JP2003068657A - Device and method for heat treatment - Google Patents

Device and method for heat treatment

Info

Publication number
JP2003068657A
JP2003068657A JP2001257187A JP2001257187A JP2003068657A JP 2003068657 A JP2003068657 A JP 2003068657A JP 2001257187 A JP2001257187 A JP 2001257187A JP 2001257187 A JP2001257187 A JP 2001257187A JP 2003068657 A JP2003068657 A JP 2003068657A
Authority
JP
Japan
Prior art keywords
exhaust port
gas
heat treatment
pipe
exhaust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001257187A
Other languages
Japanese (ja)
Other versions
JP4963336B2 (en
Inventor
Yukimasa Saito
幸正 齋藤
Takanori Saito
孝規 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2001257187A priority Critical patent/JP4963336B2/en
Publication of JP2003068657A publication Critical patent/JP2003068657A/en
Application granted granted Critical
Publication of JP4963336B2 publication Critical patent/JP4963336B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To prevent an object to be treated from being contaminated by particles by suppressing a by-product from being stuck closely to the end face of the air outlet of a treatment vessel. SOLUTION: In a heat treatment device 1 for applying prescribed heat treatment under a prescribed treatment gas environment, while housing a workpiece (w) to be treated in a treatment vessel 2 having an exhaust port 6, an exhaust pipe 7 is connected via an airtight material 29 to an end face 6a of the exhaust port 6, and an inner pipe 41 having a plurality of gas blowout parts 40 for blowing gases out of inner peripheral surfaces for suppressing by-products from sticking close to the end face 6a of the exhaust port 6 is provided within a prescribed range from the inside of the exhaust pipe 7 to the inside of the exhaust port 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、熱処理装置および
熱処理方法に関する。
TECHNICAL FIELD The present invention relates to a heat treatment apparatus and a heat treatment method.

【0002】[0002]

【従来の技術】半導体装置の製造においては、被処理体
例えば半導体ウエハに酸化、拡散、CVD、アニール等
の熱処理を施すための各種の熱処理装置が用いられてい
る。この熱処理装置は、排気口を有する処理容器内に半
導体ウエハを収容して所定の処理ガス雰囲気下で所定の
熱処理例えばCVD処理を施すようになっている。
2. Description of the Related Art In the manufacture of semiconductor devices, various heat treatment apparatuses are used for subjecting an object to be processed such as a semiconductor wafer to heat treatments such as oxidation, diffusion, CVD and annealing. In this heat treatment apparatus, a semiconductor wafer is housed in a processing container having an exhaust port, and a predetermined heat treatment such as a CVD process is performed in a predetermined process gas atmosphere.

【0003】特に、減圧下での処理が可能で、前記排気
口が石英製である場合、前記排気口の端面には気密材と
してのOリングを介して排気管が接続される。具体的に
は、排気口および排気管の接続端にはフランジ部がそれ
ぞれ設けられており、これらフランジ部間にOリングが
介設される。また、この場合、Oリングの熱的劣化を抑
制するために、Oリングの近傍例えば排気管のフランジ
部には冷却部例えば冷却水通路を設ける必要がある。
In particular, when processing under reduced pressure is possible and the exhaust port is made of quartz, an exhaust pipe is connected to the end face of the exhaust port via an O-ring as a hermetic material. Specifically, a flange portion is provided at each of the connection ends of the exhaust port and the exhaust pipe, and an O-ring is provided between these flange portions. Further, in this case, in order to suppress thermal deterioration of the O-ring, it is necessary to provide a cooling unit, for example, a cooling water passage in the vicinity of the O-ring, for example, in the flange portion of the exhaust pipe.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前記熱
処理装置においては、排気口および排気管の接続部(フ
ランジ部)から外部への放熱が多く、排気口の端面付近
の温度が下がっているため、排気口の端面付近に排気中
の処理ガス成分が接触すると、凝結により副生成物とな
って付着し易い。排気口の端面付近が冷却水通路によっ
て積極的に冷却されている場合には、更に副生成物が付
着し易くなる。排気口の端面付近に副生成物が付着し、
この副生成物がパーティクルとなって処理容器内に逆流
すると、半導体ウエハが汚染される恐れがある。
However, in the heat treatment apparatus, a large amount of heat is radiated to the outside from the connecting portion (flange portion) of the exhaust port and the exhaust pipe, and the temperature near the end face of the exhaust port is lowered. When the treated gas component in the exhaust gas comes into contact with the vicinity of the end face of the exhaust port, it is easily condensed and formed as a by-product. When the vicinity of the end face of the exhaust port is positively cooled by the cooling water passage, the by-products are more likely to adhere. By-products are attached near the end face of the exhaust port,
If these by-products become particles and flow back into the processing container, the semiconductor wafer may be contaminated.

【0005】本発明は、前記事情を考慮してなされたも
ので、処理容器の排気口の端面付近における副生成物の
付着を抑制して被処理体のパーティクル汚染を防止する
ことができる熱処理装置および熱処理方法を提供するこ
とを目的とする。
The present invention has been made in consideration of the above circumstances, and is a heat treatment apparatus capable of preventing the by-products from adhering to the vicinity of the end face of the exhaust port of the processing container and preventing particle contamination of the object to be processed. And to provide a heat treatment method.

【0006】[0006]

【課題を解決するための手段】本発明のうち、請求項1
の発明は、排気口を有する処理容器内に被処理体を収容
して所定の熱処理を施す熱処理装置であって、前記排気
口の端面に気密材を介して排気管を接続し、前記排気口
の端面付近における副生成物の付着を抑制すべく内周面
から気体を吹出す複数の気体吹出し部を有する内管を排
気管内から排気口内の所定範囲に設けたことを特徴とす
る。前記気密材としては、例えばメタルシールやOリン
グ等が使用可能である。気密材としては、耐熱性を有す
るものが用いられるが、その耐熱性には限度があるた
め、その熱的劣化を抑制すべく気密材の近傍には冷却部
が設けられていることが好ましい。
[Means for Solving the Problems] Claim 1 of the present invention
The present invention is a heat treatment apparatus for accommodating an object to be processed in a processing container having an exhaust port and performing a predetermined heat treatment, wherein an exhaust pipe is connected to an end face of the exhaust port via an airtight material, The inner pipe having a plurality of gas blowing portions for blowing gas from the inner peripheral surface is provided in a predetermined range from the inside of the exhaust pipe to the inside of the exhaust port so as to suppress adhesion of by-products near the end face of the. As the airtight material, for example, a metal seal or an O-ring can be used. As the airtight material, one having heat resistance is used, but since the heat resistance is limited, it is preferable to provide a cooling part in the vicinity of the airtight material in order to suppress its thermal deterioration.

【0007】請求項2の発明は、請求項1の熱処理装置
において、前記排気口の端面付近の排気配管には副生成
物の付着を抑制する温度に加熱する加熱部が設けられて
いることを特徴とする。
According to a second aspect of the present invention, in the heat treatment apparatus according to the first aspect, the exhaust pipe near the end face of the exhaust port is provided with a heating unit for heating to a temperature at which adhesion of by-products is suppressed. Characterize.

【0008】請求項3の発明は、請求項1の熱処理装置
において、前記気体が副生成物の付着を抑制する温度に
加温された不活性ガスであることを特徴とする。
According to a third aspect of the present invention, in the heat treatment apparatus according to the first aspect, the gas is an inert gas heated to a temperature at which adhesion of by-products is suppressed.

【0009】請求項4の発明は、請求項1の熱処理装置
において、前記気体がクリーニングガスであることを特
徴とする。
According to a fourth aspect of the present invention, in the heat treatment apparatus according to the first aspect, the gas is a cleaning gas.

【0010】請求項5の発明は、請求項1の熱処理装置
において、前記内管の排気口側先端部にはその外周から
排気管側に延出された筒状延出部が設けられ、該筒状延
出部と排気管の内周との間には冷却部に接近させて気密
材が介設されていることを特徴とする。
According to a fifth aspect of the present invention, in the heat treatment apparatus according to the first aspect, a tip end portion of the inner pipe on the exhaust port side is provided with a cylindrical extension portion extending from an outer periphery thereof toward the exhaust pipe. An airtight material is provided between the cylindrical extending portion and the inner circumference of the exhaust pipe so as to be close to the cooling portion.

