JP3256037B2 - Heat treatment equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus capable of performing a normal pressure high temperature treatment and a reduced pressure treatment.

[0002]

2. Description of the Related Art In general, in a semiconductor product manufacturing process, an object to be processed, such as a semiconductor wafer, is subjected to a predetermined heat treatment in a soaked state to form a thin film on the surface or perform thermal diffusion or the like. Is performed, and a heat treatment apparatus is used for this purpose.

In this heat treatment apparatus, a wafer is processed at a normal pressure, for example, a pressure of about atmospheric pressure, for about 10 hours during wafer processing.
A heat treatment apparatus for normal pressure and high temperature, which performs heat treatment at a high process temperature of about 00 ° C., and a heat treatment apparatus for decompression, for example, which performs heat treatment at a process temperature of about 800 ° C. under reduced pressure of about several Torr, are known. I have. A heat treatment apparatus is selected according to the type of heat treatment to be performed on the semiconductor wafer. The wafer is processed using a heat treatment apparatus for normal pressure and high temperature, and then the wafer is further subjected to a desired heat treatment using a heat treatment apparatus for decompression. Or the reverse operation is being performed.

[0004] For example, taking a heat treatment apparatus for pressure reduction as an example, FIG. 6 is a sectional view of a conventional heat treatment apparatus for pressure reduction, and a heating furnace 2 has an inner tube 4 made of quartz standing at an open lower end. And a processing vessel 8 composed of a quartz outer tube 6 concentrically disposed on the outer periphery of the processing vessel 8, and a heater 10 is wound around the outer periphery of the outer tube 6. A wafer boat 12 made of, for example, quartz is housed in the processing container 8 from below, so that it can be inserted into and removed from the boat. For example, a semiconductor wafer W is accommodated.

[0005] To the lower portion of the processing container 8 is connected a cylindrical manifold portion 14 made of stainless steel. Specifically, the lower flange portion 16A of the outer pipe 6 is
The lower end of the inner pipe 4 is detachably mounted on a ring-shaped step portion 14B provided in a middle stage of the manifold portion 14. . The manifold section 14 is provided with a gas introduction port 18 for introducing a processing gas into the container 8 and a gas exhaust port 20 for exhausting the gas in the container.

A stainless steel cap 26 attached to an arm 24 of an elevating means 22 such as an elevator is hermetically attached to the lower end opening of the manifold 14 via an O-ring 28 so as to be openable and closable. Part 2
The wafer boat 12 is connected to a heat insulating tube 30 made of quartz.
Is placed. In this case, the cap portion 26 is provided with the bearing 30.
The heat-retaining cylinder 30 is supported on the upper end of the rotating shaft, and is rotated. O-rings 16 and 2 used as seal members
In the vicinity of 8, a cooling mechanism (not shown) is provided in order to prevent the O-ring itself from melting because the temperature of the processing container is as high as 800 ° C.

When heat treatment is performed by such a depressurizing heat treatment apparatus, the gas introduction port is maintained while maintaining the inside at a process temperature of about 800 ° C. and the inside of the processing vessel 8 at a vacuum reduced pressure of about 1 Torr, for example. From 18, a processing gas is introduced. The introduced processing gas rises while being in contact with the wafer region, flows down between the inner tube 4 and the outer tube 6, and is discharged from the gas exhaust port 20.

[0008]

By the way, a specific heat treatment is applied to the wafer by this kind of heat treatment apparatus for pressure reduction.
For example, after performing a thin film deposition process, when performing a thermal diffusion process or the like, transfer the processed wafer to another heat treatment apparatus for normal pressure and high temperature, and further perform a desired heat treatment on the wafer. It has become. For this reason, the time required for wafer transfer is required, which not only reduces the throughput, but also removes the wafer out of the furnace during transfer and exposes the wafer to the clean room atmosphere. However, there is a problem that it adheres and is contaminated. Furthermore, in order to perform the necessary heat treatment on the wafer, two heat treatment apparatuses are always required, and the equipment cost has been inevitably increased.

