US7589362B1
(en)
*
|
2004-07-01 |
2009-09-15 |
Netlogic Microsystems, Inc. |
Configurable non-volatile logic structure for characterizing an integrated circuit device
|
US7417288B2
(en)
*
|
2005-12-19 |
2008-08-26 |
International Business Machines Corporation |
Substrate solution for back gate controlled SRAM with coexisting logic devices
|
CA2675147C
(en)
*
|
2007-01-10 |
2012-09-11 |
Hemoshear, Llc |
Use of an in vitro hemodynamic endothelial/smooth muscle cell co-culture model to identify new therapeutic targets for vascular disease
|
JP5019436B2
(ja)
*
|
2007-02-22 |
2012-09-05 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路
|
JP2009069921A
(ja)
|
2007-09-11 |
2009-04-02 |
Hitachi Ltd |
マルチプロセッサシステム
|
JP2009070939A
(ja)
*
|
2007-09-12 |
2009-04-02 |
Hitachi Ltd |
半導体集積回路
|
JP2009146243A
(ja)
*
|
2007-12-17 |
2009-07-02 |
Hitachi Ltd |
基板バイアス制御を活用する電力性能最適化コンパイラ及びプロセッサシステム
|
JP4972634B2
(ja)
*
|
2008-12-17 |
2012-07-11 |
株式会社日立製作所 |
半導体装置
|
JP4966956B2
(ja)
*
|
2008-12-22 |
2012-07-04 |
株式会社日立製作所 |
半導体装置
|
WO2010089831A1
(ja)
*
|
2009-02-05 |
2010-08-12 |
シャープ株式会社 |
半導体装置及びその製造方法
|
JP4984179B2
(ja)
|
2009-02-06 |
2012-07-25 |
ソニー株式会社 |
半導体装置
|
FR2944139B1
(fr)
*
|
2009-04-01 |
2011-09-09 |
Commissariat Energie Atomique |
Circuit integre realise en soi presentant des transistors a tensions de seuil distinctes
|
US8273617B2
(en)
|
2009-09-30 |
2012-09-25 |
Suvolta, Inc. |
Electronic devices and systems, and methods for making and using the same
|
US8421162B2
(en)
|
2009-09-30 |
2013-04-16 |
Suvolta, Inc. |
Advanced transistors with punch through suppression
|
CN113903796A
(zh)
|
2009-10-16 |
2022-01-07 |
株式会社半导体能源研究所 |
逻辑电路和半导体器件
|
EP2320454A1
(en)
*
|
2009-11-05 |
2011-05-11 |
S.O.I.Tec Silicon on Insulator Technologies |
Substrate holder and clipping device
|
JP2011108773A
(ja)
*
|
2009-11-16 |
2011-06-02 |
Seiko Epson Corp |
半導体装置
|
FR2953643B1
(fr)
*
|
2009-12-08 |
2012-07-27 |
Soitec Silicon On Insulator |
Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
|
FR2953636B1
(fr)
*
|
2009-12-08 |
2012-02-10 |
Soitec Silicon On Insulator |
Procede de commande d'une cellule memoire dram sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
|
US8508289B2
(en)
*
|
2009-12-08 |
2013-08-13 |
Soitec |
Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
|
FR2957193B1
(fr)
|
2010-03-03 |
2012-04-20 |
Soitec Silicon On Insulator |
Cellule a chemin de donnees sur substrat seoi avec grille de controle arriere enterree sous la couche isolante
|
FR2953641B1
(fr)
*
|
2009-12-08 |
2012-02-10 |
S O I Tec Silicon On Insulator Tech |
Circuit de transistors homogenes sur seoi avec grille de controle arriere enterree sous la couche isolante
|
FR2955203B1
(fr)
*
|
2010-01-14 |
2012-03-23 |
Soitec Silicon On Insulator |
Cellule memoire dont le canal traverse une couche dielectrique enterree
|
FR2955200B1
(fr)
|
2010-01-14 |
2012-07-20 |
Soitec Silicon On Insulator |
Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