【0011】請求項6の発明は、請求項1の熱処理装置
において、前記内管の排気口側先端部には、排気口の内
周との間における副生成物の付着を抑制すべく気体を吹
出す先端吹出し部が設けられていることを特徴とする請
求項1記載の熱処理装置。
According to a sixth aspect of the present invention, in the heat treatment apparatus according to the first aspect, a gas is provided at the exhaust port side tip portion of the inner pipe so as to suppress adhesion of by-products between the inner periphery of the exhaust port. The heat treatment apparatus according to claim 1, further comprising a tip end blowing portion that blows out.

【0012】請求項7の発明は、請求項1の熱処理装置
において、前記処理容器が縦型の単管構造からなり、そ
の頂部に排気口を備えていることを特徴とする。
According to a seventh aspect of the present invention, in the heat treatment apparatus of the first aspect, the processing container has a vertical single tube structure, and an exhaust port is provided at the top thereof.

【0013】請求項8の発明は、単管構造の処理容器内
に被処理体を収容して所定の処理ガスを下方から導入す
ると共に処理容器の上部に設けた排気口から排気して所
定の熱処理を行う熱処理方法であって、前記排気口の端
面に気密材を介して排気管を接続すると共に該気密材の
近傍に冷却部を設け、前記排気管内から排気口内の所定
範囲に内周面から気体を吹出す複数の気体吹出し部を有
する内管を設け、該内管の内周面に沿って気体を流すこ
とにより排気口の端面付近における副生成物の付着を抑
制することを特徴とする。
According to an eighth aspect of the present invention, the object to be processed is housed in a processing container having a single-pipe structure, a predetermined processing gas is introduced from below, and a predetermined exhaust gas is exhausted from an exhaust port provided in the upper portion of the processing container. A heat treatment method for performing heat treatment, wherein an exhaust pipe is connected to an end surface of the exhaust port via an airtight material, and a cooling unit is provided in the vicinity of the airtight material, and an inner peripheral surface is within a predetermined range from the inside of the exhaust pipe to the inside of the exhaust port. An inner pipe having a plurality of gas blowing portions for blowing gas from the inner pipe is provided, and by flowing gas along the inner peripheral surface of the inner pipe, adhesion of by-products near the end face of the exhaust port is suppressed. To do.

【0014】[0014]

【発明の実施の形態】以下に、本発明の実施の形態を添
付図面に基いて詳述する。図1は本発明の実施の形態で
ある熱処理装置の構成を示す図、図2は同熱処理装置の
要部を示す拡大断面図、図3は内管の構成を示す図で、
(a)は先端部材の断面図、(b)は中間部材の断面
図、(c)は後端部材の断面図である。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is a diagram showing a configuration of a heat treatment apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged sectional view showing an essential part of the heat treatment apparatus, and FIG. 3 is a diagram showing a configuration of an inner pipe.
(A) is a sectional view of a front end member, (b) is a sectional view of an intermediate member, and (c) is a sectional view of a rear end member.

【0015】図1において、1は縦型の熱処理装置で、
この熱処理装置1は多数枚の被処理体例えば半導体ウエ
ハwを下方から収容して所定の熱処理例えばCVD処理
を施す処理容器(プロセスチューブ)2を備えている。
この処理容器2は、縦型の単管構造とされ、耐熱性およ
び耐食性を有する材料例えば石英ガラスにより形成され
ている。
In FIG. 1, reference numeral 1 is a vertical heat treatment apparatus,
The heat treatment apparatus 1 includes a processing container (process tube) 2 that accommodates a large number of objects to be processed, for example, semiconductor wafers w from below and performs a predetermined heat treatment, for example, a CVD process.
The processing container 2 has a vertical single-tube structure and is made of a material having heat resistance and corrosion resistance, for example, quartz glass.

【0016】前記処理容器2の下端部は炉口として開口
し、その炉口(開口)3の外周にはフランジ部(開口フ
ランジ部)4が形成されている。処理容器2の下側部、
図示例ではフランジ部4には処理ガスや処理容器内パー
ジ用の不活性ガス例えば窒素(N)ガスを導入するガ
ス導入管5が気密に貫通して設けられており、ガス導入
管5には処理ガスや不活性ガスを所定の流量で供給する
図示しないガス供給系の配管(ガス供給管)が接続され
ている。処理容器2の上端部(頂部)は縮径し、その中
央部には上方に立上がり、一側方に向って開口した逆L
形状の排気口(排気ポート)6が形成されており、この
排気口6には後述する排気系の配管(排気管)7が接続
されている。
The lower end of the processing container 2 is opened as a furnace opening, and a flange portion (opening flange portion) 4 is formed on the outer periphery of the furnace opening (opening) 3. The lower part of the processing container 2,
In the illustrated example, a gas introducing pipe 5 for introducing a processing gas or an inert gas for purging the inside of the processing container, for example, nitrogen (N 2 ) gas, is provided through the flange portion 4 in an airtight manner, and the gas introducing pipe 5 is provided. Is connected to a pipe (gas supply pipe) of a gas supply system (not shown) for supplying the processing gas and the inert gas at a predetermined flow rate. The upper end portion (top portion) of the processing container 2 has a reduced diameter, and a central portion of the processing container 2 rises upward and has an inverse L
An exhaust port (exhaust port) 6 having a shape is formed, and an exhaust system pipe (exhaust pipe) 7 described later is connected to the exhaust port 6.

【0017】前記処理容器2の周囲には処理容器2内の
ウエハwを所定の熱処理温度に加熱昇温するためのヒー
タ8が設けられている。このヒータ8は、処理容器2の
周囲および上方を取囲む水冷ジャケット9を有し、この
水冷ジャケット9の内周に抵抗発熱体10を配設して構
成されている。水冷ジャケット9には、処理容器2の上
部を加熱する抵抗発熱体(上部加熱部)11および排気
口6の周囲を加熱する抵抗発熱体(排気口加熱部)12
が設けられている。
A heater 8 for heating the wafer w in the processing container 2 to a predetermined heat treatment temperature is provided around the processing container 2. The heater 8 has a water cooling jacket 9 surrounding the processing container 2 and the upper part thereof, and a resistance heating element 10 is arranged on the inner circumference of the water cooling jacket 9. The water cooling jacket 9 includes a resistance heating element (upper heating section) 11 for heating the upper portion of the processing container 2 and a resistance heating element (exhaust port heating section) 12 for heating the periphery of the exhaust port 6.
Is provided.

【0018】前記ヒータ8は環状の底面板13を有し、
この底面板13を介してベースプレート14上に設置さ
れている。処理容器2の開口フランジ部4の下面には、
環状の支持体15がフランジ押え16を介して取付けら
れ、この支持体15が前記ヒータ8の底面板13に取付
部材17を介して取付けられている。
The heater 8 has an annular bottom plate 13,
It is installed on the base plate 14 via the bottom plate 13. On the lower surface of the opening flange portion 4 of the processing container 2,
An annular support 15 is attached via a flange retainer 16, and this support 15 is attached to the bottom plate 13 of the heater 8 via an attachment member 17.

【0019】前記処理容器2内に多数枚例えば25〜1
50枚程度の半導体ウエハwを高さ方向に所定間隔で搭
載保持するために、ウエハwは保持具である例えば石英
ガラス製のボート18に保持されている。処理容器2の
下方には処理容器2の炉口(開口)3を密閉する例えば
SUS製の蓋体19が設けられている。
A large number of sheets, for example, 25 to 1 in the processing container 2
In order to mount and hold about 50 semiconductor wafers w at predetermined intervals in the height direction, the wafers w are held by a boat 18 made of, for example, quartz glass, which is a holder. A lid 19 made of, for example, SUS for sealing the furnace opening (opening) 3 of the processing container 2 is provided below the processing container 2.

