JP3423131B2 - Heat treatment equipment and treatment equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a heat treatment apparatus and a processing apparatus.

[0002]

2. Description of the Related Art As one of manufacturing processes of semiconductor devices, there is a heat treatment process for performing CVD, oxidation, diffusion treatment and the like, and a vertical heat treatment device is known as a device for carrying out this heat treatment process in batch processing.

A conventional vertical heat treatment apparatus will be described with reference to FIG. 12. Reference numeral 1 denotes a reaction tube having a double tube structure in which an inner tube 11 and an outer tube 12 are arranged concentrically. This reaction tube 1
A cylindrical metal manifold 2 is joined to the bottom of the pipe, and an O-ring 20 for hermetically sealing is provided between the lower end flange of the outer pipe 12 and the upper end flange of the manifold 2. Has been done.

The manifold 2 is connected to a gas introduction pipe 21 for supplying a processing gas into the inner pipe 11 and an exhaust pipe 22 for exhausting gas from between the inner pipe 11 and the outer pipe 12. A tape heater 22a for heating to a predetermined temperature is wound around the outer periphery of 22 to prevent exhaust matter from adhering to the inner surface of the exhaust passage. Around the reaction tube 1, a heating furnace 15 provided with a heater 14 on the inner circumference of the heat insulator 13 is provided so as to surround the reaction tube 1.

On the other hand, the lower end opening of the manifold 2 serves as a wafer loading / unloading port (furnace port) and is opened / closed by a lid 23. The lid 23 is provided on the boat elevator 24, and the wafer boat 17 is placed on the lid 23 via the heat insulating substrate 16. The wafer boat 17 is configured to hold a large number of wafers W in a shelf shape, and is loaded and unloaded into the reaction tube 1 by the boat elevator 24.

As the heat insulating substrate 16, a so-called tubular body such as a heat insulating tube is also used, but it is of a fin type in which quartz plates 16a are overlapped as shown in the figure because there is no fear of rupture. Things are becoming used.

[0007]

However, the wafer W is
In order to make the heat treatment region in which the heat treatment area is located at a uniform temperature atmosphere from the upper part to the lower part, the heat insulating substrate 16 must be made quite large, but since the heat insulating substrate 16 is large, the time until the heat insulating substrate 16 itself warms up. Since the heat loss is long due to the long heat transmission of the quartz itself constituting the heat insulating substrate 16, it is difficult to quickly raise or lower the temperature in the reaction tube 1, which is an obstacle to improving the throughput.

By the way, the wafer tends to have a larger diameter, and it is about to shift from the 8-inch size to the 12-inch size. When the wafer becomes 12 inches, the diameter of the reaction tube 1 also becomes considerably large, so that heat easily escapes from the heat treatment atmosphere to the furnace opening, and even if the heat insulating substrate 16 is enlarged, the lower part of the heat treatment atmosphere can be maintained at the treatment temperature itself. However, it is difficult to increase the length of the heat treatment region having a uniform temperature distribution.

When performing the CVD process, it is necessary to heat the inner surface of the manifold 2 to a temperature not lower than the sublimation temperature of the exhaust gas so that the exhaust products such as by-products do not adhere to the inner surface of the manifold. Therefore, it is necessary to heat the inner surface of the manifold 2 to a temperature at which condensation does not occur. On the other hand, O that airtightly seals the manifold 2 and the outer tube 12
The ring 20 needs to be kept at 200 ° C. or lower in order to suppress deterioration, so that the inner surface of the manifold is, for example, 15 ° C. or less.
For example, the temperature of the quartz plate (fin) 16a must be controlled by adjusting the number of stages of the quartz plate (fin) 16a so that the temperature of the O-ring 20 is 200 ° C. or lower while the temperature is 0 ° C. or higher. However, such temperature control is difficult, especially when the wafer is as large as 12 inches, and depending on the type of heat treatment, there is a possibility that deterioration of the O-ring will be accelerated or by-product adhesion will be unavoidable.

Furthermore, since the tape heater 22a wound around the exhaust pipe has a portion such as a flange portion that cannot be sufficiently wound, it is difficult to heat even a fine portion of the exhaust passage to a predetermined temperature. It was difficult to reduce the frequency of maintenance of the exhaust pipe.

