WO2004008491A3 - Thermal processing system and configurable vertical chamber - Google Patents

Thermal processing system and configurable vertical chamber Download PDF

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Publication number
WO2004008491A3
WO2004008491A3 PCT/US2003/021575 US0321575W WO2004008491A3 WO 2004008491 A3 WO2004008491 A3 WO 2004008491A3 US 0321575 W US0321575 W US 0321575W WO 2004008491 A3 WO2004008491 A3 WO 2004008491A3
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
pedestal
vessel
heating element
substrates
Prior art date
Application number
PCT/US2003/021575
Other languages
French (fr)
Other versions
WO2004008491A2 (en
Inventor
Dale R Dubois
Jamie H Nam
Craig Wildman
Taiquing Qiu
Jeffrey M Kowalski
Original Assignee
Aviza Tech Inc
Dale R Dubois
Jamie H Nam
Craig Wildman
Taiquing Qiu
Jeffrey M Kowalski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US39653602P priority Critical
Priority to US60/396,536 priority
Priority to US42852602P priority
Priority to US60/428,526 priority
Application filed by Aviza Tech Inc, Dale R Dubois, Jamie H Nam, Craig Wildman, Taiquing Qiu, Jeffrey M Kowalski filed Critical Aviza Tech Inc
Priority claimed from US10/521,619 external-priority patent/US20070243317A1/en
Publication of WO2004008491A2 publication Critical patent/WO2004008491A2/en
Publication of WO2004008491A3 publication Critical patent/WO2004008491A3/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775Docking arrangements

Abstract

An apparatus (100) and method are provided for thermally processing substrates (108) held in a carrier (106). The apparatus (100) includes a vessel (101) having a top (134), side (136) and bottom (138), and a heat source (110) with heating elements (112-1, 112-2, 112-3) proximal thereto. The vessel (101) is sized to enclose a volume substantially no larger than necessary to accommodate the carrier (106), and to provide an isothermal process zone (128) extending throughout. In one embodiment, the bottom wall (138) includes a movable pedestal (140) with a bottom heating element therein (112-1), and the pedestal can be lowered and raised to insert the carrier (106) into the vessel (101). The apparatus (100) can include a movable shield (146) that is inserted between the pedestal (140) and the carrier (106) to shield the substrates (108) from the heating element (112-1) and to maintain pedestal temperature. A magnetically coupled repositioning system (162) repositions the carrier (106) during processing of the substrates (108) without use of a movable feedthrough into the volume enclosed by the vessel (101), and without moving the bottom heating element (112-1) in the pedestal (140).
PCT/US2003/021575 2002-07-15 2003-07-10 Thermal processing system and configurable vertical chamber WO2004008491A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US39653602P true 2002-07-15 2002-07-15
US60/396,536 2002-07-15
US42852602P true 2002-11-22 2002-11-22
US60/428,526 2002-11-22

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004521615A JP2005533378A (en) 2002-07-15 2003-07-10 Heat treatment apparatus and configurable vertical chamber
US10/521,619 US20070243317A1 (en) 2002-07-15 2003-07-10 Thermal Processing System and Configurable Vertical Chamber
AU2003259104A AU2003259104A1 (en) 2002-07-15 2003-07-10 Thermal processing system and configurable vertical chamber
EP03764437A EP1522090A4 (en) 2002-07-15 2003-07-10 Thermal processing system and configurable vertical chamber

Publications (2)

Publication Number Publication Date
WO2004008491A2 WO2004008491A2 (en) 2004-01-22
WO2004008491A3 true WO2004008491A3 (en) 2004-06-03

Family

ID=30118590

Family Applications (9)

Application Number Title Priority Date Filing Date
PCT/US2003/021647 WO2004008494A2 (en) 2002-07-15 2003-07-10 Servomotor control system and method in a semiconductor manufacturing environment
PCT/US2003/021641 WO2004007105A1 (en) 2002-07-15 2003-07-10 Apparatus and method for backfilling a semiconductor wafer process chamber
PCT/US2003/021644 WO2004007800A1 (en) 2002-07-15 2003-07-10 Thermal processing apparatus and method for evacuating a process chamber
PCT/US2003/021642 WO2004008493A2 (en) 2002-07-15 2003-07-10 Method and apparatus for supporting semiconductor wafers
PCT/US2003/021575 WO2004008491A2 (en) 2002-07-15 2003-07-10 Thermal processing system and configurable vertical chamber
PCT/US2003/021645 WO2004008052A2 (en) 2002-07-15 2003-07-10 System and method for cooling a thermal processing apparatus
PCT/US2003/021646 WO2004008008A2 (en) 2002-07-15 2003-07-10 Control of a gaseous environment in a wafer loading chamber
PCT/US2003/021648 WO2004008054A1 (en) 2002-07-15 2003-07-10 Variable heater element for low to high temperature ranges
PCT/US2003/021973 WO2004007318A2 (en) 2002-07-15 2003-07-15 Loadport apparatus and method for use thereof

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/US2003/021647 WO2004008494A2 (en) 2002-07-15 2003-07-10 Servomotor control system and method in a semiconductor manufacturing environment
PCT/US2003/021641 WO2004007105A1 (en) 2002-07-15 2003-07-10 Apparatus and method for backfilling a semiconductor wafer process chamber
PCT/US2003/021644 WO2004007800A1 (en) 2002-07-15 2003-07-10 Thermal processing apparatus and method for evacuating a process chamber
PCT/US2003/021642 WO2004008493A2 (en) 2002-07-15 2003-07-10 Method and apparatus for supporting semiconductor wafers

Family Applications After (4)

Application Number Title Priority Date Filing Date
PCT/US2003/021645 WO2004008052A2 (en) 2002-07-15 2003-07-10 System and method for cooling a thermal processing apparatus
PCT/US2003/021646 WO2004008008A2 (en) 2002-07-15 2003-07-10 Control of a gaseous environment in a wafer loading chamber
PCT/US2003/021648 WO2004008054A1 (en) 2002-07-15 2003-07-10 Variable heater element for low to high temperature ranges
PCT/US2003/021973 WO2004007318A2 (en) 2002-07-15 2003-07-15 Loadport apparatus and method for use thereof

Country Status (6)

Country Link
EP (2) EP1540258A1 (en)
JP (2) JP2005533378A (en)
CN (1) CN1643322A (en)
AU (9) AU2003259104A1 (en)
TW (9) TW200411960A (en)
WO (9) WO2004008494A2 (en)

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