【0020】前記蓋体19上には処理容器2の炉口3か
らの放熱を抑制する断熱手段(炉口断熱手段)として、
図示例ではサーモプラグ20が設けられている。このサ
ーモプラグ20は、蓋体19上に立設される複数本の脚
柱21と、これら脚柱21の上端部に略水平に設けられ
た抵抗発熱体からなる下部加熱部22とから主に構成さ
れている。また、蓋体19上には前記ボート18をサー
モプラグ20よりも上方位置に載置するための載置台2
3が設けられている。この載置台23は蓋体19の中央
部からサーモプラグ20の中央を緩く貫通して立上がっ
た支柱24を有している。蓋体19の下部には支柱24
を介して載置台23を水平回転させるための回転機構2
5が設けられている。
On the lid 19, as heat insulation means (furnace mouth heat insulation means) for suppressing heat radiation from the furnace mouth 3 of the processing container 2,
In the illustrated example, a thermo plug 20 is provided. The thermoplug 20 is mainly composed of a plurality of pedestals 21 standing on the lid body 19 and a lower heating section 22 formed of a resistance heating element provided substantially horizontally on the upper ends of the pedestals 21. It is configured. In addition, a mounting table 2 for mounting the boat 18 above the thermoplug 20 on the lid 19.
3 is provided. The mounting table 23 has a column 24 that stands up from the center of the lid body 19 through the center of the thermoplug 20. A pillar 24 is provided below the lid body 19.
Rotation mechanism 2 for horizontally rotating the mounting table 23 via the
5 are provided.

【0021】前記処理容器2の下方には、蓋体19を昇
降させて蓋体19の開閉および処理容器2内に対するボ
ート18の搬入(ロード)、搬出(アンロード)を行う
ための昇降機構26が設けられていると共にその作業領
域であるローディングエリア27が設けられている。前
記蓋体19の上面には腐食性ガスの接触による腐食を防
止するために例えば石英ガラス製のカバー材28で被覆
されていることが好ましい。
Below the processing vessel 2, a lid mechanism 19 is moved up and down to open and close the lid body 19 and to carry in (load) and carry out (unload) the boat 18 from and into the processing vessel 2. And a loading area 27 which is a working area thereof. The upper surface of the lid 19 is preferably covered with a cover material 28 made of, for example, quartz glass in order to prevent corrosion due to contact with corrosive gas.

【0022】一方、前記排気管7は、前記処理容器2の
排気口6の端面6aに気密材であるOリング29を介し
て接続された水平管30と、この水平管30にエルボ3
1を介して下向きに接続された垂直管32とを備えてお
り、この垂直管32の下端部には排気中から処理ガス成
分の副生成物を捕捉するための排気トラップ33が設け
られている。この排気トラップ33が低位置にあるた
め、そのエレメント交換等のメンテナンスを容易に行う
ことができる。処理容器2が単管上引き排気構造で、排
気口6が高所にあるため、後述する排気口6の副生成物
対策により副生成物を先送りして低所の排気トラップ3
3で捕捉するようにしており、これにより排気口6のメ
ンテナンスと排気トラップ33のメンテナンスを軽減で
き、メンテナンス性の向上が図れる。
On the other hand, the exhaust pipe 7 is a horizontal pipe 30 connected to the end face 6a of the exhaust port 6 of the processing container 2 via an O-ring 29 which is an airtight material, and the elbow 3 to the horizontal pipe 30.
1 is provided with a vertical pipe 32 connected downward, and an exhaust trap 33 for trapping a by-product of the processing gas component from the exhaust gas is provided at the lower end of the vertical pipe 32. . Since the exhaust trap 33 is at the low position, maintenance such as element replacement can be easily performed. Since the processing container 2 has a single-tube upward exhaust structure and the exhaust port 6 is located at a high place, the by-product is postponed by a countermeasure for the by-product of the exhaust port 6 which will be described later, and the exhaust trap 3 at a low place is provided.
3, the maintenance of the exhaust port 6 and the maintenance of the exhaust trap 33 can be reduced, and the maintainability can be improved.

【0023】前記排気管7の前記排気トラップ33より
も下流には、開閉および流量調整が可能な圧力可変弁3
4および減圧ポンプ35等が設けられ、処理容器2内を
所定の減圧処理圧力に圧力制御可能に構成されている。
前記排気管7は、例えばSUS製の配管、好ましくは内
面をフッ素系の樹脂コート材でコーティングした配管か
らなっている。
Downstream of the exhaust trap 33 of the exhaust pipe 7, a pressure variable valve 3 that can be opened and closed and the flow rate can be adjusted.
4, a decompression pump 35, etc. are provided so that the pressure inside the processing container 2 can be controlled to a predetermined decompression processing pressure.
The exhaust pipe 7 is, for example, a pipe made of SUS, preferably a pipe whose inner surface is coated with a fluorine resin coating material.

【0024】前記排気口6および排気管7の接続端に
は、図2にも示すように、フランジ部36,37が設け
られ、これらフランジ部36,37の対向面間に気密材
であるOリング29が介設され、このOリング29の近
傍にはその熱的劣化を抑制するための冷却部である冷却
水通路39が設けられている。図示例では、排気管7の
フランジ部37側にOリング29が設けられていると共
にこのOリング29に接近させて冷却水通路39が設け
られている。なお、フランジ部36,37同士は、図示
しないクランプ機構により締結されている。
As shown in FIG. 2, flanges 36 and 37 are provided at the connection ends of the exhaust port 6 and the exhaust pipe 7, and an airtight material O is formed between the facing surfaces of the flanges 36 and 37. A ring 29 is provided, and a cooling water passage 39, which is a cooling unit for suppressing thermal deterioration, is provided near the O-ring 29. In the illustrated example, an O-ring 29 is provided on the flange portion 37 side of the exhaust pipe 7, and a cooling water passage 39 is provided close to the O-ring 29. The flange portions 36 and 37 are fastened together by a clamp mechanism (not shown).

【0025】前記熱処理装置1においては、処理容器2
の頂部に排気口6が設けられ、その排気口6の端面6a
付近がOリング29を冷却する冷却水通路39により冷
却されているため、排気中の処理ガス成分が接触して副
生成物の付着を生じ易いだけでなく、その副生成物がパ
ーティクルとなって排気口6から処理容器2内のウエハ
w上に落下し、ウエハwを汚染する恐れがある。そこ
で、処理容器2の排気口6の端面6a付近における副生
成物の付着を抑制してウエハwのパーティクル汚染を防
止するために、内周面から気体を吹出す複数の気体吹出
し部40を有する内管41が排気管6内、図示例では水
平管30内から排気口6内の所定範囲に設けられてい
る。
In the heat treatment apparatus 1, the processing container 2
An exhaust port 6 is provided at the top of the exhaust port 6, and the end face 6a of the exhaust port 6 is
Since the vicinity is cooled by the cooling water passage 39 that cools the O-ring 29, not only the process gas components in the exhaust gas are likely to come into contact with each other to cause by-product adhesion, but also the by-product becomes particles. The exhaust port 6 may drop onto the wafer w in the processing container 2 and contaminate the wafer w. Therefore, in order to prevent the by-products from adhering to the vicinity of the end surface 6a of the exhaust port 6 of the processing container 2 and prevent particle contamination of the wafer w, a plurality of gas blowing portions 40 for blowing gas from the inner peripheral surface are provided. The inner pipe 41 is provided in the exhaust pipe 6, in the illustrated example, in a predetermined range from the horizontal pipe 30 to the exhaust port 6.

【0026】前記内管41と排気配管(排気口6および
水平管30)の内周との間には環状の気体通路42が形
成され、水平管30には気体通路42に気体例えば不活
性ガス好ましくは窒素(N)ガスを供給する気体供給
口(気体供給ポート)43が設けられている。この気体
供給口43には、流量調整機構を介して気体供給源が接
続されている(図示省略)。
An annular gas passage 42 is formed between the inner pipe 41 and the inner circumference of the exhaust pipe (exhaust port 6 and horizontal pipe 30), and a gas such as an inert gas is formed in the gas passage 42 in the horizontal pipe 30. Preferably, a gas supply port (gas supply port) 43 for supplying nitrogen (N 2 ) gas is provided. A gas supply source is connected to the gas supply port 43 via a flow rate adjusting mechanism (not shown).

