JPH05129214A - Manufacture of semiconductor integrated circuit device and vertical thermal treatment device used for it - Google Patents

Abstract

PURPOSE:To provide a vertical thermal treatment device wherein a wafer mounted on a wafer boat is not supported in one side. CONSTITUTION:A vertical thermal treatment device wherein a groove 17 is provided for loading and unloading a wafer to a tubular part 14 whose outer diameter is slightly larger than a diameter of the wafer 8 and inner diameter is slightly smaller than a diameter of the wafer 8 and which is provided with a wafer boat 2 which is constituted to support a large part of a peripheral part of the wafer 8 inserted to the tubular part 14 through the groove 17 by a cross section of the tubular part 14.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for manufacturing a semiconductor integrated circuit device, and more particularly to a technique effectively applied to heat treatment of a semiconductor wafer.

[0002]

2. Description of the Related Art Vertical furnaces and horizontal furnaces are known as heat treatment apparatuses used in heat treatment processes (oxidation, diffusion, annealing, CVD, etc.) which are part of a semiconductor manufacturing process (wafer process).

The vertical furnace is a method of arranging horizontally placed semiconductor wafers in the vertical direction of a vertically elongated heat treatment tube, and the horizontal furnace is a method of arranging vertically oriented semiconductor wafers in the horizontal direction of a horizontally elongated heat treatment tube. is there. A vertical furnace has the advantages of superior soaking characteristics compared to a horizontal furnace, less particle generation, easy wafer transfer automation, and a smaller floor space of the furnace. , Heat treatment equipment is becoming the mainstream.

Conventionally, as a typical structure of a wafer boat of a vertical furnace, a structure in which a pair of upper and lower discs are connected by 3 to 4 groove rods has been known. Grooves that support the peripheral portion of the wafer are formed at equal intervals on each groove rod. The groove rod is arranged on the semicircular side of the wafer circumference in order to secure the insertion and the withdrawal of the wafer.

However, since the wafer mounted on the wafer boat as described above is in a so-called cantilever state in which only the semicircle side is supported by the groove rod, the remaining semicircle which is not supported by the groove rod. A bending moment due to the weight of the wafer is applied to the side.

Therefore, when high-temperature heat treatment at 1100 ° C. or higher is performed in this state, shear stress is applied to the wafer due to the bending moment and a decrease in yield stress of the wafer itself, and thermal stress dislocations (crystal defects) inside the wafer. Occurs.
In particular, in the case of a large-diameter wafer of 8 inches or more, the bending moment easily exceeds the critical stress value due to its own weight, so that reduction in product reliability and manufacturing yield due to thermal stress dislocation becomes a serious problem.

Japanese Unexamined Patent Publication No. 55-118631 discloses a wafer boat structure composed of a plurality of stages of horizontal support plates for supporting most of the lower surface of the wafer.

Japanese Unexamined Patent Publication (Kokai) No. 58-108735 discloses a wafer boat structure in which a plurality of horizontal quartz rings for supporting a wafer are vertically connected by quartz connecting rods.

Japanese Unexamined Patent Publication (Kokai) No. 63-102225 discloses a wafer boat structure in which a quartz plate having a recess for storing a wafer on its upper surface is provided between connecting rods.

[0010]

However, in the wafer boat of the conventional vertical heat treatment apparatus, since the member supporting the wafer is made of quartz, the member is thermally deformed when the high temperature heat treatment exceeding 1100 ° C. is performed. Since the relative positions of the wafers mounted on the wafer boat and the wafer transfer fingers are displaced, there is a problem that it becomes difficult to automatically transfer the wafers using the fingers.

In addition, the conventional wafer boat structure designed to support the entire lower surface of the wafer or most of the wafer is
Since the diameter of the wafer supporting member is much larger than the diameter of the wafer, there is a problem that the heat treatment tube and the heater for accommodating the wafer boat become large.

An object of the present invention is to provide a wafer heat treatment technique capable of reducing the occurrence of thermal stress dislocations.

Another object of the present invention is to provide a technique capable of preventing thermal deformation of a wafer boat during high temperature heat treatment exceeding 1100 ° C.

Another object of the present invention is to provide a technique capable of miniaturizing a heat treatment apparatus.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0016]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

(1) A groove for loading and unloading a wafer is provided in a cylindrical portion whose outer diameter is slightly larger than the diameter of the wafer and whose inner diameter is slightly smaller than the diameter of the wafer. A vertical heat treatment apparatus having a wafer boat configured to be supported by a cross section of a cylindrical portion.

