JPH03249936A - Sealing device - Google Patents
Sealing deviceInfo
- Publication number
- JPH03249936A JPH03249936A JP2045211A JP4521190A JPH03249936A JP H03249936 A JPH03249936 A JP H03249936A JP 2045211 A JP2045211 A JP 2045211A JP 4521190 A JP4521190 A JP 4521190A JP H03249936 A JPH03249936 A JP H03249936A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- evacuated
- vessel
- gas flow
- manifold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 16
- 239000007789 gas Substances 0.000 abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Landscapes
- Furnace Housings, Linings, Walls, And Ceilings (AREA)
- Furnace Details (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は封止装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a sealing device.
（従来の技術）
一般の熱処理装置において、真空ポンプにより排気され
る処理容器の開口端とこの開口端を塞ぐ蓋体の間にＯリ
ングを配置し、上記処理容器の気密を保持する方法が広
く用いられている。(Prior Art) In general heat treatment equipment, a widely used method is to place an O-ring between the open end of a processing container that is evacuated by a vacuum pump and a lid that closes this open end to maintain the airtightness of the processing container. It is used.
また、スプリングを内蔵したフッ素樹脂材を用いた複数
のシール部と、このシール部は同軸的に平行に配置した
複数の溝部を設けこの溝部を真空排気してシールするも
のとして、 ”Ｄｅｓｉｇｈ ｐａｒａｍｅｔｅｒｓ
ｆｏｒ ｄｊ、ｆｆｅｒｅｎｔｉａｌｌｙ ｐｕｍｐ
ｅｄ ｒｏｔａｔｉｎｇ ｐｌａｔｆｏｒｉ＋ｓ”
、 Ｒｅｖ、Ｓｃｉ、 工ｎｓｔｒｕｍ、 ５８
■、 Ｆｅ１）ｒｕａｒｙ１９８７ Ｐ２Ｏ３，Ｐ３
１０がある。In addition, a plurality of seal parts using a fluororesin material with a built-in spring and a plurality of groove parts arranged coaxially and parallel to each other are provided, and the groove parts are evacuated and sealed.
for dj, fferentially pump
ed rotating platform+s”
, Rev, Sci, Engstrum, 58
■, Fe1) ruary1987 P2O3, P3
There are 10.
（発明が解決しようとする課題）
０リングをシール部材として用いた場合、このＯリング
は柔軟な部材でフッ素ゴム等からなるもので一般に耐熱
温度が２００℃前後であり、熱処理装置においてシール
部がこの温度以上になると０リングが溶けて変形し所望
の真空シール効果が得られなくなるという改善点を有す
る。また、熱処理装置を停止してＯリングを交換する場
合、この０リングが冷えてシール部に固着して取りはず
しが困難になり、時には処理容器を構成する石英チュー
ブ等を取りはずす時、この石英チューブを破損してしま
うという改善点を有する。(Problem to be Solved by the Invention) When an O-ring is used as a sealing member, this O-ring is a flexible member made of fluororubber, etc., and generally has a heat resistance temperature of around 200°C, and the sealing part may be damaged in a heat treatment device. An improvement is that when the temperature exceeds this temperature, the O-ring melts and deforms, making it impossible to obtain the desired vacuum sealing effect. In addition, when the heat treatment equipment is stopped and the O-ring is replaced, the O-ring cools down and sticks to the sealing part, making it difficult to remove. There is an improvement point in that it can be damaged.
さらに０リング内に含まれているガスや水分の放出があ
り、この放出量は圧力９時間、温度によって変化し、か
かる０リングをシール部材とした処理容器を用いて被処
理体の熱処理を行った場合、所定の圧力になった後さら
に多大な時間をかけて真空引きを行いＯリングからガス
や含有水分を十分放出させてからでないと処理ロフト間
に大きなバラツキが発生するという改善点を有する。Furthermore, gas and moisture contained in the O-ring are released, and the amount of this release varies depending on the pressure and temperature for 9 hours. In this case, there is an improvement in that large variations will occur between processing lofts unless the O-ring is sufficiently released by evacuation, which takes a considerable amount of time after the predetermined pressure is reached. .
