TW350048B - Non-volatile semiconductor memory and the writing method - Google Patents

Non-volatile semiconductor memory and the writing method

Info

Publication number
TW350048B
TW350048B TW086108317A TW86108317A TW350048B TW 350048 B TW350048 B TW 350048B TW 086108317 A TW086108317 A TW 086108317A TW 86108317 A TW86108317 A TW 86108317A TW 350048 B TW350048 B TW 350048B
Authority
TW
Taiwan
Prior art keywords
critical value
value area
writing
state
volatile semiconductor
Prior art date
Application number
TW086108317A
Other languages
English (en)
Inventor
Keiichi Yoshida
Shiyouji Kubono
Original Assignee
Hitachi Ltd
Hitachi Ulsi Eng Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Ulsi Eng Corp filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW350048B publication Critical patent/TW350048B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
TW086108317A 1996-07-10 1997-06-16 Non-volatile semiconductor memory and the writing method TW350048B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18085996A JP3062730B2 (ja) 1996-07-10 1996-07-10 不揮発性半導体記憶装置および書込み方法

Publications (1)

Publication Number Publication Date
TW350048B true TW350048B (en) 1999-01-11

Family

ID=16090611

Family Applications (2)

Application Number Title Priority Date Filing Date
TW086108317A TW350048B (en) 1996-07-10 1997-06-16 Non-volatile semiconductor memory and the writing method
TW087112838A TW381224B (en) 1996-07-10 1997-06-16 Non-volatile semiconductor memory device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW087112838A TW381224B (en) 1996-07-10 1997-06-16 Non-volatile semiconductor memory device

Country Status (4)