The present invention has been made under these circumstances, and an object thereof is to use a quartz heater in which a resistance heating element is provided in a quartz body to provide heat insulation between the heat treatment area and the outside. An object of the present invention is to provide a heat treatment apparatus and a treatment apparatus that exhibit excellent effects such as great effects.

[0012]

According to a first aspect of the present invention, a processing gas is introduced into a processing chamber to which exhaust means is connected via an exhaust path to process a substrate to be processed, and the inner surface of the exhaust path is In the processing device in which the heating means heats the exhaust gas to a temperature in the gas region according to the vapor pressure curve, the heating means is provided inside the tube wall of a tubular quartz body provided concentrically on the inner surface of the exhaust tube. It is characterized by being constituted by a quartz heater provided with a resistance heating element.

The invention of claim 2 is the inner tube and the outer tube of the double tube.
Let hydrogen gas and oxygen gas flow through one and the other, respectively.
While preheating, then burn in a combustor
Generate steam and introduce this steam into the heat treatment atmosphere
In a heat treatment apparatus for oxidizing a substrate to be processed, Within the above
At least one of the tube and outer tube
A quartz heater with a resistance heating element inside the tube wall is used.
It is characterized by being made.Claim 1 or claim 2
In the invention, the quartz heater is, for example, a resistor on the surface of the quartz body.
Form a heat-generating surface consisting of an anti-heating body, and add another stone to this quartz body.
Put the English characters on top of each other so that the heat generating surface is shielded from the outside atmosphere.
It can be configured.

[0014]

[0015]

[0016]

[0017]

[0018]

[0019]

[0020]

[0021]

[0022]

[0023]

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram showing an overall configuration of an embodiment in which the present invention is applied to a vertical heat treatment apparatus.
The same parts as are denoted by the same reference numerals. Reference numeral 1 denotes a quartz reaction tube having a double-tube structure. The inner tube 11 has an upper end opened and the outer tube 12 has a closed upper end. Around the reaction tube 1, a heating furnace 15 constituted by a heater 14 composed of a resistance heating wire is provided on the inner circumference of a heat insulator 13 and is provided with a heating furnace 15.
It is arranged so as to surround. A cylindrical metal-made manifold 2, for example, made of stainless steel, is joined to the bottom of the reaction tube 1, and the lower end flange portion of the outer tube 12 and the manifold 2 are joined together.
An O-ring 20 for hermetically sealing is provided between the upper end flange portion of the O.

The manifold 2 is connected to a gas introduction pipe 21 for supplying a processing gas into the inner pipe 11 and an exhaust pipe 22 for exhausting gas from between the inner pipe 11 and the outer pipe 12. The lower end opening of the manifold 2 is opened and closed by a lid 23 made of metal such as stainless steel.
A wafer boat 17, which is a wafer holder, is mounted on the lid body 23 via the heat insulating substrate 3.

As shown in FIG. 2, the heat insulating substrate 3 has a plurality of disc-shaped reflecting plates 41 fixed side by side by, for example, four quartz rods 42 arranged in parallel with a vertical gap and at the upper end. An auxiliary heating means such as a disk-shaped quartz heater 31 is provided at the position. As shown in FIG. 3 (a), the quartz heater 31 is a transparent quartz plate 32 made of a mixture of platinum (Pt) and an oxide (SiO, PbO, etc.) added with an organic substance to form a paste. For example, a pattern as shown in FIG. 4A is applied by screen printing, and the pattern is baked and solidified to form a heating surface 33 made of a resistance heating element and having a thickness of, for example, 5 to 10 μm. In this example, an opening 32a is formed in the center of the quartz plate 32, and a quartz tube 34 extending vertically to the lower end of the heat insulating substrate 3 is joined to the opening 32a. A power supply line 35 is connected to the heating surface 33, and the power supply line 35 is connected to the quartz tube 34.
It has been inserted through.

On the quartz plate 32, a quartz plate 36 having a slightly protruded peripheral portion is superposed, and the peripheral portions of the quartz plates 32 and 36 are joined to each other by, for example, welding. Quartz plate 3
The thicknesses of 2 and 36 are, for example, 2 to 5 mm, respectively. A recess 36a is formed at the center of the inner surface of the upper quartz plate 36, and the tip of a thermocouple 37, which is a temperature detection unit inserted in the quartz tube 34, is housed in the recess 36a. The power supply line 35 and the thermocouple 37 extend through the quartz tube 34 to the lower end. As a method of connecting the power supply line 35 and the thermocouple 37 to the wiring to the outside, for example, as shown in FIG. 3, a plate having a terminal 35a of the power supply line 35 and a terminal 37a of the thermocouple 37 at the lower end of the quartz tube 34 is used. On the other hand, the terminals may be provided on the heat insulating substrate stage 25 on the lid body 23 so that the terminals are connected to each other when the heat insulating substrate 3 is placed on the stage 25.

