JPH01158725A - Heat treatment apparatus - Google Patents
Heat treatment apparatusInfo
- Publication number
- JPH01158725A JPH01158725A JP31806087A JP31806087A JPH01158725A JP H01158725 A JPH01158725 A JP H01158725A JP 31806087 A JP31806087 A JP 31806087A JP 31806087 A JP31806087 A JP 31806087A JP H01158725 A JPH01158725 A JP H01158725A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- reaction tube
- tube
- coupling
- protrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 69
- 230000008878 coupling Effects 0.000 abstract description 11
- 238000010168 coupling process Methods 0.000 abstract description 11
- 238000005859 coupling reaction Methods 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 18
- 239000010453 quartz Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- 238000011282 treatment Methods 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003116 impacting effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、熱処理装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a heat treatment apparatus.
（従来の技術）
被処理体例えば半導体ウェハの製造においては、酸化処
理・拡散処理・アニール処理等の熱処理が行なわれる。(Prior Art) In the manufacture of objects to be processed, such as semiconductor wafers, heat treatments such as oxidation treatment, diffusion treatment, and annealing treatment are performed.
この熱処理は、例えば発熱自在なヒーター線を巻回した
反応管内に、この反応管の長平方向に対して垂直に複数
枚の半導体ウェハを配列搭載したボートを上記反応管の
一端側の開口から内部に挿入し、上記開口を蓋で封止し
て反応管の他端側に設けられているガス供給口から、加
熱状態のウェハ付近に反応ガスを供給して熱処理を行な
う装置が一般的に用いられている。In this heat treatment, for example, a boat in which a plurality of semiconductor wafers are arranged and mounted perpendicularly to the longitudinal direction of the reaction tube is inserted into the reaction tube through an opening on one end side of the reaction tube. A commonly used device is one in which heat treatment is performed by inserting the reaction tube into the wafer, sealing the opening with a lid, and supplying a reaction gas near the heated wafer from a gas supply port provided at the other end of the reaction tube. It is being
このような熱処理を行なう場合、上記ヒーター線の発熱
により内部温度を１０００℃前後の高温とするため、上
記反応管及び蓋を耐熱性の高い石英により形成し、また
、上記反応管内で人体に害のあるガスを使用するため、
反応管内部を気密保持する必要があり、テーパー形状と
した反応管開口端と蓋とのすり合わせによりこの気密性
を得ていた。When performing such heat treatment, the heat generated by the heater wire raises the internal temperature to around 1000°C, so the reaction tube and lid are made of highly heat-resistant quartz, and the inside of the reaction tube is not harmful to the human body. Because we use gas with
It is necessary to maintain the inside of the reaction tube airtight, and this airtightness has been achieved by fitting the tapered open end of the reaction tube with the lid.
このようにテーパー形状とする技術は例えば特公昭５９
−４４７７１号、実公昭５９−２３４１２号、特開昭５
７−１２２０号、特開昭６０−６４４２９号、特開昭６
０−２４５２１６号、特開昭６１−５５２６号、実開昭
６１−１０９１３４号公報等により開示されている。The technology for creating a tapered shape in this way was developed, for example, in the
-44771, Utility Model Publication No. 59-23412, Japanese Patent Application Publication No. 1973
No. 7-1220, JP-A-60-64429, JP-A-6
It is disclosed in Japanese Patent Application Laid-Open No. 0-245216, Japanese Patent Application Laid-open No. 61-5526, Japanese Utility Model Application Publication No. 61-109134, etc.
（発明が解決しようとする問題点）
しかしながら上記従来の技術では１反応管内部で１００
０℃前後に加熱するため、反応管及び蓋が熱膨張して上
記反応管が蓋に深く入り込み、密着の度合いが増し、そ
の結果反応管と蓋が外れなくなる問題があった。(Problem to be solved by the invention) However, in the above conventional technology, 100
Since the reaction tube and the lid are heated to around 0° C., the reaction tube and the lid expand thermally, causing the reaction tube to penetrate deeply into the lid, increasing the degree of adhesion, and as a result, there is a problem that the reaction tube and the lid cannot be removed.
