JPH0131313B2 - - Google Patents

Info

Publication number
JPH0131313B2
JPH0131313B2 JP1250681A JP1250681A JPH0131313B2 JP H0131313 B2 JPH0131313 B2 JP H0131313B2 JP 1250681 A JP1250681 A JP 1250681A JP 1250681 A JP1250681 A JP 1250681A JP H0131313 B2 JPH0131313 B2 JP H0131313B2
Authority
JP
Japan
Prior art keywords
switch
gate
terminal
state
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1250681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57128068A (en
Inventor
Koichi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1250681A priority Critical patent/JPS57128068A/ja
Publication of JPS57128068A publication Critical patent/JPS57128068A/ja
Publication of JPH0131313B2 publication Critical patent/JPH0131313B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Storage Device Security (AREA)
JP1250681A 1981-01-30 1981-01-30 Semiconductor memory storage Granted JPS57128068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1250681A JPS57128068A (en) 1981-01-30 1981-01-30 Semiconductor memory storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1250681A JPS57128068A (en) 1981-01-30 1981-01-30 Semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS57128068A JPS57128068A (en) 1982-08-09
JPH0131313B2 true JPH0131313B2 (zh) 1989-06-26

Family

ID=11807229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1250681A Granted JPS57128068A (en) 1981-01-30 1981-01-30 Semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS57128068A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6157099A (ja) * 1984-08-28 1986-03-22 Matsushita Electric Ind Co Ltd Ｅｐｒｏｍ書き込み禁止回路
JPS61140000A (ja) * 1984-12-10 1986-06-27 Nec Corp プログラマブル読出し専用メモリ
JPH0734313B2 (ja) * 1985-08-09 1995-04-12 株式会社日立製作所 Ｉｃメモリ装置
JPS6356749A (ja) * 1986-08-27 1988-03-11 Nec Corp シングルチツプマイクロコンピユ−タ
JP2590172B2 (ja) * 1988-01-13 1997-03-12 富士通株式会社 シングルチップマイクロコンピュータ
WO2004046625A1 (ja) 2002-11-19 2004-06-03 Hoshizaki Electric Co., Ltd. オーガ式製氷機

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538624A (en) * 1978-09-05 1980-03-18 Sanyo Electric Co Ltd Nonvolatile semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538624A (en) * 1978-09-05 1980-03-18 Sanyo Electric Co Ltd Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
JPS57128068A (en) 1982-08-09

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