また、モノシラン（Ｓｉ）Ｉｓ ）等の処理ガスを用い
て被処理体の自然酸化膜を除去する還元熱処理では、真
空ポンプにより十分排気を行ってもＯリングからガスや
含有水分の放出が無視できず、所望の還元熱処理が行え
ないという改善点を有する。In addition, in reduction heat treatment that uses a processing gas such as monosilane (Si)Is to remove the natural oxide film of the object to be treated, the release of gas and moisture from the O-ring can be ignored even if sufficient exhaust is performed with a vacuum pump. First, there is an improvement point in that the desired reduction heat treatment cannot be performed.
次に上記文献に示した技術ではシール部材としてフッ素
樹脂を用いているため耐熱温度が２００℃前後であり、
熱処理装置においてシール部がこの温度以上になる場合
、上記と同様の改善点を有する。Next, the technology shown in the above document uses fluororesin as the sealing member, so the heat resistance temperature is around 200°C.
When the temperature of the sealed portion in the heat treatment apparatus exceeds this temperature, improvements similar to those described above are obtained.
（発明の目的）
この発明は上記点に鑑みなされたもので、容器内に不用
な大気中の酸素や水分が混入しないような封止を行う封
止装置を提供するものである。(Object of the Invention) The present invention was made in view of the above points, and provides a sealing device that performs sealing to prevent unnecessary atmospheric oxygen and moisture from entering the container.
（課題を解決するための手段）
この発明は容器内が所定の圧力に排気される容器の封止
装置において、上記容器のシール対向部に複数の溝部を
設け、この溝部の少なくとも一つの溝は真空に排気し、
この真空に排気した外側の溝は予め定められたガス流も
し、くは一定圧のガス流を設けたものである。(Means for Solving the Problems) The present invention provides a sealing device for a container in which the inside of the container is evacuated to a predetermined pressure, in which a plurality of grooves are provided in the seal facing portion of the container, and at least one of the grooves is Evacuate to vacuum,
This evacuated outer groove is provided with a predetermined gas flow or a constant pressure gas flow.
（実 施 例）
以下、本発明装置をバッチ式縦型熱処理装置に適用した
一実施例について図面を参照して具体的に説明する。(Example) Hereinafter, an example in which the apparatus of the present invention is applied to a batch type vertical heat treatment apparatus will be specifically described with reference to the drawings.
第１図において縦型のプロセスチューブ１０は耐熱性材
料例えば石英チューブからなり、このチューブの下部に
はマニホールド２０を設置し、マニホールドの一端には
ガス導入管２６を接続し、他端側には排気管２８を接続
し図示しない排気ポンプによりプロセスチューブ１０内
を真空排気できるようにしである。In FIG. 1, a vertical process tube 10 is made of a heat-resistant material, such as a quartz tube. A manifold 20 is installed at the bottom of this tube, a gas introduction pipe 26 is connected to one end of the manifold, and a gas introduction pipe 26 is connected to the other end. An exhaust pipe 28 is connected so that the inside of the process tube 10 can be evacuated by an exhaust pump (not shown).
プロセスチューブ１０の周囲には少なくとも３ゾーン構
成からなる円筒状の抵抗加熱ヒータ１６を設け、上記プ
ロセスチューブ１０内を所望の温度例えば５００〜１２
００℃の範囲に適宜設定可能としている。A cylindrical resistance heater 16 having at least three zones is provided around the process tube 10 to maintain the inside of the process tube 10 at a desired temperature, e.g.
The temperature can be set appropriately within the range of 00°C.
上記プロセスチューブ１０内には被処理体として多数枚
のウェハ１８を例えば石英製のウェハボート１７上に水
平に収容し、このボート１７を載置台１２上に設置し、
この設置台１２を蓋体４０に設置して収納している。In the process tube 10, a large number of wafers 18 as objects to be processed are horizontally accommodated on a wafer boat 17 made of, for example, quartz, and the boat 17 is placed on a mounting table 12.
This installation stand 12 is installed and stored in the lid body 40.
この蓋体４０は昇降機構５０により上下移動することが
でき、プロセスチューブ内の予め定められた位置にウェ
ハ１８を搬入搬出可能な如く構成している。This lid body 40 can be moved up and down by a lifting mechanism 50, and is configured so that the wafer 18 can be carried in and out of a predetermined position within the process tube.
上記蓋体４０と当接するマニホールド２０の下部間口端
部２２シール機構の詳細については第２図を参照して説
明する。Details of the sealing mechanism of the lower opening end 22 of the manifold 20 that comes into contact with the lid 40 will be described with reference to FIG. 2.
