TW200411717A - Method and apparatus for supporting semiconductor wafers - Google Patents

Method and apparatus for supporting semiconductor wafers Download PDF

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TW200411717A
TW200411717A TW92119294A TW92119294A TW200411717A TW 200411717 A TW200411717 A TW 200411717A TW 92119294 A TW92119294 A TW 92119294A TW 92119294 A TW92119294 A TW 92119294A TW 200411717 A TW200411717 A TW 200411717A
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support
patent application
item
wafer
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TW92119294A
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Bois Dale R Du
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Asml Us Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
  • Control By Computers (AREA)
  • Control Of Resistance Heating (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Fluid Pressure (AREA)
  • Control Of Non-Electrical Variables (AREA)

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200411717 Ο) 玖、發明說明 【發明所屬之技術領域】 本發明係關於用來支撐半導體晶圓之方法及裝置，尤 其’係關於用於小批式爐中支撐沉積及加熱中的半導體晶 圓之方法及裝置。 【先前技術】 爐普遍地使用於各種的工業，包括以半導體基板或晶 圓來製造積體電路或半導體裝置。半導體晶圓的熱處理包 括例如，加熱處理、退火、擴散或掺雜材料的推動、沉積 或材料層的成長，及材料自基板的蝕刻或移除。此些處理 通常需要晶圓在過程中及之前加熱至攝氏2 5 〇至12 0 0度 的高溫。再者，此些處理通常需要晶圓保持在一均勻溫度 於整個過程中，不管處理氣體的溫度起伏或導入處理室中 的速率。 習1知爐通常包括一大容量的處理室定位在爐中或其周 圍。將熱處理的基板係密封於處理室中，然後藉由此爐加 熱至實施處理的想要溫度。用於許多處理，諸如化學蒸汽 沉積’密封的處理室首先蒸發，接著，反應或處理氣體被 導入以形成或沉積反應物件在此基板上。 有數種設計需求符合晶圓位於半導體熱處理裝置內側 的支撐必備條件。例如，受到處理室內側的極高溫度之半 導體晶圓通常經歷熱膨漲。相似地，當處理室冷卻時，晶 圓收縮。沉積過程中，晶圓必須適當地支撐，然而必須不 -4- (2) 200411717 是为：緊固支撐而致使熱膨漲或收縮造成晶圓的 結。