JP2023533400A - エピタキシャル成長装置 - Google Patents
エピタキシャル成長装置 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 claims abstract description 119
- 230000006698 induction Effects 0.000 claims abstract description 87
- 238000006243 chemical reaction Methods 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000012429 reaction media Substances 0.000 claims description 25
- 239000007789 gas Substances 0.000 description 22
- 238000005339 levitation Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本願は、2021年6月1日に出願した、出願番号が202110606879.4であり、発明の名称が「エピタキシャル成長装置」である中国特許出願の優先権を主張し、その全ての内容が参照により本願に援用される。
200 反応本体
300 誘導コイル
1 加熱ベース
11 第一サブ加熱ベース
12 第二サブ加熱ベース
13 第三サブ加熱ベース
14 取り付けスロット
15 位置決めポスト
16 空気浮上チャネル
2 トレイ
3 担体
31 第一断熱ブランケット
32 第二断熱ブランケット
33 エンドキャップ
34 第一ステップ
35 第二ステップ
4 作業スペース
5 入口
6 出口
7 ガス供給ポート
8 支持部材
9 基板
Claims (10)
- エピタキシャル成長装置は、誘導コイル及び反応本体を含み、
前記誘導コイルは、前記反応本体の外側を取り囲んで配置され、
前記反応本体は、加熱ベース及び複数のトレイを含み、前記加熱ベースが複数の作業スペースを有し、複数の前記トレイが複数の前記作業スペースに配置され、且つ各々の前記トレイがそれぞれ一つの前記作業スペースに対応し、
複数の前記トレイは、基板を載せることに用いられ、各々の前記トレイは、前記加熱ベースに対して独立して回転することができることを特徴とするエピタキシャル成長装置。 - 複数の前記作業スペースは、第一方向に沿って積み重ねられて配置され、前記第一方向は、前記誘導コイルの軸方向に垂直することを特徴とする、請求項1に記載のエピタキシャル成長装置。
- 前記加熱ベースは、複数のサブ加熱ベースを含み、隣接する二つの前記サブ加熱ベースが取り囲んで前記の複数の作業スペースを形成し、前記トレイが前記サブ加熱ベースに配置されることを特徴とする、請求項1又は2に記載のエピタキシャル成長装置。
- 前記トレイが前記誘導コイルの軸方向に垂直な方向に沿う中心線を、第一中心線として、前記トレイの第一中心線が該トレイの対応する前記サブ加熱ベースの中心との最短距離は、0~20mmであることを特徴とする、請求項3に記載のエピタキシャル成長装置。
- 各々の前記作業スペースは、対向して設置される入口及び出口が形成され、前記入口は、反応媒体を前記作業スペースに入力するために使用され、前記出口は、前記作業スペースから反応媒体を出力するために使用されることを特徴とする、請求項1に記載のエピタキシャル成長装置。
- 前記反応媒体が前記入口から前記出口に流れる方向は第二方向であり、隣接する二つの前記トレイは、第二方向に沿ってずらされることを特徴とする、請求項5に記載のエピタキシャル成長装置。
- 前記反応媒体は、前記誘導コイルの軸方向に沿って流れ、前記第二方向は、前記誘導コイルの軸方向であり、前記誘導コイルの軸線に平行な線は軌道線であり、隣接する二つの前記トレイの第一中心線は、同一の前記軌道線と交差することを特徴とする、請求項6に記載のエピタキシャル成長装置。
- 前記反応本体が前記誘導コイルの軸方向に沿う中心線を第二中心線として定義し、前記誘導コイルの軸線と前記第二中心線との間の距離は、0mm~4mmであることを特徴とする、請求項1又は2に記載のエピタキシャル成長装置。
- 前記誘導コイルの軸方向に沿って、前記誘導コイルの中心と前記反応本体の中心との間の距離は、0mm~50mmであることを特徴とする、請求項1にエピタキシャル成長装置。
- 前記反応本体は、担体をさらに含み、前記加熱ベースは、前記担体に取り付けられることを特徴とする、請求項1にエピタキシャル成長装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110606879.4 | 2021-06-01 | ||
CN202110606879.4A CN114250451B (zh) | 2021-06-01 | 2021-06-01 | 外延生长装置 |
PCT/CN2022/077689 WO2022252709A1 (zh) | 2021-06-01 | 2022-02-24 | 外延生长装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023533400A true JP2023533400A (ja) | 2023-08-03 |
JP7417721B2 JP7417721B2 (ja) | 2024-01-18 |
Family
ID=84194249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022524605A Active JP7417721B2 (ja) | 2021-06-01 | 2022-02-24 | エピタキシャル成長装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220384192A1 (ja) |
JP (1) | JP7417721B2 (ja) |
KR (1) | KR20220163927A (ja) |
DE (1) | DE112022000051T5 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117672949B (zh) * | 2024-02-01 | 2024-04-05 | 盛吉盛半导体科技(北京)有限公司 | 一种用于反应腔体的气浮旋转机构 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004055896A (ja) * | 2002-07-22 | 2004-02-19 | Kobe Steel Ltd | 加熱装置 |
JP2014022500A (ja) * | 2012-07-17 | 2014-02-03 | Sharp Corp | 気相成長装置および半導体装置の製造方法 |
CN210341057U (zh) * | 2019-05-06 | 2020-04-17 | 杭州弘晟智能科技有限公司 | 一种用于外延生长的反应装置 |
-
2022
- 2022-02-24 DE DE112022000051.1T patent/DE112022000051T5/de active Pending
- 2022-02-24 KR KR1020227019043A patent/KR20220163927A/ko not_active Application Discontinuation
- 2022-02-24 JP JP2022524605A patent/JP7417721B2/ja active Active
- 2022-06-10 US US17/837,044 patent/US20220384192A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004055896A (ja) * | 2002-07-22 | 2004-02-19 | Kobe Steel Ltd | 加熱装置 |
JP2014022500A (ja) * | 2012-07-17 | 2014-02-03 | Sharp Corp | 気相成長装置および半導体装置の製造方法 |
CN210341057U (zh) * | 2019-05-06 | 2020-04-17 | 杭州弘晟智能科技有限公司 | 一种用于外延生长的反应装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7417721B2 (ja) | 2024-01-18 |
KR20220163927A (ko) | 2022-12-12 |
DE112022000051T5 (de) | 2023-06-01 |
US20220384192A1 (en) | 2022-12-01 |
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