FR2975803B1 - Circuit integre realise en soi comprenant des cellules adjacentes de differents types - Google Patents

Circuit integre realise en soi comprenant des cellules adjacentes de differents types

Info

Publication number
FR2975803B1
FR2975803B1 FR1154520A FR1154520A FR2975803B1 FR 2975803 B1 FR2975803 B1 FR 2975803B1 FR 1154520 A FR1154520 A FR 1154520A FR 1154520 A FR1154520 A FR 1154520A FR 2975803 B1 FR2975803 B1 FR 2975803B1
Authority
FR
France
Prior art keywords
integrated circuit
casings
self
doping
different types
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1154520A
Other languages
English (en)
Other versions
FR2975803A1 (fr
Inventor
Jean-Philippe Noel
Olivier Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1154520A priority Critical patent/FR2975803B1/fr
Priority to FR1158545A priority patent/FR2975828B1/fr
Priority to EP12721876.6A priority patent/EP2715789A1/fr
Priority to PCT/EP2012/059519 priority patent/WO2012160071A1/fr
Priority to US14/118,955 priority patent/US8969967B2/en
Publication of FR2975803A1 publication Critical patent/FR2975803A1/fr
Application granted granted Critical
Publication of FR2975803B1 publication Critical patent/FR2975803B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
FR1154520A 2011-05-24 2011-05-24 Circuit integre realise en soi comprenant des cellules adjacentes de differents types Expired - Fee Related FR2975803B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1154520A FR2975803B1 (fr) 2011-05-24 2011-05-24 Circuit integre realise en soi comprenant des cellules adjacentes de differents types
FR1158545A FR2975828B1 (fr) 2011-05-24 2011-09-26 Circuit integre realise en soi comprenant des cellules adjacentes de differents types
EP12721876.6A EP2715789A1 (fr) 2011-05-24 2012-05-22 Circuit integre realise en soi comprenant des cellules adjacentes de differents types
PCT/EP2012/059519 WO2012160071A1 (fr) 2011-05-24 2012-05-22 Circuit integre realise en soi comprenant des cellules adjacentes de differents types
US14/118,955 US8969967B2 (en) 2011-05-24 2012-05-22 Self-contained integrated circuit including adjacent cells of different types

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1154520A FR2975803B1 (fr) 2011-05-24 2011-05-24 Circuit integre realise en soi comprenant des cellules adjacentes de differents types

Publications (2)

Publication Number Publication Date
FR2975803A1 FR2975803A1 (fr) 2012-11-30
FR2975803B1 true FR2975803B1 (fr) 2014-01-10

Family

ID=45319293

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1154520A Expired - Fee Related FR2975803B1 (fr) 2011-05-24 2011-05-24 Circuit integre realise en soi comprenant des cellules adjacentes de differents types
FR1158545A Expired - Fee Related FR2975828B1 (fr) 2011-05-24 2011-09-26 Circuit integre realise en soi comprenant des cellules adjacentes de differents types

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR1158545A Expired - Fee Related FR2975828B1 (fr) 2011-05-24 2011-09-26 Circuit integre realise en soi comprenant des cellules adjacentes de differents types

Country Status (4)

