JPH0745691A - Wafer holder - Google Patents

Wafer holder

Info

Publication number
JPH0745691A
JPH0745691A JP18845293A JP18845293A JPH0745691A JP H0745691 A JPH0745691 A JP H0745691A JP 18845293 A JP18845293 A JP 18845293A JP 18845293 A JP18845293 A JP 18845293A JP H0745691 A JPH0745691 A JP H0745691A
Authority
JP
Japan
Prior art keywords
wafer
boat
support plate
sic
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18845293A
Other languages
Japanese (ja)
Inventor
Taketoshi Sato
武敏 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP18845293A priority Critical patent/JPH0745691A/en
Publication of JPH0745691A publication Critical patent/JPH0745691A/en
Pending legal-status Critical Current

Links

Landscapes

  • Packaging Of Annular Or Rod-Shaped Articles, Wearing Apparel, Cassettes, Or The Like (AREA)
  • Packaging Frangible Articles (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To hardly slip, crack, cut out a wafer, to reduce heat absorption in a furnace and to reduce a weight of a boat by installing an SiC support plate at a support of the boat, and holding a periphery of the wafer. CONSTITUTION:A ringlike SiC support plate 3A is placed in a groove 2 of an SiC boat 1, and a periphery of a wafer 5 is held at the plate 3A. Thus, an own weight of the wafer 5 is dispersed to the plate 3A to be held, and even if the wafer 5 is heated to 1000 deg.C or higher, a slip, a crack, a cutout hardly occurs. The degree of absorption of heat in a furnace to the plate 3A can be reduced, it can not only be reduced in weight as compared with the case that the weight of the boat is supported to a disclike support plate, but also no deformation occurs due to a high temperature heat treatment, since it is made of SiC, and since it is formed of a simple shape, it can be easily processed at a low cost.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、縦型半導体製造装置に
係り、特にウェーハを支持するホルダに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical semiconductor manufacturing apparatus, and more particularly to a holder for supporting a wafer.

【0002】[0002]

【従来の技術】ウェーハを高温にて熱処理する場合、ウ
ェーハ自重等が原因でスリップが発生する。この問題を
解決するため、ウェーハ自重が局部的にかからないよう
にボートのウェーハ支持部の形状を検討している。図6
はボートに載置された従来のウェーハホルダの1例を示
す斜視図で、特開昭61−247048号公報に記載さ
れたウェーハホルダである。この従来例はボート1の溝
部2にウェーハ5を載せる円環状の支持部8を設けるこ
とにより、ウェーハ5を支持するための自重の負担が分
散されてウェーハのスリップや割れ、欠けが生じ難くな
り、又支持板8の部分を円環状とすることにより炉内の
熱が支持板に吸収される度合を小さくでき、かつボート
の重量が円盤状の支持板を設けた場合に比べ軽くでき
る。
2. Description of the Related Art When a wafer is heat-treated at a high temperature, slippage occurs due to the weight of the wafer itself or the like. In order to solve this problem, the shape of the wafer support portion of the boat is being studied so that the weight of the wafer is not locally applied. Figure 6
FIG. 3 is a perspective view showing an example of a conventional wafer holder mounted on a boat, which is the wafer holder described in JP-A-61-247048. In this conventional example, by providing the annular supporting portion 8 for mounting the wafer 5 on the groove portion 2 of the boat 1, the load of the self-weight for supporting the wafer 5 is dispersed, and the slip, crack, and chip of the wafer are less likely to occur. Also, by making the portion of the support plate 8 annular, it is possible to reduce the degree to which the heat in the furnace is absorbed by the support plate, and to reduce the weight of the boat as compared with the case where a disk-shaped support plate is provided.

【0003】[0003]

【発明が解決しようとする課題】しかし上記従来例にあ
っては高温処理の場合石英製では変形してしまうためS
iC製を使用している。SiCは機械的加工が非常に難
しいので、現状では十分に自重を分散できる形状のボー
トは制作費が非常に高価となるので、実用化されていな
い。
However, in the above-mentioned conventional example, quartz is deformed in the case of high-temperature treatment, so S
iC products are used. Since SiC is extremely difficult to mechanically process, a boat having a shape capable of sufficiently distributing its own weight is currently not practically used because the production cost is very high.