晶圓承載器的實例係顯示於U S P 4 7 7 0 5 9 0中 在1 9 8 8年9月13日發給Hugues等人。 再者’支撐及晶圓間的接觸區域（簡單而 的’’足跡”）可限制或阻擋接觸區域中的蒸汽沉積 #或痕跡在晶圓表面上。當形成半導體時，此 域已無效的，且，有效地構成浪費空間在晶圓表 般而言’習知的解決方式沿著晶圓邊緣標示大約 除帶。 因此’需要克服前述問題之裝置及方法。 【發明內容】 一般而言，本發明的實施例採用τ形支撐白 形支撐（”τ形軌”），當觀看綜合性截面圖時， 具有一相當大的半圓部（頭部）在一端，對著一 薄的凸部逐漸變細。於側視截面圖中，凸部較佳 τ形軌的長度而均勻地間隔。每一凸部的頂部在 90度的角度而接觸此半圓部。.例如，於一個實 凸部的頂表面及軌頭部間的角度係9 1度。 包括頭部及串列的凸部之Τ形軌較佳地係以 桿而均勻地產生。於一個實施例中’透明的熔化 用。Τ形軌通常經由二步驟切削過程藉由硏磨此 的。第一步驟藉由製作一對繞著桿的長度的半徑 定頭部及突起。第二步驟藉由沿著突起多次切削 滑動或黏 ，此專利 言，支撐 ，其產生 些陰影區 面上。一 3匪的排 ί]形式。丁 Τ形支撐 串列相當 地係沿著 些微大於 施例中， 單一石英 石英被使 桿而產生 切削而界 成桿的寬 -5 - (3) (3)200411717 度而使每一凸部成形。成爲桿的寬度的每一切削自先前界 定的突起而形成一凸部。 一個或更多T形軌可使用於晶圓托架。晶圓托架通常 容納並支撐一個或更多半導體晶圓用於處理室內側的熱處 理。於晶圓托架的一個實施例中，三個T形軌係附接至圓 柱形底座及半圓頂部。T形軌係沿著底座而間隔的，以使 兩俱U τ形軌係距背τ形軌而大致等距，其中每一組的三 個凸部（每一 T形軌上有一個）形成一位準平面。晶圓係 放置於由一組凸部所界定的每一平面且平衡在凸部上。不 像某些習知技術系統，晶圓僅自底部而支撐，而不是頂部 及底部兩者。此使晶圓表面上承載器痕跡降至最小。 再者，因爲每一凸部係些微背切削，凸部及支撐晶圓 間的接觸表面減小。因此’痕跡再次減小，因爲凸部及晶 圓間的傳熱。最後，因爲每一晶圓係支撐在僅三點，晶圓 自由地熱膨漲及收縮，而不會黏結或滑動於晶圓托架，因 此有助於晶圓在處理中保持置中。 [實施方式】 1 .操作環境 圖1顯示用於本發明的實施例之示範性操作環境，亦 即，半導體小批爐。此爐1 40通常包括處理室〗02，其具 有用來容納托架1 06的支撐1 〇4，具有一批由一串列的τ 形軌100所固持其中之晶圓108 ;及熱源或爐140，具有 一數量的加熱元件1 1 2，用來將晶圓的溫度提升至用於熱 -6 - (4) (4)200411717 處理的想要溫度。爐1 4 0另包括一或更多的光學或電子溫 度感知元件1 1 4，諸如電阻溫度裝置（RTD )熱耦，用來 監視處理室’1 02內的溫度及/或控制加熱元件1 1 2的操 作。此種控制例如，可經由一反饋迴路而予以達成。 於所示的實施例中，溫度感知元件係一側面熱_ 1 1 4，其具有多個獨立的溫度感知節或點，用來檢測處理 室1 〇 2內位在多個位置的溫度。替代地，溫度感知元件可 以是一串列相互無關的針狀熱耦。爐1 40亦可包括一或更 多注入器116，用於將液體、氣體或蒸汽導入處理及/或冷 卻晶圓1 0 8的處理室1 〇 2內；及一或更多通孔或淸洗口 1 1 8 (僅顯示其一），用來將一淸洗元件導入處，理室中。 室墊片1 2 〇可增加接近晶圓1 〇 8之處理氣體或蒸汽的濃 度，且，降低晶圓免於沉積物的剝落或剝離的污染，沉積 物可形成在處理室1 0 2的內部表面上。 