AU1540195A - Analogue memory system - Google Patents
Analogue memory systemInfo
- Publication number
- AU1540195A AU1540195A AU15401/95A AU1540195A AU1540195A AU 1540195 A AU1540195 A AU 1540195A AU 15401/95 A AU15401/95 A AU 15401/95A AU 1540195 A AU1540195 A AU 1540195A AU 1540195 A AU1540195 A AU 1540195A
- Authority
- AU
- Australia
- Prior art keywords
- memory system
- analogue memory
- analogue
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9401227A GB9401227D0 (en) | 1994-01-22 | 1994-01-22 | Non-volatile digital memory device with multi-level storage cells |
GB9401227 | 1994-01-22 | ||
PCT/GB1995/000125 WO1995020224A1 (en) | 1994-01-22 | 1995-01-23 | Analogue memory system |
Publications (1)
Publication Number | Publication Date |
---|---|
AU1540195A true AU1540195A (en) | 1995-08-08 |
Family
ID=10749185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU15401/95A Abandoned AU1540195A (en) | 1994-01-22 | 1995-01-23 | Analogue memory system |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU1540195A (en) |
GB (1) | GB9401227D0 (en) |
WO (1) | WO1995020224A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5687114A (en) | 1995-10-06 | 1997-11-11 | Agate Semiconductor, Inc. | Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell |
US5815439A (en) * | 1996-04-30 | 1998-09-29 | Agate Semiconductor, Inc. | Stabilization circuits and techniques for storage and retrieval of single or multiple digital bits per memory cell |
US6857099B1 (en) * | 1996-09-18 | 2005-02-15 | Nippon Steel Corporation | Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program |
US5890198A (en) * | 1996-10-22 | 1999-03-30 | Micron Technology, Inc. | Intelligent refresh controller for dynamic memory devices |
US6487116B2 (en) | 1997-03-06 | 2002-11-26 | Silicon Storage Technology, Inc. | Precision programming of nonvolatile memory cells |
US5870335A (en) | 1997-03-06 | 1999-02-09 | Agate Semiconductor, Inc. | Precision programming of nonvolatile memory cells |
US6282145B1 (en) | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
US6075719A (en) * | 1999-06-22 | 2000-06-13 | Energy Conversion Devices, Inc. | Method of programming phase-change memory element |
US6396742B1 (en) | 2000-07-28 | 2002-05-28 | Silicon Storage Technology, Inc. | Testing of multilevel semiconductor memory |
US6538922B1 (en) | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
US7237074B2 (en) | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
US7471552B2 (en) | 2003-08-04 | 2008-12-30 | Ovonyx, Inc. | Analog phase change memory |
US7301807B2 (en) | 2003-10-23 | 2007-11-27 | Sandisk Corporation | Writable tracking cells |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5099297A (en) * | 1988-02-05 | 1992-03-24 | Emanuel Hazani | EEPROM cell structure and architecture with programming and erase terminals shared between several cells |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5218569A (en) * | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
-
1994
- 1994-01-22 GB GB9401227A patent/GB9401227D0/en active Pending
-
1995
- 1995-01-23 WO PCT/GB1995/000125 patent/WO1995020224A1/en active Application Filing
- 1995-01-23 AU AU15401/95A patent/AU1540195A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
GB9401227D0 (en) | 1994-03-16 |
WO1995020224A1 (en) | 1995-07-27 |
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