|
FR2955204B1
(fr)
*
|
2010-01-14 |
2012-07-20 |
Soitec Silicon On Insulator |
Cellule memoire dram disposant d'un injecteur bipolaire vertical
|
FR2955195B1
(fr)
*
|
2010-01-14 |
2012-03-09 |
Soitec Silicon On Insulator |
Dispositif de comparaison de donnees dans une memoire adressable par contenu sur seoi
|
KR101686089B1
(ko)
|
2010-02-19 |
2016-12-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
FR2957186B1
(fr)
*
|
2010-03-08 |
2012-09-28 |
Soitec Silicon On Insulator |
Cellule memoire de type sram
|
FR2957449B1
(fr)
|
2010-03-11 |
2022-07-15 |
S O I Tec Silicon On Insulator Tech |
Micro-amplificateur de lecture pour memoire
|
FR2958441B1
(fr)
|
2010-04-02 |
2012-07-13 |
Soitec Silicon On Insulator |
Circuit pseudo-inverseur sur seoi
|
EP2375442A1
(en)
|
2010-04-06 |
2011-10-12 |
S.O.I.Tec Silicon on Insulator Technologies |
Method for manufacturing a semiconductor substrate
|
US8530286B2
(en)
|
2010-04-12 |
2013-09-10 |
Suvolta, Inc. |
Low power semiconductor transistor structure and method of fabrication thereof
|
EP2381470B1
(en)
|
2010-04-22 |
2012-08-22 |
Soitec |
Semiconductor device comprising a field-effect transistor in a silicon-on-insulator structure
|
US8569128B2
(en)
|
2010-06-21 |
2013-10-29 |
Suvolta, Inc. |
Semiconductor structure and method of fabrication thereof with mixed metal types
|
US8759872B2
(en)
|
2010-06-22 |
2014-06-24 |
Suvolta, Inc. |
Transistor with threshold voltage set notch and method of fabrication thereof
|
WO2012066745A1
(ja)
*
|
2010-11-15 |
2012-05-24 |
シャープ株式会社 |
薄膜トランジスタ基板及びそれを備えた表示装置並びに薄膜トランジスタ基板の製造方法
|
US8404551B2
(en)
|
2010-12-03 |
2013-03-26 |
Suvolta, Inc. |
Source/drain extension control for advanced transistors
|
JP5661445B2
(ja)
*
|
2010-12-14 |
2015-01-28 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路装置およびその製造方法
|
JP2012129291A
(ja)
*
|
2010-12-14 |
2012-07-05 |
Renesas Electronics Corp |
半導体集積回路装置
|
US8461875B1
(en)
|
2011-02-18 |
2013-06-11 |
Suvolta, Inc. |
Digital circuits having improved transistors, and methods therefor
|
US8525271B2
(en)
|
2011-03-03 |
2013-09-03 |
Suvolta, Inc. |
Semiconductor structure with improved channel stack and method for fabrication thereof
|
US8400219B2
(en)
|
2011-03-24 |
2013-03-19 |
Suvolta, Inc. |
Analog circuits having improved transistors, and methods therefor
|
US8748270B1
(en)
|
2011-03-30 |
2014-06-10 |
Suvolta, Inc. |
Process for manufacturing an improved analog transistor
|
US8796048B1
(en)
|
2011-05-11 |
2014-08-05 |
Suvolta, Inc. |
Monitoring and measurement of thin film layers
|
US8999861B1
(en)
|
2011-05-11 |
2015-04-07 |
Suvolta, Inc. |
Semiconductor structure with substitutional boron and method for fabrication thereof
|
US8811068B1
(en)
|
2011-05-13 |
2014-08-19 |
Suvolta, Inc. |
Integrated circuit devices and methods
|
US8569156B1
(en)
|
2011-05-16 |
2013-10-29 |
Suvolta, Inc. |
Reducing or eliminating pre-amorphization in transistor manufacture
|
JP5364125B2
