CN109341343A - A kind of high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor - Google Patents
A kind of high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor Download PDFInfo
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- CN109341343A CN109341343A CN201811099470.2A CN201811099470A CN109341343A CN 109341343 A CN109341343 A CN 109341343A CN 201811099470 A CN201811099470 A CN 201811099470A CN 109341343 A CN109341343 A CN 109341343A
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- China
- Prior art keywords
- wall
- reaction tube
- isolation cover
- process gas
- silicon carbide
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Furnace Details (AREA)
Abstract
The invention discloses a kind of high-temperature heating furnace bodies suitable for manufacturing silicon carbide semiconductor, including furnace shell, burner hearth is equipped in furnace shell, the burner hearth bottom is equipped with reaction tube, and the isolation cover for reaction tube and the burner hearth to be isolated, it is equipped between the isolation cover bottom and the furnace shell inner wall and shield closure is isolated, the furnace shell bottom is equipped with process gas inlets and process gas outlet, the process gas inlets are connected to the reaction tube, the reaction tube is connected to the isolation cover, the process gas outlet is located at below the isolation shield closure and is connected to the isolation cover.The present invention has many advantages, such as that cleanliness is high, is suitable for manufacturing silicon carbide semiconductor.
Description
Technical field
The present invention relates to semiconductor production equipment technical field more particularly to a kind of high temperature suitable for manufacturing silicon carbide semiconductor
Heating furnace body.
Background technique
Silicon carbide (SiC) semiconductor is semiconductor material with wide forbidden band, with superior electric property, including broad stopband,
High critical breakdown electric field, high saturation drift velocity and highly thermally conductive are the high temperature for making high quality, high frequency, anti-radiation, high-power solid
The ideal material of state Microwave Device and Circuitry is the first choice " successor " of power semiconductor field silicon (Si) material.SiC high temperature oxygen
Change equipment and SiC high temperature annealing equipment is the important production equipment in silicon carbide (SiC) semiconductor industry chain, needs temperature uniform
High-cleanness, high, high temperature (be greater than 1200 DEG C) heating furnace environment, very high requirement is proposed for the furnace body manufacture of equipment.It passes
The furnace body of system is difficult to meet the requirement of high-cleanness, high, such as the heating material used in burner hearth is mostly graphite or tungsten, these materials
It is easy to oxidize at high temperature.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, provide that a kind of cleanliness is high, is suitable for carbon
The high-temperature heating furnace body of SiClx semiconductor.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor, including furnace shell, furnace shell is interior to be equipped with burner hearth, the burner hearth
Bottom is equipped with reaction tube and the isolation cover for reaction tube and the burner hearth to be isolated, the isolation cover bottom and the furnace shell
Isolation shield closure is equipped between inner wall, the furnace shell bottom is equipped with process gas inlets and process gas outlet, the technique
Gas feed is connected to the reaction tube, and the reaction tube is connected to the isolation cover, and the process gas outlet is located at described
It is connected to below isolation shield closure and with the isolation cover.
As a further improvement of the above technical scheme: the reaction tube open upper end simultaneously has with the isolation cover top
Gap, has gap between the reaction pipe outer wall and the isolation cover inner wall, the process gas outlet is set to the reaction
Gap location between pipe outer wall and the isolation cover inner wall.
As a further improvement of the above technical scheme: the isolation cover and the reaction tube are coaxially arranged, the burner hearth
Top lifts having heaters, and the heater is located at the isolation cover periphery.
As a further improvement of the above technical scheme: be provided with through-hole on the reaction tube, the reaction pipe outer wall with
There is gap, the process gas outlet is set to the reaction pipe outer wall and the isolation cover inner wall between the isolation cover inner wall
Between gap location.