【0004】[0004]

【課題を解決するための手段】本発明は、ウェーハのス
リップ発生を防止し、炉内の熱吸収を少なく、ボートの
重量を軽くすることは勿論、加工の容易なウェーハホル
ダを提供しようとするものである。即ち、本発明ウェー
ハホルダはボートの支持部に、リング状又は中央部が凹
状のSiC製支持板を設置してなる。本発明ウェーハホ
ルダはこのような構成であるからボート1の支持部2に
リング状又は中央部4が凹状のSiC製支持板3A又は
3Bを設置し、この支持板3A又は3Bに、ウェーハ5
の周辺部を保持することによりウェーハのスリップ発生
を防止でき、炉内の熱吸収を少なく、かつボートの重量
を軽くできることは勿論、SiC製の支持板3A又は3
Bはリング状又は中央部4が凹状の単純な形状であるた
め容易に加工することができることになる。
DISCLOSURE OF THE INVENTION The present invention aims to provide a wafer holder which prevents the occurrence of wafer slippage, reduces heat absorption in the furnace, reduces the weight of the boat, and of course is easy to process. It is a thing. That is, the wafer holder of the present invention has a ring-shaped or central concave support plate made of SiC installed on the support part of the boat. Since the wafer holder of the present invention has such a configuration, the ring-shaped or center-shaped concave support plate 3A or 3B made of SiC is installed on the support part 2 of the boat 1, and the wafer 5 is attached to the support plate 3A or 3B.
By holding the peripheral portion of the wafer, the occurrence of wafer slip can be prevented, heat absorption in the furnace can be reduced, and the weight of the boat can be reduced.
Since B has a ring shape or a simple shape in which the central portion 4 is concave, it can be easily processed.

【0005】[0005]

【実施例】図1(A)はボートに載置された本発明ウェ
ーハホルダの平面図、図1(B)は図1(A)における
第1実施例のa−a線断面図、図1(C)は同じく図1
(A)における第2実施例のa−a線断面図である。第
1実施例はボート1の溝部2に、リング状のSiC製支
持板3Aを載置し、この支持板3Aにウェーハ5の周辺
部を保持する(図2参照)。第2実施例はボートの溝部
2に、中央部4が凹状のSiC製支持板3Bを載置し、
この支持板3Bにウェーハ5の周辺部を保持する(図2
参照)。図3は第3実施例の平面図である。第3実施例
は図1(B)に示す支持板3Aに、ウェーハ搬送機のウ
ェーハ吸着プレート逃げ用切り欠き6Aを設けた例で、
ボート内にウェーハ吸着プレートを挿入し、支持板3A
上に載置されているウェーハ5を、その裏面からウェー
ハ吸着プレートにより吸着し、該ウェーハを吸着したま
まウェーハ吸着プレートを逃げ用切欠き6Aを通してボ
ートより搬出できるようにした場合であり、自動移載を
可能にする。図4は第4実施例を示す平面図である。第
4実施例は図1(C)に示す支持板3Bに長方形状のウ
ェーハ吸着プレート逃げ用切欠き6Bを設けた例で、上
記図3と同様の作用をなすものである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1A is a plan view of a wafer holder of the present invention mounted on a boat. FIG. 1B is a sectional view taken along line aa of the first embodiment in FIG. 1A. (C) is also FIG.
It is the aa sectional view taken on the line of the 2nd Example in (A). In the first embodiment, a ring-shaped support plate 3A made of SiC is placed in the groove 2 of the boat 1, and the support plate 3A holds the peripheral portion of the wafer 5 (see FIG. 2). In the second embodiment, the SiC support plate 3B having a concave central portion 4 is placed in the groove portion 2 of the boat,
The supporting plate 3B holds the peripheral portion of the wafer 5 (see FIG. 2).
reference). FIG. 3 is a plan view of the third embodiment. The third embodiment is an example in which a support plate 3A shown in FIG. 1 (B) is provided with a notch 6A for escape of a wafer suction plate of a wafer carrier,
Insert the wafer suction plate into the boat, and support plate 3A
This is the case where the wafer 5 placed on the top is sucked from the back surface thereof by the wafer suction plate, and the wafer suction plate can be carried out from the boat through the escape notch 6A while the wafer is sucked. Enable listing. FIG. 4 is a plan view showing the fourth embodiment. The fourth embodiment is an example in which a rectangular wafer suction plate escape notch 6B is provided in the support plate 3B shown in FIG. 1C, and has the same function as that in FIG.