Therefore, in order to solve these problems, it is conceivable to perform both processes in either the heat treatment apparatus for decompression or the heat treatment apparatus for normal pressure and high temperature. However, when normal pressure and high temperature treatment is performed using a heat treatment apparatus for decompression, in this case, the process temperature rises from about 800 ° C. at decompression to about 1000 ° C. at normal pressure, and the corrosiveness of HCl or the like is increased. Since a large amount of gas is used, the stainless steel of the manifold section 14 is corroded, which is not preferable.

[0010] Further, in the case of performing decompression treatment using a heat treatment apparatus for normal pressure and high temperature, since this apparatus is premised on processing at normal pressure of about atmospheric pressure, for example, an exhaust seal is used as a seal structure. However, there is a problem that the seal structure is easily broken under a reduced pressure vacuum of about 1 Torr. The present invention has been devised in view of the above problems and effectively solving them. An object of the present invention is to provide a heat treatment apparatus capable of performing a normal pressure high temperature heat treatment and a reduced pressure heat treatment with one apparatus.

[0011]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, an object of the present invention is to provide an inner pipe for accommodating an object placed on an object accommodation boat and an inner pipe having a lower part opened. Is opened and a processing container comprising an outer tube arranged concentrically outside the inner tube, a gas introduction port connected to the processing container and introducing a processing gas into the processing container, and In a heat treatment apparatus comprising: a cylindrical manifold having a gas exhaust port for exhausting gas in a processing vessel; and a cap for opening and closing an opening of the manifold, the inner pipe and the outer pipe are provided. And the manifold portion are formed of a heat-resistant and corrosion-resistant material , and the inner tube, the outer tube, and the manifold portion are fused to each other.
The cap is covered with a protective layer made of a heat-resistant and corrosion-resistant material, and a high-temperature heat-resistant sealing means is attached to the joint between the cap and the manifold. Is formed.

[0012]

According to the present invention, the inner tube,
The outer tube and the manifold are integrally formed of a heat and corrosion resistant material, for example, quartz, and a protective layer made of a heat and corrosion resistant material is also formed on the inner surface of the cap. High temperature and heat resistant sealing means is adopted, so that even when a corrosive gas is flowed during normal pressure and high temperature processing, materials such as containers and manifolds are not corroded by this, and even at a high temperature of about 1000 ° C. Also, the sealing means is not destroyed. In addition, during the decompression heat treatment, the inside of the processing container is placed in a vacuum state of about 1 Torr. However, as described above, since the sealing means retains the sealing function without being thermally broken, the decompression heat treatment operation is not performed. It can be done efficiently.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a heat treatment apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a configuration diagram showing an example of a heat treatment apparatus according to the present invention, FIG. 2 is an enlarged sectional view showing a sealing structure of a cap portion of the apparatus shown in FIG. 1, and FIG.
1 is an enlarged sectional view showing a seal structure of a gas exhaust port of the apparatus shown in FIG. 1, and FIG. 4 is an enlarged sectional view showing a seal structure of a gas introduction port of the apparatus shown in FIG. The same parts as those of the conventional device shown in FIG.