As a further improvement of the above technical scheme: the furnace shell includes wing furnace wall, upper bell and lower bell, institute
It states and is equipped with workpiece supporting plate below lower bell and is equipped with workpiece supporting plate sealing element between the two, the wing furnace wall and the upper bell are equal
Configured with insulating layer, it is successively arranged thermal insulating seat and work support above the workpiece supporting plate, the lower bell is located at the heat preservation
Seat periphery, the isolation cover, the reaction tube and the process gas outlet be located on the lower bell, the thermal insulating seat with
Work support is located in the reaction tube, and the process gas inlets run through the workpiece supporting plate and thermal insulating seat.
As a further improvement of the above technical scheme: wing furnace wall lower part is equipped with ramp, the lower bell top
Equipped with lower inclined plane, the ramp and the lower inclined plane constitute V-type groove, and the isolation shield closure is located at outside the isolation cover
Between wall and the V-type groove.
As a further improvement of the above technical scheme: the wing furnace wall is equipped with the protective gas being connected to the burner hearth
Import and protective gas outlet.
As a further improvement of the above technical scheme: the top of the wing furnace wall, the lower part of wing furnace wall and upper bell
On be equipped with thermometric interface for measuring temperature in the burner hearth.
Compared with the prior art, the advantages of the present invention are as follows: the high temperature disclosed by the invention suitable for manufacturing silicon carbide semiconductor
Reaction tube is arranged in heating furnace body in burner hearth, and isolation cover is arranged, reaction tube is isolated with burner hearth, isolation cover bottom and furnace
Setting isolation shield closure between shell inner wall, can be to avoid being generated in burner hearth in manufacturing silicon carbide semiconductor technical process due to high temperature
Unholiness gas enter in reaction tube, thereby may be ensured that cleanliness with higher in reaction tube；Process gas can pass through
The process gas inlets of furnace shell bottom enter in reaction tube, then enter in isolation cover from reaction tube, finally enter from isolation cover
The process gas outlet of furnace shell bottom realizes the discharge of process gas.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the high-temperature heating furnace body that the present invention is suitable for manufacturing silicon carbide semiconductor.
Fig. 2 is the partial enlarged view in Fig. 1 at A.
Each label indicates in figure: 1, furnace shell；11, burner hearth；12, process gas inlets；13, process gas outlet；14, wing furnace
Wall；141, ramp；142, protective gas import；143, protective gas exports；15, upper bell；16, lower bell；161, oblique
Face；17, insulating layer；2, reaction tube；3, isolation cover；4, shield closure is isolated；5, heater；6, workpiece supporting plate；61, thermal insulating seat；
62, work support；63, workpiece supporting plate sealing element；7, thermometric interface.
Specific embodiment
Below in conjunction with Figure of description and specific embodiment, invention is further described in detail.
A kind of embodiment of the Fig. 1 to the high-temperature heating furnace body for being suitable for manufacturing silicon carbide semiconductor Fig. 2 shows the present invention, this reality
The high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor of example, including furnace shell 1 are applied, is equipped with burner hearth 11,11 bottom of burner hearth in furnace shell 1
Isolation cover 3 equipped with reaction tube 2 and for reaction tube 2 and burner hearth 11 to be isolated is set between 1 inner wall of 3 bottom of isolation cover and furnace shell
Have isolation shield closure 4,1 bottom of furnace shell be equipped with process gas inlets 12 and process gas outlet 13, process gas inlets 12 with
Reaction tube 2 is connected to, and reaction tube 2 be connected to isolation cover 3, process gas outlet 13 be located at be isolated below shield closure 4 and be isolated
3 connection of cover.
Reaction tube 2 is arranged in the high-temperature heating furnace body for being suitable for manufacturing silicon carbide semiconductor in burner hearth 11, can be set to workpiece
In reaction tube 2, and isolation cover 3 is set, reaction tube 2 is isolated with burner hearth 11, is set between 1 inner wall of 3 bottom of isolation cover and furnace shell
Isolation shield closure 4 is set, it can be unholiness to avoid being generated in burner hearth 11 in manufacturing silicon carbide semiconductor technical process due to high temperature
Gas enters in reaction tube 2, thereby may be ensured that cleanliness with higher in reaction tube 2；Process gas can pass through 1 bottom of furnace shell
The process gas inlets 12 in portion enter in reaction tube 2, then enter in isolation cover 3 from reaction tube 2, finally enter from isolation cover 3
The process gas outlet 13 of 1 bottom of furnace shell, realizes the discharge of process gas.