蓋体４０と当接するマニホールド２０の開口端部２２、
下端部分に環状の溝部３０．３２．３４を設け、溝部３
０゜３２には排気孔３１．３３を連結し図示しない真空
ポンプにより排気可能としている。an open end 22 of the manifold 20 that abuts the lid 40;
An annular groove 30, 32, 34 is provided in the lower end portion, and the groove 3
Exhaust holes 31 and 33 are connected to the 0° 32 and can be evacuated by a vacuum pump (not shown).
溝部３４にはガス導入孔３５を接続し図示しないガス供
給源からガス流量もしくはガス圧調整器を介し窒素ガス
を供給可能としている。A gas introduction hole 35 is connected to the groove 34 so that nitrogen gas can be supplied from a gas supply source (not shown) via a gas flow rate or gas pressure regulator.
マニホールド２０と蓋体４０はステンレススチール等の
耐食性金属で構成してあり、開口部２２の下端部３６．
３７．３８．３９面は研削加工を施こし表面粗さ±２．
ｃｍ以下で、下端部３６．３７．３８．３９面が形成す
る全平面内において平面度が±５−以下としている。The manifold 20 and the lid 40 are made of a corrosion-resistant metal such as stainless steel, and the lower end 36 of the opening 22.
37, 38, and 39 surfaces are ground to a surface roughness of ±2.
cm or less, and the flatness is ±5- or less within the entire plane formed by the lower end 36, 37, 38, and 39 surfaces.
マニホールド２０と当接する蓋体４０の外周面４２の表
面粗さは±２−以下であり、上記と同様の平面度は±５
−以下としている。The surface roughness of the outer circumferential surface 42 of the lid body 40 that comes into contact with the manifold 20 is ±2- or less, and the flatness similar to the above is ±5.
-The following is stated.
上記精密加工を施こす時の加工時の研削跡は、マニホー
ルド２０および蓋体４０の中心から同心円的に形成され
るようにしている。Grinding marks during the precision machining are formed concentrically from the centers of the manifold 20 and the lid 40.
次に上記実施例装置の作用について説明する。Next, the operation of the apparatus of the above embodiment will be explained.
ヒータ１６によりプロセスチューブ１０内の均熱領域の
温度を例えば１０００℃の温度に設定し、昇降機構５０
を上方へ移動しマニホールド２０と蓋体４０が当接され
た状態に設定する。The temperature of the soaking area in the process tube 10 is set to, for example, 1000° C. by the heater 16, and the lifting mechanism 50
is moved upward so that the manifold 20 and the lid 40 are in contact with each other.
ガス導入管２６へ供給する処理ガスを止めた状態で、排
気管２８より図示しない排気ポンプでプロセスチューブ
１０内の排気を行う。With the processing gas supplied to the gas introduction pipe 26 being stopped, the inside of the process tube 10 is evacuated from the exhaust pipe 28 using an exhaust pump (not shown).
さらに、溝部３０．３２に連結された排気孔３１．３３
より図示しない真空ポンプにより排気を行う。Additionally, an exhaust hole 31.33 connected to the groove 30.32.
Evacuation is performed using a vacuum pump (not shown).
溝部３４に連結された導入孔３５へ窒素ガスを供給する
とこの溝部３４内に収容されていた空気は蓋体４０の外
周面４２とマニホールド２０の下端部３６．３７の間隙
より押し出され、溝部３４内は窒素ガスで満された状態
となる。When nitrogen gas is supplied to the introduction hole 35 connected to the groove 34 , the air contained in the groove 34 is pushed out from the gap between the outer peripheral surface 42 of the lid 40 and the lower end 36 , 37 of the manifold 20 , and the air is forced out of the groove 34 . The inside is filled with nitrogen gas.
この時溝部３４内の圧力は、ガス流量もしくはガス圧調
整器の調整により、加圧状態もしくは減圧状態のいづれ
にも設定することができる。At this time, the pressure within the groove portion 34 can be set to either a pressurized state or a depressurized state by adjusting the gas flow rate or the gas pressure regulator.