また、上記密着の度合いを増した反応管と蓋を外すため
には、テーパー形状部に極小さい衝撃を加えなければな
らず、この衝撃を加えると、上記反応管及び蓋は石英ガ
ラス製であるため破損の原因となるばかりでなく半導体
に最も良くないゴミ等の発生にもつながっていた。In addition, in order to remove the reaction tube and the lid, which have an increased degree of adhesion, it is necessary to apply a very small impact to the tapered part, and when this impact is applied, the reaction tube and lid are made of quartz glass. This not only causes damage, but also leads to the generation of dust, etc., which is not good for semiconductors.
本発明は上記点に対処してなされたもので、反応管及び
蓋に衝撃を与えずに容易に外すことのできる熱処理装置
を提供しようとするものである。The present invention has been made in response to the above-mentioned problems, and aims to provide a heat treatment apparatus that can be easily removed without impacting the reaction tube and lid.
（問題点を解決するための手段）
本発明は、反応管の端部と蓋とを気密結合するための対
向面に相対的に少なくとも一個の凹部を設けたことを特
徴とする熱処理装置を得るものである。(Means for Solving the Problems) The present invention provides a heat treatment apparatus characterized in that at least one recess is provided in the opposing surface for airtightly connecting the end of the reaction tube and the lid. It is something.
（作用効果）
反応管の端部と蓋とを気密結合するための対向面に相対
的に少なくとも一個の凹部を設けたことにより、上記反
応管の端部と蓋との接触面積を極力小さくすることがで
き、衝撃を与えずに反応管から蓋を外すことができる。(Operation and Effect) By providing at least one relatively recessed portion on the opposing surfaces for airtightly connecting the end of the reaction tube and the lid, the contact area between the end of the reaction tube and the lid is minimized. The lid can be removed from the reaction tube without impacting it.
また、上記衝撃を必要としないため、反応管及び蓋の破
損を防止することができる。Furthermore, since the above-mentioned impact is not required, damage to the reaction tube and lid can be prevented.
（実施例）
以下、本発明装置を半導体ウェハの熱処理に適用した一
実施例につき、図面を参照して説明する。(Example) Hereinafter, an example in which the apparatus of the present invention is applied to heat treatment of semiconductor wafers will be described with reference to the drawings.
被処理体例えば半導体ウェハの酸化処理・拡散処理・ア
ニール処理等を行なう熱処理装置（ト）を第１図に示す
。FIG. 1 shows a heat treatment apparatus (g) that performs oxidation treatment, diffusion treatment, annealing treatment, etc. on an object to be treated, such as a semiconductor wafer.
耐熱性に優れた材質例えば円筒状の石英製反応管■内部
に、複数枚の被処理半導体ウェハ■が整列搭載された石
英ボート（イ）が設定自在となっており、この石英ボー
ト（イ）は図示しないボート搬送機構により搬送自在に
設けられている。この石英ボート＠）に搭載したウェハ
■を間接的に加熱自在な加熱手段（ハ）例えばヒーター
線が上記反応管の外周部に配設され、石英ボー１〜（イ
）上に搭載されたつ工ハ（３）総てを同温で熱処理可能
な如く上記加熱手段が構成されている。また、上記反応
管（２）の一端側には、この反応管■内部に処理ガスを
供給するガス供給管０が設けられ、他端側は開口してお
り、この開口付近に反応管■内部の排気を行なう排気口
■が接続している。上記反応管■の他端側の開口は、蓋
例えば石英製キャップ（８）により封止可能であり、上
記開口端の結合部（９）とキャップ（８）の結合部（１
０）との気密結合で反応管■内部を気密自在としている
。この時、上記開口端の結合部（９）は、上記反応管（
２）の長手方向に対して開口端から幅広になる如くテー
パー状に傾斜し、また、この結合部（９）と係合するキ
ャップ（８）の結合部（１０）も上記結合部（９）の傾
斜に平行となる如く傾斜してこの平行状態で結合可能と
する。この結合部■とキャップ（８）の結合部（１０）
の傾斜角度Ｏは１０〜３０°例えば１６．７゜に設定し
、傾斜しない場合よりシール面積を多少拡くする他、上
記キャップ（８）を反応管■から外し易い状態とする。A quartz boat (A) in which multiple semiconductor wafers to be processed are arranged and mounted inside a cylindrical quartz reaction tube made of a material with excellent heat resistance, such as a cylindrical quartz reaction tube, can be set up freely. is provided so as to be freely conveyable by a boat conveyance mechanism (not shown). Heating means (c) that can indirectly heat the wafers mounted on this quartz boat (c) For example, heater wires are arranged around the outer periphery of the reaction tube, and the wafers mounted on the quartz boats (3) The heating means is constructed so that all the components can be heat-treated at the same temperature. In addition, a gas supply pipe 0 for supplying a processing gas into the reaction tube (2) is provided at one end of the reaction tube (2), and the other end is open, and the inside of the reaction tube (2) is open at the other end. It is connected to the exhaust port ■ that exhausts the air. The opening at the other end of the reaction tube (■) can be sealed with a lid, for example, a quartz cap (8), and the joint (9) at the open end and the joint (1) between the cap (8)
0), the inside of the reaction tube ② can be made airtight. At this time, the connection part (9) at the open end is connected to the reaction tube (
2) The coupling part (10) of the cap (8) is inclined in a tapered manner so as to become wider from the opening end in the longitudinal direction, and also engages with this coupling part (9). are inclined so as to be parallel to the inclination of , so that connection can be made in this parallel state. This joint part ■ and the joint part (10) of the cap (8)
The inclination angle O is set to 10 to 30 degrees, for example, 16.7 degrees, so that the sealing area is somewhat larger than in the case of no inclination, and the cap (8) is made easier to remove from the reaction tube (1).
