經濟部中央標準局負工消费合作社印氧 Α7 Β7 五、發明説明（1 ) 本發明係關於半導體晶片等之被處理基板之熱處理裝 置。 在半導髏裝置之製造過程中，為了對被處理基板之半 導體晶片進行氧化，擴散，CVD(Chemical Vapor Deposition) ，退火等處理，使用各種熱處理装置。其中，對多枚晶片 能同時作分批處理之縱型熱處理裝置，則配設有，在其周 圍配置加熱器之所諝熱壁（Hot Wall)型之嫌内設有具有熱 處理室功能之縱型之反應管（process tube〉。而在此反應 管内，介由被處理基板之支持具之晶片盤，Μ適宜間隔上 下方向成水平且多層搭載多枚晶片，而同時對此等多枚晶 .片進行熱處理。 在這種傳統之熱處理裝置，各方向之加熱器放射之熱 量比較容易射入搭載於晶片盤之晶片周緣部，較少射入其 中央部。尤其是進行快速昇降溫時，很容易在晶片中央部 與周緣部之溫度回應性產生顯著之差異，而有由於一片晶 片之面内溫度差所產生之内部應力，使晶片有產生滑動（ 結晶錯開）之傾向。要消除這個問題點，在傳統之縱型熱 處理裝置，係在晶片盤配設Μ面接觸方式支持晶片之周緣 部下面之環狀之支持板（如此配設環狀支持板之晶片板稱 為環形盤），藉此支持板之熱容量抑制晶片周緣部之溫度 回應性，設法減少晶片中央部與周緣部之面内溫度差。 然而，在上述傳統之縱型熱處理裝置，不僅是晶片與 環狀之支持板間之熱傳導爲放射傳熱，晶Η與支持板間所 存在之經由氣體之熱傳導（氣體之傳熱，亦稱作對流傳熱） 本紙張尺度適角中國國家標準（CNS ) Α4規格（210X297公釐） 4 丨丨；---：---一|裝------訂-----{線 (請先閲讀背面之注意事項再填寫本頁) Α7 Β7 經濟部中央揉準局貝工消費合作社印製 五、發明説明（ 也當作重要因素。因此，將反應管内減壓之狀態下進行快 速昇降溫時，環狀之支持板之效果無法充分發揮，又很難 減少晶片中央部與周緣部之面内溫度差。因此，在這種傳 統之縱型熱處理裝置，於減壓下進行快速昇降溫很困難， 因此對提高生產量自有其極限。 因之，本發明是在解決上述問題，其目的在提供，在 熱處理室内，不論是常壓下，縱使在減壓下，也能充分減 少被處理基板之中央部與周緣部之面内溫度差，可進行快 速昇降溫，能夠提高生產量之熱處理裝置。 爲了達成上述目的，本發明之在熱處理室内收容被處 理基板Μ進行熱處理之熱處理装置之特擻爲，在被處理基 板之周圍配設，可Μ遮擋在被處理基板之周緣部射入具有 一定角度Μ上射入角度之加熱器之熱放射之隔熱構件（缓 衝件）。 一般在被處理基板（例如晶片）之周緣部，從加熱器之 熱放射之射入角度愈增大（對射入，被處理基板之被處理 面成為直角），所謂放射形態係數會增大，容易受到熱放 射之影響。惟依據本發明時，由於設在被處理基板周圍之 隔熱構件，可以遮擋在被處理基板之周緣部射入之加熱器 放射之一定射入角度以上之熱放射，因此可顯著抑制周緣 部受到之熱放射之影饗。因此，與傳統之熱處理裝置有異 ，本發明之熱處理装置不僅是從氣體之傳熱，同時也從放 射傳熱之觀點抑制被處理基板周緣部所受到之熱放射之影 蜜，因此在熱處理室内，不僅是在常壓下，在減壓下仍可 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 5 ----·---：----f -裝------訂-----(線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央橾準局貝工消费合作社印装 _B7_ 五、發明説明（3 ) 充分減少被處理基板之中央部與周緣部之面内溫度差。其 結果，可Μ進行快速昇降溫，而得提高生產量。 Η參照附圖說明將本發明熱處理裝置應用在縱型熱處 理裝置之第1實施例如下。在第1圖内，1係藉減壓CVD 對被處理基板，例如對半導體晶片W施Μ成膜處理之縱型 熱處理裝置。水平狀備有，例如不锈辆製之中央部位有圓 形開口部2a之基板2。在此基板2之下方設有，上端及下 端設有朝外之突緣部3a，3b之例如與開口部2a成同心狀配 置之不綉鋼製之短圓筒狀之岐管3，此岐管3上成氣密狀 連接有，形成縱型熱處理爐（熱處理室）之具耐熱性及耐腐 蝕性之材料，例如不透明石英所構成之熱處理容器之反應 管（處理管）4。 反應管4之上端封閉，下端開口，同時在下端有朝外 之突緣部4a。本第1實施例之反應管4之内側有，將上端 及下端開口之石英製之内管5，繫止於形成在岐管3内面 之朝内延伸之突緣部3c，配置成同心圓狀，藉此呈雙層管 構造之縱型熱處理爐。 岐管3在反應管5内設有，從未圖示之處理用氣體供 應源或惰性氣體供應源引進處理用氣體或惰性氣體之多數 導管部6。而且在岐管3設有*可藉未圖示之真空泵浦等 之減壓構件將反應管4內排氣，使成例如10〜1(Γ 8 Torr前 後之真空度之排氣管部7。同時在反應管4之周圍配置有 ，可將反應管4内加熱到例如700〜1200X前後之例如將 霣阻發熱體形成螺旋狀等之加熱源之加熱器8。此加熱器 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） j ,0 ^ I裝 訂 f 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央揉準局員工消費合作社印製 A7 B7 五、發明説明（4 ) 8之外周係介由隔熱材料9覆蓋以冷却護套構造'之例如不 锈鋼製之外殼10。藉此構成所諝分批處理型之加熱爐。再 者，加熱器8，隔熱材9及外殼10係豎立支持在基板2上 。此外，在岐管3之下方成可昇降狀配設有開閉其開口端 之，例如Μ不锈銷製成之蓋體11，可由昇降機構12使其昇 降。在此蓋體11上，介由石英製之保溫茼14載置有多枚， 例如150枚左右之將晶片W上下方向分開適宜間隔多層保 持搭載成水平狀之基板支持具之不透明石英製之晶片盤13 。亦可在蓋體11配設介由保溫茼14使晶片盤13轉動以平均 對晶片W施加熱處理之轉動驅動機構（未圖示）。 晶片盤13係如第1圖至第3圖所示，備有Μ適宜間隔 配置成圍繞圓板狀之晶片W周圍之多根（3〜4根，第1 實施例爲3根〉支柱15,此等支柱15設有，可將多片例如 150片左右之晶片W在上下方向分開適宜間隔多層支持搭 載成水平狀之溝狀之繫止部16。支柱15之一方成開放部17 ，俾可由水平方向藉由移載機構（移載用機器人）移載晶片 W。再者，上述移載機構係如第3圖所示，備有舌片狀之 移載臂18,可將晶片W載置於移載臂18上，在反應管4下 方之移載區進行將晶片W移載於晶片盤13等之移載作業。 特別是本發明熱處理裝置之第1實施Μ係如第2圖與 第3圖所示，在晶片盤13之支柱15，於晶片W周圍Μ跟晶 片W相同之間隔多層配設有呈百葉窗型之圓環狀之隔熱構 件19 (緩衝件）19，可使各晶片W位於上下相鄰之隔熱構件 19中間，俾遮擋從加熱器以一定之射入角度θ Μ上之角度 本紙張尺度適用中國國家標準（CNS ) Α4規格（210 X 297公釐） -7 - ； 7 J 丨裝 訂 未 备 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印装 A7 B7 五、發明説明（5 ) 射入晶片W周緣部之放射熱。隔熱構件19由具有耐熱性及 隔熱性，且不易成為晶片之污染源之材質，例如不透明石 英，所構成。而隔熱構件19係形成為可鬆嵌於晶片盤13之 支柱外侧之偏平圓環狀，並將其内緣部之幾處用焊接20固 定在晶片盤13之支柱15外侧，而固定之（參照第2圖及第 3圖）。 假設如第2圖所示，晶片W之半徑為R，隔熱構件19 之内緣（內徑）部之半徑為Ra。外緣（外徑）部之半徑為Rb， 則隔熱構件19之大小係如下決定。即，一般在溫度不相同 之兩個固體面間之放射傳熱之傳熱量Q〔kcal/h〕可由下 式Q= F(T14 - T24〕A表示之。F係放射形態係數，對射入面 之射人角度在0度時為〇，隨箸射入角度之增大而增大，射 入角度在90度時為最大之無次元數。兩個固定面之面積極 大，而距離極近時，取最大值1。亦即，這個時候是放射 不會漏到兩固定面間Μ外之狀態。T1係加熱器8之溫度， Τ2係晶片W之溫度，Α係其他常數。 晶片W之半徑R為1時，從Μ—定間隔縱方向配置多層 之晶片W之面内某一點對加熱源整體之放射形態係數F， 係如第4圖所示，大致從0.7之點至晶片W之邊緣部（1之 點）急激增大。因此，如第2圖所示之晶片W之半徑11為0.7 ，隔熱構件19之外緣部之半徑Rb為1時，則可使晶片W面 内之放射形態係數F較小。因此，以晶片对之半徑[^為1時 ，隔熱構件19之外緣部之半徑為1.4，邸為晶片W之半徑R .之1.4倍時最佳。再者，從隔熱效果來講，隔熱構件19之 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） 8 | ^ ·裝 訂 ^線 (請先閲讀背面之注意^項再填寫本頁) 經濟部中央樣準局真工消费合作社印製 A7 B1_ 五、發明説明（6 ) 外緣部之半徑Rb因具有某種程度之允許範圍，因此是晶片 W之半徑R之1.2〜1.8倍最好。其理由是，其比例低於1.2 倍時，隔熱效果會降低，而超過1.8倍時，隔熱效果會增 大而妨礙快速昇降溫。 而隔熱構件19之内緣部之半徑Ra如果差不多等於晶片 W之半徑R(即兩者十分接近時），則可以較晶片W之半徑R 稍小，或如本第1實施例較晶片W之半徑R稍大（參照第2 圖）。同時，隔熱構件19之厚度等亦可調節使其熱容量較 晶片W為大。而隔熱構件19之内徑（內緣部），外徑（外緣 部）及厚度係考慮上述之值（比），同時經實驗而具體設定 之，俥在實際之快速昇降溫時能儘量減少晶片W之中央部 與周緣部之面内溫度差。 其次說明本第1實施例之作用。首先如第1圖所示， 當藉移載臂18 (參照第3圖）將晶片W移載至，利用昇降機 構12下降移動至反應管4下方之移載區之配設在蓋體11上 之晶片盤13後，刖由移載機構12使蓋體11移動上昇，將晶 片盤13運進反應管4内。