JP3190079B2 - Method for manufacturing semiconductor integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for manufacturing a semiconductor integrated circuit device, and more particularly to a technology effective when applied to heat treatment of a semiconductor wafer.

[0002]

2. Description of the Related Art A vertical furnace and a horizontal furnace are known as heat treatment apparatuses used in heat treatment steps (oxidation, diffusion, annealing, CVD, etc.) which are part of a semiconductor manufacturing process (wafer process).

The vertical furnace is a method in which semiconductor wafers placed horizontally are arranged vertically in a vertically long heat treatment tube, and the horizontal furnace is a method in which semiconductor wafers arranged vertically are arranged horizontally in a horizontally long heat treatment tube. is there. The vertical furnace has advantages such as better soaking characteristics, less generation of particles, easier wafer transfer automation, and a smaller floor space occupied by the furnace than horizontal furnaces. Is becoming the mainstream of heat treatment equipment.

Heretofore, as a typical structure of a wafer boat of a vertical furnace, a structure in which a pair of upper and lower disks are connected by three to four groove bars has been known. On each groove bar, grooves for supporting the peripheral portion of the wafer are formed at equal intervals. The groove bar is arranged on the semicircle side of the wafer circumference in order to secure insertion and withdrawal of the wafer.

However, the wafer mounted on the wafer boat as described above is in a so-called cantilever state in which only the semicircular side is supported by a groove bar, so that the remaining semicircle not supported by the groove bar. On the side, a bending moment due to the weight of the wafer is applied.

Therefore, when a high-temperature heat treatment of 1100 ° C. or more is performed in this state, a shear stress is applied to the wafer due to the bending moment and a decrease in the yield stress of the wafer itself, and thermal stress dislocations (crystal defects) occur inside the wafer. Occurs.
Particularly, in the case of a large-diameter wafer having a diameter of 8 inches or more, the bending moment easily exceeds the critical stress value due to its own weight, and therefore, a reduction in product reliability and production yield due to thermal stress dislocation becomes a serious problem.

Japanese Patent Application Laid-Open No. Sho 55-118631 discloses a wafer boat structure constituted by a plurality of horizontal support plates for supporting most of the lower surface of a wafer.

Japanese Patent Application Laid-Open No. 58-108735 discloses a wafer boat structure in which a plurality of horizontal quartz rings supporting a wafer are vertically connected by quartz connecting rods.

Japanese Unexamined Patent Publication (Kokai) No. 63-102225 discloses a wafer boat structure in which a quartz plate having a concave portion for accommodating a wafer on its upper surface is provided between connecting rods.

[0010]

However, in the wafer boat of the conventional vertical heat treatment apparatus, since the member for supporting the wafer is made of quartz, the member is thermally deformed when a high temperature heat treatment exceeding 1100 ° C. is performed. Since the relative position between the wafer mounted on the wafer boat and the wafer transfer finger is shifted, there is a problem that it is difficult to automatically transfer the wafer using the finger.

A conventional wafer boat structure designed to support the entire lower surface or most of the wafer is:
Since the diameter of the wafer support member is much larger than the diameter of the wafer, there is a problem that the heat treatment tube and the heater for accommodating the wafer boat become large.

An object of the present invention is to provide a wafer heat treatment technique capable of reducing the occurrence of thermal stress dislocation.

Another object of the present invention is to provide a technique capable of preventing thermal deformation of a wafer boat during a high-temperature heat treatment exceeding 1100 ° C.

Another object of the present invention is to provide a technique capable of reducing the size of a heat treatment apparatus.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0016]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

According to the method of manufacturing a semiconductor integrated circuit device of the present invention, the outer diameter is larger than the diameter of the semiconductor wafer to be heat-treated, and the inner diameter is smaller than the diameter of the semiconductor wafer. Inserts a semiconductor wafer to be heat-treated into the cylinder into a vertical wafer boat provided with a surface portion for holding the outer periphery of the bottom surface of the semiconductor wafer by a plurality of cuts at predetermined intervals, and mounts the semiconductor wafer on the surface portion And a step of disposing a wafer boat on which the semiconductor wafer is mounted in a heat treatment tube and heat-treating the semiconductor wafer.