【0027】前記気体通路42の両端からガスが漏出す
るのを防止するために、内管41の排気口側先端部(先
端部材)および排気管側後端部(後端部材)には排気配
管の内周との間をシールする気密材であるOリング4
4,45が配設されている。これらOリング44,45
および前記前記Oリング29は、耐熱性を有する材料例
えばフッ素系樹脂により形成されていることが好まし
い。処理容器2内から排気口6を介して排気管7内に流
れる排気ガスは処理容器2内では高温であるが、排気通
路を流れ方向に進むにしたがって自然放熱により降温す
るため、下流側のOリング45は熱的劣化を起こしにく
いが、上流側のOリング44は熱的劣化を起こし易い。
そこで、排気口側先端部のOリング44の熱的劣化を防
止するために、内管41の排気口側先端部にはその外周
から排気管側(水平管側)に延出された筒状延出部46
が設けられ、この筒状延出部46と排気管7の内周との
間には前記冷却水通路39に接近させてOリング44が
介設されている。
In order to prevent gas from leaking from both ends of the gas passage 42, exhaust pipes are provided at the exhaust port side front end (tip member) and the exhaust pipe side rear end (rear end member) of the inner pipe 41. O-ring 4 which is an airtight material that seals between the inner circumference of
4, 45 are provided. These O-rings 44, 45
The O-ring 29 is preferably made of a heat-resistant material such as a fluorine resin. Although the exhaust gas flowing from the inside of the processing container 2 into the exhaust pipe 7 through the exhaust port 6 has a high temperature inside the processing container 2, the temperature of the exhaust gas decreases by natural heat dissipation as it progresses through the exhaust passage in the flow direction. The ring 45 is less prone to thermal degradation, but the upstream O-ring 44 is prone to thermal degradation.
Therefore, in order to prevent thermal deterioration of the O-ring 44 at the exhaust port side tip portion, a tubular shape extending from the outer periphery to the exhaust pipe side (horizontal pipe side) is provided at the exhaust port side tip portion of the inner pipe 41. Extension 46
An O-ring 44 is provided between the cylindrical extension 46 and the inner circumference of the exhaust pipe 7 so as to approach the cooling water passage 39.

【0028】前記内管41は、具体的には図3にも示す
ように、排気ガスの流れ方向上流に配置される環状の先
端部材41aと、下流に配置される環状の後端部材41
cと、これら先端部材41aと後端部材41cの間に介
在される環状の複数の中間部材41bとから構成されて
いる。中間部材41bの先端側内周には雌ねじ部47が
設けられ、中間部材41bの後端側外周には前記雌ねじ
部47と螺合し得るねじピッチの雄ねじ部48が設けら
れている。また、中間部材41bには前記雌ねじ部47
と隣接して下流側に複数の通気口49が周方向に設けら
れている。
Specifically, as shown in FIG. 3, the inner pipe 41 has an annular tip member 41a arranged upstream in the exhaust gas flow direction and an annular rear end member 41 arranged downstream.
c, and a plurality of annular intermediate members 41b interposed between the front end member 41a and the rear end member 41c. A female screw portion 47 is provided on the inner circumference of the tip end side of the intermediate member 41b, and a male screw portion 48 having a screw pitch that can be screwed into the female screw portion 47 is provided on the outer circumference of the rear end side of the intermediate member 41b. Further, the female screw portion 47 is provided on the intermediate member 41b.
A plurality of vent holes 49 are provided in the circumferential direction on the downstream side adjacent to the.

【0029】中間部材41bの内周面は上流側(雌ねじ
部および通気口の位置)が略水平の平坦面50になって
いるが、下流側がなだらかに漸次縮径したテーパー面5
1になっている。また、中間部材41bには前記雄ねじ
部47と隣接して下流側に先端側の内周平坦面50より
も小径の外周面(段部)52が形成されている。このよ
うな構成により、一方の中間部材41bの雌ねじ部47
に他方の中間部材41cの雄ねじ部48を螺合すること
で複数の中間部材41bを長手方向に連結することがで
きると共に、環状の気体通路42から通気口49に入っ
た気体が一方の先端側内周平坦面50と他方の後端側外
周面52との間の隙間(気体吹出し部)40から内管4
1の内周面に沿って下流側へ吹出されるようになってい
る。
The inner peripheral surface of the intermediate member 41b has a substantially horizontal flat surface 50 on the upstream side (positions of the female screw portion and the vent hole), but the tapered surface 5 on the downstream side has a gradually and gradually reduced diameter.
It is 1. An outer peripheral surface (step portion) 52 having a diameter smaller than that of the inner peripheral flat surface 50 on the tip side is formed on the downstream side of the intermediate member 41b adjacent to the male screw portion 47. With such a configuration, the female screw portion 47 of the one intermediate member 41b is formed.
The plurality of intermediate members 41b can be connected in the longitudinal direction by screwing the male screw portion 48 of the other intermediate member 41c into the longitudinal direction, and the gas entering the ventilation port 49 from the annular gas passage 42 can be connected to the one tip side. From the gap (gas blowing portion) 40 between the inner peripheral flat surface 50 and the other outer peripheral surface 52 on the rear end side to the inner pipe 4
The air is blown out to the downstream side along the inner peripheral surface of 1.

【0030】前記後端部材41cには、先端側内周に前
記中間部材41bの雄ねじ部48に螺合する雌ねじ部5
3が設けられていると共に、この雌ねじ部53と隣接し
て下流側に複数の通気口54が周方向に設けられてい
る。また、後端部材41cの後端側外周にはフランジ部
55が形成され、このフランジ部55と水平管30の内
周との間にこれらの間の隙間をシールする前記Oリング
45が介設されている。
The rear end member 41c has a female screw portion 5 which is screwed to the male screw portion 48 of the intermediate member 41b on the inner circumference of the front end side.
3 is provided, and a plurality of vent holes 54 are provided in the circumferential direction on the downstream side adjacent to the female screw portion 53. A flange 55 is formed on the outer periphery of the rear end member 41c on the rear end side, and the O-ring 45 is provided between the flange 55 and the inner periphery of the horizontal pipe 30 to seal a gap therebetween. Has been done.

【0031】前記先端部材41aには、中間部材41b
の先端部が係合する環状の係合溝56が設けられている
と共に、外周から下流側へ延出した前記筒状延出部46
が設けられている。係合溝56には中間部材41bの雌
ねじ部47が螺合する雄ねじ部が形成されていても良
い。筒状延出部46は隣接する1個または数個の中間部
材41bの外周を覆っており、その中間部材41bの外
周と筒状延出部46の内周との間には前記環状の気体通
路42と連通する環状の気体通路57が形成されてい
る。また、先端部材41aの内周には、前記気体通路5
7から中間部材41bの通気口49に入った気体を中間
部材41bの内周面に沿って下流側へ吹出させるための
隙間(気体吹出し部)40を中間部材の内周平坦面50
との間に形成する延出部58が形成されている。
The tip member 41a includes an intermediate member 41b.
Is provided with an annular engagement groove 56 with which the distal end portion of the cylindrical extension portion 46 engages, and the cylindrical extension portion 46 extends from the outer periphery to the downstream side.
Is provided. The engagement groove 56 may be formed with a male screw portion with which the female screw portion 47 of the intermediate member 41b is screwed. The cylindrical extending portion 46 covers the outer circumference of one or several intermediate members 41b adjacent to each other, and the annular gas is provided between the outer circumference of the intermediate member 41b and the inner circumference of the cylindrical extending portion 46. An annular gas passage 57 communicating with the passage 42 is formed. The gas passage 5 is formed on the inner circumference of the tip member 41a.
A gap (gas blowout portion) 40 for blowing the gas, which has entered the vent hole 49 of the intermediate member 41b from 7 to the downstream side along the inner peripheral surface of the intermediate member 41b, is provided with the inner peripheral flat surface 50 of the intermediate member.
An extending portion 58 is formed between and.

