FR2957186B1 - Cellule memoire de type sram - Google Patents

Cellule memoire de type sram

Info

Publication number
FR2957186B1
FR2957186B1 FR1051652A FR1051652A FR2957186B1 FR 2957186 B1 FR2957186 B1 FR 2957186B1 FR 1051652 A FR1051652 A FR 1051652A FR 1051652 A FR1051652 A FR 1051652A FR 2957186 B1 FR2957186 B1 FR 2957186B1
Authority
FR
France
Prior art keywords
memory cell
sram type
sram
type
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1051652A
Other languages
English (en)
Other versions
FR2957186A1 (fr
Inventor
Carlos Mazure
Richard Ferrant
Bich-Yen Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1051652A priority Critical patent/FR2957186B1/fr
Priority to US13/039,167 priority patent/US8575697B2/en
Priority to EP11156833.3A priority patent/EP2365520A3/fr
Priority to TW100107370A priority patent/TWI474319B/zh
Priority to KR1020110020044A priority patent/KR101224948B1/ko
Priority to SG2011016151A priority patent/SG174685A1/en
Priority to CN201110054823.9A priority patent/CN102194516B/zh
Priority to JP2011050489A priority patent/JP2011205092A/ja
Publication of FR2957186A1 publication Critical patent/FR2957186A1/fr
Application granted granted Critical
Publication of FR2957186B1 publication Critical patent/FR2957186B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
FR1051652A 2010-03-08 2010-03-08 Cellule memoire de type sram Active FR2957186B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1051652A FR2957186B1 (fr) 2010-03-08 2010-03-08 Cellule memoire de type sram
US13/039,167 US8575697B2 (en) 2010-03-08 2011-03-02 SRAM-type memory cell
EP11156833.3A EP2365520A3 (fr) 2010-03-08 2011-03-03 Cellule mémoire de type SRAM
TW100107370A TWI474319B (zh) 2010-03-08 2011-03-04 靜態隨機存取記憶體型態之記憶體胞元及其製造與控制之方法
KR1020110020044A KR101224948B1 (ko) 2010-03-08 2011-03-07 Ｓｒａｍ-타입 메모리 셀
SG2011016151A SG174685A1 (en) 2010-03-08 2011-03-07 Sram-type memory cell
CN201110054823.9A CN102194516B (zh) 2010-03-08 2011-03-07 Sram型存储器单元
JP2011050489A JP2011205092A (ja) 2010-03-08 2011-03-08 Ｓｒａｍメモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1051652A FR2957186B1 (fr) 2010-03-08 2010-03-08 Cellule memoire de type sram

Publications (2)

Publication Number Publication Date
FR2957186A1 FR2957186A1 (fr) 2011-09-09
FR2957186B1 true FR2957186B1 (fr) 2012-09-28

Family

ID=42829376

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1051652A Active FR2957186B1 (fr) 2010-03-08 2010-03-08 Cellule memoire de type sram

Country Status (8)

Country Link
US (1) US8575697B2 (fr)
EP (1) EP2365520A3 (fr)
JP (1) JP2011205092A (fr)
KR (1) KR101224948B1 (fr)
CN (1) CN102194516B (fr)
FR (1) FR2957186B1 (fr)
SG (1) SG174685A1 (fr)
TW (1) TWI474319B (fr)

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FR2974666B1 (fr) 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor de precharge dedie
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US9490241B2 (en) * 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US9048136B2 (en) * 2011-10-26 2015-06-02 GlobalFoundries, Inc. SRAM cell with individual electrical device threshold control
US9029956B2 (en) * 2011-10-26 2015-05-12 Global Foundries, Inc. SRAM cell with individual electrical device threshold control
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FR2983345A1 (fr) * 2011-11-30 2013-05-31 Soitec Silicon On Insulator Grille arriere unifiee
US9111635B2 (en) * 2013-01-25 2015-08-18 Qualcomm Incorporated Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methods
US9111801B2 (en) * 2013-04-04 2015-08-18 Stmicroelectronics, Inc. Integrated circuit devices and fabrication techniques
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US10062680B2 (en) 2014-05-08 2018-08-28 Qualcomm Incorporated Silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) standard library cell circuits having a gate back-bias rail(s), and related systems and methods
US9659933B2 (en) * 2015-04-27 2017-05-23 Stmicroelectronics International N.V. Body bias multiplexer for stress-free transmission of positive and negative supplies
US9634697B2 (en) 2015-09-09 2017-04-25 Qualcomm Incorporated Antenna selection and tuning
US10062701B2 (en) * 2016-11-24 2018-08-28 United Microelectronics Corp. Static random access memory unit cell
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CN112581988A (zh) * 2020-12-15 2021-03-30 中国科学院上海微系统与信息技术研究所 静态随机存储器单元以及存储器

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SG174685A1 (en) 2011-10-28
CN102194516A (zh) 2011-09-21
US20110233675A1 (en) 2011-09-29
CN102194516B (zh) 2015-07-29
FR2957186A1 (fr) 2011-09-09
US8575697B2 (en) 2013-11-05
EP2365520A2 (fr) 2011-09-14
EP2365520A3 (fr) 2013-09-11
TW201203247A (en) 2012-01-16
KR101224948B1 (ko) 2013-01-22
TWI474319B (zh) 2015-02-21
JP2011205092A (ja) 2011-10-13

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