200416773 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於用於熱處理諸如基板的物件之系統及方 法更h別地’本發明係關於用來熱處理、退火及沉積材 料層或自半導體晶圓或基板而移除材料層之裝置及方法。 【先前技術】 熱處理裝置普遍使用用於積體電路（IC)或半導體裝 鲁 置由半導體基板或晶圓的製造。半導體晶圓的熱處理包 括’例如’掺雜劑材料的熱處理、退火、擴散或驅動，材 料層的沉積或成長，以及材料自基板的蝕刻或移除。此些 製程通常要求晶圓加熱至3 0 0 °C至1 3 0 0 °C的溫度在處理時 及之則’且，諸如處理氣體或試劑的一或更多液體輸送至 曰曰圓。再者’此些處理通常要求晶圓保持在一均勻溫度在 整個製程’不管處理氣體的溫度的變化或處理氣體導入處 理室的速率。 __ 一習知熱處理裝置通常包括定位於或由一爐所包圍之 大容量處理室。將熱處理的基板係密封於處理室中，處理 室然後由爐加熱至實施處理的想要溫度。用於許多處理， 諸如化學蒸汽沉積（CVD )，密封的處理室首先蒸發， 且，一旦處理室已達到想要的溫度，一反應或處理氣體被 倒入以形成或沉積試劑件在基板上。 過去’熱處理裝置，尤其是垂直熱處理裝置，需要配 置鄰接至處理室的側壁之防護加熱器在處理的產品晶圓的 -5- (2) (2)200416773 處理帶之上及下方。此配置係不合意地，因爲其需要一更 大的室容量，此容量必須泵送，以處理氣體或蒸汽充塡及 回塡或淸洗，導致增加的處理時間。更者，由於晶’圓距加 熱器的不良視線因素，此架構佔用大量的空間及電力。 習知的熱處理裝置的其它問題包括在加溫處理室及將 處理的晶圓的溫度的處理之前所需之相當長時間，及在降 低溫度的處理之後所需之時間。更者，附加時間係經常需 求來確定在處理可開始之前，處理室的溫度已穩定均勻在 想要的溫度。雖然晶圓的處理所需之實際時間可以是半小 時或更短，預先及後處理時間通常需要1至3小時或更 長。因此，快速增加及/或減小處理室的溫度至一均勻溫 度所需的時間明顯地限制習知熱處理裝置的產量。 相當長的增溫及減溫時間之基本理由係習知熱處理裝 置中的處理室及/或爐的熱容量，在有效加熱或冷卻晶圓 之前，此熱處理裝置係必須加熱或冷卻。 最小化或補償習知熱處理裝置的產量上的限制之普遍 方式，已增加能夠於單一循環中處理的晶圓的數量。藉由 減少每一晶圓的有效處理時間，大量的晶圓的同時處理有 助於最大化裝置的有效產量。然而，如果於處理時出錯， 此方式亦增加風險的大小。亦即，如果於單一處理循環時 發生設備或處理故障，大量晶圓可能由於單一故障而被摧 毀或破壞。這尤其是更大的晶圓尺寸及更複雜的積體電路 之顧慮，其中單一晶圓可能價値1 0 〇 〇至1 〇 〇 〇 〇，依處理 的階段而定。 -6 - (3) (3)200416773 此解決方式的另一問題在於，增大處理室的尺寸來容 納大量的晶圓，以增加處理室的熱容量效應，因此降低晶 圓可被加熱或冷卻之速率。，再者，處理較大批的晶圓之較 大處理室導致或妥協一先進後出的問題，其中最先載入室 的晶圓亦成爲最後移除的晶圓，致使此些晶圓曝露至上升 的溫度中於更長期間，且降低整批晶圓的均勻性。 以上方式的另一問題在於，對於大量晶圓的同時處 理，使用於在熱處理之前及後的許多製程之系統及裝置係 無法補救的。因此，大批或大量晶圓的熱處理，同時增加 熱處理裝置的產量，幾乎不能改善半導體製造廠的整個產 量，且實際上，可能藉由在熱處理裝置之前累積晶圓而降 低產量，或者在下游的其它系統或裝置而造成瓶頸。 上述的習知的熱處理裝置之替代裝置爲快速熱處理 (RTP )系統，其已被發展用於晶圓的快速熱處理。習知 RTP系統通常使用高強度燈來選擇性地加熱單一晶圓或小 量晶圓於一小且透明的通常爲石英的處理室內。RTP系統 最小化或消除處理室的熱容量效應，且因爲此燈具有非常 低的熱容量，晶圓可能由於瞬間開或關此燈而快速加熱及 冷卻。 遺憾地，習知的RTP系統具有明顯的缺點，包括燈 的配置，其在過去係以各包括數個燈鄰接至處理室的側壁 之區或列而配置。此架構係有問題的’因爲由於其不良視 線因素而佔用一大量的空間及電力爲了有效作用，以上所 述爲半導體處理設備的最後生產過程中之額外費用。 (4) (4)200416773 習知的RTP系統的另一問題爲，其不可能提供均勻 溫度分佈在單批晶圓內的多片晶圓上，切甚至在單一晶圓 上。此非均勻溫度分佈的數個理由包括（1 ) 一或數片晶 圓藉由一或數個燈的不良視線因素，及（2 )來自燈的輸 出功率的變化。 再者，單一燈的輸出之故障或變化可能不利地影響晶 圓上的溫度分佈。因爲此燈系統的問題，晶圓被旋轉來確 定由於燈輸出的變化之溫度不均勻性不會轉移至晶圓於處 理中。然而，旋轉晶圓所需之移動部件，尤其是饋通旋轉 入處理室，增加此系統的成本及複雜性，且降低其整個可 靠性。 RTP系統的另一問題爲，保持跨過晶圓的外緣及中央 之均勻溫度分佈。最爲習知的RTP系統不具適當的機構 來調整此類型的溫度不均勻性。結果，過度溫度起伏發生 在晶圓的表面上，其可在高溫造成晶圓中的滑移分離的形 成，除非一黑體接收器被使用，其直徑上比晶圓更大。 習知的以燈爲基礎的 RTP _系統具有其它缺點。例 如，沒有適當機構用來提供均勻功率分佈及溫度均勻於過 度期間，諸如當燈開或關時，除非相位角控制被使用，其 產生電噪音。性能的重複性通常亦是以燈爲基礎的背景， 因爲每一燈隨著其老化而產生不同的性能。更換燈亦是高 成本且費時的’尤其當考慮到一指定的燈系統時可能具有 1 8 0個燈。電力具備條件亦是高成本的，因爲此燈系統可 能需要約2 5 0千瓦的功率消耗。 (5) (5)200416773 因此’需要一種裝置及方法用來快速且均勻地加熱一 批一或數個基板至一想要的溫度跨過每一基板的表面於熱 處理期間。 【發明內容】 本發明提供一解決手段給此些及其它問題，且提供超 過熟習此項技藝的其它益處。 本發明提供用來等溫加熱諸如半導體基板或晶圓的工 作件之裝置及方法，用於實施諸如掺雜材料的退火、擴散 或驅動的製程，材料層的沉積或成長，及材料自晶圓的蝕 刻或移除。 一種熱處理裝置被提供用來處理固持於載體的基板在 局或上升的溫度。此裝置包括一處理室，其具有頂壁、側 壁及底壁，及一熱源，其具有一數個加熱元件接近處理室 的頂壁、側壁及底壁，以提供一等溫環境於一處理帶中， 其中載體係定位來熱處理基板。依據一形態，處理室的尺 寸係選擇來包圍實質不大於容納載體所需的容量之容量， 且，此處理帶實質地延伸遍及處理室。較佳地，此處理室 具有選擇來包圍實質上不大於容納載體所需的125%的容 量。更特別地，此裝置另包括在處理壓力之前抽空處理室 之泵送系統及在處理完成之後回塡處理室之淸洗系統， 且，處理室的尺寸係選擇來提供處理室的快速蒸發及回 塡。 依據本發明的另一形態，處理室的底壁包括具有至少 -9- (6) (6)200416773 一加熱元件於其中之可移動軸座’且’可移動軸座係用來 下降及上升以致使載體具有插入及移除自處理室之基板。 於一個實施例中，此裝置另包括一可移除熱遮蔽，用來插 於軸座中的加熱元件與固持於載體的基板之間。熱遮蔽用 來反射來自軸座中的加熱元件之熱能量回到軸座，且，保 護載體上的基板免受來自軸座中的加熱元件之熱能量。於 此實施例的一版本中，此裝置另包括一閘板，當軸座位於 下位置時，用來移動在載體上方以隔絕處理室。此裝置包 括一泵送系統，用來抽空處理室，且，閘板可用來密封處 理室，藉此，當軸座係於下位置時，致使泵送系統抽空處 理室。 於另一貫施例中，此裝置另包括一磁性輔合重定位系 統’其重定位載體於基板的熱處理期間。較佳地，使用來 重定位載體的機械能量係經由軸座而磁性地耦合至載體， 而無需利用可移動饋通進入處理室，且實質上無需移動軸 座中的加熱元件。更佳地，磁性耦合重定位系統係一磁性 耦合旋轉系統，其旋轉載體於處理帶內於基板的熱處理期 間。 依據本發明的另一形態，此裝置另包括一墊片，其將 載體分離自處理室的頂壁及側壁，及一分佈或交叉流注射 器系統，用來導引一流體流跨過固持於載體的基板的每一 者的表面。交叉流注射器系統一般包括一交叉流注射器， 其具有數個注射器口相對於固持於載體的基板而定位， 且’經由此注射器口，此液體導引在此數個基板的一側 -10- (7) (7)200416773 上。相對於固持於載體的基板而定位之墊片的數個排出口 造成此液體流過此基板的表面。由交叉流注射器系統所導 引的液體可包括處理、氣體或蒸汽，及使用於淸洗或回塡此 室或用來冷卻於其中的基板之惰性淸洗氣體或蒸汽。 【實施方式】 本發明針對用來處理相當小量或小批的一或更多工作 件之裝置及方法，諸如半導體基板或晶圓，其固持於一載 體中，諸如晶盒或晶舟，本發明提供減少的處理循環次數 及改進的製程一致性。 如本文中所使用的，用辭”小批式”意指典型分批系統 中少於數百片晶圓之晶圓數量，較佳在1至約5 3片半導 體晶圓或晶圓的範圍，在此範圍中，1至50片爲產品晶 圓’而剩餘的晶圓係使用於監視目的及作爲隔板晶圓之非 產品晶圓。 熱處理意指將工作件或晶圓加熱至一想要溫度之處 理，此溫度通常在約3 5 0 °C至1 3 0 0 °C的範圍。半導體晶圓 的熱處理可包括例如，加熱處理、退火、掺雜材料的擴散 或推動、材料層的沉積或成長、諸如化學蒸汽沉積，及材 料自晶圓的蝕刻或遺除。 現將參考圖1說明之依據一實施例的熱處理裝置。爲 淸楚的目的，熟習此項技藝者所熟知之熱處理裝置的細節 將在此省略。此些細節係更詳細地說明於例如，共同讓渡 的USP4770590，其在本文中倂入參考。 -11 - (8) (8)200416773 圖1係用來熱處理一批半導體晶圓之熱處理裝置的實 施例的橫截面圖。如其所示，熱處理裝置1 0 0通常包括容 器101，其包圍形成處理室102的容積，處理室102具有 用來容納載體或晶舟106的支撐104，其中一批晶圓108 固持於其中；及熱源或爐110，具有數個加熱元件1121-1、1121-2及1121-3 (以下稱爲加熱元件112)，用來升 高晶圓的溫度至用於熱處理的想要溫度。熱處理裝置1 〇〇 另包括一或更多光學或電氣溫度感知元件，諸如電阻溫度 機制（RTD )或熱耦（T/C )，用以監視處理室102內的 溫度及/或控制加熱元件1 1 2的操作。於所示的實施例 中，溫度感知元件係溫度分佈T/C1 14，其具有多個獨立 的溫度感知節或點（未顯示），用以檢測在處理室1 02內 多個位置之溫度。熱處理裝置100亦可包括一或更多噴射 器1 1 6 (僅顯示一個），用來將諸如氣體或蒸汽的流體導 入用以處理及/或冷卻晶圓108之處理室102中，及一或 更多淸洗口或通孔1 1 8 (僅顯示一個），用以導入氣體以 淸洗處理室及/或冷卻晶圓。墊片1 2 0增加接近晶圓i 〇 8 之處理氣體或蒸汽的濃度於處理的晶圓的區或處理帶 1 2 8，且減少晶圓免於沉積物的剝落或剝離的污染，此沉 積物可形成在處理室1 02的內表面上。處理氣體或蒸汽經 由室襯1 2 0中的排氣口或槽1 2 1離開處理帶。 一些其它適合於注射器1 1 6的架構、製造技術及材料 係更詳細地說明於案名爲”Apparatus and Method f〇r Backfilling a Semiconductor Wafer Process Chamber” 之共 -12- (9) (9)200416773 同讓與的PCT專利申請案，此案在本文中倂入做爲參 考。 通常，容器101係藉由諸如0形環122的密封件而 密封至平台或底座板124以形成處理室102，處理室102 完全封閉晶圓108於熱處理時，處理室102及底座板124 的尺寸係選定來提供處理室的快速蒸發、快速加熱及快速 回塡。有利地，容器1 0 1及底座板1 24係訂製來提供具有 選擇來封閉一容積的尺寸之處理室1〇2，此容積實質上不 0 大於容納具有固持在其中的晶圓1 08的載體丨06的需求。 較佳地，容器1 0 1及底座板1 24係訂製來提供具有容納固 持於其中的晶圓i 〇 8的載體丨0 6所需的約1 2 5至1 5 0 %的 尺寸之處理室102，更佳地，處理室具有不大於容納載體 及晶圓所需的約1 2 5 %之尺寸，爲了最小化輔助所需的打 氣及回塡之室容積。 噴射器1 16的開口、T/C1 14及通孔1 18係使用諸如 〇形環、VCR®、或CF®安裝的密封件而予以密封的。處 馨 理中釋放或導入之氣體或蒸汽係經由形成於處理室1 02 (未顯示）的壁或底座板1 2 4的通風系統1 2 7之前管道或 排氣口 126而蒸發的，如圖1所示。處理室102可於熱處 理時保持在大氣壓力，或經由一泵送系統（未顯示）而蒸 發至低如5毫托的真空，此泵送包括一或更多粗加工泵、 鼓風機、高真空泵及粗加工、節流與前管道閥。 於圖2所示的另一實施例中，底座板！ 2 4另包括一實 環形流通道1 2 9，用來容納及支撐包括環1 3 1的噴射器 -13- (10) (10)200416773 1 1 6，噴射器1 1 6依賴數個垂直噴射管或噴射器π 6 A。噴 射器1 1 6 A可被訂製且成形以提供一向上流、向下流或交 叉流的流動圖案，如下述。環1 3 1及噴射器1 1 6 A係配置 以使氣體噴入晶舟106及容器101之間的處理室1〇2。再 者，噴射器1 1 6 A係繞著環1 3 1而隔開，以使處理氣體或 蒸汽均勻地導入處理室1 02，且，若需要的話，可使用於 淸洗或回塡而將淸洗氣體導入處理室。底座板124係訂製 成具有向外延伸的上凸緣1 3 3、側壁1 3 5及向內延伸的底 座1 3 7之短圓柱形式。上凸緣1 3 3係用來容納並支撐容器 1 〇 1，且包括0形環1 22用來將此容器密封至上凸緣。底 座1 3 7係用來容納並支撐墊片1 2 0於支撐的噴射器1 1 6的 環1 3 1的外側。 再者，圖2所示的底座板1 24結合各種口，其包括回 塡/淸洗氣體進入口 139、143、用來循環底座板124中的 冷卻流體之冷卻口 145、147及用於監視處理室102內的 壓力之壓力監視口 149。處理氣體進入口 151、161將一 氣體自一供應源（未顯示）導入噴射器1 1 6。回塡/淸洗氣 體進入口 1 3 9、1 4 3係提供在底座板1 2 4的側壁1 3 5，主 要地將一氣體自通風/淸洗氣體供應（未顯示）導入通孔 1 1 8。一質量流量控制器（未顯示）或任何其它適當的流 量控制器係成列地配置於氣體供應與口 1 3 9、1 43、1 5 1及 1 6 1之間，以控制氣體流入處理室1 02。 容器1 〇 1及墊片1 20可以任何金屬、陶瓷、結晶或玻 璃材料而製成，此材料能夠承受高溫及高真空操作的熱及 -14- (11) (11)200416773 機械應力，且抗拒來自處理中所使用或釋放的玻璃及蒸汽 之侵蝕。較佳地，容器1 0 1.及墊片1 2 0係以具有一足夠厚 度的不透明、半透明或透明石英玻璃製成，以承受機械應 力且抗拒製程副產品的沉積，藉此減少處理環境的潛在污 染。更佳地，容器101及墊片120係以石英而製成，石英 減少或消除離開處理的晶圓1 0 8的區或處理帶1 2 8之傳 熱。 此批晶圓1 08係經由載入閘門或載入口（未顯示）而 導入熱處理裝置100，然後經由處理室或底座板124中的 入口或開口進入處理室102，底座板124能夠與其形成一 氣密密封。於圖1所示的架構中，處理室1 〇 2係一垂直反 應器，且，此入口利用一可移動軸座1 3 0，軸座1 3 0係於 處理時升高而以諸如0形環1 3 2的密封而密封在底座板 1 2 4上，且，降低以使諸如晶舟操縱單元（b Hu )(未顯 示）的操作器或自動化操縱系統以定位載體或晶舟1 0 6在 附接至此軸座的支撐104。 加熱元件11 2包括定位接近處理室1 〇 2的頂部1 3 4 (元件1 1 2 - 3 )側部1 3 6 (元件1 1 2 - 2 )及底部1 3 8 (元件 1 1 2 -1 )之元件。有效地，加熱元件1 1 2圍繞晶圓以達到 晶圓的良好觀察要素，因此提供等溫控制容積或處理帶 1 2 8於處理的晶圓1 0 8的處理室中。接近處理室1 〇2的底 部1 3 8之加熱元件1 1 2 - 1可配置於軸座1 3 0中或之上。如 果想要的話，附加的加熱元件可配置於底座板1 2 4中或之 上以自加熱元件1 1 2 -1補充熱。 -15- (12) (12)200416773 於圖1所示的實施例，接近處理室的底部之加熱元件 112-1較佳地凹入可移動軸座130中。軸座130係以熱及 電子絕緣材料或絕緣塊1 40而製成，其具有崁入其中或附 接至上之電阻加熱元件112-1。軸座130另包括一或更多 反饋感知器或使用來控制加熱元件1 1 2 - 1的T/C 1 1 4。於 所示的架構中，T/C 1 4 1係崁入於絕緣塊1 4 0的中心。 側加熱元件112-2及上加熱元件112-3可配置於容器 1 〇 1附近的絕緣塊1 1 0中或之上。較佳地，側加熱元件 112-2及上加熱元件112-3係凹陷於絕緣塊11〇。 加熱元件1 1 2及絕緣塊1 1 〇與1 4 0可以任一方式而予 以架構，且可以任一方式及以任一材料而予以製造。一些 適合的架構、製造技術及材料係熟習此項技藝中，且，其 它者係說明於案名爲”Variable Heater Element For Low To High Temperature Ranges”的PCT專利申請案中，此案係 與本所案號FP-71795-PC同一天提出申請，且在本文中倂 入作爲參考。 較佳地，爲了獲得高至 1 1 5 0 °C的想要處理溫度，接 近處理室102的底部138之加熱元件112-1具有自約 O.lkW至10kW的最大功率輸出，以及至少1150°C的最大 處理溫度。尤其，此些下加熱元件1 1 2 -1具有至少約 3 · 8 k W的功率輸出，以及至少9 5 0 °C的最大處理溫度。於 一個實施例中，側加熱元件1 1 2-2功能上分成數個帶，其 包括最接近軸座1 3 0的下帶及上帶，每一帶能夠自上加熱 元件1 1 2 - 3及下加熱元件1 1 2 -1相互獨立地操作在不同功 -16- (13) (13)200416773 率位準及工作循環。 加熱元件1 1 2係以任合適合方式而予以控制，其它者 係說明於案名爲”Feed Forward Temperature Co ή troller” 的 PCT專利申請案中，此案係與本所案號FP-71754-PC同一 天提出申請，且在本文中倂入作爲參考。 如果未去除，來自絕緣塊1 4 0及下加熱元件1 1 2 -1之 污染係藉由容納加熱元件及絕緣塊於倒置的石英坩堝〗4 2 中而減少’石英坩堝1 42作爲加熱元件及絕緣塊與處理室 0 102之間的障壁。坩堝142亦對著載入口及BHU環境而 予以密封，以更進一步減小或去除處理環境的污染。通 常，坩堝1 42的內部係在標準大氣壓力，使得坩堝丨42應 足夠的強來承受處理室102及軸座130之間的壓力差在大 氣壓的整個坩堝1 4 2中。 在晶圓1 0 8係載入或卸載時，也就是說軸座〗3 〇位於 下降位置（圖3 )，下加熱元件n 2 -1被起動來保持低於 想要的處理溫度的空載溫度。例如，用於具有9 5 0 °C的下 加熱元件的想要處理溫度之製程，空載溫度可以是5 0至 1 5 0度。空載溫度可設定更高用於特定製程，諸如具有一 高想要的處理溫度及/或高想要的升溫率之製程，或降低 下加熱兀件1 1 2 - 1上的熱循環功效，因此，延伸元件壽 命。 爲了更降低預處理時間，此時間爲製備用於處理的熱 處理裝置1 0 0所需之時間，下加熱元件；[丨2 -1可升溫至想 要的製程溫度或以下於推動或負載時，也就是在具有晶圓 -17- (14) (14)200416773 108的晶舟106定位於其上之軸座130正上升時。然而， 爲最小化晶圓1 0 8及熱處理裝置1 0 0的組件上之熱應力， 這是較佳地在加熱元件1 ·1·2 - 3及1 1 2 - 2分別地配置接近處 理室1 0 2的頂部1 3 4與側部1 3 6的同時，使下加熱元件 1 1 2 -1達到想要的製程溫度。因此，用於某些製程，諸如 需要高想要的製程溫度的製程，下加熱元件1 12-1的溫度 可在軸座1 3 0係上升之前而係上升的，同時一批中的最後 一個晶圓1 0 8正被載入。 同樣地，將領會到，在處理之後及於拉動或卸載循環 時’也就是在軸座1 2 8正下降時，對下加熱元件U 2 - 1的 功率可被降低或完全去除，以使軸座1 3 0降溫至空載溫 度’於用於晶圓108的冷卻及藉由 BHU的卸載之製備 中〇 在習知的推動或卸載循環之前爲輔助冷卻軸座1 3 0， -空氣用之淸洗管線或一惰性淸洗，諸如氮氣，係經由絕 緣塊1 4 〇而安裝的。較佳地，氮氣係經由絕緣塊〗4 〇的中 心注入穿過通道1 44，且允許流出於絕緣塊1 40的上部及 iff ^ 1 42的內部之間至其周圍。熱氮氣然後經由高效率顆 半立；(HEPA)過濾器（未顯示）或至工廠廢氣系統 (未顯示）。此中心注入架構促成晶圓1 0 8的中心的更快 冷谷卩’且，因此理想地最小化晶圓的底部晶圓的中心/邊 ϋΜ ^差’此可能以不同方式導致由於水晶晶格結構的滑 動脫節之受損。 如上所述，爲增加或延伸下加熱元件1 1 2 - 1的壽命， -18- (15) (15)200416773 空載溫度可設定更高、更接近想要的處理溫度以降低熱循 環的效果。再者，這亦是合意地週期性烘烤加熱元件 1 1 2 - 1於富氧的環境，以促成保護性氧化表面塗層的形 成。例如，在以諸如Kanthal®的含鋁合金而形成之抗熱元 件之處，烘烤加熱元件I〗2-1於一富氧環境中醋成一鋁土 氧化物表面成長。因此，絕緣塊1 4 0可另包括一氧氣管線 (未顯示），以促使保護性氧化表面塗層的形成於加熱元 件1 1 2 - 1的烘烤期間。替代地，烘烤用的氧氣可經由使用 於處理期間的淸洗管線而導入，以經由三向閥而供應冷卻 氮氣。 圖3係熱處理裝置1 0 0的一部份的橫截面圖。圖3顯 示晶圓1 0 8正載入或卸載時之熱處理裝置1 〇〇，也就是在 軸座1 3 0位於下位置。於此操作的模式中，熱處理裝置 1〇〇另包括熱遮蔽146，熱遮蔽146可旋轉或滑入定位於 軸座]3 0及晶舟1 〇 6中的下晶圓1 0 8上方。爲改善熱遮蔽 1 4 6的性能，熱遮蔽通常係反射在面向加熱元件n 2 _丨的 側上’而吸收在面向晶圓1 08之側上。下降於晶舟1 〇6的 目的包括增加下降於晶舟1 0 6之晶圓1 0 8的冷卻率，且輔 助保持軸座1 3 0及下加熱元件1 1 2 - 1的空載溫度，以減少 升溫處理室1 02至想要的處理溫度所需的時間。現將更詳 細地參考圖3至6的說明的具有一熱遮蔽之熱處理裝置的 實施例。 圖3亦顯示具有軸座加熱元件112-1及熱遮蔽146之 熱處理裝置1 00的實施例。於此所示的實施例中，熱遮蔽 -19- (16) (16)200416773 146係經由臂M8附接至可旋轉軸150，可旋轉軸15〇係 藉由一電氣、氣動或液壓致動器而轉動的，以將熱遮蔽 1 4 6轉入加熱的軸座丨3 〇與晶舟！ 〇 6中的最低晶圓丨〇 8間 之第一位置於拉動或卸載循環期間，且，在晶舟丨〇6的底 部正要進入室1 02之前而移除或旋轉至不在軸座及晶圓之 間的第二位置於推動或負載循環的至少一最後部份或端的 期間。