JPS6227724B2 - - Google Patents
Info
- Publication number
- JPS6227724B2 JPS6227724B2 JP56088396A JP8839681A JPS6227724B2 JP S6227724 B2 JPS6227724 B2 JP S6227724B2 JP 56088396 A JP56088396 A JP 56088396A JP 8839681 A JP8839681 A JP 8839681A JP S6227724 B2 JPS6227724 B2 JP S6227724B2
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- furnace
- heat treatment
- furnace core
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
【発明の詳細な説明】
本発明は、半導体装置特に大規模集積回路（以
下LSIと略す）を作製する場合の熱処理装置に関
するものであつて、ウエハに異物が付着せず、
ウエハの挿入・取り出し時における炉外からの
大気の逆流（以下バツク・デイフユージヨンと称
す）を防ぐ事が出来るようにすることを目的とし
たものである。
LSIの製作は、通常、酸化・拡散等の熱処理工
程、選択的に不要な酸化膜等を除去するホトリソ
グラフイー工程とエツチング工程、そして電極や
絶縁膜を堆積するデポジシヨン工程等から成り立
つている。これらの工程のうち、熱処理工程につ
いて以下に詳しく述べる。
熱処理装置は簡単に言えば通常、第１図に示す
ように一端を細くした炉芯管１と、これを熱し温
度を制御する電源制御部２と、炉芯管１中に必要
なガスを導入するガスライン部３及び炉外からの
汚染防止のためのキヤツプ４等から成り立つてい
る。
このような熱処理炉芯管１中にウエハ（半導体
基体）を挿入して、処理を行なうわけであるが、
通常第２図に示すような構５を持つたボート６を
使用する。なお、これらは、いずれも非常に高温
例えば400〜1200℃という温度で使用せられ、か
つ不純物重金属イオン等からの汚染を防ぐため
に、石英や炭化ケイ素といつた材料が用いられる
事が多い。さて、このボート６の溝にウエハ７を
積載した後、炉芯管１の端部に置き、ボート６の
端に引き出し棒８を掛けて炉芯管中央部までこの
ボートを挿入する。そしてキヤツプ４をして、必
要なガス例えば酸化工程ならば酸素や水蒸気、ア
ニール工程なら窒素等の不活性ガス、拡散工程な
らばPH3やB2H6等の不純物源ガスをガスライン３
より流し、必要な時間だけ処理を行なう。終了す
ればキヤツプ４をはずし引き出し棒８をボート６
に掛けて、取り出す。これが熱処理工程の概要で
ある。ウエハは現在LSIの主流であるシリコンに
とどまらず他の材料であつても同じことである。
さて、この熱処理工程の問題点として次の２つの
事があげられる。
○
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heat treatment apparatus for manufacturing semiconductor devices, particularly large-scale integrated circuits (hereinafter abbreviated as LSI), which prevents foreign matter from adhering to wafers.
The purpose of this is to prevent the backflow of air from outside the furnace (hereinafter referred to as back diffusion) when inserting and removing wafers. LSI manufacturing usually consists of heat treatment processes such as oxidation and diffusion, photolithography and etching processes to selectively remove unnecessary oxide films, and deposition processes to deposit electrodes and insulating films. Among these steps, the heat treatment step will be described in detail below. To put it simply, a heat treatment device usually consists of a furnace core tube 1 with one end tapered, a power supply control section 2 that heats the core tube and controls the temperature, and necessary gases introduced into the furnace core tube 1, as shown in Figure 1. The furnace consists of a gas line section 3, a cap 4, etc. for preventing contamination from outside the furnace. A wafer (semiconductor substrate) is inserted into such a heat treatment furnace core tube 1 to perform the treatment.
Usually, a boat 6 having a structure 5 as shown in FIG. 2 is used. All of these materials are used at very high temperatures, for example, 400 to 1200° C., and materials such as quartz and silicon carbide are often used to prevent contamination from impurity heavy metal ions. After the wafers 7 are loaded in the groove of the boat 6, they are placed on the end of the furnace core tube 1, the pull-out rod 8 is hooked to the end of the boat 6, and the boat is inserted to the center of the furnace core tube. Then, cap 4 is installed, and necessary gases such as oxygen and water vapor for the oxidation process, inert gases such as nitrogen for the annealing process, and impurity source gases such as PH 3 and B 2 H 6 for the diffusion process are transferred to the gas line 3.
Allow the process to flow more slowly and process only for the required amount of time. When finished, remove cap 4 and pull out rod 8 from boat 6.
Hang it on and take it out. This is an overview of the heat treatment process. The same applies to wafers not only made of silicon, which is currently the mainstream for LSIs, but also other materials.
Now, there are the following two problems in this heat treatment process. ○…
Claims (1)
基体を設置した後、第２の炉芯管に前記第１の炉
芯管を挿入して前記半導体基体に熱処理を施すこ
とを特徴とする熱処理方法。 ２ 第２のガスラインと第２の炉芯管よりなる電
気炉設備中の第２の炉芯管より細い開口部を有し
該開口部と反対側の他端を細く絞つた第１の炉芯
管と、上記第１の炉芯管の絞られた他端より接続
された第１のガスラインとを備えたことを特徴と
する熱処理装置。[Scope of Claims] 1. After installing a semiconductor substrate into a first furnace core tube while introducing gas, the first furnace core tube is inserted into a second furnace core tube and the semiconductor substrate is attached to the semiconductor substrate. A heat treatment method characterized by applying heat treatment. 2. A first furnace in an electric furnace equipment consisting of a second gas line and a second furnace core tube, which has an opening narrower than the second furnace core tube and whose other end on the opposite side of the opening is narrowed. A heat treatment apparatus comprising: a core tube; and a first gas line connected to the other constricted end of the first furnace core tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8839681A JPS57202727A (en) | 1981-06-09 | 1981-06-09 | Method and device for heat treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8839681A JPS57202727A (en) | 1981-06-09 | 1981-06-09 | Method and device for heat treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57202727A JPS57202727A (en) | 1982-12-11 |
| JPS6227724B2 true JPS6227724B2 (en) | 1987-06-16 |
Family
ID=13941627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8839681A Granted JPS57202727A (en) | 1981-06-09 | 1981-06-09 | Method and device for heat treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57202727A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0787185B2 (en) * | 1985-01-11 | 1995-09-20 | 株式会社デンコ− | Semiconductor heat treatment method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5742008Y2 (en) * | 1976-10-08 | 1982-09-16 |
-
1981
- 1981-06-09 JP JP8839681A patent/JPS57202727A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57202727A (en) | 1982-12-11 |
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