然後蓋體11則氣密狀抵接於岐管 3之下端突緣部3b，密封反應管4內。 而利用排氣管部7之排氣（抽真空）將反應管4内置換 成真空後，從引進管部6引進惰性氣體，例如気氣（N2)， Μ気氣（Na)置換反應管4内。然後停止引進惰性氣體，藉 加熱器8快速使晶HW昇溫至一定之處理溫度後，由引進 管部6引進一定之處理用氣髏，同時將反應管4内維持在 一定之減壓狀態，對晶片W進行成膜處理等之熱處理。結 本紙浪尺度適用中國國家標隼（CNS ) A4規格（210X 297公釐） --I---；----* 裝------訂-----(線 (請先閱讀背面之注意事項再填寫本覓) 經濟部中央梂準局—工消費合作社印製 A7 ___B7_ 五、發明説明（7 ) 束此項熱處理後，令熱處理過之晶片W快速降溫至例如室 内溫度藉蓋體11之下降移動將處理後之晶片W連同晶片盤 13蓮出反應管4外。 如此，本發明第1實施例之熱處理装置，係在減壓下 之熱處理室內進行晶片W之快速昇溫及快速降溫。而依據 本發明之熱處理裝置時，可利用設在晶片W周圍之隔熱構 件19,遮擋從加熱器射入此周緣部之一定射入角度ΘΜ上 之熱放射，而抑制晶片W周緣部之熱放射造成之影堪（參 照第2圖）。亦即，隔熱構件19之遮擋作用及其熱容量之 缓和作用，抑制起因於分批處理型加熱之晶片W周緣部之 ,熱放射之影逛，使晶片W周緣部之溫度回應性與中央部之 溫度回應性大致上相同。而且能夠儘可能減少快速昇降溫 時之晶片W中央部與周緣部之面内溫度差》使晶片W之面 内溫度均勻。 因此，與傳統之熱處理裝置不同，本發明第1實施例 之縱型熱處理装置係從氣體傳熱及放射傳熱之觀點來抑制 晶片W周緣部所受之熱放射之影湛，因此在熱處理室内， 不僅是在常壓下，在減壓下也可將晶片w之中央部與周緣 部之面内溫度差充分減小Μ進行快速昇降溫，能夠提高生 產量。上述第1實施例之晶片W係以水平狀態上下方向分 開適宜間隔，由周圍配置有多根（例如3根）支柱15之晶片 盤13搭載支持之。尤其是，在此晶片盤13之支柱15Μ差不 多與晶片W同一間隔且交錯配設有多層之圓環狀之隔熱構 件19,因此不僅是常壓下，在減壓下亦可僅可能減少所搭 本紙張尺度適用中國國家標準（CNS ) Μ規格（210Χ 297公釐） ~~ΤΤΓΊ I---：---；-----裝------訂-----{線 (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部中央揉準局貝工消费合作社印裝 五、發明説明（8 ) 載之多片晶片W之中央部與周緣部之面内溫度差，進行快 速昇降溫，而得進一步提高生產量。同時，本發明第1實 施例之縱型熱處理裝置係在上下相鄰接之隔熱構件19之中 間，Μ相互交錯方式配設晶片W，因此，從水平方向移載 晶片W時，移載機構之移載臂18 (參照第3圖〉不會干擾到 隔熱板19，可很容易且迅速經由支柱15間之開口部17移載 晶片W，進一步提高生產量。而且，因隔熱構件19之熱容 量較晶片W爲大*因此不僅是其隔熱效果，連同其熱容量 亦可緩和溫度回應性良好之晶片W周緣部之快速之昇降溫 。其結果，在熱處理室内，不僅是常溫下，在減壓下也可 以充分減小晶片W之中央部與周緣部之面内溫度差，進行 更快速之昇降溫，更進一步提高其生產量。 經使用上述第1實施例之晶片盤13與現用之環形盤進 行快速昇降溫比較試驗（模擬試驗），而獲得下述結果。首 先，現用之環形盤之支持板内徑為140mm，外徑為200mm， 厚度為5mm，另一方面，本第1實施例之晶片盤13之隔熱 構件19之内徑（Ra)爲210m，外徑（Rb)爲280mm，厚度（t) 為5mm。而晶片W之大小為8吋，晶片間隔（p)爲20mm (參照 第2圖〉。 而對晶片W進行從室溫25·〇快速昇溫到800¾之昇溫 處理（例如〇〇 /分），與從800=0快速降溫到251C之快速 降溫處理（例如-〇〇 10/分）。其結果，使用現用之環形盤 時，晶片W之中央部與周緣部之面內溫度差最多達50C， 而使用本第1實施例之晶片盤13時之晶片W之中央部與周 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 11 I ^ ^ ^ — 裝 I I I 、今口 1 I |( 線 (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部中央標牟局負工消费合作社印製 五、發明説明（9 緣部之面内溫度差則最多35¾。结果是充分證實3可藉本 發明減少晶片W之面内溫度差。 第5圖及第6圖表示本發明之熱處理裝置之第2實施 例。其與上述第1實施例相同之部分檷有同一記號，而詳 細之說明則從略。如圖示，本第2實施例之晶片盤13備有 以圍繞平坦而圓環狀之隔熱構件19周圍狀分開適宜間隔配 置之多根（3〜4根），例如3根之支柱15。在此支柱15内 側Μ焊接其外緣部之方式，固定上下方向分開適宜間隔之 多層圓環狀之隔熱構件19。並且在配設多層之各隔熱構件 19之内緣部上面，於周方向分開適宜間隔（例如在3等分 之位置）設有用以將晶片W支持在相鄰隔熱構件19中間之 支持部21。依據本第2實施例時，可獲得與上述第1實施 例一樣之作用效果，同時因晶片盤13之支柱15離開晶片W 之周緣部，因此可儘可能減少支柱15對晶片W之面内溫度 之均勻化產生影轡。 如以上所述，本發明之熱處理裝置可用作熱處理多片 晶片之分批式縱型熱處理裝置，而且也可以應用作熱壁型 之葉片式熱處理裝置。而被處理基板則除了半導體晶片之 外，例如也可以處理LCD基板等。而隔熱構件之材料則除 了不透明石英之外，也可Μ使用例如碳化矽（Sic)等。 圖式之簡單說明 第1圖係表示本發明熱處理裝置之第1實施例之整體 結構之縱向截面圖。 第2画係表示在本發明第1實施例之熱處理裝置之被 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 12 I丨---^----j--裝------訂-----{ 線 (請先閱讀背面之注意事項再填寫本頁) 3003^7 五、發明説明（10 ) 處理基板搭載部之從加熱器射入1½¾放射之狀態之概略縱 向截面圖。 第3圖係第2圖所示被處理基板搭載部之平面圖。 第4圖係表示晶片尺寸與放射形態係數之關係之曲線 画。 第5圖係本發明熱處理裝置之第2實施例之被處理基 板搭載部之槪略縱向截面圖。 第6圖係第5圖所示被處理基板搭載部之平面圖。 元件檫號對照 經濟部中央標準局—工消费合作社印製 W . _ .晶片 11.. ..蓋體 1… .縱型熱處理装置 12.. .•昇降機構 2… .基板 13.. ..晶片盤 3 . . · .岐管 14.. ..保溫筒 4… .反應管 15.. ..支柱 5… .内管 16.. ..繫止部 6 ... .引進管部 17.. •.開口部 7 ... .排氣管部 18.. ..移載臂 8… .加熱器 19.. ..隔熱構件 9 . . · .隔熱材 21.. ..支持部 10··. .外殼 I丨^---1‘----{—裝------訂-----(線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 13The Ministry of Economic Affairs, Central Bureau of Standards, Negative Work Consumer Cooperative Printed Oxygen Α7 Β7 V. Description of the Invention (1) The present invention relates to a heat treatment device for processed substrates such as semiconductor wafers. In the manufacturing process of the semi-conductor device, various heat treatment devices are used in order to oxidize, diffuse, CVD (Chemical Vapor Deposition), anneal, etc. the semiconductor wafer of the substrate to be processed. Among them, the vertical heat treatment device that can process multiple wafers in batches at the same time is equipped with a vertical wall with a heat treatment chamber function in the hot wall type with a heater around it. A type of reaction tube (process tube). In this reaction tube, the wafer tray is supported by the substrate of the substrate to be processed, and M is horizontally spaced up and down at a suitable interval and multiple wafers are mounted in multiple layers, and multiple crystals are simultaneously processed. In this traditional heat treatment device, the heat radiated