As shown in the figure, a heating furnace 33 of this heat treatment apparatus 32 is concentric with an inner tube 4 made of a heat-resistant and corrosion-resistant material, for example, quartz, which has an open lower end, and is spaced apart from the inner tube 4 by a predetermined gap. It has a processing vessel 8 composed of an outer tube 6 also made of quartz and arranged in a shape. For example, a resistance heater 10 is wound around the outer periphery of the processing container 8. The outer tube 6 has a dome-shaped ceiling 6B, and a gas introduction port 18 for introducing a processing gas into the processing container 8 and a gas exhaust for exhausting gas in the processing container 8 are provided below the outer tube 6. A cylindrical manifold portion 34 having the port 20 is connected. Specifically, the entire manifold section 34 is made of the same heat-resistant and corrosion-resistant material as described above, for example, quartz, and the gas introduction port 18 and the gas exhaust port 20 made of quartz are formed to protrude.
The lower end portion is opened, and a lower flange portion 34A for connection is formed in the peripheral portion. The gas exhaust port 20
In the case of a port for evacuation at the time of pressure reduction, the diameter is set to be large, for example, about 3 inches in order to reduce the exhaust resistance. Although two ports 18 and 20 are shown in the illustrated example, a plurality of ports 18 and 20 may be formed as necessary.

The diameter of the manifold portion 34 is set to be the same as the diameter of the outer tube 6, and these are integrally joined by glass melting during production. Then, after the outer tube 6 and the manifold portion 34 are integrally joined, the cylindrical inner tube 4 also made of quartz is accommodated in the outer tube 6 and the lower end portion thereof is expanded in a divergent shape so that the manifold portion is expanded. 34, and is integrally joined to the inner wall by glass melting in the same manner as described above. As a result, the inner tube 4, the outer tube 6, and the manifold portion 34 are integrally joined by a heat-resistant and corrosion-resistant material, that is, quartz.

A thermocouple accommodating tube 35, which is a thin tube for accommodating a thermocouple, is integrally attached to the inner wall of the inner tube 4 along the longitudinal direction. And extends out of the container through the side wall of the container. The accommodation tube 35 accommodates a number of thermocouples 37 corresponding to the number of zones of the heater. An object boat made of, for example, quartz, that is, a wafer boat 12 is accommodated in the processing container 8 so as to be insertable into and removable from below.
A large number of objects to be processed, ie, semiconductor wafers W, are accommodated in the boat at a predetermined pitch along the length thereof.

At the lower end opening of the manifold portion 34, a stainless steel cap portion 26 attached to the arm 24 of the elevating means 22 such as an elevator is attached so as to be openable and closable. The wafer boat 12 is to be placed via 30. In this case, it is necessary to rotate the wafer boat 12 during processing to uniformly expose the wafer W to the processing gas in order to ensure in-plane uniformity of film formation on the wafer W.
For example, a rotating shaft 38 supported by a magnetic seal bearing 36
Is inserted, and the above-mentioned heat-retaining cylinder 30 is supported on the upper end side and is rotated. This rotating shaft 3
At the lower end of 8, a pulley 40 is provided, and a transmission belt is wound around the pulley from a motor (not shown).
A protective layer 42 made of a heat-resistant and corrosion-resistant material, for example, quartz is formed on the upper surface of the stainless steel cap portion 26, that is, the surface on the processing container side, and a corrosive gas, for example, hydrogen chloride (HCl) is used. It can withstand against. A high-temperature heat-resistant sealing means 44 is provided at the joint between the lower flange portion 34A of the manifold portion 34 and the peripheral portion of the cap portion 26 so that the sealing performance does not deteriorate even at a furnace temperature of about 1000 ° C. And enables high-temperature processing.

More specifically, as shown in FIG. 2, the high-temperature and heat-resistant sealing means 44 has a ring-shaped groove 46 formed on the periphery of the cap portion 26, and an O-shape made of fluorine rubber or the like.
It is configured by arranging a ring 48. Since the O-ring 48 has high sealing performance but poor heat resistance, a cooling mechanism 50 for cooling the O-ring 48 is provided. Specifically, as the cooling mechanism, a first cooling water passage 5 formed in a ring shape in the circumferential direction of the cap portion 26 is provided below the O-ring 48.
2 and a ring-shaped second cooling water passage 56 is also formed in the holding member 54 for holding the lower flange portion 34A of the manifold portion 34, and the cooling water is supplied to these water passages 52 and 56 during processing. The O-ring 48 is efficiently cooled by flowing.