通常，處理室1 0 2係藉由諸如〇形環1 2 2的密封件 而卞以毯、封至平台或底板1 2 4，以元全封閉晶圓：1 〇 §於熱 處理中。用於注入器116、熱耦114及淸洗口 118之開口 係使用諸如〇形環、VCR®或CF®gg件的密封件而予以密 封。於處理時知釋放或導入之氣體或蒸汽係經由形成於處 理室]02的壁之排氣口 126或經由底板124的通風系統 1 2 7而予以抽空，如圖1所示。處理室丨〇 2可於熱處理時 而保持在大氣壓力下，或經由包括一或更多個粗加工泵、 鼓風機、高真空泵及粗加工、節流及/或預管道閥之泵送 系統（未顯示）而抽空至接近真空。 -7- (5) (5)200411717 處理室1 02及室墊片1 1〇可以任何金屬、陶瓷、結晶 或破璃材料製成，此材料能夠承受高溫及高真空操作的熱 及機械應力，且對於處理時所使用或釋放的氣體或蒸汽抗 腐融。較佳地，處理室丨〇2係以具有一足夠厚度的不透 明、半透明或透明的石英玻璃而製成，以承受機械應力且 抗拒製程副產物的沉積，藉此減小處理環境的潛在污染。 更佳地，處理室1 〇 2及室墊片1 2 0係以不透明石英製成， 此不透明石英減小或消除離開其中晶圓丨〇 8進行至密封件 122之區或處理帶128之導熱。 依據一個實施例，半導體晶圓載入晶圓托架i 〇 6中， 其包括以三角形排列的三個T形軌1 0 0，每一 T形軌1 0 0 具有數個自其本身突出的凸部。T形軌1 0 0及相關的凸部 通常以單一石英桿而機械加工，且係整體的。一個晶圓放 置於由一組三個凸部所界定的每一平面，每一 T形軌1 〇〇 上有一晶圓，距托架1 0 6的底部等距。晶圓托架1 0 6然後 置入處理室1 02中，其係依序地密封。晶圓的熱處理發生 於此室內，同時晶圓係支撐於托架內側。在處理之後，處 理室I 〇1被開啓，且，晶圓托架1 06移除。於本實施例 中，托架1 0 6的放置及移除係機械地達成，其中托架係藉 由一升降機平台自處理室]02而升入及下降。於替代實方包 例中，托架1 06可經由一側或上口進入處理室1 02，或可 固定於此室內側。 -8 - 1 . T軌結構 (6) (6)200411717 通常，一個實施例包含一機械加工過的石英桿2 00, 如圖2a的側視圖及圖2b的前視圖所示。石英桿200包括 一大致半圓部（”頭部”）2 1 0，自上而下沿著一側而轉 動。如圖3的上而下示意圖所示（圖2b的B-B線），兩 個年徑切削3 00、3 1 0自頭部2 1 0的最寬部向內成角度， 且界定頭部的第一及第二側壁。參考圖2 a及3，半徑切 削大致終止於扁平面2 2 0。 石英桿200另包括數個凸部230其藉由切成或弄平成 桿表面而形成的。每一凸部的側壁3 2 0、3 3 0亦大致半徑 圓弧狀，且可以使用來形成頭部側壁之相周切削過程而予 以形成。每一凸部的頂表面係大致平面，然而底表面沿著 表面的長度可以是平面，然後轉換成半徑圓弧表面。此些 凸部係沿著桿的長度大致平坦間隔，除了桿的底部之外。 一桿2 0 0的底部的詳示圖係顯示於圖4中。 最淸楚地如圖4所示，每一凸部230係石英桿200的 整體元件，而不是以一分開材料而形成且附接至桿表面。 錯由以一連繪的石央件而形成整個t形軌_ 2 0 0，熱係更平 均地分佈於整個t形軌2 0 0，然而凸部2 3 〇咬住或者自主 軌2 00分開的可能性降至最小。 仍爹考圖4 ’本實施例，凸部2 3 〇相對於桿頭部2 j 〇 係些微向下成角度。亦即，凸部在自桿體2 〇 〇向外延伸時 而傾斜。於本實施例中，形成在凸部2 3 〇及桿2 〇 〇的接合 處的頂邰之角度係大約成9 1度。替代實施例可利用不同 角度’只要此角度大於90度。藉由些微反向切削每一凸 -9- (7) (7)200411717 部，凸部及一支撐的晶圓間的表面接觸降至最小。