【0006】本発明ウェーハホルダは上記のような構成
であるから、図2に示すように従来用いられているSi
C製ボート1の溝部2にリング状又は中央部4が凹状の
SiC製支持板3A又は3Bを載置し、この支持板3A
又は3Bにウェーハ5の周辺部を保持することによりウ
ェーハの自重を支持板3A又は3Bに分散して保持でき
るので、ウェーハを1000℃以上に加熱してもスリッ
プや割れ、欠けが生じ難くなり、支持板をリング状又は
中央部4を凹状とすることにより炉内の熱が支持板に吸
収される度合を小さくでき、かつボートの重量が円盤状
の支持板を設けた場合に比べ軽くできることは勿論、S
iC製であるので高温処理による変形が起きず、かつ単
純な形状であるため容易に加工することができ、安価に
実施できる。
Since the wafer holder of the present invention has the above-mentioned structure, it is conventionally used Si as shown in FIG.
An SiC support plate 3A or 3B having a ring shape or a concave center portion 4 is placed in the groove 2 of the C boat 1 and the support plate 3A
Alternatively, by holding the peripheral portion of the wafer 5 in 3B, the weight of the wafer can be dispersed and held in the supporting plate 3A or 3B, so even if the wafer is heated to 1000 ° C. or higher, slips, cracks, and chips are less likely to occur, By making the support plate ring-shaped or concave in the central portion 4, the degree to which heat in the furnace is absorbed by the support plate can be reduced, and the weight of the boat can be made lighter than when a disk-shaped support plate is provided. Of course, S
Since it is made of iC, it does not deform due to high temperature treatment, and it has a simple shape, so it can be easily processed and can be implemented at low cost.

【0007】図5は第5実施例の平面図である。第5実
施例はリング状又は中央部4が凹状のSiC製支持板3
A又は3Bの対称位置に位置決め棒7を設けてなる。こ
のような構成とすることによりボート1に本ウェーハホ
ルダ、即ち支持板3A又は3Bを容易に位置決めして載
置することができ、位置ずれが起き難くなる。
FIG. 5 is a plan view of the fifth embodiment. The fifth embodiment is a support plate 3 made of SiC having a ring shape or a concave central portion 4.
Positioning rods 7 are provided at symmetrical positions of A or 3B. With such a configuration, the present wafer holder, that is, the support plate 3A or 3B can be easily positioned and placed on the boat 1, and the positional deviation is unlikely to occur.

【0008】[0008]

【発明の効果】上述のように本発明によればボートの支
持部に、リング状又は中央部が凹状のSiC製支持板を
設置してなるので、ウェーハの自重を支持板3A又は3
Bに分散して保持でき、ウェーハを1000℃以上に加
熱してもスリップや割れ、欠けが生じ難くなり、炉内の
熱吸収を少なく、かつボートの重量を軽くできることは
勿論、SiC製支持板3A又は3Bはリング状又は中央
部が凹状の単純な形状であるため容易に加工することが
でき、安価に実施できる。
As described above, according to the present invention, the ring-shaped or central concave SiC support plate is installed on the support portion of the boat, so that the weight of the wafer is reduced to the support plate 3A or 3A.
It can be dispersed and held in B, and even if the wafer is heated to 1000 ° C. or higher, slips, cracks, and chips are less likely to occur, heat absorption in the furnace is reduced, and the weight of the boat can be reduced. Since 3A or 3B has a ring shape or a simple shape with a concave central portion, it can be easily processed and can be implemented at low cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】(A)はボートに載置された本発明ウェーハホ
ルダの平面図である。(B)は図1(A)における第1
実施例のa−a線断面図である。(C)は同じく図1
(A)における第2実施例のa−a線断面図である。
FIG. 1A is a plan view of a wafer holder of the present invention mounted on a boat. (B) is the first in FIG. 1 (A)
It is the aa sectional view taken on the line of an Example. (C) is also FIG.
It is the aa sectional view taken on the line of the 2nd Example in (A).