【0032】先端部材41aの外周および筒状延出部4
6の外周は排気口6の内周および水平管30の入口側内
周に接している。また、先端部材41aの内周には、排
気口6からの排気ガスを円滑に内管41内に導入するた
めに先端に向って漸次拡径したテーパー部59が形成さ
れている。なお、図示例では、筒状延出片部46の下流
側先端部外周と水平管30の内周との間にOリング44
を介設するために、水平管30の内周にはその入口側内
周よりも拡径した段部60が設けられているが、Oリン
グ44を水平管30の内周に埋め込むようにすれば前記
段部60は必ずしも設ける必要はない。
Outer periphery of the tip member 41a and the cylindrical extension 4
The outer circumference of 6 is in contact with the inner circumference of the exhaust port 6 and the inner circumference of the horizontal pipe 30 on the inlet side. Further, a tapered portion 59 having a diameter gradually increasing toward the tip is formed on the inner periphery of the tip member 41a in order to smoothly introduce the exhaust gas from the exhaust port 6 into the inner pipe 41. In the illustrated example, the O-ring 44 is provided between the outer circumference of the downstream end of the tubular extension piece 46 and the inner circumference of the horizontal pipe 30.
In order to interpose, the step portion 60 having a diameter larger than that of the inner circumference of the horizontal pipe 30 is provided on the inner circumference of the horizontal pipe 30, but the O-ring 44 may be embedded in the inner circumference of the horizontal pipe 30. For example, the step portion 60 does not necessarily have to be provided.

【0033】前記排気口6の端面6a付近の排気配管、
すなわち排気口6の外周および水平管30の外周には副
生成物の付着を抑制する温度例えば250℃程度に加熱
する加熱部例えばパイプヒータ61,62が設けられて
いることが好ましい。また、排気口6および水平管30
のフランジ部36,37の対向面とは反対側の面(背
面)には、同様の加熱部例えばフランジヒータ63,6
4が設けられていることが好ましい。更に、前記気体が
副生成物の付着を抑制する温度に加温された不活性ガス
例えば窒素ガスであることが好ましい。
Exhaust pipe near the end face 6a of the exhaust port 6,
That is, it is preferable that the outer periphery of the exhaust port 6 and the outer periphery of the horizontal pipe 30 are provided with heating units such as pipe heaters 61 and 62 for heating to a temperature at which adhesion of by-products is suppressed, for example, about 250 ° C. In addition, the exhaust port 6 and the horizontal pipe 30
On the surface (rear surface) opposite to the facing surface of the flange portions 36, 37 of the same, for example, a similar heater, for example, the flange heaters 63, 6
4 is preferably provided. Further, it is preferable that the gas is an inert gas, for example, nitrogen gas, which is heated to a temperature at which the adhesion of by-products is suppressed.

【0034】次に、以上の構成からなる熱処理装置の作
用および熱処理方法を述べる。ローディングエリア27
において図示しないカセットからボート18へのウエハ
wの移載が終了すると、昇降機構26による蓋体19の
上昇によってボート18を処理容器2内に下部の炉口3
からロードし、炉口3を蓋体19で気密に閉塞する。
Next, the operation and heat treatment method of the heat treatment apparatus having the above structure will be described. Loading area 27
When the transfer of the wafer w from the cassette (not shown) to the boat 18 is completed in FIG.
Then, the furnace opening 3 is airtightly closed by the lid 19.

【0035】そして、処理容器2内を、排気口6に接続
された排気管7による減圧排気により所定の圧力ないし
真空度に制御すると共にヒータ8により所定の処理温度
に制御し、この状態で処理容器2内にガス導入管5によ
り処理ガスを導入してウエハwに所定の熱処理例えばC
VD処理を開始する。そして、熱処理が終了したなら、
処理ガスの導入を停止し、不活性ガスの導入により処理
容器2内をパージしてから、蓋体19を降下させて処理
容器2内を開放すると共にボート18をローディングエ
リア27にアンロードすればよい。
Then, the inside of the processing container 2 is controlled to a predetermined pressure or vacuum degree by decompressing by an exhaust pipe 7 connected to an exhaust port 6, and a predetermined processing temperature is controlled by a heater 8 to perform processing in this state. A processing gas is introduced into the container 2 through the gas introduction pipe 5 to perform a predetermined heat treatment on the wafer w, for example, C.
Start VD processing. And when the heat treatment is finished,
If the introduction of the processing gas is stopped and the inside of the processing container 2 is purged by the introduction of the inert gas, the lid 19 is lowered to open the inside of the processing container 2 and the boat 18 is unloaded into the loading area 27. Good.

【0036】前記熱処理装置1によれば、処理容器2が
単管構造であり、二重管構造のものよりも熱容量が小さ
いため、急速昇降温が可能なヒータ8の特性を十分に活
かすことができ、処理能力の向上が図れる。また、処理
容器2の下側部に設けたガス導入管5から処理容器2内
に処理ガスを導入し、この処理ガスを処理容器2の頂部
に設けた排気口6から排気するようしたので、処理容器
2内の下方から上方へ片流れないし偏った流れのない真
っ直ぐな均一のガス流(上昇流)を形成することがで
き、ウエハwの面内均一な処理が可能となり、歩留りの
向上および処理能力の向上が図れる。
According to the heat treatment apparatus 1, since the processing container 2 has a single-tube structure and has a smaller heat capacity than that of a double-tube structure, the characteristics of the heater 8 capable of rapid temperature increase / decrease can be fully utilized. As a result, the processing capacity can be improved. Further, since the processing gas is introduced into the processing container 2 from the gas introduction pipe 5 provided on the lower side of the processing container 2 and the processing gas is exhausted from the exhaust port 6 provided at the top of the processing container 2, It is possible to form a straight and uniform gas flow (upflow) with no unidirectional or biased flow in the processing container 2 from the lower side to the in-plane uniform processing of the wafer w, thereby improving the yield and processing. The ability can be improved.

【0037】特に、前記排気口6の端面6aにOリング
29を介して排気管7を接続すると共に該Oリング29
の近傍に冷却部39を設け、前記排気口6の端面6a付
近における副生成物の付着を抑制すべく内周面から気体
を吹出す複数の気体吹出し部40を有する内管41を排
気管7内から排気口6内の所定範囲に設けて、該内管4
1の内周面に沿って気体を流すことにより排気口6の端
面6a付近における副生成物の付着を抑制するようにし
ているため、処理容器2の排気口6の端面6a付近にお
ける副生成物の付着を抑制してウエハwのパーティクル
汚染を防止することができ、歩留りの向上および処理能
力の向上が図れる。
In particular, the exhaust pipe 7 is connected to the end face 6a of the exhaust port 6 via an O-ring 29, and the O-ring 29 is connected.
Is provided near the end face 6a of the exhaust port 6, and the exhaust pipe 7 is provided with an inner pipe 41 having a plurality of gas blowout portions 40 for blowing out gas from the inner peripheral surface in order to suppress adhesion of by-products near the end face 6a of the exhaust port 6. The inner pipe 4 is provided within a predetermined range from the inside to the exhaust port 6.
By adhering the by-product near the end surface 6a of the exhaust port 6 by flowing the gas along the inner peripheral surface of the by-product 1, the by-product near the end surface 6a of the exhaust port 6 of the processing container 2 is suppressed. Can be suppressed and particle contamination of the wafer w can be prevented, and the yield and the processing capacity can be improved.