(ja)
*
|
2011-05-20 |
2013-12-11 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
FR2975803B1
(fr)
*
|
2011-05-24 |
2014-01-10 |
Commissariat Energie Atomique |
Circuit integre realise en soi comprenant des cellules adjacentes de differents types
|
US8735987B1
(en)
|
2011-06-06 |
2014-05-27 |
Suvolta, Inc. |
CMOS gate stack structures and processes
|
FR2976401A1
(fr)
|
2011-06-07 |
2012-12-14 |
St Microelectronics Crolles 2 |
Composant electronique comportant un ensemble de transistors mosfet et procede de fabrication
|
US8995204B2
(en)
|
2011-06-23 |
2015-03-31 |
Suvolta, Inc. |
Circuit devices and methods having adjustable transistor body bias
|
JP5690683B2
(ja)
*
|
2011-07-22 |
2015-03-25 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
US8629016B1
(en)
|
2011-07-26 |
2014-01-14 |
Suvolta, Inc. |
Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
|
WO2013022753A2
(en)
|
2011-08-05 |
2013-02-14 |
Suvolta, Inc. |
Semiconductor devices having fin structures and fabrication methods thereof
|
US8748986B1
(en)
|
2011-08-05 |
2014-06-10 |
Suvolta, Inc. |
Electronic device with controlled threshold voltage
|
US8645878B1
(en)
|
2011-08-23 |
2014-02-04 |
Suvolta, Inc. |
Porting a circuit design from a first semiconductor process to a second semiconductor process
|
US8614128B1
(en)
|
2011-08-23 |
2013-12-24 |
Suvolta, Inc. |
CMOS structures and processes based on selective thinning
|
JP6116149B2
(ja)
|
2011-08-24 |
2017-04-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
CN102956703B
(zh)
*
|
2011-08-31 |
2016-03-30 |
中国科学院微电子研究所 |
半导体器件及其制造方法
|
CN102983140B
(zh)
*
|
2011-09-07 |
2015-07-01 |
中国科学院微电子研究所 |
半导体结构及其制造方法
|
FR2980035B1
(fr)
*
|
2011-09-08 |
2013-10-04 |
Commissariat Energie Atomique |
Circuit integre realise en soi comprenant des cellules adjacentes de differents types
|
US8713511B1
(en)
|
2011-09-16 |
2014-04-29 |
Suvolta, Inc. |
Tools and methods for yield-aware semiconductor manufacturing process target generation
|
CN103000671B
(zh)
*
|
2011-09-16 |
2015-07-15 |
中国科学院微电子研究所 |
Mosfet及其制造方法
|
FR2980640B1
(fr)
*
|
2011-09-26 |
2014-05-02 |
Commissariat Energie Atomique |
Circuit integre en technologie fdsoi avec partage de caisson et moyens de polarisation des plans de masse de dopage opposes presents dans un meme caisson
|
US9236466B1
(en)
|
2011-10-07 |
2016-01-12 |
Mie Fujitsu Semiconductor Limited |
Analog circuits having improved insulated gate transistors, and methods therefor
|
JP5847550B2
(ja)
*
|
2011-11-16 |
2016-01-27 |
ルネサスエレクトロニクス株式会社 |
半導体装置および半導体装置の製造方法
|
FR2983345A1
(fr)
*
|
2011-11-30 |
2013-05-31 |
Soitec Silicon On Insulator |
Grille arriere unifiee
|
US8895327B1
(en)
|
2011-12-09 |
2014-11-25 |
Suvolta, Inc. |
Tipless transistors, short-tip transistors, and methods and circuits therefor
|
US8819603B1
(en)
|
2011-12-15 |
2014-08-26 |
Suvolta, Inc. |
Memory circuits and methods of making and designing the same
|
US8883600B1
(en)
|
2011-12-22 |
2014-11-11 |