The reflector 41 is made in the same manner as the quartz heater 31 except that the power supply line 35 is not connected. That is, the heat generating surface 33 also has a function of a reflecting surface that reflects radiant heat, and the reflecting surface 42 is shown in FIGS.
It is formed on the quartz plate 43 as shown in (b),
A quartz plate 44 is stacked on the quartz plate 43. Further, the quartz plates 43, 44 and the reflecting surface 42 are formed with holes through which the quartz tube 34 and the quartz rod 42 pass. The reflection plate 41 is fixed to the quartz rod 42 by welding or the like. However, the material of the heat generating surface 33 (reflection surface 42) is not limited to the above-mentioned material.

As shown in FIGS. 1 and 5, a quartz heater 51 is provided on the inner surface of the manifold 2 so as to cover the inner surface closely or with a slight gap. The quartz heater 51 is divided into a tubular portion 51a located on the inner side of the inner pipe 11 and a tubular portion 51b located on the outer side of the inner pipe 11, and each tubular portion 51 is formed.
The a and 51b are also configured as divided bodies having a half-divided structure, for example. The quartz heater 51 has the same structure as that of the quartz heater 4 of the heat insulating substrate 3 except that it has a curved surface. The curved heater, for example, two half-divided arc plates are superposed on each other, and one of the opposing faces is the above-mentioned one. A similar heating surface 52 is formed.

Furthermore, in this example, on the inner surface of the lid 23,
A disk-shaped quartz heater 53 similar to the quartz heater 41 (however, the shape corresponding to the region excluding the shaft portion of the heat insulating substrate stage 25) is provided so as to cover the surface. As a method of supplying power to the heat generating surfaces 52 and 54 of the quartz heaters 51 and 53, for example, a conductive path covered with an insulating material is formed inside the manifold 2 or the lid 23 to form a terminal on the inner end side. The quartz heaters 51 and 53 may be engaged and connected to the terminals.

The inner peripheral surface of the exhaust pipe 22 is shown in FIG.
A cylindrical quartz heater 55 is fitted as shown in FIG.
The quartz heater 55 has the same structure as that of the quartz heater 41 except that it is cylindrical, and has a heating surface (for convenience, a mesh shape) on the inner peripheral surface of the outer tube or the outer peripheral surface of the inner tube of the double tube 56 made of quartz. 57), which is formed by coating. The tubular quartz heater 55 is appropriately divided, for example, and the heat generating surface 57 has, for example, a half-divided pattern, and the half-divided patterns are connected at one end side to form a conductive path.
Reference numeral 58 is a power supply line.

The portion of the gas introducing pipe 21 located on the inner side of the manifold 2 itself is formed as a cylindrical quartz heater 61 as shown in FIG. This quartz heater 61 has a heating surface 63 in a double tube 62 made of quartz, like the quartz heater 41 provided in the exhaust pipe 22 described above.
Is formed by coating. Reference numeral 64 is a power supply line.

Next, the operation of the above embodiment will be described. First, a substrate to be processed such as a wafer W is transferred to a wafer boat 17 on a boat elevator 24 in a lower region of the reaction tube 1 by a transfer arm (not shown), and the wafer boat 17 holds a large number of wafers W in a shelf shape. Let Then, the boat elevator 24 is raised to carry the wafer boat 17 into the reaction tube 1, and the furnace opening (the lower end opening of the manifold 2) is hermetically closed by the lid 23.

Then, the inside of the reaction tube 1 is exhausted to a predetermined degree of vacuum through the exhaust pipe 22 by a vacuum pump (not shown), and the inside of the reaction tube 1 is heated to a predetermined processing temperature by the heater 14 of the heating furnace 15. At this time, the quartz heater 41 of the heat insulating substrate 3 and the quartz heaters 51, 53, 55 and 61 of each part including the manifold 2 are turned on. As an example of the heating temperature of each part, for example, when a nitride film is formed at a processing temperature of 700 ° C. using ammonia (NH ₃ ) and dichlorosilane (SiH ₂ Cl ₂ ), the set temperature of the quartz heater 31 of the heat insulating substrate 3 is set. Is set to 600 ° C., the quartz heater 51 of the manifold 2, the quartz heater 53 of the lid 23, the exhaust pipe 22
Quartz heater 55 and the quartz heater 61 of the gas introduction pipe 21
The preset temperatures are 150 ° C., 150 ° C., 150 ° C. and 150 ° C., respectively.