As a preferred technical solution, in the present embodiment, 2 open upper end of reaction tube and at the top of isolation cover 3 have gap,
Namely connection is realized in the gap between reaction tube 2 and isolation cover 3 by top, is had between 3 inner wall of 2 outer wall of reaction tube and isolation cover
There is gap, the gap location namely process gas that process gas outlet 13 is set between 3 inner wall of 2 outer wall of reaction tube and isolation cover go out
Mouth 13 realizes the connection with isolation cover 3 by the gap between 3 side wall of reaction tube 2 and isolation cover.In use, process gas passes through
The process gas inlets 12 of 1 bottom of furnace shell enter in reaction tube 2, then enter in isolation cover 3 at the top of reaction tube 2, finally from
Gap between 2 outer wall of 3 inner wall of isolation cover and reaction tube enters the process gas outlet 13 of 1 bottom of furnace shell, realizes process gas
Discharge, structure is simple, novel.Certainly in other embodiments, through-hole can also be arranged on reaction tube 2 to realize and isolation cover 3
Connection, but will increase the manufacture difficulty and cost of reaction tube 2.
Further, isolation cover 3 and reaction tube 2 are coaxially arranged, and isolation cover 3 is tubular structure, 11 top of burner hearth in other words
(on specially upper bell 15) lifting having heaters 5, heater 5 are located at 3 periphery of isolation cover.In the present embodiment, heater 5 adds
Pyrogen reason is identical as existing electric heater, but by arranging it along 3 periphery of isolation cover, advantageously ensures that in reaction tube 2
The uniformity of temperature everywhere.
Further, in this embodiment furnace shell 1 includes wing furnace wall 14, upper bell 15 and lower bell 16, as preferred
Technical solution, wing furnace wall 14, upper bell 15 and lower bell 16 are connected and fixed using threaded fastener, closed to surround
Space is equipped with workpiece supporting plate 6 below lower bell 16 and is equipped with workpiece supporting plate sealing element 63 between the two, utilizes the sealing of workpiece supporting plate
Part 63 guarantees the leakproofness at the two faying face, and wing furnace wall 14 and upper bell 15 are each equipped with insulating layer 17,6 top of workpiece supporting plate
It is successively arranged thermal insulating seat 61 and work support 62, workpiece supporting plate 6 can configure the lifting that the mechanisms such as screw pair realize workpiece, under
Bell 16 is located at 61 periphery of thermal insulating seat, and isolation cover 3, reaction tube 2 and process gas outlet 13 are located on lower bell 16, thermal insulating seat
61 and work support 62 be located in reaction tube 2, process gas inlets 12 run through workpiece supporting plate 6 and thermal insulating seat 61.
Further, in the present embodiment, 14 lower part of wing furnace wall is equipped with ramp 141, and lower 16 top of bell is equipped with oblique
Face 161, ramp 141 and lower inclined plane 161 constitute V-type groove, isolation shield closure 4 be located at 3 outer wall of isolation cover and V-type groove it
Between.It is common using the ramp 141 of 14 lower part of wing furnace wall, the lower inclined plane 161 on 16 top of lower bell and 3 outer wall three of isolation cover
It squeezes isolation shield closure 4 and reaches good sealing effect, so that 3 inside of isolation cover and burner hearth 11 be kept apart, and be convenient for
Processing, assembly.Wherein, each sealing element can be common O-ring seal etc..
Further, in the present embodiment, wing furnace wall 14 is equipped with the protective gas import 142 being connected to burner hearth 11 and protects
Protect gas vent 143.In technical process, can by burner hearth 11 input protective gas or vacuumize to heater 5 into
Row protection, avoids oxidation at high temperatures.