Suvolta, Inc. |
Transistor having reduced junction leakage and methods of forming thereof
|
US8599623B1
(en)
|
2011-12-23 |
2013-12-03 |
Suvolta, Inc. |
Circuits and methods for measuring circuit elements in an integrated circuit device
|
US8877619B1
(en)
|
2012-01-23 |
2014-11-04 |
Suvolta, Inc. |
Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
|
US8970289B1
(en)
|
2012-01-23 |
2015-03-03 |
Suvolta, Inc. |
Circuits and devices for generating bi-directional body bias voltages, and methods therefor
|
FR2986373A1
(fr)
*
|
2012-01-31 |
2013-08-02 |
St Microelectronics Crolles 2 |
Circuit electronique comprenant un interrupteur d'alimentation d'un circuit logique
|
US9093550B1
(en)
|
2012-01-31 |
2015-07-28 |
Mie Fujitsu Semiconductor Limited |
Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
|
US9406567B1
(en)
|
2012-02-28 |
2016-08-02 |
Mie Fujitsu Semiconductor Limited |
Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
|
US8863064B1
(en)
|
2012-03-23 |
2014-10-14 |
Suvolta, Inc. |
SRAM cell layout structure and devices therefrom
|
US8866510B2
(en)
*
|
2012-05-02 |
2014-10-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
DE102013022449B3
(de)
*
|
2012-05-11 |
2019-11-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung und elektronisches Gerät
|
FR2991502B1
(fr)
*
|
2012-05-29 |
2014-07-11 |
Commissariat Energie Atomique |
Procede de fabrication d'un circuit integre ayant des tranchees d'isolation avec des profondeurs distinctes
|
FR2991501A1
(fr)
|
2012-05-30 |
2013-12-06 |
Stmicroelectronic Sa |
Circuit integre comportant au moins un port digital de sortie d'impedance reglable, et procede de reglage correspondant
|
US9299698B2
(en)
|
2012-06-27 |
2016-03-29 |
Mie Fujitsu Semiconductor Limited |
Semiconductor structure with multiple transistors having various threshold voltages
|
FR2993404B1
(fr)
*
|
2012-07-13 |
2014-08-22 |
Commissariat Energie Atomique |
Circuit integre sur soi comprenant un thyristor (scr) de protection contre des decharges electrostatiques
|
FR2993405B1
(fr)
|
2012-07-13 |
2014-08-22 |
Commissariat Energie Atomique |
Circuit integre sur soi comprenant un transistor de protection sous-jacent
|
FR2993403B1
(fr)
|
2012-07-13 |
2014-08-22 |
Commissariat Energie Atomique |
Circuit integre sur soi comprenant un triac de protection contre des decharges electrostatiques
|
FR2993402B1
(fr)
|
2012-07-13 |
2018-02-02 |
Commissariat Energie Atomique |
Circuit integre sur soi comprenant une diode laterale de protection contre des decharges electrostatiques
|
US9041105B2
(en)
*
|
2012-07-20 |
2015-05-26 |
International Business Machines Corporation |
Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure
|
US8637955B1
(en)
|
2012-08-31 |
2014-01-28 |
Suvolta, Inc. |
Semiconductor structure with reduced junction leakage and method of fabrication thereof
|
US9112057B1
(en)
|
2012-09-18 |
2015-08-18 |
Mie Fujitsu Semiconductor Limited |