(2) A vertical heat treatment apparatus in which the cylindrical portion of the wafer boat has an integral structure of SiC.

[0019]

According to the above-mentioned means, since most of the peripheral portion of the wafer is supported by the cylindrical portion, the load of the wafer is distributed to most of the peripheral portion, so that it is possible to set the specific area within the wafer surface. No large bending moment is applied. As a result, even when high-temperature heat treatment at 1100 ° C. or higher is performed, the occurrence of thermal stress dislocations due to the bending moment can be reliably suppressed.

According to the above-mentioned means, since the outer diameter of the cylindrical portion supporting the wafer is only slightly larger than the outer diameter of the wafer, the wafer boat can be downsized. Also,
The heat treatment tube for accommodating the wafer boat and the heater outside the heat treatment tube can be downsized.

According to the above-mentioned means, the cylindrical portion is
Since it is made of SiC having a high heat distortion temperature of ℃ or more, even if a high temperature heat treatment of about 1100 to 1300 ℃ is performed, the cylindrical portion is not thermally deformed. Thus, when the wafer that has been subjected to the heat treatment is taken out from the wafer boat, the relative positions of the wafer transfer fingers and the grooves do not shift, so that the wafer transfer can be automated.

[0022]

FIG. 3 is an overall view of a vertical heat treatment apparatus 1 which is an embodiment of the present invention. On the side wall of the vertical heat treatment apparatus 1, a first elevator 3 for vertically moving the wafer boat 2 is installed.
a and a second elevator 3b for vertically moving the transfer 4, which is an automatic wafer transfer means, are installed opposite to each other. A wafer cassette 9 that horizontally accommodates a plurality of wafers 8 is installed between the two elevators 3a and 3b.

The wafer boat 2 is fixed on the elevator flange 6 while being supported by the boat pedestal 5. On the other hand, the transfer 4 is configured to be movable in the horizontal direction, and a plurality of fingers 7 that are rotatable in a horizontal plane are attached to the upper portion of the transfer 4. The finger 7 is provided with a mechanism for vacuum-sucking the wafer 8. The structure of the wafer boat 2 and the automatic transfer method of the wafer 8 will be described in detail later.

A cylindrical heat treatment tube 10 having an open bottom is installed above the wafer boat 2. The heat treatment tube 10 is made of quartz glass, and a heater 11 by a resistance heating method or a high frequency heating method is installed around the heat treatment tube 10. The wafer boat 2 loaded with the wafers 8 is housed inside the heat treatment tube 10 as the elevator 3a rises.

FIG. 4 is a perspective view showing a part of the heat treatment tube 10 accommodating the wafer boat 2 in a cutaway manner.

To the outer wall of the heat treatment pipe 10, a gas introduction pipe 12 having an opening at its upper end and a gas discharge pipe 13 having an opening at its lower end are connected. Gas introduction pipe 1
The gas introduced into the heat treatment tube 10 through 2 flows from the upper side to the lower side in the tube and is discharged to the outside through the gas discharge tube 13. Although not shown, a thermometer such as a thermocouple is installed near the periphery of the heat treatment tube 10.

Next, the structure of the wafer boat 2 will be described with reference to FIGS. FIG. 1 is a perspective view of the wafer boat 2 on which a wafer 8 is mounted, and FIG. 2 is a sectional view taken along line II-II of FIG.

The wafer boat 2 comprises a cylindrical portion 14 and disc-shaped upper and lower plates 15 and 16 joined to the upper and lower ends thereof. The cylindrical portion 14, the upper plate 15, and the lower plate 16 are made of silicon carbide (SiC) having higher heat resistance than quartz. The heat distortion temperature of SiC is 1400 ° C. or higher.

A large number of grooves 17 for loading and unloading the wafer 8 are formed in the cylindrical portion 14 at equal intervals. Each of the grooves 17 is formed so as to cut the cylindrical portion 14 on the semicircular side where the wafer 8 is taken in and out, whereas it is formed only on the inner peripheral side of the cylindrical portion 14 on the other semicircular side. Has been done.

The outer diameter of the cylindrical portion 14 is slightly larger than the diameter of the wafer 8 and the inner diameter thereof is slightly smaller than the diameter of the wafer 8. Therefore, the wafer 8 has a cylindrical portion 14 only in its peripheral portion.
The wafer boat 2 is mounted on the wafer boat 2 while being supported by its cross section. In order to make it easier to see the mounted state of the wafer 8, FIGS. 1 and 2 show only one wafer 8.