by the heaters in all directions is more likely to be injected into the peripheral edge of the wafer mounted on the wafer tray, and less into the center. Especially when rapid temperature rise and fall, it is very It is easy to produce a significant difference in the temperature response between the center and the periphery of the wafer, and the internal stress generated by the temperature difference in the plane of a wafer makes the wafer tend to slip (crystal stagger). To eliminate this problem In the traditional vertical heat treatment device, the wafer tray is equipped with an M-plane contact method to support a ring-shaped support plate below the peripheral portion of the wafer (such a ring-shaped support The wafer plate holding the plate is called a ring disk), thereby supporting the heat capacity of the plate to suppress the temperature responsiveness of the wafer peripheral portion, and trying to reduce the in-plane temperature difference between the central portion and the peripheral portion of the wafer. However, in the above-mentioned conventional vertical heat treatment device , Not only the heat conduction between the wafer and the ring-shaped support plate is radiation heat transfer, but the heat conduction through the gas existing between the crystal H and the support plate (heat transfer of gas, also known as convection heat transfer) National Standard (CNS) Α4 specification (210X297mm) 4 丨 丨; ---: --- one | installed ------ order ----- {line (please read the precautions on the back before filling in This page) Α7 Β7 Printed by the Ministry of Economic Affairs of the Central Bureau of Economic Development of Beigong Consumer Cooperatives (also regarded as an important factor. Therefore, when the temperature in the reaction tube is depressurized for rapid temperature rise, the ring-shaped support plate The effect cannot be fully exerted, and it is difficult to reduce the in-plane temperature difference between the central portion and the peripheral portion of the wafer. Therefore, it is difficult to rapidly raise and lower the temperature under reduced pressure in this traditional vertical heat treatment device, so it is Has its limits. The purpose of the present invention is to solve the above-mentioned problems, and its purpose is to provide that the temperature difference between the central portion and the peripheral portion of the substrate to be processed can be sufficiently reduced in the heat treatment chamber, whether under normal pressure or under reduced pressure, A heat treatment device that can quickly raise and lower the temperature and increase the throughput. In order to achieve the above purpose, the special feature of the heat treatment device that houses the substrate to be processed M in the heat treatment chamber and performs heat treatment in the present invention is that it is arranged around the substrate to be processed. Μ Blocks the thermal insulation member (buffer) that shields the heat radiation of the heater with a certain angle M into the peripheral edge of the substrate to be processed. Generally, the peripheral edge of the substrate to be processed (such as a wafer) is heated from the The greater the incidence angle of the thermal radiation of the device (for injection, the processed surface of the substrate to be processed becomes a right angle), the so-called radiation form factor will increase and it is easily affected by thermal radiation. However, according to the present invention, since the heat insulating member provided around the substrate to be processed can block the heat radiation above a certain incident angle of the heater radiation incident on the peripheral portion of the processed substrate, the peripheral portion can be significantly suppressed The shadow of the heat radiation. Therefore, unlike the conventional heat treatment apparatus, the heat treatment apparatus of the present invention not only suppresses the heat radiation from the gas, but also suppresses the shadow radiation of the heat radiation received by the peripheral portion of the processed substrate from the viewpoint of radiation heat transfer, so it is in the heat