JPS6245020A - Method for sealing quartz tube for semiconductor heating - Google Patents
Method for sealing quartz tube for semiconductor heatingInfo
- Publication number
- JPS6245020A JPS6245020A JP18393785A JP18393785A JPS6245020A JP S6245020 A JPS6245020 A JP S6245020A JP 18393785 A JP18393785 A JP 18393785A JP 18393785 A JP18393785 A JP 18393785A JP S6245020 A JPS6245020 A JP S6245020A
- Authority
- JP
- Japan
- Prior art keywords
- quartz tube
- quartz
- tube
- cover
- tubular body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体素子の製造工程に不可欠な加熱炉に利用
する石英管及びその石英蓋の嵌合方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a quartz tube used in a heating furnace essential to the manufacturing process of semiconductor devices, and a method for fitting a quartz lid thereto.
最近、半導体製品の生産規模はますます増大の傾向にあ
り、生産性の高い製造ラインの確立が求められており、
その−環として半導体ウェーへのサイズは大口径化の方
向にある。Recently, the scale of production of semiconductor products has been increasing, and there is a need to establish highly productive manufacturing lines.
As a link to this, the size of semiconductor wafers is trending toward larger diameters.
このような半導体ウェーハの大口径化に伴い。As semiconductor wafers become larger in diameter.
人手によるハンドリングは困難となりウェーハの搬送や
装置へのセツティング等必然的に自動化が必要となる。Manual handling becomes difficult, and automation of wafer transport and equipment setting is inevitably required.
一方、超LSIに代表されるように、最近の半導体デバ
イスは高性能化、高集積化の進歩が著るしく、それにと
もなって製造プロセスも複雑多岐にわたっており、製造
ラインの清浄度が歩留りに与える影響は大きく、じんあ
いの発生源である人体を遠ざける意味からも自動化の意
義は大きい。On the other hand, recent semiconductor devices, as typified by VLSI, have made remarkable progress in improving performance and increasing integration, and as a result, manufacturing processes have become more complex and diverse, and the cleanliness of the manufacturing line has an impact on yield. The impact is significant, and automation is also of great significance in terms of keeping the human body, which is the source of dust, away from the environment.
ところで半導体ウェーハ等の製造工程に不可欠な拡散炉
等の加熱炉ではヒータ等の加熱源を埋設した断熱性管体
を設け、ここに石英管を挿出入可能に配置する。被加熱
体である半導体ウェーハ等は不純物による汚染を防ぐ必
要があるために、安定化物質と化学的成分や性質が近い
物質である石英及びSiCが半導体ウェーハを包囲する
管体材料として選定されている。一方、この石英管等は
配置した半導体ウェーハの熱処理温度として1000℃
程度が必要となるために耐熱性に秀れた材料が適用され
る。By the way, in a heating furnace such as a diffusion furnace which is indispensable in the manufacturing process of semiconductor wafers, etc., a heat insulating tube body in which a heating source such as a heater is embedded is provided, and a quartz tube is arranged so as to be insertable and extractable therein. Because it is necessary to prevent contamination of semiconductor wafers, which are objects to be heated, from impurities, quartz and SiC, which are substances with similar chemical composition and properties to the stabilizing substance, are selected as the tube material surrounding the semiconductor wafer. There is. On the other hand, this quartz tube etc. has a heat treatment temperature of 1000℃ for the semiconductor wafer placed on it.
Since a high degree of heat resistance is required, materials with excellent heat resistance are used.
従って、加熱源を埋設した断熱性管体に挿出入可能に配
置する石英管端を塞ぐ蓋体も円筒状石英で構成し1両体
の一体化は、その端末付近に形成した同角度のテーパ部
を嵌合する方法に頼っている。尚このテーパ部は摺り合
せ加工を施して滑めらかに形成する。Therefore, the lid body that closes the end of the quartz tube, which is placed so that it can be inserted into and taken out from the heat-insulating tube body in which the heating source is buried, is also made of cylindrical quartz, and the two bodies are integrated by a taper of the same angle formed near the end. It depends on the way the parts fit together. Note that this tapered portion is formed smoothly by applying a rubbing process.
ところで製造ラインの清浄度が半導体素子の歩留りに影
響を与える度合いが増大している最近ではいわゆるソフ
トランダーが開発され実用化段階に入っているほかに、
加熱炉に使用される石英管ならびに蓋部の洗滌にも工夫
が加えられる傾向にある。即ち1石英管とこれに嵌合し
た蓋部とをクリーンルーム内に位置させ、その洗滌に当
ってはクリーンルーム外に位置する加熱炉の開口部から
蓋部と一体化した石英管を取り出してクリーンルーム内
への汚染源散乱を防止する考え方である。By the way, the degree to which the cleanliness of the manufacturing line has an increasing effect on the yield of semiconductor devices has recently been developed, and in addition to the so-called soft lander that has been developed and is entering the stage of practical use.