【図2】ボートに本発明ウェーハボートを用いてウェー
ハを載置した状態を示す拡大断面図である。
FIG. 2 is an enlarged sectional view showing a state in which a wafer is mounted on the boat by using the wafer boat of the present invention.

【図3】第3実施例の平面図である。FIG. 3 is a plan view of a third embodiment.

【図4】第4実施例の平面図である。FIG. 4 is a plan view of a fourth embodiment.

【図5】第5実施例の平面図である。FIG. 5 is a plan view of a fifth embodiment.

【図6】ボート上に載置された従来のウェーハボートの
1例を示す斜視図である。
FIG. 6 is a perspective view showing an example of a conventional wafer boat mounted on a boat.

【符号の説明】[Explanation of symbols]

1 ボート 2 支持部(溝部) 3A リング状のSiC製支持板 3B 中央部4が凹状のSiC製支持板 5 ウェーハ 6A ウェーハ吸着プレート逃げ用切欠き 6B ウェーハ吸着プレート逃げ用切欠き 7 位置決め部(棒) DESCRIPTION OF SYMBOLS 1 boat 2 support part (groove part) 3A ring-shaped support plate made of SiC 3B SiC support plate having a concave central part 4 5 wafer 6A notch for escape of wafer suction plate 6B notch for escape of wafer suction plate 7 positioning part (rod) )

フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/22 511 G 9278−4M Continuation of the front page (51) Int.Cl. 6 Identification number Reference number within the agency FI Technical display area H01L 21/22 511 G 9278-4M

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ボートの支持部に、リング状又は中央部
が凹状のSiC製支持板を設置し、ウェーハ周辺を保持
することを特徴とするウェーハホルダ。
1. A wafer holder characterized in that a ring-shaped or central concave support plate made of SiC is installed on a support part of a boat to hold the periphery of the wafer.
【請求項2】 支持板に、ウェーハ吸着プレート逃げ用
切欠きを有する請求項1のウェーハホルダ。
2. The wafer holder according to claim 1, wherein the support plate has a notch for evacuating the wafer suction plate.
【請求項3】 支持板に位置決め用部を有する請求項1
のウェーハホルダ。
3. The supporting plate has a positioning portion.
Wafer holder.
JP18845293A 1993-07-29 1993-07-29 Wafer holder Pending JPH0745691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18845293A JPH0745691A (en) 1993-07-29 1993-07-29 Wafer holder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18845293A JPH0745691A (en) 1993-07-29 1993-07-29 Wafer holder

Publications (1)

Publication Number Publication Date
JPH0745691A true JPH0745691A (en) 1995-02-14

Family

ID=16223950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18845293A Pending JPH0745691A (en) 1993-07-29 1993-07-29 Wafer holder

Country Status (1)