Further, it in the present embodiment, is all provided on the top of wing furnace wall 14, the lower part of wing furnace wall 14 and upper bell 15
There is the thermometric interface 7 for measuring temperature in burner hearth 11.It can be to the temperature in burner hearth 11 everywhere by the thermometric interface 7 of three positions
Degree measures.
Although the present invention has been disclosed as a preferred embodiment, however, it is not intended to limit the invention.It is any to be familiar with ability
The technical staff in domain, without deviating from the scope of the technical scheme of the present invention, all using the technology contents pair of the disclosure above
Technical solution of the present invention makes many possible changes and modifications or equivalent example modified to equivalent change.Therefore, all
Without departing from the content of technical solution of the present invention, according to the present invention technical spirit any simple modification made to the above embodiment,
Equivalent variations and modification, all shall fall within the protection scope of the technical scheme of the invention.
Claims (8)
1. a kind of high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor, including furnace shell (1), furnace shell (1) is interior to be equipped with burner hearth (11),
It is characterized by: burner hearth (11) bottom is equipped with reaction tube (2) and for reaction tube (2) and the burner hearth (11) to be isolated
Isolation cover (3), between isolation cover (3) bottom and the furnace shell (1) inner wall be equipped with shield closure (4), the furnace is isolated
Shell (1) bottom be equipped with process gas inlets (12) and process gas outlet (13), the process gas inlets (12) and it is described instead
(2) connection should be managed, the reaction tube (2) is connected to the isolation cover (3), and the process gas outlet (13) is located at the isolation
It is connected to below shield closure (4) and with the isolation cover (3).
2. the high-temperature heating furnace body according to claim 1 suitable for manufacturing silicon carbide semiconductor, it is characterised in that: the reaction
It manages (2) open upper end and there is gap with the isolation cover (3) top, reaction tube (2) outer wall and the isolation cover (3) are interior
There is gap between wall, the process gas outlet (13) be set to the reaction tube (2) outer wall and the isolation cover (3) inner wall it
Between gap location.
3. the high-temperature heating furnace body according to claim 2 suitable for manufacturing silicon carbide semiconductor, it is characterised in that: the isolation
It covers (3) and the reaction tube (2) is coaxially arranged, lift having heaters (5) at the top of the burner hearth (11), heater (5) position
In the isolation cover (3) periphery.
4. the high-temperature heating furnace body according to claim 1 suitable for manufacturing silicon carbide semiconductor, it is characterised in that: the reaction
It is provided with through-hole on pipe (2), there is gap, the process gas between reaction tube (2) outer wall and the isolation cover (3) inner wall
Body exports the gap location that (13) are set between the reaction tube (2) outer wall and the isolation cover (3) inner wall.
5. the high-temperature heating furnace body according to any one of claim 1 to 4 suitable for manufacturing silicon carbide semiconductor, feature exist
In: the furnace shell (1) includes wing furnace wall (14), upper bell (15) and lower bell (16), is equipped with below the lower bell (16)
Workpiece supporting plate (6) and it is equipped with workpiece supporting plate sealing element (63) between the two, the wing furnace wall (14) and the upper bell (15) are
Configured with insulating layer (17), thermal insulating seat (61) and work support (62), the lower furnace are successively arranged above the workpiece supporting plate (6)
Lid (16) is located at the thermal insulating seat (61) periphery, the isolation cover (3), the reaction tube (2) and the process gas outlet
(13) it is located on the lower bell (16), the thermal insulating seat (61) and work support (62) are located in the reaction tube (2), described
Process gas inlets (12) run through the workpiece supporting plate (6) and thermal insulating seat (61).
6. the high-temperature heating furnace body according to claim 5 suitable for manufacturing silicon carbide semiconductor, it is characterised in that: the wing furnace
Wall (14) lower part be equipped with ramp (141), lower bell (16) top be equipped with lower inclined plane (161), the ramp (141) and
The lower inclined plane (161) constitutes V-type groove, and the isolation shield closure (4) is located at the isolation cover (3) outer wall and the V-type
Between groove.