【0038】また、前記排気口6の端面6a付近の排気
配管に副生成物の付着を抑制する温度に加熱する加熱部
例えばパイプヒータ61,62を設ければ、排気口6の
端面6a付近における副生成物の付着を更に抑制するこ
とができ、ウエハwのパーティクル汚染の問題を解消す
ることができる。更に、前記気体として、副生成物の付
着を抑制する温度に加温された不活性ガスを用いれば、
処理容器2の排気口6の端面6a付近における副生成物
の付着を更に抑制することができ、ウエハwのパーティ
クル汚染の問題を解消することができる。
Further, by providing a heating unit, such as pipe heaters 61 and 62, for heating the exhaust pipe near the end face 6a of the exhaust port 6 to a temperature at which adhesion of by-products is suppressed, near the end face 6a of the exhaust port 6. By-product adhesion can be further suppressed, and the problem of particle contamination of the wafer w can be solved. Furthermore, if an inert gas heated to a temperature that suppresses the adhesion of by-products is used as the gas,
Adhesion of by-products near the end surface 6a of the exhaust port 6 of the processing container 2 can be further suppressed, and the problem of particle contamination of the wafer w can be solved.

【0039】図4、図5は内管の変形例を示す断面図で
ある。これらの図において、前記実施の形態と同一部分
は同一参照符号を付して説明を省略し、異なる部分につ
いて説明を加える。図4の実施の形態においては、内管
先端部の筒状延出部46と水平管30の内周との間には
Oリングが設けられておらず、その代わりに、筒状延出
部46には水平管30内の段部60に突き当たって係合
するフランジ部65が設けられている。これによれば、
Oリングを不要にすることができる。
4 and 5 are cross-sectional views showing modified examples of the inner pipe. In these figures, the same parts as those of the above-mentioned embodiment are designated by the same reference numerals, and the description thereof will be omitted. In the embodiment of FIG. 4, an O-ring is not provided between the tubular extension 46 at the tip of the inner pipe and the inner circumference of the horizontal pipe 30, and instead the O-ring is provided. The flange portion 46 is provided with a flange portion 65 that abuts and engages with the step portion 60 in the horizontal pipe 30. According to this
O-rings can be eliminated.

【0040】図5の実施の形態においては、内管41の
先端部には筒状延出部およびOリングが設けられていな
い。内管41の先端部(先端部材)の外周は排気口6の
内周に接しているが、これら内管41の先端部の外周と
排気口6の内周との間の微小な隙間(先端吹出し部)6
6から気体を吹出すことにより前記隙間66における副
生成物の付着を抑制するように構成されている。すなわ
ち、前記内管41の排気口側先端部には、排気口6の内
周との間における副生成物の付着を抑制すべく気体を吹
出す先端吹出し部66が設けられているため、内管41
の先端部と排気口6の内周との間に浸入して付着する副
生成物の付着を抑制することができる。
In the embodiment of FIG. 5, the cylindrical extension and the O-ring are not provided at the tip of the inner pipe 41. The outer circumference of the tip portion (tip member) of the inner pipe 41 is in contact with the inner circumference of the exhaust port 6, but a minute gap (tip) between the outer circumference of the tip portion of the inner pipe 41 and the inner circumference of the exhaust port 6 Blowing part) 6
By blowing out gas from 6, the adhesion of by-products in the gap 66 is suppressed. That is, since the tip end portion 66 of the inner pipe 41 is provided with a tip end blowout portion 66 for blowing out gas in order to suppress the adhesion of by-products between the inner circumference of the exhaust port 6 and the inner circumference of the exhaust port 6, Pipe 41
It is possible to suppress the attachment of the by-product that enters and adheres between the tip end portion and the inner circumference of the exhaust port 6.

【0041】以上、本発明の実施の形態を図面により詳
述してきたが、本発明は前記実施の形態に限定されるも
のではなく、本発明の要旨を逸脱しない範囲での種々の
設計変更等が可能である。例えば、前記実施の形態では
本発明をバッチ処理式の縦型熱処理装置に適用した例が
示されているが、請求項1に係る本発明はこれに限定さ
れず、例えば横型熱処理装置や枚葉式の熱処理装置にも
適用可能である。また、前記実施の形態では処理容器の
頂部に排気口を設けて上引き排気構造とした例が示され
ているが、請求項1に係る本発明はこれに限定されず、
例えば処理容器の下方に排気口を設けて下引き排気構造
とししたものにも適用可能である。本発明における熱処
理には、CVD以外に、例えば酸化、拡散、アニール等
が含まれる。また、気密材としては、Oリング以外に、
例えばメタルシール等であっても良い。
Although the embodiments of the present invention have been described in detail above with reference to the drawings, the present invention is not limited to the above embodiments, and various design changes and the like without departing from the scope of the present invention. Is possible. For example, in the above-described embodiment, an example in which the present invention is applied to a batch processing type vertical heat treatment apparatus is shown, but the present invention according to claim 1 is not limited to this, and for example, a horizontal heat treatment apparatus or a single wafer It is also applicable to a heat treatment apparatus of the type. Further, in the above-described embodiment, an example is shown in which an exhaust port is provided at the top of the processing container to provide an upward exhaust structure, but the present invention according to claim 1 is not limited to this.
For example, it can be applied to a structure in which an exhaust port is provided below the processing container to form a downward exhaust structure. The heat treatment in the present invention includes, for example, oxidation, diffusion, annealing, etc. in addition to CVD. As the airtight material, other than the O-ring,
For example, a metal seal or the like may be used.

【0042】また、内管に供給する気体としては、不活
性ガスに限定されず、例えばクリーニングガスであって
も良い。クリーニングガスとしては、例えばClF
NF ,HCl,HF,F,Clが使用できる。こ
れにより、処理容器の排気口の端面付近における副生成
物の付着を更に抑制することができ、ウエハのパーティ
クル汚染問題を解消することができる。また、被処理体
としては、半導体ウエハ以外に、例えばガラス基板やL
CD基板等も適用可能である。
The gas supplied to the inner tube is inactive.
The gas is not limited to
Is also good. Examples of the cleaning gas include ClFThree
NF Three, HCl, HF, FTwo, ClTwoCan be used. This
As a result, by-products near the end surface of the exhaust port of the processing container
It is possible to further suppress the adhesion of substances, and
It is possible to solve the problem of Kur's pollution. Also, the object to be processed
In addition to semiconductor wafers, for example, glass substrates and L
A CD substrate or the like is also applicable.

【0043】[0043]

【発明の効果】以上要するに本発明によれば、次のよう
な効果を奏することができる。
In summary, according to the present invention, the following effects can be obtained.

【0044】(1)請求項1の発明によれば、排気口を
有する処理容器内に被処理体を収容して所定の熱処理を
施す熱処理装置であって、前記排気口の端面に気密材を
介して排気管を接続し、前記排気口の端面付近における
副生成物の付着を抑制すべく内周面から気体を吹出す複
数の気体吹出し部を有する内管を排気管内から排気口内
の所定範囲に設けているため、処理容器の排気口の端面
付近における副生成物の付着を抑制して被処理体のパー
ティクル汚染を防止することができる。
(1) According to the first aspect of the present invention, there is provided a heat treatment apparatus for accommodating an object to be processed in a processing container having an exhaust port and performing a predetermined heat treatment, wherein an airtight material is provided on an end face of the exhaust port. An exhaust pipe is connected via an inner pipe having a plurality of gas blowing portions for blowing gas from the inner peripheral surface in order to suppress adhesion of by-products in the vicinity of the end face of the exhaust port. Since it is provided in the processing container, it is possible to suppress adhesion of by-products near the end surface of the exhaust port of the processing container and prevent particle contamination of the object to be processed.

【0045】(2)請求項2の発明によれば、前記排気
口の端面付近の排気配管には副生成物の付着を抑制する
温度に加熱する加熱部が設けられているため、排気口の
端面付近における副生成物の付着を更に抑制することが
できる。
(2) According to the second aspect of the invention, since the exhaust pipe near the end face of the exhaust port is provided with a heating unit for heating the exhaust pipe to a temperature at which adhesion of by-products is suppressed, Adhesion of by-products near the end face can be further suppressed.

【0046】(3)請求項3の発明によれば、前記気体
が副生成物の付着を抑制する温度に加温された不活性ガ
スであるため、処理容器の排気口の端面付近における副
生成物の付着を更に抑制することができる。
(3) According to the third aspect of the invention, since the gas is an inert gas heated to a temperature that suppresses the adhesion of by-products, the by-products near the end surface of the exhaust port of the processing container are generated. It is possible to further suppress the adhesion of substances.

【0047】(4)請求項4の発明によれば、前記気体
がクリーニングガスであるため、処理容器の排気口の端
面付近における副生成物の付着を更に抑制することがで
きる。
(4) According to the invention of claim 4, since the gas is a cleaning gas, it is possible to further suppress adhesion of by-products near the end surface of the exhaust port of the processing container.

【0048】(5)請求項5の発明によれば、前記内管
の排気口側先端部にはその外周から排気管側に延出され
た筒状延出部が設けられ、該筒状延出部と排気管の内周
との間には冷却部に接近させて気密材が介設されている
ため、排気口の端面よりも上流側に延出した内管の先端
部と排気管の内周との間の気密性を気密材により確保す
ることができると共に、気密材の熱的劣化を抑制して耐
久性の向上が図れる。
(5) According to the fifth aspect of the invention, a cylindrical extension portion extending from the outer periphery to the exhaust pipe side is provided at the exhaust port side tip of the inner pipe, and the cylindrical extension is provided. Since an airtight material is provided between the outlet and the inner circumference of the exhaust pipe in close proximity to the cooling part, the tip of the inner pipe extending upstream from the end face of the exhaust port and the exhaust pipe The airtightness with the inner circumference can be ensured by the airtight material, and the thermal deterioration of the airtight material can be suppressed to improve the durability.

【0049】(6)請求項6の発明によれば、前記内管
の排気口側先端部には、排気口の内周との間における副
生成物の付着を抑制すべく気体を吹出す先端吹出し部が
設けられているため、内管の先端部と排気口の内周との
間に浸入して付着する副生成物の付着を抑制することが
できる。
(6) According to the invention of claim 6, at the exhaust port side tip portion of the inner pipe, a tip end for blowing out gas so as to suppress adhesion of by-products between the inner periphery of the exhaust port. Since the blowout portion is provided, it is possible to suppress the attachment of the by-product that enters and attaches between the tip end portion of the inner pipe and the inner circumference of the exhaust port.

【0050】(7)請求項7の発明によれば、前記処理
容器が縦型の単管構造からなり、その頂部に排気口を備
えているため、処理容器が二重管下側部排気構造のもの
と異なり、ヒータの特性を十分に活かすことができると
共に処理ガスの片流れを防止することができ、処理能力
の向上が図れる。
(7) According to the invention of claim 7, since the processing container has a vertical single pipe structure and an exhaust port is provided at the top thereof, the processing container has a double pipe lower side exhaust structure. Unlike the above, the characteristics of the heater can be fully utilized, the one-way flow of the processing gas can be prevented, and the processing capacity can be improved.

【0051】(8)請求項8の発明によれば、単管構造
の処理容器内に被処理体を収容して所定の処理ガスを下
方から導入すると共に処理容器の上部に設けた排気口か
ら排気して所定の熱処理を行う熱処理方法であって、前
記排気口の端面に気密材を介して排気管えを接続すると
共に該気密材の近傍に冷却部を設け、前記排気管内から
排気口内の所定範囲に内周面から気体を吹出す複数の気
体吹出し部を有する内管を設け、該内管の内周面に沿っ
て気体を流すことにより排気口の端面付近における副生
成物の付着を抑制するため、処理容器が二重管下側部排
気構造のものと異なり、処理能力の向上が図れると共
に、パーティクルの問題も解消することができる。
(8) According to the invention of claim 8, the object to be processed is housed in the processing container having a single-pipe structure, a predetermined processing gas is introduced from below, and the exhaust port is provided at the upper part of the processing container. A heat treatment method of exhausting and performing a predetermined heat treatment, wherein an exhaust pipe is connected to an end face of the exhaust port via an airtight material, and a cooling unit is provided in the vicinity of the airtight material, and the inside of the exhaust pipe is connected to the inside of the exhaust port. By providing an inner pipe having a plurality of gas blowout portions that blow out gas from the inner peripheral surface within a predetermined range, and by causing the gas to flow along the inner peripheral surface of the inner pipe, adhesion of by-products near the end surface of the exhaust port can be prevented. Due to the suppression, unlike the double-pipe lower side exhaust structure, the processing capacity can be improved and the problem of particles can be solved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態である熱処理装置の構成を
示す図である。
FIG. 1 is a diagram showing a configuration of a heat treatment apparatus according to an embodiment of the present invention.

【図2】同熱処理装置の要部を示す拡大断面図である。FIG. 2 is an enlarged cross-sectional view showing a main part of the heat treatment apparatus.

【図3】内管の構成を示す図で、(a)は先端部材の断
面図、(b)は中間部材の断面図、(c)は後端部材の
断面図である。
3A and 3B are views showing a configuration of an inner pipe, FIG. 3A is a sectional view of a tip member, FIG. 3B is a sectional view of an intermediate member, and FIG. 3C is a sectional view of a rear end member.

【図4】内管の変形例を示す断面図である。FIG. 4 is a cross-sectional view showing a modified example of the inner pipe.

【図5】内管の変形例を示す断面図である。FIG. 5 is a cross-sectional view showing a modified example of the inner pipe.

【符号の説明】[Explanation of symbols]

1 熱処理装置 w 半導体ウエハ(被処理体) 2 処理容器 6 排気口 7 排気管 29 Oリング(気密材) 39 冷却水通路(冷却部) 40 気体吹出し部 41 内管 44 Oリング(気密材) 46 筒状延出部 66 先端吹出し部 1 Heat treatment equipment w Semiconductor wafer (object to be processed) 2 processing vessels 6 exhaust port 7 exhaust pipe 29 O-ring (airtight material) 39 Cooling water passage (cooling section) 40 Gas outlet 41 inner tube 44 O-ring (airtight material) 46 Cylindrical extension 66 Tip outlet

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/31 H01L 21/31 B E Fターム(参考) 4K030 EA11 4K056 AA09 BA01 BB03 BB05 CA06 CA18 DC05 EA01 4K061 AA01 BA11 DA05 HA05 HA07 5F045 AA03 AA20 AB32 AF03 BB15 EF20 EG08 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 21/31 H01L 21/31 BF term (reference) 4K030 EA11 4K056 AA09 BA01 BB03 BB05 CA06 CA18 DC05 EA01 4K061 AA01 BA11 DA05 HA05 HA07 5F045 AA03 AA20 AB32 AF03 BB15 EF20 EG08

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 排気口を有する処理容器内に被処理体を
収容して所定の熱処理を施す熱処理装置であって、前記
排気口の端面に気密材を介して排気管を接続し、前記排
気口の端面付近における副生成物の付着を抑制すべく内
周面から気体を吹出す複数の気体吹出し部を有する内管
を排気管内から排気口内の所定範囲に設けたことを特徴
とする熱処理装置。
1. A heat treatment apparatus for accommodating an object to be processed in a processing container having an exhaust port and performing a predetermined heat treatment, wherein an exhaust pipe is connected to an end face of the exhaust port via an airtight material, and the exhaust gas is exhausted. A heat treatment apparatus characterized in that an inner pipe having a plurality of gas blowing portions for blowing gas from the inner peripheral surface is provided in a predetermined range from the inside of the exhaust pipe to the inside of the exhaust port in order to suppress adhesion of by-products near the end face of the port. .
【請求項2】 前記排気口の端面付近の排気配管には副
生成物の付着を抑制する温度に加熱する加熱部が設けら
れていることを特徴とする請求項1記載の熱処理装置。
2. The heat treatment apparatus according to claim 1, wherein the exhaust pipe near the end surface of the exhaust port is provided with a heating unit for heating the exhaust pipe to a temperature at which adhesion of by-products is suppressed.
【請求項3】 前記気体が副生成物の付着を抑制する温
度に加温された不活性ガスであることを特徴とする請求
項1記載の熱処理装置。
3. The heat treatment apparatus according to claim 1, wherein the gas is an inert gas heated to a temperature at which adhesion of by-products is suppressed.
【請求項4】 前記気体がクリーニングガスであること
を特徴とする請求項1記載の熱処理装置。
4. The heat treatment apparatus according to claim 1, wherein the gas is a cleaning gas.
【請求項5】 前記内管の排気口側先端部にはその外周
から排気管側に延出された筒状延出部が設けられ、該筒
状延出部と排気管の内周との間には冷却部に接近させて
気密材が介設されていることを特徴とする請求項1記載
の熱処理装置。
5. A distal end portion of the inner pipe on the exhaust port side is provided with a cylindrical extension portion extending from the outer periphery thereof to the exhaust pipe side, and the tubular extension portion and the inner periphery of the exhaust pipe are provided. The heat treatment apparatus according to claim 1, wherein an airtight material is interposed between the cooling section and the cooling section.
【請求項6】 前記内管の排気口側先端部には、排気口
の内周との間における副生成物の付着を抑制すべく気体
を吹出す先端吹出し部が設けられていることを特徴とす
る請求項1記載の熱処理装置。
6. A tip end blow-out portion for blowing out gas is provided at a tip end portion of the inner pipe on the exhaust port side so as to suppress adhesion of by-products between the inner pipe and the inner circumference of the exhaust port. The heat treatment apparatus according to claim 1.
【請求項7】 前記処理容器が縦型の単管構造からな
り、その頂部に前記排気口を備えていることを特徴とす
る請求項1記載の熱処理装置。
7. The heat treatment apparatus according to claim 1, wherein the processing container has a vertical single tube structure, and the exhaust port is provided at the top thereof.
【請求項8】 単管構造の処理容器内に被処理体を収容
して所定の処理ガスを下方から導入すると共に処理容器
の上部に設けた排気口から排気して所定の熱処理を行う
熱処理方法であって、前記排気口の端面に気密材を介し
て排気管を接続すると共に該気密材の近傍に冷却部を設
け、前記排気管内から排気口内の所定範囲に内周面から
気体を吹出す複数の気体吹出し部を有する内管を設け、
該内管の内周面に沿って気体を流すことにより排気口の
端面付近における副生成物の付着を抑制することを特徴
とする熱処理方法。
8. A heat treatment method in which an object to be processed is housed in a processing container having a single-pipe structure, a predetermined processing gas is introduced from below, and a predetermined heat treatment is performed by exhausting from an exhaust port provided at the top of the processing container. The exhaust pipe is connected to the end surface of the exhaust port via an airtight material, and a cooling unit is provided in the vicinity of the airtight material, and gas is blown from the inner peripheral surface from the inside of the exhaust pipe to a predetermined range inside the exhaust port. An inner pipe having a plurality of gas blowing parts is provided,
A heat treatment method characterized by suppressing the adhesion of by-products in the vicinity of the end face of the exhaust port by causing a gas to flow along the inner peripheral surface of the inner pipe.
JP2001257187A 2001-08-28 2001-08-28 Heat treatment equipment Expired - Lifetime JP4963336B2 (en)

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109002A (en) * 2003-09-29 2005-04-21 Hitachi Kokusai Electric Inc Substrate processing apparatus
JP2007318100A (en) * 2006-04-24 2007-12-06 Mitsubishi Cable Ind Ltd Exhaust system
KR100791073B1 (en) * 2006-08-16 2008-01-02 삼성전자주식회사 Exhaust pipe having turbulence wings and exhaust system
JP2011006278A (en) * 2009-06-25 2011-01-13 Fukui Shinetsu Sekiei:Kk Purification treatment apparatus and purification treatment method of quartz glass workpiece
JP2012104755A (en) * 2010-11-12 2012-05-31 Tokyo Electron Ltd Assembly method of vacuum processing apparatus and the vacuum processing apparatus
JP2014503119A (en) * 2011-01-04 2014-02-06 ジェイ−ソリューション カンパニー,リミテッド Energy-saving silencer assembly, semiconductor manufacturing vacuum pump equipped with the same, and nitrogen gas heating method
JP2015134496A (en) * 2013-12-17 2015-07-27 キヤノン株式会社 Ink mist collection device, ink jet recording device, and ink mist collection method
JP2017089009A (en) * 2016-11-29 2017-05-25 株式会社日本製鋼所 Apparatus for growing atomic layer and exhaust part thereof
US10508338B2 (en) 2015-05-26 2019-12-17 The Japan Steel Works, Ltd. Device for atomic layer deposition
US10519549B2 (en) 2015-05-26 2019-12-31 The Japan Steel Works, Ltd. Apparatus for plasma atomic layer deposition
US10604838B2 (en) 2015-05-26 2020-03-31 The Japan Steel Works, Ltd. Apparatus for atomic layer deposition and exhaust unit for apparatus for atomic layer deposition
US10633737B2 (en) 2015-05-26 2020-04-28 The Japan Steel Works, Ltd. Device for atomic layer deposition
JP7492430B2 (en) 2020-10-12 2024-05-29 大同特殊鋼株式会社 Swinging duct and its manufacturing method

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JPH0927488A (en) * 1995-07-10 1997-01-28 Toshiba Corp Heat treating device
WO1998030731A1 (en) * 1997-01-13 1998-07-16 Mks Instruments, Inc. Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace

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JPH08227883A (en) * 1994-12-28 1996-09-03 Tokyo Electron Ltd Thermal treatment device
JPH0927488A (en) * 1995-07-10 1997-01-28 Toshiba Corp Heat treating device
WO1998030731A1 (en) * 1997-01-13 1998-07-16 Mks Instruments, Inc. Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109002A (en) * 2003-09-29 2005-04-21 Hitachi Kokusai Electric Inc Substrate processing apparatus
JP2007318100A (en) * 2006-04-24 2007-12-06 Mitsubishi Cable Ind Ltd Exhaust system
US8915775B2 (en) 2006-04-24 2014-12-23 Mitsubishi Cable Industries, Ltd. Exhaust system
KR100791073B1 (en) * 2006-08-16 2008-01-02 삼성전자주식회사 Exhaust pipe having turbulence wings and exhaust system
US7670399B2 (en) 2006-08-16 2010-03-02 Samsung Electronics Co., Ltd. Exhaust pipe having turbulence wings and an exhaust system
JP2011006278A (en) * 2009-06-25 2011-01-13 Fukui Shinetsu Sekiei:Kk Purification treatment apparatus and purification treatment method of quartz glass workpiece
JP2012104755A (en) * 2010-11-12 2012-05-31 Tokyo Electron Ltd Assembly method of vacuum processing apparatus and the vacuum processing apparatus
JP2014503119A (en) * 2011-01-04 2014-02-06 ジェイ−ソリューション カンパニー,リミテッド Energy-saving silencer assembly, semiconductor manufacturing vacuum pump equipped with the same, and nitrogen gas heating method
JP2015134496A (en) * 2013-12-17 2015-07-27 キヤノン株式会社 Ink mist collection device, ink jet recording device, and ink mist collection method
US9381746B2 (en) 2013-12-17 2016-07-05 Canon Kabushiki Kaisha Ink mist collection apparatus, ink jet printing apparatus, and ink mist collection method
US10508338B2 (en) 2015-05-26 2019-12-17 The Japan Steel Works, Ltd. Device for atomic layer deposition
US10519549B2 (en) 2015-05-26 2019-12-31 The Japan Steel Works, Ltd. Apparatus for plasma atomic layer deposition
US10604838B2 (en) 2015-05-26 2020-03-31 The Japan Steel Works, Ltd. Apparatus for atomic layer deposition and exhaust unit for apparatus for atomic layer deposition
US10633737B2 (en) 2015-05-26 2020-04-28 The Japan Steel Works, Ltd. Device for atomic layer deposition
JP2017089009A (en) * 2016-11-29 2017-05-25 株式会社日本製鋼所 Apparatus for growing atomic layer and exhaust part thereof
JP7492430B2 (en) 2020-10-12 2024-05-29 大同特殊鋼株式会社 Swinging duct and its manufacturing method

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