JPS62262420A - Method of sealing heat resisting tube for heating semiconductor - Google Patents

Method of sealing heat resisting tube for heating semiconductor

Info

Publication number
JPS62262420A
JPS62262420A JP10473086A JP10473086A JPS62262420A JP S62262420 A JPS62262420 A JP S62262420A JP 10473086 A JP10473086 A JP 10473086A JP 10473086 A JP10473086 A JP 10473086A JP S62262420 A JPS62262420 A JP S62262420A
Authority
JP
Japan
Prior art keywords
tube
groove
heat
cover
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10473086A
Other languages
Japanese (ja)
Inventor
Akiyuki Furuya
古屋 明雪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10473086A priority Critical patent/JPS62262420A/en
Publication of JPS62262420A publication Critical patent/JPS62262420A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent gas from leaking from a quartz tube and penetrating into a clean room, by providing a groove on the fitting portions between the quartz tube and its cover, CONSTITUTION:A cover 4 of quartz 4 is fitted on a tapered and flat-spotted portion 3 of a quartz tube 1. An exhaust port 5 is provided at the center of the cover 4 so that gas introduced into the quartz tube 1 is discharged through the exhaust port 5. A groove 6 is formed around the outer periphery of the flat-spotted portion 3 such that a part of the groove 6 is extended to the outside of the cover. The portion of the groove 6 extending to the outside of the cover enables the introduced gas to flow out of the tube. In this manner, the tube is allowed to have improved hermetic properties and the gas can be effectively prevented from leaking from the tube and entering into a clean.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、半導体素子の製造工程に不可欠な加熱炉と併
用する耐熱性筒体のシール方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for sealing a heat-resistant cylindrical body that is used in combination with a heating furnace that is essential in the manufacturing process of semiconductor devices.

(従来の技術) 最近、半導体製品の生産規模はますます増大の傾向にあ
り、このために生産性の高い製造ラインの確立が求めら
れており、その−環として、半導体ウェーハも大口径化
の方向にある。
(Conventional technology) Recently, the scale of production of semiconductor products has been increasing, and for this reason, there is a need to establish highly productive manufacturing lines.As part of this, semiconductor wafers are also becoming larger in diameter. in the direction.

このような傾向により、人手によるハンドリングは困難
となり半導体ウェーハの搬送や装置へのセツティング等
は必然的に自動化が必要となってくる。
Due to this tendency, manual handling becomes difficult, and automation of semiconductor wafer transportation, setting in equipment, etc. is inevitably required.

一方、超LSIに代表されるように最近の半導体デバイ
スは高集積化、高性能化の方向を辿っており、これに伴
って製造プロセスは複離多岐にわたっており、製造ライ
ンの清浄度が少滴りに与える影響も大きく、じんあいの
発生源である人体を遠ざける意味からも自動化の意義は
大きい。
On the other hand, recent semiconductor devices, as exemplified by VLSI, are trending toward higher integration and higher performance, and as a result, the manufacturing process has become more diverse, and the cleanliness of the manufacturing line has become less clean. Automation is also of great significance in that it can have a large impact on the environment, and it can also keep away from the human body, which is the source of dust.

ところで製造ラインの清浄度が半導体素子の少滴りに影
響を与える度合いが増している昨今では。
Nowadays, however, the cleanliness of the manufacturing line is increasingly affecting the amount of dripping from semiconductor devices.

いわゆるソフトランダが開発され実用化の段階に入って
いるほかに、耐熱管ならびに蓋体の洗滌にも工夫が加え
られている。すなわち、耐熱管に嵌合した蓋体をクリー
ンルーム内に位置させその洗滌に当ってはクリーンルー
ム外に配置する加熱炉の開口部から蓋体と一体化した耐
熱管を取出してクリーンルーム内の汚染を防いでいる。
A so-called soft lander has been developed and is now in practical use, and improvements have also been made to the cleaning of heat-resistant tubes and lids. In other words, the lid fitted to the heat-resistant tube is placed inside the clean room, and when cleaning it, the heat-resistant tube integrated with the lid is taken out from the opening of the heating furnace located outside the clean room to prevent contamination within the clean room. I'm here.