Country Link
US (2) US5959882A (zh)
JP (2) JP3062730B2 (zh)
KR (1) KR980011502A (zh)
TW (2) TW350048B (zh)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100460845B1 (ko) * 1995-08-31 2005-05-24 가부시끼가이샤 히다치 세이사꾸쇼 반도체불휘발성기억장치및그것을사용한컴퓨터시스템
JP3062730B2 (ja) * 1996-07-10 2000-07-12 株式会社日立製作所 不揮発性半導体記憶装置および書込み方法
JP4090570B2 (ja) * 1998-06-02 2008-05-28 株式会社ルネサステクノロジ 半導体装置、データ処理システム及び不揮発性メモリセルの閾値変更方法
JP2000021185A (ja) 1998-06-30 2000-01-21 Sharp Corp 不揮発性半導体メモリの書込み方法
JP4023953B2 (ja) 1999-06-22 2007-12-19 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
USRE40110E1 (en) 1999-09-20 2008-02-26 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device for storing multivalued data
JP2001093288A (ja) * 1999-09-20 2001-04-06 Toshiba Corp 不揮発性半導体記憶装置
JP2001126490A (ja) 1999-10-25 2001-05-11 Hitachi Ltd 不揮発性半導体多値記憶装置の書込み方法
JP4299428B2 (ja) * 2000-01-19 2009-07-22 三星電子株式会社 可変容量半導体記憶装置
US6343033B1 (en) 2000-02-25 2002-01-29 Advanced Micro Devices, Inc. Variable pulse width memory programming
US6219276B1 (en) * 2000-02-25 2001-04-17 Advanced Micro Devices, Inc. Multilevel cell programming
US6240015B1 (en) * 2000-04-07 2001-05-29 Taiwan Semiconductor Manufacturing Corporation Method for reading 2-bit ETOX cells using gate induced drain leakage current
JP4503142B2 (ja) * 2000-06-14 2010-07-14 株式会社ルネサステクノロジ 半導体記憶装置
JP4641338B2 (ja) * 2000-08-29 2011-03-02 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びシステム
JP3922516B2 (ja) * 2000-09-28 2007-05-30 株式会社ルネサステクノロジ 不揮発性メモリと不揮発性メモリの書き込み方法
JP4082482B2 (ja) 2000-12-11 2008-04-30 株式会社ルネサステクノロジ 記憶システムおよびデータ処理システム
US6556481B1 (en) 2001-02-21 2003-04-29 Aplus Flash Technology, Inc. 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
US6620682B1 (en) 2001-02-27 2003-09-16 Aplus Flash Technology, Inc. Set of three level concurrent word line bias conditions for a nor type flash memory array
JP2002269065A (ja) * 2001-03-08 2002-09-20 Mitsubishi Electric Corp プログラム可能な不揮発性メモリを内蔵したマイクロコンピュータ
KR100390959B1 (ko) * 2001-06-29 2003-07-12 주식회사 하이닉스반도체 센싱회로를 이용한 멀티레벨 플래시 메모리 프로그램/리드방법
JP3850791B2 (ja) * 2001-12-20 2006-11-29 株式会社東芝 不揮発性半導体記憶装置
WO2003073432A1 (fr) * 2002-02-28 2003-09-04 Renesas Technology Corp. Unite de memoire a semi-conducteurs non volatile
JP2003346485A (ja) * 2002-05-23 2003-12-05 Fujitsu Ltd 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の書き込み方法
US6862223B1 (en) * 2002-07-05 2005-03-01 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
KR100476930B1 (ko) * 2002-09-04 2005-03-16 삼성전자주식회사 피이크전류를 줄이는 플래쉬메모리
JP2004171686A (ja) 2002-11-20 2004-06-17 Renesas Technology Corp 不揮発性半導体記憶装置およびそのデータ消去方法
EP1473739A1 (en) * 2003-04-29 2004-11-03 Dialog Semiconductor GmbH Flash memory with pre-detection for data loss
JP4637512B2 (ja) 2003-11-13 2011-02-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2007149291A (ja) * 2005-11-30 2007-06-14 Sharp Corp 不揮発性半導体記憶装置及び書き込み方法
JP4233563B2 (ja) * 2005-12-28 2009-03-04 パナソニック株式会社 多値データを記憶する不揮発性半導体記憶装置
KR100719381B1 (ko) * 2006-03-31 2007-05-18 삼성전자주식회사 어드레스 설정 플래그를 갖는 멀티 레벨 셀 낸드형 플래시메모리
JP4750655B2 (ja) * 2006-09-12 2011-08-17 Ｏｋｉセミコンダクタ株式会社 半導体不揮発性メモリ、データ書き込み方法、半導体不揮発性メモリの製造方法、及びデータ書き込みプログラム
JP2008085196A (ja) 2006-09-28 2008-04-10 Oki Electric Ind Co Ltd 半導体不揮発性メモリ、データ書き込み方法、半導体不揮発性メモリの製造方法、及びデータ書き込みプログラム
US7609548B2 (en) 2006-09-29 2009-10-27 Hynix Semiconductor Inc. Method of programming a multi level cell
KR100908518B1 (ko) * 2006-09-29 2009-07-20 주식회사 하이닉스반도체 멀티 레벨 셀의 프로그램 방법
US8189396B2 (en) * 2006-12-14 2012-05-29 Mosaid Technologies Incorporated Word line driver in a hierarchical NOR flash memory
JP4524486B2 (ja) * 2007-06-01 2010-08-18 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7489543B1 (en) * 2007-07-25 2009-02-10 Micron Technology, Inc. Programming multilevel cell memory arrays
US8565019B2 (en) * 2007-11-20 2013-10-22 Kabushiki Kaisha Toshiba Method for controlling threshold value in nonvolatile semiconductor memory device
JP5363154B2 (ja) 2009-03-19 2013-12-11 ラピスセミコンダクタ株式会社 半導体不揮発性メモリ、半導体不揮発性メモリの電荷蓄積方法、及び電荷蓄積プログラム
JP2011070717A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 不揮発性半導体記憶装置
US8429335B2 (en) * 2009-10-13 2013-04-23 Macronix International Co., Ltd. Memory device and operation method to selectively invert data
JP5426600B2 (ja) 2011-03-30 2014-02-26 株式会社東芝 半導体メモリ
KR102363382B1 (ko) * 2017-09-26 2022-02-16 에스케이하이닉스 주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 포함하는 데이터 저장 장치

