JP2011006278A - Purification treatment apparatus and purification treatment method of quartz glass workpiece - Google Patents

Purification treatment apparatus and purification treatment method of quartz glass workpiece Download PDF

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JP2011006278A
JP2011006278A JP2009150701A JP2009150701A JP2011006278A JP 2011006278 A JP2011006278 A JP 2011006278A JP 2009150701 A JP2009150701 A JP 2009150701A JP 2009150701 A JP2009150701 A JP 2009150701A JP 2011006278 A JP2011006278 A JP 2011006278A
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purification
gas
quartz glass
container
purification treatment
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JP5405208B2 (en
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Hiroki Iwakabe
博樹 岩壁
Akisada Tsuchida
昭禎 土田
Tatsuhiro Sato
龍弘 佐藤
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Shin Etsu Quartz Products Co Ltd
Fukui Shin Etsu Quartz Co Ltd
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Fukui Shin Etsu Quartz Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a purification treatment apparatus for increasing surface cleanliness of a quartz glass workpiece such as a quartz glass tool and a purification treatment method using the apparatus.SOLUTION: The purification treatment apparatus includes: a housing; a cylindrical purification treatment vessel made of quartz glass disposed within the housing; a heater which is disposed outside the purification treatment vessel and heats the inside of the purification treatment vessel to form a heat zone; a bottom opening for storage and takeoff of a quartz glass workpiece; a closing means to close the bottom opening in a tightly sealed state; a holding means to hold the quartz glass workpiece in a vertically movable state; a gas introduction part disposed in the lower end of the purification treatment vessel and for introducing a gas into the purification treatment vessel; and a gas exhaust passage for discharging the gas in the purification treatment vessel to the outside of the housing, wherein the quartz glass workpiece held by the holding means can be subjected to purification treatment in the purification treatment vessel.

Description

本発明は、半導体工業用等に使用される石英ガラス治具等の石英ガラス加工品の純化処理装置及び純化処理方法に関する。 The present invention relates to a purification apparatus and a purification method for a quartz glass processed product such as a quartz glass jig used in the semiconductor industry.

半導体工業用に使用される石英ガラス治具は、天然石英ガラス素材から火加工などによって所望の形状に加工され、歪取りアニールなどを施して後、洗浄され、製品化される。 A quartz glass jig used for the semiconductor industry is processed into a desired shape from a natural quartz glass material by fire processing or the like, subjected to strain relief annealing, and then washed and commercialized.

このようにして製造される石英ガラス治具は、加工工程のなかの高温熱処理工程において、表面から深さ方向へ100μmまで、金属不純物が拡散し、最終工程の表層洗浄処理では、除去不能な深さまで汚染される。これらの金属不純物は半導体製造工程で高温熱処理時に放出されシリコンウェーハに付着して欠陥などの原因となる。特に、半導体工業用途では問題とされるNa、K、Li、Mg、Ca、Cr、Fe、Ni、Cuなどの金属不純物の放出は好ましくない。 In the quartz glass jig manufactured in this way, metal impurities diffuse from the surface to the depth of 100 μm in the high-temperature heat treatment step in the processing step, and the depth that cannot be removed by the surface cleaning process in the final step. It will be contaminated. These metal impurities are released during high-temperature heat treatment in the semiconductor manufacturing process and adhere to the silicon wafer, causing defects and the like. In particular, release of metal impurities such as Na, K, Li, Mg, Ca, Cr, Fe, Ni, and Cu, which is a problem in the semiconductor industry, is not preferable.

この対策として、石英ガラス治具製造工程の室内雰囲気をクリーン化したり、火加工用のバーナーを石英ガラスで作製したり、炉壁が特殊クリーン素材で作製されたアニール炉を使用するなどの試みがなされてきた。
上記の方法によって得られる石英ガラス治具は、確かに表層部分の汚染が減少し、半導体工業用に使用されてもシリコンウェーハの欠陥が少なく、効果が確認された。しかし、これらのそれぞれの対策を全て或いは個々に施す場合でも、そのコスト、手間は販売および製造上極めて負担の大きいものとなっている。
As countermeasures, attempts have been made to clean the indoor atmosphere of the quartz glass jig manufacturing process, to make a burner for fire processing with quartz glass, or to use an annealing furnace whose furnace wall is made of a special clean material. Has been made.
In the quartz glass jig obtained by the above method, the contamination of the surface layer portion is surely reduced, and even when used for the semiconductor industry, there are few defects in the silicon wafer, and the effect was confirmed. However, even when all of these measures are taken individually or individually, the cost and labor are extremely burdensome in terms of sales and manufacturing.

そこで、半導体工業界で使用される石英ガラス治具等の石英ガラス加工品に対して、低コストで簡便かつ確実に、表層クリーン度を向上させることができる純化処理方法として、HClやその他のCl含有ガスを使用する方法が提案されている(特許文献1〜5)。しかしながら、これらの石英ガラス加工品の純化処理方法を実際に効率よく実施する純化処理装置についてはいまだ何らの提案もなされていないのが現状である。 Therefore, HCl and other Cl are available as purification methods that can improve surface cleanliness easily and reliably at low cost for quartz glass processed products such as quartz glass jigs used in the semiconductor industry. Methods using the contained gas have been proposed (Patent Documents 1 to 5). However, at present, no proposal has been made yet for a purification apparatus for actually carrying out the purification method for these processed quartz glass products efficiently.

特開2003−012333号公報JP 2003-012333 A 特開2004−059412号公報JP 2004-059412 A 特開2003−323246号公報JP 2003-323246 A 特開2006−306675号公報JP 2006-306675 A 特開2006−315886号公報JP 2006-315886 A

本発明の目的は、半導体工業界等で使用される石英ガラス治具等の石英ガラス加工品に対して、表層クリーン度を向上させる純化処理装置及びその装置を用いた純化処理方法を提供することにある。 An object of the present invention is to provide a purification apparatus for improving surface cleanliness and a purification method using the apparatus for a quartz glass processed product such as a quartz glass jig used in the semiconductor industry and the like. It is in.

上記課題を解決するために、本発明の石英ガラス加工品の純化処理装置は、
天壁に貫通孔を開穿しかつ底壁に底壁開口部を開口した筐体と、
前記筐体の底壁開口部に下端部分が密封状態で挿着されるとともに下端部が該筐体の底壁から下方に垂下した状態で該筐体内部に設けられた円筒状の石英ガラス製純化処理容器と、
前記純化処理容器の外方に設けられかつ前記純化処理容器内部を加熱してヒートゾーンを形成する作用を行うヒーターと、
純化処理の対象となる石英ガラス加工品を前記純化処理容器に対して格納及び取り出しするために前記純化処理容器の底部を開口して設けられた石英ガラス加工品格納及び取り出し用の底部開口部と、
前記底部開口部を密封状態で閉塞する閉塞手段と、
純化処理前には石英ガラス加工品を前記純化処理容器内に下方から格納することができ、純化処理時には石英ガラス加工品が前記純化処理容器と直接接触しないように該石英ガラス加工品を前記純化処理容器のヒートゾーン内に保持することができ、純化処理終了後には純化処理後の石英ガラス加工品を下方に搬出することができるようにした上下動可能な保持手段と、
前記純化処理容器の下端部に設けられかつ前記純化処理容器内にガスを導入するためのガス導入部と、
前記純化処理容器の上部に開穿された排気口と前記筐体の天壁に開穿された貫通孔とを連通して形成されかつ純化処理容器内のガスを前記筐体の外部に排気するためのガス排気部と、を含み、
前記保持手段に保持された石英ガラス加工品を前記純化処理容器内で純化処理することができるようにしたことを特徴とする。
In order to solve the above-described problems, a purification apparatus for a processed quartz glass product of the present invention includes:
A housing having a through hole in the top wall and a bottom wall opening in the bottom wall;
Made of cylindrical quartz glass provided inside the casing with the lower end portion inserted in a sealed state into the bottom wall opening of the casing and the lower end hanging downward from the bottom wall of the casing A purification vessel;
A heater that is provided outside the purification container and that heats the interior of the purification container to form a heat zone;
A bottom opening for storing and taking out a quartz glass processed product provided by opening the bottom of the purification processing container in order to store and take out the quartz glass processed product to be purified from the purification processing container. ,
A closing means for closing the bottom opening in a sealed state;
Before the purification treatment, the quartz glass processed product can be stored in the purification processing container from below, and the quartz glass processed product is not purified directly in contact with the purification processing container during the purification treatment. A holding means that can be held in the heat zone of the processing vessel and can move up and down after the purification process is completed, so that the quartz glass processed product after the purification process can be carried out downward,
A gas introduction part provided at a lower end of the purification treatment container and for introducing gas into the purification treatment container;
The exhaust port opened in the upper part of the purification container and the through-hole opened in the top wall of the casing are formed to communicate with each other, and the gas in the purification container is exhausted to the outside of the casing. And a gas exhaust for
The processed quartz glass product held by the holding means can be purified in the purification vessel.