treatment chamber , Not only under normal pressure, but also under reduced pressure, the paper scale can be applied to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 5 ---- · ---: ---- f -installed- ----- Subscribe ----- (Line (please read the notes on the back before filling in this page) Printed by the Central Bureau of Economic Affairs of the Ministry of Economic Affairs Beigong Consumer Cooperative_B7_ V. Description of Invention (3) Fully reduce The temperature difference between the central portion and the peripheral portion of the processing substrate is processed. As a result, the temperature can be rapidly raised and lowered to increase the throughput. Η The first embodiment of applying the heat treatment apparatus of the present invention to a vertical heat treatment apparatus will be described with reference to the drawings For example, in Figure 1, 1 is a vertical type heat treatment device that applies M film-forming treatment to a substrate to be processed, such as a semiconductor wafer W, by reduced-pressure CVD. It is provided horizontally, such as a central part made of stainless steel. Substrate 2 with a circular opening 2a. Below this substrate 2 is provided Yes, the upper and lower ends are provided with outwardly facing flange portions 3a, 3b, for example, a short cylindrical manifold 3 made of stainless steel concentrically arranged with the opening 2a, and the manifold 3 is airtight Connected with a heat-resistant and corrosion-resistant material that forms a vertical heat treatment furnace (heat treatment chamber), such as a reaction tube (treatment tube) 4 of a heat treatment container composed of opaque quartz. The reaction tube 4 is closed at the upper end and open at the lower end. At the same time, there is a flange portion 4a facing outward at the lower end. Inside the reaction tube 4 of the first embodiment, an inner tube 5 made of quartz opening at the upper end and the lower end is held inwardly formed on the inner surface of the manifold 3 The extended flange portion 3c is arranged concentrically to form a vertical heat treatment furnace with a double-tube structure. The manifold 3 is provided in the reaction tube 5 and is supplied with a processing gas supply source or an inert gas from an unillustrated process The supply source introduces a large number of conduit parts 6 for processing gas or inert gas. In addition, the manifold 3 is provided with * a pressure reducing member such as a vacuum pump (not shown) can be used to exhaust the inside of the reaction tube 4 to, for example, 10 to 1. (The exhaust pipe part 7 with vacuum degree before and after Γ 8 Torr. At the same time in the reaction tube 4 There is a heater 8 that can heat the reaction tube 4 to a heating source such as around 700 ~ 1200X, such as forming a spiral resistance heating element in a spiral shape. The paper standard of this heater is applicable to China National Standard (CNS) A4 Specifications (210X 297 mm) j, 0 ^ I binding f line (please read the precautions on the back before filling in this page) A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Economic Development of the Ministry of Economy V. Description of invention (4) 8 of The outer periphery is covered by a heat-insulating material 9 with a cooling jacket structure, such as a stainless steel housing 10. This constitutes a batch-type heating furnace. Furthermore, the heater 8, the heat insulating material 9 and the housing 10 It is erected and supported on the substrate 2. In addition, a cover body 11 made of stainless steel pins, such as a stainless steel pin, which can open and close its opening end is arranged under the manifold 3 in a liftable manner, and can be raised and lowered by the lift mechanism 12. On this lid 11, a plurality of opaque quartz wafers mounted on a substrate support having a horizontal shape are mounted by placing a plurality of, for example, about 150 wafers, which are separated by a thermal insulation chrysanthemum 14 made of quartz, with a vertical interval of the wafer W at appropriate intervals Disk 13. A rotation drive mechanism (not shown) that rotates the wafer tray 13 via the thermal insulation 