JPH04361527A - Surface processing method and application of semiconductor heat treatment jig - Google Patents
Surface processing method and application of semiconductor heat treatment jigInfo
- Publication number
- JPH04361527A JPH04361527A JP13751591A JP13751591A JPH04361527A JP H04361527 A JPH04361527 A JP H04361527A JP 13751591 A JP13751591 A JP 13751591A JP 13751591 A JP13751591 A JP 13751591A JP H04361527 A JPH04361527 A JP H04361527A
- Authority
- JP
- Japan
- Prior art keywords
- jig
- heat treatment
- silicon carbide
- oxide film
- semiconductor heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000010438 heat treatment Methods 0.000 title claims abstract description 14
- 238000003672 processing method Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000004381 surface treatment Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract description 2
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、半導体熱処理用治具
の表面処理方法および使用方法に関し、特に炭化珪素よ
りなる治具から、半導体材料への金属汚染防止方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of surface treatment and use of a jig for semiconductor heat treatment, and more particularly to a method of preventing metal contamination from a jig made of silicon carbide to a semiconductor material.
【０００２】0002
【従来の技術】炉芯管，ボート等の半導体の拡散，押込
み用，酸化用等の熱処理用治具は、その純度を要求され
ることにより、石英ガラス質のものが多用されていたが
、最近、これに代わって耐熱性にまさる炭化珪素からな
るものが採用されている。[Prior Art] Heat treatment jigs for semiconductor diffusion, pushing, oxidation, etc., such as furnace core tubes and boats, are often made of quartz glass due to the requirement of purity. Recently, silicon carbide, which has superior heat resistance, has been used instead.
【０００３】そして、使用に先立って、酸で洗う（エッ
チング）等により付着した汚れ等を除去して使用してい
る。[0003] Before use, adhering dirt and the like are removed by washing with acid (etching) or the like.
【０００４】0004
【発明が解決しようとする課題】しかしながら、上記の
炭化珪素からなる治具は、材料の純度が半導体用治具と
して多用されている石英ガラスと比べ悪く、また使用用
途がその耐熱性を利用した高温炉（１０００〜１４００
℃）であるため、治具に内在する不純物からの半導体材
料への金属汚染が発生するという欠点があった。[Problems to be Solved by the Invention] However, the purity of the material of the silicon carbide jig described above is inferior to that of quartz glass, which is often used as a semiconductor jig, and the purpose of use is to take advantage of its heat resistance. High temperature furnace (1000~1400
℃), there was a drawback that metal contamination of the semiconductor material from impurities inherent in the jig occurred.
【０００５】[0005]
【課題を解決するための手段】この発明は、使用に先立
って炭化珪素よりなる半導体熱処理用治具に水分を含む
雰囲気で熱処理を施し、表面に酸化膜を形成することを
特徴とする。[Means for Solving the Problems] The present invention is characterized in that, prior to use, a semiconductor heat treatment jig made of silicon carbide is heat treated in an atmosphere containing moisture to form an oxide film on the surface.
【０００６】さらに、水分を含む雰囲気は酸素中に水素
を導入する。Furthermore, a moisture-containing atmosphere introduces hydrogen into the oxygen.
【０００７】[0007]
【作用】上記処理により治具表面に形成した酸化膜は、
炭化珪素中に含まれる金属不純物が、半導体材料の熱処
理時に半導体材料へ拡散することを防止するマスク材と
して働く。[Operation] The oxide film formed on the jig surface by the above treatment is
It acts as a mask material that prevents metal impurities contained in silicon carbide from diffusing into the semiconductor material during heat treatment of the semiconductor material.
【０００８】また、表面の金属不純物をも酸化し、酸化
膜中に取り込み、金属不純物の半導体材料への拡散の低
減を行う。水により酸化するので、特別の薬品を用いる
ような特別な安全または除害のための処理を要しない。Furthermore, metal impurities on the surface are also oxidized and incorporated into the oxide film, thereby reducing diffusion of the metal impurities into the semiconductor material. Since it is oxidized by water, it does not require any special safety or abatement treatment such as the use of special chemicals.
【０００９】[0009]
【実施例】以下、この発明について図面を参照して説明
する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained below with reference to the drawings.
【００１０】図１はこの発明の一実施例の拡散炉用治具
である。図において、１は炉芯管，２はガス導入管，３
は半導体材料載置のウェーハ保持具であり、それぞれ炭
化珪素によりなっている。使用に先立って、炉（図示せ
ず）に炉芯管１，ガス導入管２等を使用状態にセットし
、ウェーハ保持具３等その他の治具を炉芯管１内に挿入
する。ガス導入管２から酸素を流しつつ炉を昇温する。
温度が９５０〜１２００℃の処理温度になった後、ガス
導入管２から水素も導入する。水素と酸素は反応して水
となり、炭化珪素の酸化の速度を速くする。水素と酸素
とで水を作る本実施例に代えて、温純水に酸素をバルブ
して導入するとか、酸素に加え純水を沸騰させた水蒸気
を導入しても良い。この方法によれば、酸化速度が速く
、また塩酸酸化のように特別なガス混合装置も必要とせ
ず、治具表面を酸化することができ、またガスを切り替
えるだけで半導体材料の熱処理を行うことができる。FIG. 1 shows a jig for a diffusion furnace according to an embodiment of the present invention. In the figure, 1 is a furnace core tube, 2 is a gas introduction tube, and 3 is a furnace core tube.
are wafer holders on which semiconductor materials are placed, and each is made of silicon carbide. Prior to use, the furnace core tube 1, gas introduction tube 2, etc. are set in a furnace (not shown) in a working state, and the wafer holder 3 and other jigs are inserted into the furnace core tube 1. The temperature of the furnace is raised while flowing oxygen through the gas introduction pipe 2. After the temperature reaches a processing temperature of 950 to 1200°C, hydrogen is also introduced from the gas introduction pipe 2. Hydrogen and oxygen react to form water, increasing the rate of oxidation of silicon carbide. Instead of this embodiment in which water is made from hydrogen and oxygen, oxygen may be introduced into warm pure water through a valve, or steam obtained by boiling pure water may be introduced in addition to oxygen. According to this method, the oxidation speed is fast, and unlike hydrochloric acid oxidation, a special gas mixing device is not required, and the surface of the jig can be oxidized, and semiconductor materials can be heat-treated simply by switching the gas. Can be done.