上記外周面４２と下端部３７の間隙より排出した窒素ガ
スは、溝部３２に接続された真空ポンプにより真空排気
され、この溝部３２の圧力はＩ Ｔｏｒｒ前後となり、
同様にして真空排気された溝部３０の圧力は０．０ＩＴ
ｏｒｒ前後となり、プロセスチューブ１０内の圧力はＩ
Ｘ １０−’Ｔｏｒｒ前後となった。The nitrogen gas discharged from the gap between the outer circumferential surface 42 and the lower end 37 is evacuated by a vacuum pump connected to the groove 32, and the pressure in the groove 32 is around I Torr.
The pressure in the groove 30 that was evacuated in the same way was 0.0IT.
orr, and the pressure inside the process tube 10 is I
It was around X 10-'Torr.
この状態でガス導入管２６を介してモノシラン（Ｓｉ）
Ｉ４）ガスを所要量供給し、被処理体であるシリコンウ
ェハ１８上に形成された自然酸化膜を還元処理行った結
果良好な所望の処理が行えた。In this state, monosilane (Si) is introduced through the gas introduction pipe 26.
I4) By supplying the required amount of gas, the natural oxide film formed on the silicon wafer 18, which is the object to be processed, was reduced, and as a result, a good desired process was achieved.
以上説明したように、マニホールド２０と蓋体４０のシ
ール部は窒素ガスにより空気を除去した後差動排気を行
っているのでプロセスチューブ１０内に空気中の酸素や
水分が入り込むことがない、また、Ｏリングを使用して
いないシール部であるためＯリングからの放出ガスや水
分がなく所望の圧力に短時間で到達することができるし
、０リングが使用できない２００℃以上の高い温度での
シールを行うことができる。また、マニホールド２０の
下端部２２に設けた溝部の数を増やせばプロセスチュー
ブ１０内をさらに低い圧力にすることができる。As explained above, the seals between the manifold 20 and the lid 40 are differentially pumped after removing air with nitrogen gas, so that oxygen and moisture in the air do not enter the process tube 10. Since the seal part does not use an O-ring, the desired pressure can be reached in a short time without the release of gas or moisture from the O-ring, and it can be used at temperatures above 200°C where an O-ring cannot be used. Seal can be done. Further, by increasing the number of grooves provided in the lower end portion 22 of the manifold 20, the pressure inside the process tube 10 can be lowered even further.
他の実施例としては第３図のようにマニホールド２０の
下部開口端部２２と対向する蓋体４０の外周面４２を内
側に傾斜させたものがある。第１図と同一部分と同一番
号を図示し説明を省略する。In another embodiment, as shown in FIG. 3, the outer circumferential surface 42 of the lid 40 facing the lower open end 22 of the manifold 20 is inclined inward. The same parts and numbers as in FIG. 1 are shown and their explanations will be omitted.
この蓋体４０はプロセスチューブＩＯ内が真空に引かれ
た場合大気圧により１ｋｇ／ｄの圧力で押され。This lid body 40 is pressed under a pressure of 1 kg/d by atmospheric pressure when the inside of the process tube IO is evacuated.
蓋体中央部がプロセスチューブ側へ変形することと、ヒ
ータ１６により加熱され蓋体４０の上面と下面で温度差
が付き、蓋体４０が上記と同様の方向に変形する。従っ
て蓋体４０の外周面４２に傾斜が付いた状態でこの外周
面４２とマニホールド２０の下端部３６〜３９の面が平
行になるものである。The central portion of the lid 40 deforms toward the process tube and is heated by the heater 16 to create a temperature difference between the top and bottom surfaces of the lid 40, causing the lid 40 to deform in the same direction as described above. Therefore, while the outer peripheral surface 42 of the lid body 40 is inclined, this outer peripheral surface 42 and the surfaces of the lower ends 36 to 39 of the manifold 20 are parallel to each other.
この傾斜角度θは蓋体の大きさ、厚さ、材質、ヒータ１
６の温度等によって異なるので所要作動時に適宜上記両
面が平行になるよう傾斜角度を設定するものとする。This inclination angle θ is determined by the size, thickness, material, and heater 1 of the lid.
Since the angle of inclination varies depending on the temperature, etc. of 6, the angle of inclination shall be appropriately set so that the above-mentioned surfaces are parallel to each other during the required operation.