較佳地，可旋轉軸1 5 0係安裝在或附接至使用於升 及降軸座1 3 0的機械（未顯示），因此在軸座的頂部已淸 除處理室1 02時，能夠使熱遮蔽〗46旋轉進入定位。使熱 遮蔽146定位於負載循環期間，能夠使加熱元件ιυ」加 熱至一想要的溫度，此溫度比以其它方式更快速。相似 地’於卸載循環期間，藉由反射自軸座加熱元件η 2 放 射的熱’熱遮蔽1 4 6有助於冷卻晶圓，尤其更接近軸座的 晶圓。 替代地，可旋轉軸1 5 0可安裝在或附接至熱處理裝置 1 0 0的另一部份，且其適於與軸座1 3 0同步軸向地移動， 或’僅在軸座完全下降時，將熱遮蔽1 4 6轉入定位。 圖4係圖3的軸座加熱元件]1 2- 1的示意圖，其解說 熱能量或熱輻射自下加熱元件回到軸座1 3 0的反射，以 及，來自晶圓的成批或堆疊中的下晶圓1 08之熱能量或熱 輻射的吸收。這已確定到，想要的特性、高反射性及高吸 收性可使用數種不同的材料而獲得，諸如金屬、陶瓷、玻 璃或聚合物塗層、或者其組合物。經由實例，以下的表列 出各種適合的材料及對應參數。 -20- 200416773 (17) 表1 材料 吸收性 反射性 不鏽鋼 0.2 0.8 不透明石英 0.5 0.5 拋光β呂 0.03 0.97 碳化矽 0.9 0.1 依據一個實施例，熱遮蔽1 46可以單一材料諸如碳化 砂（SiC)、不透明石英或不鏽鋼而製成，其已被拋光在 一側上，而磨損、硏磨或粗糙加工在另一側上。粗糙加工 熱遮敝1 4 6的表面可明顯地改變其傳熱特性，特別是其反 射性。 於另一實施例中，熱遮蔽1 4 6可以兩層不同的材料而 製成。圖5係熱遮蔽146的示意圖，其具有諸如siC或不 透明石英的材料的上層1 5 2，具有高吸收性，及諸如拋光 不鏽鋼或拋光銘的金屬或材料的下層丨5 4，具有高反射 性。雖然如具有大約相等厚度所示，將領會到，由於熱膨 漲的係數的差，依據熱遮蔽1 4 6諸如最小化層間的熱應力 的具備條件而定，上層152或下層154可具有一相對更大 的厚度。例如，於某些實施例中，下層〗5 4可以是一非常 薄層或膜的拋光金屬，沉積、形成或電鍍在一石英板上， 石英板形成上層1 5 2。此些材料可藉由諸如結合或扣接件 的習知機構而整體地形成或互鎖或，結g。 於另一實施例中，熱遮蔽1 4 6另包括內部冷卻通道 -21 . (18) (18)200416773 156，更加地使晶圓i〇8與下加熱元件112-1絕緣。於此 實施例的一種版本中，圖6所示，內部冷卻通道1 5 6係形 成在兩個不同的材料層1 5 2與1 5 4之間。例如，內部冷卻 通道1 5 6可藉由銑床或任何其它適合技術而形成於高吸收 性不透明石英層1 52，且藉由金屬層1 54或諸如錫或鋁塗 層的塗層而予以覆蓋。替代地，內部冷卻通道1 5 6可形成 於金屬層H4或金屬層154及石英層152兩者中。 圖7係熱遮蔽組合1 5 3的實施例的立體圖，其包括熱 遮蔽1 4 6、臂1 4 8、可旋轉軸1 5 0及致動器1 5 5。 如圖8所示，熱處理裝置1 00另包括閘板1 5 8，閘板 1 5 8可旋轉或滑動或以其它方式移入定位在晶舟1 06的上 方，當軸座1 3 0係位於完全下降位置時，使處理室1 02與 外側或載入口環境隔絕。例如，當軸座1 3 0係位於一下降 位置時，閘板1 5 8可滑動入位在晶舟1 0 6上方，且上升來 隔絕處理室1 02。替代地，當軸座1 3 0係位於一下降位置 時，閘板1 5 8可旋轉或擺入定位在晶舟1 0 6上方，且接著 上升來隔絕處理室1 〇2。選擇性地，閘板1 5 8可繞著或相 對於螺栓或桿而旋轉，當擺入定位在晶舟1 06上方時，同 時上升此閘板來隔絕處理室1 02。 用於在真空下正常操作的處理室102，諸如於一 CVD 系統，閘板1 5 8可緊靠著底座板1 24來形成真空密封，以 致使處理室1 02泵送至處理壓力或真空。例如’可能想要 泵送處理室1 02在連續成批的晶圓之間，以降低或消除污 染製程環境之可能性。形成一真空密封較佳地係以諸如〇 -22- (19) (19)200416773 形環的大直徑密封而予以完成，且因此，閘板1 5 8可合意 地包括數個冷卻此密封的水道1 6 0。於圖8所示的實施例 中，當軸座1 3 0係位於上升位置時，閘板1 5 8以使用來密 封坩堝1 42的相同0形環1 3 2而予以密封。 用於處理室102正常操作在大氣壓力之熱處理裝置 1 3 0，閘板1 5 8簡單地爲一絕緣塞，其設計來減小來自處 理室的底部之熱損失。用來完成上述目的的一個實施例包 含不透明石英板的使用，其可或不可另包括數個冷卻通道 位在其下方或內部。 當軸座1 3 0係位於完全下降位置時，閘板1 5 8係移入 定位在處理室102下方，然後藉由一個或更多電氣、液壓 或氣動致動器（未顯示）而上升來隔絕處理室。較佳地， 致動器係使用約1 5至6 0 ( P S I G )空氣的氣動致動器，此 致動器係普遍可取得在用於氣動閥的操作的熱處理裝置 1 〇 0上。例如，於此實施例的版本中，閘板1 5 8可包含具 有數個輪的板，經由此些輪短閉臂或懸臂而附接至其兩 側。操作時，此板或閘板1 5 8輥入定位在兩平行導軌上的 處理室1 02下方。停止在導軌上，然後使懸臂樞轉而將閘 板1 5 8的運動轉換成向上方向以密封處理室1 〇 2。 如圖9所示，熱處理裝置1 00另包括磁耦合晶圓旋轉 系統1 6 2，於處理時，磁耦合晶圓旋轉系統1 6 2旋轉支撐 1 〇 4及晶舟1 0 6以及支撐至其上的晶圓1 0 8。旋轉晶圓 1 〇 8於處理時藉由平均加熱元件1 1 2中及處理氣體流中之 任何非均勻性而改善晶圓內（WIW )均勻性，以產生一均 (20) (20)200416773 勻的晶圓上溫度及特別反應溫度分佈。通常，晶圓旋轉系 統1 6 2能夠旋轉晶圓1 〇 8在約0 . 1至1 〇轉/分（RP Μ )的 速度。 晶圓旋轉系統1 6 2包括驅動組合或旋轉機械1 6 4，其 具有諸如電氣或氣動馬達之旋轉馬達1 66，及裝入諸如退 火的聚四氟乙譆或不鏽鋼的抗化學容器之磁鐵1 6 8。配置 在軸座1 3 0的絕緣塊1 4 0正下方之鋼環1 7 0及具有絕緣塊 之驅動軸1 72將旋轉能量轉移至配置在軸座的上部的絕緣 塊上之另一磁鐵174。鋼環170、驅動軸172及第二磁鐵 1 74亦裝入抗化學的容器化合物。配置在軸座〗3 〇的側之 磁鐵174經由坩堝142而與鋼環或磁鐵176而磁性地耦 合，磁鐵176崁入或附接至處理室1〇2中的支撐104。 經由軸座1 3 0而磁性地耦合旋轉機械1 64去除了將其 配置於處理環境內或具有一機械饋通之需要，因此消除洩 露及污染的潛在源。更者，配置旋轉機械1 64在外側且在 距處理的一些距離最小化曝光的最大溫度，因此增加晶圓 旋轉系統1 62的可靠度及操作壽命。 除了以上之外，晶圓旋轉系統1 6 2可另包括一或更多 感知器（未顯示），以確定適當的晶舟1 0 6位置及適當的 磁性耦合於處理室1 02中的鋼環或磁鐵1 7 6及軸座1 3 0中 的磁鐵1 74之間。決定晶舟1 06或晶舟位置確認感知器的 相對位置之感知器係尤其有效。於一個實施例中，晶舟位 置確認感知器包括一感知器凸部（未顯示）在晶舟106 上，以及一光學或雷射感知器配置在底座板124下方。操 -24- (21) (21)200416773 作時’在晶圓1 0 8已被處理之後，軸座丨3 〇下將約3英吋 在底座板1 24下方。在此，晶圓旋轉系統1 62被下指令轉 動晶舟1 0 6，直到晶舟感知器凸部可被看到。然後，晶圓 旋轉系統1 6 2被操作來校準此晶舟，使得晶圓丨〇 8可被卸 載。在此操作完成之後，晶舟下降至負載/卸載高度。在 起始檢查之後’僅#夠自標記感知器而確認晶舟位置。 如圖1 〇所示’改良的噴射器2 1 6較佳地使用於熱處 理裝置1 0 0。噴射器2 1 6係分佈或交叉（X )流噴射器 2 1 6 - 1，其中處理氣體或蒸汽係經由噴射器開口或孔口 1 8 0而導引在晶圓1 〇 8及晶舟1 06的一側上，且，於層流 中致使流過晶圓的表面而離開相對側上的室管路1 2 0中的 排出口或槽1 82。藉由提供處理氣體或蒸汽的改良分佈在 較早的向J1流或向下流架構上’ X-流噴射器116-1改善一 批晶圓1 0 8內的晶圓均勻性。 因此，X-流噴射器2 1 6可用作其它目的，包括冷卻用 的氣體（例如，氦 '氮、氫）的注入，用於晶圓1 08間的 強迫對流冷卻。X-流噴射器2 1 6的使用導致晶圓1 〇8間之 更不均勻冷卻，不管配置在堆疊或成批的下或上，且，相 較於較早的向上流或向下流架構，此些晶圓係配置於中 間。較佳地，噴射器2 1 6的孔口 1 8 0係訂製、成形且定位 以提供一噴霧圖案’此噴霧圖案促成晶圓1 0 8間的強迫對 流冷卻，因此不會產生跨過晶圓的大溫度斜率。 圖1 1係圖1 〇的熱處理裝置1 〇〇的部份的橫截側視 圖，其顯不與室襯120相關之注射器孔口 180及與晶圓 -25- (22) (22)200416773 1 08相關之排出槽1 82的解說部份。 圖1 2係沿著圖1 0的線A - A的熱處理裝置1 〇 〇的部 份的平面'圖，其顯示來自主要與次要注射器1 8 4、·，U 6的 孔口 1 8 0 -1、1 8 0 - 2之層氣流，跨過晶圓丨〇 8的解說一者 且到依據一個實施例之排出槽1 8 2 -1及1 8 2 - 2。應注意 到，如圖1 0所示的排出槽1 8 2的位置已自此位置圖1 2所 示的排出槽182-1及182-2而移位，以允許解說排出槽及 噴射器1 1 6 -1於熱處理裝置的單一橫截面圖中。亦應注意 到，注射器184、186及排出槽182-1及182-2相對於晶 圓1 〇 8與室襯1 2 0的尺寸已被擴大，以使更淸楚地解說自 注射器至排出槽之氣體流。 亦如圖1 2所示，處理氣體或蒸汽最先自晶圓1 0 8離 開而導向墊片1 20，以致使處理氣體或蒸汽在達到晶圓之 前而混合。孔口 180-1及180-2的架構特別有效用於製程 或製法，其中不同反應物係自主要與次要注射器1 84、 186的每一者而引出以形成一多成份膜或層。 圖13係沿著圖10的線A-A的熱處理裝置1〇〇的部 份的另一平面圖，其顯示來自主要與次要注射器184、 1 8 6的孔口 1 8 0之替代氣體流路徑，跨過晶圓1 0 8的解說 一者且到依據另一實施例之排出槽1 82。 圖14係沿著圖10的線A-A的熱處理裝置1〇〇的部 份的另一平面圖，其顯示來自主要與次要注射器184、 1 8 6的孔口 1 8 0之替代氣體流路徑，跨過晶圓1 0 8的解說 一者且到依據另一實施例之排出槽1 82 ° -26- (23) (23)200416773 圖1 5係沿著圖1 0的線A-A的熱處理裝置1 〇〇的部 份的另一平面圖，其顯示來自主要與次要注射器184、 1 8 6的孔口 1 8 0之替代氣體流路徑，跨過晶圓1 0 8的解說 一者且到依據另一實施例之排出槽1 8 2。 圖1 6係熱處理裝置1 00的橫截面圖，其具有依據替 代實施例之兩或更多個向上流注射器1 16-1、1 16-2。於此 實施例中，處理室1 〇2低處中自具有各別出口孔的處理注 射器116-1及116-2進入之處理氣體或蒸汽，向上且跨過 晶圓108，以及消耗氣體離開墊片120的上部的排出槽 1 8 2。一向上流注射器亦係顯示於圖1。 圖1 7係熱處理裝置1 00的橫截面圖，其具有依據替 代實施例之向下流注射器系統。於此實施例中，處理室 1 02高處中自具有各別孔口的處理注射器1 16-1及1 1 6-2 進入之處理氣體或蒸汽，向下且跨過晶圓1 08，以及消耗 氣體離開墊片120的下部中的排出槽182。 有利地，注射器1 1 6、2 1 6及/或墊片1 2 0可快速且容 易地置換，或與其它注射器及墊片交換，其具有自處理帶 1 28注入且排出之不同位置。此些熟習此項技藝者將領會 到，圖1 〇所示之X -流噴射器2 1 6的實施例增加一程度的 製程撓性，其藉由能夠使處理室1 〇 2內的流圖案快速且容 易地自如圖1 〇所示的交叉流架構改變成向上流如圖i及 1 6所示，或如圖1 7所示的向下流架構。此可利用容易安 裝的注射器組合2 1 6及墊片1 20而予以達成，而將流程幾 何自交叉流轉換至向上流或向下流。 -27- (24) (24)200416773 噴射器1 1 6、2 1 6及墊片丨20可以是分開的組件，或 注射器可與墊片整體形成作爲單一件。後者實施例係特別 有效於想要經常改變處理室1 02架構之應用。 用於操作熱處理裝置1 00之解說方法或製程係參考圖 1 8而予以說明。圖1 8係顯示用於熱處理一成批的晶圓 1 0 8的方法的步驟之流程圖，其中此批的晶圓的每一晶圓 係快速且均勻加熱至想要的溫度。於此方法中，軸座1 3 0 被下降，而，熱遮蔽146移入定位，然而軸座130被下降 來自下加熱元件1 1 2 -1的熱反射回到軸座1 3 0，爲保持其 溫度且使完成的晶圓1 〇 8絕緣（步驟1 9 0 )。選擇性地， 閘板 1 5 8移入定位以密封或隔絕處理室1 〇2 (步驟 192 )，及，電力係施加至加熱元件 1 12-2、1 12-3，以係 預加熱處理室1 〇2至或保持一中間或空載溫度（步驟 194)。裝有新晶圓108的載體或晶舟106係定位在軸座 1 3 0上（步驟1 96 )。軸座1 3 0被上升來定位晶舟於處理 帶128，然而同時移除閘板158及熱遮蔽146，並升溫下 加熱元件 1 1 2 _ 1，以預加熱晶圓至中間溫度（步驟 197)。較佳地，在晶舟106正位於處理帶128之前熱遮 蔽1 4 6被移除。諸如處理氣體或蒸汽的流體係經由數個注 射器口 180而導引在晶圓108的一側上（步驟198 )。此 流體自注射器口 1 8 0跨過晶圓1 0 8的表面而流至排出槽 1 82，排出槽1 82定位於晶圓相對於注射器口的相反側上 的墊片120 (步驟199 )。選擇性地，晶舟106可旋轉於 處理帶1 2 8內於此批晶圓1 0 8的熱處理期間，以更進一步 -28- (25) (25)200416773 加強熱處理的一致性’其藉由經由軸座1 3 0將機械能量磁 性地耦合至載體或晶舟1 〇 6而將其重定位於晶圓處理期間 (步驟2 0 0 )。 現將參考圖1 9說明依據另一實施例的熱處理裝置 100之方法及處理。圖19係顯示用來熱處理一載體中一 批晶圓10 8的方法的實施例的步驟。於此方法中，裝置 1〇〇設有處理室102，其尺寸及容量實質上不大於容納具 有晶圓108固持其中的載體106所需的尺寸及容量（缺防 護加熱器）。軸座130被下降，且，具有晶圓108固持其 中之晶舟106定位其上（步驟202)。軸座130被上升以 插入處理室1 02中的晶舟，然而同時預加熱晶圓1 08至一 中間溫度（步驟204 )。電力被施加至加熱元件1 12-1、 1 12-2、1 12-3，每一加熱元件配置接近處理室102的頂部 1 3 4、側部1 3 6及底部1 3 8的至少一者以加熱處理室（步 驟2 0 6 )。選擇性地，對加熱元件的至少一者之電力係獨 立地調整，以提供一實質地等溫環境在一想要的溫度於處 理室1 0 2中的處理帶1 2 8 (步驟2 0 8 )。當晶圓1 0 8已熱 處理且同時保持一想要的溫度於處理帶1 2 8時，軸座1 3 0 被下降，且熱遮蔽1 4 6移入定位，以絕緣加工的晶圓！ 〇 8 且將來自下加熱元件1 1 2 - 1的熱反射回軸座1 3 0而保持其 溫度（步驟2 1 0 )。且，選擇性地，閘板1 5 8移入定位以 密封或隔絕處理室1 〇 2以及施加至加熱元件1 1 2 - 2、1 1 2 - 3 的電力，而保持處理室的溫度（步驟2 1 2 )。晶舟1 06然 後自軸座1 3 G而移除（步驟2 1 4 )，且，裝有新一批將處 -29- (26) (26)200416773 理的晶圓之另一晶舟定位在軸座上（步驟216)。閘板 158被重定位或移除（步驟218)，熱遮蔽被退出或重定 位以預加熱晶舟1 0 6中的晶圓1 0 8至一中間溫度，然而同 時上升軸座1 3 0以使晶舟插入處理室1 〇 2中來熱處理此批 新晶圓（步驟2 2 0 )。 已被確認，如上述而提供並操作之熱處理裝置1 〇〇比 習知系統減少處理或循環達約7 5 % 。例如，，一習知大 批量熱處理裝置可在約2 3 2分內處理1 〇 〇片產品晶圓，其 包括預處理及後處理時間。本發明的熱處理裝置1 〇 〇在約 5 8分內實施相同處理在一小批2 5片產品晶圓1 〇 8上。 爲了解說及說明的目的，本發明的特定實施例及實例 的以上說明已被提出，且，雖然本發明已藉由一些先前實 例而予以說明，不應被解釋爲限制之用。此些實例將不預 期是徹底的、或者將本發明限制成所揭示的精確形式，依 據以上的教導，本發明範圍內的許多修改、改良及變化都 是可能的。可預期到，本發明的範圍包含以上所述的一般 性領域，以及申請專利範圍內所界定的及其等效物。 【圖式簡單說明】 在閱讀以下詳細說明以及以下提供的附圖及申請專利 範圍之後，本發明的此些及各種其它特徵與優點將係顯而 易見’其中· 圖1係依據本發明的實施例之具有用來提供等溫控制 容量之熱處理裝置的橫截面圖，其利用習知上升流架構； -30- (27) (27)200416773 圖2係使用於圖1所示的熱處理裝置之底座板的替代 實施例的透視圖； 匱I 3係依據本發明的實施例之具有軸座加熱器及熱遮 板之熱處理裝置的一部份的橫截面圖； 圖4係依據本發明的實施例之圖3的軸座加熱器及熱 遮板的示意圖； Η 5係依據本發明之熱遮板的實施例的示意圖，其具 有高吸收性的材料的上層及具有高反射性的材料的下層； 圖6係依據本發明之具有冷卻通道的熱遮板的另一實 施例的示意圖； 匱I 7係依據本發明之熱遮板及致動器的實施例的透視 圖； 匱i 8係依據本發明的實施例之具有閘板的熱處理裝置 的一部份的橫截面圖； W 9係依據本發明的實施例之具有軸座加熱器及磁耦 合晶圓旋轉系統的處理室的橫截面圖； 圖1 0係依據本發明的實施例之具有交叉流噴射器系 就的熱處理裝置的橫截面圖； 圖1 1係依據本發明的實施例之圖1 〇的熱處理裝置的 一部份的橫截側視圖，其顯示噴射器孔口相對於墊片及排 氣槽相對於晶圓的位置； 圖1 2係依據本發明的實施例之沿著圖1 〇的線a-A 的圖1 0的熱處理裝置的一部份的平面圖，其顯示來自跨 過一晶圓之主要及次要噴射器的孔口及至排氣口之氣體 -31 - (28) (28)200416773 流； 圖1 3係依據本發明的另一實施例之沿著圖1 0的線 A-A的圖1 0的熱處理裝置的一部份的平面圖，其顯示來 自跨過一晶圓之主要及次要噴射器的孔口及至排氣口之氣 體流； 圖1 4係依據本發明的另一實施例之沿著圖丨〇的線 A-A的圖1〇的熱處理裝置的一部份的平面圖，其顯示來 自跨過一晶圓之主要及次要噴射器的孔口及至排氣口之氣 體流； 圖1 5係依據本發明的另一實施例之沿著圖1 0的線 A-A的圖1 0的熱處理裝置的一部份的平面圖，其顯示來 自跨過一晶圓之主要及次要噴射器的孔口及至排氣口之氣 體流； 圖1 6係依據本發明的實施例之具有替代的上升流噴 射器系統之熱處理裝置的橫截面圖； 圖1 7係依據本發明的實施例之具有替代的下降流噴 射器系統之熱處理裝置的橫截面圖； 圖1 8係顯示依據本發明的實施例之用來熱處理一批 晶圓的過程的實施例之流程圖，藉此，此批晶圓的每一晶 圓係快速且均勻加熱至想要溫度；及 圖1 9係顯示依據本發明的另一實施例之用來熱處理 一批晶圓的過程的實施例之流程圖，藉此，此批晶圓的每 一晶圓係快速且均勻加熱至想要溫度。 -32- (29) (29)200416773 【符號說明】 RTD 電阻溫度機制 τ/c 熱耦， BHU 晶舟操縱單元 HEPA 高效率顆粒空氣 WIW 晶圓內 RPM 轉/分 100 熱處理裝置 101 容器 102 處理室 104 支撐 106 晶舟 108 晶圓 110 絕緣塊 112 加熱元件 116-1、116-2 向上流注射器200416773 (1) Description of the invention [Technical field to which the invention belongs] The present invention relates to a system and method for heat-treating an object such as a substrate, and more particularly, the present invention relates to heat treatment, annealing, and deposition of material layers or Device and method for removing material layer from semiconductor wafer or substrate. [Prior art] Heat treatment devices are commonly used for the manufacture of integrated circuits (ICs) or semiconductor devices from semiconductor substrates or wafers. Heat treatment of semiconductor wafers includes heat treatment, annealing, diffusion or driving of a 'e.g.' dopant material, deposition or growth of a material layer, and etching or removal of a material from a substrate. These processes typically require the wafer to be heated to a temperature of 300 ° C to 130 ° C during processing and then 'and that one or more liquids, such as a processing gas or reagent, are delivered to the circle. Furthermore, these processes usually require that the wafer be kept at a uniform temperature throughout the entire process, regardless of changes in the temperature of the process gas or the rate at which the process gas is introduced into the processing chamber. __ A conventional heat treatment apparatus usually includes a large-capacity processing chamber positioned