事實 上，於本實施例200中，晶圓有效地平衡在凸部上，以使 僅一單接觸點係形成在每一凸部與此支撐的晶圓之間。藉 著使接觸面積最小化，晶圓及凸部間的傳熱同樣地降至最 小，因此導致更均勻的熱分佈跨過晶圓於處理時。同樣 地，此致使更均勻的沉積及硬化於處理室1 02內側。~ 現在參考圖2 a、3及4，本實施例2 0 0的各種量測將 被給定。應記得，此些量測僅用來解說單一實施例：替代 實施例可使用不同尺寸。 通常，本例的T形軌2 0 0自頂部至底部量測大約 23.255英吋。每一凸部230大約爲120英吋高、120英吋 寬及0.3 8 5英吋深。凸部2 3 0間的空間240在最寬點大約 係〇 . 7 5英吋高，頭部2 1 0係0.7 8 6英吋寬。由凸部2 3 〇 與桿200所形成之頂角度的半徑粗略係n 5英吋，然而 底部角度具有粗略0 · 1 2 0英吋的半徑。最後，桿的底部在 第一凸部2 3 0形成之前延伸約1 . 5英吋。 -10- (8) (8)200411717 熱於任何支撐晶圓與處理室1 0 2之間。各種元件可藉由熟 習此項技藝者所熟知的任何機構而相互附加。如圖5 b所 示，頂部支撐5 3 0係半圓形，其具有大約等於底部支撐 5 2 0的半徑之半徑，然而僅些微延伸在T形軌接合點5 5 0 的前方。 通常，晶圓托架5 1 0係安裝於處理室1 0 2內，且容納 一串列的晶圓，每一晶圓放置於由T形軌5 0 0、5 0 2、5 0 4 的每一者上的共平面凸部2 3 0所界定之獨特平面。因此， 每一晶圓係支撐在三點，此三點有效地平衡在反向切削的 凸部的每一者上且使其間的接觸降至最小。 因爲每一晶圓係支撐在三維空間中的僅三點，而不是 典型習知系統的六點，晶圓不受限於托架5 1 0內。因此， 當處理室1 0 2的溫度改變時，晶圓具有熱膨漲或收縮的自 由度而不會滑動或結合，此導致扭曲或滑動的晶圓。然 而，比起晶圓被夾住或以不同方式固持定位，此相同的移 動自由度使晶圓適當地置中於托架內變得更困難。各凸部 2 3 0上的反向切削角度以及沿著晶圓的一側的圓形邊緣有 助於置中定位。 晶圓係以半圓邊緣上的低點插入晶圓托架5 1 0而放置 在最後面的T形軌5 02的凸部2 3 0上。沿著外緣之晶圓的 半徑僅接觸傾斜的凸部2 3 0的小部份。晶圓的重量集中於 此接觸面積。圓弧狀邊緣以及凸部的傾斜的結合導致晶圓 自動對準於托架5 1 0內。 亦即，當晶圓置入托架時，儘可能插入托架內部。晶 -11 - (9) (9)200411717 圓的側邊藉由作爲導件之側τ形軌5 0 0、5 0 4的凸部2 3 0 而予以支撐。因爲側Τ形軌5 00、5 04防止晶圓引人注目 地自一側轉移至另一'側’沿者離後晶圓壁最遠的彎曲邊緣 (亦即，正對半圓邊緣的晶圓的邊緣）之點位在最後面τ 形軌5 0 2的凸部2 3 0上。 仍參考圖5 a及5 b，用於晶圓托架5 1 0的大致尺寸將 被給定。應注意到，此些量測僅用來解說本實施例；替代 實施例可使用不同尺寸。 通常，托架5 1 0大約1 2.9 9英吋的直徑，其沿著底板 5 4 0而量測。第一排的凸部2 3 0距托架5 1 0的底部大約 1 1.4 6 7英吋’加或減大約〇 . 2英吋。托架的整個高度粗略 爲3 3.2 5 ό英吋。 圖6顯示托架5 1 0的上而下示意圖，其標示τ形軌 5 00、5 02、5 04及頂部支撐5 3 0之間的接觸點。自托架 5 1 〇的中心至任--Τ形軌的中心之距離大約係5 · 9 8英 吋。當相對於晶圓托架5 1 0的中心而量測時，形成在背τ 形軌5 02與任一側Τ形軌5 00、5 (M間的角度係]〇〇度。 