A finger passage area 18 having a constant width is formed along the vertical direction on the semicircle side of the cylindrical portion 14 into which the wafer 8 is taken in and out. When the wafer 8 is taken in and out, the tips of the fingers 7 attached to the transfer 4 are inserted into the cylindrical portion 14 through the finger passage region 18, so that the width of the finger passage region 18 ( w) is slightly wider than the width of the finger 7.

A gas passage groove 19 having a constant width is formed along the vertical direction on the other semicircle side of the cylindrical portion 14. The gas passage groove 19 is formed as necessary in order to make the flow of the gas introduced through the gas introduction pipe 12 of the heat treatment pipe 10 uniform.

Next, a method of manufacturing the wafer boat 2 made of SiC will be briefly described with reference to FIGS. The dimensions of each member shown below are examples of dimensions of a wafer boat for mounting an 8-inch wafer.

First, SiC powder is sintered to manufacture the cylindrical portion 14, the upper plate 15 and the lower plate 16 as shown in FIG. 5, respectively. The cylindrical portion 14 has an outer diameter of 210 mmφ and an inner diameter of 190
It is ~ 196 mmφ and the length is 850 mm. The outer diameter of the upper plate 15 is 2
The bottom plate 16 has an outer diameter of 220 mmφ and a thickness of 7 mm.

The above-mentioned SiC powder is obtained from JP-A-51-8537.
It is a powder obtained by mixing 50 parts by weight of SiC powder having a particle size of 8 μm or less and 50 parts by weight of SiC powder having an average particle size of 30 to 170 μm. By mixing and sintering such SiC powders having different particle diameters, it is possible to manufacture a sintered body having porosity and pore characteristics that are easily impregnated with silicon (Si).

Subsequently, as shown in FIG. 6, the cylindrical portion 14 is hollowed to form a finger passage area 18 and a gas passage port 19 if necessary, and then, as shown in FIG.
The upper plate 15 and the lower plate 16 are joined to both ends of the cylindrical portion 14. To join the upper plate 15 and the lower plate 16, a solvent is added to the above-mentioned dimorphic SiC powder to form a paste, and the paste is applied to the joint portion, and the upper plate 15 and the lower plate 16 are temporarily attached to the cylindrical portion 14. In this state, sintering is performed at 1500 to 1700 ° C.

Subsequently, the cylindrical portion 14, the upper plate 15 and the lower plate 16 are impregnated with Si in an amount of about 5 to 30% by weight. Since SiC has a low processing strength, it is difficult to perform fine processing as it is, but since impregnating Si increases the processing strength, fine processing of the groove 18 and the like becomes easy. Impregnation of Si is carried out by contacting with Si in a reducing atmosphere at about 2150 ° C. as described in JP-A-51-85374.

Finally, the cylindrical portion 14 is microfabricated to form grooves 17 having a width and a pitch of 3.5 to 7.0 mm, respectively.
After forming 35 pieces, by coating the surface of the cylindrical portion 14, the upper plate 15 and the lower plate 16 with a SiC film having a film thickness of about 30 to 150 μm by using the CVD method, as shown in FIG.
The wafer boat 2 shown in FIG. 2 is completed.

Since the SiC film formed by the CVD method has a much lower impurity concentration than the SiC sintered body, the above-mentioned coating can reduce the contamination of the wafer 8 in contact with the wafer boat 2.

Next, a method for automatically inserting the wafer 8 into the wafer boat 2 will be described with reference to FIGS.

As shown in FIG. 8, the wafer 8 to be subjected to the heat treatment is loaded into the vertical heat treatment apparatus 1 while being accommodated in the wafer cassette 9, and is installed between the pair of elevators 3a and 3b. The wafer cassette 9 accommodates one manufacturing lot (for example, 100 wafers) 8 and several monitor wafers.

First, after the elevator 3b is driven to adjust the height of the transfer 4 to the height of the wafer cassette 9,
The finger 7 is rotated so that the front surface of the wafer cassette 9 is formed. Then, the transfer 4 is horizontally moved to insert the finger 7 into the wafer cassette 9 and positioned below the wafer 8 to be taken out first.