On the other hand, a gas supply system 60 is connected to the gas introduction port 18 via a ball joint 58 as shown in FIG. 4 so that a processing gas or the like can be supplied. The gas supply system 60 is provided with a supply gas on-off valve 62 on the way, and is connected to a processing gas source (not shown). As a pipe of the gas supply system 60, for example, a flexible tube made of Teflon is used, but since this tube contracts during evacuation at the time of decompression treatment, the above-described ball joint 58 is used at the connection portion. The joint 58 is mainly composed of a spherical joint body 62 having a flow path therein and a funnel-shaped receiving portion 64 for receiving the spherical joint body 62. A Teflon-coated O-ring 66, for example, is interposed between these. It is interposed and greatly improves heat resistance and seal resistance. Clamp plates 68 and 70 are fixed to the joint body 62 and the receiving portion 64, respectively. The clamp plates 68 and 70 are fixed by tightening bolts 74 with a spring 72 interposed therebetween. Is airtightly connected at a certain free angle.

On the other hand, an exhaust system 76 is connected to the gas exhaust port 20 via a high-temperature heat-resistant seal member. Specifically, a flexible tube 80 made of, for example, Hastelloy is connected to the gas exhaust port 20 via a metal gasket 78A as a sealing member.
Is a quartz pipe 8 through a similar metal gasket 78B.
2 and the quartz pipe 82 is connected to a Teflon pipe 84. These metal gaskets 78
A cross section of A, 78B is shown enlarged in FIG.
For example, it is formed by forming a metal of S-shaped cross section made of Hastelloy into a ring shape, and the sealing surfaces 86 at both ends are brought into pressure contact between the gas exhaust port 18 and the tube 80 and between the tube 80 and the quartz pipe 82. To ensure high sealing performance with low tightening force and at the same time
It is configured to withstand a high temperature of about 00 ° C.
If an O-ring made of fluoro rubber having a high sealing property is used instead of the metal gaskets 78A and 78B, a high temperature (400 ° C.)
Degree) can not withstand.

The Teflon pipe 84 is branched into two parts by an evacuation system 84A used for heat treatment under reduced pressure and a normal pressure exhaust system 84B used for heat treatment at normal pressure and high temperature. The vacuum exhaust system 84A includes a vacuum-side on-off valve 8
8. A vacuum pump 90 for gas replacement and an abatement apparatus 92 are sequentially provided. Further, the normal pressure exhaust system 84B includes a normal pressure side on-off valve 94, an exhaust pressure controller 96, a scrubber 9
7 are sequentially provided.

Next, the operation of the present embodiment configured as described above will be described. First, a case where the semiconductor wafer W is subjected to the normal pressure and high temperature processing will be described. For example, when the processing temperature is about 1000 ° C., the processing vessel 8 is heated to a lower temperature, for example, about 600 ° C. by the heater 10, and the wafer W placed on the wafer boat 12 is loaded into the processing vessel. I do. That is, the wafer boat 12 on which a large number of wafers W are loaded is raised into the processing container 8 by driving the lifting / lowering means 22, and is loaded thereon, and the lower end opening of the manifold portion 34 is closed by the cap portion 26. At this time, since the sealing portion is sealed by the high-temperature heat-resistant sealing means 44 having the O-ring 48, the hermeticity is well sealed.

Then, an inert gas, for example, a nitrogen gas, is supplied from the gas introduction port 8 to replace the atmosphere taken into the container at the time of the loading, and is replaced with the inert gas. After the gas replacement operation is completed, the power of the heater 10 is increased to 600
The temperature of the processing container 8 is raised to a process temperature, for example, 1000 ° C., and a processing gas is supplied through a gas supply system 60 to perform normal normal pressure high temperature processing. At this time, in the evacuation system 76, the evacuation system 84A is closed by closing the evacuation system 84A of the evacuation system 84A, the evacuation system 84A is opened, and the evacuation pressure controller 96 is opened by driving the evacuation system controller 96. The interior is maintained at normal pressure, that is, atmospheric pressure. For example, the processing gas introduced into the processing container 8 from the gas introduction port 8 comes into contact with the wafer while ascending the wafer region, and the processing gas that has risen to the container ceiling flows down the gap between the inner tube 4 and the outer tube 6. Then, the gas is exhausted from the gas exhaust port 20.

