TW326569B - ROM-type semiconductor memory device with large operating margin - Google Patents

ROM-type semiconductor memory device with large operating margin

Info

Publication number
TW326569B
TW326569B TW085111997A TW85111997A TW326569B TW 326569 B TW326569 B TW 326569B TW 085111997 A TW085111997 A TW 085111997A TW 85111997 A TW85111997 A TW 85111997A TW 326569 B TW326569 B TW 326569B
Authority
TW
Taiwan
Prior art keywords
memory cell
power supplier
node
cell array
voltage
Prior art date
Application number
TW085111997A
Other languages
English (en)
Inventor
Kiyokazu Hashimoto
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW326569B publication Critical patent/TW326569B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
TW085111997A 1995-09-28 1996-10-02 ROM-type semiconductor memory device with large operating margin TW326569B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27484395A JP2800740B2 (ja) 1995-09-28 1995-09-28 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW326569B true TW326569B (en) 1998-02-11

Family

ID=17547365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085111997A TW326569B (en) 1995-09-28 1996-10-02 ROM-type semiconductor memory device with large operating margin

Country Status (4)

Country Link
US (1) US5717640A (zh)
JP (1) JP2800740B2 (zh)
KR (1) KR100215349B1 (zh)
TW (1) TW326569B (zh)

