JP5654613B2 - 成膜装置及び成膜装置のクリーニング方法 - Google Patents
成膜装置及び成膜装置のクリーニング方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
また、この構成によれば、チャンバを冷却する冷却機構と、チャンバを加熱する加熱機構とを一体化することができるため、装置の大型化を抑制することができる。
以下、本発明を具体化した一実施形態を図1〜図6にしたがって説明する。
次に、成膜工程の一例として、TiN薄膜を形成する工程について説明する。まず、排出路12bに接続されたポンプ(図示略)を駆動して、成膜室11内を所定の真空度に到達するまで真空排気する。そして、成膜装置1に連結されたゲートバルブ(図示略)を介して外部から基板Sを搬入し、基板ステージ35上に載置する。そして静電チャック(図示略)を駆動して、基板Sを静電チャックに吸着させる。
この成膜工程を複数ロット繰り返し、ロット数が所定回数に到達すると、クリーニング工程が実行される。本実施形態では、クリーニングガスとして、ClF3ガス及びArガスを用い、成膜室11の目標温度を130℃にした場合について説明する。
Claims (4)
- チャンバ内に導入された成膜ガスと接触して成膜種を生成する発熱体を備えた成膜装置において、
前記成膜ガスを前記チャンバ内に供給する成膜ガス供給系と、
前記チャンバ内に付着した成膜残渣を排出するクリーニングの際にタングステンの発熱体を非加熱状態にする制御部と、
ClF3を含むクリーニングガスを前記チャンバ内に供給するクリーニングガス供給系と、
前記クリーニングの際に前記チャンバ内を100℃以上200℃以下の目標温度に調整する温度調整部と、
前記成膜残渣と前記クリーニングガスとが反応して生成された反応生成物を前記チャンバから排出する排出系と、を備え、
前記温度調整部は、前記目標温度以上の沸点を有する熱媒を用いて該熱媒と前記チャンバとの間で熱交換を行う温度調整機構を含み、
前記温度調整機構は、前記熱媒を冷却する冷却部と、クリーニングの際に前記熱媒が前記目標温度未満である場合に前記熱媒を加熱する加熱部とを備えることを特徴とする成膜装置。 - 前記成膜ガス供給系は、TiN、TaN、WF6、HfCl4、Ti、Ta、Tr、Pt、Ru、Si、SiN、SiC及びGeのうち、少なくともいずれか一つを含む薄膜、又は有機系薄膜を形成するための前記成膜ガスを供給することを特徴とする請求項1に記載の成膜装置。
- 前記チャンバ内を密封状態に封止するシール部材をさらに備え、
前記シール部材は、パーフロロゴム系、又はパーフロロエラストマー系からなることを特徴とする請求項1又は2に記載の成膜装置。 - チャンバ内に設けられた発熱体に成膜ガスを接触させて成膜種を生成することにより基板に薄膜を形成する成膜工程の後に、前記チャンバ内に付着した成膜残渣を除去するクリーニング工程を行う成膜装置のクリーニング方法において、
タングステンの発熱体を非加熱状態にする工程と、
前記チャンバ内を100℃以上200℃以下の目標温度に調整する温度調整工程と、
ClF3を含むクリーニングガスを前記チャンバ内に導入し、前記クリーニングガスと前記チャンバ内に付着した成膜残渣とを反応させて、生成された反応性生物を排出する工程とを備え、
前記温度調整工程は、前記目標温度以上の沸点を有する熱媒と前記チャンバとの間で熱交換を行う温度調整部を用いて、クリーニングの際に前記チャンバ内の温度を前記目標温度に調整することを特徴とする成膜装置のクリーニング方法。
Priority Applications (1)
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JP2012545758A JP5654613B2 (ja) | 2010-11-24 | 2011-11-22 | 成膜装置及び成膜装置のクリーニング方法 |
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JP2010260896 | 2010-11-24 | ||
JP2010260896 | 2010-11-24 | ||
JP2012545758A JP5654613B2 (ja) | 2010-11-24 | 2011-11-22 | 成膜装置及び成膜装置のクリーニング方法 |
PCT/JP2011/076883 WO2012070560A1 (ja) | 2010-11-24 | 2011-11-22 | 成膜装置及び成膜装置のクリーニング方法 |
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JPWO2012070560A1 JPWO2012070560A1 (ja) | 2014-05-19 |
JP5654613B2 true JP5654613B2 (ja) | 2015-01-14 |
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Country Status (5)
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US (1) | US20130239993A1 (ja) |
JP (1) | JP5654613B2 (ja) |
KR (1) | KR20130100339A (ja) |
TW (1) | TWI551711B (ja) |
WO (1) | WO2012070560A1 (ja) |
Families Citing this family (3)