During this processing, the temperature of the cap 26 and the gas exhaust port 20 and the like becomes considerably high. However, the O-ring 48 of the cap 26 is provided with the second cooling water channel 56 and the first cooling water channel 52 provided on the upper and lower sides. It is cooled by flowing cooling water through it. Therefore, the sealing function can be maintained without the O-ring 48 being melted or damaged by high heat, and the seal is not broken during the subsequent decompression heat treatment.

Similarly, metal gaskets 78A, 78 interposed between the gas exhaust port 20 and the exhaust system 76.
B is also exposed to a high temperature. However, due to the characteristics of the gasket, the sealing property does not deteriorate even at a high temperature, so that the seal is not broken during the subsequent decompression heat treatment as described above. In this manner, normal pressure and high temperature processing of the wafer is performed. Further, the inner tube 4, the outer tube 6, and the manifold portion 34 are integrally connected by quartz, and a quartz protective layer 42 is formed on the surface of the stainless steel cap portion 26. In addition, it is possible to stably perform the normal-pressure high-temperature treatment without corrosive gas such as HCl gas during the treatment.

Next, the case where the wafer is subjected to a reduced pressure heat treatment will be described. For example, when performing a heat treatment at a processing temperature of about 800 ° C. in a vacuum depressurized atmosphere of 10 to 0.1 Torr, for example, the container is heated to about 600 ° C. in advance as in the case of the high-pressure processing at normal pressure. The wafer W placed on the wafer boat 12 is loaded into the container 8, and the opening at the lower end of the manifold section 34 is closed by the cap section 26.

Next, the normal pressure side opening / closing valve 94 is closed to shut off the normal pressure exhaust system 84B, and the vacuum side opening / closing valve 88 is opened to drive the vacuum pump 90 to evacuate the processing chamber 8 through the vacuum exhaust system 84A. Vacuum is applied, and a processing gas is introduced into the container 8 from the gas introduction port 18 while maintaining the atmosphere therein at a predetermined reduced pressure, for example, about 1 Torr, and the wafer is subjected to reduced pressure heat treatment. In this case, the O-ring 48 of the cap 26 is connected to the first and second cooling
6, the seal is reliably maintained, and the seal is not broken.

Further, metal gaskets 78A and 78B provided between the gas exhaust port 20 and the exhaust system 76 also include:
Although it is exposed to a high temperature although it is at a lower temperature than that at the time of normal pressure and high temperature processing, this gasket can maintain a sufficiently high sealing property and can maintain the inside of the container in a reduced pressure atmosphere. Further, the gas supply system 60 is depressurized by the evacuation of the container 8, but a ball joint 58 as shown in FIG. High sealing properties can be ensured even at the parts. Therefore, it is possible to stably perform the reduced pressure heat treatment on the wafer as a whole.

Further, conventionally, an O-ring is interposed at the joint between the stainless steel manifold portion and the outer tube and a cooling mechanism for cooling the O-ring is provided. In this embodiment, since the outer tube 6 and the manifold portion 34 are both made of quartz and are integrally connected, there is no need to cool this portion. Deposits that cause particles are not generated, which can contribute to improvement in yield.