14 to apply heat treatment to the wafer W on average may be provided in the cover 11. As shown in FIGS. 1 to 3, the wafer tray 13 is provided with a plurality of M (3 to 4 pieces, 3 pieces in the first embodiment> pillars 15) arranged at appropriate intervals to surround the wafer-shaped wafer W. These pillars 15 are provided with a plurality of, for example, about 150 wafers W, spaced up and down at appropriate intervals, and supported by a plurality of horizontal groove-shaped locking portions 16. One of the pillars 15 forms an open portion 17, so that In the horizontal direction, the wafer W is transferred by a transfer mechanism (transfer robot). As shown in FIG. 3, the transfer mechanism is equipped with a tongue-shaped transfer arm 18 to place the wafer W On the transfer arm 18, the transfer operation of transferring the wafer W to the wafer tray 13 etc. is carried out in the transfer area below the reaction tube 4. In particular, the first embodiment of the heat treatment apparatus of the present invention is shown in FIG. 2 and FIG. As shown in FIG. 3, on the pillar 15 of the wafer tray 13, a circular ring-shaped heat insulating member 19 (buffer) 19 having a louver type is arranged in multiple layers around the wafer W at the same interval as the wafer W to enable each wafer W is located in the middle of the heat insulation member 19 adjacent to the top and bottom, so as to block the paper from the heater at a certain incident angle θ Μ The Zhang scale applies to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) -7-; 7 J 丨 binding is not prepared (please read the precautions on the back before filling in this page) Beigong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs Printing A7 B7 5. Description of the invention (5) Radiant heat incident on the peripheral portion of the wafer W. The heat insulating member 19 is made of a material that has heat resistance and heat insulation and is not likely to be a source of contamination of the wafer, such as opaque quartz. The heat insulating member 19 is formed into a flat circular ring that can be loosely fitted on the outside of the pillar of the wafer tray 13, and fixes several parts of its inner edge to the outside of the pillar 15 of the wafer tray 13 by welding 20, and fixes it ( (Refer to Figure 2 and Figure 3). As shown in Figure 2, the radius of the wafer W is R, and the radius of the inner edge (inner diameter) portion of the heat insulating member 19 is Ra. The outer edge (outer diameter) portion When the radius is Rb, the size of the heat insulating member 19 is determined as follows. That is, the heat transfer quantity Q [kcal / h] of the radiation heat transfer between two solid surfaces with different temperatures can be expressed by the following formula Q = F (T14- T24] A means it. F is the radiation form factor, and the angle of the shot to the incident surface is 0 The time is 〇, which increases with the increase of the angle of injection of the chopstick. The angle of incidence is the largest dimensionless number at 90 degrees. The area of the two fixed surfaces is extremely large, and when the distance is extremely close, the maximum value is 1. That is, at this time, it is in a state where radiation does not leak out of M between the two fixed surfaces. T1 is the temperature of the heater 8, T2 is the temperature of the wafer W, and A is other constants. When the radius R of the wafer W is 1, from M —The radiation form factor F to the entire heating source at a certain point in the plane of the multi-layered wafer W at a fixed interval in the longitudinal direction is as shown in Figure 4, which is sharp from the point 0.7 to the edge of the wafer W (point 1) Therefore, when the radius 11 of the wafer W shown in FIG. 2 is 0.7 and the radius Rb of the outer edge of the heat insulating member 19 is 1, the radiation form factor F in the plane of the wafer W can be made smaller. Therefore, when the radius of the wafer pair [^ is 1, the radius of the outer edge portion of the heat insulating member 19 is 1.4, and Di is 1.4 times the radius R of the wafer W. Furthermore, in terms of heat insulation effect, the paper size of