前記筐体の底壁開口部に前記純化処理容器の下端部分を挿着した時に、該底壁開口部と該純化処理容器の挿着を密封状態とするため、該底壁開口部の当接面に弾性を有するOリングを設置しかつ該Oリングの設置部分を冷却する冷却機構を設けるのが好ましい。 When the lower end portion of the purification treatment container is inserted into the bottom wall opening of the housing, the bottom wall opening and the purification treatment container are brought into a sealed state so that the bottom wall opening is brought into contact with the bottom wall opening. It is preferable to provide an O-ring having elasticity on the surface and a cooling mechanism for cooling the installation portion of the O-ring.

前記円筒状の純化処理容器が、上段部円筒体と下段部円筒体とを連設してなる2段構造を有し、前記下段部円筒体の内径が前記上段部円筒体の内径を超える大きさである構成とすることができる。 The cylindrical purification vessel has a two-stage structure in which an upper stage cylindrical body and a lower stage cylindrical body are connected in series, and the inner diameter of the lower stage cylindrical body exceeds the inner diameter of the upper stage cylindrical body. It can be set as the structure which is.

前記ガスを導入するガス導入部を前記純化処理容器の下部中央部を含む範囲に1以上配置する構造とするのが好適である。 It is preferable that one or more gas introduction portions for introducing the gas are arranged in a range including a lower center portion of the purification treatment container.

前記石英ガラス加工品を保持する保持手段としては、上面に石英ガラス加工品が載置される天板と、該天板の下方に所定間隔を介して設置された底板と、該天板及び底板間に所定間隔をおいて取り付けられた複数の支柱と、該支柱を介して該天板及び底板間に所定間隔をおいて重層された複数の不透明板からなる遮熱手段と、を有する構造とするのが好ましい。 The holding means for holding the quartz glass processed product includes a top plate on which the quartz glass processed product is placed, a bottom plate disposed below the top plate with a predetermined interval, and the top plate and the bottom plate. A structure having a plurality of struts attached at a predetermined interval therebetween, and a heat shield means comprising a plurality of opaque plates stacked with a predetermined interval between the top plate and the bottom plate via the struts. It is preferable to do this.

前記閉塞手段としては、前記保持手段の天板の上面に石英ガラス加工品を載置させた状態で上昇させて該石英ガラス加工品を前記純化処理容器内に格納した状態で、前記保持手段の底板の外周辺部が前記純化処理容器の底部開口部の周縁部に密封状態で当接することによって該底部開口部を密封状態で閉塞する構成を採用することができる。   As the closing means, the quartz glass processed product is raised in a state where it is placed on the upper surface of the top plate of the holding means, and the quartz glass processed product is stored in the purification processing container, It is possible to employ a configuration in which the bottom opening is closed in a sealed state by the outer peripheral portion of the bottom plate contacting the peripheral edge of the bottom opening of the purification treatment container in a sealed state.

本発明の石英ガラス加工品の純化処理方法は、本発明の石英ガラス加工品の純化処理装置を用いる石英ガラス加工品の純化処理方法であって、
純化処理の対象となる石英ガラス加工品を前記純化処理容器の底部開口部より前記純化処理容器内に格納する工程と
前記純化処理容器の底部開口部を閉塞する工程と
前記純化処理容器内を不活性ガスで置換する工程と、
純化処理ガスを前記純化処理容器内に流入させつつ前記純化処理容器内の温度を室温から所定の純化処理温度まで昇温する昇温工程と、
前記純化処理ガスを継続して前記純化処理容器内に流入させつつ所定の純化処理温度で所定の時間をかけて純化処理を行う純化処理工程と、
純化処理終了後、前記純化処理ガスを前記純化処理容器内に流入させつつガス切り替え温度まで降温する工程と、
前記純化処理容器内の温度がガス切り替え温度に達した時、前記純化処理ガスを不活性ガスに切り替える工程と、
前記不活性ガスを前記純化処理容器内に流入させつつ前記石英ガラス加工品の取り出し可能温度まで降温する工程と、
前記純化処理容器内の温度が取り出し可能温度に達した時、前記石英ガラス加工品を前記純化処理容器の底部開口部より取り出す工程と、
を有することを特徴とする。
The purification method for a processed quartz glass product of the present invention is a purification method for a processed quartz glass product using the purification apparatus for the processed quartz glass product of the present invention,
A process for storing a processed quartz glass product to be purified in the purification container from the bottom opening of the purification container, a process for closing the bottom opening in the purification container, and the inside of the purification container are not performed. Replacing with active gas;
A temperature raising step of raising the temperature in the purification treatment vessel from room temperature to a predetermined purification treatment temperature while flowing a purification treatment gas into the purification treatment vessel;
A purification process step of performing a purification process over a predetermined time at a predetermined purification temperature while continuously flowing the purification gas into the purification container;
A step of lowering the gas to a gas switching temperature while flowing the purification gas into the purification container after the purification process is completed;
A step of switching the purification gas to an inert gas when the temperature in the purification vessel reaches a gas switching temperature;
Cooling the inert gas into the purification container while lowering the quartz glass processed product to a temperature at which it can be removed;
When the temperature in the purification container reaches a temperature that can be taken out, the step of taking out the processed quartz glass product from the bottom opening of the purification container;
It is characterized by having.

前記純化処理ガスとしては、HCl又はClを含むガスを使用することができる。前記純化処理温度を900℃以上1300℃以下とし、純化処理時間を30分以上とするのが好適である。前記純化処理後のガス切り替え温度としては800℃以上850℃以下とすればよい。   As the purification treatment gas, a gas containing HCl or Cl can be used. It is preferable that the purification treatment temperature is 900 ° C. or more and 1300 ° C. or less, and the purification treatment time is 30 minutes or more. The gas switching temperature after the purification treatment may be 800 ° C. or higher and 850 ° C. or lower.

前記純化処理ガスの前記純化処理容器内への純化ガス流入作業を、前記純化処理ガスの前記ガス導入部からの純化処理ガスの導入とともに純化処理に用いられた使用済みの純化処理ガスの前記ガス排気部からの排気によって行い、この純化処理ガス流入作業に際して純化処理容器内の圧力が大気圧より高くかつ1kPaより小さくなるように制御するのが好ましい。 The purifying gas inflow operation into the purifying container of the purifying gas is used for the purifying gas used in the purifying process together with the introduction of the purifying gas from the gas introduction part of the purifying gas. It is preferable that the exhaust gas is exhausted from the exhaust section and controlled so that the pressure in the purification container is higher than the atmospheric pressure and lower than 1 kPa during the purification gas inflow operation.

本発明の石英ガラス加工品の純化処理装置によれば、半導体工業界等で使用される石英ガラス治具等の石英ガラス加工品に対して、半導体処理工程中等で発生する石英ガラス加工品の表層汚染の殆どを除去し、その表層クリーン度を簡便かつ確実に向上させることができるという効果が達成される。本発明の石英ガラス加工品の純化処理方法によれば、本発明装置を使用して効率的に石英ガラス加工品の純化処理を行うことができるという利点がある。 According to the apparatus for purifying a processed quartz glass product of the present invention, the surface layer of the processed quartz glass product generated during the semiconductor processing process or the like for a processed quartz glass product such as a quartz glass jig used in the semiconductor industry or the like. The effect is achieved that most of the contamination can be removed and the surface cleanliness can be improved easily and reliably. According to the purification method for a processed quartz glass product of the present invention, there is an advantage that the purified silica glass product can be efficiently purified using the apparatus of the present invention.

本発明の石英ガラス加工品の純化処理装置において石英ガラス加工品を純化処理容器内に格納して純化処理を行っている状態を示す断面的説明図である。It is sectional explanatory drawing which shows the state which stores the quartz glass processed goods in the purification processing container, and is performing the purification process in the purification processing apparatus of the quartz glass processed goods of this invention. 本発明の石英ガラス加工品の純化処理装置において石英ガラス加工品を純化処理容器から下方に搬出された状態を示す断面的説明図である。It is sectional explanatory drawing which shows the state which carried out the quartz glass processed goods below from the purification processing container in the purification processing apparatus of the quartz glass processed goods of this invention. 図1の矢視A部分の拡大断面説明図である。It is an expanded sectional explanatory view of the arrow A part of FIG. 図3の状態から保持手段を下方に降下させた状態を示す拡大断面説明図である。FIG. 4 is an enlarged cross-sectional explanatory view showing a state where the holding means is lowered downward from the state of FIG. 3. セット台座の構造を示す上面説明図である。It is upper surface explanatory drawing which shows the structure of a set base. セット台座の分解側面説明図である。It is decomposition | disassembly side surface explanatory drawing of a set base. 図6に示した各部材を組み立ててセット台座とした状態を示す側面説明図である。It is side surface explanatory drawing which shows the state which assembled each member shown in FIG. 6, and was set as the set base. 本発明の石英ガラス加工品の純化処理方法における基本的な純化処理のパターンについての処理時間と処理温度の関係を示すグラフである。It is a graph which shows the relationship between processing time and processing temperature about the pattern of the basic purification process in the purification processing method of the quartz glass processed goods of this invention. 本発明の純化処理装置における圧力管理機構の一例を示す概略説明図である。It is a schematic explanatory drawing which shows an example of the pressure management mechanism in the purification processing apparatus of this invention. 本発明の純化処理装置によって一つの石英ガラス加工品の純化処理を行う場合の純化処理ガスの流れの状態の一例を示す説明図である。It is explanatory drawing which shows an example of the state of the flow of the purification process gas in the case of performing the purification process of one quartz glass processed goods by the purification processing apparatus of this invention. 本発明の純化処理装置によって別の石英ガラス加工品の純化処理を行う場合の純化処理ガスの流れの状態の一例を示す説明図である。It is explanatory drawing which shows an example of the state of the flow of the purification process gas in the case of performing the purification process of another quartz glass processed goods by the purification processing apparatus of this invention. 本発明の純化処理装置によってさらに別の石英ガラス加工品の純化処理を行う場合の純化処理ガスの流れの状態の一例を示す説明図である。It is explanatory drawing which shows an example of the state of the flow of the purification process gas in the case of performing the purification process of another quartz glass processed goods by the purification processing apparatus of this invention.