Country Link
US (1) US8969967B2 (fr)
EP (1) EP2715789A1 (fr)
FR (2) FR2975803B1 (fr)
WO (1) WO2012160071A1 (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2996956B1 (fr) * 2012-10-12 2016-12-09 Commissariat Energie Atomique Circuit integre comportant des transistors avec des tensions de seuil differentes
FR2999746B1 (fr) 2012-12-13 2018-04-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de generation d'une topographie d'un circuit integre fdsoi
FR3000295B1 (fr) 2012-12-26 2015-02-27 Commissariat Energie Atomique Circuit integre comprenant une cellule d'arbre d'horloge
FR3000296B1 (fr) 2012-12-26 2015-02-27 Commissariat Energie Atomique Circuit integre comprenant une cellule d'arbre d'horloge
WO2014131459A1 (fr) * 2013-02-28 2014-09-04 Commissariat à l'énergie atomique et aux énergies alternatives Circuit intégré à double sti à faibles pertes comprenant des transistors fdsoi
WO2014131461A1 (fr) * 2013-02-28 2014-09-04 Commissariat à l'énergie atomique et aux énergies alternatives Circuit intégré sti double comprenant des transistors fdsoi et procédé de fabrication
FR3003685B1 (fr) * 2013-03-21 2015-04-17 St Microelectronics Crolles 2 Procede de modification localisee des contraintes dans un substrat du type soi, en particulier fd soi, et dispositif correspondant
FR3003690A1 (fr) * 2013-03-22 2014-09-26 Commissariat Energie Atomique Circuit integre sur soi comprenant une matrice de cellules de memoire vive et un circuit peripherique accole
FR3003996B1 (fr) * 2013-03-28 2015-04-24 Commissariat Energie Atomique Procede de commande d'un circuit integre
FR3006809A1 (fr) * 2013-06-07 2014-12-12 St Microelectronics Sa Polarisation d'une cellule mos realisee dans une technologie fdsoi
US8987825B2 (en) 2013-06-10 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a double deep well
FR3007577B1 (fr) * 2013-06-19 2015-08-07 Commissariat Energie Atomique Transistors avec differents niveaux de tensions de seuil et absence de distorsions entre nmos et pmos
FR3013148A1 (fr) * 2013-11-13 2015-05-15 St Microelectronics Sa Procede de polarisation de transistors mos realises selon la technologie fdsoi
US9293450B2 (en) * 2014-07-22 2016-03-22 Freescale Semiconductor, Inc. Synthesis of complex cells
FR3025653B1 (fr) * 2014-09-10 2017-12-22 Commissariat Energie Atomique Dispositif a cellules memoires sram comportant des moyens de polarisation des caissons des transistors de lecture des cellules memoires
US9842184B2 (en) 2015-09-11 2017-12-12 Globalfoundries Inc. Method, apparatus and system for using hybrid library track design for SOI technology
DE102016208588A1 (de) * 2015-09-11 2017-03-16 Globalfoundries Inc. Verfahren, Vorrichtung und System zur Verwendung eines Hybridbibliothek-leiterbahndesigns für SOI-Technologien
US10199461B2 (en) * 2015-10-27 2019-02-05 Texas Instruments Incorporated Isolation of circuit elements using front side deep trench etch
US10096595B2 (en) * 2015-10-28 2018-10-09 Globalfoundries Inc. Antenna diode circuit for manufacturing of semiconductor devices
FR3048304B1 (fr) 2016-02-25 2019-03-15 Stmicroelectronics Sa Puce electronique a transistors a grilles avant et arriere
US9831272B2 (en) 2016-03-31 2017-11-28 Qualcomm Incorporated Metal oxide semiconductor cell device architecture with mixed diffusion break isolation trenches
US10002800B2 (en) 2016-05-13 2018-06-19 International Business Machines Corporation Prevention of charging damage in full-depletion devices
FR3054374B1 (fr) * 2016-07-22 2018-08-17 Commissariat Energie Atomique Circuit integre comportant des transistors a tensions de seuil distinctes
US10790272B2 (en) 2017-08-02 2020-09-29 Qualcomm Incorporated Manufacturability (DFM) cells in extreme ultra violet (EUV) technology
WO2021079325A2 (fr) * 2019-10-23 2021-04-29 Vayyar Imaging Ltd. Systèmes et procédés d'amélioration de circuits intégrés de radiofréquence
US11972983B2 (en) 2020-06-24 2024-04-30 Etron Technology, Inc. Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method
US11973120B2 (en) * 2020-06-24 2024-04-30 Etron Technology, Inc. Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method
US11855218B2 (en) 2020-09-09 2023-12-26 Etron Technology, Inc. Transistor structure with metal interconnection directly connecting gate and drain/source regions
FR3118282B1 (fr) * 2020-12-17 2022-12-30 St Microelectronics Crolles 2 Sas Ensemble de cellules precaracterisees integrees
FR3130449A1 (fr) * 2021-12-13 2023-06-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de pilotage de transistors et procédé de pilotage

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US6072217A (en) * 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate
US7112997B1 (en) * 2004-05-19 2006-09-26 Altera Corporation Apparatus and methods for multi-gate silicon-on-insulator transistors
JP4664631B2 (ja) * 2004-08-05 2011-04-06 株式会社東芝 半導体装置及びその製造方法
JP4800700B2 (ja) * 2005-08-01 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体集積回路

Also Published As

Publication number Publication date
US8969967B2 (en) 2015-03-03
EP2715789A1 (fr) 2014-04-09
WO2012160071A1 (fr) 2012-11-29
FR2975803A1 (fr) 2012-11-30
FR2975828B1 (fr) 2014-01-10
FR2975828A1 (fr) 2012-11-30
US20140077300A1 (en) 2014-03-20

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Effective date: 20160129