heat insulation member 19 is applicable to China National Standard (CNS) A4 specification (210X297 mm) 8 | ^ · Binding ^ line (please read the notes on the back ^ (Fill in this page) A7 B1_ printed by the Real Sample Consumer Cooperative of the Central Prototyping Bureau of the Ministry of Economic Affairs 5. Description of the invention (6) The radius Rb of the outer edge part has a certain allowable range, so it is 1.2 to the radius R of the wafer W 1.8 times is best. The reason is that if the ratio is less than 1.2 times, the heat insulation effect will decrease, and if it exceeds 1.8 times, the heat insulation effect will increase, preventing rapid temperature rise and fall. If the radius Ra of the inner edge portion of the heat insulating member 19 is almost equal to the radius R of the wafer W (that is, when the two are very close), it may be slightly smaller than the radius R of the wafer W, or as compared with the wafer W in the first embodiment The radius R is slightly larger (see Figure 2). At the same time, the thickness of the heat insulating member 19 can be adjusted so that the heat capacity is larger than that of the wafer W. The inner diameter (inner edge portion), outer diameter (outer edge portion) and thickness of the heat insulating member 19 are based on the above values (ratio), and are specifically set by experiment, as long as the actual rapid temperature rise and fall can be as much as possible The temperature difference between the central portion and the peripheral portion of the wafer W is reduced. Next, the function of the first embodiment will be described. First, as shown in FIG. 1, when the wafer W is transferred by the transfer arm 18 (refer to FIG. 3), the lifting mechanism 12 is used to move down to the transfer area below the reaction tube 4, which is arranged on the cover 11 After the wafer tray 13 is moved, the cover 11 is moved up by the transfer mechanism 12, and the wafer tray 13 is carried into the reaction tube 4. Then, the cover 11 abuts on the lower end flange portion 3b of the manifold 3 in an airtight manner, sealing the inside of the reaction tube 4. After replacing the inside of the reaction tube 4 with a vacuum (evacuation) of the exhaust pipe part 7, an inert gas such as deuterium (N2) and Μ 気 gas (Na) are used to replace the reaction tube 4 from the introduction pipe 6 Inside. Then stop the introduction of inert gas, and quickly heat the crystal HW to a certain processing temperature by the heater 8, then introduce a certain processing gas from the introduction tube section 6, and maintain the inside of the reaction tube 4 under a certain reduced pressure state. The wafer W is subjected to heat treatment such as film formation processing. The final paper wave scale is applicable to the Chinese National Standard Falcon (CNS) A4 specification (210X 297 mm) --I ---; ---- * Packing ------ order ----- (line (please first Read the precautions on the back and fill in this) A7 ___B7_ printed by the Central Bureau of Economic Affairs of the Ministry of Economic Affairs and Industry and Consumer Cooperatives 5. Invention Description (7) After this heat treatment, the heat-treated wafer W is quickly cooled to, for example, the room temperature. The lowering movement of the cover 11 brings the processed wafer W and the wafer tray 13 out of the reaction tube 4. As such, the heat treatment apparatus of the first embodiment of the present invention performs rapid temperature rise of the wafer W in the heat treatment chamber under reduced pressure and The temperature is rapidly reduced. In the heat treatment device according to the present invention, the heat insulating member 19 provided around the wafer W can be used to block the heat radiation at a certain incident angle ΘΜ from the heater into this peripheral portion, thereby suppressing the peripheral edge of the wafer W The shadow caused by the heat radiation of the part (see Figure 2). That is, the shielding effect of the heat insulating member 19 and the relaxation effect of its heat capacity suppresses the heat radiation caused by the peripheral portion of the wafer W caused by the batch-type heating Shadow