」二記開目端の結合部（９）は、上記したように傾斜し
ており、この結合部（９）を例えば反応管■開口端外周
に沿って環状に突出し、この突出した結合部（９）の表
面即ち結合面に上記キャップ（８）の内周面即ち結合面
が係合する構成となっている。上記開口端とキャップ（
８）とを気密結合するための対向面即ち結合面に相対的
に少なくとも一個の凹部を形成例えばキャップ（８）の
結合部（１０）の結合面中央部に凸部（１１）をキャッ
プ（８）の内周に沿って環状に設け、この凸部（１１）
に沿って両端に凹部（１２）を設ける（第２図）。 こ
の凸部（１１）と凹部（１２）を設けたことにより、キ
ャップ（８）と反応管■開口端とを接続した際、実際に
接触する部分は上記結合部（９）の結合面の一部と上記
凸部（１１）の表面のみとなり、接触面積は小さくなる
。この接触面積の縮小により考えられる上記反応管■内
部からの処理ガスのリークは、上記傾斜した開口端の結
合部（９）と、この傾斜に平行したキャップ（８）の結
合部（１０）とのすり合わせ結合によりシールされ、従
来と同様に反応管■内部を気密することが可能となって
いる。また、上記キャップ（８）と反応管（２）開口端
のテーパー状に形成された結合部（９）（１０）が摺動
してシールする場合、上記開口端先端が熱処理時におけ
る熱膨脹によりキャップ（８）と接触し、破損又はキズ
を付ける恐れがあるため、キャップ（８）と反応管■開
口端との結合時におけるキャップ（ハ）の開口端先端付
近に、この開口端先端から離れる方向に溝（１３）が設
けられている。このキャップ（８）は、上記反応管■開
目端を開閉自在とする図示しない自動開閉機構に接続し
ている。この接続は、例えば上記キャップ（８）の開口
端と逆側の端部である面に取り付は板（１４）を接触状
態で並設し、この板（１４）の周縁部を複数箇所でネジ
止めして固定されている。この時、キャップ（８）は石
英により構成しているため、ネジ止めによる破損を防止
するためにネジとキャップ（８）との間に石英製の子鹿
及びテフロン（商品名）製の子鹿を介して固定する。2. The joint (9) at the open end is inclined as described above, and this joint (9) is, for example, protruded annularly along the outer periphery of the open end of the reaction tube. The inner circumferential surface of the cap (8), that is, the coupling surface, engages with the surface of cap (9), that is, the coupling surface. Above open end and cap (
Forming at least one recess relative to the opposing surface, that is, the joining surface for airtightly joining the cap (8), for example, forming a protrusion (11) in the center of the joining surface of the joining portion (10) of the cap (8) ) is provided in an annular shape along the inner circumference of the convex portion (11).