Country Link
JP (1) JPH0745691A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996028843A1 (en) * 1995-03-13 1996-09-19 Tokyo Electron Limited Heat-treating apparatus
WO1997032339A1 (en) * 1996-02-29 1997-09-04 Tokyo Electron Limited Heat-treating boat for semiconductor wafer
WO2001018856A1 (en) * 1999-09-03 2001-03-15 Mitsubishi Materials Silicon Corporation Wafer holder
EP1091391A1 (en) * 1999-10-05 2001-04-11 SICO Produktions- und Handelsges.m.b.H. Wafers holding boat
EP1253631A1 (en) * 2000-10-16 2002-10-30 Nippon Steel Corporation Wafer holder, wafer support member, wafer holding device, and heat treating furnace
KR100366263B1 (en) * 1999-11-09 2002-12-31 코닉 시스템 주식회사 Fabrication method of wafer guard ring with enhanced toughness for a thermal shock
US6780251B2 (en) 2001-07-19 2004-08-24 Hitachi Kokusai Electric, Inc. Substrate processing apparatus and method for fabricating semiconductor device
US6799940B2 (en) 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor
KR100492977B1 (en) * 2002-12-12 2005-06-07 삼성전자주식회사 Wafer boats for consolidation of porous silica layer
JP2006303512A (en) * 2006-04-27 2006-11-02 Hitachi Kokusai Electric Inc Semiconductor manufacturing apparatus and method, and boat
EP1993123A3 (en) * 1997-12-26 2009-06-10 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
US7665367B2 (en) 2007-01-29 2010-02-23 Asahi Glass Company, Limited Method and apparatus for measuring shape of heat treatment jig
JP2010199618A (en) * 2010-05-18 2010-09-09 Hitachi Kokusai Electric Inc Semiconductor manufacturing apparatus, semiconductor manufacturing method and boat
US8028978B2 (en) * 1996-07-15 2011-10-04 Semitool, Inc. Wafer handling system

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031205A (en) * 1995-03-13 2000-02-29 Tokyo Electron Limited Thermal treatment apparatus with thermal protection members intercepting thermal radiation at or above a predetermined angle
WO1996028843A1 (en) * 1995-03-13 1996-09-19 Tokyo Electron Limited Heat-treating apparatus
WO1997032339A1 (en) * 1996-02-29 1997-09-04 Tokyo Electron Limited Heat-treating boat for semiconductor wafer
US6062853A (en) * 1996-02-29 2000-05-16 Tokyo Electron Limited Heat-treating boat for semiconductor wafers
US8028978B2 (en) * 1996-07-15 2011-10-04 Semitool, Inc. Wafer handling system
EP1993123A3 (en) * 1997-12-26 2009-06-10 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
WO2001018856A1 (en) * 1999-09-03 2001-03-15 Mitsubishi Materials Silicon Corporation Wafer holder
EP1091391A1 (en) * 1999-10-05 2001-04-11 SICO Produktions- und Handelsges.m.b.H. Wafers holding boat
WO2001026140A1 (en) * 1999-10-05 2001-04-12 Sico Produktions- Und Handelsges.M.B.H. Holding device for semi-conductor disks
JP2003521109A (en) * 1999-10-05 2003-07-08 ジーコ・プロドゥクツィオーンス−ウント・ハンデルスゲゼルシャフト・エム・ベー・ハー Semiconductor wafer holding device
KR100366263B1 (en) * 1999-11-09 2002-12-31 코닉 시스템 주식회사 Fabrication method of wafer guard ring with enhanced toughness for a thermal shock
EP1253631A4 (en) * 2000-10-16 2009-06-10 Nippon Steel Corp Wafer holder, wafer support member, wafer holding device, and heat treating furnace
EP1253631A1 (en) * 2000-10-16 2002-10-30 Nippon Steel Corporation Wafer holder, wafer support member, wafer holding device, and heat treating furnace
US6780251B2 (en) 2001-07-19 2004-08-24 Hitachi Kokusai Electric, Inc. Substrate processing apparatus and method for fabricating semiconductor device
US6799940B2 (en) 2002-12-05 2004-10-05 Tokyo Electron Limited Removable semiconductor wafer susceptor
KR100492977B1 (en) * 2002-12-12 2005-06-07 삼성전자주식회사 Wafer boats for consolidation of porous silica layer
JP2006303512A (en) * 2006-04-27 2006-11-02 Hitachi Kokusai Electric Inc Semiconductor manufacturing apparatus and method, and boat
US7665367B2 (en) 2007-01-29 2010-02-23 Asahi Glass Company, Limited Method and apparatus for measuring shape of heat treatment jig
JP2010199618A (en) * 2010-05-18 2010-09-09 Hitachi Kokusai Electric Inc Semiconductor manufacturing apparatus, semiconductor manufacturing method and boat

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