In the method of manufacturing a semiconductor integrated circuit device according to the present invention, a step of implanting desired ions into a desired region of a semiconductor wafer includes the steps of: providing an outer diameter larger than the diameter of the semiconductor wafer; Forming a cylinder having a smaller wall thickness, the cylinder having a plurality of cuts at predetermined intervals provided with a surface portion for holding the outer periphery of the bottom surface of the semiconductor wafer; Inserting into the cylinder, mounting on the surface portion, placing a wafer boat on which the semiconductor wafer is mounted in a heat treatment tube, heat treating the semiconductor wafer, forming a well region in the semiconductor wafer; .

[0019]

According to the above-mentioned means, the load on the wafer is dispersed to most of the peripheral portion by supporting most of the peripheral portion of the wafer with the cylindrical portion, so that the specific region in the wafer plane can be dispersed. No large bending moment is applied. Accordingly, even when a high-temperature heat treatment of 1100 ° C. or more is performed, the occurrence of thermal stress dislocation due to the bending moment can be reliably suppressed.

According to the above means, the outer diameter of the cylindrical portion supporting the wafer is only slightly larger than the outer diameter of the wafer, so that the wafer boat can be downsized. Also,
The heat treatment tube accommodating the wafer boat and the heater outside the tube can also be reduced in size.

According to the above-mentioned means, the cylindrical portion is set to 1400
The cylindrical portion is not thermally deformed even when a high-temperature heat treatment of about 1100 to 1300 ° C. is performed by using SiC having a high thermal deformation temperature of at least 100 ° C. Thus, when removing the heat-treated wafer from the wafer boat, the relative positions of the wafer transfer fingers and the grooves do not shift, so that the transfer of the wafer can be automated.

[0022]

FIG. 3 is an overall view of a vertical heat treatment apparatus 1 according to one embodiment of the present invention. A first elevator 3 for moving the wafer boat 2 up and down is provided on a side wall of the vertical heat treatment apparatus 1.
a, and a second elevator 3b for vertically moving a transfer 4, which is an automatic wafer transfer means, are installed facing each other. Between the two elevators 3a and 3b, there is provided a wafer cassette 9 which stores a plurality of wafers 8 horizontally.

The wafer boat 2 is fixed on an elevator flange 6 while being supported by a boat support 5. On the other hand, the transfer 4 is configured to be movable in the horizontal direction, and a plurality of fingers 7 that are rotatable in a horizontal plane are mounted on an upper portion thereof. The finger 7 is provided with a mechanism for vacuum-sucking the wafer 8. The structure of the wafer boat 2 and the method for automatically transferring the wafers 8 will be described later in detail.

Above the wafer boat 2, a cylindrical heat treatment tube 10 having an open bottom is provided. The heat treatment tube 10 is made of quartz glass, and a heater 11 of a resistance heating system or a high frequency heating system is provided around the tube. The wafer boat 2 on which the wafers 8 are mounted is accommodated inside the heat treatment tube 10 by raising the elevator 3a.

FIG. 4 is a cutaway perspective view showing a part of the heat treatment tube 10 accommodating the wafer boat 2.

A gas inlet pipe 12 having an opening at the upper end and a gas discharge pipe 13 having an opening at the lower end are connected to the outer wall of the heat treatment pipe 10. Gas inlet pipe 1
The gas introduced into the inside of the heat treatment pipe 10 through the pipe 2 flows downward from above in the pipe, and is discharged outside through the gas discharge pipe 13. Although not shown, a thermometer such as a thermocouple is installed near the heat treatment tube 10.

Next, the structure of the wafer boat 2 will be described with reference to FIGS. FIG. 1 is a perspective view of the wafer boat 2 with a wafer 8 mounted thereon, and FIG. 2 is a cross-sectional view taken along line II-II of FIG.

The wafer boat 2 comprises a cylindrical portion 14 and a disc-shaped upper plate 15 and a lower plate 16 joined to the upper and lower ends thereof. The cylindrical portion 14, the upper plate 15, and the lower plate 16 are made of silicon carbide (SiC) having higher heat resistance than quartz. The heat deformation temperature of SiC is 1400 ° C. or higher.

In the cylindrical portion 14, a large number of grooves 17 (ie, notches as apparent from the drawing) for inserting and removing the wafer 8 are formed at equal intervals. Each groove 1
7 is a cylindrical portion 14 on the semicircular side for loading and unloading the wafer 8.
On the other semi-circular side, it is formed only on the inner peripheral side of the cylindrical portion 14.

