CN105940481A - 高速epi系统和腔室构思 - Google Patents

高速epi系统和腔室构思 Download PDF

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CN105940481A
CN105940481A CN201580006157.8A CN201580006157A CN105940481A CN 105940481 A CN105940481 A CN 105940481A CN 201580006157 A CN201580006157 A CN 201580006157A CN 105940481 A CN105940481 A CN 105940481A
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布莱恩·H·伯罗斯
兰斯·A·斯卡德
卡什夫·马克苏德
罗杰·N·安德森
桑姆特·达塔特拉亚·阿查利雅
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Applied Materials Inc
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Abstract

本文描述的实施方式一般涉及一种批处理腔室。批处理腔室包括界定处理区域的盖、腔室壁和底部。在处理区域中安置盒，所述盒包括用于支撑基板的基座堆叠。将盒的边缘耦接到多个轴，并将轴耦接到转子。在操作期间，转子旋转盒以改善沉积均匀性。在腔室壁上安置加热元件，并穿过腔室壁上的加热元件安置多个气体入口。每一气体入口基本上垂直于腔室壁。

Description

高速EPI系统和腔室构思
技术领域
本文描述的实施方式一般涉及一种用于外延沉积的装置。更具体而言，本文描述的实施方式涉及一种旋转批处理腔室。
背景技术
半导体基板被加以处理用于多种应用，包括集成装置和微装置的制造。处理基板的一种方法包括在基板的上表面上沉积材料(例如，电介质材料或导电金属)。例如，外延是一种沉积工艺，它是在基板的表面上生长通常为硅或锗的薄超纯层。可在侧向流动腔室中通过以下步骤来沉积材料：使处理气体平行于支撑件上安置的基板的表面流动，并且热分解处理气体以将来自气体的材料沉积在基板表面上。
为了增加产量和降低成本，需要一种改良的用于外延沉积的装置。
发明内容
本文描述的实施方式一般涉及一种批处理腔室。批处理腔室包括界定处理区域的盖、腔室壁和底部。在处理区域中安置盒，所述盒包括用于支撑基板的基座堆叠。将盒的边缘耦接到多个轴，并将轴耦接到转子。在操作期间，转子旋转盒以改善沉积均匀性。在腔室壁上安置加热元件，并穿过腔室壁上的加热元件安置多个气体入口。每一气体入口基本上垂直于腔室壁。
在一个实施方式中，公开一种旋转批处理腔室。旋转批处理腔室包括腔室壁、底部和盖。腔室壁、底部和盖界定处理区域。腔室进一步包括：盒，所述盒经配置以固持处理区域中安置的多个基板；多个轴，所述多个轴被耦接到盒的边缘；转子，所述转子被耦合到多个轴；定子，所述定子被耦接到转子；和第一加热构件，所述第一加热构件邻近于腔室壁安置。
在另一个实施方式中，公开一种旋转批处理腔室。旋转批处理腔室包括腔室壁、底部和盖。腔室壁、底部和盖界定处理区域。腔室进一步包括：盒，所述盒经配置以固持处理区域中安置的多个基板；多个轴，所述多个轴被耦接到盒的边缘；转子，所述转子被耦合到多个轴；定子，所述定子被耦接到转子；第一加热构件，所述第一加热构件邻近于腔室壁安置；和多个气体入口，所述多个气体入口穿过腔室壁上的第一加热构件安置。多个气体入口中的每一个基本上垂直于腔室壁。
在另一个实施方式中，公开一种旋转批处理腔室。旋转批处理腔室包括腔室壁、底部和盖。腔室壁、底部和盖界定处理区域。腔室进一步包括：盒，所述盒经配置以固持处理区域中安置的多个基板；第一加热构件，所述第一加热构件邻近于腔室壁安置；和多个气体入口，所述多个气体入口穿过腔室壁上的第一加热构件安置。多个气体入口中的每一个垂直于腔室壁。腔室进一步包括盒与腔室壁之间安置的腔室衬里和腔室衬里与腔室壁之间安置的多个气体管线，其中多个气体管线中的每一个基本上平行于腔室壁。
附图说明
因此，以上简要总结的本发明的上述特征可被详细的理解的方式的方式、对本发明更特定描述可以通过参考实施方式获得，所述实施方式中的一些示出于附图之中。然而，值得注意的是，所述附图仅示出了本发明的典型实施方式，而由于本发明可允许其它等效的实施方式，所述附图因此并不会被视为对本发明的范围的限制。
图1(附图中的图1)是根据一个实施方式的处理腔室的截面透视图。
图2A至图2B(附图中的图2A、图2B)是根据一个实施方式的处理腔室的截面侧视图。
图3(附图中的图3)是根据一个实施方式的腔室的透视图。
图4(附图中的图4)是根据一个实施方式的气体入口的截面透视图。
图5(附图中的图5)是根据一个实施方式的多个处理腔室的截面透视图。
为了促进理解，已在尽可能的情况下使用相同的参考数字指代这些附图共有的相同元件。可以考虑到的是，在一个实施方式中所公开的元件可有益地用于其它实施方式，而无需赘述。
具体实施方式
通常，硅CVD沉积工艺可在质量传递机制内进行，其中提供给基板的处理气体跨越边界层扩散，吸附在基板的表面上，在基板的表面上迁移和解离，从基板的表面成核和生长，通过解吸离开基板的表面，以及跨越边界层扩散回来。为了增加产量和降低成本，可在旋转批处理腔室内放置多个模板基板，使得在处理腔室内部的每一基板的上表面和下表面上沉积硅层。