As described above, in the present embodiment, both normal pressure high temperature heat treatment and reduced pressure heat treatment can be performed by the same heat treatment apparatus. Therefore, when the above two processes are successively performed on a wafer, It is not necessary to transfer the wafer to another heat treatment apparatus as in the conventional apparatus, and the time required for the transfer can be omitted, so that the throughput can be greatly improved. In this case, if the so-called high-speed heat treatment method in which the power of the heater 10 is increased and the heat capacity of the processing vessel 8 and the like is reduced to thereby greatly increase the temperature raising rate to, for example, 100 ° C./min, is adopted, the throughput can be further increased. Can be improved.

Further, since the transfer of the wafer is not required as described above, the wafer is not exposed to the air in the clean room, and it is possible to prevent the wafer from being contaminated by particles and the like in the air. Furthermore, when performing the two heat treatments described above, two types of heat treatment apparatuses were conventionally required, but according to the present embodiment, two types of heat treatment can be performed by one apparatus. In addition, it is possible to significantly reduce equipment costs. Also,
When housing the thermocouple 37 in the thermocouple housing tube 35,
The thermocouple 37 may be inserted through the lower end opening, and can be easily attached and detached.

In the above embodiment, the cap 26
Although the O-ring 48 and the cooling water passages 52 and 56 for cooling the O-ring 48 are used as the high-temperature heat-resistant sealing means 44, the present invention is not limited to this. For example, a thin plate sealing member 98 made of a metal sheet as shown in FIG. It may be.
That is, in this case, the lower surface of the lower flange portion 34A of the manifold portion 34 has, for example, a width of 4 mm and a depth of 5 mm.
An annular groove 100 having a circular shape is formed, and the cap portion 2 is formed.
Similarly, an annular groove 10 having a width of about 4 mm and a depth of about 5 mm is provided at a position facing the annular groove 100 on the upper surface of the peripheral portion of the annular groove 6.
2 are formed.

The annular grooves 100 and 102 are provided with exhaust pipes 104A and 104B, respectively, and these exhaust pipes 104A and 104B
A and the vacuum pump 108 in common via 106B.
, And constitutes an exhaust mechanism 110 so that the annular grooves 100 and 102 can be exhausted under reduced pressure. Further, an open pipe 112 for opening the atmosphere is branched from between the vacuum pump 108 and the connecting tools 106A and 106B. The open pipe 112 is, for example, an N ₂ gas (not shown) through a valve 114 formed of an electromagnetic on-off valve. Connected to source. The annular groove 10 is provided between the lower flange 34A of the manifold and the periphery of the cap 26.
Two insertable and removable annular thin plate seal members 98 that can respectively cover the openings 0 and 102 are interposed.
Each inner peripheral end is bent in a ring shape, and the entire periphery is welded at a welded portion 98A. These two seal members 98, 98 are made of, for example, 0.15 mm thick stainless steel coated with tantalum amorphous, and the contact surface with the lower flange portion 34A and the contact surface with the cap portion 26 are mirror surfaces. Finished and good sealing. Further, a cushion material 114 made of, for example, a ring-shaped graphite sheet is interposed between the two seal members 98, 98.

According to such high-temperature heat-resistant sealing means,
Since the atmosphere in both annular grooves 100 and 102 is evacuated by evacuating the vacuum pump 108, the thin plate seal members 98 and 98 facing these openings are respectively sucked and drawn to the suction side as shown by phantom lines. It bends in a protruding manner to close and seal the openings of the annular grooves 98, 98. In this case, since the contact surfaces of the thin plate sealing members 98 and 98 are mirror-finished, this portion can be reliably sealed, and the sealing performance does not deteriorate even at high temperatures. In this case, if the contact surfaces of the lower flange portion 34A and the cap portion 26 are also mirror-finished in advance, the sealing performance can be further improved. Further, when a metal sheet sealing member is used as the sealing member, there is no more degassing, and the possibility of contamination can be further suppressed.