The outer diameter of the cylindrical portion 14 is slightly larger than the diameter of the wafer 8, and the inner diameter is slightly smaller than the diameter of the wafer 8. Therefore, only the peripheral portion of the wafer 8 has the cylindrical portion 14.
Is mounted on the wafer boat 2 while being supported by the cross section of FIG. 1 and 2 show only one wafer 8 in order to make it easier to see the mounting state of the wafer 8.

On the semicircle side of the cylindrical portion 14 into and out of the wafer 8, a finger passing region 18 having a constant width is formed along the vertical direction. When the wafer 8 is taken in and out, the tip of the finger 7 attached to the transfer 4 is inserted into the cylindrical portion 14 through the finger passage area 18, and as shown in FIG. w) is slightly wider than the width of the finger 7.

A gas passage groove 19 having a constant width is formed on the other semicircular side of the cylindrical portion 14 along the vertical direction. The gas passage groove 19 is formed as necessary in order to make the flow of the gas introduced through the gas introduction pipe 12 of the heat treatment pipe 10 uniform.

Next, a method of manufacturing the wafer boat 2 made of SiC will be briefly described with reference to FIGS. The dimensions of each member described below are examples of dimensions of an 8-inch wafer mounting wafer boat.

First, a cylindrical portion 14, an upper plate 15 and a lower plate 16 as shown in FIG. 5 are manufactured by sintering SiC powder. The cylindrical portion 14 has an outer diameter of 210 mmφ and an inner diameter of 190 mm.
１９196 mmφ and length 850 mm. The upper plate 15 has an outer diameter of 2
The lower plate 16 has an outer diameter of 220 mmφ and a thickness of 7 mm.

The above-mentioned SiC powder is disclosed in JP-A-51-8537.
No. 4 discloses a bimodal SiC powder, that is, a powder obtained by mixing 50 parts by weight of SiC powder having a particle diameter of 8 μm or less and 50 parts by weight of SiC powder having an average particle diameter of 30 to 170 μm. By mixing and sintering such SiC powders having different particle diameters, it is possible to manufacture a sintered body having porosity and pore characteristics that are easily impregnated with silicon (Si).

Subsequently, as shown in FIG. 6, the cylindrical portion 14 is hollowed out to form a finger passage area 18 and, if necessary, a gas passage port 19, and as shown in FIG.
The upper plate 15 and the lower plate 16 are joined to both ends of the cylindrical portion 14. In order to join the upper plate 15 and the lower plate 16, a paste is formed by adding a solvent to the bimodal SiC powder, and the paste is applied to the joint, and the upper plate 15 and the lower plate 16 are temporarily attached to the cylindrical portion 14. In this state, sintering at 1500 to 1700 ° C. is performed.

Subsequently, the cylindrical portion 14, the upper plate 15 and the lower plate 16 are impregnated with Si at about 5 to 30% by weight. Since SiC has a low processing strength, it is difficult to perform fine processing as it is. However, when Si is impregnated, the processing strength is increased, so that fine processing of the groove 17 and the like is facilitated. As described in JP-A-51-85374, the impregnation with Si is performed by contacting with Si in a reducing atmosphere at about 2150 ° C.

Finally, the cylindrical portion 14 is finely processed to form grooves 17 each having a width and a pitch of 3.5 to 7.0 mm from 125 to 1.
After forming 35 pieces, the surface of the cylindrical portion 14, the upper plate 15 and the lower plate 16 is coated with a SiC film having a thickness of about 30 to 150 μm by using the CVD method, so that the above-described FIG.
The wafer boat 2 shown in FIG. 2 is completed.

Since the SiC film formed by the CVD method has a much lower impurity concentration than the SiC sintered body, the coating can reduce contamination of the wafer 8 in contact with the wafer boat 2.

Next, a method for automatically inserting the wafer 8 into the wafer boat 2 will be described with reference to FIGS.

As shown in FIG. 8, the wafer 8 to be subjected to the heat treatment is carried into the vertical heat treatment apparatus 1 in a state accommodated in the wafer cassette 9, and is placed between the pair of elevators 3a and 3b. The wafer cassette 9 accommodates one manufacturing lot (for example, 100) of wafers 8 and several monitor wafers.

First, the height of the transfer 4 is adjusted to the height of the wafer cassette 9 by driving the elevator 3b.
The finger 7 is rotated to face the front of the wafer cassette 9. Subsequently, the transfer 4 is horizontally moved to insert the finger 7 into the wafer cassette 9 and positioned below the wafer 8 to be taken out first.