半導体ウェーハの製造工程に不可欠な拡散炉等の加熱設
備ではヒータ等の加熱源を埋設した断熱性管体を準備し
、こ\に耐熱管を挿入可能とするが、被加熱体である半
導体ウェーハの不純物による汚染を防止するために半導
体表面の安定化物質と化学的成分や性質が近似した材料
である石英ならびにSiCが選択されている。゛ 前記断熱性管体に配置される耐熱管10は第3図に示す
ようにその端末に同材質からなる蓋体10を設け、この
両者10.11の端末部に形成するテーパ部12によっ
て両者を一体とすると共にその嵌合部には摺り合せ加工
を施して滑らかにして着脱を助ける手段が採られている
In heating equipment such as diffusion furnaces that are essential to the semiconductor wafer manufacturing process, an insulating tube with a heating source such as a heater buried inside is prepared, into which a heat-resistant tube can be inserted, but the semiconductor wafer, which is the object to be heated, In order to prevent contamination by impurities, quartz and SiC, which are materials similar in chemical composition and properties to those of the stabilizing substance on the semiconductor surface, are selected.゛As shown in Fig. 3, the heat-resistant tube 10 disposed in the heat-insulating tube body is provided with a lid 10 made of the same material at its end, and a tapered portion 12 formed at the end of both 10 and 11 connects both. In addition, the fitting portion is rubbed to make it smooth and easy to attach and detach.

更に、加熱処理に必要な気体は蓋体10のはゾ中心部に
設けた開孔部13から排出する構造となっており、把手
14も設置されている。
Further, the gas required for heat treatment is discharged from an opening 13 provided at the center of the lid 10, and a handle 14 is also provided.

(発明が解決しようとする問題点) 前述のようにクリーンルーム内の清浄度を保持するため
、耐熱管を利用した熱処理工程ではそのシールを確実に
する必要がある。従って耐熱管と蓋体の嵌合部にOリン
グを適用し更に高温度によるその劣化を防止するためそ
の外周に水冷機構を付設する構造も考えられるが、熱処
理に必要な約1000℃による昇温に耐えるOリング材
質は今のところ見当らない。
(Problems to be Solved by the Invention) As mentioned above, in order to maintain the cleanliness inside the clean room, it is necessary to ensure the sealing in the heat treatment process using heat-resistant tubes. Therefore, a structure could be considered in which an O-ring is applied to the fitting part of the heat-resistant tube and the lid body, and a water-cooling mechanism is attached to the outer periphery of the O-ring to prevent deterioration due to high temperatures. At present, there is no O-ring material that can withstand this.

更に、耐熱管と蓋体の嵌合部には摺り合せ加工を施しか
つテーパ部を設けてその着脱を容易にしているのは前述
の通りであるが、材質に石英を使用するとこの摺り合せ
加工は精密にできないためその気密性は充分でない。
Furthermore, as mentioned above, the fitting part between the heat-resistant tube and the lid body is subjected to a sliding process and a tapered part is provided to facilitate attachment and detachment, but when quartz is used as a material, this sliding process Since it cannot be made precisely, its airtightness is not sufficient.

一方、耐熱管を利用した熱処理工程では塩酸等クリーン
ルーム内に漏洩させたくない材料を使用する頻度が大き
いが、摺り合せ加工部の気密性が充分でないためにどう
しても漏洩する難点は否めない。
On the other hand, in the heat treatment process using heat-resistant tubes, materials such as hydrochloric acid that do not want to leak into the clean room are often used, but there is an undeniable drawback that leakage is inevitable because the airtightness of the rubbed part is not sufficient.

更に、耐熱管と蓋体の嵌合状態は1対1に対応して良好
な状態にしてもすべてのものに共通した状況を再現する
ことは難がしくクリーンルーム内へのガス漏洩を生じる
欠点がある。
Furthermore, even if the fit between the heat-resistant tube and the lid is in good condition with a one-to-one correspondence, it is difficult to reproduce a common situation for all, and there is a drawback that gas leaks into the clean room. be.