图1是根据一个实施方式的处理腔室100的截面透视图。处理腔室100具有腔室壁102、盖104和底部106。腔室壁102可以是圆柱形的，并且可由透明石英制成。腔室壁102、盖104和底部106可界定处理区域108，并且可在处理区域108内安置盒110。盒110可包括基座112的堆叠，或呈堆叠状配置的多个基座112，并且每一基座112可固持一个或多个基板114。基座112可经配置以固持基板114以用于单侧沉积或者双侧沉积。可在沉积工艺期间连续旋转盒110以实现改善的沉积均匀性。
盖104上方是顶盖120，并且可由顶盖120界定装载区域122。可在顶盖120中形成开口124，并在顶盖120上安置升降机构126以便升降盒110。在基板114的装载/卸载期间，将盒110升降到装载区域122，并且经由开口124装载/卸载基板114。基板114的装载/卸载并不受限于升降盒110。可通过将盒110下降到由底部106下方安置的底盖(未示出)界定的装载区域中来执行基板114的装载/卸载。
图2A是处理腔室100的截面侧视图。可邻近于腔室壁102安置加热元件204以便向处理区域108提供热能。加热元件204可以是任何适宜的加热元件。在一个实施方式中，加热元件204包括围绕盒110的多个红外线(“IR”)灯。在一个实施方式中，IR灯围绕腔室壁102。灯的排列可取决于工艺而变化。在腔室壁102是圆柱形的实施方式中，IR灯是圆形的。可将IR灯堆叠以提供轴向多区加热，如图2A所示。在另一个实施方式中，每一灯是平行于腔室壁102(垂直于基座112)安置的线性灯，并且围绕腔室壁102的圆周排列多个线性灯。另外或替代地，加热元件204可包括一个或多个感应加热器。感应加热器可以是围绕盒110(例如，围绕腔室壁102)卷绕的铁氧体磁芯。可围绕铁氧体磁芯缠绕一个或多个电线，并且可将每一电线连接到电源以形成电路。
反射镜208可围绕加热元件204(例如，多个IR灯)以更有效地控制加热处理区域108。在一个实施方式中，反射镜208包括多个弯曲圆环，并且每一环环绕每一IR灯的外圆周。因此，将从IR灯产生的热量导向处理区域108。反射镜208内可安置有冷却通道236。每一冷却通道236可具有入口238和出口240，并且可利用冷却剂(例如，水)从入口238流动穿过冷却通道236并从出口240流出来冷却反射镜208。在盒110与腔室壁102之间安置腔室衬里202。腔室衬里202可具有与腔室壁102相似的形状(例如，圆柱形)，并可提供热均匀性和产生处理区域108内的等温区206。腔室衬里202可由碳化硅涂覆的石墨制成。
除加热元件204之外，可在盒110上方和/或下方安置加热元件210以提供径向多区加热。加热元件210可以是任何适宜的加热元件。在一个实施方式中，加热元件210是电阻加热元件，由实心碳化硅或碳化硅涂覆的石墨制成。可在加热元件210与盖104/底部106之间安置绝热体212。
可穿过腔室壁102上的加热元件204安置多个气体入口220。在一个实施方式中，气体入口220基本上垂直于腔室壁102。在加热元件204是多个IR灯的实施方式中，使气体入口220和IR灯交错，如图2A所示。换句话说，在两个相邻IR灯之间安置每一气体入口220。可在腔室衬里202与腔室壁102之间安置多个净化气体管线224。净化气体管线224可基本上平行于腔室壁102。
可将盒110的边缘耦接到多个轴230，将多个轴230耦接到转子232。可将转子232耦接到定子234。在一个实施方式中，转子232和定子234都是永磁体，并且将转子232磁性耦接到定子234。在操作期间，盒110漂浮起来，并连续旋转。在另一个实施方式中，转子232和定子234是线性弧电动机的一部分，并且线性弧电动机在操作期间连续旋转盒110。
图2B是根据一个实施方式的气体入口220的放大截面侧视图。如图2B所示，将处理气体从每一气体入口220，穿过腔室壁102中形成的开口250和腔室衬里202中形成的开口254，引入到两个处理体积256中。每一处理体积256可处于两个基板114之间。在双侧沉积工艺期间，在每一处理体积256中处理两个基板表面(即第一基板的下表面和第一基板下方安置的第二基板的上表面)。因此，每一气体入口220控制处理气流以便处理四个表面(如果在相同基座上安置多个基板，则处理更多个表面)。腔室壁102中的开口250和腔室壁102中的内表面可衬有插入件252。插入件252可由石英制成。
图3是根据一个实施方式的处理腔室100的透视图。如图3所示，每一基座112支撑四个基板114。可在反射镜208与腔室壁102之间安置多个冷却管302。冷却管302为加热元件204提供冷却，并且在加热元件204是多个IR灯的实施方式中，冷却管302可与IR灯轴向交错。换句话说，可在每对相邻IR灯之间安置每一冷却管302。每一冷却管302具有入口304和出口306。冷却空气可从入口304流动到出口306以冷却加热元件204。
图4是根据一个实施方式的气体入口220的截面透视图。可在相同水平上安置多个气体入口220以跨越基座112上安置的基板114提供更均匀的气流。在图4所示的实施方式中，每一水平上存在三个气体入口220。可在气体入口220之间安置净化气体管线224。再次，气体入口220基本上垂直于腔室壁102，并且净化气体管线224基本上平行于腔室壁102。
图5是根据一个实施方式的多个处理腔室100的截面透视图。每一处理腔室100具有安置在处理区域108下方的装载区域122。将主气体入口管线502连接到气体入口220的每一列。可将处理气体从顶部或底部引入到主气体入口管线502，然后流入到每一气体入口220。
虽然上文是针对本发明的实施方式，但是可在不背离本发明的基本范围的情况下设计出本发明的其它和进一步的实施方式，并且本发明的范围由权利要求书所决定。