【００１１】図２はこの発明により、表面酸化した治具
の断面図である。図に示すように、炭化珪素材４の表面
に、酸化膜５が形成され、この酸化膜５が炭化珪素素材
中の金属不純物の拡散をマスクする。FIG. 2 is a sectional view of a jig whose surface has been oxidized according to the present invention. As shown in the figure, an oxide film 5 is formed on the surface of silicon carbide material 4, and this oxide film 5 masks the diffusion of metal impurities in the silicon carbide material.
【００１２】0012
【発明の効果】以上説明したように、この発明は治具表
面を酸化することで、半導体材料に対する金属不純物の
治具からの汚染を低減させる効果があり、例えば１００
０〜１２００℃の温度で、数時間の処理を行った際に、
半導体材料を汚染する鉄，ニッケル，クロム，銅等の重
金属量を１桁〜２桁低減することができる。As explained above, the present invention has the effect of reducing the contamination of semiconductor materials by metal impurities from the jig by oxidizing the surface of the jig.
When treated for several hours at a temperature of 0 to 1200℃,
The amount of heavy metals such as iron, nickel, chromium, and copper that contaminate semiconductor materials can be reduced by one to two orders of magnitude.
【図１】 この発明の一実施例の拡散炉用治具の断面
図[Fig. 1] Cross-sectional view of a jig for a diffusion furnace according to an embodiment of the present invention
【図２】 この発明により表面酸化した治具の拡大
断面図[Figure 2] Enlarged cross-sectional view of a jig whose surface has been oxidized according to the present invention
１ 熱処理用治具（炉芯管）
２ 熱処理用治具（ガス導入管）
３ 熱処理用治具（ウェーハ保持具）４ 炭化珪素
素材
５ 酸化膜1 Heat treatment jig (furnace core tube) 2 Heat treatment jig (gas introduction tube) 3 Heat treatment jig (wafer holder) 4 Silicon carbide material 5 Oxide film
Claims (3)
酸素に水素を導入した高温雰囲気で処理し、その表面に
酸化膜形成することを特徴とする半導体熱処理用治具の
表面処理方法。Claim 1: A jig for semiconductor heat treatment made of silicon carbide,
A method for surface treatment of a jig for semiconductor heat treatment, characterized by forming an oxide film on the surface of the jig by performing treatment in a high-temperature atmosphere containing oxygen and hydrogen.
理を施して表面に酸化膜を形成し、その後に使用するこ
とを特徴とする炭化珪素よりなる半導体熱処理用治具の
使用方法。2. A method of using a semiconductor heat treatment jig made of silicon carbide, which comprises performing heat treatment in an atmosphere containing moisture to form an oxide film on the surface before use, and then using the jig.
したものである請求項２の半導体熱処理用治具の使用方
法。3. The method of using the jig for semiconductor heat treatment according to claim 2, wherein the moisture-containing atmosphere is one in which hydrogen is introduced into oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13751591A JPH04361527A (en) | 1991-06-10 | 1991-06-10 | Surface processing method and application of semiconductor heat treatment jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13751591A JPH04361527A (en) | 1991-06-10 | 1991-06-10 | Surface processing method and application of semiconductor heat treatment jig |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04361527A true JPH04361527A (en) | 1992-12-15 |
Family
ID=15200479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13751591A Pending JPH04361527A (en) | 1991-06-10 | 1991-06-10 | Surface processing method and application of semiconductor heat treatment jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04361527A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005031843A1 (en) * | 2003-09-29 | 2005-04-07 | Hitachi Kokusai Electric Inc. | Thermal treatment device and method of manufacturing substrate |
| JP2012004270A (en) * | 2010-06-16 | 2012-01-05 | Sumitomo Electric Ind Ltd | Method of cleaning silicon carbide semiconductor, silicon carbide semiconductor, and silicon carbide semiconductor device |
| JP2015216266A (en) * | 2014-05-12 | 2015-12-03 | キヤノン株式会社 | Method of cleaning base, method of heat treatment of semiconductor wafer, and method of manufacturing solid state image pickup device |
-
1991
- 1991-06-10 JP JP13751591A patent/JPH04361527A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005031843A1 (en) * | 2003-09-29 | 2005-04-07 | Hitachi Kokusai Electric Inc. | Thermal treatment device and method of manufacturing substrate |
| JP2012004270A (en) * | 2010-06-16 | 2012-01-05 | Sumitomo Electric Ind Ltd | Method of cleaning silicon carbide semiconductor, silicon carbide semiconductor, and silicon carbide semiconductor device |
| JP2015216266A (en) * | 2014-05-12 | 2015-12-03 | キヤノン株式会社 | Method of cleaning base, method of heat treatment of semiconductor wafer, and method of manufacturing solid state image pickup device |
| US9508571B2 (en) | 2014-05-12 | 2016-11-29 | Canon Kabushiki Kaisha | Method for cleaning base, heat process method for semiconductor wafer, and method for manufacturing solid-state image capturing apparatus |
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