There is also a trend toward improved cleaning of the quartz tubes and lids used in heating furnaces. That is, a quartz tube and a lid fitted thereto are placed in a clean room, and for cleaning, the quartz tube integrated with the lid is taken out from the opening of the heating furnace located outside the clean room and placed inside the clean room. The idea is to prevent pollution sources from scattering into the air.
〔背景技術の問題点〕
石英管及び円筒状蓋部の端末に形成したテーパ部の角度
は約1/10であり、その長さは50mm程度である。[Problems with Background Art] The angle of the tapered portion formed at the end of the quartz tube and the cylindrical lid portion is approximately 1/10, and the length thereof is approximately 50 mm.
しかし両者の嵌合に当って、開口面の大きい蓋部を強く
差し込むと取り外しが困難となり蓋部に軽い衝撃を与え
てゆるみを作ってから取り外すか、壊すすかの方法しか
なかった。However, when fitting the two together, if the lid with a large opening is pushed too hard, it becomes difficult to remove the lid, and the only way to do this is to apply a light impact to the lid to loosen it and then remove it, or break it.
又一体化した石英管と蓋体が高温加熱冷却のサイクルを
長時間にわたって繰り返すとその取り外しは益々困難と
なる。従って、通常は作業者が嵌合する場合の力を勘に
よって調整しており、当然一定でない。これらの一連の
動作を機械的に実施する際には当然かなり強い力が必要
となるので、石英管を破損する頻度が大きかった。Furthermore, if the integrated quartz tube and lid undergo high-temperature heating and cooling cycles over a long period of time, it becomes increasingly difficult to remove them. Therefore, the force for fitting is usually adjusted by the operator based on intuition, and is naturally not constant. Naturally, when performing a series of these operations mechanically, a fairly strong force is required, so the quartz tube is frequently damaged.
本発明は上記難点を除去する半導体加熱用石英管のシー
ル方法を提供するものである。The present invention provides a method for sealing a quartz tube for semiconductor heating, which eliminates the above-mentioned difficulties.
上記目的を達成するため、本発明では石英管ならびに円
筒状石英蓋部端末付近には傾斜角度1/2〜1/6のテ
ーパ部を設けると共に摺り合せ加工を施して滑かにして
両者を嵌合する手法を採用した。In order to achieve the above object, in the present invention, a tapered part with an inclination angle of 1/2 to 1/6 is provided near the end of the quartz tube and the cylindrical quartz lid part, and a sliding process is performed to make the two fit together smoothly. We adopted a method that matches each other.
尚この1/6の傾斜角度よりゆるめると石英管との取り
外しが困難となり1/2を超えると被加熱半導体ウェー
ハの挿入ができなくなるために上記数値を限定する。こ
の両者の嵌合に当っては円筒状石英蓋部を外側としてそ
の離脱に必要とする力を加えることができるようにした
。Note that if the inclination angle is less than 1/6, it will be difficult to remove the quartz tube, and if it exceeds 1/2, it will be impossible to insert the semiconductor wafer to be heated, so the above numerical value is limited. When fitting these two together, the cylindrical quartz lid was placed on the outside so that the force necessary to separate them could be applied.
本発明を図面により詳細に説明する。 The present invention will be explained in detail with reference to the drawings.
半導体ウェーハ等の製造工程に使用する加熱炉はヒータ
等の加熱源を断熱材料内に埋設して管状体(図示せず)
を形成し、ここに石英管(1)を挿出入可能に設置する
。この設置に当ってはこの管状体の軸に直交する方向を
多段に仕切り、この各段に複数の石英管を配置する方式
と前記管状体と同軸方向に複数の石英管を設置する方式
とがある。A heating furnace used in the manufacturing process of semiconductor wafers, etc. is a tubular body (not shown) with a heating source such as a heater buried in a heat insulating material.
, and the quartz tube (1) is installed here so that it can be inserted and removed. For this installation, there are two methods: partitioning the tubular body into multiple stages in the direction perpendicular to the axis, and arranging multiple quartz tubes in each stage, and installing multiple quartz tubes coaxially with the tubular body. be.