以下に本発明の実施の形態を添付図面に基づいて説明するが、これらの実施の形態は例示的に示されるもので、本発明の技術思想から逸脱しない限り種々の変形が可能なことはいうまでもない。 Embodiments of the present invention will be described below with reference to the accompanying drawings, but these embodiments are exemplarily shown, and various modifications can be made without departing from the technical idea of the present invention. Not too long.

図1は本発明の石英ガラス加工品の純化処理装置において石英ガラス加工品を純化処理容器内に格納して純化処理を行っている状態を示す断面的説明図である。図2は本発明の石英ガラス加工品の純化処理装置において石英ガラス加工品を純化処理容器から下方に搬出された状態を示す断面的説明図である。図1及び図2において、10は本発明に係る石英ガラス加工品の純化処理装置である。該純化処理装置10は、ベース枠体11とベース枠体11上に設置された該筐体12を有している。該筐体12は、天壁14、側壁16、及び底壁18からなり、内部には中空内部20が形成されている。該天壁14には貫通孔22が開穿されており、かつ該底壁18には底壁開口部24が穿設されている。   FIG. 1 is a cross-sectional explanatory view showing a state in which a quartz glass processed product is stored in a purification processing container in a purification apparatus for a quartz glass processed product according to the present invention and is purified. FIG. 2 is a cross-sectional explanatory view showing a state in which the processed quartz glass product is transported downward from the purification processing container in the purification apparatus for the processed quartz glass product of the present invention. 1 and 2, reference numeral 10 denotes a purification apparatus for a processed quartz glass product according to the present invention. The purification processing apparatus 10 includes a base frame 11 and the casing 12 installed on the base frame 11. The housing 12 includes a top wall 14, a side wall 16, and a bottom wall 18, and a hollow interior 20 is formed therein. A through hole 22 is formed in the top wall 14, and a bottom wall opening 24 is formed in the bottom wall 18.

26は円筒状の石英ガラス製純化処理容器で、その上部には排気口28が開穿されかつその底部には底部開口部30が穿設されている。該石英ガラス製純化処理容器26は、前記筐体12の底壁開口部24に下端部分が密封状態で挿着されるとともに下端部が該筐体12の側壁16から下方に垂下した状態で前記筐体12の中空内部20に位置するように設けられている。前記底部開口部30は、純化処理の対象となる石英ガラス加工品Gを前記純化処理容器26に対して格納及び取り出しするために設けられている。前記底部開口部30は純化処理を行う場合には密封状態で閉塞する必要があるが、この閉塞作用を行う閉塞手段としては後述する構成を採用することができる。 Reference numeral 26 denotes a cylindrical quartz glass purification treatment vessel, which has an exhaust port 28 opened at the top thereof and a bottom opening 30 formed at the bottom thereof. The purification vessel made of quartz glass 26 is inserted in the bottom wall opening 24 of the housing 12 with its lower end portion sealed, and the lower end portion hangs downward from the side wall 16 of the housing 12. It is provided so as to be positioned in the hollow interior 20 of the housing 12. The bottom opening 30 is provided for storing and taking out a quartz glass processed product G to be purified from the purification container 26. When performing the purification process, the bottom opening 30 needs to be closed in a sealed state. However, as the closing means for performing the closing action, a configuration described later can be adopted.

前記円筒状の純化処理容器26は、図1及び図2に示したように、上段部円筒体26aと下段部円筒体26bとを連設してなる2段構造を有し、前記下段部円筒体26bの内径が前記上段部円筒体26aの内径を超える大きさである構成とするのが好ましい。該上段部円筒体26aによって形成される純化処理容器26の内部空間はヒートゾーンであり、このヒートゾーンに石英ガラス加工品Gが収納される。このヒートゾーンに後記するヒーター32からのヒーター熱が輻射熱及び伝達熱として有効に伝わるように純化処理容器26の上段部円筒体26aの範囲は好ましくは透明石英ガラスによって形成される。一方、該下段部円筒体26bの範囲は、後述する第1Oリング56、第2Oリング70及び第3Oリング76の熱保護のため、好ましくは不透明石英ガラスによって形成し、熱透過率を小とする。不透明石英ガラスを使用することによって輻射熱を遮ることができ、また不透明石英ガラスは内部に気泡を含んでいるため熱が伝達し難くなるという特性を有している。 As shown in FIGS. 1 and 2, the cylindrical purification container 26 has a two-stage structure in which an upper cylindrical body 26a and a lower cylindrical body 26b are connected to each other, and the lower cylindrical cylinder is formed. It is preferable that the inner diameter of the body 26b is larger than the inner diameter of the upper cylindrical body 26a. The internal space of the purification container 26 formed by the upper cylindrical body 26a is a heat zone, and the processed quartz glass product G is stored in the heat zone. The range of the upper cylindrical body 26a of the purification container 26 is preferably made of transparent quartz glass so that heater heat from the heater 32 described later can be effectively transmitted to the heat zone as radiant heat and transmitted heat. On the other hand, the range of the lower cylindrical portion 26b is preferably made of opaque quartz glass for thermal protection of the first O-ring 56, the second O-ring 70, and the third O-ring 76, which will be described later, and has a low heat transmittance. . Radiant heat can be shielded by using opaque quartz glass, and opaque quartz glass has a characteristic that heat is difficult to transfer because it contains bubbles inside.

32はヒーターで、前記筐体12の側壁16の内面に複数個が設置されている。該ヒーター32は、前記純化処理容器26の外方から該純化処理容器26の内部を加熱してヒートゾーンを形成する作用を行う。 A plurality of heaters 32 are provided on the inner surface of the side wall 16 of the housing 12. The heater 32 functions to heat the inside of the purification processing container 26 from the outside of the purification processing container 26 to form a heat zone.

34は石英ガラス加工品Gを保持する保持手段である。該保持手段34は、石英ガラス加工品Gをセット載置するとともに石英ガラス加工品Gの保温作用を行うセット台座35を有している。該セット台座35は、上面に石英ガラス加工品Gが載置される天板36と、該天板の下方に所定間隔を介して設置された底板38とを有している。該天板36及び底板38間には所定間隔をおいて複数の支柱40が取り付けられている。該支柱40を介して該天板36及び底板38との間には所定間隔をおいて複数の不透明板42が重層状態で設けられている。これら複数の不透明板42が遮熱手段として作用する。なお、41は底板38の上面の適宜位置に立設された短尺の受け柱で、後述するように上部側に位置する複数枚の不透明板42を下方から載置支持するものである。 Reference numeral 34 denotes a holding means for holding the processed quartz glass product G. The holding means 34 has a set pedestal 35 on which the quartz glass processed product G is set and placed, and the quartz glass processed product G is kept warm. The set pedestal 35 has a top plate 36 on which the quartz glass processed product G is placed on the upper surface, and a bottom plate 38 installed below the top plate at a predetermined interval. A plurality of support columns 40 are attached between the top plate 36 and the bottom plate 38 at a predetermined interval. A plurality of opaque plates 42 are provided in a stacked state between the top plate 36 and the bottom plate 38 via the support column 40 at a predetermined interval. The plurality of opaque plates 42 act as heat shield means. Reference numeral 41 denotes a short receiving column which is erected at an appropriate position on the upper surface of the bottom plate 38, and supports and mounts a plurality of opaque plates 42 located on the upper side from below as will be described later.

前記ベース枠体11には側柱44が隣接して立設されている。該側柱44には可動支持板46が上下動自在に取り付けられている。この可動支持板46の上面に前記セット台座35、即ち保持手段34が載置され、該可動支持板46を上下動することによって、前記セット台座35、即ち保持手段34が上下動するようになっている。 Side pillars 44 are erected adjacent to the base frame 11. A movable support plate 46 is attached to the side column 44 so as to be movable up and down. The set pedestal 35, that is, the holding means 34 is placed on the upper surface of the movable support plate 46. By moving the movable support plate 46 up and down, the set pedestal 35, that is, the holding means 34 moves up and down. ing.