〔発明の構成〕[Structure of the invention]

(問題点を解決するための手段) 本発明に係る半導体加熱用耐熱管のシール方法では耐熱
管の端末部分に設けるテーパ部に蓋体を嵌合してシール
し、この嵌合部に形成した摺り合せ加工部には蓋体外に
導出する溝を設置し、この溝に耐熱管内で使用する有害
気体を吸引する機構を付設可能とする方法を採用した。
(Means for Solving the Problems) In the method for sealing a heat-resistant tube for semiconductor heating according to the present invention, a lid body is fitted into a tapered portion provided at the end portion of the heat-resistant tube for sealing. A groove was installed in the sliding part to lead out of the lid body, and a method was adopted in which a mechanism for suctioning harmful gases used in the heat-resistant tube could be attached to this groove.

(作 用) 本発明の一端を封止した半導体加熱用耐熱管のシール方
法は外挿する蓋体との嵌合部にテーパ部を形成すると共
に摺り合せ加工を施し、更にOリングを設置する溝をこ
の嵌合部に設けその端末を蓋体外に導出する。この溝端
末に気体吸引機構を付設しこれをクリーンルームに設け
られるダクトに接続する。この結果耐熱管に導入され、
しかもクリーンルーム内に漏洩すると有害な塩化水素等
が高温下でこの溝を通じて排出され、クリーンルームの
清浄度を一定に保持しひいては半導体素子の少滴り向上
に資することになる。
(Function) The method of sealing the heat-resistant tube for semiconductor heating with one end sealed according to the present invention involves forming a tapered part at the fitting part with the outer lid, applying a sliding process, and further installing an O-ring. A groove is provided in this fitting part, and the end thereof is guided out of the lid body. A gas suction mechanism is attached to the end of this groove and connected to a duct provided in the clean room. As a result, it was introduced into heat-resistant tubes,
Moreover, if leaked into the clean room, harmful hydrogen chloride, etc., will be discharged through this groove at high temperatures, which will maintain the cleanliness of the clean room at a constant level and contribute to reducing the amount of dripping of semiconductor devices.

(実施例) 第1図に示すように耐熱管すなわち石英管1は通常11
00n乃至300 mmの内径を持ち、その一端を密封
し、外径5nm〜20nnの気体導入管が溶着されてお
り、(図示せず)他端にはテーパ部2を設けその外周に
は摺り合せ加工を施した部分3を形成する。
(Example) As shown in FIG.
It has an inner diameter of 00 nm to 300 mm, one end of which is sealed, a gas introduction tube with an outer diameter of 5 nm to 20 nm is welded to it, and a tapered part 2 is provided at the other end (not shown), and the outer periphery has a tapered part 2. A processed portion 3 is formed.

この石英管のテーパをつけた摺り合せ加工部3には石英
製の蓋体4を嵌め合せ、中央部にはこの石英管1内に導
入する気体の排出口5が設けられており、更に石英管1
の摺り合せ部3に対応する位置に同様な摺り合せ部を形
成する。
A lid 4 made of quartz is fitted into the tapered sliding part 3 of this quartz tube, and an outlet 5 for gas introduced into the quartz tube 1 is provided in the center. tube 1
A similar sliding portion is formed at a position corresponding to the sliding portion 3 of.

この店り合せ加工を施した部分3には溝6をその外周に
わたって形成しその一部7を蓋体4の外部に導出する。
A groove 6 is formed over the outer periphery of the part 3 subjected to this matching process, and a part 7 of the groove 6 is led out to the outside of the lid body 4.

この外周を囲む溝6にはOリング8を設置して石英管1
との気密性を維持し、蓋体4外に導出する溝6からは導
入気体の流出を図り、このため二\に気体吸引機構9を
付設しクリーンルームに必ず取付けるダクトに連結する
。この溝6の設置によって石英管1と蓋体4の嵌合部に
施される摺り合せ加工の不充分な気密性を補うことが可
能となる。
An O-ring 8 is installed in the groove 6 surrounding the outer periphery of the quartz tube 1.
The introduced gas is designed to flow out from the groove 6 led out of the lid body 4 while maintaining airtightness with the lid body 4. For this purpose, a gas suction mechanism 9 is attached to the second part and connected to a duct that is always installed in the clean room. The provision of this groove 6 makes it possible to compensate for insufficient airtightness due to the sliding process applied to the fitting portion of the quartz tube 1 and the lid body 4.