Thereafter, the processing gas is supplied into the reaction tube 1 through the gas introduction pipe 21 and the nitride film is formed on the wafer W by, for example, CVD.
After forming a film on the upper surface and performing CVD for a predetermined time, the inside of the reaction tube 1 is returned to the atmospheric pressure, the boat elevator 24 is lowered, and the wafer W is unloaded.

According to such an embodiment, the quartz heater 31 is provided on the heat insulating substrate 3, and the reflection plate 41 having the reflection surface 42 is arranged so as to be overlapped with each other so that the radiant heat is reflected to the heat treatment area side and the lower side. Since the permeation into the furnace is reduced, it is possible to suppress the heat radiation from the heat treatment area to the furnace opening side. Therefore, it is possible to lengthen the heat treatment area having a uniform temperature distribution in the vertical direction and to raise the temperature of the heat treatment area in a short time.

Since the inner surfaces of the manifold 2 and the lid 53 are heated by the quartz heaters 51 and 53, respectively, the surfaces of the manifold 2 and the lid 53 are set to temperatures at which reaction products or by-products are prevented from adhering to each other. It is extremely easy to keep the O-ring 20 between the outer tubes 12 at a heat resistant temperature or lower. However, in the present invention, the quartz heaters 51 and 53 do not necessarily have to be provided on the manifold 2 and the lid 23, and even in this case, since the quartz heater 41 of the heat insulating substrate 3 performs auxiliary heating, only the heater 14 of the heating furnace 15 is used. As compared with the case where the inner surface of the manifold 2 is heated to a predetermined temperature, the temperature control of each part is easier.

Further, since the inner surface of the exhaust pipe 22 is covered with the quartz heater 55 to heat it to a temperature not lower than the sublimation temperature of the exhaust gas, compared to the case where the tape heater is wound around the outer peripheral surface of the exhaust pipe 22, the joint portion of the pipes, etc. There is also an advantage that heating can be carried out in detail and exhaust substances can be prevented from adhering, and in addition, since a heater is provided on the inner surface side of the exhaust pipe 22, heating efficiency is good.

Further, since the processing gas is preheated by forming the tip portion of the gas introducing pipe 21 by the tubular quartz heater 61, the vapor phase reaction surely takes place even in the lower part of the heat treatment region, and the film thickness is changed. A film having high uniformity can be formed. Since the quartz heaters 31, 51, 53, 61 provided in the reaction tube have a structure in which the resistance heating element is covered with quartz, there is no risk of contaminating the wafer W.

In the above, the heat insulating substrate 3 may have a structure in which the quartz heaters 31 are provided in two or more stages, or, as shown in FIG.
The quartz heater 30 with a reflecting surface may be used in which the reflecting surface 46 is formed, both surfaces are covered with quartz plates 39 and 47, and the heat generating surface 38 is connected to the power supply line 38a. Reference numeral 48 is a quartz tube, and 38b is a thermocouple.

The present invention is a heat treatment apparatus having a heat insulating substrate provided with a quartz heater, a heat treatment apparatus having a quartz heater 51 in the manifold 2, a heat treatment apparatus having a quartz heater 55 in the exhaust pipe 22, and a quartz heater for the gas introduction pipe 21. Each of the heat treatment apparatuses constituted by 61 is independently established, or a heat treatment apparatus in which these are combined may be used.

Further, the present invention can be applied not only to CVD but also to an apparatus for performing wet oxidation treatment with high temperature steam, and in this case, it is necessary to heat to a temperature at which the inner surface of the manifold 2 does not condense, for example, about 150 ° C. Therefore, it is effective to use a quartz heater for the heat insulating substrate 3 or to provide a quartz heater on the inner surface of the manifold 2. Further, the present invention can be applied to an oxidation / diffusion furnace that does not use a manifold, and may be applied not only to a vertical furnace but also to a horizontal furnace. The device for providing the quartz heater in the exhaust pipe 22 is not limited to the batch furnace and may be used in a processing device such as a single-wafer CVD device or an etching device.