7. the high-temperature heating furnace body according to claim 5 suitable for manufacturing silicon carbide semiconductor, it is characterised in that: the wing furnace
Wall (14) is equipped with the protective gas import (142) being connected to the burner hearth (11) and protective gas outlet (143).
8. the high-temperature heating furnace body according to claim 5 suitable for manufacturing silicon carbide semiconductor, it is characterised in that: the wing furnace
It is equipped on the top of wall (14), the lower part of wing furnace wall (14) and upper bell (15) for measuring the burner hearth (11) interior temperature
Thermometric interface (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811099470.2A CN109341343A (en) | 2018-09-20 | 2018-09-20 | A kind of high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811099470.2A CN109341343A (en) | 2018-09-20 | 2018-09-20 | A kind of high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109341343A true CN109341343A (en) | 2019-02-15 |
Family
ID=65305759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811099470.2A Pending CN109341343A (en) | 2018-09-20 | 2018-09-20 | A kind of high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109341343A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111520999A (en) * | 2020-04-14 | 2020-08-11 | 北京北方华创微电子装备有限公司 | Vertical furnace equipment |
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| JPH08250444A (en) * | 1995-03-13 | 1996-09-27 | Tokyo Electron Ltd | Heat-treating device |
| CN2709905Y (en) * | 2003-11-17 | 2005-07-13 | 株洲科泰感应加热设备有限公司 | Bell multi-firepot induction heating furnace |
| CN202056920U (en) * | 2011-01-18 | 2011-11-30 | 周开根 | Solid fuel gasification combustion equipment and boiler |
| CN102364279A (en) * | 2011-10-26 | 2012-02-29 | 南京长江工业炉科技有限公司 | Preheating furnace for multichamber die |
| WO2013007614A1 (en) * | 2011-07-08 | 2013-01-17 | Rec Wafer Norway As | Furnace for semiconductor material and method |
| CN203530428U (en) * | 2013-10-29 | 2014-04-09 | 成都润封电碳有限公司 | Vapor deposition furnace for coating silicon carbide on large-scale graphite sleeve |
| CN104016349A (en) * | 2014-05-29 | 2014-09-03 | 姚迅 | Production apparatus and production method for polysilicon rod |
| CN104990411A (en) * | 2015-07-06 | 2015-10-21 | 中国核电工程有限公司 | Heating furnace structure |
-
2018
- 2018-09-20 CN CN201811099470.2A patent/CN109341343A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08250444A (en) * | 1995-03-13 | 1996-09-27 | Tokyo Electron Ltd | Heat-treating device |
| CN2709905Y (en) * | 2003-11-17 | 2005-07-13 | 株洲科泰感应加热设备有限公司 | Bell multi-firepot induction heating furnace |
| CN202056920U (en) * | 2011-01-18 | 2011-11-30 | 周开根 | Solid fuel gasification combustion equipment and boiler |
| WO2013007614A1 (en) * | 2011-07-08 | 2013-01-17 | Rec Wafer Norway As | Furnace for semiconductor material and method |
| CN102364279A (en) * | 2011-10-26 | 2012-02-29 | 南京长江工业炉科技有限公司 | Preheating furnace for multichamber die |
| CN203530428U (en) * | 2013-10-29 | 2014-04-09 | 成都润封电碳有限公司 | Vapor deposition furnace for coating silicon carbide on large-scale graphite sleeve |
| CN104016349A (en) * | 2014-05-29 | 2014-09-03 | 姚迅 | Production apparatus and production method for polysilicon rod |
| CN104990411A (en) * | 2015-07-06 | 2015-10-21 | 中国核电工程有限公司 | Heating furnace structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111520999A (en) * | 2020-04-14 | 2020-08-11 | 北京北方华创微电子装备有限公司 | Vertical furnace equipment |
| CN111520999B (en) * | 2020-04-14 | 2022-02-22 | 北京北方华创微电子装备有限公司 | Vertical furnace equipment |
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Application publication date: 20190215 |
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| RJ01 | Rejection of invention patent application after publication |