Next, by driving the elevator 3b, the fingers 7 are raised to the lower surface of the wafer 8 and the wafer 8 is vacuum-sucked. Then, after the fingers 7 are slightly raised again, the transfer 4 is horizontally moved to take out the wafer 8 from the wafer cassette 9 and move the transfer 4 to the reference height. The reference height of the transfer 4 is the finger 7
The height of the wafer 8 adsorbed on the wafer boat 2 and the height of the groove 17 into which the wafer 8 is inserted at the beginning of the wafer boat 2 (= wafer boat 2
The reference height) is the same height.

The height of the transfer 4 in accordance with the height of the wafer cassette 9, the amount of rotation for forming the finger 7 in front of the wafer cassette 9, the amount of horizontal movement of the transfer 4, and the finger 7 for vacuum suction of the wafer 8. The amount of ascending movement and the reference height of the transfer 4 are taught in advance to a control unit (not shown) of the apparatus.

Next, after the pitch of the fingers 7 is adjusted to the pitch of the grooves 17 of the wafer boat 2, the fingers 7 are rotated to make the front surface of the wafer boat 2 actually exist, and subsequently, the transfer 4 is directed toward the wafer boat 2. Then, the finger 7 is inserted into the wafer boat 2 by horizontally moving it. As shown in FIG. 9, the finger 7 is inserted into the wafer boat 2 through the finger passage area 18, and at the same time, the wafer 8 sucked by the finger 7 is inserted into the groove 17.

Next, after the vacuum suction of the fingers 7 is stopped, the elevator 3b is driven to lower the fingers 7. As shown in FIG. 9, the finger 7 moves downward in the cylindrical portion 15 through the finger passage area 18.

The reference height of the transfer 4, the amount of rotation for forming the finger 7 in front of the wafer boat 2, the amount of horizontal movement of the transfer 4, the finger 7 after the vacuum suction is stopped.
The amount of downward movement of the device should be taught in advance to the controller of the device.

By repeating the above operation, all the wafers 8 accommodated in the wafer cassette 9 are automatically inserted into the wafer boat 2. In this repetitive operation, the insertion height of the wafer 8 which changes with each operation is automatically determined by the control unit of the apparatus by determining the reference height of the wafer boat 2 and the pitch of the grooves 17. ..

The wafer boat 2 carrying the wafer 8 thereon.
Are accommodated inside the heat treatment tube 10 by the rise of the elevator 3a. Thereafter, the temperature of the heater 11 is controlled to set the inside of the heat treatment tube 10 to a predetermined temperature for a predetermined time, so that the heat treatment of the wafer 8 is performed.

When the heat treatment of the wafer 8 is completed, the wafer 8
The wafer boat 2 loaded with is returned to the original reference height by the descent of the elevator 3a. The processed wafers 8 mounted on the wafer boat 2 are automatically stored in the original wafer cassette 9 by the reverse operation of the above-described operation, and are transferred to the next process.

Next, a specific example of heat treatment of the wafer 8 using the vertical heat treatment apparatus 1 of this embodiment will be described with reference to FIGS. This heat treatment is applied to the complementary MISFET (CMO
SFET) well diffusion.

First, as shown in FIG. 10, 10 [Ω /
The wafer 8 made of n ⁻ -type silicon single crystal having a resistance value of about [cm] is thermally oxidized to form a silicon oxide film 20 having a film thickness of about 20 nm on the surface [(100) plane], and then the CVD method is used. Then, a silicon nitride film 21 having a film thickness of about 50 nm is deposited on the silicon oxide film 20.

Subsequently, a photoresist film 2 having a p-channel MISFET formation region opened above the silicon nitride film 21.
2 is removed and the silicon nitride film 21 is removed by etching using this as a mask. Then, phosphorus (P) ions are applied to the surface of the wafer 8 in the p-channel MISFET formation region at an energy of 125 keV and 3.0 × 10 ¹³ / cm 3. Ion implantation is performed at a dose of ² .

Next, after removing the photoresist film 22 by ashing, the wafer 8 is thermally oxidized to have a film thickness of 1
A silicon oxide film 23 having a thickness of about 20 nm is formed. Since the silicon nitride film 21 serves as an oxidation mask, the silicon oxide film 23 is
It is formed only on the surface of the wafer 8 in the region where phosphorus ions are implanted.

Subsequently, the silicon oxide film having a thickness of about 5 nm formed on the surface of the silicon nitride film 23 is removed by etching with a dilute hydrofluoric acid solution, and then the silicon nitride film 21 is removed by etching with hot phosphoric acid. (FIG. 11).

