GB9401227D0 - Non-volatile digital memory device with multi-level storage cells - Google Patents

Non-volatile digital memory device with multi-level storage cells

Info

Publication number
GB9401227D0
GB9401227D0 GB9401227A GB9401227A GB9401227D0 GB 9401227 D0 GB9401227 D0 GB 9401227D0 GB 9401227 A GB9401227 A GB 9401227A GB 9401227 A GB9401227 A GB 9401227A GB 9401227 D0 GB9401227 D0 GB 9401227D0
Authority
GB
United Kingdom
Prior art keywords
memory device
storage cells
digital memory
level storage
volatile digital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB9401227A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MEMORY CORP Ltd
Original Assignee
MEMORY CORP Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MEMORY CORP Ltd filed Critical MEMORY CORP Ltd
Priority to GB9401227A priority Critical patent/GB9401227D0/en
Publication of GB9401227D0 publication Critical patent/GB9401227D0/en
Priority to AU15401/95A priority patent/AU1540195A/en
Priority to PCT/GB1995/000125 priority patent/WO1995020224A1/en
Pending legal-status Critical Current

Links

GB9401227A 1994-01-22 1994-01-22 Non-volatile digital memory device with multi-level storage cells Pending GB9401227D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9401227A GB9401227D0 (en) 1994-01-22 1994-01-22 Non-volatile digital memory device with multi-level storage cells
AU15401/95A AU1540195A (en) 1994-01-22 1995-01-23 Analogue memory system
PCT/GB1995/000125 WO1995020224A1 (en) 1994-01-22 1995-01-23 Analogue memory system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9401227A GB9401227D0 (en) 1994-01-22 1994-01-22 Non-volatile digital memory device with multi-level storage cells

Publications (1)

Publication Number Publication Date
GB9401227D0 true GB9401227D0 (en) 1994-03-16

Family

ID=10749185

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9401227A Pending GB9401227D0 (en) 1994-01-22 1994-01-22 Non-volatile digital memory device with multi-level storage cells

Country Status (3)

Country Link
AU (1) AU1540195A (en)
GB (1) GB9401227D0 (en)
WO (1) WO1995020224A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5687114A (en) 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
US5815439A (en) * 1996-04-30 1998-09-29 Agate Semiconductor, Inc. Stabilization circuits and techniques for storage and retrieval of single or multiple digital bits per memory cell
US6857099B1 (en) * 1996-09-18 2005-02-15 Nippon Steel Corporation Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
US5890198A (en) * 1996-10-22 1999-03-30 Micron Technology, Inc. Intelligent refresh controller for dynamic memory devices
US6487116B2 (en) 1997-03-06 2002-11-26 Silicon Storage Technology, Inc. Precision programming of nonvolatile memory cells
US5870335A (en) 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6075719A (en) * 1999-06-22 2000-06-13 Energy Conversion Devices, Inc. Method of programming phase-change memory element
US6396742B1 (en) 2000-07-28 2002-05-28 Silicon Storage Technology, Inc. Testing of multilevel semiconductor memory
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
US7237074B2 (en) 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7471552B2 (en) * 2003-08-04 2008-12-30 Ovonyx, Inc. Analog phase change memory
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099297A (en) * 1988-02-05 1992-03-24 Emanuel Hazani EEPROM cell structure and architecture with programming and erase terminals shared between several cells
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell

Also Published As

Publication number Publication date
AU1540195A (en) 1995-08-08
WO1995020224A1 (en) 1995-07-27

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