前記保持手段34は、上記のような構成を有しているので、純化処理前には石英ガラス加工品Gを前記純化処理容器26内に下方から格納することができ、純化処理時には石英ガラス加工品Gが前記純化処理容器26と直接接触しないように該石英ガラス加工品Gを前記純化処理容器26のヒートゾーン内に保持することができ、純化処理終了後には純化処理後の石英ガラス加工品Gを下方に搬出することができる。 Since the holding means 34 has the above-described configuration, the quartz glass processed product G can be stored in the purification processing vessel 26 from below before the purification process, and the quartz glass processing is performed during the purification process. The quartz glass processed product G can be held in the heat zone of the purification container 26 so that the product G does not come into direct contact with the purification container 26, and after the purification process, the quartz glass processed product after the purification process. G can be carried out downward.

48は前記純化処理容器26内に純化処理ガス及び不活性ガス等のガスを導入するためのガス導入部で、前記セット台座35の下端部分に設けられている。このガス導入部48についてはセット台座35の構造とともに後に詳述する。50は前記純化処理容器26内の純化処理ガス及び不活性ガス等のガスを前記筐体12の外部に排気するためのガス排気部である。該ガス排気部50は、前記純化処理容器26の上部に開穿された排気口28と前記筐体12の天壁14に開穿された貫通孔22とを連通して形成されている。 Reference numeral 48 denotes a gas introduction part for introducing a gas such as a purification process gas and an inert gas into the purification process container 26, and is provided at the lower end portion of the set base 35. The gas introduction part 48 will be described in detail later together with the structure of the set base 35. Reference numeral 50 denotes a gas exhaust unit for exhausting gases such as a purification process gas and an inert gas in the purification process container 26 to the outside of the casing 12. The gas exhaust part 50 is formed by communicating an exhaust port 28 opened in the upper part of the purification treatment container 26 with a through hole 22 opened in the top wall 14 of the housing 12.

図3は図1の矢視A部分の拡大断面説明図である。図4は図3の状態から保持手段を下方に降下させた状態を示す拡大断面説明図である。前記純化処理容器26の底部開口部30を閉塞する手段、即ち前記した閉塞手段としては、図3及び図4に示すように、前記保持手段34の天板36の上面に石英ガラス加工品Gを載置させた状態で上昇させて該石英ガラス加工品Gを前記純化処理容器26内に格納した状態で、前記保持手段34の底板38の周辺部が前記純化処理容器26の壁体26cの下端部に設けられた周縁部材52に密封状態で当接することによって該底部開口部30を密封状態で閉塞する構成を採用することができる。   FIG. 3 is an enlarged cross-sectional explanatory view of the portion A in FIG. 4 is an enlarged cross-sectional explanatory view showing a state in which the holding means is lowered downward from the state of FIG. As means for closing the bottom opening 30 of the purification container 26, that is, as the closing means described above, as shown in FIGS. 3 and 4, a quartz glass processed product G is placed on the top surface 36 of the holding means 34. In a state where the quartz glass processed product G is stored in the purification processing container 26 while being raised, the peripheral portion of the bottom plate 38 of the holding means 34 is the lower end of the wall 26c of the purification processing container 26. It is possible to adopt a configuration in which the bottom opening 30 is closed in a sealed state by contacting the peripheral member 52 provided in the portion in a sealed state.

図3及び図4に示したように、前記保持手段34の底板38の周辺部の上面には底板環状溝部54が形成されており、該底板環状溝部54には耐熱性及び弾性を有する第1Oリング56が嵌合せしめられている。一方、前記純化処理容器26の底部開口部30の周縁部には前記した周縁部材52が設けられている。該周縁部材52は、前記純化処理容器26の壁体26cの下端部の外側面に当接して設けられた外側面部材58と、前記純化処理容器26の壁体26cの下端部の下面に当接して設けられた下面部材60と、該下面部材60の外面側に受け段部62を形成するように設けられた段部補助部材64とから構成されている。該受け段部62は、前記保持手段34の底板38の周辺部を第1Oリング56を介して密封状態で当接受容し該底部開口部30を密封状態で閉塞する。   As shown in FIGS. 3 and 4, a bottom plate annular groove 54 is formed on the upper surface of the peripheral portion of the bottom plate 38 of the holding means 34. The bottom plate annular groove 54 has a first O having heat resistance and elasticity. A ring 56 is fitted. On the other hand, the peripheral member 52 described above is provided at the peripheral portion of the bottom opening 30 of the purification container 26. The peripheral member 52 contacts the outer surface member 58 provided in contact with the outer surface of the lower end portion of the wall body 26c of the purification treatment container 26, and the lower surface of the lower end portion of the wall body 26c of the purification treatment container 26. The lower surface member 60 provided in contact with the lower surface member 60 and a stepped auxiliary member 64 provided so as to form a receiving stepped portion 62 on the outer surface side of the lower surface member 60 are configured. The receiving step portion 62 abuts and receives the peripheral portion of the bottom plate 38 of the holding means 34 through the first O-ring 56 in a sealed state, and closes the bottom opening portion 30 in a sealed state.

前記外側面部材58には、図3及び図4に示したように、内面側に幅狭の第1段部66及び該第1段部66の上部には幅広の第2段部68が連続して設けられている。前記第1段部66には第2Oリング70が嵌合されている。72は第2段部68に配置された固定部材で、第1段部66に嵌合された第2Oリング70を固定する働きをする。該外側面部材58は、前記純化処理容器26の壁体26cの下端部の外側面に該第2Oリング70を介して密封状態で当接して設置され、その密封状態が維持される。   As shown in FIGS. 3 and 4, the outer surface member 58 has a narrow first step portion 66 on the inner surface side and a wide second step portion 68 on the upper portion of the first step portion 66. Is provided. A second O-ring 70 is fitted to the first step portion 66. Reference numeral 72 denotes a fixing member disposed on the second step portion 68 and serves to fix the second O-ring 70 fitted to the first step portion 66. The outer surface member 58 is installed in contact with the outer surface of the lower end portion of the wall 26c of the purification container 26 in a sealed state via the second O-ring 70, and the sealed state is maintained.

前記下面部材60の上面外側には下面部材環状溝部74が形成されており、該下面部材環状溝部74には耐熱性及び弾性を有する第3Oリング76が嵌合せしめられている。前記下面部材60は、前記純化処理容器26の壁体26cの下端部の下面に該第3Oリング76を介して密封状態で当接して設置され、その密封状態が維持される。一方、前記下面部材60の上面内側には環状受け溝部78が形成されており、該環状受け溝部78には水冷機構等の冷却機構80が設けられている。前記冷却機構80は前記第2Oリング70の熱劣化を防止する作用を行うものである。なお、該第1Oリング56、第2Oリング70及び第3Oリング76の材質としては、耐熱性を有するフッ素ゴム、例えばバイトン(登録商標)ゴムを用いるのが好適である。   A lower surface member annular groove 74 is formed outside the upper surface of the lower surface member 60, and a third O-ring 76 having heat resistance and elasticity is fitted into the lower surface member annular groove 74. The lower surface member 60 is installed in contact with the lower surface of the lower end portion of the wall 26c of the purification container 26 in a sealed state via the third O-ring 76, and the sealed state is maintained. On the other hand, an annular receiving groove 78 is formed inside the upper surface of the lower surface member 60, and a cooling mechanism 80 such as a water cooling mechanism is provided in the annular receiving groove 78. The cooling mechanism 80 functions to prevent thermal degradation of the second O-ring 70. As the material of the first O-ring 56, the second O-ring 70, and the third O-ring 76, it is preferable to use a heat-resistant fluoro rubber, for example, Viton (registered trademark) rubber.

図5はセット台座の構造を示す上面説明図である。図6はセット台座の分解側面説明図である。図7は図6に示した各部材を組み立ててセット台座とした状態を示す側面説明図である。前述したように、前記セット台座35は、天板36と、該天板36の下方に所定間隔を介して設置された底板38とを有し、該天板36及び底板38間には所定間隔をおいて複数(図5〜図7の例では、1本の内側支柱40aと4本の外側支柱40bの合計5本)の支柱40が設けられている。該支柱40を介して該天板36及び底板38との間には所定間隔をおいて複数(図5〜図7の例では15枚)の不透明板42が重層状態で設けられている。また、該底板38の上面には複数本(図5〜図7の例では4本)の受け柱41が設けられている。   FIG. 5 is an explanatory top view showing the structure of the set base. FIG. 6 is an exploded side view of the set base. FIG. 7 is an explanatory side view showing a state where the members shown in FIG. 6 are assembled into a set base. As described above, the set pedestal 35 has a top plate 36 and a bottom plate 38 disposed below the top plate 36 with a predetermined interval, and a predetermined interval is provided between the top plate 36 and the bottom plate 38. A plurality of columns 40 (a total of five columns including one inner column 40a and four outer columns 40b in the example of FIGS. 5 to 7) are provided. A plurality of (15 in the example of FIGS. 5 to 7) opaque plates 42 are provided in a multilayered manner with a predetermined distance between the top plate 36 and the bottom plate 38 via the support column 40. In addition, a plurality of (four in the example of FIGS. 5 to 7) receiving posts 41 are provided on the upper surface of the bottom plate 38.

