOsccm)
添加氣體：氬氣（70sccm)以及氦氣（7〇sccm) 反應氣體之總流量：240sccm 其他用以形成薄膜之條件乃如上所示，計算出 留時間Rt是206msec ’且根據此例之條件所獲得之 其相對介電常數e為2. 64。 ' 實施例4 : 材料氣體：PM-DMOS (lOOsccm) 添加氣體：氬氣（lOsccm)以及氦氣) 反應氣體之總流量：120sccm 留 其 其他用以形成薄膜之條件乃如上所示， 時間Rt是4 1 2msec，且根據此例之條杜私松1奸®木^ 相對介電常數ε為2.45。 條件所獲得之薄膜， 以下，將根據上述結果以及第2 第2圖顯示的是使用PM-DMOS做為材 圖和第3圖加以檢視（ 料氣體時，相對介電
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-437 01 7_____ 五、發明說明（24) 常數e和反應氣體總流量之間的關係以及殘留時間R t和反 應氣體總流量之間的關係。第3圖顯示的是使用PM-DM0S 做為材料氣體時，殘留時間Rt和相對介電常數e之間的關 係。 首先，將檢視PM-DM0S氣體之總流量和絕緣膜之相對 介電常數ε之間的關係。如第2圖所示，當氣體流量接近 7〇〇sccm時，相對介電常數e幾乎固定為3.4。然而，相對 介電常數ε —開始是隨氣體流量減少而下降（亦即再接近 或小於7 0 0 s c c m時）。此外，當氣體流量低於5 0 0 s c c m時， 殘留時間Rt將劇烈地上升，而相對介電常數ε則劇烈下 降。同時，第3圖顯示當殘留時間Rt由約70msec開始增加 時’相對介電常數ε則開始下降。其中，當殘留時間大於 400msec時，相對介電常數£則下降至2.45。 因此，本發明之時施例顯示假使可藉由控制PM-DMOS 和添加氣體構成之反應氣體的總流量使得殘留時間Rt大於 1 00msec，則相對介電常數ε將可被控制在低於3. 1。 實施例5 : 此實施例將以DM-DMOS(式8)作為材料氣體。 材料氣體：])M-DM0S (lOOsccm) 添加氣體：氬氣（l〇sc cm)以及氦氣（l〇 seem ) 反應氣體之.總流量：1 2 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是4 1 2 m s e c，且根據此例之4件所獲得之薄臈， 其相對介電常數e為2.58。
第27頁
實施例6 : 材料氣體：DM_DM0S (25sccm)' 添加氣體：氬氣（3sccm)以及氦氣（Osccm) 反應氣體之總流量：2 8 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之歹篆 留時間Rt是1 764msec，且根據此例之條件所獲得之薄膜， 其相對介電常數ε為2. 51。 ' 實施例7 : 材料氣體：DM-DMOS (25sccm) 添加氣體：氬氣（Osccm)以及氦氣（5sccm) 反應氣體之總流量：3 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是1 6 4 7 m s e c，且根據此例之條件所獲得之薄膜， 其相對介電常數e為2.50。 實施例8 : 材料氣體：DM-DMOS (lOOsccm) 添加氣體：氫氣（20sccm)以及甲烧（Osccm) 反應氣體之總流量：1 2 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間Rt是41 2msec，且根據此例之條件所獲得之薄臈， 其相對介電常數ε為2.52。 實施例9 : 材料氣體：DM-DMOS (25sccm) 添加氣體：氫氣（5sccm)以及曱烧（Osccm)