上記傾斜角度を付けた場合の一例を上げれば、蓋体の直
径が３００＠鳳、厚さ１２■、材質ステンレススチール
５ＵＳ３０４のものを用い、ヒータの温度を１０００℃
とした場合最適な傾斜角度θは０．０１〜０．１度の範
囲である。To give an example of a case where the above inclination angle is applied, the diameter of the lid body is 300 mm, the thickness is 12 mm, the material is stainless steel 5US304, and the temperature of the heater is set to 1000 degrees Celsius.
In this case, the optimum inclination angle θ is in the range of 0.01 to 0.1 degree.
また他の実施例として第４図のようにプロセスチューブ
１０の下端縁１１とマニホールド２０の上端部２４の当
接部に本発明にかかる技術を応用したものである。As another embodiment, the technology according to the present invention is applied to the abutting portion between the lower edge 11 of the process tube 10 and the upper end 24 of the manifold 20, as shown in FIG.
プロセスチューブ１０と当接するマニホールド２０の上
部開口端部２４の上端面部分に環状溝部６０．６２゜６
４を設け、溝部６０．６２には排気孔６１．６３を連結
し図示しない真空ポンプにより排気可能としている。An annular groove 60.62°6 is formed in the upper end surface portion of the upper open end 24 of the manifold 20 that comes into contact with the process tube 10.
4, and exhaust holes 61, 63 are connected to the grooves 60, 62 to enable exhaust by a vacuum pump (not shown).
溝部６４にはガス導入孔６５を接続し図示しないガス供
給源からガス流量もしくはガス圧調整器を介し不活性ガ
ス例えば窒素ガスを供給可能としている。A gas introduction hole 65 is connected to the groove 64 so that an inert gas such as nitrogen gas can be supplied from a gas supply source (not shown) via a gas flow rate or gas pressure regulator.
マニホールド２０の上端部６６、６７、６８．６９面の
加工精度は前記実施例と同様としている。The machining accuracy of the upper end portions 66, 67, 68, and 69 surfaces of the manifold 20 is the same as in the previous embodiment.
マニホールド２０と当接するプロセスチューブ１０の下
端縁１１、下端面部分１１ａの表面粗さは±２−以下で
あり、平面度は±５−以下としている。The surface roughness of the lower end edge 11 and the lower end surface portion 11a of the process tube 10 that come into contact with the manifold 20 is ±2- or less, and the flatness is ±5- or less.
プロセスチューブ１０をヒータ１６により例えば１００
０℃に加熱した場合、プロセスチューブ１０の下端縁１
１の温度は３００℃前後となり、 このような使用条件
では本発明を用いることにより初めて真空封止可能とな
る。For example, the process tube 10 is
When heated to 0°C, the lower edge 1 of the process tube 10
The temperature of No. 1 is around 300°C, and under such usage conditions, vacuum sealing becomes possible for the first time by using the present invention.
また第２図〜第４図の実施例において、真空ポンプを最
外周溝部に接続しこの溝部を真空排気し、３つの溝部を
全て真空排気しても良い、この時の圧力は最外周溝部で
Ｉ Ｔｏｒｒ前後、中間溝部で０．０５Ｔｏｒｒ前後、
最内周溝部で０．００５Ｔｏｒｒ前後となりプロセスチ
ューブ１０内の圧力は５ Ｘ １０−’Ｔｏｒｒ前後と
なった。Furthermore, in the embodiments shown in Figures 2 to 4, a vacuum pump may be connected to the outermost groove to evacuate this groove, and all three grooves may be evacuated. I Torr before and after, around 0.05 Torr at the middle groove part,
The pressure inside the process tube 10 was approximately 0.005 Torr at the innermost circumferential groove portion, and the pressure within the process tube 10 was approximately 5 x 10-' Torr.
尚、本発明は前記実施例に限定されるものではなく、本
発明の要旨の範囲内で種々の変形実施が可能である。Note that the present invention is not limited to the above-mentioned embodiments, and various modifications can be made within the scope of the gist of the present invention.
マニホールドに設けた複数の溝部を蓋体に設けても良い
ことはもちろんであり、その化シール両面に設けても良
い、また蓋体の材質を金属以外の石英やＳｉＣ等の非金
属としても良いことはもちろんである。Of course, the plurality of grooves provided in the manifold may be provided on the lid body, and the seals may be provided on both sides, and the material of the lid body may be non-metallic such as quartz or SiC. Of course.