shopping to make the temperature response of the peripheral part of the chip W and The temperature response of the central part is approximately the same. Moreover, the temperature difference between the central part and the peripheral part of the wafer W during rapid temperature rise and fall can be reduced as much as possible to make the in-plane temperature of the wafer W uniform. Therefore, it is different from the conventional heat treatment device The vertical heat treatment device of the first embodiment of the present invention suppresses the heat radiation received by the peripheral portion of the wafer W from the viewpoint of gas heat transfer and radiation heat transfer. Therefore, in the heat treatment chamber, not only under normal pressure, Under reduced pressure, the in-plane temperature difference between the central portion and the peripheral portion of the wafer w can be sufficiently reduced to rapidly raise and lower the temperature, which can increase the throughput. The wafer W of the first embodiment described above is preferably separated horizontally in the vertical direction The interval is supported by the wafer tray 13 with a plurality of (for example, three) pillars 15 arranged around it. In particular, the pillars 15M of the wafer tray 13 are almost at the same interval as the wafer W and are interleaved with multiple layers of circular rings The heat insulation member 19, so not only under normal pressure, but also under reduced pressure, it is only possible to reduce the size of the paper used. China National Standard (CNS) Μ specification (210Χ 297 mm) ~~ ΤΤΓΊ I ---: ---; ----- install ------ order ----- {line (please read the precautions on the back before filling in this page) A7 B7 Central Kneading Bureau of Ministry of Economic Affairs Printed by Beigong Consumer Cooperative V. Description of the invention (8) The temperature difference between the central part and the peripheral part of the multi-wafer W loaded is rapidly raised and lowered to further increase the production volume. At the same time, the first implementation of the invention The vertical heat treatment device of the example is arranged in the middle of the heat insulation members 19 adjacent to each other, and the wafers W are arranged in a staggered manner. Therefore, when the wafer W is transferred from the horizontal direction, the transfer arm 18 of the transfer mechanism (refer to (Figure 3) Without disturbing the heat insulating plate 19, the wafer W can be easily and quickly transferred through the opening 17 between the pillars 15 to further increase the throughput. In addition, since the heat capacity of the heat insulating member 19 is larger than that of the wafer W *, not only the heat insulation effect but also the heat capacity of the heat insulating member 19 can alleviate the rapid temperature rise and fall of the periphery of the wafer W with good temperature response. As a result, in the heat treatment chamber, not only at ordinary temperature, but also under reduced pressure, the in-plane temperature difference between the central portion and the peripheral portion of the wafer W can be sufficiently reduced, the temperature can be raised and lowered more quickly, and the throughput can be further increased. By using the wafer disk 13 of the first embodiment described above and a currently used ring disk to conduct a rapid temperature rise / fall comparison test (simulation test), the following results were obtained. First, the inner diameter of the support plate of the currently used annular disk is 140 mm, the outer diameter is 200 mm, and the thickness is 5 mm. On the other hand, the inner diameter (Ra) of the heat insulating member 19 of the wafer disk 13 of the first embodiment is 210 m. The outer diameter (Rb) is 280 mm, and the thickness (t) is 5 mm. The size of the wafer W is 8 inches, and the wafer interval (p) is 20 mm (refer to FIG. 2). The wafer W is subjected to a temperature increase process (eg, 〇〇 / min) from a room temperature of 25 ° to a rapid temperature rise of 800 °. Rapid cooling from 800 = 0 to 251C (for example-〇〇10 / min). As a result, the temperature difference