第28頁 i 、 437 ϋ1 7 五、發明說明（26) - 反應氣體之總流量：3 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來&歹免 留時間Rt是1 647msec，且根據此例之條件所獲得之薄膜， 其相對介電常數ε為2. 49。 丨、 實施例1 0 : 材料氣體：DM_MOS (25sccm) 添加氣體：氫氣（Osccm)以及曱院（5sccm) 反應氣體之總流量：3 0 s c c m 其他用以形成薄膜之條件乃如上所示，計算出來之殘 留時間R t是1 6 4 7msec，且根據此例之條件所獲得之薄膜， 其相對介電常數ε為2.67。 '、 因此’如上結杲所示，在式2的材料氣體中，兩種氣 體（R1 為C6H5 且R2 為CH32PM-DMOS，以及R1 為ch3AR2 為CH3 之DM-DMOS)均可製造非常低相對介電常數之絕緣膜（e ^ 3, 1 )。 、 以下將檢視若以P-TMOS取代PM-DMOS時能否賦予相同 的結果。比較例1和2均是以P-TMOS做為材料氣體之結果， 此結果顯示即使在反應氣體總流量降低至1 %時，相對介電 常數仍不會被降低。因此，存在於PM-DMOS中之氣體總流 量和相對介電常數之間的關係，不適用於P-TMOS。 另外’以下將檢視使用不同材料氣體時之相對介電常 數的差異。比較例2和本發明實施例4之氣體流量和其他條 件雖然相同，然P-TMOS做為反應氣體之相對介電常數辱 42，而PM-DMOS作為反應氣體之相對介電常數則為2.45。
第29頁 ί ' 43?υ1 7 五'發明說明（27) 此二相對介電常數值之間的差異乃在於材料氣體間的分q 結構。亦即’ PM-MOS具有一對相對而言較不穩定且易分 開的0-CH3鍵，故在聚合反應發生時，氣態中所存在的是 線形的聚合物（式7 )。此聚合物沈積在半導體基底上時， 將會形成一微孔結構，進而降低絕緣膜之相對介電常數。 袓反地，由於P-TMOS具有3個0-CH3鍵，即使殘留時間延 長’其聚合物仍不會線性地沈積。因此，沈積的薄膜不會 具有微孔結構，故相對介電常束也不會被降低。 上述的實驗已經證實使用具有含矽的碳氫化合物作為 材料氣體時，其較佳的是不僅具有矽-氧鍵，也具有至多'2 個◦ - Cn 鍵’以及至少2個與碎鍵結的碳氣自由基。 根據本發明所形成之低介電常數薄膜的穩定度，可藉 由測量例4中以PM-DMOS做為反應氣體所獲得之薄膜和例/ 中以DM-DMOS做為反應氣體所獲得之薄膜來估計，並且估 計相對介電常數之穩定度和其熱穩定度。 表2 :栢對介電t數 材料氣艏 剛形成時 在高溫以及高滿度環境 中1小時後 例4 PM-DMOS 2.45 2.45 例5 DM-DMOS 2.58 2.58 (2)熱穩定度 薄膜結構之熱穩定度乃是以熱去吸附測試加以測量， 也就是說分別形成於矽晶圓上之DM-DM〇S樣品和dm_dm〇s樣 品被置放在真空中，並且以每分鐘升1〇。(3之速率升高溫
第30頁 ^ 4370 ϊ 7 五、發明說明（28) 度’然後測罝由薄胺6 * 是在溫度上升過中去吸附的分子數量。第4圖顯示的 附光譜。第5圖’薄膜成分令分子量16的甲烧之去吸 的總分子數量不的是真空度改變下’自薄膜中去吸附 並未偵測到有去％此二實驗中’於400 °C或較低的溫度不 PM-DM0S是開始^的現象。其中，去吸附反應在 低相對介電常數:t ，而M_DM〇S則是開始於5〇〇°C。 °C。因此， 、,、斤需要的熱穩定度一般是介於400 °C至450 必’上迷的結果證實PM-DMOS和DM-DMOS薄膜呈右离 熱穩定度。 ' ^ ^ ^ 如上所述’本發明之方法使用含矽碳氫化合物作為材 料氣體’以產生具有高熱穩定度、高抗濕性和低相對介電 長樹枝絕緣膜。此外，控制反應氣體之殘留時間可有效且 建議地控制薄膜之相對介電常數。另外，本發明之方法可 確實簡易地產生絕緣膜而不必昂貴的裝置。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者’在不脫離本發明之精神 和範圍内’所作之各種更動與潤飾’均落在本發明的專利 範圍内。此外，本發明之保護範圍當視後附之申請專利 圍所界定者為準。 &