前記実施例では減圧熱処理装置について説明を行ったが
拡散炉や常圧ＣＶＤ装置等の熱処理装置やその他バッチ
処理装置に応用しても良く、縦型装置に限らず横型装置
に応用できるのは当然のことである。In the above embodiments, a reduced pressure heat treatment apparatus was explained, but the present invention may also be applied to heat treatment apparatuses such as diffusion furnaces and atmospheric CVD apparatuses, and other batch processing apparatuses, and of course can be applied not only to vertical apparatuses but also to horizontal apparatuses. It is about.
さらに熱処理装置に限らず、封止機構であればエツチン
グ装置やイオン装置等信れにも適用できる。Furthermore, the present invention is not limited to heat treatment equipment, but can also be applied to etching equipment, ion equipment, etc. as long as it is a sealing mechanism.
以上説明したように、本発明によれば０リング等が使用
できない高温に耐えるシール部を形成することができ、
容器内に不用な大気中の成分が混入せず、もって所望の
処理を被処理体に施こすことが可能になるという顕著な
効果がある。As explained above, according to the present invention, it is possible to form a seal portion that can withstand high temperatures where O-rings and the like cannot be used.
This has the remarkable effect that unnecessary atmospheric components are not mixed into the container, thereby making it possible to perform the desired treatment on the object to be treated.
第１図は本発明に係る縦型熱処理装置の一実施例説明図
、第２図は第１図の部分説明図、第３図は第２図の他の
実施例説明図、第４図は第１図の他の実施例説明図であ
る。
１０・・・プロセスチューブ １６・・・ヒータ１７・
・・ボート １８・・・ウェハ２０・・・マ
ニホールド ２２・・・開口端部３０、３２．３４
・・・溝部 ３１．３３・・・排気管３５・・・導
入管 ３６〜３９・・・下端部４０・・・蓋
体 ４２・・・外周面５０・・・昇降機構
第
図
第
図
第
３
図
第
図FIG. 1 is an explanatory diagram of one embodiment of the vertical heat treatment apparatus according to the present invention, FIG. 2 is a partial explanatory diagram of FIG. 1, FIG. 3 is an explanatory diagram of another embodiment of FIG. 2, and FIG. FIG. 2 is an explanatory diagram of another embodiment of FIG. 1; 10... Process tube 16... Heater 17.
...Boat 18...Wafer 20...Manifold 22...Open end 30, 32.34
...Groove portion 31.33...Exhaust pipe 35...Introduction pipe 36-39...Lower end portion 40...Lid body 42...Outer peripheral surface 50...Elevating mechanism Figure 3 Figure diagram
Claims (1)
て、上記容器のシール対向部の少なくとも一方の面に複
数の溝部を設け、この溝部の少なくとも一つの溝は真空
に排気し、この真空に排気した外側の溝は予め定められ
たガス流もしくは一定圧のガス流を設けたことを特徴と
する封止装置。In a container sealing device in which the inside of the container is evacuated to a predetermined pressure, a plurality of grooves are provided on at least one surface of the seal facing portion of the container, at least one of the grooves is evacuated to a vacuum, and the container is evacuated to a predetermined pressure. A sealing device characterized in that the outer groove for exhausting air is provided with a predetermined gas flow or a constant pressure gas flow.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2045211A JP2733532B2 (en) | 1990-02-26 | 1990-02-26 | Heat treatment equipment |
| US07/661,109 US5133561A (en) | 1990-02-26 | 1991-02-26 | Sealing device |
| KR1019910003099A KR0171600B1 (en) | 1990-02-26 | 1991-02-26 | Sealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2045211A JP2733532B2 (en) | 1990-02-26 | 1990-02-26 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03249936A true JPH03249936A (en) | 1991-11-07 |
| JP2733532B2 JP2733532B2 (en) | 1998-03-30 |
Family
ID=12712935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2045211A Expired - Fee Related JP2733532B2 (en) | 1990-02-26 | 1990-02-26 | Heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2733532B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0492636U (en) * | 1990-12-28 | 1992-08-12 | ||
| US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| EP1082470A1 (en) * | 1998-05-05 | 2001-03-14 | Ultratech Stepper Inc. | Microchamber |
| US6475286B1 (en) * | 1999-07-13 | 2002-11-05 | Aixtron Aktiengesellschaft | Seal means for separable closing elements, such as separable elements of chemical vapor deposition chamber and deposition reactor apparatus |