or surrounded by a furnace. The heat-treated substrate is sealed in a processing chamber, and the processing chamber is then heated by a furnace to a desired temperature for processing. For many processes, such as chemical vapor deposition (CVD), the sealed process chamber evaporates first, and once the process chamber has reached the desired temperature, a reaction or process gas is poured to form or deposit reagent pieces on the substrate. In the past, a heat treatment device, especially a vertical heat treatment device, needed to be provided with a protective heater adjacent to the side wall of the processing chamber above and below the processing belt of the processed product wafer. This configuration is undesirable because it requires a larger chamber capacity, which must be pumped to handle gas or steam filling and backwashing or washing, resulting in increased processing time. Furthermore, due to the poor sight factor of the crystal's round pitch heater, this architecture takes up a lot of space and power. Other problems with the conventional heat treatment apparatus include the considerable time required before warming the processing chamber and the temperature of the wafer to be processed, and the time required after the temperature is lowered. Furthermore, the additional time is often required to determine that the temperature of the processing chamber has stabilized to a desired temperature before processing can begin. Although the actual time required for wafer processing can be half an hour or less, pre- and post-processing times typically require 1 to 3 hours or more. Therefore, the time required to rapidly increase and / or decrease the temperature of the processing chamber to a uniform temperature significantly limits the throughput of conventional heat treatment equipment. The basic reason for the considerable temperature increase and decrease time is the heat capacity of the processing chamber and / or furnace in the conventional heat treatment device, which must be heated or cooled before the wafer can be effectively heated or cooled. A common way of minimizing or compensating the limitations of the throughput of conventional thermal processing equipment has been to increase the number of wafers that can be processed in a single cycle. By reducing the effective processing time of each wafer, simultaneous processing of a large number of wafers helps maximize the effective throughput of the device. However, this method also increases the risk if an error occurs during processing. That is, if a device or process failure occurs during a single processing cycle, a large number of wafers may be destroyed or destroyed due to the single failure. This is especially a concern for larger wafer sizes and more complex integrated circuits, where a single wafer may cost between 100 and 100 000, depending on the stage of processing. -6-(3) (3) 200416773 Another problem with this solution is that the size of the processing chamber is increased to accommodate a large number of wafers in order to increase the thermal capacity effect of the processing chamber, thus reducing the number of wafers that can be heated or cooled. rate. Furthermore, larger processing chambers that process larger batches of wafers cause or compromise a first-in-first-out problem, in which the wafer loaded first into the chamber also becomes the last wafer removed, causing these wafers to The rising temperature is in the longer period, and the uniformity of the entire wafer is reduced. Another problem with the above method is that for the simultaneous processing of a large number of wafers, the systems and devices used in many processes before and after the heat treatment cannot be remedied. Therefore, the heat treatment of a large number or a large number of wafers, while increasing the output of the heat treatment device, can hardly improve the overall output of the semiconductor manufacturing plant, and in fact, it may reduce the output by accumulating wafers before the heat treatment device, or other downstream System or device. An alternative to the conventional thermal processing apparatus described above is a rapid thermal processing (RTP) system, which has been developed for rapid thermal processing of wafers. Conventional RTP systems typically use high-intensity lamps to selectively heat a single wafer or a small number of wafers in a small and transparent processing chamber, usually quartz. The RTP system minimizes or eliminates the heat capacity effect of the processing chamber, and because the lamp has a very low heat capacity, the wafer may heat up and cool down quickly due to the lamp being turned on or off instantly. Unfortunately, conventional RTP systems have significant disadvantages, including the configuration of lamps, which in the past were configured in zones or columns each including several lamps adjoining the side wall of the processing chamber. This architecture is problematic because it takes up a lot of space due to its bad sight and power. In order to function effectively, the above is the extra cost in the final production process of the semiconductor processing equipment. (4) (4) 200416773 Another problem with the conventional RTP system is that it is impossible to provide uniform temperature distribution across multiple wafers in a single batch of wafers, and even on a single wafer. Several reasons for this non-uniform temperature distribution include (1) the poor line of sight of one or more wafers with one or more lamps, and (2) the change in output power from the lamps. Furthermore, a failure or change in the output of a single lamp may adversely affect the temperature distribution on the wafer. Because of the problem with this lamp system, the wafer is rotated to make sure that temperature inhomogeneities due to changes in lamp output are not transferred to the wafer for processing. However, the moving parts required to rotate the wafer, especially the feed-through rotation into the processing chamber, increase the cost and complexity of this system, and reduce its overall reliability. Another problem with RTP systems is maintaining a uniform temperature distribution across the outer and center edges of the wafer. Most conventional RTP systems do not have the proper mechanism to adjust this type of temperature heterogeneity. As a result, excessive temperature fluctuations occur on the surface of the wafer, which can cause slip separation in the wafer at high temperatures, unless a blackbody receiver is used, which is larger in diameter than the wafer. The conventional lamp-based RTP system has other disadvantages. For example, there is no appropriate mechanism to provide uniform power distribution and temperature uniformity over time, such as when the lamp is on or off, and unless phase angle control is used, it generates electrical noise. The repeatability of performance is also usually based on a lamp, because each lamp produces different performance as it ages. Replacing lamps is also costly and time consuming ', especially when considering a given lamp system, which may have 180 lamps. The availability of electricity is also costly, as this lamp system may require approximately 250 kilowatts of power consumption. (5) (5) 200416773 Therefore, there is a need for an apparatus and method for quickly and uniformly heating a batch of one or several substrates to a desired temperature across the surface of each substrate during thermal processing. SUMMARY OF THE INVENTION The present invention provides a solution to these and other problems, and provides other benefits beyond familiarity with this technique. The present invention provides an apparatus and method for isothermally heating a work piece such as a semiconductor substrate or a wafer, for performing a process such as annealing, diffusion, or driving of a doped material, deposition or growth of a material layer, and material from a wafer Etched or removed. A heat treatment apparatus is provided for processing a substrate held on a carrier at a local or elevated temperature. The device includes a processing chamber having a top wall, a side wall, and a bottom wall, and a heat source, which has a plurality of heating elements close to the top wall, the side wall, and the bottom wall of the processing chamber to provide an isothermal environment in a processing zone. In which, the carrier is positioned to heat treat the substrate. According to one form, the size of the processing chamber is selected to surround a capacity that is substantially not greater than the capacity required to accommodate the carrier, and the processing belt extends substantially throughout the processing chamber. Preferably, this processing chamber has a capacity to be selected to encompass substantially no more than 125% of the capacity required to contain the carrier. More specifically, the device further includes a pumping system that evacuates the processing chamber before the processing pressure and a washing system that returns the processing chamber after the processing is completed, and the size of the processing chamber is selected to provide rapid evaporation and return Alas. According to another aspect of the present invention, the bottom wall of the processing chamber includes a movable shaft seat having at least -9- (6) (6) 200416773 a heating element therein, and the 'movable shaft seat is used for lowering and raising so that The carrier is provided with a substrate inserted and removed from the processing chamber. In one embodiment, the device further includes a removable thermal shield for inserting between the heating element in the shaft seat and the substrate held on the carrier. The heat shield reflects the heat energy from the heating element in the shaft seat back to the shaft seat, and protects