Next, BF ₂ ions are ion-implanted at an energy of 40 keV and a dose of 3.0 × 10 ¹³ / cm ² . Since the silicon oxide film 23 serves as a mask for ion implantation, B
F ₂ ions are implanted only into the surface of the wafer 8 in the region where phosphorus is not implanted (FIG. 12).

Next, one manufacturing lot of the wafers 8 which have been subjected to the above-mentioned processing is accommodated in the wafer cassette 9 and transferred to the vertical heat treatment apparatus 1 of this embodiment, and is automatically transferred to the wafer boat 2 by the above-mentioned operation. insert. The wafer boat 2 loaded with the wafers 8 is housed inside the heat treatment tube 10 by the elevation of the elevator 3a. The rising speed of the elevator 3a is about 10 cm / min.

Next, the heater 11 is operated to activate the heat treatment tube 10.
The inside of is heated at a rate of about 8 ° C./min. At the same time, nitrogen gas containing a small amount of oxygen is supplied into the heat treatment tube 10 through the gas introduction tube 12. And 1200
Phosphorus ions and BF ₂ ions implanted in the wafer 8 are stretched and diffused under the condition of 6 ° C. for 6 hours to form an n well 24 and a p well 25 (FIG. 13). The depths of the n well 24 and the p well 25 are both about 4 μm, and the surface impurity concentration is about 5.0 × 10 ¹⁷ / cm ³ .

Next, the temperature of the heater 11 is controlled to lower the internal temperature of the heat treatment tube 10 at a rate of about 3 ° C./minute. After that, the wafer boat 2 returns to the original reference height by descending the elevator 3a. The descending speed of the elevator 3a is about 10 cm / min. The processed wafer 8 is automatically accommodated in the wafer cassette 9 and transferred to the next step.

As described above, the wafer boat 2 of this embodiment
Has a structure in which most of the peripheral portion of the wafer 8 inserted into the groove 17 is supported by the cylindrical portion 14, so that the load of the wafer 8 is distributed to most of the peripheral portion and the in-plane No large bending moment is applied to a specific area. As a result, even when high-temperature heat treatment at 1100 ° C. or higher is performed, the occurrence of thermal stress dislocations due to the bending moment can be reliably suppressed.

Further, the wafer boat 2 of this embodiment has 14
Since it is made of SiC having a high heat deformation temperature of 00 ° C. or higher, the cylindrical portion 14 is not thermally deformed even when the high temperature heat treatment of about 1100 to 1300 ° C. is performed. As a result, when the wafer 8 that has undergone the heat treatment is taken out from the wafer boat 2, the relative positions of the fingers 7 and the grooves 17 do not shift, so that the transfer of the wafer 8 can be automated.

Further, since the wafer boat 2 of the present embodiment has a structure in which the wafer 8 is supported by the cross section of the cylindrical portion 14, the outer diameter thereof may be slightly larger than the outer diameter of the wafer 8. .. As a result, the wafer boat 2 is downsized, so that the heat treatment tube 10 for accommodating the wafer boat 2 and the heater 11 outside thereof can be downsized.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

The vertical heat treatment apparatus of the above embodiment has a structure in which the wafer boat is taken in and out from the bottom of the heat treatment tube, but the present invention is a vertical heat treatment apparatus having a structure in which the wafer boat is taken in and out from the upper portion of the heat treatment tube. Can also be applied to.

The wafer boat of the above embodiment is designed to support the wafer horizontally, but it is not always necessary to support the wafer horizontally accurately, and the bending moment due to the weight of the wafer is critical stress value during high temperature heat treatment. It does not matter to incline the wafer to some extent within a range not exceeding the range.

Although the well diffusion has been described as a specific example of the heat treatment in the above-mentioned embodiment, it is not limited to this, and various heat treatments, particularly high temperature heat treatment at 1100 ° C. or higher (eg LOCO).
It can be widely applied to the formation of a field insulating film by the S method).

In the above embodiments, the case where the vertical heat treatment apparatus of the present invention is applied to the diffusion apparatus has been described, but the present invention is not limited to this, and various heat treatment apparatuses such as an oxidation apparatus, a CVD apparatus, an annealing apparatus, etc. Can be applied to.

[0068]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

(1) According to the vertical heat treatment apparatus of the present invention, 1
Even when the heat treatment of the wafer is performed at a high temperature of 100 ° C. or higher, the generation of thermal stress dislocations due to the bending moment can be surely suppressed, so that the reliability and the manufacturing yield of the semiconductor integrated circuit device can be improved. it can.