| US20090297725A1 (en) * | 2005-07-21 | 2009-12-03 | Ray William Reynoldson | Duplex Surface Treatment of Metal Objects |
| JP2017183557A (en) * | 2016-03-31 | 2017-10-05 | 光洋サーモシステム株式会社 | Thermal treatment apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011080876A1 (en) * | 2009-12-28 | 2011-07-07 | パナソニック株式会社 | Plasma doping apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57108145A (en) * | 1980-12-25 | 1982-07-06 | Marubishi Yuka Kogyo Kk | Rigid polyvinyl chloride resin composition |
| JPH01169174A (en) * | 1987-12-22 | 1989-07-04 | Daido Steel Co Ltd | Method for fixing cover to vessel |
-
1990
- 1990-02-26 JP JP2045211A patent/JP2733532B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57108145A (en) * | 1980-12-25 | 1982-07-06 | Marubishi Yuka Kogyo Kk | Rigid polyvinyl chloride resin composition |
| JPH01169174A (en) * | 1987-12-22 | 1989-07-04 | Daido Steel Co Ltd | Method for fixing cover to vessel |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0492636U (en) * | 1990-12-28 | 1992-08-12 | ||
| US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| EP1082470A1 (en) * | 1998-05-05 | 2001-03-14 | Ultratech Stepper Inc. | Microchamber |
| EP1082470A4 (en) * | 1998-05-05 | 2003-02-05 | Ultratech Stepper Inc | Microchamber |
| US6475286B1 (en) * | 1999-07-13 | 2002-11-05 | Aixtron Aktiengesellschaft | Seal means for separable closing elements, such as separable elements of chemical vapor deposition chamber and deposition reactor apparatus |
| JP2003504884A (en) * | 1999-07-13 | 2003-02-04 | アイクストロン、アーゲー | Sealing means in welding reactor and its application |
| US20090297725A1 (en) * | 2005-07-21 | 2009-12-03 | Ray William Reynoldson | Duplex Surface Treatment of Metal Objects |
| US8317926B2 (en) * | 2005-07-21 | 2012-11-27 | Hard Technologies Pty Ltd. | Duplex surface treatment of metal objects |
| JP2017183557A (en) * | 2016-03-31 | 2017-10-05 | 光洋サーモシステム株式会社 | Thermal treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2733532B2 (en) | 1998-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5368648A (en) | Sealing apparatus | |
| US5520743A (en) | Processing apparatus with means for rotating an object mounting means and a disk body located in the mounting means differently relative to each other | |
| US5578132A (en) | Apparatus for heat treating semiconductors at normal pressure and low pressure | |
| US5884917A (en) | Thermal processing apparatus | |
| JP2000068259A (en) | Heat treatment apparatus | |
| JPH02174225A (en) | Treatment device | |
| JPH03249936A (en) | Sealing device | |
| JP2011040636A (en) | Gas port structure and processing apparatus | |
| JP3122883B2 (en) | Vapor phase growth equipment | |
| JP3140096B2 (en) | Heat treatment equipment | |
| JP2683579B2 (en) | Processing equipment | |
| JP2002009010A (en) | Thermal treatment and method | |
| JP2849772B2 (en) | Sealing device and sealing method | |
| JP2700939B2 (en) | Sealing device | |
| JPS6224630A (en) | Formation of thermal oxidation film and device therefor | |
| JP4404666B2 (en) | Substrate support, substrate processing apparatus, and semiconductor device manufacturing method | |
| US6720274B2 (en) | Method for fabricating a semiconductor device and a substrate processing apparatus | |
| JP3055797B2 (en) | Vertical heat treatment equipment | |
| JP3473263B2 (en) | Low pressure CVD equipment | |
| JPH0729841A (en) | Heat treatment furnace | |
| JPH07142418A (en) | Vertical furnace for semiconductor production system | |
| JPH0286120A (en) | Treatment | |
| JP3269881B2 (en) | Semiconductor manufacturing equipment | |
| JP7194805B2 (en) | Gas supply unit, substrate processing apparatus, and semiconductor device manufacturing method | |
| JP2009016532A (en) | Substrate treatment equipment and manufacturing method for semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |