TW326093B - Non-volatile semiconductor memory device - Google Patents
Non-volatile semiconductor memory deviceInfo
- Publication number
- TW326093B TW326093B TW086105473A TW86105473A TW326093B TW 326093 B TW326093 B TW 326093B TW 086105473 A TW086105473 A TW 086105473A TW 86105473 A TW86105473 A TW 86105473A TW 326093 B TW326093 B TW 326093B
- Authority
- TW
- Taiwan
- Prior art keywords
- write
- state
- memory cell
- nonvolatile memory
- bit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11074896A JP3740212B2 (ja) | 1996-05-01 | 1996-05-01 | 不揮発性半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW326093B true TW326093B (en) | 1998-02-01 |
Family
ID=14543557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086105473A TW326093B (en) | 1996-05-01 | 1997-04-26 | Non-volatile semiconductor memory device |
Country Status (4)
Country | Link |
---|---|
US (9) | US5870218A (zh) |
JP (1) | JP3740212B2 (zh) |
KR (1) | KR100440561B1 (zh) |
TW (1) | TW326093B (zh) |
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JP3315472B2 (ja) | 1993-04-26 | 2002-08-19 | 新日本製鐵株式会社 | 不揮発性半導体記憶装置 |
JP3626221B2 (ja) | 1993-12-13 | 2005-03-02 | 株式会社東芝 | 不揮発性半導体記憶装置 |
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JP3200006B2 (ja) * | 1996-03-18 | 2001-08-20 | 株式会社東芝 | 不揮発性半導体記憶装置 |
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-
1996
- 1996-05-01 JP JP11074896A patent/JP3740212B2/ja not_active Expired - Fee Related
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1997
- 1997-04-26 TW TW086105473A patent/TW326093B/zh not_active IP Right Cessation
- 1997-04-29 KR KR1019970016128A patent/KR100440561B1/ko not_active IP Right Cessation
- 1997-04-30 US US08/841,612 patent/US5870218A/en not_active Expired - Lifetime
-
1998
- 1998-06-11 US US09/096,457 patent/US5982667A/en not_active Expired - Lifetime
-
1999
- 1999-06-25 US US09/339,960 patent/US6181603B1/en not_active Expired - Lifetime
-
2000
- 2000-11-20 US US09/715,106 patent/US6396736B1/en not_active Expired - Lifetime
-
2002
- 2002-05-28 US US10/154,853 patent/US6771537B2/en not_active Expired - Fee Related
-
2004
- 2004-04-27 US US10/832,311 patent/US7031187B2/en not_active Expired - Fee Related
-
2006
- 2006-01-17 US US11/332,206 patent/US7245532B2/en not_active Expired - Fee Related
- 2006-11-13 US US11/595,880 patent/US7394697B2/en not_active Expired - Fee Related
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2008
- 2008-05-09 US US12/117,918 patent/US20090016102A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20040196730A1 (en) | 2004-10-07 |
US6771537B2 (en) | 2004-08-03 |
US20090016102A1 (en) | 2009-01-15 |
US5982667A (en) | 1999-11-09 |
US20070070702A1 (en) | 2007-03-29 |
US5870218A (en) | 1999-02-09 |
US7031187B2 (en) | 2006-04-18 |
US6181603B1 (en) | 2001-01-30 |
JPH09297996A (ja) | 1997-11-18 |
KR100440561B1 (ko) | 2004-10-12 |
US7394697B2 (en) | 2008-07-01 |
US20060114718A1 (en) | 2006-06-01 |
JP3740212B2 (ja) | 2006-02-01 |
US6396736B1 (en) | 2002-05-28 |
US20020136055A1 (en) | 2002-09-26 |
KR970076867A (ko) | 1997-12-12 |
US7245532B2 (en) | 2007-07-17 |
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