TW200405401A - Thermal processing apparatus and method for evacuating a process chamber - Google Patents

Thermal processing apparatus and method for evacuating a process chamber Download PDF

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TW200405401A
TW200405401A TW92119300A TW92119300A TW200405401A TW 200405401 A TW200405401 A TW 200405401A TW 92119300 A TW92119300 A TW 92119300A TW 92119300 A TW92119300 A TW 92119300A TW 200405401 A TW200405401 A TW 200405401A
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chamber
valve
mass flow
flow rate
gas
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TW92119300A
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Tai-Quing Thomas Qiu
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Asml Us Inc
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67005Apparatus not specifically provided for elsewhere
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    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Description

200405401 (1) 玖、發明說明 本案主張西元2002年7月15日提出申請而名稱爲“ Thermal Processing System”之美國專利臨時申請案第 60/396,536號,以及西元2002年11月22日提出申請而 名稱爲 “ Thermal Processing System and Method for Using the Same”之美國專利臨時申請案第60/428,5 26號 的優先權,此二案皆係讓渡予本案申請人,同時係引述於 此,以供參考。 【發明所屬之技術領域】 本發明係有關於半導體之設備及製程的領域。更詳細 地說,本發明係有關於具有真空系統的熱處理裝置與將處 理室加以排氣減壓的方法。 【先前技術】 熱處理裝置係半導體及積體電路之製造上常使用的。 半導體晶圓的熱處理包括有例如沉積、蝕刻、熱處理、退 火、擴散等。某些製程,例如蝕刻及化學蒸鍍(CVD )等 製程係在低壓或真空狀況下進行的。 在低壓或真空狀況下進行的製程中,處理室係自初始 壓力排氣減壓至作業壓力。例如說,處理室初係爲大氣壓 力,以供裝塡晶圓,而後排氣減壓至微托(Milli-Torr) 範圍內的作業壓力。此一製程中的初始排氣循環有時亦稱 爲“泵排循環(Pump Down Cycle ) ” 。一般而言,泵排 (2) (2)200405401 循環是由一個與處理室相連通的真空泵浦來進行的。 其希望泵排循環能夠儘快地完成,以在製程中得到最 小的整體循環時間。但是,如果腔室的氣體泵排速度太快 ,則會產生擾流運動。此種擾流運動會將沉積在腔室壁部 、晶圓載器或熱處理裝置內其它零組件上的顆粒加以剝離 ,並將其等運送或重新分送至可能會相當嚴重的區域內, 例如在要形成積體電路的基體上。