JPS6471118A - Thermal treatment equipment for semiconductor wafer - Google Patents
Thermal treatment equipment for semiconductor waferInfo
- Publication number
- JPS6471118A JPS6471118A JP22638887A JP22638887A JPS6471118A JP S6471118 A JPS6471118 A JP S6471118A JP 22638887 A JP22638887 A JP 22638887A JP 22638887 A JP22638887 A JP 22638887A JP S6471118 A JPS6471118 A JP S6471118A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- wafer
- disk
- high temperature
- heaters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enable uniform heating by install ing a disk having heat capacity larger than a wafer adjacently in parallel with the wafer, simultaneously inserting the wafer and the disk into a high temperature furnace and heating the wafer and the disk. CONSTITUTION:A rectangular high temperature furnace 7, a lower section of which is opened, is formed by two vertical parallel plate-shaped heaters 1a-1c, 2a-2c. A heat-insulating material 3 is mounted around the heaters, and a soaking pipe 4 and a reaction pipe 5 are set up inside the heaters and supported to a flange 6. Two wafers 9a, 9b are placed on an inserting jig 8 and inserted into the reaction pipe 5 from the lower section of the high temperature furnace 7. Two disks 10a, 10b having large heat capacity are fitted to the inserting jig 8 so as to hold the wafers in parallel with the wafers 9a, 9b. Accordingly, the temperature-rise rates of the wafers 9a, 9b are reduced, thus equalizing the quantity of the heat treatment of the whole surfaces of the wafers 9a, 9b.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22638887A JPS6471118A (en) | 1987-09-11 | 1987-09-11 | Thermal treatment equipment for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22638887A JPS6471118A (en) | 1987-09-11 | 1987-09-11 | Thermal treatment equipment for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6471118A true JPS6471118A (en) | 1989-03-16 |
Family
ID=16844342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22638887A Pending JPS6471118A (en) | 1987-09-11 | 1987-09-11 | Thermal treatment equipment for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6471118A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5297956A (en) * | 1990-11-30 | 1994-03-29 | Kabushiki Kaisha Toshiba | Method and apparatus for heat treating |
| US6793734B2 (en) * | 2001-07-26 | 2004-09-21 | F.T.L. Co., Ltd. | Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices |
| JP2021019143A (en) * | 2019-07-23 | 2021-02-15 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Substrate processing device, semiconductor device manufacturing method, and program |
-
1987
- 1987-09-11 JP JP22638887A patent/JPS6471118A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5297956A (en) * | 1990-11-30 | 1994-03-29 | Kabushiki Kaisha Toshiba | Method and apparatus for heat treating |
| US6793734B2 (en) * | 2001-07-26 | 2004-09-21 | F.T.L. Co., Ltd. | Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices |
| JP2021019143A (en) * | 2019-07-23 | 2021-02-15 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Substrate processing device, semiconductor device manufacturing method, and program |
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