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4435786A (en) 1981-11-23 1984-03-06 Fairchild Camera And Instrument Corporation Self-refreshing memory cell
JPS59121696A (ja) 1982-12-28 1984-07-13 Toshiba Corp 不揮発性半導体メモリ
JPS626493A (ja) * 1985-06-29 1987-01-13 Ricoh Co Ltd 書込みと消去が可能な半導体メモリ装置
FR2605447B1 (fr) * 1986-10-20 1988-12-09 Eurotechnique Sa Memoire non volatile programmable electriquement
JPH01134793A (ja) 1987-11-20 1989-05-26 Hitachi Ltd 不揮発性半導体記憶装置
FR2630573B1 (fr) * 1988-04-26 1990-07-13 Sgs Thomson Microelectronics Memoire programmable electriquement avec plusieurs bits d'information par cellule
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
JPH0359886A (ja) * 1989-07-27 1991-03-14 Nec Corp 電気的に消去及び書込み可能な不揮発性メモリ
US5200920A (en) * 1990-02-08 1993-04-06 Altera Corporation Method for programming programmable elements in programmable devices
JPH0457294A (ja) 1990-06-22 1992-02-25 Ricoh Co Ltd プログラム可能な不揮発性半導体メモリ装置
JPH04238196A (ja) 1991-01-22 1992-08-26 Nec Ic Microcomput Syst Ltd Ｅｐｒｏｍ回路
JP3152720B2 (ja) * 1991-03-12 2001-04-03 株式会社東芝 不揮発性半導体記憶装置
US5602789A (en) * 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
JPH08249893A (ja) * 1995-03-07 1996-09-27 Toshiba Corp 半導体記憶装置
JP2647321B2 (ja) * 1991-12-19 1997-08-27 株式会社東芝 不揮発性半導体記憶装置及びこれを用いた記憶システム
US5490107A (en) * 1991-12-27 1996-02-06 Fujitsu Limited Nonvolatile semiconductor memory
US5365486A (en) * 1992-12-16 1994-11-15 Texas Instruments Incorporated Method and circuitry for refreshing a flash electrically erasable, programmable read only memory
US5555204A (en) * 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5563823A (en) * 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3226677B2 (ja) * 1993-09-21 2001-11-05 株式会社東芝 不揮発性半導体記憶装置
JP3999822B2 (ja) * 1993-12-28 2007-10-31 株式会社東芝 記憶システム
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
JPH07320488A (ja) * 1994-05-19 1995-12-08 Hitachi Ltd 一括消去型不揮発性記憶装置とその消去方法
US5450363A (en) * 1994-06-02 1995-09-12 Intel Corporation Gray coding for a multilevel cell memory system
JP3199989B2 (ja) * 1994-09-30 2001-08-20 株式会社東芝 不揮発性半導体記憶装置とその過書込み救済方法
JP2701757B2 (ja) * 1994-10-20 1998-01-21 日本電気株式会社 半導体記憶装置の書き込み方法
JP2755197B2 (ja) * 1995-01-13 1998-05-20 日本電気株式会社 半導体不揮発性記憶装置
US5889698A (en) * 1995-01-31 1999-03-30 Hitachi, Ltd. Nonvolatile memory device and refreshing method
JPH08316343A (ja) * 1995-05-17 1996-11-29 Toshiba Corp 不揮発性半導体記憶装置
JP3170437B2 (ja) * 1995-09-20 2001-05-28 株式会社日立製作所 不揮発性半導体多値記憶装置
US5687114A (en) * 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
KR0172401B1 (ko) * 1995-12-07 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 장치
KR0172408B1 (ko) * 1995-12-11 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 및 그의 구동방법
US5677869A (en) * 1995-12-14 1997-10-14 Intel Corporation Programming flash memory using strict ordering of states
JPH09180473A (ja) * 1995-12-27 1997-07-11 Nec Corp 不揮発性半導体メモリ装置
US5748533A (en) * 1996-03-26 1998-05-05 Invoice Technology, Inc. Read circuit which uses a coarse-to-fine search when reading the threshold voltage of a memory cell
US5777923A (en) * 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
JP3740212B2 (ja) * 1996-05-01 2006-02-01 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3180669B2 (ja) * 1996-06-03 2001-06-25 日本電気株式会社 不揮発性半導体メモリおよびその書き込み方法
US5754469A (en) * 1996-06-14 1998-05-19 Macronix International Co., Ltd. Page mode floating gate memory device storing multiple bits per cell
WO1997050089A1 (en) * 1996-06-24 1997-12-31 Advanced Micro Devices, Inc. A method for a multiple bits-per-cell flash eeprom with page mode program and read
JP3062730B2 (ja) * 1996-07-10 2000-07-12 株式会社日立製作所 不揮発性半導体記憶装置および書込み方法
US5675537A (en) * 1996-08-22 1997-10-07 Advanced Micro Devices, Inc. Erase method for page mode multiple bits-per-cell flash EEPROM
US5864569A (en) * 1996-10-18 1999-01-26 Micron Technology, Inc. Method and apparatus for performing error correction on data read from a multistate memory

Also Published As

Publication number Publication date
TW381224B (en) 2000-02-01
JPH11195299A (ja) 1999-07-21
JPH1027486A (ja) 1998-01-27
US6525960B2 (en) 2003-02-25
US5959882A (en) 1999-09-28
JP3062730B2 (ja) 2000-07-12
JP3993323B2 (ja) 2007-10-17
KR980011502A (ko) 1998-04-30
US20020181279A1 (en) 2002-12-05

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