尚温度上昇に伴う○リングの機能劣化を防ぐために水冷
機溝を蓋体4に付設可能であることは勿論である。又第
2図に示すように石英管1端末にフランジ部10を設け
る方式も可能である。
Of course, a water cooler groove can be added to the lid 4 in order to prevent functional deterioration of the ○ ring due to temperature rise. Further, as shown in FIG. 2, it is also possible to provide a flange portion 10 at the end of the quartz tube 1.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明方法にあっては石英管と蓋体の嵌合
部分に溝を形成することによってその気密性を向上させ
クリーンルーム内への不所望な気体漏洩を防止する。
As described above, in the method of the present invention, by forming a groove in the fitting portion of the quartz tube and the lid, the airtightness thereof is improved and undesired gas leakage into the clean room is prevented.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は本発明方法を実施するのに適用する
装置の一部を示す断面図、第3図は従来方法に使用する
装置の断面図である。
1 and 2 are cross-sectional views showing a part of the apparatus applied to carry out the method of the present invention, and FIG. 3 is a cross-sectional view of the apparatus used in the conventional method.

Claims (1)

【特許請求の範囲】[Claims]  加熱源を配置する断熱性管体に挿入する一端を封止し
た半導体加熱用耐熱性筒体端末付近に耐熱性蓋体を嵌合
してシールし、この嵌合部に形成する摺り合せ加工部に
前記蓋体外に導出する溝を設置することを特徴とする半
導体加熱用耐熱管のシール方法。
A heat-resistant lid body is fitted near the terminal of a heat-resistant cylinder for heating semiconductors with one end sealed, which is inserted into an insulating tube body in which a heating source is arranged, and a sliding part is formed at this fitted part. A method for sealing a heat-resistant tube for semiconductor heating, characterized in that a groove leading out of the lid is installed in the lid.
JP10473086A 1986-05-09 1986-05-09 Method of sealing heat resisting tube for heating semiconductor Pending JPS62262420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10473086A JPS62262420A (en) 1986-05-09 1986-05-09 Method of sealing heat resisting tube for heating semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10473086A JPS62262420A (en) 1986-05-09 1986-05-09 Method of sealing heat resisting tube for heating semiconductor

Publications (1)

Publication Number Publication Date
JPS62262420A true JPS62262420A (en) 1987-11-14

Family

ID=14388614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10473086A Pending JPS62262420A (en) 1986-05-09 1986-05-09 Method of sealing heat resisting tube for heating semiconductor

Country Status (1)

Country Link
JP (1) JPS62262420A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01158725A (en) * 1987-12-15 1989-06-21 Tel Sagami Ltd Heat treatment apparatus
JPH01161829A (en) * 1987-12-18 1989-06-26 Tel Sagami Ltd Heat treating apparatus
JPH01170017A (en) * 1987-12-25 1989-07-05 Toshiba Corp Semiconductor processing device
JPH06326047A (en) * 1994-05-30 1994-11-25 Kokusai Electric Co Ltd Joining section structure of reactant gas feed pipe and reaction pipe of diffusion equipment
CN105508744A (en) * 2016-01-07 2016-04-20 湖州奥博石英科技有限公司 Inclined ground quartz tube structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01158725A (en) * 1987-12-15 1989-06-21 Tel Sagami Ltd Heat treatment apparatus
JPH01161829A (en) * 1987-12-18 1989-06-26 Tel Sagami Ltd Heat treating apparatus
JPH01170017A (en) * 1987-12-25 1989-07-05 Toshiba Corp Semiconductor processing device
JPH06326047A (en) * 1994-05-30 1994-11-25 Kokusai Electric Co Ltd Joining section structure of reactant gas feed pipe and reaction pipe of diffusion equipment
CN105508744A (en) * 2016-01-07 2016-04-20 湖州奥博石英科技有限公司 Inclined ground quartz tube structure

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