ATE235094T1 - Stabilisierkreise für mehrere digitale bits - Google Patents

Stabilisierkreise für mehrere digitale bits

Info

Publication number
ATE235094T1
ATE235094T1 AT97922523T AT97922523T ATE235094T1 AT E235094 T1 ATE235094 T1 AT E235094T1 AT 97922523 T AT97922523 T AT 97922523T AT 97922523 T AT97922523 T AT 97922523T AT E235094 T1 ATE235094 T1 AT E235094T1
Authority
AT
Austria
Prior art keywords
memory
charge
memory cells
memory system
predetermined levels
Prior art date
Application number
AT97922523T
Other languages
English (en)
Inventor
George J Korsh
Sakhawat M Khan
Original Assignee
Agate Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agate Semiconductor Inc filed Critical Agate Semiconductor Inc
Application granted granted Critical
Publication of ATE235094T1 publication Critical patent/ATE235094T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Synchronisation In Digital Transmission Systems (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
AT97922523T 1996-04-30 1997-04-28 Stabilisierkreise für mehrere digitale bits ATE235094T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/640,367 US5815439A (en) 1996-04-30 1996-04-30 Stabilization circuits and techniques for storage and retrieval of single or multiple digital bits per memory cell
PCT/US1997/007152 WO1997041640A1 (en) 1996-04-30 1997-04-28 Stabilization circuits for multiple digital bits

Publications (1)

Publication Number Publication Date
ATE235094T1 true ATE235094T1 (de) 2003-04-15

Family

ID=24567961

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97922523T ATE235094T1 (de) 1996-04-30 1997-04-28 Stabilisierkreise für mehrere digitale bits

Country Status (9)

Country Link
US (2) US5815439A (de)
EP (1) EP0896763B1 (de)
JP (1) JP3706146B2 (de)
KR (1) KR100522561B1 (de)
CN (1) CN1126256C (de)
AT (1) ATE235094T1 (de)
DE (1) DE69719968T2 (de)
TW (1) TW345660B (de)
WO (1) WO1997041640A1 (de)

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Also Published As

Publication number Publication date
KR100522561B1 (ko) 2006-01-27
CN1126256C (zh) 2003-10-29
TW345660B (en) 1998-11-21
JP3706146B2 (ja) 2005-10-12
JP2001508218A (ja) 2001-06-19
KR20000065145A (ko) 2000-11-06
DE69719968T2 (de) 2004-01-08
DE69719968D1 (de) 2003-04-24
US5815439A (en) 1998-09-29
EP0896763A1 (de) 1999-02-17
US5901089A (en) 1999-05-04
WO1997041640A1 (en) 1997-11-06
EP0896763A4 (de) 2000-08-16
EP0896763B1 (de) 2003-03-19
CN1268261A (zh) 2000-09-27

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