因此’本貫施例中兩個側Τ形軌5 0 0、5 04的中心間的距 離不超過約1 I .95 9英吋。再者，不同實施例可具有不同 的量測、尺寸、公差、元件間的關係等。因此，以上的數 字應僅考慮爲本托架5 1 0的範例，而不是界定本發明包含 的所有晶圓托架。 4.Τ形軌的製造 -12- (10) (10)200411717 回到圖2中，T形軌2 0 0的一個實施例係利用藉由一 中央支撐結合一起的一對磨輪而予以製造。此支撐附接至 兩個磨輪的中間，兩者具有大約相同的直徑。磨輪的磨面 通常係相向朝內指向。磨輪沿著石英軌的側自頂部通過至 底部，產生半徑切削，如圖3的示意圖所示。替代地，兩 個未連接的磨輪可使用來產生此些切削，或，單一輪可作 兩個通路。 接著，第二組的磨輪，以如第一組的相同方式而連 接，係使用來產生凸部23 0。第二（底部）輪係一標準磨 輪，而第一（頂部）輪係成角度來產生大約1度反向切 削。此些輪使一連串的切削成爲由第一切削所界定之Τ形 軌2 0 0的窄面，爲了生產各種凸部2 3 0。底部磨輪的間隔 及角度可於操作時而變化，以生產凸部底座的平順彎曲切 口典型，如圖4所示。 磨輪係以能夠以上述的方式切割石英的任何適當材料 而製成。 5 .結論 從上述實施例的說明，熟習此項技藝者將認知到，可 在上述的實施例上作各種變化，而不超過本發明的精神及 範圍。例如，Τ形軌可具有不同的物理量測，或，可以不 同材料而予以製造。再者，雖然本發明已被說明於特定實 施例及過程的內容中，此種說明係經由實例而不是限制。 因此，本發明的適當範圍係由以下申請專利範圍而不是由 -13- (11) (11)200411717 先前的實例而予以指定的。 【圖式簡單說明】 圖1顯示用於本發明的一個實施例之示範性操作環 鏡。 圖2 a顯示依據本發明的一個實施例之τ形支撐（” T 形軌“）的側視圖。 圖2b顯示依據本發明的一個實施例之τ形軌的前視 圖。 Η 3咸不沿者圖2 b的B - B線而依據本發明的—個實 方也例之T形軌的上而下示意圖。 圖4顯示依據本發明的一個實施例之T形軌的基本詳 細圖。 圖5 a顯示依據本發明的一個實施例之晶圓托架的背 視圖。 圖5 b顯示依據本發明的一個實施例之晶调托架的側 視圖。 圖6顯示依據本發明的一個實施例之上而下示意圖。 主要元件對照表 100 T形軌 102處理室 104支撐 106托架 -14- (12) (12)200411717 1 0 8晶圓 1 1 2加熱元件 1 1 4側面熱耦 1 1 6注入器 1 1 8淸洗口 1 20 室墊片 1 2 2 0形環 124底板 1 2 6排氣口 1 2 7通風系統 1 2 8處理帶 1 4 0爐 2 0 0 石英桿 2 1 0半圓部（頭部） 220 扁平面 2 3 0凸部 2 4 0 空間 3 0 0、3 1 0 半徑切削 320、 330 側壁 500、 502、 504 T 形軌 5 1 0晶圓托架 5 2 0底部圓柱形支撐 5 3 0頂部半圓形支撐 5 4 0底板 200411717 (13) 5 5 0 T形軌接合點 RTD電阻溫度裝置

Claims (1)

  1. 200411717 ⑴ 於、申請專利範圍 1.一種用於半導體晶圓的支撐，包含： 一半圓部’運轉該支撐的長度；及 一第一凸部，具有第一頂及底表面，且形成相對該半 圓部，該凸部的寬度小於該半圓部的最寬段；其中 該第一頂表面與該半圓部形成大於90度的角度。 2·如申請專利範圍第〗項之支撐，其中該半圓部及至 少一凸部係以單一材料而整體地形成的。 3.如申請專利範圍第2項之支撐，其中該材料爲熔化 的石英。 4 .如申請專利範圍第3項之支撐，其中該角度係9】 度。 