Recesses (12) are provided at both ends along the (Fig. 2). By providing the convex portion (11) and the concave portion (12), when the cap (8) and the open end of the reaction tube are connected, the part that actually contacts is a part of the connecting surface of the connecting portion (9). and the surface of the convex portion (11), and the contact area becomes small. The leakage of the processing gas from inside the reaction tube (1), which is thought to be caused by this reduction in contact area, occurs between the connection part (9) of the sloped opening end and the connection part (10) of the cap (8) parallel to this slope. It is sealed by a friction bond, making it possible to keep the inside of the reaction tube airtight, just like in the past. In addition, when the cap (8) and the tapered connecting portions (9) and (10) of the open end of the reaction tube (2) slide to form a seal, the tip of the open end may expand due to thermal expansion during heat treatment. (8) may come into contact with the reaction tube and cause damage or scratches, so when connecting the cap (8) and the open end of the reaction tube A groove (13) is provided in the groove. This cap (8) is connected to an automatic opening/closing mechanism (not shown) which allows the open end of the reaction tube (1) to be freely opened and closed. This connection can be made, for example, by installing mounting plates (14) in parallel and in contact with the surface of the cap (8) that is the opposite end to the open end, and attaching the peripheral edge of the plate (14) at multiple locations. It is fixed with screws. At this time, since the cap (8) is made of quartz, a fawn made of quartz and a fawn made of Teflon (trade name) are inserted between the screw and the cap (8) to prevent damage due to screw fixation. and fix it.
このように固定された板（１４）は、上記自動開閉機構
に連設しているシャフト（１５）に接続し、キャップ（
８）を自動開閉自在としている。このようにして熱処理
装置が構成されている。The plate (14) fixed in this way is connected to the shaft (15) connected to the automatic opening/closing mechanism, and the cap (14) is connected to the shaft (15) connected to the automatic opening/closing mechanism.
8) can be opened and closed automatically. The heat treatment apparatus is configured in this manner.
次に、上述した熱処理装置の動作を説明する。Next, the operation of the heat treatment apparatus described above will be explained.
まず、図示しない自動開閉機構の動作でキャップ（８）
を開き、石英ボート（イ）を搬送例えばソフトランディ
ング技術により上記石英ボート（イ）を反応管■内部の
予め定められた位置しこ設定する。そして、上記自動開
閉機構の動作でキャップ（８）を駆動させてテーパー状
に形成した反応管■開目端とキャップ（８）とを接続さ
せ、反応管（２）の結合部（９）とキャップ（８）の凸
部（１１）とのすり合わせにより上記反応管（２）内部
を気密状態に設定する。ここで、反応管（２）内に不活
性ガス例えば窒素ガスを流入して不純ガスを排出しても
よい。そして、上記反応管（２）内に設定された石英ボ
ート（４）上に搭載されている複数枚のウェハ■を加熱
手段（ハ）の加熱により間接的に所望温度に加熱する。First, the cap (8) is opened by the operation of an automatic opening/closing mechanism (not shown).
Open the quartz boat (A), transport the quartz boat (A), and set the quartz boat (A) at a predetermined position inside the reaction tube (2), for example, by using a soft landing technique. Then, the cap (8) is driven by the operation of the automatic opening/closing mechanism to connect the open end of the tapered reaction tube and the cap (8), and connect the connecting part (9) of the reaction tube (2) with the cap (8). The inside of the reaction tube (2) is set in an airtight state by rubbing the cap (8) against the protrusion (11). Here, an inert gas such as nitrogen gas may be introduced into the reaction tube (2) to discharge impure gas. Then, the plurality of wafers (3) mounted on the quartz boat (4) set in the reaction tube (2) are indirectly heated to a desired temperature by the heating means (c).