Semiconductor devices with dopant migration suppression and method of fabrication thereof
|
US9041126B2
(en)
|
2012-09-21 |
2015-05-26 |
Mie Fujitsu Semiconductor Limited |
Deeply depleted MOS transistors having a screening layer and methods thereof
|
CN104854698A
(zh)
|
2012-10-31 |
2015-08-19 |
三重富士通半导体有限责任公司 |
具有低变化晶体管外围电路的dram型器件以及相关方法
|
US8816754B1
(en)
|
2012-11-02 |
2014-08-26 |
Suvolta, Inc. |
Body bias circuits and methods
|
US9093997B1
(en)
|
2012-11-15 |
2015-07-28 |
Mie Fujitsu Semiconductor Limited |
Slew based process and bias monitors and related methods
|
US9070477B1
(en)
|
2012-12-12 |
2015-06-30 |
Mie Fujitsu Semiconductor Limited |
Bit interleaved low voltage static random access memory (SRAM) and related methods
|
FR2999802A1
(fr)
*
|
2012-12-14 |
2014-06-20 |
St Microelectronics Sa |
Cellule cmos realisee dans une technologie fd soi
|
US9112484B1
(en)
|
2012-12-20 |
2015-08-18 |
Mie Fujitsu Semiconductor Limited |
Integrated circuit process and bias monitors and related methods
|
US9268885B1
(en)
|
2013-02-28 |
2016-02-23 |
Mie Fujitsu Semiconductor Limited |
Integrated circuit device methods and models with predicted device metric variations
|
US9299801B1
(en)
|
2013-03-14 |
2016-03-29 |
Mie Fujitsu Semiconductor Limited |
Method for fabricating a transistor device with a tuned dopant profile
|
US9444041B2
(en)
|
2013-03-15 |
2016-09-13 |
Globalfoundries Singapore Pte. Ltd. |
Back-gated non-volatile memory cell
|
FR3003690A1
(fr)
*
|
2013-03-22 |
2014-09-26 |
Commissariat Energie Atomique |
Circuit integre sur soi comprenant une matrice de cellules de memoire vive et un circuit peripherique accole
|
US9478571B1
(en)
|
2013-05-24 |
2016-10-25 |
Mie Fujitsu Semiconductor Limited |
Buried channel deeply depleted channel transistor
|
JP6135321B2
(ja)
|
2013-06-14 |
2017-05-31 |
富士通セミコンダクター株式会社 |
半導体装置及びその製造方法
|
FR3007577B1
(fr)
*
|
2013-06-19 |
2015-08-07 |
Commissariat Energie Atomique |
Transistors avec differents niveaux de tensions de seuil et absence de distorsions entre nmos et pmos
|
JP6406926B2
(ja)
|
2013-09-04 |
2018-10-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6076224B2
(ja)
*
|
2013-09-05 |
2017-02-08 |
ルネサスエレクトロニクス株式会社 |
半導体装置およびその製造方法
|
US20150129967A1
(en)
|
2013-11-12 |
2015-05-14 |
Stmicroelectronics International N.V. |
Dual gate fd-soi transistor
|
US9385708B2
(en)
*
|
2014-03-17 |
2016-07-05 |
Stmicroelectronics International N.V. |
Methodology to avoid gate stress for low voltage devices in FDSOI technology
|
US9800204B2
(en)
|
2014-03-19 |
2017-10-24 |
Stmicroelectronics International N.V. |
Integrated circuit capacitor including dual gate silicon-on-insulator transistor
|
CN103928520A
(zh)
*
|
2014-03-21 |
2014-07-16 |
上海新储集成电路有限公司 |
一种背栅调制全耗尽mos器件及其制备方法
|
US9412736B2
(en)
|
2014-06-05 |
2016-08-09 |
Globalfoundries Inc. |
Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias
|
US20150364498A1
(en)
*
|
2014-06-17 |
2015-12-17 |
International Business Machines Corporation |
Back biased transistor and current source biasing
|
US9710006B2
(en)
|
2014-07-25 |
2017-07-18 |
Mie Fujitsu Semiconductor Limited |
Power up body bias circuits and methods
|
FR3024917B1
(fr)
*
|
2014-08-13 |
2016-09-09 |
St Microelectronics Sa |
Procede de minimisation de la tension de fonctionnement d'un point memoire de type sram
|
US9319013B2
(en)
|
2014-08-19 |
2016-04-19 |
Mie Fujitsu Semiconductor Limited |
Operational amplifier input offset correction with transistor threshold voltage adjustment
|
KR102277398B1
(ko)
|
2014-09-17 |
2021-07-16 |
삼성전자주식회사 |
반도체 소자 및 이의 제조 방법
|
KR102278875B1
(ko)
|
2015-01-14 |
2021-07-20 |
삼성디스플레이 주식회사 |
게이트 구동회로 및 이를 포함하는 표시장치
|
US9559665B2
(en)
*
|
2015-06-30 |
2017-01-31 |
Stmicroelectronics International N.V. |
Ultra-low voltage temperature threshold detector
|
US9768254B2
(en)
|
2015-07-30 |
2017-09-19 |
International Business Machines Corporation |
Leakage-free implantation-free ETSOI transistors
|
CN105514113A
(zh)
*
|
2015-11-25 |
2016-04-20 |
上海新储集成电路有限公司 |
一种3d非易失性存储器及其制造方法和降低功耗的方法
|
US9786657B1
(en)
*
|
2016-04-04 |
2017-10-10 |
Globalfoundries Inc. |
Semiconductor structure including a transistor including a gate electrode region provided in a substrate and method for the formation thereof
|
US9923527B2
(en)
*
|
2016-05-06 |
2018-03-20 |
Globalfoundries Inc. |
Method, apparatus and system for back gate biasing for FD-SOI devices
|
JP6203915B2
(ja)
*
|
2016-07-14 |
2017-09-27 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
US10192871B2
(en)
*
|
2016-09-23 |
2019-01-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US20180175209A1
(en)
*
|
2016-12-20 |
2018-06-21 |
Globalfoundries Inc. |
Semiconductor structure including one or more nonvolatile memory cells and method for the formation thereof
|
EP3343763B1
(en)
*
|
2016-12-29 |
2019-11-06 |
GN Hearing A/S |
Output driver comprising mos switches with adjustable back gate biasing
|
US10079597B1
(en)
*
|
2017-03-15 |
2018-09-18 |
Globalfoundries Inc. |
Circuit tuning scheme for FDSOI
|
US10043826B1
(en)
|
2017-07-26 |
2018-08-07 |
Qualcomm Incorporated |
Fully depleted silicon on insulator integration
|
JP7160834B2
(ja)
|
2017-12-08 |
2022-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
CN108054132A
(zh)
*
|
2017-12-13 |
2018-05-18 |
上海华虹宏力半导体制造有限公司 |
半导体器件及其制备方法
|
CN108133963B
(zh)
*
|
2017-12-21 |
2020-09-01 |
南京溧水高新创业投资管理有限公司 |
场效应管及其制作方法
|
CN110197680B
(zh)
*
|
2018-02-24 |
2021-11-23 |
上海磁宇信息科技有限公司 |
一种采用全耗尽绝缘硅fd-soi场效应管的mram存储芯片
|
JPWO2019220265A1
(ja)
*
|
2018-05-17 |
2021-07-08 |
株式会社半導体エネルギー研究所 |
表示パネル、表示装置、入出力装置、情報処理装置
|
US10389359B1
(en)
|
2018-10-03 |
2019-08-20 |
Micron Technology, Inc. |
Buffer circuit
|
CN113299669A
(zh)
*
|
2021-05-24 |
2021-08-24 |
天津市滨海新区微电子研究院 |
基于部分耗尽型绝缘体上硅的神经元结构及其工作方法
|
CN116347896B
(zh)
*
|
2023-03-28 |
2023-10-20 |
北京超弦存储器研究院 |
半导体结构、存储器及其制作方法、电子设备
|
CN117199137A
(zh)
*
|
2023-09-18 |
2023-12-08 |
先之科半导体科技(东莞)有限公司 |
一种具有脉冲功率放大器的场效应晶体管
|