the substrate on the carrier from the heat energy from the heating element in the shaft seat. In a version of this embodiment, the device further includes a shutter, which is used to move above the carrier to isolate the processing chamber when the shaft seat is in the lower position. This device includes a pumping system to evacuate the processing chamber, and a shutter can be used to seal the processing chamber, thereby causing the pumping system to evacuate the processing chamber when the shaft seat is tied to the lower position. In another embodiment, the device further includes a magnetic auxiliary repositioning system 'which repositions the carrier during the heat treatment of the substrate. Preferably, the mechanical energy used to reposition the carrier is magnetically coupled to the carrier via a shaft seat, without the need to use a movable feedthrough to enter the processing chamber, and substantially without moving a heating element in the shaft seat. More preferably, the magnetic coupling repositioning system is a magnetic coupling rotation system, and the rotation carrier thereof is in the processing belt during the heat treatment of the substrate. According to another aspect of the present invention, the device further includes a gasket that separates the carrier from the top wall and the side wall of the processing chamber, and a distributed or cross-flow injector system for guiding a fluid flow across the holding carrier The surface of each of the substrates. A cross-flow syringe system generally includes a cross-flow syringe having a plurality of injector ports positioned relative to a substrate held on a carrier, and 'through this injector port, this liquid is directed to one side of the plurality of substrates -10- ( 7) (7) 200416773. Several discharge ports of the spacer positioned relative to the substrate held on the carrier cause this liquid to flow through the surface of the substrate. The liquid guided by the cross-flow injector system may include process, gas, or steam, as well as inert cleaning gas or steam used in cleaning or recirculating this chamber or the substrate used to cool it. [Embodiments] The present invention is directed to a device and method for processing a relatively small or small batch of one or more work pieces, such as a semiconductor substrate or wafer, which is held in a carrier, such as a crystal box or wafer boat. The invention provides reduced number of processing cycles and improved process consistency. As used herein, the term "small batch" means the number of wafers of less than several hundred wafers in a typical batch system, preferably in the range of 1 to about 53 semiconductor wafers or wafers In this range, 1 to 50 wafers are product wafers and the remaining wafers are non-product wafers used for monitoring purposes and as spacer wafers. Heat treatment refers to the process of heating a work piece or wafer to a desired temperature, which is usually in the range of about 350 ° C to 130 ° C. Heat treatment of semiconductor wafers may include, for example, heat treatment, annealing, diffusion or promotion of doped materials, deposition or growth of material layers, such as chemical vapor deposition, and etching or removal of materials from the wafer. A heat treatment apparatus according to an embodiment described with reference to FIG. 1 will now be described. For the sake of brevity, details of the heat treatment apparatus familiar to those skilled in the art will be omitted here. These details are described in more detail in, for example, commonly assigned USP 4770590, which is incorporated herein by reference. -11-(8) (8) 200416773 Fig. 1 is a cross-sectional view of an embodiment of a heat treatment apparatus for heat treating a batch of semiconductor wafers. As shown, the heat treatment apparatus 100 generally includes a container 101 surrounding a volume forming a processing chamber 102 having a support 104 for receiving a carrier or wafer boat 106, of which a batch of wafers 108 is held therein; and The heat source or furnace 110 has a plurality of heating elements 1121-1, 1121-2, and 1121-3 (hereinafter referred to as heating elements 112) for raising the temperature of the wafer to a desired temperature for heat treatment. The heat treatment device 100 further includes one or more optical or electrical temperature sensing elements such as a resistance temperature mechanism (RTD) or a thermocouple (T / C) to monitor the temperature in the processing chamber 102 and / or control the heating element 1 1 2 operations. In the illustrated embodiment, the temperature sensing element is a temperature distribution T / C1 14, which has a plurality of independent temperature sensing nodes or points (not shown) for detecting temperatures at multiple locations in the processing chamber 102. The heat treatment apparatus 100 may also include one or more ejectors 1 1 6 (only one is shown) for introducing a fluid such as a gas or steam into the processing chamber 102 for processing and / or cooling the wafer 108, and one or more More cleaning ports or through holes 1 1 8 (only one shown) for introducing gas to clean the processing chamber and / or cool the wafer. The gasket 1 2 0 increases the concentration of the processing gas or vapor close to the wafer 008 in the area or the processing zone 1 2 8 of the processed wafer, and reduces the wafer from peeling off or contamination by peeling off the deposit. This deposition Objects may be formed on the inner surface of the processing chamber 102. The process gas or vapor leaves the processing zone through an exhaust port or tank 1 2 1 in the chamber liner 1 2 0. Some other structures, manufacturing techniques and materials suitable for the syringe 1 1 6 are described in more detail in the case entitled "Apparatus and Method f〇r Backfilling a Semiconductor Wafer Process Chamber" -12- (9) (9) 200416773 The assigned PCT patent application is incorporated herein by reference. Generally, the container 101 is sealed to the platform or the base plate 124 by a seal such as an O-ring 122 to form a processing chamber 102. The processing chamber 102 completely closes the wafer 108. The dimensions of the processing chamber 102 and the base plate 124 during heat treatment The system was selected to provide rapid evaporation, rapid heating, and rapid recovery of the processing chamber. Advantageously, the container 101 and the base plate 1 24 are customized to provide a processing chamber 102 of a size selected to close a volume that is substantially not greater than 0 to accommodate a wafer having a wafer held therein 108. Demand for carrier 丨 06. Preferably, the container 101 and the base plate 1 24 are customized to provide a processing having a size of about 125 to 150% required for a carrier having a wafer i 08 held therein. The chamber 102, more preferably, the processing chamber has a size not larger than about 125% of the volume required to accommodate the carrier and wafers, in order to minimize the volume of air pumping and recirculation required for assistance. The opening of the injector 16, the T / C1 14, and the through hole 1 18 are sealed using seals such as O-rings, VCR®, or CF® installations. The gas or steam released or introduced during processing is evaporated through the duct or exhaust port 126 before the ventilation system 1 2 7 formed in the wall or base plate 1 2 4 of the processing chamber 10 (not shown), as shown in the figure. 1 is shown. The processing chamber 102 can be maintained at atmospheric pressure during the heat treatment, or evaporated to a vacuum as low as 5 mTorr via a pumping system (not shown). The pumping includes one or more roughing pumps, blowers, high vacuum pumps and Roughing, throttling and front pipe valves. In another embodiment shown in FIG. 2, the base plate! 2 4 also includes a solid annular flow channel 1 2 9 for receiving and supporting the ejector including the ring 1 3 1-13- (10) (10) 200416773 1 1 6 and the ejector 1 1 6 depends on several vertical jets Tube or injector π 6 A. The injector 1 1 6 A can be customized and shaped to provide an up-flow, down-flow or cross-flow flow pattern, as described below. The ring 1 3 1 and the ejector 1 1 6 A are arranged so that the gas is injected into the processing chamber 10 2 between the wafer boat 106 and the container 101. In addition, the ejectors 1 1 6 A are spaced around the ring 1 3 1 so that the processing gas or steam is evenly introduced into the processing chamber 10 2 and, if necessary, can be used for cleaning or backwashing. The scrub gas is introduced into the processing chamber. The base plate 124 is a short cylindrical shape having an upper flange 1 3 3, a side wall 1 3 5 extending outward, and a base 1 3 7 extending inwardly. The upper flange 1 3 3 is used to receive and support the container 101, and includes an O-ring 1 22 to seal the container to the upper flange. The base 1 3 7 is used to receive and support the gasket 1 2 0 on the outer side of the ring 1 3 1 of the supported injector 1 1 6. Furthermore, the base plate 1 24 shown in FIG. 2 is combined with various ports, which include return / wash gas inlet ports 139, 143, cooling ports 145, 147 for circulating cooling fluid in the base plate 124, and monitoring ports. The pressure monitoring port 149 of the pressure in the processing chamber 102. The process gas inlets 151, 161 direct a gas from a supply source (not shown) to the ejector 1 1 6. The return / cleaning gas inlets 1 3 9 and 1 4 3 are provided on the side wall 1 2 5 of the base plate 1 2 4 and mainly introduce a gas from the ventilation / cleaning gas supply (not shown) into the through hole 1 1 8. A mass flow controller (not shown) or any other suitable flow controller is arranged in rows between the gas supply and the ports 1 3 9, 1, 43, 1 5 1 and 1 6 1 to control the flow of gas into the processing chamber. 