In the present invention, the hydrogen gas and the oxygen gas are burned in the combustor to generate high temperature steam, and the steam is supplied into the reaction tube to perform the wet oxidation process on the wafer. A quartz heater may be applied to the preheating section of the vessel. FIG. 8 is a diagram showing such an embodiment, the preheating unit 7 is configured as a double pipe composed of an inner pipe 71 and an outer pipe 72, and hydrogen gas is stored in the inner pipe 71 and an outer pipe 72. Oxygen gas is supplied to each inside. As described above, the inner tube 71 and the outer tube 72 are tubular quartz heaters 75 having the heating surfaces 73 and 74, respectively.
A heat insulator 70 is provided around the double pipe.

In this case, the hydrogen gas and the oxygen gas are preheated to, for example, 900 ° C. when they pass through the inner pipe 71 and the outer pipe 72, respectively, and are burned in the combustor 77 to become high temperature steam. It is supplied into the reaction tube via the supply tube 78. In this way, the preheating unit 7 is connected to the quartz heater 7
With the configuration of Nos. 5 and 76, it is possible to reduce the size and simplify each stage as compared with the conventional case where the half-divided heater is provided outside the double tube, and there is an effect that the heating efficiency is high. The quartz heater may be provided on either the inner tube 71 or the outer tube 72.

Furthermore, in the present invention, when performing the above-mentioned wet oxidation treatment or surface reduction treatment with hydrogen gas, a quartz heater may be applied to the combustor for burning the unreacted hydrogen gas exhausted from the reaction tube. . FIG. 9 is a view showing such an embodiment, and the combustor 8 is configured so that the hydrogen gas exhausted from the exhaust pipe 81 is ignited by the pilot burner 82 and is heated by the heater 83. It The heater 83 is composed of a tubular quartz heater as described above, and extends from the main body portion 84 to a position above the exhaust port. Reference numeral 85 is a cover, and 86 is a thermocouple.
As described above, when the quartz heater is used for the heater 83 of the combustor 8, compared with the case where the conventional Pt wire is used as it is, it is covered with quartz, so that it has less wear and has a longer life.

Further, in the present invention, a quartz heater may be applied to the transfer arm of the single-wafer type heat treatment apparatus. 10 and 11 are views showing such an embodiment, where 91 is a vacuum processing chamber, 92 is a processing gas supply unit, 93 is a mounting table equipped with, for example, a ceramic heater, 94 is an exhaust pipe, and 96 is a load. It's a lock room. The load lock chamber 95 is provided with a transfer arm 96 composed of an articulated arm.
The surface portion of the tip arm 96a of No. 6 has a plate-shaped quartz heater 9
It is composed of 7. The quartz heater 97 is configured by providing the heat generating surface 98 in the two quartz plates as described above. 99 is a power supply line.

In such a heat treatment apparatus, the vacuum processing chamber 9
1 is closed by a gate valve (not shown) between the load lock chamber 95 and the load lock chamber 95, and the inside of the vacuum processing chamber 91 is depressurized to a predetermined vacuum degree. Next, the transfer arm 96 in the load lock chamber 95 transfers the wafer W onto the mounting table 93, and the ceramic heater in the mounting table 93 heats the wafer W to, for example, 850 ° C. Then, for example, SiH ₄ gas and N ₂ O gas are supplied into the vacuum processing chamber 91 to form a silicon oxide film on the surface of the wafer W, and then the transfer arm 96 receives the wafer W and carries it out into the load lock chamber 95. The wafer W is transferred between the transfer arm 96 and the mounting table 93 by using, for example, three lifting pins provided in the mounting table 93.

If the wafer W is preheated to, for example, 400 to 500 ° C. by the quartz heater 97 of the transfer arm 96 when the wafer W is transferred to the mounting table,
Can be quickly raised to the processing temperature, a high throughput can be obtained, and rapid temperature rise can be avoided, so that cracking of the wafer W, which is called slip, can be prevented. After the heat treatment, the transfer arm 9
Even when the wafer 6 receives the wafer W, by heating the surface of the quartz heater 97 to, for example, 200 ° C., rapid cooling can be avoided and slip can be prevented.
Since the wafer W is held by the surface of the quartz plate of the quartz heater 97, there is no possibility of contaminating the wafer W.