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JP5774532B2 (ja) * | 2012-03-28 | 2015-09-09 | 東京エレクトロン株式会社 | 連続処理システム、連続処理方法、及び、プログラム |
JP7224175B2 (ja) * | 2018-12-26 | 2023-02-17 | 東京エレクトロン株式会社 | 成膜装置及び方法 |
CN115896745A (zh) * | 2021-11-24 | 2023-04-04 | 无锡先为科技有限公司 | 成膜装置 |
Citations (5)
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JP2000150498A (ja) * | 1998-11-05 | 2000-05-30 | Nec Corp | 化学的気相成長装置及び薄膜成膜方法 |
JP2009108390A (ja) * | 2007-10-31 | 2009-05-21 | Ulvac Japan Ltd | 成膜装置及び成膜方法 |
JP2009194125A (ja) * | 2008-02-14 | 2009-08-27 | Seiko Epson Corp | 半導体装置の製造装置 |
JP2010016086A (ja) * | 2008-07-02 | 2010-01-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4459329B2 (ja) * | 1999-08-05 | 2010-04-28 | キヤノンアネルバ株式会社 | 付着膜の除去方法及び除去装置 |
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KR20000069146A (ko) * | 1996-11-27 | 2000-11-25 | 로벤 에프. 리차드 쥬니어 | 화학 기상 증착 장치 |
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JP3573058B2 (ja) * | 2000-05-17 | 2004-10-06 | セイコーエプソン株式会社 | 温度調整装置 |
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JP5031013B2 (ja) * | 2008-11-19 | 2012-09-19 | 東京エレクトロン株式会社 | 成膜装置、成膜装置のクリーニング方法、プログラム、プログラムを記憶するコンピュータ可読記憶媒体 |
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2011
- 2011-11-22 TW TW100142752A patent/TWI551711B/zh active
- 2011-11-22 KR KR1020137012402A patent/KR20130100339A/ko not_active Application Discontinuation
- 2011-11-22 US US13/988,411 patent/US20130239993A1/en not_active Abandoned
- 2011-11-22 JP JP2012545758A patent/JP5654613B2/ja active Active
- 2011-11-22 WO PCT/JP2011/076883 patent/WO2012070560A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000150498A (ja) * | 1998-11-05 | 2000-05-30 | Nec Corp | 化学的気相成長装置及び薄膜成膜方法 |
JP4459329B2 (ja) * | 1999-08-05 | 2010-04-28 | キヤノンアネルバ株式会社 | 付着膜の除去方法及び除去装置 |
JP2009108390A (ja) * | 2007-10-31 | 2009-05-21 | Ulvac Japan Ltd | 成膜装置及び成膜方法 |
JP2009194125A (ja) * | 2008-02-14 | 2009-08-27 | Seiko Epson Corp | 半導体装置の製造装置 |
JP2010016086A (ja) * | 2008-07-02 | 2010-01-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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Publication number | Publication date |
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US20130239993A1 (en) | 2013-09-19 |
TW201229293A (en) | 2012-07-16 |
TWI551711B (zh) | 2016-10-01 |
JPWO2012070560A1 (ja) | 2014-05-19 |
KR20130100339A (ko) | 2013-09-10 |
WO2012070560A1 (ja) | 2012-05-31 |
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