TW381224B - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device Download PDF

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Publication number
TW381224B
TW381224B TW087112838A TW87112838A TW381224B TW 381224 B TW381224 B TW 381224B TW 087112838 A TW087112838 A TW 087112838A TW 87112838 A TW87112838 A TW 87112838A TW 381224 B TW381224 B TW 381224B
Authority
TW
Taiwan
Prior art keywords
data
memory
circuit
mentioned
line
Prior art date
Application number
TW087112838A
Other languages
English (en)
Chinese (zh)
Inventor
Shooji Kubono
Keiichi Yoshida
Original Assignee
Hitachi Ltd
Hitachi Ulsi Eng Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Ulsi Eng Corp filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW381224B publication Critical patent/TW381224B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
TW087112838A 1996-07-10 1997-06-16 Non-volatile semiconductor memory device TW381224B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18085996A JP3062730B2 (ja) 1996-07-10 1996-07-10 不揮発性半導体記憶装置および書込み方法

Publications (1)

Publication Number Publication Date
TW381224B true TW381224B (en) 2000-02-01

Family

ID=16090611

Family Applications (2)

Application Number Title Priority Date Filing Date
TW087112838A TW381224B (en) 1996-07-10 1997-06-16 Non-volatile semiconductor memory device
TW086108317A TW350048B (en) 1996-07-10 1997-06-16 Non-volatile semiconductor memory and the writing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW086108317A TW350048B (en) 1996-07-10 1997-06-16 Non-volatile semiconductor memory and the writing method

Country Status (4)

Country Link
US (2) US5959882A (https=)
JP (2) JP3062730B2 (https=)
KR (1) KR980011502A (https=)
TW (2) TW381224B (https=)

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Also Published As

Publication number Publication date
JPH1027486A (ja) 1998-01-27
US6525960B2 (en) 2003-02-25
KR980011502A (ko) 1998-04-30
JP3062730B2 (ja) 2000-07-12
US5959882A (en) 1999-09-28
JPH11195299A (ja) 1999-07-21
US20020181279A1 (en) 2002-12-05
JP3993323B2 (ja) 2007-10-17
TW350048B (en) 1999-01-11

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