In the above embodiment, the processing gas is formed so as to rise in the inner pipe 4 and flow down between the inner pipe 4 and the outer pipe 6. Inner pipe 4 for processing gas
Alternatively, the space between the inner tube 4 and the outer tube 6 may be raised to flow down the inner tube 4. In this case, it is preferable to provide the gas introduction port 18 and the gas exhaust port 20 at corresponding positions, and to provide various ports so that the gas flow direction can be arbitrarily selected. . Further, the processing vessel 8 has a double pipe structure having the inner pipe 4 and the outer pipe 6, but is not limited to this, and may of course have a single pipe structure.

[0036]

As described above, according to the heat treatment apparatus of the present invention, the following excellent functions and effects can be exhibited. Since both heat-resistant sealability and corrosion resistance are provided, one apparatus can perform both normal-pressure and high-temperature heat treatment and reduced-pressure heat treatment. When these heat treatments are continuously performed on the object, the object is transferred. There is no need to perform loading, and the throughput can be improved accordingly. Further, since the transfer can be eliminated, it is possible to prevent the object to be processed from being contaminated by particles or the like contained in the air. Even in the case of performing the above two types of heat treatment, only one heat treatment apparatus is required, and the equipment cost can be significantly reduced.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing an example of a heat treatment apparatus according to the present invention.

FIG. 2 is an enlarged sectional view showing a sealing structure of a cap portion of the device shown in FIG.

FIG. 3 is an enlarged sectional view showing a seal structure of a gas exhaust port of the device shown in FIG.

FIG. 4 is an enlarged sectional view showing a seal structure of a gas introduction port of the apparatus shown in FIG.

FIG. 5 is an enlarged sectional view showing a modification of the sealing structure of the cap section of the device shown in FIG.

FIG. 6 is a configuration diagram illustrating an example of a conventional heat treatment apparatus.

[Explanation of symbols]

 4 Inner tube 6 Outer tube 8 Processing vessel 12 Wafer boat 18 Gas introduction port 20 Gas exhaust port 26 Cap part 32 Heat treatment device 34 Manifold part 42 Protective layer 44 High temperature heat resistant sealing means 48 O-ring 50 Cooling mechanism 52 First cooling water channel 56 Second cooling water passage 84A Vacuum exhaust system 84B Normal pressure exhaust system W Semiconductor wafer (workpiece)

Continuation of the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/22 511 H01L 21/31

Claims (5)

(57) [Claims] An inner tube for accommodating an object mounted on an object accommodation boat and a lower portion are opened and a concentrically disposed outside the inner tube. A processing container formed of an outer tube, a cylindrical shape having a gas introduction port connected to the processing container and introducing a processing gas into the processing container, and a gas exhaust port for exhausting gas in the processing container; In a heat treatment apparatus provided with a manifold portion and a cap portion for opening and closing the opening of the manifold portion, the inner tube, the outer tube, and the manifold portion are formed of a heat-resistant and corrosion-resistant material.
The inner tube, the outer tube and the manifold part are melted with each other.
These are integrally formed by joining, and the surface of the cap portion on the processing container side is covered with a protective layer made of a heat-resistant and corrosion-resistant material, and a high-temperature heat-resistant sealing means is provided at a joint portion between the cap portion and the manifold portion. A heat treatment apparatus characterized in that it is formed to form. 2. The high-temperature heat-resistant sealing means includes an O-ring interposed between the manifold and the cap, and a cooling mechanism for cooling the O-ring. The heat treatment apparatus according to the above. 3. The high-temperature and heat-resistant sealing means includes an annular groove provided in each of the manifold and the cap, an exhaust mechanism connected to each of the annular grooves, and the manifold and the cap. 2. The heat treatment apparatus according to claim 1, comprising an annular thin plate sealing member interposed therebetween. 4. A thermocouple is housed in an inner wall of the inner tube.
The thermocouple accommodating tube is attached integrally.
The heat treatment apparatus according to claim 1. 5. The heat and corrosion resistant material is quartz.
The heat treatment according to any one of claims 1 to 4, wherein
apparatus.