CN102747425A - Horizontal type silicon carbide high-temperature oxidation device - Google Patents
Horizontal type silicon carbide high-temperature oxidation device Download PDFInfo
- Publication number
- CN102747425A CN102747425A CN2012102263341A CN201210226334A CN102747425A CN 102747425 A CN102747425 A CN 102747425A CN 2012102263341 A CN2012102263341 A CN 2012102263341A CN 201210226334 A CN201210226334 A CN 201210226334A CN 102747425 A CN102747425 A CN 102747425A
- Authority
- CN
- China
- Prior art keywords
- silica tube
- ring flange
- horizontal
- temperature oxidation
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003647 oxidation Effects 0.000 title claims abstract description 34
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 26
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 193
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 238000007789 sealing Methods 0.000 claims abstract description 15
- 239000011148 porous material Substances 0.000 claims abstract description 12
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 91
- 238000009434 installation Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 238000004321 preservation Methods 0.000 claims description 11
- 230000006698 induction Effects 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 abstract 11
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 238000011065 in-situ storage Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210226334.1A CN102747425B (en) | 2012-07-02 | 2012-07-02 | Horizontal type silicon carbide high-temperature oxidation device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210226334.1A CN102747425B (en) | 2012-07-02 | 2012-07-02 | Horizontal type silicon carbide high-temperature oxidation device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102747425A true CN102747425A (en) | 2012-10-24 |
CN102747425B CN102747425B (en) | 2015-01-21 |
Family
ID=47027900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210226334.1A Active CN102747425B (en) | 2012-07-02 | 2012-07-02 | Horizontal type silicon carbide high-temperature oxidation device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102747425B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103628140A (en) * | 2013-10-09 | 2014-03-12 | 东莞市天域半导体科技有限公司 | Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber |
CN104357666A (en) * | 2014-11-28 | 2015-02-18 | 易德福 | Method for recovering gallium from gallium nitride and device using method |
CN110736346A (en) * | 2019-10-24 | 2020-01-31 | 江苏能华微电子科技发展有限公司 | diffusion furnace structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1544713A (en) * | 2003-11-14 | 2004-11-10 | 中国科学院物理研究所 | Silicon carbide crystal growth apparatus |
CN2730890Y (en) * | 2004-09-22 | 2005-10-05 | 中国科学院半导体研究所 | Horizontal ion implantation silicon carbide high-temp. annealing device |
CN2743375Y (en) * | 2004-09-22 | 2005-11-30 | 中国科学院半导体研究所 | Vertical ion injection silicone carbide high temperature annealing device |
CN202671720U (en) * | 2012-07-02 | 2013-01-16 | 东莞市天域半导体科技有限公司 | Horizontal silicon carbide high-temperature oxidation device |
-
2012
- 2012-07-02 CN CN201210226334.1A patent/CN102747425B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1544713A (en) * | 2003-11-14 | 2004-11-10 | 中国科学院物理研究所 | Silicon carbide crystal growth apparatus |
CN2730890Y (en) * | 2004-09-22 | 2005-10-05 | 中国科学院半导体研究所 | Horizontal ion implantation silicon carbide high-temp. annealing device |
CN2743375Y (en) * | 2004-09-22 | 2005-11-30 | 中国科学院半导体研究所 | Vertical ion injection silicone carbide high temperature annealing device |
CN202671720U (en) * | 2012-07-02 | 2013-01-16 | 东莞市天域半导体科技有限公司 | Horizontal silicon carbide high-temperature oxidation device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103628140A (en) * | 2013-10-09 | 2014-03-12 | 东莞市天域半导体科技有限公司 | Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber |
CN103628140B (en) * | 2013-10-09 | 2016-08-17 | 东莞市天域半导体科技有限公司 | A kind of superhigh temperature Double water-cooled quartz tube vacuum chamber double sealing structure |
CN104357666A (en) * | 2014-11-28 | 2015-02-18 | 易德福 | Method for recovering gallium from gallium nitride and device using method |
CN110736346A (en) * | 2019-10-24 | 2020-01-31 | 江苏能华微电子科技发展有限公司 | diffusion furnace structure |
Also Published As
Publication number | Publication date |
---|---|
CN102747425B (en) | 2015-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102691109A (en) | Vertical silicon carbide high-temperature oxidation device | |
KR102151001B1 (en) | High temperature electrostatic chuck with real-time heat zone regulating capability | |
WO2020015523A1 (en) | Process chamber and heat treatment furnace | |
CN103628140B (en) | A kind of superhigh temperature Double water-cooled quartz tube vacuum chamber double sealing structure | |
CN105659366A (en) | Low temperature silicon nitride films using remote plasma CVD technology | |
CN102747425A (en) | Horizontal type silicon carbide high-temperature oxidation device | |
CN109983566A (en) | There is concentric or helical duct two-region flowing coldplate design for the cooling of efficient gas distribution assembly | |
CN101809717A (en) | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses | |
TW200900539A (en) | Processing chamber with heated chamber liner | |
CN202671720U (en) | Horizontal silicon carbide high-temperature oxidation device | |
CN104233460B (en) | Reaction chamber and MOCVD equipment provided with reaction chamber | |
CN202671719U (en) | Vertical high-temperature oxidation device for silicon carbide | |
WO2023231927A1 (en) | Electrode device, heater power supply structure, and furnace bottom structure of single crystal furnace | |
CN203583011U (en) | Dual-seal structure for ultrahigh-temperature double-layer water-cooled quartz tube vacuum chamber | |
CN105964200A (en) | Kettle door sealing and cooling device | |
JP2021534071A (en) | Chamber seal assembly and growth furnace | |
CN206260096U (en) | Energy-saving electrical radiant tube heater | |
CN109958381A (en) | A kind of door for vacuum chamber sealing structure and vacuum chamber | |
CN213273694U (en) | Ceramic forming and drying device | |
CN206438176U (en) | A kind of vacuum chamber high temperature CVD heating coil structures | |
CN106498370A (en) | A kind of vacuum chamber high temperature CVD heating coil structures | |
WO2020052432A1 (en) | Electrostatic chuck | |
CN109341343A (en) | A kind of high-temperature heating furnace body suitable for manufacturing silicon carbide semiconductor | |
CN219363874U (en) | Vertical silicon carbide high-temperature annealing furnace device | |
CN207338295U (en) | A kind of top electrode assembly |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Horizontal type silicon carbide high-temperature oxidation device Effective date of registration: 20190715 Granted publication date: 20150121 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: 2019440000263 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee after: Guangdong Tianyu Semiconductor Co.,Ltd. Address before: No. 5, Gongye North 1st Road, Songshan, Hubei, Dongguan, Guangdong 523000 Patentee before: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230406 Granted publication date: 20150121 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: 2019440000263 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A Horizontal Silicon Carbide High Temperature Oxidation Device Effective date of registration: 20230512 Granted publication date: 20150121 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: Guangdong Tianyu Semiconductor Co.,Ltd. Registration number: Y2023980040499 |