1 02. Container 1 〇1 and gasket 1 20 can be made of any metal, ceramic, crystal or glass material, this material can withstand the heat of high temperature and high vacuum operation and -14- (11) (11) 200416773 mechanical resistance, and resist Erosion from glass and steam used or released during processing. Preferably, the container 1 0 1. And gasket 120 is made of opaque, translucent or transparent quartz glass with a sufficient thickness to withstand mechanical stress and resist deposition of by-products from the process, thereby reducing potential pollution of the processing environment. More preferably, the container 101 and the spacer 120 are made of quartz, and the quartz reduces or eliminates heat transfer from the area 108 or the processing belt 1 28 of the processed wafer. This batch of wafers 108 is introduced into the heat treatment apparatus 100 through a loading gate or a loading port (not shown), and then enters the processing chamber 102 through an inlet or an opening in the processing chamber or the base plate 124. Sealed tightly. In the structure shown in FIG. 1, the processing chamber 1 02 is a vertical reactor, and this entrance uses a movable shaft seat 130, which is raised during processing and has a shape such as 0. The ring 1 3 2 is hermetically sealed on the base plate 1 2 4 and is lowered to allow an operator such as a boat handling unit (b Hu) (not shown) or an automated control system to position the carrier or boat 1 0 6 At the support 104 attached to this shaft seat. The heating element 11 2 includes a top 1 3 4 (element 1 1 2-3) side 1 3 6 (element 1 1 2-2) and a bottom 1 3 8 (element 1 1 2 -1) positioned close to the processing chamber 1 〇2. ) Components. Effectively, the heating element 1 12 surrounds the wafer to achieve a good viewing element of the wafer, so an isothermally controlled volume or processing strip 1 2 8 is provided in the processing chamber of the processed wafer 108. The heating element 1 1 2-1 which is close to the bottom portion 1 38 of the processing chamber 1 02 can be arranged in or on the shaft seat 130. If desired, additional heating elements can be arranged in or on the base plate 1 2 4 to replenish heat from the self-heating elements 1 1 2 -1. -15- (12) (12) 200416773 In the embodiment shown in FIG. 1, the heating element 112-1 near the bottom of the processing chamber is preferably recessed into the movable shaft seat 130. The shaft seat 130 is made of a thermal and electronic insulating material or an insulating block 1 40, which has a resistance heating element 112-1 inserted into or attached thereto. Shaft base 130 additionally includes one or more feedback sensors or T / C 1 1 4 used to control heating elements 1 1 2-1. In the architecture shown, T / C 1 4 1 is inserted into the center of the insulating block 1 4 0. The side heating element 112-2 and the upper heating element 112-3 may be arranged in or on the insulating block 110 near the container 101. Preferably, the side heating element 112-2 and the upper heating element 112-3 are recessed in the insulating block 110. The heating element 1 12 and the insulating blocks 1 10 and 140 can be constructed in any manner, and can be manufactured in any manner and with any material. Some suitable architectures, manufacturing techniques, and materials are familiar with this technique, and others are described in the PCT patent application named "Variable Heater Element For Low To High Temperature Ranges". This case is related to our firm. Case number FP-71795-PC was filed on the same day and is incorporated herein by reference. Preferably, in order to obtain a desired processing temperature as high as 115 ° C, the heating element 112-1 near the bottom 138 of the processing chamber 102 has a temperature of about 0.1. Maximum power output from lkW to 10kW, and a maximum processing temperature of at least 1150 ° C. In particular, these lower heating elements 1 1 2 -1 have a power output of at least about 3 · 8 k W, and a maximum processing temperature of at least 95 ° C. In one embodiment, the side heating element 1 1 2-2 is functionally divided into a plurality of belts, which includes a lower belt and an upper belt closest to the shaft seat 1 3 0, and each belt can be from the upper heating element 1 1 2-3 and The lower heating elements 1 1 2 -1 operate independently of each other at different power levels -16- (13) (13) 200416773 level and duty cycle. The heating element 1 1 2 is controlled in any suitable manner. The others are described in the PCT patent application named "Feed Forward Temperature Co. troller", which is related to our case number FP-71754- The PC filed an application on the same day and is incorporated herein by reference. If it is not removed, the pollution from the insulating block 1 40 and the lower heating element 1 1 2 -1 is reduced by accommodating the heating element and the insulating block in an inverted quartz crucible 4 2 'Quartz crucible 1 42 as a heating element and A barrier between the insulating block and the processing chamber 0 102. The crucible 142 is also sealed against the loading port and the BHU environment to further reduce or remove pollution from the processing environment. In general, the interior of the crucible 142 is at a standard atmospheric pressure, so that the crucible 42 should be strong enough to withstand the pressure difference between the processing chamber 102 and the shaft seat 130 in the entire crucible 142 at atmospheric pressure. When the wafer 108 is loaded or unloaded, that is, the shaft seat 30 is located in the lowered position (Figure 3), and the lower heating element n 2 -1 is activated to maintain a no-load below the desired processing temperature. temperature. For example, for a process with a desired heating temperature of a heating element of 950 ° C, the no-load temperature may be 50 to 150 degrees. The no-load temperature can be set higher for a specific process, such as a process with a high desired processing temperature and / or a high desired heating rate, or reduced thermal cycling efficiency on the lower heating element 1 1 2-1, Therefore, the component life is extended. In order to further reduce the pretreatment time, this time is the time required to prepare a heat treatment device for processing 100, and lower the heating element; [丨 2 -1 can be heated to the desired process temperature or below when pushing or loading, That is, when the wafer boat 106 having the wafer-17- (14) (14) 200416773 108 is positioned on the shaft seat 130 is rising. However, in order to minimize the thermal stress on the components of the wafer 108 and the heat treatment device 100, it is preferable to arrange the proximity processing chambers respectively at the heating elements 1 · 1 · 2-3 and 1 1 2-2 At the same time as the top portion 1 3 4 of the 0 2 and the side portion 1 3 6, the lower heating element 1 1 2 -1 is brought to the desired process temperature. Therefore, for certain processes, such as those that require a high desired process temperature, the temperature of the lower heating element 1 12-1 may rise before the shaft seat 130 rises, and the last one in the batch at the same time Wafer 108 is being loaded. Similarly, it will be appreciated that after processing and during the pulling or unloading cycle, that is, when the shaft seat 1 2 8 is descending, the power to the lower heating element U 2-1 can be reduced or completely removed so that the shaft The seat 130 is cooled to the no-load temperature 'in the preparation for cooling the wafer 108 and the unloading by the BHU. The auxiliary seat cooling 130 is used for auxiliary cooling before the conventional pushing or unloading cycle. The purging line or an inert purging, such as nitrogen, is installed via the insulating block 1 40. Preferably, the nitrogen gas is injected through the channel 1 44 through the center of the insulating block 40, and is allowed to flow between the upper part of the insulating block 1 40 and the interior of the iff ^ 1 42 to its surroundings. The hot nitrogen is then passed through a high efficiency pellet (HEPA) filter (not shown) or to the factory exhaust system (not shown). This center-injection architecture facilitates faster cold valleys at the center of the wafer 108, and therefore ideally minimizes the center / edge difference of the bottom wafer of the wafer. This may result in different ways due to the crystal lattice Damage to the sliding dislocation of the structure. As mentioned above, in order to increase or extend the life of the lower heating element 1 1 2-1, -18- (15) (15) 200416773 can be set higher and closer to the desired processing temperature to reduce the effect of thermal cycling. Furthermore, it is also desirable to periodically bake the heating element 1 1 2-1 in an oxygen-enriched environment to facilitate the formation of a protective oxidized surface coating. For example, in the case of a heat-resistant element formed of an aluminum-containing alloy such as Kanthal®, the baking heating element 2-1 is grown in an oxygen-enriched environment into an alumina oxide surface. Therefore, the insulating block 140 may further include an oxygen line (not shown) to facilitate the formation of a protective oxidized surface coating layer during the baking of the heating element 1 2-1. Alternatively, the oxygen for baking may be introduced through a rinsing line used during processing to supply cooling nitrogen through a three-way valve. Fig. 3 is a cross-sectional view of a part of a heat treatment apparatus 100. Fig. 3 shows the heat treatment device 100 when the wafer 108 is being loaded or unloaded, that is, the shaft seat 130 is in a lower position. In this mode of operation, the heat treatment