5 ·如申請專利範圍第4項之支撐，其中該第一凸部的 第一側壁爲圓弧狀。 6 ·如申請專利範圍第3項之支撐，另包含具有第二頂 及底表面之第二凸部，該第二頂表面與該半圓部形成大於 9 0度的角度。 7 ·如申請專利範圍第6項之支撐，其中： 該弟一凸邰係定位在該第一凸部上方；及 第一頂表面及第二底表面間的距離爲0.7 5英吋。 8. —種用來支撐半導體晶圓的晶圓托架，包含： 一底圓柱形支撐； 一頂支撐； 一第一軌支撐，可操作地連接至底圓柱形支撐及頂支 -17- (2) 200411717 H 丄|ri ή^ 牙’ M第〜軌支撐具有大致T形的橫截面； 〜第二軌支撐，可操作地連接至底圓柱形支撐及頂支 緣，琴給〜 ΰχ弟二軌支撐具有大致T形的橫截面；及 ^第Ξ軌支撐，可操作地連接至底圓柱形支撐及頂支 ^弟Ξ軌支撐具有大致τ形的橫截面。 9 ·如申請專利範圍第8項之托架，其中底圓柱形支 梅、了苜
    ρ ^支瑋、第一軌支撐、第二軌支撐及第三軌支撐都是 、石央而製成的。 1 0.如申請專利範圍第9項之托架，其中第一、第二 %二軌支撐結合來平衡放置在其上不超過三點之晶圓。 1 1 ·如申請專利範圍第1〇項之托架，其中： 該三點包含：第一、第二及第三凸部.，每一凸部分別 地繫體形成爲該第一、第二及第三軌支撐的一部份； 該第一、第二及第三軌支撐分別地另包含第一、第二 及_ Η半圓頭部；
    該第一、第二及第三凸部的每一者的頂表面分別地與 該_〜、第二及第三半圓頭部形成一大於90度的角度。 1 2 .如申請專利範圍第1 1項之托架，其中放置在該第 ^、第二及第三凸部上之晶圓可自由地熱膨漲及收縮。 1 3 .如申請專利範圍第1 2項之托架，其中： 一第一角度，由自托架的中心延伸至第一 Τ形軌支撐 之箄一半徑及自托架的中心延伸至第二Τ形軌支撐之第二 半徑而形成的，該第一角爲100度；及 一第二角度，由該第一半徑及自托架的中心延伸至第 - 18- (3) (3)200411717 三T形軌支撐之第三半徑而形成的，該第二角爲100度。 1 4 ·如申請專利範圍第1 2項之托架，其中底圓柱形支 撐放置在一底座板上。 1 5 ·如申請專利範圍第丨〇項之托架，其中由晶圓表面 上的第一、第二及第三Τ形軌支撐所產生之排除帶係小於 3 毫米。 1 6· —種用來支撐數個半導體晶圓於垂直熱處理室之 托架，包含： 至少三個剛性垂直體，沿著各別軸而延長且繞著一中 心軸配置，該垂直體的軸及該中心軸係相互平行，該至少 三個剛性垂直體操作相互連接； 其中該垂直體的每一者包含至少具有上表面的剛性突 出構件，大致配置在距各別垂直體的軸之大於9 0度的角 度；及 其中每一各別突出構件大致朝向該中心軸而延伸自各 別垂直體。 1 7 ·如申請專利範圍第1 6項之托架，其中該突出構件 的每一者包含第一及第二圓弧狀側壁。 1 8 ·如申請專利範圍第1 6項之托架，其中該突出構件 的每一者包含·· 一實質平面的頂表面；及 一至少部份圓弧狀的底表面。 19. 一種用來支撐數個半導體晶圓於垂直熱處理室之 托架，包含： -19- (4) (4)200411717 第一、第二及第三垂直體，沿著各別縱軸而延長且繞 著一中心軸配置； 一底座板，附接至該第一、第二及第三垂直體的每一 者的一端；及 其中該第一、第二及第三垂直體的每一者包含數個具 有上表面的剛性突出構件，其配置來支撐一水平配置的半 導體晶圓在沿著該晶圓的下緣的點。 2 0 .如申請專利範圍第1 9項之托架，其中該數個剛性 突出構件的每一者與該第一、第二及第三縱軸而形成大於 9 〇度的角度。 -20 -
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