between the central part and the peripheral part of the wafer W is up to 50C when using the current ring disk, and When using the wafer tray 13 of the first embodiment, the central portion of the wafer W and the paper size are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 11 I ^ ^ ^ — Pack III, Imachi 1 I | (Line (please read the precautions on the back before filling in this page) A7 B7 Printed by the Ministry of Economic Affairs Central Standards Bureau Bureau of Consumer Labor Cooperative Fifth, Invention Description (9 The temperature difference in the plane of the edge is up to 35¾. The result is fully confirmed 3. The present invention can reduce the in-plane temperature difference of the wafer W. Figures 5 and 6 show the second embodiment of the heat treatment apparatus of the present invention. The same parts as the above-mentioned first embodiment have the same symbols and details The explanation is omitted. As shown, the chip of the second embodiment 13 There are a number (3 to 4) of three (3 to 4) poles arranged at appropriate intervals around the flat and circular heat insulating member 19. For example, three pillars 15 are welded to the inner edge of the pillar 15 Way, fix multiple layers of annular heat insulating members 19 spaced up and down at appropriate intervals, and on the inner edge of each heat insulating member 19 with multiple layers, spaced apart at appropriate intervals in the circumferential direction (for example, at 3 equal positions) ) A support portion 21 is provided to support the wafer W in the middle of the adjacent heat insulating member 19. According to this second embodiment, the same effect as the first embodiment described above can be obtained, and at the same time, the support 15 of the wafer tray 13 Since it is away from the peripheral edge of the wafer W, it is possible to minimize the influence of the support 15 on the uniformization of the in-plane temperature of the wafer W. As described above, the heat treatment apparatus of the present invention can be used as a batch type heat treatment for multiple wafers Type heat treatment device, and can also be used as a hot-wall type blade type heat treatment device. The substrate to be processed can also process LCD substrates in addition to semiconductor wafers. The material of the heat insulating member is not In addition to quartz, for example, silicon carbide (Sic) can also be used. Brief description of the drawings. FIG. 1 is a longitudinal cross-sectional view showing the overall structure of the first embodiment of the heat treatment apparatus of the present invention. The size of the paper of the heat treatment device of the first embodiment of the invention is applicable to the Chinese National Standard (CNS) Α4 specification (210X297 mm) 12 I 丨 --- ^ ---- j--installation ------ order- ---- {Line (please read the precautions on the back before filling in this page) 3003 ^ 7 5. Description of the invention (10) A schematic longitudinal cross-sectional view of the state where the 1½¾ radiation is emitted from the heater in the processing board mounting section. FIG. 3 is a plan view of the substrate mounting portion shown in FIG. 2. Figure 4 is a graph showing the relationship between wafer size and radiation form factor. Fig. 5 is a schematic longitudinal cross-sectional view of a substrate mounting portion of a substrate to be treated according to a second embodiment of the heat treatment apparatus of the present invention. Fig. 6 is a plan view of the substrate mounting portion shown in Fig. 5; The component number is printed by W. _. Wafer 11 .... Cover 1…. Vertical heat treatment device 12 .. • Lifting mechanism 2 .. Substrate 13 ... Wafer tray 3... Manifold 14... Insulation tube 4... Reaction tube 15..... Post 5... Inner tube 16..... • Opening 7 ... Exhaust pipe section 18... Transfer arm 8... Heater 19.... Insulation member 9... Insulation material 21.... Support section 10 ·· .. Shell I 丨 ^ --- 1 '---- {— install ------ order ----- (line (please read the precautions on the back before filling this page) The scale is applicable to China National Standard (CNS) A4 specification (210X297mm) 13