apparatus 100 further includes a thermal shield 146, which can be rotated or slid into the shaft seat] 30 and the lower wafer 108 in the wafer boat 106. In order to improve the performance of the thermal shielding 1 4 6, the thermal shielding is usually reflected on the side facing the heating element n 2 _ ′ and absorbed on the side facing the wafer 108. The purpose of falling down to the wafer boat 106 is to increase the cooling rate of the wafer 108 falling to the wafer boat 106, and to help maintain the no-load temperature of the shaft seat 130 and the lower heating element 1 12-1, This reduces the time required to increase the temperature in the processing chamber 102 to the desired processing temperature. An embodiment of a heat treatment apparatus having a heat shield will now be described in more detail with reference to Figs. Fig. 3 also shows an embodiment of a heat treatment apparatus 100 having a shaft seat heating element 112-1 and a heat shield 146. In the embodiment shown here, the thermal shield -19- (16) (16) 200416773 146 is attached to the rotatable shaft 150 via the arm M8, and the rotatable shaft 150 is actuated by an electric, pneumatic or hydraulic The device is turned to turn the heat shield 1 4 6 into the heated shaft seat 丨 3 〇 and the crystal boat! The lowest wafer in 〇 丨 the first position between 〇 08 is during the pull or unload cycle, and the bottom of the wafer boat 〇 06 is just before entering the chamber 102 and removed or rotated until it is not in the shaft seat and the crystal The second position between the circles is during at least one last part or end of the push or load cycle. Preferably, the rotatable shaft 150 is mounted on or attached to a machine (not shown) used for raising and lowering the shaft seat 130, so when the processing chamber 102 is removed from the top of the shaft seat, The heat shield 46 is rotated into position. Positioning the heat shield 146 during the load cycle enables the heating element ιυ ″ to be heated to a desired temperature, which is faster than otherwise. Similarly, during the unloading cycle, the thermal shielding 1 4 6 by reflecting the heat radiated from the shaft seat heating element η 2 helps to cool the wafer, especially the wafer closer to the shaft seat. Alternatively, the rotatable shaft 150 can be mounted on or attached to another part of the heat treatment device 100, and it is adapted to move axially synchronously with the shaft seat 130, or 'only when the shaft seat is completely When descending, turn the heat shield 1 4 6 into position. FIG. 4 is a schematic diagram of the shaft seat heating element of FIG. 3] 1 2-1, which illustrates the reflection of thermal energy or heat radiation from the lower heating element back to the shaft seat 130, and from a batch or stack of wafers The absorption of thermal energy or thermal radiation of the lower wafer 108. It has been determined that the desired characteristics, high reflectivity and high absorbency can be obtained using several different materials, such as metal, ceramic, glass or polymer coatings, or combinations thereof. By way of example, the following table lists various suitable materials and corresponding parameters. -20- 200416773 (17) Table 1 Material Absorptive Reflective Stainless steel 0. 2 0. 8 Opaque quartz 0. 5 0. 5 Polished β Lu 0. 03 0. 97 Silicon Carbide 0. 9 0. 1 According to one embodiment, the heat shield 1 46 may be made from a single material such as carbide (SiC), opaque quartz, or stainless steel, which has been polished on one side and worn, honed, or roughened on the other . Roughing the surface of the heat shield 1 4 6 can significantly change its heat transfer characteristics, especially its reflectivity. In another embodiment, the heat shield 1 4 6 can be made of two different materials. FIG. 5 is a schematic diagram of a heat shield 146, which has an upper layer 1 5 2 of a material such as siC or opaque quartz, has high absorptivity, and a lower layer of a metal or material such as polished stainless steel or polished inscription. 5 4 has high reflectivity . Although, as shown with approximately equal thickness, it will be appreciated that due to the difference in thermal expansion coefficients, depending on the conditions of thermal shielding 1 4 6 such as minimizing thermal stress between layers, the upper layer 152 or the lower layer 154 may have a relative Greater thickness. For example, in some embodiments, the lower layer 5 4 may be a very thin layer or film of polished metal that is deposited, formed, or plated on a quartz plate, which forms the upper layer 15 2. Such materials may be integrally formed or interlocked or knotted by a conventional mechanism such as a joint or fastener. In another embodiment, the thermal shield 1 4 6 further includes an internal cooling channel -21. (18) (18) 200416773 156, which further insulates the wafer 108 from the lower heating element 112-1. In a version of this embodiment, as shown in FIG. 6, the internal cooling channel 156 is formed between two different material layers 152 and 154. For example, the internal cooling channels 156 may be formed on the highly absorbent opaque quartz layer 152 by a milling machine or any other suitable technique, and covered by a metal layer 154 or a coating such as a tin or aluminum coating. Alternatively, the internal cooling channel 156 may be formed in the metal layer H4 or both the metal layer 154 and the quartz layer 152. FIG. 7 is a perspective view of an embodiment of the thermal shielding assembly 153, which includes a thermal shielding 146, an arm 148, a rotatable shaft 1500, and an actuator 155. As shown in FIG. 8, the heat treatment device 100 further includes a shutter 1 58, which can be rotated or slid or otherwise moved into and positioned above the wafer boat 1.06. When the shaft seat 1 30 is located completely In the lowered position, the processing chamber 102 is isolated from the outside or the loading port environment. For example, when the pedestal 130 is in a lowered position, the shutter 15 8 can be slid into position above the wafer boat 106 and raised to isolate the processing chamber 102. Alternatively, when the pedestal 130 is in a lowered position, the shutter 15 8 can be rotated or swung into position above the wafer boat 106 and then raised to isolate the processing chamber 102. Optionally, the shutter 15 8 can be rotated around or relative to the bolt or rod. When swinging in and positioned above the wafer boat 106, the shutter is raised at the same time to isolate the processing chamber 102. The processing chamber 102 for normal operation under vacuum, such as in a CVD system, a shutter 15 8 may be placed next to the base plate 12 to form a vacuum seal, so that the processing chamber 102 is pumped to a processing pressure or vacuum. For example, 'may want to pump processing chamber 102 between successive batches of wafers to reduce or eliminate the possibility of contaminating the process environment. The formation of a vacuum seal is preferably accomplished with a large diameter seal such as a 0-22- (19) (19) 200416773 ring, and therefore, the shutter 1 58 may desirably include several water channels cooling the seal. 1 6 0. In the embodiment shown in Fig. 8, when the shaft seat 130 is in the raised position, the shutter 15 8 is sealed with the same O-ring 1 32 used to seal the crucible 1 42. The heat treatment device 130 for the normal operation of the processing chamber 102 at atmospheric pressure, and the shutter 15 8 is simply an insulating plug, which is designed to reduce heat loss from the bottom of the processing chamber. One embodiment to accomplish the above-mentioned purpose involves the use of an opaque quartz plate, which may or may not additionally include several cooling channels located below or inside it. When the pedestal 130 is in the fully lowered position, the ram 15 8 is moved in and positioned below the processing chamber 102 and then isolated by being raised by one or more electrical, hydraulic or pneumatic actuators (not shown). Processing room. Preferably, the actuator is a pneumatic actuator using about 15 to 60 (PSIG) air, and this actuator is generally available on a heat treatment device 1000 for operation of a pneumatic valve. For example, in the version of this embodiment, the shutter 1 58 may include a plate having a plurality of wheels, which are attached to both sides by short-closed arms or cantilevers of the wheels. During operation, this plate or shutter plate 1 5 8 rolls into the processing chamber 10 02 positioned on two parallel guide rails. Stop on the guide rail and then pivot the cantilever to convert the movement of the shutter 15 8 into an upward direction to seal the processing chamber 102. As shown in FIG. 9, the heat treatment device 100 further includes a magnetically coupled wafer rotation system 16 2. During processing, the magnetically coupled wafer rotation system 16 2 rotates to support 1.04 and the wafer boat 106 and supports it. On the wafer 1 0 8. The rotating wafer 1 08 improves the uniformity in the wafer (WIW) by averaging any non-uniformities in the heating element 1 12 and the process gas flow to produce a uniform (20) (20) 200416773 Uniform wafer temperature and special reaction temperature distribution. Generally, the wafer rotation system 16 is capable of rotating the wafer 108 at about 0. Speeds from 1 to 10 revolutions per minute (RP M). The wafer rotation system 1 6 2 includes a drive assembly or a rotating machine 1 6 4 having a rotary motor 1 66 such as an electric or pneumatic motor, and a magnet 1 housed in a chemical-resistant container such as annealed polytetrafluoroethylene or stainless steel. 