Claims (1)

  1. 六、申請專利範圍 1 · 一種藉由 合物之方法，其 直接蒸發一 聚合物之材料氣 兩個的烷氧基， 將該材料氣 内’其内並置有 將一種控制 加氣體是用以提 在反應室内 料氣體和添加氣 成一具有低相對 控制該反應 内之殘留時間， 預定值。 2. 如申請專 間是決定於相對 3. 如申請專 含石夕鲷之碳氫化 4 _如申請專 含矽鲷之碳氫化 5. 如申請專 之碳氫化合物内 6. 如申請專 電漿處 步釋包 含石夕的 體，該 或不具 理以在半 括： 碳·氫化合 含石夕的石炭 烧氧基； 導體基底上形成一；5夕_聚 物，以產生一種生產；5夕酿| 氫化合物具有兩個或小於 體導入一電漿化學氣相沈積製程之反應室 一半導 電漿反 供形成 活化電 體之反 介電常 氣體之 直到該 體基底 應的添加 矽酮薄膜 槳·聚合反 應氣體， 數之石夕酮 流速以延 矽酮聚合 氣體導入反應室内，該添 内預定的氧：矽比例； 應’其中並存在有含該材 用以在該半導體基底上形 聚合物薄膜；以及 長該反應氣體在該反應室 物膜之相對介電常數低於 利範圍第1項所述之方法，其中該殘留時 介電常數和殘留時間之間的關係。 利範圍第1項所述之方法，其中存在於該 合物内的烷氧基具有1至3個碳。 利範圍第1項所述之方法，其中存在於該 合物内的碳氫化合物具有1至6個碳。 利範圍第1項所述之方法，其中該含矽酮 具有1至3個發原子。 利範圍第1項所述之方法，其中該含矽之
    _麵I
    第32頁 437017 六、申請專利範圍 其中α 而R則 碳氫化合物具有3匕(^-11^_1}+2(0(：[11^+1)冷之通式 是卜3間的整數，召是0、1或2，η是卜3間的整數 是接在矽上的CV6碳氫化合物。 7. 如申請專利範圍第1項所述之方法，其中該添加氣 體包括有至少氬氣或氦氣。 8. 如申請專利範圍第1項所述之方法，其中該添加氣 體包括有一種氧化劑或還原劑，用以決定該材料氣體内之 矽：氧比例，以形成一具有預定特性之矽酮聚合物膜。 9. 如申請專利範圍第7項所述之方法，其中該添加氣 體包括有一種氧化劑或還原劑，用以決定該材料氣體内之 矽：氧比例，以形成一具有預定特性之矽酮聚合物膜。 1 0.如申請專利範圍第1項所述之方法，其中該含矽之 碳氫化合物是選自下列族群： Si - ° - CnH；n+1 R.2 CnH2n+1- 〇 — Si - Ο — CmH2(1 I R2 R1 R3 I CnH2n + 1 - O-Si-O-Si- O - CmH I ί R2 R4 2m+ 1 R1 R6 I i R2 — Si —〇一Si - R5 i I R3 R4 I -Si - R4 i R3
    第33頁 I ' 43Ία1 1： 六、申請專利範圍 其中，R1、R2、R3、R4、R5 和R6 是獨立地CH3、C2H3、 C2H5、C3H7或C6H5，且m和η是1 - 6間的-整數。 11 ·如申請專利範圍第1項所述之方法，其中該反應氣 體之流速是控制在可提供相對介電常數低於3. 3 0之矽酮聚 合物膜。 1 2.如申請專利範圍第1項所述之方法，其中該反應氣 體之殘餘時間的預測值是決定於薄膜之相對介電常數和殘 留時間之間的關係。
    第34頁
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CN109922952A (zh) * 2016-08-30 2019-06-21 康宁股份有限公司 用于片材结合的硅氧烷等离子体聚合物

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