Next, by driving the elevator 3b, the fingers 7 are raised to the lower surface of the wafer 8, and the wafer 8 is vacuum-sucked. Subsequently, after the fingers 7 are slightly raised again, the transfer 4 is horizontally moved to take out the wafer 8 from the wafer cassette 9, and the transfer 4 is moved to the reference height. The reference height of the transfer 4 is
Of the wafer 8 sucked into the wafer boat 2 and the height of the groove 17 for inserting the wafer 8 at the beginning of the wafer boat 2 (= wafer boat 2
(A reference height).

The height of the transfer 4 according to the height of the wafer cassette 9, the amount of rotation of the finger 7 facing the front of the wafer cassette 9, the amount of horizontal movement of the transfer 4, and the finger 7 when the wafer 8 is vacuum-sucked The ascending movement amount and the reference height of the transfer 4 are previously taught to a control unit (not shown) of the apparatus.

Next, after the pitch of the fingers 7 is adjusted to the pitch of the grooves 17 of the wafer boat 2, the fingers 7 are rotated to face the front of the wafer boat 2. The finger 7 is inserted into the wafer boat 2 by horizontally moving in the direction. As shown in FIG. 9, the fingers 7 are inserted into the wafer boat 2 through the finger passage area 18, and at this time, the wafers 8 sucked by the fingers 7 are inserted into the grooves 17.

Next, after stopping the vacuum suction of the finger 7, the elevator 3b is driven to lower the finger 7. As shown in FIG. 9, the finger 7 moves downward in the cylindrical portion 15 through the finger passage area 18.

The reference height of the transfer 4, the amount of rotation of the finger 7 to face the front of the wafer boat 2, the amount of horizontal movement of the transfer 4, and the finger 7 after stopping the vacuum suction
The amount of downward movement of the device is previously taught to the control unit of the apparatus.

By repeating the above operation, all the wafers 8 stored in the wafer cassette 9 are automatically inserted into the wafer boat 2. In this repetitive operation, the control unit of the apparatus automatically calculates and determines the insertion height of the wafer 8 that changes for each operation by determining the reference height of the wafer boat 2 and the pitch of the groove 17. .

The wafer boat 2 on which the wafer 8 is mounted
Is accommodated in the heat treatment tube 10 by raising the elevator 3a. Thereafter, the temperature of the inside of the heat treatment tube 10 is set to a predetermined temperature for a predetermined time by the temperature control by the heater 11, whereby the heat treatment of the wafer 8 is performed.

When the heat treatment of the wafer 8 is completed, the wafer 8
Is returned to the original reference height by the lowering of the elevator 3a. The processed wafers 8 mounted on the wafer boat 2 are automatically accommodated in the original wafer cassette 9 by the operation reverse to the above-mentioned operation, and are transferred to the next process.

Next, a specific example of the heat treatment of the wafer 8 using the vertical heat treatment apparatus 1 of this embodiment will be described with reference to FIGS. This heat treatment is performed by the complementary MISFET (CMO
(SFET).

First, as shown in FIG. 10, 10 [Ω /
n it has a resistance value of approximately cm] ^- after the wafer 8 made of a shape silicon single crystal was formed a silicon oxide film 20 having a thickness of about 20nm on the surface by thermal oxidation [(100) plane], using the CVD method Then, a silicon nitride film 21 having a thickness of about 50 nm is deposited on the silicon oxide film 20.

Subsequently, a photoresist film 2 having a p-channel MISFET formation region opened above silicon nitride film 21
After the silicon nitride film 21 is removed by etching using this as a mask, phosphorus (P) ions are applied to the surface of the wafer 8 in the p-channel MISFET formation region with an energy of 125 keV and 3.0 × 10 ¹³ / cm 3. Ion implantation is performed at a dose of ² .

Next, after removing the photoresist film 22 by ashing, the wafer 8 is thermally oxidized to form a film 1
A silicon oxide film 23 of about 20 nm is formed. Since the silicon nitride film 21 serves as an oxidation mask, the silicon oxide film 23
It is formed only on the surface of the wafer 8 in the region where the phosphorus ions have been implanted.

Subsequently, after the silicon oxide film having a thickness of about 5 nm formed on the surface of the silicon nitride film 23 is removed by etching with a diluted hydrofluoric acid aqueous solution, the silicon nitride film 21 is removed by etching with hot phosphoric acid. (FIG. 11).