Claims (15)

1.一种旋转批处理腔室，所述旋转批处理腔室包含：
腔室壁；
底部；
盖，其中所述腔室壁、所述底部和所述盖界定处理区域；
盒，所述盒经配置以固持所述处理区域中安置的多个基板；
多个轴，所述多个轴被耦接到所述盒的边缘；
转子，所述转子被耦接到所述多个轴；
定子，所述定子被耦接到所述转子；和
第一加热构件，所述第一加热构件邻近于所述腔室壁安置。
2.如权利要求1所述的旋转批处理腔室，其中所述第一加热构件包括多个红外线灯。
3.如权利要求2所述的旋转批处理腔室，其中所述腔室壁是圆柱形的，所述多个红外线灯是圆形的，并且所述多个红外线灯围绕所述腔室壁。
4.如权利要求1所述的旋转批处理腔室，进一步包含第二加热元件，所述第二加热元件安置在所述盒的上方和/或下方。
5.如权利要求1所述的旋转批处理腔室，进一步包含围绕所述第一加热元件的反射镜。
6.一种旋转批处理腔室，所述旋转批处理腔室包含：
腔室壁；
底部；
盖，其中所述腔室壁、所述底部和所述盖界定处理区域；
盒，所述盒经配置以固持所述处理区域中安置的多个基板；
多个轴，所述多个轴被耦接到所述盒的边缘；
转子，所述转子被耦接到所述多个轴；
定子，所述定子被耦接到所述转子；
第一加热构件，所述第一加热构件邻近于所述腔室壁安置；和
多个气体入口，所述多个气体入口穿过所述腔室壁上的所述第一加热构件安置，其中所述多个气体入口中的每一个基本上垂直于所述腔室壁。
7.如权利要求6所述的旋转批处理腔室，其中所述第一加热构件包括多个红外线灯。
8.如权利要求7所述的旋转批处理腔室，其中所述腔室壁是圆柱形的，所述多个红外线灯是圆形的，并且所述多个红外线灯围绕所述腔室壁。
9.如权利要求6所述的旋转批处理腔室，其中所述第一加热构件包括一个或多个感应加热器。
10.如权利要求6所述的旋转批处理腔室，进一步包含第二加热元件，所述第二加热元件安置在所述盒的上方和/或下方。
11.如权利要求6所述的旋转批处理腔室，其中所述转子和所述定子是永磁体，并且将所述转子磁性耦接到所述定子。
12.如权利要求6所述的旋转批处理腔室，进一步包含耦接到所述多个轴的线性弧电动机，其中所述线性弧电动机包括所述转子和所述定子。
13.一种旋转批处理腔室，所述旋转批处理腔室包含：
腔室壁；
底部；
盖，其中所述腔室壁、所述底部和所述盖界定处理区域；
盒，所述盒经配置以固持所述处理区域中安置的多个基板；
第一加热构件，所述第一加热构件邻近于所述腔室壁安置；
多个气体入口，所述多个气体入口穿过所述腔室壁上的所述第一加热构件安置，其中所述多个气体入口中的每一个垂直于所述腔室壁；
腔室衬里，所述腔室衬里安置在所述盒与所述腔室壁之间；和
多个气体管线，所述多个气体管线安置在所述腔室衬里与所述腔室壁之间，其中所述多个气体管线中的每一个基本上平行于所述腔室壁。
14.如权利要求13所述的旋转批处理腔室，其中所述第一加热构件包括多个红外线灯。
15.如权利要求13所述的旋转批处理腔室，进一步包含第二加热元件，所述第二加热元件安置在所述盒的上方和/或下方。
CN201580006157.8A 2014-01-27 2015-01-06 高速epi系统和腔室构思 Pending CN105940481A (zh)

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