習用用來將處理室加以 排氣減壓的真空系統與方法會受到泵排過程中之顆粒狀污 染物的不利物理現象的限制。 【發明內容】 本發明提供一種具有真空系統的熱處理裝置,以及一 種可在不造成顆粒性污染的情形下將熱處理裝置加以快速 地泵排的方法。 本發明的熱處理裝置包含有一處理室,以及一個用以 將該處理室加以排氣減壓的真空系統。此真空系統包含有 一個與該腔室在流通上相通的泵浦單元,以及一位在該泵 浦單元與該腔室之間之閥總成,用以控制自該腔室至該泵 浦單元的質量流動。此閥總成包含有一個主真空閥,以及 一個或多個旁通閥。該一個或多個旁通閥係經由旁通管線 連接至真空管線上,並係與該主真空閥呈在流通上呈並聯 的關係。 本發明之對處理室加以排氣減壓的方法包含有決定臨 限的最大質量流率,以及在該腔室的排氣減壓過程中大致 -5- (3) (3)200405401 上維持該最大氣體流率。此臨限最大質量流率可以藉由實 驗方式,使用小於約2000的雷諾數以確保層流狀態,而 決定之。另一種方式,可以針對某一事先確認而在意顆粒 型式,根據剪力大致上等於重力的情形來決定該臨限最大 質量流率。決定臨限最大質量流率的步驟可以藉由下式之 計算而得完成z 500μΑ mmax h 其中mmax代表臨限最大質量流率,μ代表氣體黏度 ,Α代表形成在晶圓堆疊與該室壁部之間的環狀流動區域 的截面積,而h代表晶圓堆疊與該室之壁部間的距離。 【實施方式】 本發明係有關於用以成批處理半導體基體或晶圓的熱 處理裝置及方法,其可顯著地減少處理循環時間,以及改 善處理的均勻度。 參閱第1圖,現在將說明本發明的熱處理裝置。爲淸 楚說明起見,某些與本發明不相關的元件將會被略去,以 避免使整個說明變得太複雜。整體而言,此熱處理系統 100包含有一個處理室102和一個與該處理室102相連通 的真空系統1 04,用以將該腔室加以排氣減壓至低壓力或 真空狀態。 此處理室1 02可以製做成任何適合處理大批或小批晶 圓的尺寸。處理室102可以是諸如化學蒸鍍(CVD )用或 -6 - (4) (4)200405401 是蝕刻用的熱處理腔室。處理室1 〇2最好是由可以承受高 溫及真空下的熱及機械應力’且可抵抗在處理過程中所使 用或排放出之氣體或蒸汽所致之腐蝕作用的材料所製成的 。最好該處理室1 02係由石英或碳化矽所製成。 處理室102最好是直立式的反應腔室。在腔室102的 下半部上設有入口,以供將用以輸送一批晶圓1 〇 8的載器 或載具106經由可移動托架110加以送入或退出處理室 102。處理室1 02的上半部是封閉的,以形成一個反應區 域。 此直立式反應腔室102最好具有內管或內襯112,以 及外管1 1 4。內管或內襯1 1 2的下方末端係開放的,而其 上方末端則是至少部份開放的。內管1 1 2可導引氣流,並 防止內襯外部的雜質擴散至晶圓1 〇8上。用以載送晶圓 108的載具106係被包圍在內管112內。外管114的上方 末端係封閉的,但是下方末端則是開放的。在內和外管 1 1 2和1 1 4之間形成一道環狀通道1 1 6,用以將氣體以向 下的方向加以排放。內和外管1 1 2和11 4係由諸如〇形環 之類的密封件加以密封地連接至氣室1 1 8上。 氣室Π 8係由一種具有耐熱性和防蝕性之材料所製成 的,例如不鏽鋼或石英。氣室1 1 8的形狀係爲短圓柱狀而 包含有頂突緣、底突緣及側壁。頂突緣係可用來收納及支 撐腔室102的內管或內襯112。在氣室118內設有噴射總 成120,用以注入處理用或沖排用氣體至腔室102內。噴 射總成1 2 0係設置成可將處理用或沖排用氣體噴入至由腔 (5) (5)200405401 室102之內管112所包圍起來的反應區域內。 在氣室1 1 8的側壁上設有排氣埠1 22,用以將處理室 102及氣室1 1 8連接·至真空系統1〇4。排氣埠122係設置 成可與形成在內和外管1 1 2和1 1 4之間的環狀通道1 1 6相 連通。 真空系統1 04包含有泵浦單元1 24和閥總成1 2 6。泵 浦單元124係經由真空管線128連接至排氣埠122,並與 處理室102形成流通上的連通。閥總成126係設置在真空 管線128上而位在泵浦單元124與熱處理裝置102之間。 