6 8. The steel ring 1 70 directly below the insulating block 1 40 of the shaft seat 1 40 and the driving shaft 1 72 having the insulating block transfer the rotational energy to another magnet 174 placed on the insulating block of the upper part of the shaft seat . The steel ring 170, the drive shaft 172, and the second magnet 1 74 are also filled with a chemical-resistant container compound. A magnet 174 disposed on the side of the shaft seat 30 is magnetically coupled with a steel ring or a magnet 176 via the crucible 142, and the magnet 176 is inserted into or attached to the support 104 in the processing chamber 102. Magnetically coupling the rotating machine 1 64 via the shaft seat 130 removes the need to place it in a processing environment or have a mechanical feedthrough, thus eliminating potential sources of leakage and contamination. Furthermore, the configuration of the rotating machine 1 64 on the outside and at some distance from the processing minimizes the maximum temperature of the exposure, thereby increasing the reliability and operating life of the wafer rotating system 1 62. In addition to the above, the wafer rotation system 16 may further include one or more sensors (not shown) to determine the proper position of the wafer boat 106 and the appropriate magnetic coupling to the steel ring in the processing chamber 102. Or between magnet 1 7 6 and magnet 1 74 in the shaft seat 1 30. Sensors that determine the relative position of the wafer boat 106 or wafer boat position confirmation sensor are particularly effective. In one embodiment, the boat position confirmation sensor includes a sensor protrusion (not shown) on the boat 106, and an optical or laser sensor is disposed under the base plate 124. Operation -24- (21) (21) 200416773 Operation time ′ After the wafer 108 has been processed, the shaft seat will be about 3 inches below the base plate 1 24. Here, the wafer rotation system 1 62 is instructed to rotate the wafer boat 106 until the wafer boat sensor convex portion can be seen. The wafer rotation system 16 is then operated to calibrate the wafer boat so that the wafer 8 can be unloaded. After this operation is completed, the wafer boat is lowered to the load / unload height. After the initial inspection, 'only # is enough to self-mark the sensor to confirm the wafer position. As shown in FIG. 10, the 'improved ejector 2 1 6 is preferably used for a heat treatment device 100. Ejector 2 1 6 is a distributed or cross (X) flow ejector 2 1 6-1, where the process gas or vapor is guided on the wafer 1 08 and the wafer boat 1 through the ejector opening or orifice 1 8 0 06 on one side, and in a laminar flow caused to flow through the surface of the wafer leaving the discharge port or slot 182 in the chamber tube 12 on the opposite side. The wafer uniformity within a batch of 108 is improved by providing an improved distribution of process gas or steam on an earlier J1 flow or downflow structure 'X-flow ejector 116-1. Therefore, the X-flow ejector 2 1 6 can be used for other purposes, including the injection of cooling gases (eg, helium 'nitrogen, hydrogen) for forced convection cooling between wafers 108. The use of X-flow injectors 2 1 6 results in more uneven cooling of wafers 108, regardless of whether they are stacked or batched down or up, and, compared to earlier upflow or downflow architectures, These wafers are arranged in the middle. Preferably, the orifice 1 180 of the ejector 2 1 6 is customized, shaped and positioned to provide a spray pattern 'This spray pattern promotes forced convective cooling between the wafers 108, so no cross crystal Large round temperature slope. FIG. 11 is a cross-sectional side view of a part of the heat treatment device 100 of FIG. 10, showing the syringe orifice 180 associated with the chamber liner 120 and the wafer-25- (22) (22) 200416773 1 The commentary part of the discharge tank 1 82 related to 08. Fig. 12 is a plan view of a portion of the heat treatment apparatus 100 along the line A-A of Fig. 10, which shows the orifices 1 8 0 from the primary and secondary syringes 1 8 4 ··, U 6 The laminar air flow of -1, 1 0 0-2 crosses one of the wafers 008 and goes to the discharge grooves 1 8 2 -1 and 1 8 2-2 according to an embodiment. It should be noted that the position of the discharge groove 18 2 shown in FIG. 10 has been displaced from this position of the discharge grooves 182-1 and 182-2 shown in FIG. 12 to allow the discharge groove and the ejector 1 to be explained. 1 6 -1 in a single cross-sectional view of the heat treatment apparatus. It should also be noted that the dimensions of the syringes 184, 186 and the discharge grooves 182-1 and 182-2 relative to the wafer 108 and the chamber liner 120 have been enlarged to more clearly illustrate the passage from the syringe to the discharge groove. Gas flow. As also shown in FIG. 12, the processing gas or steam is first separated from the wafer 108 and guided to the gasket 120, so that the processing gas or steam is mixed before reaching the wafer. The structures of orifices 180-1 and 180-2 are particularly effective for use in manufacturing processes or processes, where different reactants are drawn from each of the primary and secondary injectors 184, 186 to form a multi-component film or layer. FIG. 13 is another plan view of a portion of the heat treatment apparatus 100 along the line AA of FIG. 10, showing an alternative gas flow path from the orifices 1 8 0 of the primary and secondary syringes 184, 1 86, across Go through one of the wafers 108 and go to the discharge slot 1 82 according to another embodiment. FIG. 14 is another plan view of a portion of the heat treatment apparatus 100 along the line AA of FIG. 10, showing an alternative gas flow path from the orifices 1 8 0 of the primary and secondary injectors 184, 1 86, across Go through one of the wafers 108 and go to the discharge tank 1 82 ° -26- (23) (23) 200416773 according to another embodiment. Figure 15 is a heat treatment device 1 along the line AA of Figure 10 Another plan view of part 〇 showing alternative gas flow paths from orifices 18 and 18 of primary and secondary injectors 184, 18, across one of wafer 108's interpretations, and according to another Exhaust tank 1 8 2 of the embodiment. Figure 16 is a cross-sectional view of a 16-series heat treatment apparatus 100 having two or more up-flow injectors 1 16-1, 1 16-2 according to an alternative embodiment. In this embodiment, the processing gas or steam entering from the processing injectors 116-1 and 116-2 with respective outlet holes in the lower part of the processing chamber 10 upwards and across the wafer 108, and the consumption gas leaves the pad The discharge groove 1 8 2 in the upper part of the sheet 120. An up-flow syringe is also shown in FIG. Fig. 17 is a cross-sectional view of a heat treatment device 100 having a downflow syringe system according to an alternative embodiment. In this embodiment, the processing gas or steam entering the processing chamber 10 from the processing injectors 1 16-1 and 1 1 6-2 having the respective orifices in a high position, downward and across the wafer 108, and The exhaust gas leaves the exhaust groove 182 in the lower portion of the gasket 120. Advantageously, the syringes 116, 2 16 and / or the gaskets 120 can be quickly and easily replaced or exchanged with other syringes and gaskets, which have different positions for injection and discharge from the processing belt 128. Those skilled in the art will appreciate that the embodiment of the X-flow ejector 2 16 shown in FIG. 10 adds a degree of process flexibility by enabling the flow pattern in the processing chamber 10 Quickly and easily change from the cross-flow architecture shown in FIG. 10 to the up-flow architecture shown in FIGS. I and 16 or the down-flow architecture shown in FIG. 17. This can be achieved with the easy-to-install syringe combination 2 1 6 and gasket 1 20, and the process geometry can be switched from cross-flow to up-flow or down-flow. -27- (24) (24) 200416773 The injector 1 1 6, 2 1 6 and the gasket 丨 20 may be separate components, or the syringe may be integrally formed with the gasket as a single piece. The latter embodiment is particularly effective for applications that want to frequently change the architecture of the processing chamber 102. An explanation method or process for operating the heat treatment apparatus 100 will be described with reference to FIG. 18. Fig. 18 is a flow chart showing the steps of a method for heat treating a batch of wafers 108, wherein each wafer of the batch of wafers is rapidly and uniformly heated to a desired temperature. In this method, the shaft seat 1 3 0 is lowered, and the heat shield 146 moves into position, but the shaft seat 130 is lowered by the heat reflection from the lower heating element 1 1 2 -1 back to the shaft seat 1 3 0. Temperature and insulation of the finished wafer 108 (step 190). Optionally, the shutter 1 58 is moved into position to seal or isolate the processing chamber 1 02 (step 192), and power is applied to the heating elements 1 12-2, 1 12-3 to preheat the processing chamber 1 〇2 to or maintain an intermediate or no-load temperature (step 194). The carrier or wafer boat 106 containing the new wafer 108 is positioned on the shaft seat 130 (step 196). The shaft seat 1 3 0 is raised to position the wafer boat on the processing belt 128, but at the same time, the shutter 158 and the heat shield 146 are removed, and the heating element 1 1 2 _ 1 is heated under the temperature to preheat the wafer to an intermediate temperature (step 197). ). Preferably, the thermal shield 1 4 6 is removed before the wafer boat 106 is positioned on the processing belt 128. A flow system, such as a process gas or steam, is directed on one side of the wafer 108 via several injector ports 180 (step 198). This fluid flows from the injector port 180 across the