ここで、ガス供給管０から上記ウェハ（３）の酸化処理
・拡散処理・アニール処理等の熱処理に対応する処理ガ
スを反応管（２）内へ供給する。この処理ガスの供給と
同時に反応￥１■内のガスを排気口■から排気する。こ
の処理ガスと加熱してウェハ■により成膜や反応等の所
望の処理が行なわれる。そして、予め定められたプロセ
スに従って熱処理を終えた後に、上記反応管（２）内の
ガスを排気し、外気温度によりウェハ（３）にひび割れ
等が発生しない温度までウェハ■温度を低下させ、上記
キャップ（８）を図示しない自動開閉機構により外し、
上記複数枚のウェハ（３）を搭載した石英ボート（イ）
を搬出する。この石英ボートに）を搬出する際にキャッ
プ（８）を取り外すが、上記ウェハ■の熱処理時に反応
管■内を１０００℃前後の高温に設定するため、石英に
より形成された反応管■及びキャップ（８）が熱膨脹し
、テーパー状に形成された反応管■開目端の結合部（９
）と、キャップ（８）の結合部（１０）とが密着度を増
すが、上記結合部（９）と結合部（１０）の接触面積は
、キャップ（８）側に形成した凸部（１１）の表面のみ
であるため、過度の密着によりキャップ（８）と開口端
が外れなくなることはなく、特に従来行なっていた結合
部へ衝撃を加えることを行なわずにキャップ（８）を容
易に外すことができ、自動化に対応可能となる。Here, a processing gas corresponding to heat treatment such as oxidation treatment, diffusion treatment, annealing treatment, etc. of the wafer (3) is supplied from the gas supply pipe 0 into the reaction tube (2). At the same time as this processing gas is supplied, the gas in the reaction ¥1■ is exhausted from the exhaust port ■. By heating the wafer with this processing gas, desired processing such as film formation and reaction is performed on the wafer. After completing the heat treatment according to a predetermined process, the gas in the reaction tube (2) is exhausted, and the wafer temperature is lowered to a temperature at which no cracks or the like occur in the wafer (3) due to the outside air temperature. Remove the cap (8) using an automatic opening/closing mechanism (not shown),
Quartz boat (A) loaded with the above multiple wafers (3)
to be carried out. The cap (8) is removed when transporting the wafers (2) to this quartz boat, but since the inside of the reaction tube (2) is set at a high temperature of around 1000°C during the heat treatment of the wafer (2), the reaction tube (2) and the cap (8) are made of quartz. 8) thermally expands to form a tapered reaction tube.
) and the joint part (10) of the cap (8) increase the degree of adhesion, but the contact area between the joint part (9) and the joint part (10) is smaller than the convex part (11) formed on the cap (8) side. ), the cap (8) and the opening end will not become unremovable due to excessive adhesion, and the cap (8) can be easily removed without applying shock to the joint, which was conventionally done. This makes it possible to respond to automation.
また、反応管（２）開口端とキャップ（８）とを気密結
合するための対向面即ち結合面に相対的に少なくとも−
個の凹部を形成するものとして、キャップ（８）の結合
部（１０）の結合面中央部に凸部（１１）をキャップ（
８）の内周に沿って環状に設け、この凸部（１１）に沿
って両端に凹部（１２）を設ける構成で説明したが、第
３図Ａに示すように複数の凸部（１６）をキャップ（８
）の内周に沿って環状に設けて凹部（１７）を形成する
構成や、第３図Ｂに示すように複数の凹部（１７）をキ
ャップ（８）の内周に沿って環状に設けて凸部（１６）
を形成する構成でも、同様に接触面積を極力小さくする
ことができ、キャップ（８）を容易に外すことができ、
取り外し作業時間を短縮化できる。Moreover, at least −
A convex part (11) is placed in the center of the joint surface of the joint part (10) of the cap (8) to form a concave part (10) of the cap (8).
8) is provided in an annular shape along the inner periphery of the convex portion (11), and concave portions (12) are provided at both ends along the convex portion (11). However, as shown in FIG. cap (8
), or a plurality of recesses (17) are provided annularly along the inner periphery of the cap (8) as shown in FIG. 3B. Convex part (16)
Even in the configuration in which the cap (8) is formed, the contact area can be similarly minimized, and the cap (8) can be easily removed.
Removal work time can be shortened.
このようにキャップ（８）を加工して上記構成にすると
低コストで従来のキャップの加工又は変更で容易に実行
でき、また、キャップは従来通りで反応管■開目端に上
記凹凸を形成しても、キャップと反応管■開目端の両方
に上記凹凸を形成しても同様に行なうことができる。If the cap (8) is processed in this way to have the above structure, it can be easily carried out at low cost by processing or modifying the conventional cap.Also, the cap can be made in the same manner as before, and the above-mentioned unevenness can be formed at the open end of the reaction tube. However, the same effect can be achieved by forming the above-mentioned irregularities on both the cap and the open end of the reaction tube.
上記実施例ではキャップ（８）と反応管■開口端に相対
的に凹凸を有する形状としたが、上記キャップ（８）と
反応管■を気密結合する対向面にリング状のシール機能
を有するスペーサーを設けても同様な効果が得られる。In the above embodiment, the opening end of the cap (8) and the reaction tube (2) were relatively uneven, but there is a spacer having a ring-shaped sealing function on the opposing surface that airtightly connects the cap (8) and the reaction tube (2). A similar effect can be obtained by providing .