閥總成126可控制自處理室102至泵浦單元124的氣體流 ,並可將處理室102與泵浦單元124完全地隔離開。 此泵浦單元1 24可以包含有乾燥泵浦、增壓泵浦、魯 氏泵浦,或是這些泵浦中的二種或多種的組合。例如說, 泵浦單元1 24可以是一乾燥泵浦系統,例如美國麻州波士 頓市的 BOC Edwards公司的型號iQDP80/iQMB 1 200F者 。此種乾燥泵浦系統的峰値泵浦速度是15.6m3/min,約 1 〇托左右,極限真空値爲5毫托。 閥總成1 2 6包含有一個主真空閥1 3 0,設置在真空管 線1 2 8上。主真空閥1 3 0可以是可將處理室1 02與泵浦單 元1 24完全隔離開的任何型式者。最好,此主閥1 3 0是習 用技藝中的閘閥。此閘閥可以是任何能在全開與全閉位置 之間作動的開/閉式者。最好此閘閥是一種由直流馬達所 帶動而能在全開與全閉位置之間的任何位置處加以調整者 -8 - (6) (6)200405401 在某一實施例中,閥總成126包含有旁通閥132。此 旁通閥1 3 2是由旁通管線1 3 3加以設置於真空管線1 2 8上 ,並在流通上係與主真空閥130爲並聯設置者。在另一種 實施例中,閥總成1 26可以進一步包含有第二旁通閥(未 顯示),由旁通管線(未顯示)加以設置至真空管線1 2 8 上,並在流通上係與主真空閥1 3 0爲並聯設置。此種主真 空閥與一個或多個旁通閥的組合可以在大致上固定的質量 流率下得到處理室的快速泵排結果,如下文所述。 最好,旁通閥1 3 2是一種具有給定孔口面積的孔口閥 。例如,閥總成1 2 6可以包含有第一和第二孔口閥,其每 一者均具有一孔口面積。最好,第二孔口閥所具有的孔口 面積是大於第一孔口閥。就此例而言,第一孔口閥所具有 的孔口係具有範圍爲約1至3公釐的直徑。第二孔口閥可 以具有直徑在約2至4公釐的孔口。藉由使用具有不同孔 口面積的孔口閥,其將可以得到所需的泵排過程,如下文 所述。 另一種方式是使用質量流控制器(未顯不),以保持 自腔室102至泵浦單元124的固定質量流率,並可將腔室 102與栗浦單元124完全地隔離開。 真空系統1 〇 4可以進一步包含有節流閥或蝴蝶閥1 3 4 ,位在閥總成126與栗浦單元124之間。此節流閥或蝴蝶 閥134具有一碟片136,其可由一個控制旋動驅動器(未 顯示)來加以改變其角度。節流閥1 3 4係用來在處理用化 學品的給定流率下’將腔室壓力穩定在某一給定値上。節 -9 - (7) 200405401 流閥134亦可改變閥總成126的真空導率 Conductance),因之而改變腔室壓力。這可藉 驅動之碟片ί 36的角度而達成之。當碟片136與 平行時,節流閥134可在穩態(Steady State ) 大的真空導率,因之而提供最低的腔室壓力。當 垂直於流動方向,其會造成最低的導率,而得到 最高腔室壓力。 熱處理裝置1〇〇可進一步包含有一個或多個 元件(未顯示),設置在內和外管1 1 2和1 1 4之 監測處理室內的溫度。熱處理裝置1〇〇亦可 個或多個壓力感測器或轉換器(未顯示)’用以 室1 0 2內的壓力。 在操作上,第一旁通閥132係先自主真空閥 二旁通閥(未顯示)均關閉的初始狀態中開啓’ 一階段的栗排作業。接著在主真空閥1 3 〇仍關閉 排階段中,關閉第一旁通閥1 3 2 ’並同時開放第 。在接下來的第三泵排階段中’第一和第二旁通 ,而主真空閥〗3 0則仍維持關閉。最後,將第一 通閥均加以關閉,但開放主真空閥1 3 0 ’以進行 階段。在最終的泵排階段中,節流閥1 34係調整 處理室102內的壓力。 下面將配合第2圖至第5圖來說明一種可在 粒性污染的情形下’將處理室加以排氣減壓或栗 方法。 (Vacuum 由調整被 流動方向 下提供最 碟片136 穩態下的 溫度感測 間,以供 包含有一 測量處理 1 3 0和第 以進行第 的第二泵 二旁通閥 閥均開放 和第二旁 強度泵排 成能穩定 不造成顆 排處理的 -10- (8) 200405401 諸如化學蒸鍍法等的每一種半導體製程,均 量的顆粒。許多次後,顆粒會累積在腔室壁部, 所示。