前記セット台座35は、図6によく示されるように、上部台座部材35aと下部台座部材35bとに分解可能とされている。該上部台座部材35aは、前記天板36と複数枚(図6の例では12枚)の上部不透明板42aから構成されている。前記下部台座部材35bは、前記底板38と該底板38の上面に設けられた複数本の長尺の支柱40と同じく該底板38の上面に設けられた複数本の短尺の受け柱41とこれらの支柱40及び受け柱41に取り付けられた複数枚(図6の例では3枚)の下部不透明板42bとから構成されている。図6に示すように、前記天板36と複数枚の上部不透明板42aの支柱40に対応する位置には貫通孔82が穿設されており、該貫通孔82に支柱40を挿通することによって上部不透明板42aが支柱40に取り付けられるとともに上部台座部材35aが複数本の短尺の受け柱41上に設置される。その結果、図7に示すように、下部台座部材35b上に上部台座部材35aが挿着された状態となってセット台座35が形成されることとなる。   As shown in FIG. 6, the set pedestal 35 can be disassembled into an upper pedestal member 35a and a lower pedestal member 35b. The upper pedestal member 35a includes the top plate 36 and a plurality of upper opaque plates 42a (12 in the example of FIG. 6). The lower pedestal member 35b includes the bottom plate 38 and a plurality of long columns 40 provided on the top surface of the bottom plate 38, as well as a plurality of short receiving columns 41 provided on the top surface of the bottom plate 38, and the like. It is composed of a plurality of (three in the example of FIG. 6) lower opaque plates 42b attached to the columns 40 and the receiving columns 41. As shown in FIG. 6, a through hole 82 is formed at a position corresponding to the column 40 of the top plate 36 and the plurality of upper opaque plates 42 a, and by inserting the column 40 into the through hole 82, The upper opaque plate 42a is attached to the support column 40, and the upper base member 35a is installed on a plurality of short receiving columns 41. As a result, as shown in FIG. 7, the set pedestal 35 is formed with the upper pedestal member 35a being inserted on the lower pedestal member 35b.

前記支柱40は、図5によく示されるように、天板36(及び底板38)の中央部に位置する内側支柱40aと天板36(及び底板38)の周辺部に位置する複数本(図5の例では4本)の外側支柱40bとから構成されている。該内側支柱40aには支柱の全長に亘って内側通気貫通孔48aが穿設されている。また、外側支柱40bの少なくとも1本(図5の例では4本全て)に支柱の全長に亘って外側通気貫通孔48bが穿設されている。これらの内側通気貫通孔48a及び外側通気貫通孔48bは、前述したガス導入部48として作用し、前記純化処理容器26内に純化処理ガス及び不活性ガス等のガスを導入する働きを行う。このように内側通気貫通孔48aによって前記セット台座35の中央部に純化処理ガスを誘導し、また少なくとも一つの外側通気貫通孔48bによって前記セット台座35の周辺部に純化処理ガスを誘導することができるので、後述する図10〜図12に示すように純化処理の対象である石英ガラス加工品Gの内側及び外側のいずれに対しても純化処理ガスを満遍なく誘導することが可能となるので効果的に純化処理を実施できるという利点がある。なお、図6において、符号36aは天板36に開穿された天板貫通孔である。図6及び図7において、符号38aは底板38上に設けられた底板基板である。   As shown in FIG. 5, the support column 40 has a plurality of inner support columns 40a positioned at the center of the top plate 36 (and the bottom plate 38) and a plurality of columns positioned in the periphery of the top plate 36 (and the bottom plate 38). In the example of FIG. 5, it is composed of four outer struts 40b. The inner support column 40a has an inner ventilation through hole 48a extending over the entire length of the support column. Further, at least one outer strut 40b (all four in the example of FIG. 5) has an outer ventilation through hole 48b extending over the entire length of the strut. The inner ventilation through hole 48a and the outer ventilation through hole 48b function as the gas introduction portion 48 described above, and perform a function of introducing a gas such as a purification gas and an inert gas into the purification chamber 26. As described above, the purifying gas may be guided to the central portion of the set pedestal 35 by the inner vent through hole 48a, and the purifying gas may be guided to the peripheral portion of the set pedestal 35 by at least one outer vent through hole 48b. Therefore, as shown in FIGS. 10 to 12 to be described later, the purification gas can be uniformly guided to both the inside and the outside of the quartz glass processed product G to be purified, which is effective. There is an advantage that the purification process can be performed. In FIG. 6, reference numeral 36 a is a top plate through-hole opened in the top plate 36. 6 and 7, reference numeral 38 a is a bottom plate substrate provided on the bottom plate 38.

続いて、本発明の石英ガラス加工品の純化処理方法について図8を用いて説明するが、本発明の石英ガラス加工品の純化処理方法は、上述した本発明の石英ガラス加工品の純化処理装置を用いる石英ガラス加工品の純化処理方法であるので、装置については図1〜図7に示した図示例において使用した符号を用いて説明する。図8は本発明の石英ガラス加工品の純化処理方法における基本的な純化処理のパターンについての処理時間と処理温度の関係を示すグラフである。 Next, the method for purifying a processed quartz glass product according to the present invention will be described with reference to FIG. 8. The method for purifying a processed quartz glass product according to the present invention is a purification apparatus for a processed quartz glass product according to the present invention described above. Therefore, the apparatus will be described using the reference numerals used in the examples shown in FIGS. 1 to 7. FIG. 8 is a graph showing the relationship between the treatment time and the treatment temperature for the basic purification treatment pattern in the purification method for a processed quartz glass product of the present invention.

本発明の石英ガラス加工品の純化処理方法は、純化処理の対象となる石英ガラス加工品Gを純化処理容器26の底部開口部30より前記純化処理容器26内に格納する工程と、前記純化処理容器26の底部開口部30を閉塞する工程と、前記純化処理容器26内を不活性ガスで置換する工程と、純化処理ガスを前記純化処理容器26内に流入させつつ前記純化処理容器26内の温度を室温から所定の純化処理温度まで昇温する昇温工程(図8のステップ1)と、前記純化処理ガスを継続して前記純化処理容器26内に流入させつつ所定の純化処理温度で所定の時間をかけて純化処理を行う純化処理工程(図8のステップ2)と、純化処理終了後、前記純化処理ガスを前記純化処理容器26内に流入させつつガス切り替え温度まで降温する工程(図8のステップ3)と、前記純化処理容器26内の温度がガス切り替え温度に達した時、前記純化処理ガスを不活性ガスに切り替える工程と、前記不活性ガスを前記純化処理容器26内に流入させつつ前記石英ガラス加工品Gの取り出し可能温度まで降温する工程(図8のステップ4)と、前記純化処理容器26内の温度が取り出し可能温度に達した時、前記石英ガラス加工品Gを前記純化処理容器26の底部開口部30より取り出す工程と、を有することを特徴とする。   The method for purifying a quartz glass processed product according to the present invention includes a step of storing a quartz glass processed product G to be purified in a purification processing vessel 26 from a bottom opening 30 of the purification processing vessel 26, and the purification processing. A step of closing the bottom opening 30 of the vessel 26, a step of replacing the inside of the purification treatment vessel 26 with an inert gas, and a flow of the purification treatment gas into the purification treatment vessel 26 while flowing in the purification treatment vessel 26. A temperature raising step (step 1 in FIG. 8) for raising the temperature from room temperature to a predetermined purification temperature, and a predetermined purification temperature at a predetermined purification temperature while continuously flowing the purification gas into the purification vessel 26 And a step of lowering the temperature to the gas switching temperature while allowing the purification treatment gas to flow into the purification treatment container 26 after completion of the purification treatment. Step 3) in FIG. 8, a step of switching the purification gas to an inert gas when the temperature in the purification chamber 26 reaches a gas switching temperature, and the inert gas in the purification chamber 26. The step of lowering the quartz glass processed product G to a temperature at which the quartz glass processed product G can be taken out while flowing in, and when the temperature in the purification processing container 26 reaches the temperature that can be taken out, the quartz glass processed product G is And a step of taking out from the bottom opening 30 of the purification container 26.

前記純化処理ガスとしては、HCl又はClを含むガスを使用することができる。前記純化処理温度を900℃以上1300℃以下とし、純化処理時間を30分以上とするのが好適である。前記純化処理後のガス切り替え温度としては800℃以上850℃以下とすればよい。   As the purification treatment gas, a gas containing HCl or Cl can be used. It is preferable that the purification treatment temperature is 900 ° C. or more and 1300 ° C. or less, and the purification treatment time is 30 minutes or more. The gas switching temperature after the purification treatment may be 800 ° C. or higher and 850 ° C. or lower.

前記純化処理ガスの前記純化処理容器内への純化ガス流入作業を、前記純化処理ガスの前記ガス導入部からの純化処理ガスの導入とともに純化処理に用いられた使用済みの純化処理ガスの前記ガス排気部からの排気によって行い、この純化ガス流入作業に際して純化処理容器26内の圧力が大気圧より高くかつ1kPaより小さくなるように制御するのが好ましい。後記する純化処理容器26内のガス置換作業や純化処理中の純化処理ガスの純化処理容器26内への流入作業は、純化処理容器26内の圧力管理及びガス排気部50の開閉作業で行う。 The purifying gas inflow operation into the purifying container of the purifying gas is used for the purifying gas used in the purifying process together with the introduction of the purifying gas from the gas introduction part of the purifying gas. It is preferable that the exhaust gas is exhausted from the exhaust part and controlled so that the pressure in the purification treatment container 26 is higher than atmospheric pressure and lower than 1 kPa during the purification gas inflow operation. The gas replacement operation in the purification processing container 26 and the operation of inflow of the purification processing gas into the purification processing container 26 during the purification process, which will be described later, are performed by the pressure management in the purification processing container 26 and the opening / closing operation of the gas exhaust unit 50.