(2) According to the vertical heat treatment apparatus of the present invention, the wafer boat can be downsized, so that the heat treatment tube for accommodating the wafer boat and the heater outside thereof can be downsized.

(3) According to the vertical heat treatment apparatus of the present invention, 1
Even when the wafer is heat-treated at a high temperature of about 100 to 1300 ° C., the relative position between the wafer mounted on the wafer boat and the wafer transfer finger does not shift.
The wafer transfer can be automated.

[Brief description of drawings]

FIG. 1 is a perspective view of essential parts showing a wafer boat of a vertical heat treatment apparatus according to an embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

FIG. 3 is an overall view of this vertical heat treatment apparatus.

FIG. 4 is a fragmentary perspective view showing a heat treatment tube of the vertical heat treatment apparatus.

FIG. 5 is a perspective view showing a method of manufacturing a wafer boat.

FIG. 6 is a perspective view showing a method of manufacturing a wafer boat.

FIG. 7 is a perspective view showing a method of manufacturing a wafer boat.

FIG. 8 is an overall view of a vertical heat treatment apparatus showing an automatic wafer transfer method.

FIG. 9 is a partial perspective view of a wafer boat showing an automatic wafer transfer method.

FIG. 10 is a fragmentary cross-sectional view of a wafer showing a method for manufacturing a semiconductor integrated circuit device using this vertical heat treatment apparatus.

FIG. 11 is a cross-sectional view of essential parts of a wafer, showing a method for manufacturing a semiconductor integrated circuit device using this vertical heat treatment apparatus.

FIG. 12 is a fragmentary cross-sectional view of a wafer showing a method for manufacturing a semiconductor integrated circuit device using this vertical heat treatment apparatus.

FIG. 13 is a cross-sectional view of essential parts of a wafer, showing a method for manufacturing a semiconductor integrated circuit device using this vertical heat treatment apparatus.

[Explanation of symbols]

 1 Vertical heat treatment apparatus 2 Wafer boat 3a Elevator 3b Elevator 4 Transfer 5 Boat cradle 6 Elevator flange 7 Fingers 8 Wafer 9 Wafer cassette 10 Heat treatment pipe 11 Heater 12 Gas inlet pipe 13 Gas discharge pipe 14 Cylindrical part 15 Upper plate 16 Lower plate 17 groove 18 finger passage region 19 gas passage groove 20 silicon oxide film 21 silicon nitride film 22 photoresist film 23 silicon oxide film 24 n-well 25 p-well

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁵ Identification number Internal reference number for FI Technical indication H01L 21/324 D 8617-4M (72) Inventor Yuji Kosaka 5-20, Kamimizumoto-cho, Kodaira-shi, Tokyo No. 1 stock company Hitachi Ltd. Musashi factory

Claims (7)

[Claims] 1. A groove for loading and unloading the semiconductor wafer is provided in a cylindrical portion having an outer diameter slightly larger than the diameter of the semiconductor wafer and an inner diameter slightly smaller than the diameter of the semiconductor wafer, and the groove is inserted through the groove. A step of performing a heat treatment using a vertical heat treatment apparatus having a wafer boat configured to support the peripheral portion of the semiconductor wafer inserted in the cylindrical portion by the cross section of the cylindrical portion. Manufacturing method of semiconductor integrated circuit device. 2. The method for manufacturing a semiconductor integrated circuit device according to claim 1, wherein the heat treatment temperature is 1100 to 1300 ° C. 3. A groove for loading and unloading the semiconductor wafer is provided in a cylindrical portion having an outer diameter slightly larger than the diameter of the semiconductor wafer and an inner diameter slightly smaller than the diameter of the semiconductor wafer, and the groove is inserted through the groove. A vertical heat treatment apparatus comprising a wafer boat configured to support a majority of a peripheral portion of the semiconductor wafer inserted in a cylindrical portion with a cross section of the cylindrical portion. 4. The vertical heat treatment apparatus according to claim 3, wherein the cylindrical portion has an integral structure of silicon carbide. 5. The vertical heat treatment apparatus according to claim 4, wherein silicon carbide is impregnated with 5 to 30% by weight of silicon. 6. The vertical heat treatment apparatus according to claim 3, wherein the cylindrical portion is provided with a passage area for the fingers for wafer transfer. 7. The vertical heat treatment apparatus according to claim 3, wherein a gas passage groove is provided in the cylindrical portion.