當腔室內無氣流存在時,f顆粒與腔室間的 將顆粒固定在壁部上,而防止它們移動至半導體 泵排過程會造成沿著腔室壁部流動的氣流。 在形成於壁部上的顆粒上產生剪力。如果此剪力 臨限値時,顆粒將會自腔室壁部移離開。一旦鬆 些顆粒會隨著氣體流動,並可能沉積在半導體晶 成顆粒性污染。 如上所述,其希望能將泵排過程儘可能快速 以在製程中得到最小的整體循環時間。但是,腔 氣體的速度必須要加以控制,以避免顆粒性污染 明人曾硏發出泵排程序中的流動模式(Flow 並發現如果依循這些模式的話,則泵排循環時間 地減少,且在泵排過程中,不受歡迎地沉積在腔 晶圓或是載具上的顆粒將不會受到擾動,因此不 性污染。 槪略而言,本發明之處理室的排氣減壓方法 定出會使形成在腔室內之顆粒污染物之移動減至 限最大氣體流率,並在該腔室的排氣減壓過程中 維持該最大的氣體流率。 施加至腔室壁部上之顆粒上的剪力是依腔室 的氣流型式而定的。擾流是指在流速及流動壓力 任意變動的氣流。層流則是指流速及流動壓力二 會產生少 如第2圖 附著力可 晶圓上。 此氣流會 大於某一 脫後,這 圓上,造 地完成, 室內泵排 。本案發 □dels), 可以顯著 室壁部與 會有顆粒 包含有決 最小的臨 ,大致上 壁部鄰旁 二者均會 者均是穩 -11 - .(9) .(9)200405401 定的氣流。第2圖示意地顯示出在靠近腔室壁部處的層流 及擾流的速度分佈輪廓。在擾流中,其平均流速在遠離該 壁部時會快速地增加。在層流中,其流速在遠離該壁部時 僅會緩慢地增加。在一顆粒的中心位置處,擾流的速度( U T )是遠大於層流的速度(U L )。因此,擾流會在顆粒 上造成遠大於層流所能造成的剪力,所以在栗排過程中必 須要加以避免。 雷諾數(Re )可表示晶圓堆疊與腔室壁部之間的氣流 是擾流或是層流。依據一般的氣體法則,雷諾數可以下式 表示,並配合第3圖:
Re - 4PUh
Re-丁 ⑴ 其中P是氣體密度’U是平均流速,h是晶圓堆疊與 腔室壁部間的距離’而μ是氣體黏度。爲確保能得到層流 ’在整個泵排過程中’雷諾數必須要依實做決定而保持低 於 2000 。
Re = 4pUh <2〇〇〇 在泵排過程中,氣體密度(ρ)會隨著腔室壓力下降 而減低。另一方面,氣體黏度(μ)則與腔室壓力無關。 因此,當腔室壓力減低時,最大可容許的氣流速度(U ) 則會增加。 -12- (10)200405401 根據氣體法則,雷諾數亦可以質量流率表示如下:
Re = l2^<2_ (3 μΑ , 其中ηι是質量流率,Α是形成在晶圓堆疊與腔室壁部 之間的環狀流通面積,而h和μ則是定義如上。式子(3 )顯示出,在泵排過程中要將雷諾數保持在低於2000的 話’則質量流率必須要保持低於某一固定値。 由於氣體黏度會隨著溫度而增加,例如在3 00 °C時爲 2.7xl(T5Ns/m2,而在 700°C 時貝ij 爲 3.9xlO_5Ns/m2,故在 較高的溫度時可以使用較高的質量流率,而可避免擾流。 如上所述’氣流在顆粒上所造成的最大剪力必須要小 於臨限値,以避免顆粒移離腔室壁部。顆粒中心位置處的 流速(UL )可以下式來表示之: = 1.5Ud 一—h (4)
其中d是顆粒的直徑,而U和h則是定義如上。 氣流在顆粒上所造成的剪力是依顆粒與流動之氣體內 分子平均自由路徑(λ )間的相對尺寸而定的。分子平均 自由路徑(λ )是指分子在二次連續的碰撞之間所移動的 距離,可以下式表示之: (5) λ = ^Ρ -13- (11) 200405401 其中k是波茲曼常數,k=1.38xl(T23J/k,T是腔室溫 度的克氏溫度値,σ是分子碰撞的截面積〃 a = 4.3xl(T19m2 ,而P是腔室壓力。 . 當顆粒直徑是遠大於平均自由路徑時,例如說(1>4.5λ 孤 ,則氣體分子的行爲就如同連體(Continuum Medium )。 在此種連體流區域內,施加至顆粒上的剪力是以下式表示 >
Fe=3_UL=f^H (6) 其中d、p、U、UL均定義如上。 當顆粒的直徑和平均自由路徑相當或小時,例J _ d>4 · 5 λ,則氣體分子的行爲就如同個別分子碰撞該顆f立。 在此分子流區域內,施加在顆粒上的剪力是以下式;^ @