Next, BF ₂ ions are implanted at an energy of 40 keV and at a dose of 3.0 × 10 ¹³ / cm ² . Since the silicon oxide film 23 serves as a mask for ion implantation, B
F ₂ ions are implanted only into the surface of the wafer 8 in a region where phosphorus is not implanted (FIG. 12).

Next, one manufacturing lot of the wafer 8 having undergone such processing is accommodated in the wafer cassette 9 and transferred to the vertical heat treatment apparatus 1 of the present embodiment, and is automatically transferred to the wafer boat 2 by the above-described operation. insert. The wafer boat 2 on which the wafers 8 are mounted is accommodated in the heat treatment tube 10 by raising the elevator 3a. The rising speed of the elevator 3a is about 10 cm / min.

Next, the heater 11 is operated to activate the heat treatment tube 10.
Is heated at a rate of about 8 ° C./min. At the same time, a nitrogen gas containing a trace amount of oxygen is supplied to the inside of the heat treatment tube 10 through the gas introduction tube 12. And 1200
The phosphorus ions and BF ₂ ions implanted into the wafer 8 are extended and diffused at 6 ° C. for 6 hours to form an n-well 24 and a p-well 25 (FIG. 13). The depth of each of the n-well 24 and the p-well 25 is about 4 μm, and the impurity concentration on the surface is about 5.0 × 10 ¹⁷ / cm ³ .

Next, the temperature of the heater 11 is controlled to lower the internal temperature of the heat treatment tube 10 at a rate of about 3 ° C./min. Thereafter, the wafer boat 2 returns to the original reference height by the lowering of the elevator 3a. The descending speed of the elevator 3a is about 10 cm / min. The processed wafer 8 is automatically accommodated in a wafer cassette 9 and transported to the next step.

As described above, the wafer boat 2 of this embodiment is
Since most of the peripheral portion of the wafer 8 inserted into the groove 17 is supported by the cylindrical portion 14, the load of the wafer 8 is dispersed to most of the peripheral portion and the in-plane No large bending moment is applied to a specific area. Accordingly, even when a high-temperature heat treatment of 1100 ° C. or more is performed, the occurrence of thermal stress dislocation due to the bending moment can be reliably suppressed.

Further, the wafer boat 2 of the present embodiment
Since it is made of SiC having a high thermal deformation temperature of 00 ° C. or more, even when a high-temperature heat treatment of about 1100 to 1300 ° C. is performed, the cylindrical portion 14 does not thermally deform. Thus, when taking out the heat-treated wafer 8 from the wafer boat 2, the relative positions of the fingers 7 and the grooves 17 do not shift, so that the automation of the transfer of the wafer 8 can be realized.

Further, since the wafer boat 2 of this embodiment has a structure in which the wafer 8 is supported by the cross section of the cylindrical portion 14, the outer diameter of the wafer boat 2 need only be slightly larger than the outer diameter of the wafer 8. . Accordingly, since the wafer boat 2 is reduced in size, the heat treatment tube 10 that accommodates the wafer boat 2 and the heater 11 on the outside thereof can also be reduced in size.

Although the invention made by the inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the invention. Needless to say.

Although the vertical heat treatment apparatus of the above embodiment has a structure in which a wafer boat is taken in and out from the bottom of the heat treatment tube, the present invention provides a vertical heat treatment apparatus in which a wafer boat is taken in and out from the top of the heat treatment pipe. Can also be applied.

Although the wafer boat of the above embodiment is designed to support the wafer horizontally, it is not always necessary to support the wafer horizontally accurately, and the bending moment caused by the weight of the wafer is critical stress value during high temperature heat treatment. It is acceptable to tilt the wafer slightly within a range not exceeding.

In the above embodiment, the well diffusion is described as a specific example of the heat treatment. However, the present invention is not limited to this. Various heat treatments, particularly a high-temperature heat treatment of 1100 ° C. or more (for example, LOCO
For example, the formation of a field insulating film by the S method).

In the above embodiment, the case where the vertical heat treatment apparatus of the present invention is applied to a diffusion apparatus has been described. However, the present invention is not limited to this, and various heat treatment apparatuses such as an oxidation apparatus, a CVD apparatus, and an annealing apparatus are used. Can be applied to

[0068]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1) According to one embodiment of the present invention, even when a heat treatment of a wafer is performed at a high temperature of, for example, 1100 ° C. or more, the occurrence of thermal stress dislocation due to a bending moment can be reliably suppressed. Therefore, the reliability and manufacturing yield of the semiconductor integrated circuit device can be improved.