本発明装置における純化処理装置における圧力管理は、例えば図9に示した機構によって行われる。図9は本発明の純化処理装置における圧力管理機構の一例を示す概略説明図である。図9において、図1及び図2の部材と同一部材は同一符号で示される。 The pressure management in the purification apparatus in the apparatus of the present invention is performed by, for example, the mechanism shown in FIG. FIG. 9 is a schematic explanatory diagram showing an example of a pressure management mechanism in the purification apparatus of the present invention. 9, the same members as those in FIGS. 1 and 2 are denoted by the same reference numerals.

図9に示したように、ガス導入部48はガス導入通路49に連通している。該ガス導入通路49には、ガスの流量を測定表示する流量計84、導入弁86及び導入ガス圧力計88が設けられている。一方、ガス排気部50はガス排気通路51に連通している。該ガス排気通路51には、排気圧力計90及び排気弁92が設けられている。該排気圧力計90及び排気弁92は圧力調節指示計94を介して接続されている。上記各機器を制御することによって、前記純化処理容器26内の圧力が大気圧より高くかつ1kPaより小さくなるように制御することができる。 As shown in FIG. 9, the gas introduction part 48 communicates with the gas introduction passage 49. The gas introduction passage 49 is provided with a flow meter 84 for measuring and displaying the gas flow rate, an introduction valve 86 and an introduction gas pressure gauge 88. On the other hand, the gas exhaust part 50 communicates with the gas exhaust passage 51. The gas exhaust passage 51 is provided with an exhaust pressure gauge 90 and an exhaust valve 92. The exhaust pressure gauge 90 and the exhaust valve 92 are connected via a pressure adjustment indicator 94. By controlling each of the above devices, the pressure in the purification treatment container 26 can be controlled to be higher than atmospheric pressure and lower than 1 kPa.

本発明の純化処理方法は、純化処理ガス、例えば塩化水素ガス雰囲気にて石英ガラス加工品、例えば石英ガラス治具を熱処理することで、石英ガラス治具の表層の汚染を除去する、即ち純化する方法である。具体的な純化処理としては、純化処理温度はプログラム温度調整器にて処理温度と処理時間を設定制御する。処理手順は、昇温→温度維持→降温という簡単なパターンで、処理温度、処理時間及び処理ガス量などを設定する。 The purification method of the present invention removes contamination of the surface layer of the quartz glass jig, that is, purifies the quartz glass jig by heat-treating the quartz glass workpiece, for example, the quartz glass jig, in a purification gas, eg, hydrogen chloride gas atmosphere. Is the method. As a specific purification process, the purification temperature is set and controlled by a program temperature regulator. The processing procedure sets a processing temperature, a processing time, a processing gas amount, and the like with a simple pattern of temperature increase → temperature maintenance → temperature decrease.

基本的な純化処理のパターンは図8に示した通りである。ステップ1においては、純化処理容器内の温度を室温から約2時間かけて1100℃まで昇温する。純化処理ガスとして塩化水素ガスを用いた場合、そのガス流量は10L/分程度が好適である。ステップ2においては、ステップ1に続いて純化処理ガスを流入させている状態(10L/分程度)で1100℃で2時間30分維持する。ステップ3においては、ステップ2終了後、同様に純化処理ガスを流入させている状態(10L/分程度)で加熱を止めて(ヒーターをオフとして)自然冷却する。2時間程度で1100℃から800℃に降温する。ステップ4においては、塩化水素ガスの代わりに不活性ガス(例えば、窒素ガス)を流し(7L/分程度)不活性ガス(窒素)置換を行いつつ、引き続き自然冷却を行って、16時間程度で200℃まで降温する。そして、純化処理容器内を開放し純化処理済みの石英ガラス加工品の温度が取り扱える温度に下がるまで20分〜30分待ってクリーン手袋や樹脂製ピンセットを使って当該石英ガラス加工品を取り出す。 The basic pattern of the purification process is as shown in FIG. In Step 1, the temperature in the purification vessel is raised from room temperature to 1100 ° C. over about 2 hours. When hydrogen chloride gas is used as the purification treatment gas, the gas flow rate is preferably about 10 L / min. In step 2, in a state where purifying gas is introduced after step 1 (about 10 L / min), the temperature is maintained at 1100 ° C. for 2 hours and 30 minutes. In step 3, after the completion of step 2, the heating is stopped (with the heater turned off) in the state where the purification gas is similarly introduced (about 10 L / min) and natural cooling is performed. The temperature is lowered from 1100 ° C. to 800 ° C. in about 2 hours. In Step 4, an inert gas (for example, nitrogen gas) is flowed instead of hydrogen chloride gas (about 7 L / min), and the natural gas is continuously cooled while replacing the inert gas (nitrogen). The temperature is lowered to 200 ° C. Then, the inside of the purification container is opened, and the quartz glass processed product is taken out using clean gloves or resin tweezers after waiting for 20 to 30 minutes until the temperature of the purified quartz glass processed product drops to a temperature that can be handled.

なお、純化処理容器は純化処理前日より窒素等の不活性ガスで置換しておくことが必要である。本発明で使用する純化処理容器は一般の大気炉と異なり炉内の気密性があり、熱処理中に外気が侵入しない構造となっている。純化処理容器内に純化処理対象である石英ガラス加工品をセットする際には、純化処理容器を大気に開放するため、純化処理容器内に作業環境雰囲気が混入してしまう。そこで、純化処理容器内を不活性ガス、例えば窒素で置換し混入した雰囲気ガスを排除するものである。例えば、純化処理容器の内容積が650Lの場合、その容積の10倍の窒素(6.5m)を流入させることで純化処理容器内の窒素置換は完了する。 In addition, it is necessary to replace the purification container with an inert gas such as nitrogen from the day before the purification process. Unlike a general atmospheric furnace, the purification container used in the present invention has airtightness in the furnace, and has a structure in which outside air does not enter during heat treatment. When the quartz glass processed product to be purified is set in the purification container, the working environment atmosphere is mixed in the purification container because the purification container is opened to the atmosphere. Accordingly, the atmosphere gas mixed by replacing the inside of the purification processing container with an inert gas, for example, nitrogen is excluded. For example, when the internal volume of the purification container is 650 L, nitrogen substitution in the purification container is completed by introducing nitrogen (6.5 m 3 ) 10 times the volume.

純化処理の対象である石英ガラス加工品Gを純化処理装置にセットする際に、純化処理容器26を開放するため、汚染物質を含んだ外部の雰囲気ガスが純化処理容器26内の内部に取り込まれることになる。純化処理容器26内に取り込まれる汚染物質としては、空気、空気中の水分、その他のゴミ、塵埃等があるが、純化処理容器26内を不活性ガス、例えば窒素で置換することで、純化処理容器26内の汚染物質の量が減少する。 When the quartz glass processed product G to be purified is set in the purification apparatus, the purification container 26 is opened, so that an external atmospheric gas containing contaminants is taken into the purification container 26. It will be. Contaminants taken into the purification container 26 include air, moisture in the air, other dust, dust, and the like, but the purification process is performed by replacing the interior of the purification container 26 with an inert gas such as nitrogen. The amount of contaminants in the container 26 is reduced.

前述したように、本発明においては内側通気貫通孔48a及び外側通気貫通孔48bを使用することによって純化処理の対象である石英ガラス加工品Gの内側及び外側のいずれに対しても純化処理ガスを誘導することが可能となり、純化処理を効果的に実施できるものである。図10は本発明の純化処理装置によって一つの石英ガラス加工品の純化処理を行う場合の純化処理ガスの流れの状態の一例を示す説明図である。図11は本発明の純化処理装置によって別の石英ガラス加工品の純化処理を行う場合の純化処理ガスの流れの状態の一例を示す説明図である。図12は本発明の純化処理装置によってさらに別の石英ガラス加工品の純化処理を行う場合の純化処理ガスの流れの状態の一例を示す説明図である。図10〜図12に示した純化処理ガスの流れに示されるように、石英ガラス加工品の形状が種々に変化した場合であっても、本発明によれば有効な純化処理が行われるものである。図12に示した枝管を有する石英ガラス加工品Gの純化処理の場合でも内側通気貫通孔48aからの純化処理ガスの導入によって、通常水洗いも困難である枝管への純化処理ガスのガス通しが可能となるという利点がある。   As described above, in the present invention, by using the inner ventilation through hole 48a and the outer ventilation through hole 48b, the purification gas is supplied to both the inside and the outside of the quartz glass processed product G that is the object of the purification treatment. It is possible to guide, and the purification process can be effectively performed. FIG. 10 is an explanatory diagram showing an example of the state of the flow of the purification process gas when the purification process of one quartz glass product is performed by the purification apparatus of the present invention. FIG. 11 is an explanatory view showing an example of the state of the flow of the purification gas when another purification process for quartz glass is performed by the purification apparatus of the present invention. FIG. 12 is an explanatory view showing an example of the state of the flow of the purification process gas when the purification process of another quartz glass processed product is performed by the purification apparatus of the present invention. As shown in the flow of the purification gas shown in FIGS. 10 to 12, even if the shape of the processed quartz glass product is variously changed, effective purification is performed according to the present invention. is there. Even in the case of the purification treatment of the quartz glass processed product G having the branch pipe shown in FIG. 12, the purification process gas is normally passed through the branch pipe which is difficult to be washed with water by introducing the purification treatment gas from the inner ventilation through hole 48a. There is an advantage that becomes possible.