surface of the wafer 108 to the discharge slot 182, which is positioned on the gasket 120 on the opposite side of the wafer from the injector port (step 199). Optionally, the wafer boat 106 can be rotated in the processing belt 1 2 8 during the heat treatment of this batch of wafers 108 to further enhance the uniformity of the heat treatment -28- (25) (25) 200416773 Mechanical energy is magnetically coupled to the carrier or wafer boat 106 via a shaft seat 130, which is repositioned during wafer processing (step 200). A method and processing of the heat treatment apparatus 100 according to another embodiment will now be described with reference to Figs. Fig. 19 shows steps of an embodiment of a method for heat treating a batch of wafers 108 in a carrier. In this method, the apparatus 100 is provided with a processing chamber 102 whose size and capacity are substantially not larger than those required to accommodate the carrier 106 with the wafer 108 held therein (without a guard heater). The shaft seat 130 is lowered, and the wafer boat 106 held by the wafer 108 is positioned thereon (step 202). The shaft seat 130 is raised to be inserted into the wafer boat in the processing chamber 102, but at the same time, the wafer 108 is preheated to an intermediate temperature (step 204). Power is applied to the heating elements 1 12-1, 1 12-2, 1 12-3, and each heating element is disposed close to at least one of the top 1 3 4, side 1 3 6 and bottom 1 3 8 of the processing chamber 102. To heat the processing chamber (step 206). Optionally, the power system of at least one of the heating elements is independently adjusted to provide a substantially isothermal environment at a desired temperature in the processing zone 1 2 in the processing zone 1 2 8 (step 2 0 8 ). When the wafer 108 has been thermally processed while maintaining a desired temperature on the processing belt 1 2 8, the shaft seat 130 is lowered and the heat shield 1 4 6 is moved into position to insulate the processed wafer! 〇 8 and reflect the heat from the lower heating element 1 12-1 back to the shaft seat 130 to maintain its temperature (step 2 1 0). And, optionally, the shutter 15 8 is moved into position to seal or isolate the processing chamber 1 02 and the electric power applied to the heating element 1 1 2-2, 1 1 2-3 while maintaining the temperature of the processing chamber (step 2 1 2). The wafer boat 1 06 is then removed from the shaft seat 1 3 G (step 2 1 4), and another wafer boat containing a new batch of wafers to be processed at -29- (26) (26) 200416773 is positioned. On the shaft seat (step 216). The shutter 158 is repositioned or removed (step 218), and the thermal shield is withdrawn or repositioned to preheat the wafer 108 in the wafer boat 106 to an intermediate temperature, but at the same time raise the shaft seat 130 to The wafer boat is inserted into the processing chamber 102 to heat-treat the new batch of wafers (step 220). It has been confirmed that the heat treatment device 1000 provided and operated as described above reduces processing or recycling by about 75% compared to the conventional system. For example, a conventional high-volume heat treatment device can process 1000 product wafers in about 232 minutes, which includes pre-processing and post-processing time. The heat treatment apparatus 100 of the present invention performs the same process on a small batch of 25 product wafers 108 in about 58 minutes. The foregoing descriptions of specific embodiments and examples of the present invention have been presented for the purposes of illustration and description, and although the present invention has been illustrated by some previous examples, it should not be construed as limiting. Such examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Many modifications, improvements, and variations are possible within the scope of the invention in light of the above teachings. It is contemplated that the scope of the present invention encompasses the general areas described above, as well as those defined in the scope of patent applications and their equivalents. [Brief description of the drawings] After reading the following detailed description, the drawings provided below, and the scope of patent application, these and various other features and advantages of the present invention will become apparent. 'Among them, Fig. 1 is an embodiment of the present invention. A cross-sectional view of a heat treatment device having an isothermal control capacity using a conventional upwelling structure; -30- (27) (27) 200416773 Fig. 2 shows the base plate used in the heat treatment device shown in Fig. 1 Perspective view of an alternative embodiment; Figure I 3 is a cross-sectional view of a portion of a heat treatment device with a shaft heater and a heat shield according to an embodiment of the present invention; Figure 4 is a diagram of an embodiment according to the present invention 3 is a schematic diagram of a shaft heater and a heat shield; Η 5 is a schematic diagram of an embodiment of a heat shield according to the present invention, which has an upper layer of a highly absorbent material and a lower layer of a highly reflective material; FIG. 6 FIG. 7 is a perspective view of another embodiment of a heat shield with a cooling channel according to the present invention; FIG. 7 is a perspective view of an embodiment of a heat shield and an actuator according to the present invention; real An example is a cross-sectional view of a part of a heat treatment device having a shutter; W 9 is a cross-sectional view of a processing chamber having a shaft heater and a magnetically coupled wafer rotation system according to an embodiment of the present invention; FIG. 10 FIG. 11 is a cross-sectional side view of a part of the heat treatment apparatus of FIG. 10 according to the embodiment of the present invention. It shows the position of the injector orifice relative to the gasket and the exhaust groove relative to the wafer. FIG. 12 is a part of the heat treatment apparatus of FIG. 10 along line aA of FIG. 10 according to an embodiment of the present invention. -31-(28) (28) 200416773 flow from the orifices of the primary and secondary ejectors across the wafer and to the exhaust port; Figure 1 3 is another according to the present invention Example of a plan view of a portion of the thermal processing apparatus of FIG. 10 along line AA of FIG. 10, showing gas flow from the orifices of the primary and secondary injectors across a wafer and to the exhaust port Figure 14 is a diagram along another figure according to another embodiment of the present invention; AA is a plan view of a portion of the heat treatment apparatus of FIG. 10, showing gas flows from the orifices and exhaust ports of the primary and secondary injectors across a wafer; FIG. A plan view of a portion of the thermal processing apparatus of FIG. 10, taken along line AA of FIG. 10, according to an embodiment, showing the gas from the orifices of the primary and secondary injectors across a wafer and to the exhaust port Fig. 16 is a cross-sectional view of a heat treatment device with an alternative upflow ejector system according to an embodiment of the present invention; Fig. 17 is a heat treatment with an alternative downflow ejector system according to an embodiment of the present invention A cross-sectional view of the device; FIG. 18 is a flowchart showing an embodiment of a process for heat treating a batch of wafers according to an embodiment of the present invention, whereby each wafer of the batch of wafers is fast and uniform Heating to a desired temperature; and FIG. 19 is a flowchart showing an embodiment of a process for heat treating a batch of wafers according to another embodiment of the present invention, whereby each wafer of the batch Heat quickly and evenly to the desired temperature. -32- (29) (29) 200416773 [Explanation of Symbols] RTD Resistance Temperature Mechanism τ / c Thermocouple, BHU Wafer Control Unit HEPA High Efficiency Particle Air WIW In-wafer RPM Turn / Min 100 Heat Treatment Device 101 Container 102 Processing Room 104 Support 106 Wafer 108 Wafer 110 Insulation block 112 Heating element 116-1, 116-2 Upstream syringe
1 14 溫度分佈T/C 1 1 6 A 噴射器 118 通孔 120 墊片 12 1 排氣槽 122 Ο形環 124 底座板 126 排氣口 -33- (30) (30)200416773 127 通風系統 128 軸座 129 環形流通道 130 軸座 132 〇形環 133 上凸緣 134 頂部 135 側壁 136 側部 13 7 向內延伸的底座 138 底部 139、143 回塡/淸洗氣體進入口 140 軸座 14 0 絕緣塊1 14 Temperature distribution T / C 1 1 6 A Injector 118 Through hole 120 Gasket 12 1 Exhaust groove 122 O-ring 124 Base plate 126 Exhaust port -33- (30) (30) 200416773 127 Ventilation system 128 shaft Seat 129 Annular flow passage 130 Shaft seat 132 O-ring 133 Upper flange 134 Top 135 Side wall 136 Side 13 13 Inwardly extending base 138 Bottom 139, 143 Backwash / wash gas inlet 140 Shaft seat 14 0 Insulation block
141 T/C 142 石英坩堝 144 通道 145 ' 147 冷卻口 146 熱遮蔽 148 臂 1 49 壓力監視口 150 可旋轉軸 151、161 處理氣體進入口 152 上層 -34- (31) 200416773 15 3 熱遮蔽組合 154 下層 155 致動器 15 6 內部冷卻通道 158 閘板 160 水道 162 磁耦合晶圓旋轉系統141 T / C 142 Quartz Crucible 144 Channel 145 '147 Cooling port 146 Thermal shield 148 Arm 1 49 Pressure monitoring port 150 Rotatable shaft 151, 161 Process gas inlet 152 Upper-34- (31) 200416773 15 3 Thermal shield combination 154 Lower layer 155 Actuator 15 6 Internal cooling channel 158 Gate 160 Water channel 162 Magnetically coupled wafer rotation system
164 旋轉機械 166 旋轉馬達 168 磁鐵 17 0 鋼環 17 2 驅動軸 174 磁鐵 176 磁鐵 180-1、 180-2 孔口164 Rotating machinery 166 Rotating motor 168 Magnet 17 0 Steel ring 17 2 Drive shaft 174 Magnet 176 Magnet 180-1, 180-2 Orifice
1 80 孔□ 18 2 排出口或槽 18 4 主要注射器 186 次要注射器 216 噴射器 1121-1、112卜2及112卜3 加熱元件 -35-1 80 hole 18 2 Discharge port or slot 18 4 Primary syringe 186 Secondary syringe 216 Ejector 1121-1, 112 2 and 112 3 Heating element -35-