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US5726934A (en) * 1996-04-09 1998-03-10 Information Storage Devices, Inc. Method and apparatus for analog reading values stored in floating gate structures
EP0814480B1 (en) * 1996-06-18 2003-12-17 STMicroelectronics S.r.l. Method and circuit for reading low-supply-voltage nonvolatile memory cells
JP3602939B2 (ja) 1996-11-19 2004-12-15 松下電器産業株式会社 半導体記憶装置
FR2760888B1 (fr) * 1997-03-11 1999-05-07 Sgs Thomson Microelectronics Circuit de lecture pour memoire adapte a la mesure des courants de fuite
US5805500A (en) * 1997-06-18 1998-09-08 Sgs-Thomson Microelectronics S.R.L. Circuit and method for generating a read reference signal for nonvolatile memory cells
IT1295910B1 (it) * 1997-10-31 1999-05-28 Sgs Thomson Microelectronics Circuito di lettura per memorie non volatili
KR100339024B1 (ko) * 1998-03-28 2002-09-18 주식회사 하이닉스반도체 플래쉬메모리장치의센스앰프회로
JP3237610B2 (ja) * 1998-05-19 2001-12-10 日本電気株式会社 不揮発性半導体記憶装置
KR100505454B1 (ko) * 1998-06-30 2005-11-08 주식회사 하이닉스반도체 반도체 장치의 데이터 출력 회로 및 방법
JP3116921B2 (ja) * 1998-09-22 2000-12-11 日本電気株式会社 半導体記憶装置
US6956779B2 (en) * 1999-01-14 2005-10-18 Silicon Storage Technology, Inc. Multistage autozero sensing for a multilevel non-volatile memory integrated circuit system
US7031214B2 (en) * 1999-01-14 2006-04-18 Silicon Storage Technology, Inc. Digital multilevel memory system having multistage autozero sensing
US6975539B2 (en) * 1999-01-14 2005-12-13 Silicon Storage Technology, Inc. Digital multilevel non-volatile memory system
US7139196B2 (en) * 1999-01-14 2006-11-21 Silicon Storage Technology, Inc. Sub-volt sensing for digital multilevel flash memory
JP3578661B2 (ja) * 1999-05-07 2004-10-20 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置
KR100300549B1 (ko) * 1999-06-16 2001-11-01 김영환 비휘발성 메모리 센싱장치 및 방법
US6232801B1 (en) * 1999-08-04 2001-05-15 Vlsi Technology, Inc. Comparators and comparison methods
KR100331549B1 (ko) * 1999-08-06 2002-04-06 윤종용 더미 비트 라인을 이용한 전류 센스 앰프 회로
KR100347067B1 (ko) * 1999-12-06 2002-08-03 삼성전자 주식회사 안정된 읽기 동작을 수행하는 반도체 메모리 장치
US6542409B2 (en) * 2001-07-19 2003-04-01 Fujitsu Limited System for reference current tracking in a semiconductor device
DE10162260B4 (de) * 2001-12-18 2006-04-06 Infineon Technologies Ag Integrierter Speicher mit einer Vorladeschaltung zur Vorladung einer Bitleitung
US6590804B1 (en) * 2002-07-16 2003-07-08 Hewlett-Packard Development Company, L.P. Adjustable current mode differential amplifier
ITTO20030121A1 (it) * 2003-02-18 2004-08-19 St Microelectronics Srl Amplificatore di lettura di celle di memoria non volatili a
US20050010284A1 (en) * 2003-07-10 2005-01-13 Gregory Kenton W. Method for decreasing bioprosthetic implant failure
JP2005116065A (ja) * 2003-10-08 2005-04-28 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置及び読出方法
KR100618840B1 (ko) * 2004-06-29 2006-09-01 삼성전자주식회사 저 전원전압 플래쉬 메모리장치의 감지회로
US7312641B2 (en) * 2004-12-28 2007-12-25 Spansion Llc Sense amplifiers with high voltage swing
JP2007087512A (ja) * 2005-09-22 2007-04-05 Nec Electronics Corp 不揮発性半導体記憶装置、及び、不揮発性半導体記憶装置の動作方法
JP4795994B2 (ja) * 2007-03-01 2011-10-19 シャープ株式会社 半導体記憶装置およびこれを備えた電子機器
TWI334604B (en) * 2007-06-25 2010-12-11 Ind Tech Res Inst Sensing circuits of phase change memory
JP2009129472A (ja) * 2007-11-20 2009-06-11 Toshiba Corp 半導体記憶装置
US7838342B2 (en) * 2008-06-06 2010-11-23 Spansion Llc Memory device and method
US7983089B2 (en) * 2008-06-06 2011-07-19 Spansion Llc Sense amplifier with capacitance-coupled differential sense amplifier
US7830716B2 (en) * 2008-06-06 2010-11-09 Spansion Llc Non-volatile memory string module with buffer and method
JP5702175B2 (ja) * 2011-02-02 2015-04-15 ラピスセミコンダクタ株式会社 メモリ装置
US9437257B2 (en) * 2012-12-31 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Sensing circuit, memory device and data detecting method
CN104240746B (zh) * 2013-06-24 2017-07-28 华邦电子股份有限公司 读取电路及具有读取电路的记忆装置
US9773537B2 (en) * 2015-10-27 2017-09-26 Nxp Usa, Inc. Sense path circuitry suitable for magnetic tunnel junction memories
US9659622B1 (en) 2016-01-22 2017-05-23 Nxp Usa, Inc. Sense amplifier

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60150297A (ja) * 1984-01-13 1985-08-07 Nec Corp 記憶装置
JPS62197996A (ja) * 1986-02-24 1987-09-01 Toshiba Corp 半導体メモリのセンスアンプ
JPH0752592B2 (ja) * 1989-08-18 1995-06-05 株式会社東芝 半導体記憶装置
JP2616109B2 (ja) * 1990-03-12 1997-06-04 日本電気株式会社 半導体記憶装置
JP2586722B2 (ja) * 1990-10-11 1997-03-05 日本電気株式会社 半導体記憶装置
JP2812039B2 (ja) * 1992-02-28 1998-10-15 日本電気株式会社 電気的に書込み・消去可能な不揮発性半導体記憶装置
JP2687852B2 (ja) * 1993-10-13 1997-12-08 日本電気株式会社 半導体メモリ装置

Also Published As

Publication number Publication date
JP2800740B2 (ja) 1998-09-21
JPH0991976A (ja) 1997-04-04
US5717640A (en) 1998-02-10
KR100215349B1 (ko) 1999-08-16
KR970017680A (ko) 1997-04-30

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