本発明によれば、材質として天然石英ガラス又は合成石英ガラスのいずれであっても石英ガラス加工品Gに対して純化処理を施すことによって、汚染元素を検出下限値(10ppb以下)までの除去が可能である。除去対象の汚染元素としては、Li,Na,K,Cu,Ni等をあげることができる。   According to the present invention, it is possible to remove contamination elements up to a detection lower limit (10 ppb or less) by performing a purification treatment on the processed quartz glass product G regardless of whether the material is natural quartz glass or synthetic quartz glass. Is possible. Examples of contaminating elements to be removed include Li, Na, K, Cu, and Ni.

以下に本発明の実施例を挙げてさらに具体的に説明するが、この実施例は例示的に示されるもので、限定的に解釈されるべきでないことはいうまでもない。 The present invention will be described more specifically with reference to the following examples. However, it is needless to say that the examples are shown by way of example and should not be interpreted in a limited manner.

(実施例1)
図1及び図2に示した純化処理装置と同様の構造を有する純化処理装置を用いて、天然石英ガラス加工品及び合成石英ガラス加工品に対してそれぞれ次の手順で純化処理を行った。
まず、使用する純化処理装置の純化処理容器についてはその内部雰囲気を純化処理前日より窒素で置換しておいた。純化処理の手順は図8に示したパターンに従って行った。最初に、純化処理容器内の温度を室温から約2時間かけて1100℃まで昇温した。純化処理ガスとして塩化水素ガスを用い、そのガス流量を10L/分程度に設定した。次いで、純化処理ガスを流入させている状態(10L/分程度)において1100℃で2時間30分維持した。その後、同様に純化処理ガスを流入させている状態(10L/分程度)で加熱を止めて(ヒーターをオフとして)自然冷却した。2時間程度で1100℃から800℃に降温した。続いて、塩化水素ガスの代わりに窒素ガスを流し(7L/分程度)純化処理容器内の窒素置換を行いつつ、引き続き自然冷却を行って、16時間程度で200℃まで降温した。そして、純化処理容器内を開放し純化処理済みの石英ガラス加工品の温度が取り扱える温度に下がるまで20分〜30分待ってクリーン手袋を使って当該石英ガラス加工品を取り出した。このように純化処理を行った天然石英ガラス加工品及び合成石英ガラス加工品の表層20μm〜30μmについて汚染元素(Li,Na,K,Cu,Ni)の濃度を測定した。その結果、純化処理した天然石英ガラス加工品及び合成石英ガラス加工品について、Li,Na,K,Cu,Niのいずれの元素も検出されず、検出限界(10ppb)以下であることが判明した。
Example 1
Using a purification apparatus having the same structure as the purification apparatus shown in FIG. 1 and FIG. 2, the purification process was performed on the natural quartz glass processed product and the synthetic quartz glass processed product according to the following procedure.
First, the internal atmosphere of the purification container of the purification apparatus to be used was replaced with nitrogen from the day before the purification process. The procedure of the purification treatment was performed according to the pattern shown in FIG. First, the temperature in the purification container was raised from room temperature to 1100 ° C. over about 2 hours. Hydrogen chloride gas was used as the purification treatment gas, and the gas flow rate was set to about 10 L / min. Subsequently, it was maintained at 1100 ° C. for 2 hours and 30 minutes in a state where a purification gas was introduced (about 10 L / min). Thereafter, the heating was stopped (with the heater turned off) in a state where the purification gas was similarly introduced (about 10 L / min), and natural cooling was performed. The temperature was lowered from 1100 ° C. to 800 ° C. in about 2 hours. Subsequently, nitrogen gas was flowed in place of hydrogen chloride gas (about 7 L / min), and nitrogen was replaced in the purification vessel, followed by natural cooling, and the temperature was lowered to 200 ° C. in about 16 hours. Then, the inside of the purification container was opened, and the quartz glass processed product was taken out using clean gloves after waiting for 20 to 30 minutes until the temperature of the purified quartz glass processed product fell to a manageable temperature. Concentrations of contamination elements (Li, Na, K, Cu, Ni) were measured on the surface layers 20 μm to 30 μm of the natural quartz glass processed product and the synthetic quartz glass processed product thus purified. As a result, it was found that any element of Li, Na, K, Cu, and Ni was not detected in the purified natural quartz glass processed product and synthetic quartz glass processed product, and was below the detection limit (10 ppb).

G:石英ガラス加工品、10:純化処理装置、11:ベース枠体、12:筐体、14:天壁、16:側壁、18:底壁、20:中空内部、22:貫通孔、24:底壁開口部、26:石英ガラス製純化処理容器、26a:上段部円筒体、26b:下段部円筒体、26c:壁体、28:排気口、30:底部開口部、32:ヒーター、34:保持手段、35:セット台座、35a:上部台座部材、35b:下部台座部材、36:天板、36a:天板貫通孔、38:底板、38a:底板基板、40:支柱、40a:内側支柱、40b:外側支柱、41:受け柱、42:不透明板、42a:上部不透明板、42b:下部不透明板、44:側柱、46:可動支持板、48:ガス導入部、48a:内側通気貫通孔、48b:外側通気貫通孔、49:ガス導入通路、50:ガス排気部、51:ガス排気通路、52:周縁部材、54:底板環状溝部、56:第1Oリング、58:外側面部材、60:下面部材、62:受け段部、64:段部補助部材、66:第1段部、68:第2段部、70:第2Oリング、74:下面部材環状溝部、76:第3Oリング、78:溝部、80:冷却機構、82:貫通孔、84:流量計、86:導入弁、88:導入ガス圧力計、90:排気圧力計、92:排気弁、94:圧力調節指示計。 G: quartz glass processed product, 10: purification apparatus, 11: base frame, 12: housing, 14: top wall, 16: side wall, 18: bottom wall, 20: hollow interior, 22: through hole, 24: Bottom wall opening, 26: quartz glass purification treatment vessel, 26a: upper stage cylindrical body, 26b: lower stage cylindrical body, 26c: wall body, 28: exhaust port, 30: bottom opening, 32: heater, 34: Holding means, 35: set base, 35a: upper base member, 35b: lower base member, 36: top plate, 36a: top plate through hole, 38: bottom plate, 38a: bottom plate substrate, 40: support, 40a: inner support, 40b: outer support column, 41: receiving column, 42: opaque plate, 42a: upper opaque plate, 42b: lower opaque plate, 44: side column, 46: movable support plate, 48: gas introduction part, 48a: inner ventilation through hole 48b: outer ventilation through hole, 49: gas introduction 50: gas exhaust part, 51: gas exhaust passage, 52: peripheral member, 54: bottom plate annular groove part, 56: first O-ring, 58: outer surface member, 60: lower surface member, 62: receiving step part, 64: Step assisting member, 66: first step, 68: second step, 70: second O-ring, 74: lower surface member annular groove, 76: third O-ring, 78: groove, 80: cooling mechanism, 82: penetration Hole: 84: Flow meter, 86: Introduction valve, 88: Introduction gas pressure gauge, 90: Exhaust pressure gauge, 92: Exhaust valve, 94: Pressure adjustment indicator.

