JPH0119105Y2 - - Google Patents

Description

[Detailed explanation of the invention] (Industrial application field) This invention is used to operate semiconductor ICs by applying power supply voltage and input signals for a certain period of time at high temperatures after completing a series of manufacturing processes of semiconductor ICs, etc. To,
The present invention relates to a semiconductor device burn-in device in which an opening/closing damper is provided inside each multi-zone and a door is provided on the outside so that semiconductor devices can be processed freely without controlling the furnace temperature.

(Prior Art) First, the burn-in device referred to here will be described. This burn-in equipment is used to heat ICs and other devices at high temperatures (100 to 100℃) after completing a series of manufacturing processes.
It is a type of thermostatic chamber that operates under a temperature of 150°C for a certain period of time (approximately 10 to 100 hours) by applying power supply voltage and input signals.

This burn-in involves testing the operation of semiconductor ICs and other products at high temperatures before shipping them to the customer, in order to prevent initial defects from occurring. This is called burn-in, and is an effective method for increasing the reliability of ICs and other devices.

FIG. 6 is a side sectional view showing a schematic configuration of a conventional burn-in device. In FIG. 6, 1 is a housing, and a door 2 is provided on the front surface of the housing 1. By opening this door 2, a burn-in board 3 can be inserted or removed.

A heater 4 and a fan 5 are arranged above the casing 1, and hot air 6 generated by the heater 4 and fan 5 heats the burn-in board 3. The burn-in board 3 includes semiconductors as shown in Figure 7.
A large number of IC7s are mounted as shown in Figure 8, and in a large burn-in device, this burn-in board 3
A total of about 15,000 semiconductor ICs are stored.
are mounted and burn-in by applying voltage at high temperature.

(Problem that the invention attempts to solve) However, burn-in time generally varies depending on integration density, required reliability, and device type. In the case of high-mix, low-volume production, there may be cases where it is desired to burn in products with different burn-in times in one tank.

For example, 50H of A type and 100H of B type.
If you start burn-in of different varieties at the same time,
If you take out the A type after 50 hours, the heat will escape by opening and closing the door, and the temperature distribution will be disturbed, and the B type will be removed.
As for the variety, there was a drawback that the burn-in had to be done again.

That is, when semiconductor devices having different burn-in times are processed in the same burn-in apparatus, a waiting time is required until the burn-in of the semiconductor device having the longest time is completed.

(Means for solving the problem) This invention consists of a plurality of storage zones, a door formed integrally with a rack for inserting and removing the burn-in board provided in each storage zone, and a door that interlocks with the door. A damper is provided that opens and closes the storage zone in the opposite way.

(Function) According to this invention, since the semiconductor device burn-in device is configured as described above, the damper closes when each door of the storage zone whose burn-in time has been reached is opened, and cooling of the semiconductor device can begin. ,
Semiconductor devices can be processed freely without controlling the furnace temperature, and the above-mentioned problems can be solved.

(Example) Hereinafter, an example of the burn-in apparatus for a semiconductor device of this invention will be described based on the drawings. FIG. 1 is a perspective view showing the configuration of an embodiment of the present invention, showing a state in which a burn-in board is stored in a storage zone, and shows an example in which a single door is provided for a plurality of storage zones. .

In FIG. 1, 11 is a burn-in device, which is the main body. A control section 16 is housed on the left side facing the burn-in device 11, and storage zones 11A to 1 are housed on the right side.
1C is provided.

These storage sections 11A to 11C form a multi-zone structure, and racks 17 can be inserted into and removed from each storage section 11A to 11C, and each rack 17 has a plurality of burn-in boards 1.
2 can be inserted and removed multiple times. Each burn-in board 12 is provided with a plurality of semiconductor devices to be burn-in. As shown in FIG. 7, each semiconductor device is provided with external leads on its side surface.

As described above, the burn-in boards 12 are stored in the racks 17 that are removably stored in the respective storage zones 11A to 11C.
2 can be inserted and removed.

In FIG. 1, one door 13 is attached to each of the storage zones 11A to 11C on the front side of the burn-in device 11 so as to be openable and closable. Door 13 is the first
The figure shows the case where one sheet is used, but
As shown in FIG. 2, each storage zone 11A to 11
You may provide doors 13A-13C for each C.

The opening surface of each storage zone 11A to 11C has a third
As shown in the figure, shielding dampers 15 (15A to 15C are shown in FIG. 3) are provided. Since the configurations of the door 13 or 13A to 13C and the damper 15 or 15A to 15C are the same, as shown in FIGS.
An example will be explained in which a number of units are provided. As shown in FIGS. 2 and 3, each storage zone 11A
11C, the dampers 15A to 15C are individually opened and closed in contrast to the opening and closing of the doors 13A to 13C.

These dampers 15 or 15A to 15C
For example, the size is 700 x 400 mm ² and the thickness is 1
An aluminum plate or a stainless steel plate with a thickness of about 2 mm is suitable. Doors 13A to 13C are made of iron plates, contain heat insulating material inside, and are protected by rings made of silicone rubber, etc.
It has a structure in which the burn-in device 11 is brought into close contact with the burn-in device 11. When the burn-in board 12 is not inserted, the dampers 15A to 15C are the third dampers.
As shown in the figure, it is closed by springs 18A to 18C.

That is, the springs 18A to 18C are respectively attached between the back side of the dampers 15A to 15C and the rack 17, and due to the elasticity of the springs 18A to 18C, the damper 1
5A to 15C are designed to open and close.