(2) According to one embodiment of the present invention, the size of the wafer boat can be reduced, so that the heat treatment tube for accommodating the wafer boat and the heater outside thereof can be reduced in size.

(3) According to one embodiment of the present invention, even when heat treatment of a wafer is performed at a high temperature of, for example, about 1100 ° C. to 1300 ° C., the relative position between the wafer mounted on the wafer boat and the wafer transfer finger is high. Since the proper position does not shift, the transfer of the wafer can be automated.

[Brief description of the drawings]

FIG. 1 is a perspective view of a main part showing a wafer boat of a vertical heat treatment apparatus according to one embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II of FIG.

FIG. 3 is an overall view of the vertical heat treatment apparatus.

FIG. 4 is a fragmentary perspective view showing a heat treatment tube of the vertical heat treatment apparatus.

FIG. 5 is a perspective view illustrating a method for manufacturing a wafer boat.

FIG. 6 is a perspective view illustrating a method for manufacturing a wafer boat.

FIG. 7 is a perspective view illustrating a method for manufacturing a wafer boat.

FIG. 8 is an overall view of a vertical heat treatment apparatus showing an automatic wafer transfer method.

FIG. 9 is a partial perspective view of a wafer boat showing an automatic wafer transfer method.

FIG. 10 is a fragmentary cross-sectional view of a wafer showing a method for manufacturing a semiconductor integrated circuit device using this vertical heat treatment apparatus.

FIG. 11 is a fragmentary cross-sectional view of a wafer showing a method for manufacturing a semiconductor integrated circuit device using this vertical heat treatment apparatus.

FIG. 12 is a fragmentary cross-sectional view of a wafer showing a method for manufacturing a semiconductor integrated circuit device using this vertical heat treatment apparatus.

FIG. 13 is a fragmentary cross-sectional view of a wafer showing a method for manufacturing a semiconductor integrated circuit device using this vertical heat treatment apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vertical heat treatment apparatus 2 Wafer boat 3a Elevator 3b Elevator 4 Transfer 5 Boat pedestal 6 Elevator flange 7 Finger 8 Wafer 9 Wafer cassette 10 Heat treatment pipe 11 Heater 12 Gas introduction pipe 13 Gas exhaust pipe 14 Cylindrical part 15 Upper plate 16 Lower plate Reference Signs List 17 groove 18 finger passage region 19 gas passage groove 20 silicon oxide film 21 silicon nitride film 22 photoresist film 23 silicon oxide film 24 n-well 25 p-well

────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuji Kosaka 5-20-1, Kamisumihoncho, Kodaira-shi, Tokyo Inside the Musashi Plant, Hitachi, Ltd. (56) References JP-A-62-229932 (JP, A) JP-A-63-217622 (JP, A) JP-A-62-78753 (JP, U) JP-A-2-79023 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 H01L 21/22-21/24 H01L 21/31 H01L 21/365 H01L 21/38-21/40 H01L 21/469 H01L 21/68 H01L 21/86

Claims (3)

(57) [Claims] An outer diameter of a semiconductor wafer to be heat-treated.
Larger and the inner diameter is smaller than the diameter of the semiconductor wafer.
The cylinder has a large wall thickness, and the cylinder has
Holding the outer circumference of the bottom of the semiconductor wafer by cutting the number
Heat treatment on a vertical wafer boat with a surface
A semiconductor wafer to be inserted into the cylinder, and
Mounting the wafer boat on which the semiconductor wafer is mounted and a heat treatment pipe
And a step of heat-treating the semiconductor wafer in the semiconductor integrated circuit device. Wherein desired ions to a desired region of the semiconductor wafer
The outer diameter is larger than the diameter of the semiconductor wafer and the inner diameter is
Forming a cylinder having a wall thickness smaller than the diameter of the semiconductor wafer,
The cylinder has a plurality of cuts at predetermined intervals
Vertical with a surface portion that holds the outer periphery of the bottom surface of the semiconductor wafer
The semiconductor wafer is placed in the cylindrical
And loading the wafer boat on which the semiconductor wafer is mounted, into a heat treatment tube.
Heat treating the semiconductor wafer and placing the semiconductor wafer in the semiconductor wafer.
Forming a well region on a wafer. A method of manufacturing a semiconductor integrated circuit device, comprising:
Law. 3. The wafer boat is made of SiC.
3. The semiconductor integrated circuit device according to claim 1, wherein
Manufacturing method of the device.