F Μ (7) 其中a是氣體分子任意運動的平均速度,其 表示之:
a = V2.55RT (8) -14- (12) 200405401 其中R是氣體常數。例如說,氮的氣體常 297J/kg-K 。 第4圖是曲線圖,顯示出在65 0°C溫度下, 顆粒在不同壓力下的流動區域。如第4圖所示’ 程中,相對較大的顆粒會經歷不同型式的氣流。 在初始泵排的760托下’腔室內的氣體係較密’ 平均自由路徑是較小的。環繞著壁部上之二微为 的氣流將會是連體。隨著泵排過程的進行,腔室 低。當腔室壓力下降至約3 60托時’分子平均自 變成與顆粒直徑相當。環繞著此二微米直徑之顆 會變成爲自由分子流。 次微米級的小顆粒是目前及未來半導體製達 主要關心的。這些小顆粒在整個泵排過程均會経 的分子流。式子7即定義出由此自由分子流在顆 成的剪力,其可進一步以氣體密度和質量流率赛
Fm 式子(9 )顯示出顆粒上的剪力是正比於顆 d3 )和質量流率(m )。因此,剪力對重力的 可以下式表示之: N,Fm__3.42mVRT Fg Ahppg 數(R)是 不同尺寸 在泵排過 例如說, 而分子的 ;:直徑顆粒 [壓力會降 丨由路徑會 i粒的氣流 ί技術中所 $歷環繞之 ί粒上所造 〖示如下式 (9) 粒體積( 匕値(Ν ) (9) -15- (13) 200405401 其中Pp是顆粒的質量流率,g是重力加速度’而R 和T則是定義如上。 爲防止顆粒被氣流自腔室壁部上移離開’剪力必須要 和重力相當或較小,如下式所示: N=F^=342mV^<l (10)
Fg Ahppg
合倂式子(3 )和(1 0 ),其可由下式來決定臨限最 大質量流率: mmax = min [500μΑ
Ahppg I 3.42a/RTJ (11) 對於h=1.5公分、T = 700°C而Pp = 5000kg/m3的熱處理 裝置而言,由式子(3)可以推知泵排過程中的最大流率 爲 · (12) 500μΑ 一 h 根據一般的氣體法則,腔室內的壓力與腔室內氣體的 質量有下式的關係: PV = MRT (13) 其中P是腔室壓力,V爲腔室容積,Μ爲腔室內之氣 體的總質量,而Τ是腔室溫度。當氣體分子自腔室內移走 -16 - (14) (14) 200405401
時’腔室壓力會下降’如下式所表示: dP RT dM 合倂式子(1 2 )和(丨4 ),不會造成顆粒污染的最大 泵排速率可以下式表示: dM dt max
500μΑ —h (15)
因此,最快可能的壓力路徑可以下式表示: Ώ Ώ ΙΙΤ500μΑ + P = Pa~ h ' (16) 其中t是泵排時間,而pa是環境壓力(1.013 xio5Pa ),而R、T、μ、A和h則定義如上。 在某一實施例中,此快速泵排處理室的方法包含有藉 由依據式子(1 2 )進行計算而決定臨限最大質量流率,並 藉由將氣體流通經過質量流控制器而加以排氣。此質量流 控制器係大致上設定在該臨限最大質量流上,以使得在排 氣減壓過程中自腔室內抽出之氣體的質量流,在整個排氣 減壓的過程中均是大致上等於臨限最大質量流。 在另一種實施例中,此排氣減壓過程是藉由將氣體自 腔室經由具有可調有效孔口尺寸之閥總成的真空系統加以 導出而進行的。氣體流之控制,係在啓始於第一壓力的排 -17- (15) (15)200405401 氣減壓第一階段中,將閥總成設定在第一有效孔口尺寸’ 而後在此第一階段排氣減壓過程中大致上維持住該最大質 量流率。接著在啓始於第二壓力的排氣減壓第二階段中’ 將閥總成設定在較第一有效孔口尺寸爲大的第二有效孔口 尺寸上,並在該第二階段排氣減壓過程中’大致上維持住 該最大質量流率。該第一有效孔口尺寸係爲第一壓力與臨 限大質量流率的函數。該第二有效孔口尺寸係爲第二壓力 與臨限最大質量流率的函數。 例如,閥總成可以包含有一個主真空閥’以及第一和 第二旁通閥。該第二旁通閥具有較第一旁通閥爲大的開孔 面積。在操作上,第一旁通閥係在第一時段內先開放’並 維持在由式子(1 2 )所計算出來的最大質量流率上。