FIG. 4 shows one unit of the door 13A, damper 15A, and rack 17 corresponding to one storage zone, for example, the storage zone 11A. As is clear from this Figure 4, door 13
A rack 17 is integrally attached to the back side of A. When the door 13A is opened, a damper 15A is automatically restored by an elastic spring 18A to close the storage zone 11A, and conversely, when the door 13A is closed, the rack 17 is closed. The damper 15A is pushed open to open the storage zone 11A, and the burn-in board 12 is stored together with the rack 17 in the storage zone 11A.

As is clear from FIG. 3, a heater 19 and a fan 20 are provided at the top of the burn-in device 11, and a duct 22 for passing hot air 21 is formed behind the storage zones 11A to 11C. has been done.

As a result, the hot air 21 generated by the heater 19 and the fan 20 passes through the duct 22 from the lowermost storage zone 11C to the uppermost storage zone 11A.
burn-in board 12 of each rack 17
Semiconductor ICs mounted on devices are becoming heated.

Next, the operation of the semiconductor device burn-in apparatus of this invention constructed as described above will be explained. First, the burn-in board 12 is inserted into the rack 17 of each storage zone 11A to 11C, and the damper 1
5A to 15C are pushed open, doors 13A to 13C are closed, and the burn-in operation is performed using the control unit 16.
Hot air 21 is generated by a heater 19 and a fan 20 to heat these burn-in boards 12 through a duct 22.

By this heating, after reaching the set temperature, the time is counted up, and when one of the storage zones 11A to 11C, for example, the door 13A of the storage zone 11A is opened, the burn-in time of the semiconductor device mounted on the burn-in board 12 has been reached. , this door 13
Along with A, the rack 17 can be taken out from the front side, and the burn-in board 12 stored in this rack 17 is in this storage zone 11A.
By being away from the opening surface of the storage zone and away from the heat in the storage zone and fully exposed to the outside air, all the semiconductor devices mounted thereon are uniformly cooled by the outside air.

At the same time, the damper 1 in the storage zone 11A
5A is automatically restored by the elasticity of the spring 18A to close the storage zone 11A, resulting in the state shown in FIG. After cooling of the semiconductor device is completed, the burn-in board 12 is removed from the rack 15.

By doing this, storage zone 11A
The heat does not escape from the storage zone, and the temperature distribution to the other storage zones 11B and 11C is not disturbed.
effect can be eliminated. And damper 15
The purpose is achieved by pushing open the burn-in board 12 and managing the time from when it is inserted into the storage zone 11A to when it is removed from the storage zone 11A, so there is no need to control the furnace temperature, and the burn-in board 12 can be freely can be processed.

Note that the embodiment shown in FIGS. 1 and 2 is as follows:
Burn-in device 11 stores storage zones 11A to 11C.
Although an example has been shown in which a plurality of cells are arranged in the vertical direction, it is obvious that they may be arranged in the horizontal direction as shown in FIG.

The multi-door structure shown in FIG. 5 can be used as a large unit block when a large number of semiconductor devices are burn-in at once under the same conditions.

(Effects of the invention) As explained in detail above, according to this invention, a door is provided in each storage zone integrally with the rack for inserting and removing the burn-in board, and the opening and closing of the door is reversed by interlocking with this door. The technical solution was to provide a damper that opens and closes to the storage zone.
The effects listed below are achieved.

(1) Burn-in processing of semiconductor devices can be performed freely without controlling the furnace temperature.

(2) Burn-in of semiconductor devices can be performed with different burn-in times for each storage zone.

(3) When necessary, the door of each storage zone can be opened 180 degrees, allowing cassettes to be removed from the front and semiconductor devices to be completely cooled by outside air.

(4) Even if the door is opened during door maintenance, the inside of the storage zone is sealed by the damper, so it is possible to perform maintenance without lowering the furnace temperature, and there is no need to raise the furnace temperature to the set temperature again after maintenance. This allows efficient use of burn-in equipment and saves a lot of time.

(5) Maintenance is easy because it is mounted on the front door, including the driver inboard.

[Brief explanation of drawings]

FIG. 1 is a perspective view of one embodiment of the burn-in apparatus for semiconductor devices of this invention, and FIG. 2 is a perspective view of another embodiment of the burn-in apparatus for semiconductor devices of this invention.
3 is a sectional view schematically showing the internal structure of the burn-in apparatus for semiconductor devices of FIG. 2; FIG. 4 is an enlarged perspective view showing one unit of the burn-in apparatus for semiconductor devices of this invention; 5 is a perspective view of the essential parts of yet another embodiment of the burn-in apparatus for semiconductor devices of this invention, FIG. 6 is a diagram showing a schematic configuration of a conventional burn-in apparatus for semiconductor devices, and FIG. FIG. 8 is a perspective view of a burn-in board applied to the semiconductor device burn-in apparatus of FIG. 6. FIG. 11... Burn-in device, 11A to 11C...
Storage zone, 12...Burn-in board, 13,
13A~13C...Door, 15,15A~15C...
...damper, 16...control section, 17...easy.

Claims (1)

[Scope of utility model registration request] A plurality of storage zones, a rack that is removably attached to each of the storage zones and has an external lead on the side surface for inserting and removing a burn-in boat that mounts a semiconductor device to be burned in, and a rack that is integrated with the rack. a door that is attached to the storage zone and that inserts and removes the rack from the storage zone when opened and closed; and a door that is attached to the storage zone with an elastic spring that is pushed open when the rack is inserted and restored when the rack is taken out, and serves as an insertion and removal part for the rack. A burn-in device for semiconductor devices comprising a damper that opens and closes the opening surface of the storage zone.