この石英管は20φ〜300φのものが使用され、管状
体との間にSiC管を配置して均熱効果を増す場合もあ
る。一方、円筒状石英からなる蓋部(2)を用意して、
石英管(1)ともどもその端末から50mm程度の間に
傾斜角度1/6〜1/2のテーパ部(3) (3)を設
け、ここを摺り合せ加工によって滑らかに仕上げる。こ
の両者の嵌合に当っては蓋部(2)を外側として一体と
する。勿論この嵌合は石英管(1)を管状体に設定後で
あっても構わない。尚蓋部(2)には半導体ウェーハを
載置した治具及び操作棒を挿入可とする孔部(4)を設
ける。This quartz tube has a diameter of 20 φ to 300 φ, and a SiC tube may be placed between the tube and the tubular body to increase the heat uniformity effect. On the other hand, a lid part (2) made of cylindrical quartz is prepared,
A tapered part (3) with an inclination angle of 1/6 to 1/2 is provided between about 50 mm from the end of the quartz tube (1), and this part is smoothed by rubbing. When fitting these two together, they are integrated with the lid (2) on the outside. Of course, this fitting may be performed after the quartz tube (1) is set in the tubular body. The lid (2) is provided with a hole (4) into which a jig on which a semiconductor wafer is placed and an operating rod can be inserted.
このように本発明方法では石英管と円筒状石英蓋部の着
脱が容易であるために、石英管の破損を防止できるほか
に、機械による着脱が可能になる。As described above, in the method of the present invention, since the quartz tube and the cylindrical quartz lid can be easily attached and detached, it is possible to prevent damage to the quartz tube and also to enable mechanical attachment and detachment.
と言うのは、この嵌合即ちシール方法では同一の材料で
ある石英で両部品を構成し1石英管の内部方向へのかが
弱められるので安定した着脱が可能となる。従って、円
筒状石英蓋部を機械的に衡え。This is because, in this fitting or sealing method, both parts are made of the same material, quartz, and the inward direction of the quartz tube is weakened, allowing stable attachment and detachment. Therefore, the cylindrical quartz lid part is mechanically balanced.
その軸方向と平行な方向に移動することによってその離
脱が可能となり、更に一定の機械力によって達成できる
ので、自動化が可能となり、ひいてはじんあい発生源で
ある人体を遠ざけることも可能となる。依って半導体ウ
ェーハの歩留り向上に寄与することができる。Its detachment is possible by moving in a direction parallel to its axis, and can be achieved with a constant mechanical force, making it possible to automate it and also to keep away the human body, which is a source of dust. Therefore, it can contribute to improving the yield of semiconductor wafers.
図面は本発明方法を実施する工程の一部を示す断面図で
ある。The drawings are cross-sectional views showing a part of the process of carrying out the method of the present invention.
Claims (1)
石英管端末付近にテーパ部を設け、このテーパ部に嵌合
する端末部をもつ石英蓋部とを備え、摺り合せ加工を施
したテーパ角度を1/6〜1/2に形成することにより
その着脱を容易にすることを特徴とする半導体加熱用石
英管のシール方法。A quartz tube for semiconductor heating that is inserted into an insulating tube in which a heating source is placed has a tapered part near the end thereof, and a quartz cover part that has a terminal part that fits into the tapered part, and is a taper that has been subjected to a sliding process. A method for sealing a quartz tube for semiconductor heating, characterized in that the angle is formed to be 1/6 to 1/2 to facilitate attachment and detachment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18393785A JPS6245020A (en) | 1985-08-23 | 1985-08-23 | Method for sealing quartz tube for semiconductor heating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18393785A JPS6245020A (en) | 1985-08-23 | 1985-08-23 | Method for sealing quartz tube for semiconductor heating |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6245020A true JPS6245020A (en) | 1987-02-27 |
Family
ID=16144411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18393785A Pending JPS6245020A (en) | 1985-08-23 | 1985-08-23 | Method for sealing quartz tube for semiconductor heating |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6245020A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0335870A (en) * | 1989-07-04 | 1991-02-15 | Mitsubishi Alum Co Ltd | Manufacture of heat exchanger |
US5245158A (en) * | 1991-01-17 | 1993-09-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device manufacturing apparatus |
JPH06234082A (en) * | 1990-06-28 | 1994-08-23 | Kankoku Kikai Kenkyusho | Method for liquid phase diffusion bonding using insert material higher in melting temperature than base metal |
US10562129B2 (en) | 2015-12-03 | 2020-02-18 | Honda Motor Co., Ltd. | Method for bonding steel material and device for bonding steel material |
-
1985
- 1985-08-23 JP JP18393785A patent/JPS6245020A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0335870A (en) * | 1989-07-04 | 1991-02-15 | Mitsubishi Alum Co Ltd | Manufacture of heat exchanger |
JPH06234082A (en) * | 1990-06-28 | 1994-08-23 | Kankoku Kikai Kenkyusho | Method for liquid phase diffusion bonding using insert material higher in melting temperature than base metal |
US5245158A (en) * | 1991-01-17 | 1993-09-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device manufacturing apparatus |
US10562129B2 (en) | 2015-12-03 | 2020-02-18 | Honda Motor Co., Ltd. | Method for bonding steel material and device for bonding steel material |
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