接著 在在該第二時段內,在主真空閥關閉的情形下,關閉第一 旁通閥,並同時開放第二旁通閥,並且維持住最大氣體流 率。接著在第三時段中將第一和第二旁通閥二者均開放’ 而維持住最大氣體流率。最後,在第四時段中,將第一和 第二旁通閥二者均加以關閉,但同時開放主真空閥’而維 持住最大的流率。在泵排過程中,該等第一至第四時段是 大致上相等的。 第5圖是曲線圖,顯示出根據前述之方法的範例。處 理室最初是由具有約2.2公釐孔口直徑之第一孔口閥加以 在1.47分鐘內自約760托泵排至約400托。接著該腔室 由具有約3.0公釐孔口直徑的第二孔口閥加以在1.48分 鐘自約400托泵排至約120托。接著該腔室再藉由開放該 -18- (16) 200405401 二孔口閥而在1 · 4 5分鐘內自約1 2 0托泵排至約2 G托。最 後,該腔室是藉由關閉該二孔口閥而開放一閘閥而在約 120分鐘內泵排至約20毫托。 — 本方法的優點在於可在不造成顆粒污染的情形下非常 快速地泵排該腔室。其使用約5 · 6分鐘來將該處理室自約 7 6 0托泵排至2 0毫托,相較於習用的泵排方法,其等一 般約需超過2 0分鐘。 本發明進一步提供一種可使泵排程序最佳化的方法, 包含下列步驟: a. 設定安全範圍(S ),以防止在快速泵排過程中顆 粒的產生’ S>1 ; b. 決定泵排過程中的最大質量流率(mG); (17) (18) 500μΑ 叫=一^ C.決定第一旁通閥的孔口面積(A!) m〇VR^ 0.68p7 其中Τι是孔口處的氣體溫度,其一般是約4〇〇k; d.設定第一旁通閥要關閉而第二旁通閥要開放的壓力 Pi ; e·決定出要將該腔室自壓力Pa加以排氣減壓至匕所 需的時間(11 ), -19- (17)200405401 =τι1η γ 其中該時間常數是 τ 1 RTm0 (19) (20) f.決定第二旁通閥(A2 )的孔口面積
0.68P (21) g.決定第一和第二旁通閥二者均開放的壓力P2 ; 0·68(Α]+Α2) (21) h.決定出要將該腔室自壓力Ρ1泵排至Ρ2所需的時間 t2 ) t2 = τ2 In 其中該時間常數是 RTmn (22) (23) i.決定出在該二旁通閥均關閉,該閘閥完全開放,且 -20- (18) 200405401 該節流閥位於關閉位置時,質量流率爲m〇時壓力P3。該 壓力P3係依實際上設立的真空系統而定,例如真空管線 的直徑與長度,以及在關閉位置的節流閥的真空導率。其 一般是在自約1托至約2 0托的範圍內。 j·決定出要將該腔室自壓力P2泵排至P3所需的時間 (t3 ),
(22) 其中該時間常數是 (23) τ - % 3 RTm0 k·重覆步驟d至j,直到tl=t2 = t3爲止。 如上所述’本案提供一種具有真空系統的熱處理裝置 ’以及一種快速泵排腔室的方法。前述本發明之特定實施 例的說明係用以做爲示範與說明之用。它們並非是本發明 的全部,或是用以將本發明限制於所揭露的特定形式而已 ,很明顯的,在上述的教示,其有許多種改良、實施及變 化是可能的。其意欲以本文所附之申請專利範圍,以及其 等效者,來界定本發明的範圍。 【圖式簡單說明】 第1圖示意地顯示出根據本發明之實施例的具有真空 -21 - (19) 200405401 系統之熱處理裝置。 第2圖示意地顯示出靠近於腔室表面處的層流及擾流 的速度分佈輪'廓。 , 第3圖示意地顯示出晶圓堆疊與處理室壁部間之流量 分佈輪廓。 第4圖是曲線圖,顯示出在650°C溫度下,不同尺寸 顆粒在不同壓力下的流動區域。 第5圖是曲線圖,顯示出根據本發明之實施例的最佳 泵排壓力路徑。 元件符號表: 1 00 1 02 104 106 108 1 10 1 12 1 14 1 16 118 120 122 124 熱處理裝置 處理室 真空系統 載器 晶圓 可移動托架 內管 外管 環狀通道 氣室 噴射總成 排氣埠 泵浦單元 -22- 200405401 (20) 126 閥總成 128 真空管線 130 主真空閥 132 旁通閥 133 旁通管線 134 節流閥 136 碟片
-23-

Claims (1)