According to the present invention, there is a large heat insulating effect against the heat that escapes from the heat treatment area to the furnace mouth side, and a uniform heat treatment area can be formed over the lower side. The following effects can be obtained for each of the described inventions. According to the present invention, it is possible to prevent adhesion of the manifold inner surface and condensation and discharge of the exhaust path. Claim 2
According to the invention, the hydrogen gas and oxygen gas to be sent to the combustor
Since a quartz heater is used for the equipment heating unit, the preheating unit
Can be miniaturized.

[0050]

[Brief description of drawings]

FIG. 1 is a vertical sectional side view showing an overall configuration of an embodiment of the present invention.

FIG. 2 is a perspective view showing an appearance of a heat insulating substrate used in the embodiment of FIG.

FIG. 3 is a sectional view showing a part of the heat insulating substrate.

FIG. 4 is a plan view showing a quartz heater and a reflection plate used for the heat insulating substrate.

5 is a cross-sectional view showing a part of a manifold and an exhaust pipe in the embodiment shown in FIG.

FIG. 6 is a perspective view showing a gas introduction pipe used in the embodiment of FIG.

FIG. 7 is a cross-sectional view showing the main parts of another example of a heat insulating substrate.

FIG. 8 is a perspective view and a sectional view showing a combustor and a preheating unit according to another embodiment of the present invention.

FIG. 9 is a sectional view showing a combustor according to still another embodiment of the present invention.

FIG. 10 is a vertical sectional side view showing an overall configuration of still another embodiment of the present invention.

11A and 11B are a side view and a plan view showing the transfer arm in the embodiment of FIG.

FIG. 12 is a vertical cross-sectional side view showing a conventional vertical heat treatment apparatus.

[Explanation of symbols]

1 reaction tube 15 heating furnace 2 manifold 21 Gas introduction pipe 22 Exhaust pipe 3 Thermal insulation base 31 Quartz heater 32, 36 Quartz plate 41 Reflector 42 Reflective surface 43, 44, quartz plate 51, 53, 55 Quartz heater 61 Quartz heater 63 Heating surface 7 Preheating section 71 inner tube 72 outer tube 73,74 Heating surface 77 Combustor 8 Combustor 81 Exhaust pipe 83 Heating unit 91 Vacuum processing chamber 93 table 95 Road lock room 96 transfer arm 97 Quartz heater

Front page continuation (51) Int.Cl. ⁷ Identification code FI H01L 21/22 511 H01L 21/22 511S 21/324 21/324 R (72) Inventor Toshimitsu Shibata 1-2 chome, Shiroyama-machi, Tsukui-gun, Kanagawa Prefecture No. 41 Tokyo Electron Tohoku Co., Ltd. (56) References JP-A-5-343388 (JP, A) JP-A-6-260430 (JP, A) JP-A-7-280462 (JP, A) JP Hei 5-304136 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/31 C23C 16/455 F27D 7/02 H01L 21/205 H01L 21/22 511 H01L 21/324

Claims (4)

(57) [Claims] 1. A processing gas is introduced into a processing chamber to which exhaust means is connected via an exhaust path to process a substrate to be processed, and an inner surface of the exhaust path is a temperature in a gas region from a vapor pressure curve of an exhaust gas. In the processing device for heating with a heating means so that the heating means is a quartz heater in which a resistance heating element is provided in the tube wall of a tubular quartz body provided concentrically on the inner surface of the exhaust pipe.
A processing device characterized by being configured by a computer. 2. Preheating while passing hydrogen gas and oxygen gas through one and the other of the inner tube and the outer tube of the double tube, and then burning in a combustor to generate high temperature steam,
In a heat treatment apparatus for introducing steam into a heat treatment atmosphere to oxidize a substrate to be treated, at least one of the inner tube and the outer tube is provided with a resistance heating element in a tube wall of a tubular quartz body. A heat treatment apparatus comprising a quartz heater. 3. A quartz heater is configured such that a heat generating surface made of a resistance heating body is formed on the surface of a quartz body, another quartz body is superposed on the quartz body, and the heat generating surface is shielded from an external atmosphere. The heat treatment apparatus according to claim 2 , wherein the heat treatment apparatus is a heat treatment apparatus. 4. A quartz heater is configured such that a heat generating surface made of a resistance heating body is formed on a surface of a quartz body, another quartz body is superposed on the quartz body, and the heat generating surface is shielded from an external atmosphere. The processing device according to claim 1 , wherein the processing device is a processed product.