また、上記実施例では反応管■及びキャップ（８）を夫
々耐熱性に優れた石英により構成して説明したが、他の
耐熱性に優れた材質でもよい。しかし、上記反応管（２
）及びキャップ（８）を相対的に異なる材質により構成
すると、夫々の熱膨張率が異なり、反応管■内の処理ガ
スのリークの原因や、反応管■及びキャップ（８）の破
損の原因となることが発生するため、好ましくは夫々を
同材質で構成した方が安全に作業を行なうことができる
。Further, in the above embodiment, the reaction tube (1) and the cap (8) were each made of quartz having excellent heat resistance, but they may be made of other materials having excellent heat resistance. However, the reaction tube (2
) and the cap (8) are made of relatively different materials, their coefficients of thermal expansion will differ, which may cause leakage of the process gas inside the reaction tube (■) or damage to the reaction tube (■) and the cap (8). Preferably, they are made of the same material for safer work.
以−ヒ述べたようにこの実施例によれば、反応管の端部
と蓋とを気密結合するための対向面に相対的に少なくと
も一個の凹部を設けたことにより、上記反応管の端部と
蓋との接触面積を極力小さくすることができ、衝撃を与
えずに反応管から蓋を外すことができる。As described below, according to this embodiment, at least one recess is provided in the opposing surfaces for airtightly connecting the end of the reaction tube and the lid, so that the end of the reaction tube is The contact area between the lid and the lid can be made as small as possible, allowing the lid to be removed from the reaction tube without causing any impact.
また、上記衝撃を必要としないため、反応管及び蓋の破
損を防止することができる。Furthermore, since the above-mentioned impact is not required, damage to the reaction tube and lid can be prevented.
第１図は本発明装置の一実施例を説明するための熱処理
装置の構成図、第２図は第１図のキャップ結合部の拡大
図、第３図は第１図の他の実施例説明図である。
１・・・熱処理装置 ２・反応管
８・・キャップ ９，１０・・結合部１１、１６
・・凸部 １２．１７・・凹部特許出願人 チ
ル・サームコ株式会社〇〕
第３ 図Ａ
第３ 図ＢFIG. 1 is a configuration diagram of a heat treatment apparatus for explaining one embodiment of the apparatus of the present invention, FIG. 2 is an enlarged view of the cap joint part of FIG. 1, and FIG. 3 is an explanation of another embodiment of the device of the present invention. It is a diagram. 1...Heat treatment device 2.Reaction tube 8...Cap 9, 10...Joining part 11, 16
... Convex portion 12.17... Concave portion Patent applicant Chill Thermco Co., Ltd. 〇〕 Figure 3 A Figure 3 B
Claims (2)
に相対的に少なくとも一個の凹部を設けたことを特徴と
する熱処理装置。(1) A heat treatment apparatus characterized in that at least one recess is provided on opposing surfaces for airtightly connecting the end of the reaction tube and the lid.
て環状に形成することを特徴とする特許請求の範囲第１
項記載の熱処理装置。(2) The recess is formed in an annular shape along the outer periphery of the end of the reaction tube or the inner periphery of the lid.
The heat treatment equipment described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31806087A JPH01158725A (en) | 1987-12-15 | 1987-12-15 | Heat treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31806087A JPH01158725A (en) | 1987-12-15 | 1987-12-15 | Heat treatment apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01158725A true JPH01158725A (en) | 1989-06-21 |
Family
ID=18095032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31806087A Pending JPH01158725A (en) | 1987-12-15 | 1987-12-15 | Heat treatment apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01158725A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111315A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Lid opening/closing device |
| JPS6090900A (en) * | 1983-10-25 | 1985-05-22 | Mitsubishi Electric Corp | Method for diffusing impurity into compound semiconductor |
| JPS62262420A (en) * | 1986-05-09 | 1987-11-14 | Toshiba Corp | Method of sealing heat resisting tube for heating semiconductor |
-
1987
- 1987-12-15 JP JP31806087A patent/JPH01158725A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111315A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Lid opening/closing device |
| JPS6090900A (en) * | 1983-10-25 | 1985-05-22 | Mitsubishi Electric Corp | Method for diffusing impurity into compound semiconductor |
| JPS62262420A (en) * | 1986-05-09 | 1987-11-14 | Toshiba Corp | Method of sealing heat resisting tube for heating semiconductor |
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