Claims (11)

天壁に貫通孔を開穿しかつ底壁に底壁開口部を開口した筐体と、
前記筐体の底壁開口部に下端部分が密封状態で挿着されるとともに下端部が該筐体の底壁から下方に垂下した状態で該筐体内部に設けられた円筒状の石英ガラス製純化処理容器と、
前記純化処理容器の外方に設けられかつ前記純化処理容器内部を加熱してヒートゾーンを形成する作用を行うヒーターと、
純化処理の対象となる石英ガラス加工品を前記純化処理容器に対して格納及び取り出しするために前記純化処理容器の底部を開口して設けられた石英ガラス加工品格納及び取り出し用の底部開口部と、
前記底部開口部を密封状態で閉塞する閉塞手段と、
純化処理前には石英ガラス加工品を前記純化処理容器内に下方から格納することができ、純化処理時には石英ガラス加工品が前記純化処理容器と直接接触しないように該石英ガラス加工品を前記純化処理容器のヒートゾーン内に保持することができ、純化処理終了後には純化処理後の石英ガラス加工品を下方に搬出することができるようにした上下動可能な保持手段と、
前記純化処理容器の下端部に設けられかつ前記純化処理容器内にガスを導入するためのガス導入部と、
前記純化処理容器の上部に開穿された排気口と前記筐体の天壁に開穿された貫通孔とを連通して形成されかつ純化処理容器内のガスを前記筐体の外部に排気するためのガス排気通路と、を含み、
前記保持手段に保持された石英ガラス加工品を前記純化処理容器内で純化処理することができるようにしたことを特徴とする石英ガラス加工品の純化処理装置。
A housing having a through hole in the top wall and a bottom wall opening in the bottom wall;
Made of cylindrical quartz glass provided inside the casing with the lower end portion inserted in a sealed state into the bottom wall opening of the casing and the lower end hanging downward from the bottom wall of the casing A purification vessel;
A heater that is provided outside the purification container and that heats the interior of the purification container to form a heat zone;
A bottom opening for storing and taking out a quartz glass processed product provided by opening the bottom of the purification processing container in order to store and take out the quartz glass processed product to be purified from the purification processing container. ,
A closing means for closing the bottom opening in a sealed state;
Before the purification treatment, the quartz glass processed product can be stored in the purification processing container from below, and the quartz glass processed product is not purified directly in contact with the purification processing container during the purification treatment. A holding means that can be held in the heat zone of the processing vessel and can move up and down after the purification process is completed, so that the quartz glass processed product after the purification process can be carried out downward,
A gas introduction part provided at a lower end of the purification treatment container and for introducing gas into the purification treatment container;
The exhaust port opened in the upper part of the purification container and the through-hole opened in the top wall of the casing are formed to communicate with each other, and the gas in the purification container is exhausted to the outside of the casing. A gas exhaust passage for,
A quartz glass processed product purification apparatus, wherein the quartz glass processed product held by the holding means can be purified in the purification container.
前記筐体の底壁開口部に前記純化処理容器の下端部分を挿着した時に、該底壁開口部と該純化処理容器の挿着を密封状態とするため、該底壁開口部の当接面に弾性を有するOリングを設置しかつ該Oリングの設置部分を冷却する冷却機構を設けたことを特徴とする請求項1記載の純化処理装置。 When the lower end portion of the purification treatment container is inserted into the bottom wall opening of the housing, the bottom wall opening and the purification treatment container are brought into a sealed state so that the bottom wall opening is brought into contact with the bottom wall opening. 2. The purification apparatus according to claim 1, further comprising a cooling mechanism for installing an O-ring having elasticity on a surface and cooling a portion where the O-ring is installed. 前記円筒状の純化処理容器が、上段部円筒体と下段部円筒体とを連設してなる2段構造を有し、前記下段部円筒体の内径が前記上段部円筒体の内径を超える大きさであることを特徴とする請求項1又は2記載の純化処理装置。 The cylindrical purification vessel has a two-stage structure in which an upper stage cylindrical body and a lower stage cylindrical body are connected in series, and the inner diameter of the lower stage cylindrical body exceeds the inner diameter of the upper stage cylindrical body. The purification apparatus according to claim 1 or 2, wherein 前記ガスを導入するガス導入部を前記純化処理容器の下部中央部を含む範囲に1以上配置したことを特徴とする請求項1〜3のいずれか1項記載の純化処理装置。 The purification apparatus according to any one of claims 1 to 3, wherein one or more gas introduction parts for introducing the gas are arranged in a range including a lower central part of the purification process container. 前記石英ガラス加工品を保持する保持手段が、上面に石英ガラス加工品が載置される天板と、該天板の下方に所定間隔を介して設置された底板と、該天板及び底板間に所定間隔をおいて取り付けられた複数の支柱と、該支柱を介して該天板及び底板間に所定間隔をおいて重層された複数の不透明板からなる遮熱手段と、を有することを特徴とする請求項1〜4のいずれか1項記載の純化処理装置。 The holding means for holding the quartz glass processed product includes a top plate on which the quartz glass processed product is placed, a bottom plate installed below the top plate with a predetermined interval, and between the top plate and the bottom plate. A plurality of support posts attached at predetermined intervals, and heat shielding means comprising a plurality of opaque plates stacked at predetermined intervals between the top plate and the bottom plate via the support posts. The purification apparatus according to any one of claims 1 to 4. 前記保持手段の天板の上面に石英ガラス加工品を載置させた状態で上昇させて該石英ガラス加工品を前記純化処理容器内に格納した状態で、前記保持手段の底板の外周辺部が前記純化処理容器の底部開口部の周縁部に密封状態で当接することによって該底部開口部を密封状態で閉塞する閉塞手段として作用するようにしたことを特徴とする請求項5記載の純化処理装置。   The outer peripheral portion of the bottom plate of the holding means is in a state where the quartz glass processed product is raised while being placed on the top surface of the top plate of the holding means and the quartz glass processed product is stored in the purification treatment container. 6. The purifying apparatus according to claim 5, wherein the purifying apparatus acts as a closing means for closing the bottom opening in a sealed state by contacting the peripheral edge of the bottom opening of the purifying container in a sealed state. . 請求項1〜6のいずれか1項記載の純化処理装置を用いる石英ガラス加工品の純化処理方法であって、
純化処理の対象となる石英ガラス加工品を前記純化処理容器の底部開口部より前記純化処理容器内に格納する工程と
前記純化処理容器の底部開口部を閉塞する工程と
前記純化処理容器内を不活性ガスで置換する工程と、
純化処理ガスを前記純化処理容器内に流入させつつ前記純化処理容器内の温度を室温から所定の純化処理温度まで昇温する昇温工程と、
前記純化処理ガスを継続して前記純化処理容器内に流入させつつ所定の純化処理温度で所定の時間をかけて純化処理を行う純化処理工程と、
純化処理終了後、前記純化処理ガスを前記純化処理容器内に流入させつつガス切り替え温度まで降温する工程と、
前記純化処理容器内の温度がガス切り替え温度に達した時、前記純化処理ガスを不活性ガスに切り替える工程と、
前記不活性ガスを前記純化処理容器内に流入させつつ前記石英ガラス加工品の取り出し可能温度まで降温する工程と、
前記純化処理容器内の温度が取り出し可能温度に達した時、前記石英ガラス加工品を前記純化処理容器の底部開口部より取り出す工程と、
を有することを特徴とする石英ガラス加工品の純化処理方法。
A method for purifying a quartz glass workpiece using the purification apparatus according to any one of claims 1 to 6,
A process for storing a processed quartz glass product to be purified in the purification container from the bottom opening of the purification container, a process for closing the bottom opening in the purification container, and the inside of the purification container are not performed. Replacing with active gas;
A temperature raising step of raising the temperature in the purification treatment vessel from room temperature to a predetermined purification treatment temperature while flowing a purification treatment gas into the purification treatment vessel;
A purification process step of performing a purification process over a predetermined time at a predetermined purification temperature while continuously flowing the purification gas into the purification container;
A step of lowering the gas to a gas switching temperature while flowing the purification gas into the purification container after the purification process is completed;
A step of switching the purification gas to an inert gas when the temperature in the purification vessel reaches a gas switching temperature;
Cooling the inert gas into the purification container while lowering the quartz glass processed product to a temperature at which it can be removed;
When the temperature in the purification container reaches a temperature that can be taken out, the step of taking out the processed quartz glass product from the bottom opening of the purification container;
A method for purifying a processed quartz glass product, comprising:
前記純化処理ガスがHCl又はClを含むガスであることを特徴とする請求項7記載の純化処理方法。   The purification method according to claim 7, wherein the purification treatment gas is a gas containing HCl or Cl. 前記純化処理温度が、900℃以上1300℃以下であり、純化処理時間が30分以上であることを特徴とする請求項7又は8記載の石英ガラス加工品の純化処理方法。 9. The method for purifying a quartz glass processed product according to claim 7, wherein the purification treatment temperature is 900 ° C. or more and 1300 ° C. or less, and the purification treatment time is 30 minutes or more. 前記純化処理後のガス切り替え温度が800℃以上850℃以下であることを特徴とする請求項7〜9のいずれか1項記載の石英ガラス加工品の純化処理方法。 The method for purifying a quartz glass processed product according to any one of claims 7 to 9, wherein a gas switching temperature after the purification treatment is 800 ° C or higher and 850 ° C or lower. 前記純化処理ガスの前記純化処理容器内への純化ガス流入作業を、前記純化処理ガスの前記ガス導入部からの純化処理ガスの導入とともに純化処理に用いられた使用済みの純化処理ガスの前記ガス排気通路からの排気によって行い、この純化処理ガス流入作業に際して純化処理容器内の圧力が大気圧より高くかつ1kPaより小さくなるように制御することを特徴とする請求項7〜10のいずれか1項記載の石英ガラス加工品の純化処理方法。 The purifying gas inflow operation into the purifying container of the purifying gas is used for the purifying gas used in the purifying process together with the introduction of the purifying gas from the gas introduction part of the purifying gas. The exhaust gas from the exhaust passage is used, and the pressure in the purification container is controlled to be higher than atmospheric pressure and lower than 1 kPa during the purification process gas inflow operation. The purification method of the quartz glass processed goods of description.
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