  1. 200405401 (1) 拾、申請專利範圍 1.一種熱處理裝置,包含 一處理室,以及一個用以 真空系統,該真空系統包含有 的泵浦單元,以及位在該泵浦 成,用以控制自該腔室至該泵 總成包含有: 一主真空閥;以及 一旁通閥,該旁通閥係經 線上,並與該主真空閥在流通 2 .根據申請專利範圍第1 總成進一步包含有一第二旁通 該真空管線上,並與該主真空 3 .根據申請專利範圍第2 第一和第二旁通閥係孔口閥, 於該第一孔口閥的孔口面積。 4 .根據申請專利範圍第1 空系統進一步包含有一個設在 的節流閥。 5 .根據申請專利範圍第1 室是一化學蒸鍍腔室。 6.—種將處理室加以排氣 驟: 決定臨限最大質量流率; 將該處理室加以排氣減壓的 一個與該腔室在流動上連通 單元與該腔室之間的一閥總 浦單元的質量流,其中該閥 由一旁通管線連接至真空管 上呈並聯關係。 項之熱處理裝置,其中該閥 閥,經由一旁通管線連接至 閥在流通上呈並聯關係。 項之熱處理裝置,其中該等 該第二孔口閥的孔口面積大 項之熱處理裝置,其中該真 該閥總成與該泵浦單元之間 項之熱處理裝置,其中該腔 減壓的方法,包含有下列步 -24- (2) (2)200405401 將氣體自該腔室內排出減壓;以及 在該排氣減壓步驟中,控制自該腔室內排出之氣體的 質量流,以使其在該排氣減壓步驟中不會超過該臨限最大 氣體流率,而在該排氣減壓步驟內至少複數次大致上等於 該臨限最大質量流率。 7. 根據申請專利範圍第6項之方法,其中該臨限最大 質量流率的決定是依據雷諾數小於2000之實做方式來決 定的,以確保能得到層流。 8. 根據申請專利範圍第6項之方法,其中該臨限最大 質量流率的決定是根據某種事先確認而在意之顆粒型式上 的剪力大致上等於重力而得的。 9. 根據申請專利範圍第6項之方法,其中該控制步驟 包含有讓在排氣減壓步驟中自該腔室排出之氣體流通過大 致上設定在臨限最大質量流率上的質量流控制器,因之而 使得在排氣減壓步驟中自該腔室中排出的氣體的質量流, 在整個的排氣減壓步驟中均能大致上等於該臨限最大質量 流率。 10. 根據申請專利範圍第6項之方法,其中: 該排氣減壓步驟包含有將來自該腔室的氣體導引通過 一個具有閥總成的真空系統;以及 該控制步驟包含有: 在啓始於第一壓力的排氣減壓步驟第一階段中,將該 閥總成設定至第一有效孔口尺寸,該第一有效孔口尺寸係 該第一壓力與該臨限最大質量流率的函數;以及 -25- (3) (3)200405401 在啓始於較該第一壓力爲小之第二壓力的排氣減壓步 驟第二階段中,將該閥總成設定至較第一有效孔Π尺寸爲 大的第二有效孔口尺寸,該第二有效孔口尺寸係該第二壓 力與該臨限最大質量流率的函數。 1 1 .根據申請專利範圍第6項之方法,其中該臨限最 大質量流率的決定是根據下列公式之計算而得到的: 500μΑ 其中mmax代表臨限最大質量率’ μ代表氣體黏度’ A 代表形成在晶圓堆疊與腔室壁部之間之環形流通區域的截 面積,而h代表晶圓堆疊與腔室之壁部間的距離。 1 2 . —種將處理室加以排氣減壓的方法,包含有下列 步驟: 藉由計算下列公式而決定臨限最大質量流率: 500μΑ m眶- h 其中mmax代表臨限最大質量率’ μ代表氣體黏度’ A 代表形成在晶圓堆疊與腔室壁部之間之環形流通區域的截 面積,而h代表晶圓堆疊與腔室之壁部間的距離;以及 藉由控制一閥總成而維持住該最大質量流,該閥總成 包含有一主真空閥和第一與第二旁通閥,該第二旁通閥具 有較第一旁通閥爲大的孔口面積,其中該最大質量流的維 -26- (4) (4)200405401 持係藉由以下步驟而達成的: 在第一時段內,開放該第一旁通閥,並大致上維持該 最大質量流率; 在第二時段內,關閉該第一旁通閥,同時並開放該第 二旁通閥,而大致上維持住該最大質量流率; 在第三時段內,開放該等第一和第二旁通閥二者,並 大致上維持住該最大質量流率;以及 在第四時段內,關閉該等第一和第二旁通閥二者,並 同時開放該主真空閥,而大致上維持住該最大質量流率; 其中該等第一至第四時段是大致上相等的。 -27-
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